CN104516104A - Formation method of digital micro display - Google Patents
Formation method of digital micro display Download PDFInfo
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- CN104516104A CN104516104A CN201310464324.6A CN201310464324A CN104516104A CN 104516104 A CN104516104 A CN 104516104A CN 201310464324 A CN201310464324 A CN 201310464324A CN 104516104 A CN104516104 A CN 104516104A
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Abstract
Disclosed is a formation method of a digital micro display. The method includes: providing a substrate with a micro display control circuit formed thereon; forming a first sacrificial layer on the substrate; forming a conducting material layer, a dielectric material layer on the conducting material layer and a pattern photoresist layer located on the dielectric material layer on the first sacrificial layer; by taking the pattern photoresist layer as a mask, performing dry etching on the dielectric material layer and the conducting material layer so as to form a hinge; after the hinge is formed, removing part of the pattern photoresist layer by means of wet etching; performing anisotropic dry etching on the rest part of the pattern photoresist layer. The whole pattern photoresist layer is removed cleanly, meanwhile the first sacrificial layer under the hinge cannot be corroded so as to avoid collapse of the hinge, the dielectric layer of the hinge is protected against etching, and the plasma damage to the substrate is reduced as well.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of formation method of Digital Micromirror Device.
Background technology
Digital Micromirror Device (Digital Micro Display, be called for short DMD) is a kind of flat-panel display device of novel total digitalization, it by array of reflective micro-mirrors and CMOS SRAM on the same chip integrated.Because reflective micro-mirrors occupies the overwhelming majority display area of Digital Micromirror Device unit, the system of high brightness and high picture element therefore can be produced.
Fig. 1 is the spatial structure exploded view of existing a kind of Digital Micromirror Device, and as shown in Figure 1, Digital Micromirror Device comprises: substrate 1, substrate 1 is formed with micro mirror element control circuit; Be positioned at the digital micromirror array in substrate 1, each digital micro-mirror in described digital micromirror array comprises: be supported on the hinge (hinge) 2 above substrate 1 by two the first support columns 3, two the first support columns 3 lay respectively at the two ends of hinge 2, and hinge 2 is electrically connected with control circuit by the first conductive plunger (not shown); Two fixed electordes 4 laying respectively at hinge 2 both sides, fixed electorde 4 to be supported on above substrate 1 by the second support column 5 and to be electrically connected with control circuit by the second conductive plunger (not shown); Be positioned at the catoptron 6 above hinge 2, catoptron 6 is electrically connected with hinge 2 by the 3rd conductive plunger 7.
The principle of work of Digital Micromirror Device is as follows: when applying electrically contrary voltage between any one fixed electorde 4 with catoptron 6, catoptron 6 is subject to the attraction of fixed electorde 4, can rotate predetermined angular (as ± 12 °) around hinge 2; Under the effect of the torsional return of hinge 2, equilibrium position is returned at dead electricity back mirror 6, thus, according to the difference of catoptron 6 position, the shooting angle of reflected light is just not identical, therefore each catoptron is equivalent to a photoswitch, when photoswitch process " ON state ", reflected light just can be thrown on screen by projecting lens, and on state of appears in screen; When photoswitch is in " OFF state ", reflected light cannot control bright dark position as required, thus realizes display.
Below in conjunction with Fig. 2 A to Fig. 6 A and Fig. 2 B to Fig. 6 B, the formation method to above-mentioned Digital Micromirror Device is described, Fig. 2 A to Fig. 6 A is the cross-sectional view of existing Digital Micromirror Device in each production phase along the first cross section, Fig. 2 B to Fig. 6 B is the cross-sectional view of existing Digital Micromirror Device in each production phase along the second cross section, described first cross section orthogonal is through described catoptron, hinge and the first support column, and described second cross section orthogonal is in the first cross section and pass perpendicularly through described catoptron, hinge, fixed electorde and the second support column.Particularly, the method comprises:
Shown in composition graphs 1, Fig. 2 A and Fig. 2 B, the substrate 1 being formed with micro mirror element control circuit (not shown) is provided, form sacrifice layer 8 on the base 1, two the first support columns 3 and two the second support columns 5 are formed in sacrifice layer 8, there is in first support column 3 the first through hole (mark) exposing substrate 1, there is in the second support column 5 the second through hole (mark) exposing substrate 1.
