CN104517825A - Gate oxide growth method - Google Patents
Gate oxide growth method Download PDFInfo
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- CN104517825A CN104517825A CN201310450743.4A CN201310450743A CN104517825A CN 104517825 A CN104517825 A CN 104517825A CN 201310450743 A CN201310450743 A CN 201310450743A CN 104517825 A CN104517825 A CN 104517825A
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- gate oxide
- oxygen
- dce
- temperature
- oxide growth
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Abstract
The invention discloses a gate oxide growth method. The method comprises the following steps: placing a wafer needing gate oxide growth in a reaction chamber, introducing oxygen to enable the wafer to be arranged in an oxygen atmosphere, and then increasing the temperature of the wafer until the temperature rises to a technical temperature; maintaining the temperature at the technical temperature and maintaining introduction of the oxygen, and starting introducing DCE to enable the wafer to be arranged in an oxygen and DCE mixed atmosphere; maintaining the temperature at the technical temperature and maintaining the introduction of the oxygen and the DCE, and starting introducing hydrogen until the gate oxide growth is completed; and closing the introduction of the DCE, the hydrogen and the oxygen, and starting introducing nitrogen until the temperature of the wafer is reduced to a non-technical temperature. According to such a gate oxide growth method, the gas DCE containing C1 is added, and in the step of the gate oxide growth, the C1 generated by the DCE due to thermal oxidization plays the role of a catalyst for reaction between O and Si, such that the oxidation rate is greatly improved. The gate oxide growth method is higher in production efficiency compared to a conventional dry-method oxidation process.
Description
Technical field
The present invention relates to semiconductor fabrication process field, particularly relate to a kind of gate oxide growth method.
Background technology
Traditional when disk surfaces growth grid oxygen, generally adopt dry oxidation logical HCl or DCE(dichloroethylene simultaneously, C
2h
2cl
2) method, the method is simple and quality better, is applicable to general CMOS product.
But, in the development process of power device, often can need to form the thicker grid oxygen of thickness.If adopt traditional gate oxide growth method, then the process time is oversize, thus greatly reduces production efficiency.
Summary of the invention
Based on this, be necessary a kind of gate oxide growth method providing production efficiency higher.
A kind of gate oxide growth method, comprises the steps:
Step one, will the disk carrying out gate oxide growth be needed to put into reative cell, pass under oxygen makes described disk be placed in oxygen atmosphere, then heating direct is carried out to described disk and be increased to technological temperature to temperature;
Step 2, keep temperature be technological temperature and maintain passing into of oxygen, start to pass under DCE makes described disk be placed in the mixing atmosphere of oxygen and DCE;
Step 3, keep temperature to be technological temperature and maintain passing into of oxygen and DCE, starting to pass into hydrogen until gate oxide growth completes;
Step 4, close the passing into of DCE, hydrogen and oxygen, and start to pass into nitrogen until described disk is cooled to non-process temperature.
In one embodiment, in step 2, the flow of DCE is 200cc ~ 400cc, and the flow of oxygen is 5000cc ~ 13000cc.
In one embodiment, in step 3, the flow of DCE is 200cc ~ 400cc, and the flow of oxygen is 5000cc ~ 13000cc, and the flow of hydrogen is 6000cc ~ 15000cc.
In one embodiment, in step 3, the flow of DCE is 320cc, and the flow of oxygen is 7000cc, and the flow of hydrogen is 13000cc.
In one embodiment, in step one, step 2 and step 3, technological temperature is 850 DEG C ~ 1000 DEG C.
In one embodiment, in step 4, non-process temperature is 700 DEG C ~ 850 DEG C.
This gate oxide growth method is by adding the gas DCE(dichloroethylene containing Cl), in the step of gate oxide growth, the Cl that DCE generates due to thermal oxidation can be accumulated in Si-SiO
2near interface, Cl and Si reaction generates chlorine silicide, and chlorine silicide poor stability, is easily transformed into SiO when aerobic
2, therefore, Cl plays the effect of the catalyst of O and Si reaction, thus substantially increases oxidation rate.This gate oxide growth method, relative to traditional dry oxidation method, production efficiency is higher.
