CN104465629B - Passive device structure and forming method thereof - Google Patents
Passive device structure and forming method thereof Download PDFInfo
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- CN104465629B CN104465629B CN201310438676.4A CN201310438676A CN104465629B CN 104465629 B CN104465629 B CN 104465629B CN 201310438676 A CN201310438676 A CN 201310438676A CN 104465629 B CN104465629 B CN 104465629B
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Abstract
The present invention proposes a kind of passive device structure and forming method thereof; charge adsorption layer is formed with the surface of capacitance structure; the charge adsorption layer is close to connecting line; charge adsorption layer being capable of adsorption charge; when subsequent technique is carried out, the electric charge of generation can be derived electric charge by charge adsorption layer, it is to avoid charge accumulation is in the capacitance structure; so as to protect capacitance structure not to be damaged, and then the performance of passive device can be improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of passive device structure and forming method thereof.
Background technology
In the art of semiconductor manufacturing, in order to improve integrated level, generally by multiple passive device integrations in same structure,
Constitute passive device structure.The passive device structure generally includes resistance, inductance and electric capacity etc..
Fig. 1 is refer to, Fig. 1 is the generalized section of passive device structure in the prior art, the passive device structure bag
Include：Preceding Rotating fields 10, the first metal layer 22, second metal layer 50, capacitance structure, connecting line 30, interlayer dielectric layer 40 and blunt
Change layer 60, wherein, the first metal layer 22 is formed at the surface of the preceding Rotating fields 10, in order to preferably with the front layer 10 and after
The continuous connecting line for being formed has preferably contact, and the upper and lower surface of the first metal layer 22 is each formed with barrier layer 21；The electricity
Holding structure includes bottom crown 23, top crown 25 and dielectric layer 24, and the dielectric layer 24 is formed at the top crown 25 and lower pole
Between plate 23；Likewise, preferably contacted in order to bottom crown 23 has with the front layer 10 and the connecting line being subsequently formed, it is described under
The lower surface of pole plate 23 and upper surface are each formed with barrier layer 21；That is the dielectric layer 24 is formed at the barrier layer 21
Surface；The top crown 25 is formed directly into the surface of the dielectric layer 24, in order that top crown 25 can be subsequently formed
Connecting line have preferably contact, therefore be formed with barrier layer 21 in the upper surface of the top crown 25；The top crown 25,
The surface barrier 21 of bottom crown 23 and the first metal layer 22 has been respectively formed on connecting line 30；The same connecting line 30
Two side is also formed with barrier layer 21；Second metal layer 50 is formed with the upper surface of connecting line 30, likewise, second gold medal
The upper and lower surface for belonging to layer 50 is each formed with barrier layer 21；The interlayer dielectric layer 40 is formed at the capacitance structure, the first metal
Layer 22, between connecting line 30 and second metal layer 50, play a part of isolate different components；The interlayer dielectric layer 40 is surrounded
The second metal layer 50, subsequently forms passivation layer 60 on the surface of the interlayer dielectric layer 40, plays the whole passive device of protection
The effect of structure.
Wherein, the interlayer dielectric layer 40 uses high density plasma enhanced chemical vapor deposition technique, forms connecting line
30 need to use etching technics, it is well known that above-mentioned technique can produce the substantial amounts of electric charge, electric charge can be passed via connecting line 30
Top crown 25 and the surface of bottom crown 23 of the capacitance structure are directed at, therefore very easily form plasma-based introducing property infringement
(Plasma Induce Defect, PID), when substantial amounts of charge concentration is on capacitance structure top crown 25 and the surface of bottom crown 23,
Plus the dielectric layer 24 thickness be generally 330 angstroms it is relatively thin, so just extremely easily cause the dielectric layer 24 and burn so that
Capacitance structure can be damaged, whole passive device structure is damaged.
The content of the invention
It is an object of the invention to provide a kind of passive device structure and forming method thereof, capacitance structure can be avoided from suffering
Plasma-based introducing property infringement.
To achieve these goals, the present invention proposes a kind of passive device structure, including：
Front layer, capacitance structure, connecting line and interlayer dielectric layer；Wherein, the capacitance structure is formed at the front layer
Surface, the capacitance structure surface is formed with charge adsorption layer, and the connecting line is electrically connected with the capacitance structure, the electric charge
Adsorption layer is close to the side wall of the connecting line, interlayer dielectric layer be formed at the front layer and charge adsorption layer surface, and every
From the connecting line.