Continue, shown in composition graphs 1, Fig. 2 A and Fig. 2 B, in the first through hole of the first support column 3, to form the first conductive plunger 9 be electrically connected with control circuit, in the second through hole of the second support column 5, form the second conductive plunger 10 be electrically connected with control circuit.
Shown in composition graphs 1, Fig. 3 A and Fig. 3 B, sacrifice layer 8, first support column 3, second support column 5, first conductive plunger 9 and the second conductive plunger 10 form conductive material layer 21a, be positioned at layer of dielectric material 22a above conductive material layer 21a, be positioned at graphical photoresist layer 11 above layer of dielectric material 22a.
Shown in composition graphs 1, Fig. 4 A and Fig. 4 B, with graphical photoresist layer 11 for mask, shown in layer of dielectric material 22a(Fig. 3 A and Fig. 3 B) carry out dry etching, to form dielectric layer 22.
Composition graphs 1, shown in Fig. 5 A and Fig. 5 B, continue with graphical photoresist layer 11 as mask, shown in conductive material layer 21a(Fig. 4 A and Fig. 4 B) carry out dry etching, to form conductive layer 21, the conductive layer 21 be positioned at above the first support column 3 and the first conductive plunger 9 forms hinge 2 jointly with dielectric layer 22, the conductive layer 21 be positioned at above the second support column 5 and the second conductive plunger 10 forms fixed electorde 4 jointly with dielectric layer 22, by arranging dielectric layer 22 above conductive layer 21, the intensity of hinge 2 can be improved, thus improve the reliability (i.e. the rotary number of times of hinge 2) of hinge 2.
Shown in composition graphs 1, Fig. 6 A and Fig. 6 B, wet etching method is utilized to remove shown in graphical photoresist layer 11(Fig. 5 A and Fig. 5 B).
But, utilize described wet etching method graphical photoresist layer can not be removed clean, make hinge 2 and fixed electorde 4 upper surface have photoresist 11a to remain.
Summary of the invention
The problem to be solved in the present invention is: the graphical photoresist layer above hinge cannot be removed clean by existing Digital Micromirror Device formation method.
Another problem that the present invention will solve is: the graphical photoresist layer above fixed electorde cannot be removed clean by existing Digital Micromirror Device formation method.
For solving the problem, the invention provides a kind of formation method of Digital Micromirror Device, comprising:
The substrate being formed with micro mirror element control circuit is provided;
Form the first sacrifice layer on the substrate;
Described first sacrifice layer forms conductive material layer, be positioned at the layer of dielectric material on described conductive material layer and be positioned at the graphical photoresist layer in described layer of dielectric material;
With described graphical photoresist layer for mask, dry etching is carried out, to form hinge to described layer of dielectric material and conductive material layer;
After forming described hinge, wet etching method is utilized to remove the described graphical photoresist layer of part;
Anisotropic dry etching is carried out to the remainder of described graphical photoresist layer.
Optionally, the thickness of described graphical photoresist layer is 12600 to 15400 dusts.
Optionally, the remainder thickness of described graphical photoresist layer is 300 to 400 dusts.
Optionally, the etching gas that described anisotropic dry etching adopts comprises oxygen.
Optionally, the etching gas that described anisotropic dry etching adopts also comprises nitrogen.
Optionally, the technological parameter of described anisotropic dry etching comprises: the throughput ratio of oxygen and nitrogen is less than 1:1, and radio-frequency power supply power is 540 to 660W, and bias power is 45 to 55W.
Optionally, the material of described first sacrifice layer is agraphitic carbon, monox, germanium or amorphous silicon.
Optionally, the material of described layer of dielectric material is monox, silicon nitride, silicon oxynitride or silicon oxide carbide.
Optionally, the material of described conductive material layer is gold, silver, copper, aluminium, titanium, chromium, molybdenum, cadmium, nickel or cobalt.
Optionally, also comprise: on described first sacrifice layer and hinge, form the second sacrifice layer;
Formed in described second sacrifice layer and be positioned at the conductive plunger be electrically connected above hinge and with hinge;
Described second sacrifice layer and conductive plunger form catoptron, and described catoptron is electrically connected with hinge by described conductive plunger.