Accompanying drawing explanation
Fig. 1 is the flow chart of the gate oxide growth method of an execution mode.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar improvement when intension of the present invention, therefore the present invention is by the restriction of following public concrete enforcement.
As shown in Figure 1, the gate oxide growth method of an execution mode, comprises the steps:
S10, will the disk carrying out gate oxide growth be needed to put into reative cell, pass under oxygen makes disk be placed in oxygen atmosphere, then heating direct is carried out to disk and be increased to technological temperature to temperature.
Disk directly can be bought and obtain, and also can process voluntarily and obtain.
The flow of oxygen adopts conventional value, generally speaking, also can not add special restriction, as long as under disk can be made finally to be placed in oxygen atmosphere.
Temperature when technological temperature refers to that equipment carries out gate oxide growth operation, arranging according to different vendor may difference to some extent, generally can select 850 DEG C ~ 1000 DEG C.
S20, keep temperature be technological temperature and maintain passing into of oxygen, start to pass under DCE makes disk be placed in the mixing atmosphere of oxygen and DCE.
Temperature when technological temperature refers to that equipment carries out gate oxide growth operation, arranging according to different vendor may difference to some extent, generally can select 850 DEG C ~ 1000 DEG C.
In S20, oxygen flow and DCE flow all can not do particular restriction, as long as both passable under substantially ensureing finally to make disk be in the mixing atmosphere of oxygen and DCE.
In present embodiment, the flow of oxygen is the flow of 5000cc ~ 13000cc, DCE is 200cc ~ 400cc.
S30, keep temperature to be technological temperature and maintain passing into of oxygen and DCE, starting to pass into hydrogen until gate oxide growth completes.
Temperature when technological temperature refers to that equipment carries out gate oxide growth operation, arranging according to different vendor may difference to some extent, generally can select 850 DEG C ~ 1000 DEG C.
In S30, the flow of DCE is 200cc ~ 400cc, and the flow of oxygen is 5000cc ~ 13000cc, and the flow of hydrogen is 6000cc ~ 15000cc.
Concrete, in present embodiment, the flow of DCE is 320cc, and the flow of oxygen is 7000cc, and the flow of hydrogen is 13000cc.
In gate oxide growth process, the Cl that DCE generates due to thermal oxidation can be accumulated in Si-SiO
2near interface, Cl and Si reaction generates chlorine silicide, and chlorine silicide poor stability, is easily transformed into SiO when aerobic
2, therefore, Cl plays the effect of the catalyst of O and Si reaction, thus substantially increases oxidation rate.
In addition, the water generated after oxidation of hydrogen also plays the effect of accelerated oxidation, and mix Cl in thermal oxidation process and can make containing a certain amount of Cl ion in oxide layer, Cl ion and Na ionic reaction, generate NaCl, thus can reduce the contamination of Na ion, passivation SiO
2the activity of middle Na ion, suppresses or eliminates thermal oxidation defect, improving breakdown characteristics, improving the reliability and stability of semiconductor device.
Concrete reaction equation is as follows:
2C
2H
2Cl
2+3O
2→2H
2O+4CO
2+2Cl
2；
Cl
2+Si→SiCl
4；
SiCl
4+O
2→SiO
2+2Cl
2；
2H
2+O
2→H
2O；
2H
2O+Si→SiO
2+2H
2；
Si+O
2→SiO
2；
Cl
-+Na
+→NaCl。
Gate oxide growth terminal time needs thickness as required to determine, and ordinary circumstance, in order to obtain required thickness, is all need adjust through several times test and obtain the accurate process time.
S40, close the passing into of DCE, hydrogen and oxygen, and start to pass into nitrogen until disk is cooled to non-process temperature.
In S40, pass into nitrogen, disk is lowered the temperature under nitrogen atmosphere, avoid disk continue oxidation or stain.
Here temperature when non-process temperature refers to that equipment does not carry out gate oxide growth operation, is generally 700 DEG C ~ 850 DEG C.