Further, in described passive device structure, the capacitance structure includes bottom crown, top crown and medium
Layer, the dielectric layer is formed between the top crown and bottom crown, the connecting line respectively with the bottom crown and top crown
Electrical connection.
Further, in described passive device structure, the material of the dielectric layer is silicon nitride or silica.
Further, in described passive device structure, the material of the top crown, bottom crown and connecting line is
Aluminium.
Further, in described passive device structure, the passive device structure also includes the first metal dish, nitrogen oxygen
SiClx layer, the second metal dish and passivation layer；Wherein, first metal dish is formed at the surface of the front layer, the connection
Line is electrically connected with first metal dish, and first metal dish is kept apart with the capacitance structure by interlayer dielectric layer, described
Silicon oxynitride layer is formed at the surface of the charge adsorption layer, and second metal dish is formed at the surface of the connecting line, institute
State and kept apart by the interlayer dielectric layer between the second metal dish, the passivation layer is formed at the surface of the interlayer dielectric layer.
Further, in described passive device structure, the material of first metal dish and the second metal dish is equal
It is aluminium.
Further, in described passive device structure, the scope of the extinction coefficient of the silicon oxynitride layer is 0.55
~0.75.
Further, in described passive device structure, the material of the passivation layer is silicon oxynitride and silicon nitride
Mixture.
Further, in described passive device structure, the bottom crown, top crown, the first metal dish and the second gold medal
The surface that category disk is connected with the connecting line is each formed with barrier layer, the bottom crown and the first metal dish and the front layer phase
The surface of connection is formed with barrier layer, and the two side of the connecting line is each formed with barrier layer.
Further, in described passive device structure, the material of the barrier layer is the mixture of Ti and TiN.
Further, in described passive device structure, the surface of first metal dish is formed with charge adsorption layer
And silicon oxynitride layer, the charge adsorption layer and silicon oxynitride layer are close to the side wall of the connecting line.
Further, in described passive device structure, the material of the charge adsorption layer is silicon-rich silicon oxy-nitride.
Further, in described passive device structure, the thickness range of the charge adsorption layer is 300 angstroms~700
Angstrom.
Further, in described passive device structure, the scope of the extinction coefficient of charge adsorption layer for 1.4~
1.8。
Further, the present invention also proposes a kind of forming method of passive device structure, for being formed as described above
Any one passive device structure, methods described includes step：
Front layer is provided；
Bottom crown layer, dielectric layer and top crown layer are sequentially formed in the front layer surface；
Etched portions top crown layer, forms top crown, and etching stopping is in dielectric layer；
Charge adsorption layer is formed on the surface of the top crown and dielectric layer；
Charge adsorption layer, dielectric layer and bottom crown layer are sequentially etched, part front layer is exposed, and form bottom crown and the
One metal dish；
The first interlayer dielectric layer is formed on the surface of charge adsorption layer and front layer；
Etch first interlayer dielectric layer, form connection string holes, the connection string holes expose successively part top crown,
Bottom crown and the first metal dish；
Connecting line is formed in the connection string holes.
Further, in the forming method of described passive device structure, after connecting line is formed, in the connection
The surface of line forms the second metal dish.
Further, in the forming method of described passive device structure, after the second metal dish is formed, described
Second metallic disc surface and the first interlayer dielectric layer surface form the second interlayer dielectric layer.
Further, in the forming method of described passive device structure, after the second interlayer dielectric layer is formed,
The surface of second interlayer dielectric layer forms passivation layer.
Further, in the forming method of described passive device structure, respectively in the bottom crown, top crown,
The surface that one metal dish, the second metal dish are connected with the connecting line forms barrier layer, in the bottom crown, the first metal dish
The surface being connected with the front layer forms barrier layer, and barrier layer is formed in the two side of the connecting line.
Further, in the forming method of described passive device structure, etching charge adsorption layer, dielectric layer and
Before bottom crown layer, silicon oxynitride layer is formed on the surface of charge adsorption layer.
Compared with prior art, the beneficial effects are mainly as follows being formed with electric charge on the surface of capacitance structure
Adsorption layer, charge adsorption layer is close to connecting line, the charge adsorption layer can adsorption charge, when subsequent technique is carried out,
The electric charge of generation can be derived electric charge by charge adsorption layer, it is to avoid charge accumulation is in the capacitance structure such that it is able to
Protect capacitance structure not to be damaged, and then the performance of passive device can be improved.