Optionally, before described first sacrifice layer forms conductive material layer, also comprise:
In described first sacrifice layer, form the first support column being used for supporting hinges, described first support column has the first through hole exposing substrate;
The first conductive plunger be electrically connected with described Digital Micromirror Device control circuit is formed in described first through hole.
Optionally, dry etching is carried out with while forming hinge to described layer of dielectric material and conductive material layer, with described graphical photoresist layer for mask, dry etching is carried out to described layer of dielectric material and conductive material layer, to form fixed electorde in the both sides of described hinge.
Compared with prior art, technical scheme of the present invention has the following advantages:
Under the acting in conjunction of the wet etching successively carried out successively and anisotropic dry etching, the graphical photoresist layer above hinge is removed clean.While the graphical photoresist layer of removal, technical scheme of the present invention also has following beneficial effect:
1) dry etching method is adopted to form conductive layer in hinge, when utilizing anisotropic dry etching method to remove the remainder of graphical photoresist layer, all can not etch the first sacrifice layer below hinge, hinge is supported by the first sacrifice layer, there will not be the problem that hinge collapses;
2) graphical photoresist layer has enough thickness, and formed at dry etching in the step of hinge, graphical photoresist layer can protect the dielectric layer in hinge not to be etched;
3) compared with the technical scheme directly utilizing dry etching method to be removed by graphical photoresist layer, shorten the time of dry etching, alleviate the plasma damage that substrate is caused, improve the performance of Digital Micromirror Device.
Further, dry etching is carried out with while forming hinge to described layer of dielectric material and conductive material layer, also forms fixed electorde in the both sides of described hinge.In this case, the graphical photoresist layer above hinge is removed clean while, the graphical photoresist layer above fixed electorde can also be removed clean.
Accompanying drawing explanation
Fig. 1 is the spatial structure exploded view of existing a kind of Digital Micromirror Device;
Fig. 2 A to Fig. 6 A is the cross-sectional view of existing Digital Micromirror Device in each production phase along the first cross section, and described first cross section orthogonal is through described catoptron, hinge and the first support column;
Fig. 2 B to Fig. 6 B is the cross-sectional view of existing Digital Micromirror Device in each production phase along the second cross section, described second cross section orthogonal is in the first cross section and pass perpendicularly through described catoptron, hinge, fixed electorde and the second support column, Fig. 2 A is corresponding with Fig. 2 B, Fig. 3 A is corresponding with Fig. 3 B, Fig. 4 A is corresponding with Fig. 4 B, Fig. 5 A is corresponding with Fig. 5 B, and Fig. 6 A is corresponding with Fig. 6 B;
Fig. 7 A to Figure 17 A is the cross-sectional view of Digital Micromirror Device in each production phase along the first cross section in one embodiment of the present of invention, and described first cross section orthogonal is through described catoptron, hinge and the first support column;
Fig. 7 B to 17B is the cross-sectional view of Digital Micromirror Device in each production phase along the second cross section in one embodiment of the present of invention, described second cross section orthogonal is in the first cross section, and pass perpendicularly through described catoptron, hinge, fixed electorde and the second support column, wherein, Fig. 7 A is corresponding with Fig. 7 B, Fig. 8 A is corresponding with Fig. 8 B, Fig. 9 A is corresponding with Fig. 9 B, Figure 10 A is corresponding with Figure 10 B, Figure 11 A is corresponding with Figure 11 B, Figure 12 A is corresponding with Figure 12 B, Figure 13 A is corresponding with Figure 13 B, Figure 14 A is corresponding with Figure 14 B, Figure 15 A is corresponding with Figure 15 B, Figure 16 A is corresponding with Figure 16 B, Figure 17 A is corresponding with Figure 17 B.
Embodiment
Analyze discovery after deliberation, cause existing Digital Micromirror Device formation method the graphical photoresist layer above hinge cannot be removed clean reason to be: as fig. 5 a and fig. 5b, graphical photoresist layer 11 is for the protection of the dielectric layer 22 in hinge 2, the process dielectric layer 22 forming hinge 2 at dry etching can not be etched, in order to make graphical photoresist layer 11 can play this effect, need ensure that graphical photoresist layer 11 has enough thickness; As shown in Figure 6 A and 6 B, remove in the step of graphical photoresist layer 11 utilizing wet etching method, can be removed clean to make graphical photoresist layer 11, need ensure that the time of wet etching is longer, but, can cause like this dielectric layer 22 two ends in hinge 2 be etched agent corrosion, in order to prevent the two ends of dielectric layer 22 be etched agent corrosion, so that affect the performance of Digital Micromirror Device, need ensure that the time of wet etching can not be oversize, thus cause the upper surface of hinge 2 to have photoresist 11a to remain.