This gate oxide growth method is by adding the gas DCE containing Cl, and in the step of gate oxide growth, the Cl that DCE generates due to thermal oxidation can be accumulated in Si-SiO
2near interface, Cl and Si reaction generates chlorine silicide, and chlorine silicide poor stability, is easily transformed into SiO when aerobic
2, therefore, Cl plays the effect of the catalyst of O and Si reaction, thus substantially increases oxidation rate.This gate oxide growth method, relative to traditional dry oxidation method, production efficiency is higher.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (6)
1. a gate oxide growth method, is characterized in that, comprises the steps:
Step one, will the disk carrying out gate oxide growth be needed to put into reative cell, pass under oxygen makes described disk be placed in oxygen atmosphere, then heating direct is carried out to described disk and be increased to technological temperature to temperature;
Step 2, keep temperature be technological temperature and maintain passing into of oxygen, start to pass under DCE makes described disk be placed in the mixing atmosphere of oxygen and DCE;
Step 3, keep temperature to be technological temperature and maintain passing into of oxygen and DCE, starting to pass into hydrogen until gate oxide growth completes;
Step 4, close the passing into of DCE, hydrogen and oxygen, and start to pass into nitrogen until described disk is cooled to non-process temperature.
2. gate oxide growth method according to claim 1, is characterized in that, in step 2, the flow of DCE is 200cc ~ 400cc, and the flow of oxygen is 5000cc ~ 13000cc.
3. gate oxide growth method according to claim 1, is characterized in that, in step 3, the flow of DCE is 200cc ~ 400cc, and the flow of oxygen is 5000cc ~ 13000cc, and the flow of hydrogen is 6000cc ~ 15000cc.
4. gate oxide growth method according to claim 3, is characterized in that, in step 3, the flow of DCE is 320cc, and the flow of oxygen is 7000cc, and the flow of hydrogen is 13000cc.
5. gate oxide growth method according to claim 1, is characterized in that, in step one, step 2 and step 3, technological temperature is 850 DEG C ~ 1000 DEG C.
6. gate oxide growth method according to claim 1, is characterized in that, in step 4, non-process temperature is 700 DEG C ~ 850 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310450743.4A CN104517825A (en) | 2013-09-27 | 2013-09-27 | Gate oxide growth method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310450743.4A CN104517825A (en) | 2013-09-27 | 2013-09-27 | Gate oxide growth method |
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|---|---|
| CN104517825A true CN104517825A (en) | 2015-04-15 |
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ID=52792960
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|---|---|---|---|
| CN201310450743.4A Pending CN104517825A (en) | 2013-09-27 | 2013-09-27 | Gate oxide growth method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582272A (en) * | 2020-12-11 | 2021-03-30 | 长江存储科技有限责任公司 | Semiconductor device and method for manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5891809A (en) * | 1995-09-29 | 1999-04-06 | Intel Corporation | Manufacturable dielectric formed using multiple oxidation and anneal steps |
| US6221789B1 (en) * | 1998-07-29 | 2001-04-24 | Intel Corporation | Thin oxides of silicon |
| CN102403272A (en) * | 2010-09-08 | 2012-04-04 | 北大方正集团有限公司 | Preparation method for high voltage complementary metal oxide semiconductor |
-
2013
- 2013-09-27 CN CN201310450743.4A patent/CN104517825A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5891809A (en) * | 1995-09-29 | 1999-04-06 | Intel Corporation | Manufacturable dielectric formed using multiple oxidation and anneal steps |
| US6221789B1 (en) * | 1998-07-29 | 2001-04-24 | Intel Corporation | Thin oxides of silicon |
| CN102403272A (en) * | 2010-09-08 | 2012-04-04 | 北大方正集团有限公司 | Preparation method for high voltage complementary metal oxide semiconductor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582272A (en) * | 2020-12-11 | 2021-03-30 | 长江存储科技有限责任公司 | Semiconductor device and method for manufacturing the same |
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| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20170926 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant before: Wuxi CSMC Semiconductor Co., Ltd. |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150415 |