Brief description of the drawings
Fig. 1 is the generalized section of passive device structure in the prior art；
Fig. 2 is the flow chart of passive device structure forming method in one embodiment of the invention；
Fig. 3~Fig. 9 is the structural profile schematic diagram during formation passive device structure in one embodiment of the invention.
Specific embodiment
Passive device structure of the invention and forming method thereof is described in more detail below in conjunction with schematic diagram, its
In illustrate the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change invention described herein, and
Still advantageous effects of the invention are realized.Therefore, description below is appreciated that knowing extensively for those skilled in the art
Road, and it is not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, it is not described in detail known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to relevant system or relevant business
Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expends
Time, but it is only to those skilled in the art routine work.
The present invention is more specifically described by way of example referring to the drawings in the following passage.Will according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is in the form of simplifying very much and using non-
Accurately ratio, is only used to conveniently, lucidly aid in illustrating the purpose of the embodiment of the present invention.
Fig. 8 is refer to, in the present embodiment, a kind of passive device structure is proposed, including：Front layer 100, capacitance structure, company
Wiring 500, interlayer dielectric layer, the first metal dish 221, the second metal dish 600 and passivation layer 700；
Wherein, the capacitance structure is formed at the surface of the front layer 100, the capacitance structure include bottom crown 222, on
Pole plate 241 and dielectric layer 230, the dielectric layer 230 are formed between the top crown 241 and bottom crown 222, the connection
Line 500 is electrically connected with the bottom crown 222 and top crown 241 respectively, wherein, the material of the dielectric layer 230 for silicon nitride or
Person is silica, and the material of the top crown 241, bottom crown 222 and connecting line 500 is aluminium.
Charge adsorption layer 300, the connecting line 500 and capacitance structure electricity are formed with the surface of the capacitance structure
Connection, the charge adsorption layer 300 is close to the side wall of the connecting line 500, the electric charge for turning on subsequent technique generation, its
In, the material of charge adsorption layer 300 is silicon-rich silicon oxy-nitride, its thickness range is 300 angstroms~700 angstroms, e.g. 500
Angstrom, the scope of the extinction coefficient of the charge adsorption layer 300 is 1.4~1.8, e.g. 1.6, after charge adsorption layer is not influenceed
Continuous exposure technology；Interlayer dielectric layer is formed at the surface of the front layer 100 and charge adsorption layer 300, and isolates the connection
Line 500；Preferably, silicon oxynitride layer 310 can be formed on 300 surface of charge adsorption layer, so that exposure technology is easier
Realize, the scope of the extinction coefficient of the silicon oxynitride layer 310 is 0.55~0.75, e.g. 0.65.
In the present embodiment, first metal dish 221 is formed at the surface of the front layer 100, the connecting line 500 with
First metal dish 221 is electrically connected, and first metal dish 221 is kept apart with the capacitance structure by interlayer dielectric layer, institute
The surface for stating the first metal dish 221 is formed with charge adsorption layer 300 and silicon oxynitride layer 310, the charge adsorption layer 300 and nitrogen
Silicon oxide layer 310 is close to the side wall of the connecting line 500, and the silicon oxynitride layer 310 is formed at the charge adsorption layer 300
Surface, second metal dish 600 is formed at the surface of the connecting line 500, by described between second metal dish 600
Interlayer dielectric layer is kept apart, and the passivation layer 700 is formed at the surface of the interlayer dielectric layer；Wherein, first metal dish
221 and second the material of metal dish 222 be aluminium；The material of the passivation layer 700 is the mixing of silicon oxynitride and silicon nitride
Thing.
In the present embodiment, the bottom crown 222, top crown 241, the first metal dish 221 and the second metal dish 600 and institute
State the surface that connecting line 500 is connected and be each formed with barrier layer 210, the metal dish 221 of the bottom crown 222 and first with it is described before
The surface that layer 100 is connected is formed with barrier layer 210, and the two side of the connecting line 500 is each formed with barrier layer 210, wherein,
The material of the barrier layer 210 is the mixture of Ti and TiN.