In order to solve the problem, work out the first solution: after utilizing wet etching method to remove graphical photoresist layer, adopt isotropic dry etching method to remove the photoresist remaining in hinge upper surface.But, the sacrifice layer below hinge can be caused so simultaneously also to be etched, to make hinge cannot be sacrificed layer and support, cause hinge easily to collapse.
Given this, have and work out the second solution: the thickness reducing graphical photoresist layer, be mask with graphical photoresist layer, carry out dry etching with after forming hinge, utilize the method for wet etching to remove graphical photoresist layer.But can cause like this being formed in the step of hinge at dry etching, graphical photoresist layer can be etched, and makes the dielectric layer in hinge out exposed, causes dielectric layer to be also etched, have impact on the performance of Digital Micromirror Device.
Given this, have and work out the third solution: the thickness reducing graphical photoresist layer, be mask with graphical photoresist layer, carry out dry etching to form the dielectric layer in hinge, then, remove graphical photoresist layer, take dielectric layer as mask, carry out wet etching to form the conductive layer in hinge.Although this scheme there will not be the problem having photoresist residual above hinge, formed in the process of conductive layer at wet etching, etching agent also can corrode the sacrifice layer below hinge simultaneously, makes hinge cannot be sacrificed layer and supports, cause hinge easily to collapse.
Given this, work out the 4th kind of solution: with graphical photoresist layer be mask, dry etching formed after hinge, directly utilizes dry etching method to be removed by graphical photoresist layer.Although this method there will not be the problem having photoresist residual above hinge, but, in the step of dry etching figure photoresist layer, substrate can be exposed in plasma environment, causes substrate to be subject to plasma damage, because graphical photoresist layer is thicker, make the dry etching time longer, therefore substrate can be exposed in plasma environment for a long time, the plasma damage causing substrate to be subject to is comparatively serious, and then have impact on the performance of Digital Micromirror Device.
Given this; investigated again solution of the present invention: after utilizing wet etching method removal partial graphical photoresist layer; anisotropic dry etching is carried out to the remainder of graphical photoresist layer; while the whole graphical photoresist layer of guarantee is totally removed; both the problem can not corroded the first sacrifice layer below hinge so that there will not be hinge to collapse; the dielectric layer in hinge can be protected again not to be etched, to also reduce the plasma damage that substrate is subject to.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
Shown in composition graphs 1, Fig. 7 A and Fig. 7 B, provide substrate 100, substrate 100 is formed with micro mirror element control circuit (not shown).
In the present embodiment, described micro mirror element control circuit is CMOS SRAM circuit.
Continue shown in composition graphs 1, Fig. 7 A and Fig. 7 B, substrate 100 is formed the first sacrifice layer 110, the first support column 120 and the second support column 130 is formed in the first sacrifice layer 110, first support column 120 has the first through hole (mark) exposing substrate 100, and the second support column 130 has the second through hole (mark) exposing substrate 100.
In the present embodiment, the formation method of the first support column 120 and the second support column 130 comprises: carry out graphical treatment to the first sacrifice layer 110, to form the first opening (mark) and the second opening (mark) that expose substrate 100 in bottom in the first sacrifice layer 110; Form covering first sacrifice layer 110 and the first medium layer of full described first opening of filling and the second opening; Carry out cmp process to described first medium layer, to remove the first medium layer exceeding described first opening and the second opening, described first opening and the second opening are filled full by remaining first medium layer; The first sacrifice layer 110, be filled in the first opening and the second opening first medium layer on form graphical photoresist layer, the position of described graphical photoresist layer described first through hole of definition and the second through hole; With described graphical photoresist layer for mask etches, retain the first medium layer of described first opening sidewalls predetermined thickness, retain the first medium layer of described second opening sidewalls predetermined thickness, thus formation has the first support column 120 of the first through hole, has the second support column 130 of the second through hole.
In subsequent technique, the first sacrifice layer 110 can be removed.In a particular embodiment, the material of the first sacrifice layer 110 is agraphitic carbon, makes the first sacrifice layer 110 to be removed easily in subsequent technique totally.In other embodiments, the material of the first sacrifice layer 110 also can be suitable for the material removed, as monox, germanium or amorphous silicon etc. for other.
In a particular embodiment, the material of described first medium layer is monox, silicon nitride, silicon oxynitride, silit or silicon oxide carbide.
Continue shown in composition graphs 1, Fig. 7 A and Fig. 7 B, in the first through hole of the first support column 120, form the first conductive plunger 140 be electrically connected with micro mirror element control circuit, in the second through hole of the second support column 130, form the second conductive plunger 150 be electrically connected with micro mirror element control circuit.
In the present embodiment, the formation method of the first conductive plunger 140 and the second conductive plunger 150 comprises: form covering first sacrifice layer 110, first support column 120, second support column 130 and the conductive material layer of full described first through hole of filling and the second through hole; Cmp process is carried out to described conductive material layer, to remove the conductive material layer exceeding the first support column 120 and the second support column 130, forms the first conductive plunger 140 and the second conductive plunger 150.
In a particular embodiment, the material of described conductive material layer is tungsten or copper.
Shown in composition graphs 1, Fig. 8 A and Fig. 8 B, the first sacrifice layer 110, first support column 120, first conductive plunger 140, second support column 130 and the second conductive plunger 150 form conductive material layer 161a, are positioned at the layer of dielectric material 162a on conductive material layer 161a and are positioned at the graphical photoresist layer 170 on layer of dielectric material 162a.
In the present embodiment, the material of conductive material layer 161a is gold, silver, copper, aluminium, titanium, chromium, molybdenum, cadmium, nickel or cobalt, and the material of layer of dielectric material 162a is monox, silicon nitride, silicon oxynitride or silicon oxide carbide.
Shown in composition graphs 1, Fig. 9 A and Fig. 9 B, with graphical photoresist layer 170 for mask, shown in layer of dielectric material 162a and conductive material layer 161a(Fig. 8 A and Fig. 8 B) carry out dry etching, to form the fixed electorde 180 that hinge 160 and two lay respectively at hinge 160 both sides.The two ends of hinge 160 are supported by the first support column 120, and hinge 160 is electrically connected with the micro mirror element control circuit in substrate 100 by the first conductive plunger 140.Fixed electorde 180 is supported by the second support column 130, and fixed electorde 180 is electrically connected with the micro mirror element control circuit in substrate 100 by the second conductive plunger 150.
In the present embodiment, the described dry etching method for the formation of hinge 160 and fixed electorde 180 is anisotropic dry etching method.
Hinge 160 and fixed electorde 180 include: conductive layer 161 and the dielectric layer 162 be positioned at above conductive layer 161.Due to the existence of dielectric layer 162 in hinge 160, improve the intensity of hinge 160, thus the reliability (i.e. the rotary number of times of hinge 160) of hinge 160 can be improved.
In the step of described dry etching, in order to protect the dielectric layer 162 in hinge 160 to be etched, need ensure that graphical photoresist layer 170 has enough thickness.In the present embodiment, the thickness of graphical photoresist layer 170 is 12600 to 15400 dusts.
In the present embodiment, hinge 160 and fixed electorde 180 are synchronously formed, and in other embodiments, hinge 160 and fixed electorde 180 also can successively be formed.
Shown in composition graphs 1, Figure 10 A and Figure 10 B, wet etching method is utilized to remove shown in partial graphical photoresist layer 170(Fig. 9 A and Fig. 9 B), after described wet etching, above hinge 160 and fixed electorde 180, be also coated with the remainder 171 of graphical photoresist layer.
Remove in the step of partial graphical photoresist layer at described wet etching, two ends in order to avoid hinge 160 dielectric layer 162 can be etched agent corrosion, should the conservative control wet etching time, prevent wet etching overlong time, therefore, after described wet etching, graphical photoresist layer 170 can not be removed clean, and causes the graphical photoresist layer above hinge 160 and fixed electorde 180 to also have residue.