In the present embodiment, it is also proposed that a kind of forming method of passive device structure, for forming passive device above
Part structure, refer to Fig. 2, and methods described includes step：
Front layer 100 is provided；
Bottom crown layer 220, dielectric layer 230 and top crown layer 240 are sequentially formed on the surface of the front layer 100, wherein,
Before forming bottom crown layer 220, barrier layer 210 is formed on the surface of the front layer 100, before dielectric layer 230 is formed, in institute
The surface for stating bottom crown layer 220 forms barrier layer 210, before charge adsorption layer is formed, on the surface of top crown layer 240
Barrier layer 210 is formed, as shown in Figure 3；
Etched portions top crown layer 240, formed top crown 241, etching stopping in the surface of dielectric layer 230, such as Fig. 4 institutes
Show；
Charge adsorption layer 300 and silicon oxynitride layer are sequentially formed on the surface of the top crown 241 and dielectric layer 230
310, as shown in Figure 5；
It is sequentially etched silicon oxynitride layer 310, charge adsorption layer 300, barrier layer 210, dielectric layer 230 and bottom crown layer
220, the surface of part front layer 100 is exposed, and the metal dish 221 of bottom crown 222 and first is formed, as shown in Figure 6；
The first interlayer dielectric layer 410 is formed on the surface of the silicon oxynitride layer 310 and front layer 100；
First interlayer dielectric layer 410 is etched, connection string holes is formed, the connection string holes exposes the upper pole in part successively
The surface of plate 241, the barrier layer 210 of the metal dish 221 of bottom crown 222 and first；
Connecting line 500 is formed in the connection string holes, as shown in Figure 7；
After connecting line 500 is formed, the second metal dish 600 is formed on the surface of the connecting line 500, as shown in Figure 8；
After the second metal dish 600 is formed, in the surface of second metal dish 600 and the first interlayer dielectric layer
410 surface forms the second interlayer dielectric layer 420 and passivation layer 700 successively, as shown in Figure 9；Second interlayer dielectric layer 420
For isolating second metal dish 600；First interlayer dielectric layer 410 and the second interlayer dielectric layer 420 are situated between collectively as interlayer
Matter layer；The passivation layer 700 is used to protect passive device structure.
The preferred embodiments of the present invention are above are only, any restriction effect is not played to the present invention.Belonging to any
Those skilled in the art, not departing from the range of technical scheme, to the invention discloses technical scheme and
Technology contents make the variation such as any type of equivalent or modification, belong to the content without departing from technical scheme, still
Belong within protection scope of the present invention.
Claims (20)
1. a kind of passive device structure, including：
Front layer, capacitance structure, connecting line and interlayer dielectric layer；Wherein, the capacitance structure is formed at the surface of the front layer,
The capacitance structure surface is formed with charge adsorption layer, and the connecting line is electrically connected with the capacitance structure, the charge adsorption
Layer is close to the side wall of the connecting line, and interlayer dielectric layer is formed at the surface of the front layer and charge adsorption layer, and isolates institute
State connecting line.
2. passive device structure as claimed in claim 1, it is characterised in that the capacitance structure includes bottom crown, top crown
And dielectric layer, the dielectric layer is formed between the top crown and bottom crown, the connecting line respectively with the bottom crown
Electrically connected with top crown.
3. passive device structure as claimed in claim 2, it is characterised in that the material of the dielectric layer is silicon nitride or oxygen
SiClx.
4. passive device structure as claimed in claim 2, it is characterised in that the top crown, bottom crown and connecting line
Material is aluminium.
5. passive device structure as claimed in claim 2, it is characterised in that the passive device structure also includes the first metal
Disk, silicon oxynitride layer, the second metal dish and passivation layer；Wherein, first metal dish is formed at the surface of the front layer, institute
State connecting line to be electrically connected with first metal dish, first metal dish is isolated with the capacitance structure by interlayer dielectric layer
Open, the silicon oxynitride layer is formed at the surface of the charge adsorption layer, second metal dish is formed at the connecting line
Surface, is kept apart between second metal dish by the interlayer dielectric layer, and the passivation layer is formed at the interlayer dielectric layer
Surface.
6. passive device structure as claimed in claim 5, it is characterised in that first metal dish and the second metal dish
Material is aluminium.
7. passive device structure as claimed in claim 6, it is characterised in that the scope of the extinction coefficient of the silicon oxynitride layer
It is 0.55~0.75.