Find after deliberation, in described wet etching step, when the thickness of the remainder 171 of graphical photoresist layer is 300 to 400 dust, can either prevent the two ends of hinge 160 dielectric layer 162 be etched agent corrosion, again can the required time of the graphical photoresist layer remainder 171 of the follow-up removal of conservative control, avoid the etching time of graphical photoresist layer remainder 171 long, alleviate the plasma damage that substrate 100 is subject to.
While described wet etching removes partial graphical photoresist layer, also can remove described dry etching simultaneously and form the polymkeric substance formed in hinge 160 and fixed electorde 180 step.
Shown in composition graphs 1, Figure 11 A and Figure 11 B, be represented by dotted lines in the remainder 171(figure of graphical photoresist layer) carry out anisotropic dry etching, whole graphical photoresist layer is removed neatly.
In the present embodiment, the etching gas that described anisotropic dry etching adopts comprises oxygen.Can there is chemical reaction with the remainder 171 of graphical photoresist layer in oxygen, therefore, the remainder 171 of graphical photoresist layer under the acting in conjunction of chemical action and physical action, can be removed by described anisotropic dry etch step.In addition, by oxygen produce plasma bombardment effect under, described dry etching can also be removed to form in hinge 160 and fixed electorde 180 step residual polymkeric substance.
In the present embodiment, the etching gas that described anisotropic dry etching adopts also comprises nitrogen.After adding nitrogen in etching gas, the removal speed of the remainder 171 of graphical photoresist layer can not only be improved, described dry etching can also be strengthened to form the removal of residual polyalcohol in hinge 160 and fixed electorde 180 step.
In a particular embodiment, the technological parameter of described anisotropic dry etching comprises: the throughput ratio of oxygen and nitrogen is less than 1:1, and radio-frequency power supply power is 540 to 660W, and bias power is 45 to 55W.In this case, the time controlling described anisotropic dry etching is 10 to 20s, the remainder 171 of graphical photoresist layer can be removed totally.
Research finds, when described anisotropic dry etch step adopts above-mentioned technological parameter, can reduce to the plasma damage that substrate 100 causes in dry etch step, to improve the performance of Digital Micromirror Device.
When the throughput ratio of oxygen and nitrogen is less than 1:1, the etching selection ratio between the remainder 171 of graphical photoresist layer and the first sacrifice layer 110 can be improved, make this etching selection ratio be approximately 1.5:1.
From the above, the technical scheme of the present embodiment is under the acting in conjunction of the wet etching successively carried out successively and anisotropic dry etching, is removed totally by the graphical photoresist layer 170 above hinge 160 and fixed electorde 180.In addition, the technical scheme of the present embodiment also has following beneficial effect:
1) dry etching method is adopted to form conductive layer 161 in hinge 160, when utilizing anisotropic dry etching method to remove the remainder 171 of graphical photoresist layer, all can not etch the first sacrifice layer 110 below hinge 160, hinge 160 can be supported by the first sacrifice layer 160, there will not be the problem that hinge 160 collapses;
2) graphical photoresist layer 170 has enough thickness, and formed at dry etching in the step of hinge 160, graphical photoresist layer can protect the dielectric layer 162 in hinge 160 not to be etched;
3) compared with the technical scheme directly utilizing dry etching method to be removed by graphical photoresist layer, the technical program shortens the time of dry etching, alleviates the plasma damage caused substrate 100, improves the performance of Digital Micromirror Device.
Although in described anisotropic dry etch step, also certain thickness can be removed by the first sacrifice layer 110 that hinge 160 covers, but also can form the second sacrifice layer above the first sacrifice layer in subsequent technique, described second sacrifice layer can make up the loss of the first sacrifice layer in this dry etch step.
Shown in composition graphs 1, Figure 12 A and Figure 12 B, the first sacrifice layer 110, hinge 160 and fixed electorde 180 form the second sacrifice layer 190.Two the first joint pins 200 and the 3rd support column 210 between two the first joint pins 200 is formed in the second sacrifice layer 190, first joint pin 200 to be positioned at above hinge 160 and to be connected with the end of hinge 160, and the 3rd support column 210 has the third through-hole (mark) exposing hinge 160.
In the present embodiment, the formation method of the first joint pin 200 and the 3rd support column 210 comprises: carry out graphical treatment to the second sacrifice layer 190, to form the 3rd opening (mark) and the 4th opening (mark) that expose hinge 160 upper surface in bottom in the second sacrifice layer 190; Form covering second sacrifice layer 190 and the second dielectric layer of full described 3rd opening of filling and the 4th opening; Cmp process is carried out to described second dielectric layer, to remove the second dielectric layer exceeding described 3rd opening and the 4th opening, forms the first joint pin 200 and the 3rd support column 210; Remove the part second dielectric layer in described 4th opening, retain the second dielectric layer of described 4th opening sidewalls predetermined thickness, to form third through-hole in the 3rd support column 210.
In subsequent technique, the second sacrifice layer 190 can be removed.In a particular embodiment, the material of the second sacrifice layer 190 is agraphitic carbon, makes can be removed totally by the second sacrifice layer 190 easily in subsequent technique.In other embodiments, the material of the second sacrifice layer 190 also can be suitable for the material removed, as monox, germanium or amorphous silicon etc. for other.
In a particular embodiment, the material of described second dielectric layer is monox, silicon nitride, silicon oxynitride, silit or silicon oxide carbide.
Shown in composition graphs 1, Figure 13 A and Figure 13 B, in the third through-hole of the 3rd support column 210, form the conductive plunger 220 be electrically connected with hinge 160.
In the present embodiment, the formation method of conductive plunger 220 comprises: form covering second sacrifice layer 190 and the first joint pin 200 and fill the conductive material layer of full described third through-hole; Carry out cmp process, to remove the conductive material layer exceeding the first joint pin 200, form conductive plunger 220.
In a particular embodiment, the material of described conductive material layer is tungsten or copper.
Shown in composition graphs 1, Figure 14 A and Figure 14 B, the second sacrifice layer 190 forms the catoptron 230 be electrically connected with conductive plunger 220.Catoptron 230 is electrically connected with hinge 160 by conductive plunger 220.
In the present embodiment, the formation method of catoptron 230 comprises: on the second sacrifice layer 190, first joint pin 200, the 3rd support column 210 and conductive plunger 220, form reflecting mirror material layer; Carry out graphically, to form catoptron 230 to this reflecting mirror material layer.
In a particular embodiment, the material of catoptron 230 is gold, silver, copper, aluminium, titanium, chromium, molybdenum, cadmium, nickel or cobalt.
As shown in fig. 15 a and fig. 15b, the second sacrifice layer 190, first joint pin 200 and catoptron 230 form the 3rd sacrifice layer 240, in the 3rd sacrifice layer 240, form the second joint pin 250 be connected with the first joint pin 200.
In the present embodiment, the formation method of the second joint pin 250 with reference to the formation method of the first joint pin 200, can not repeat them here.
Continue with reference to shown in Figure 15 A and Figure 15 B, the 3rd sacrifice layer 240 and the second joint pin 250 form capping layer 260, and capping layer 260 has the window 261 exposing the 3rd sacrifice layer 240.
In the present embodiment, the material of capping layer 260 is monox, silicon nitride, silicon oxynitride, silit or silicon oxide carbide.
Shown in composition graphs 1, Figure 16 A and Figure 16 B, remove shown in the first sacrifice layer 110, second sacrifice layer 190 and the 3rd sacrifice layer 240(Figure 15 A and Figure 15 B).
In the present embodiment, ashing method is utilized the first sacrifice layer 110, second sacrifice layer 190 and the 3rd sacrifice layer 240 to be removed.In cineration step, oxygen enters the window 261 on capping layer 260, thus the first sacrifice layer 110, second sacrifice layer 190 and the 3rd sacrifice layer 240 is removed.
After removing the first sacrifice layer 110, second sacrifice layer 190 and the 3rd sacrifice layer 240, hinge 160 is supported on above substrate 100 by the first support column 120 being positioned at two ends, fixed electorde 180 is supported on above substrate 100 by the second support column 130, catoptron 230 is supported on above hinge 160 by the 3rd support column 210, and hinge 160 is connected with capping layer 260 by the first joint pin 200 and the second joint pin 250.
As shown in Figure 17 A and Figure 17 B, formed and cover capping layer 260 and also fill shown in full window 261(Figure 16 A and Figure 16 B) sealant 270.
In the present embodiment, the material of sealant 270 is monox, silicon nitride, silicon oxynitride, silit or silicon oxide carbide.