8. passive device structure as claimed in claim 5, it is characterised in that the material of the passivation layer is silicon oxynitride and nitrogen
The mixture of SiClx.
9. passive device structure as claimed in claim 5, it is characterised in that the bottom crown, top crown, the first metal dish and
The surface that second metal dish is connected with the connecting line is each formed with barrier layer, the bottom crown and the first metal dish with it is described
The surface that front layer is connected is formed with barrier layer, and the two side of the connecting line is each formed with barrier layer.
10. passive device structure as claimed in claim 9, it is characterised in that the material of the barrier layer is mixed for Ti's and TiN
Compound.
11. passive device structures as claimed in claim 5, it is characterised in that the surface of first metal dish is formed with electricity
Lotus adsorption layer and silicon oxynitride layer, the charge adsorption layer and silicon oxynitride layer are close to the side wall of the connecting line.
12. passive device structures as claimed in claim 1, it is characterised in that the material of the charge adsorption layer is Silicon-rich nitrogen
Silica.
13. passive device structures as claimed in claim 12, it is characterised in that the thickness range of charge adsorption layer is
300 angstroms~700 angstroms.
14. passive device structures as claimed in claim 12, it is characterised in that the model of the extinction coefficient of the charge adsorption layer
Enclose is 1.4~1.8.
15. a kind of forming methods of passive device structure, for being formed such as any one passive device knot in claim 1 to 14
Structure, methods described includes step：
Front layer is provided；
Bottom crown layer, dielectric layer and top crown layer are sequentially formed in the front layer surface；
Etched portions top crown layer, forms top crown, and etching stopping is in dielectric layer；
Charge adsorption layer is formed on the surface of the top crown and dielectric layer；
Charge adsorption layer, dielectric layer and bottom crown layer are sequentially etched, part front layer is exposed, and form bottom crown and the first gold medal
Category disk；
The first interlayer dielectric layer is formed on the surface of charge adsorption layer and front layer；
First interlayer dielectric layer is etched, connection string holes is formed, the connection string holes exposes part top crown, lower pole successively
Plate and the first metal dish；
Connecting line is formed in the connection string holes.
The forming method of 16. passive device structures as claimed in claim 15, it is characterised in that after connecting line is formed,
The second metal dish is formed on the surface of the connecting line.
The forming method of 17. passive device structures as claimed in claim 16, it is characterised in that formed the second metal dish it
Afterwards, the second interlayer dielectric layer is formed in second metallic disc surface and the first interlayer dielectric layer surface.
The forming method of 18. passive device structures as claimed in claim 16, it is characterised in that forming the second inter-level dielectric
After layer, passivation layer is formed on the surface of second interlayer dielectric layer.
The forming method of 19. passive device structures as claimed in claim 15, it is characterised in that respectively the bottom crown,
Surface that top crown, the first metal dish, the second metal dish are connected with the connecting line forms barrier layer, the bottom crown,
The surface that first metal dish is connected with the front layer forms barrier layer, and barrier layer is formed in the two side of the connecting line.
The forming method of 20. passive device structures as claimed in claim 15, it is characterised in that etching charge adsorption layer,
Before dielectric layer and bottom crown layer, silicon oxynitride layer is formed on the surface of charge adsorption layer.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4481283A (en) * | 1982-04-30 | 1984-11-06 | U.S. Philips Corporation | Method of manufacturing an integrated capacitor and device obtained by this method |
| CN101777518A (en) * | 2009-01-13 | 2010-07-14 | 中芯国际集成电路制造(上海)有限公司 | Method for improving integral parameter of gate oxide layer |
| CN101789429A (en) * | 2009-01-23 | 2010-07-28 | 中芯国际集成电路制造(上海)有限公司 | Metal-insulator-metal capacitor structure and manufacturing method thereof |
-
2013
- 2013-09-23 CN CN201310438676.4A patent/CN104465629B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4481283A (en) * | 1982-04-30 | 1984-11-06 | U.S. Philips Corporation | Method of manufacturing an integrated capacitor and device obtained by this method |
| CN101777518A (en) * | 2009-01-13 | 2010-07-14 | 中芯国际集成电路制造(上海)有限公司 | Method for improving integral parameter of gate oxide layer |
| CN101789429A (en) * | 2009-01-23 | 2010-07-28 | 中芯国际集成电路制造(上海)有限公司 | Metal-insulator-metal capacitor structure and manufacturing method thereof |
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