The effect of capping layer 260 and sealant 270 is: prevent water vapor, dust, impurity etc. from entering in Digital Micromirror Device, to improve the life-span of Digital Micromirror Device.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (12)
1. a formation method for Digital Micromirror Device, is characterized in that, comprising:
The substrate being formed with micro mirror element control circuit is provided;
Form the first sacrifice layer on the substrate;
Described first sacrifice layer forms conductive material layer, be positioned at the layer of dielectric material on described conductive material layer and be positioned at the graphical photoresist layer in described layer of dielectric material;
With described graphical photoresist layer for mask, dry etching is carried out, to form hinge to described layer of dielectric material and conductive material layer;
After forming described hinge, wet etching method is utilized to remove the described graphical photoresist layer of part;
Anisotropic dry etching is carried out to the remainder of described graphical photoresist layer.
2. formation method according to claim 1, is characterized in that, the thickness of described graphical photoresist layer is 12600 to 15400 dusts.
3. formation method according to claim 2, is characterized in that, the remainder thickness of described graphical photoresist layer is 300 to 400 dusts.
4. the formation method according to any one of claims 1 to 3, is characterized in that, the etching gas that described anisotropic dry etching adopts comprises oxygen.
5. formation method according to claim 4, is characterized in that, the etching gas that described anisotropic dry etching adopts also comprises nitrogen.
6. formation method according to claim 5, is characterized in that, the technological parameter of described anisotropic dry etching comprises: the throughput ratio of oxygen and nitrogen is less than 1:1, and radio-frequency power supply power is 540 to 660W, and bias power is 45 to 55W.
7. formation method according to claim 1, is characterized in that, the material of described first sacrifice layer is agraphitic carbon, monox, germanium or amorphous silicon.
8. formation method according to claim 1, is characterized in that, the material of described layer of dielectric material is monox, silicon nitride, silicon oxynitride or silicon oxide carbide.
9. formation method according to claim 1, is characterized in that, the material of described conductive material layer is gold, silver, copper, aluminium, titanium, chromium, molybdenum, cadmium, nickel or cobalt.
10. formation method according to claim 1, is characterized in that, also comprise:
Described first sacrifice layer and hinge form the second sacrifice layer;
Formed in described second sacrifice layer and be positioned at the conductive plunger be electrically connected above hinge and with hinge;
Described second sacrifice layer and conductive plunger form catoptron, and described catoptron is electrically connected with hinge by described conductive plunger.
11. formation methods according to claim 1, is characterized in that, before described first sacrifice layer forms conductive material layer, also comprise:
In described first sacrifice layer, form the first support column being used for supporting hinges, described first support column has the first through hole exposing substrate;
The first conductive plunger be electrically connected with described Digital Micromirror Device control circuit is formed in described first through hole.
12. formation methods according to claim 1, it is characterized in that, dry etching is carried out with while forming hinge to described layer of dielectric material and conductive material layer, with described graphical photoresist layer for mask, dry etching is carried out to described layer of dielectric material and conductive material layer, to form fixed electorde in the both sides of described hinge.
Priority Applications (1)
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| US5198390A (en) * | 1992-01-16 | 1993-03-30 | Cornell Research Foundation, Inc. | RIE process for fabricating submicron, silicon electromechanical structures |
| CN1431680A (en) * | 2002-01-10 | 2003-07-23 | 旺宏电子股份有限公司 | Method for forming structure of fine sizes |
| CN101281379A (en) * | 2007-04-03 | 2008-10-08 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist as well as method for reworking of photoetching technology |
| CN102354052A (en) * | 2011-09-30 | 2012-02-15 | 上海丽恒光微电子科技有限公司 | Digital micro-mirror device and forming method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5198390A (en) * | 1992-01-16 | 1993-03-30 | Cornell Research Foundation, Inc. | RIE process for fabricating submicron, silicon electromechanical structures |
| CN1431680A (en) * | 2002-01-10 | 2003-07-23 | 旺宏电子股份有限公司 | Method for forming structure of fine sizes |
| CN101281379A (en) * | 2007-04-03 | 2008-10-08 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist as well as method for reworking of photoetching technology |
| CN102354052A (en) * | 2011-09-30 | 2012-02-15 | 上海丽恒光微电子科技有限公司 | Digital micro-mirror device and forming method thereof |
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