CN104568756A - Medium-wave infrared spectrum identifiable detector - Google Patents
Medium-wave infrared spectrum identifiable detector Download PDFInfo
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- CN104568756A CN104568756A CN201510028916.2A CN201510028916A CN104568756A CN 104568756 A CN104568756 A CN 104568756A CN 201510028916 A CN201510028916 A CN 201510028916A CN 104568756 A CN104568756 A CN 104568756A
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Abstract
The invention discloses a medium-wave infrared spectrum identifiable detector. The medium-wave infrared spectrum identifiable detector is a light splitting and detection integrated detector formed by monolithically integrating a medium-wave infrared narrowband light filter array with space and spectrum light splitting capability, and a corresponding medium-wave infrared detector; detected light enters a corresponding picture element of the detector through narrowband light filtering units with different wavelengths so that the function of responding the light with the different wavelengths by different picture elements of the detector can be realized; and meanwhile, light responding signals with the different wavelengths in a waveband are obtained. The medium-wave infrared spectrum identifiable detector has a simple structure and can be used for achieving signal detection of all channels; spectrum scanning does not need to be carried out and the detection time is greatly saved; signal crosstalk caused by the thickness of a substrate of an independent light filter and indirect contact between the detector and a light splitting device when the detector and the light splitting device are adhered by a binding agent are avoided; and the picture elements of the detector and the light filter array are aligned by adopting a photoetching and alignment technology, the alignment precision is improved, and the alignment difficulty of traditional light splitting and detection division is solved.
Description
Technical field
The present invention relates to medium-wave infrared detector, specifically refer to the medium-wave infrared band detector that a kind of light splitting is integrated with detection, have spectral matching factor ability.
Background technology
Medium-wave infrared is one of three main infrared " atmospheric windows ", a lot of and our important gas be closely related of living has obvious characteristic absorption peak at medium-wave infrared atmospheric window, these characteristic absorption peaks are detected by analyzing, people can determine the content of certain gas, for carbon dioxide and methane: carbon dioxide is a kind of greenhouse gases the highest except water vapor extracellular concentration in air, its infrared absorption band is just in time in the strongest wave band of ground vapour system long-wave radiation, the increase of its concentration will reduce ground significantly to space reflection infrared energy, thus affect the radiation balance of ground vapour system, cause the change of global climate.Therefore, in order to understand Global climate change, usually need the change of Real-Time Monitoring gas concentration lwevel; And methane is a kind of gas of widespread use in society, be the principal ingredient of gas, people obtain easily simultaneously utilizing its, also perplex by its danger.Methane is inflammable and explosive, and its lower explosive limit is 5%, and the upper limit is 15%.Simultaneously it is also a kind of greenhouse gases, and its infrared absorbance is 15 ~ 30 times of carbon dioxide, therefore because industrial safety detects and the needs of environment, usually needs the local people of the methane-rich such as mine the monitoring carrying out real-time to methane content.
In addition, medium-wave infrared also has extensive and important application in fields such as space flight, meteorology, remote sensing, safety monitorings, in space exploration and Tres Haute Vitesse. Ammunition platform, also adopt medium-wave infrared spectral instrument more and more.And due to above-mentioned space, field, under water, rig-site utilization circumstance complication, have particular/special requirement and strict restriction to aspects such as volume, weight, resistance to shock and reliabilities, the traditional large-scale precision spectral instrument in laboratory cannot meet above-mentioned particular/special requirement.
In order to adapt to the application of these particular surroundingss, must realize the microminaturization of spectral instrument, portability, improve stability and the reliability of spectral instrument, people are finding effective solution route always for this reason.
Existing detector array all detects special spectrum wave band, and detector itself has response to the light of all wavelengths in institute's response wave band, does not have spectral matching factor ability, cannot distinguish the light of different wave length.Therefore, in traditional medium-wave infrared spectrometer, usual needs make the monochromatic light of different wave length arrive on the different pixels of detector after first detection light being carried out light splitting by grating or prism, determine which pixel which wavelength corresponding, thus form spectral signal through calibration.Although the method be combined with the spectroscopic modes such as grating and prism by detector can identify spectrum, and entirely can compose scanning, resolution is high, but these two kinds of spectral matching factor modes are the dispersion light splitting by grating or prism, resolution is higher, the total optical path required is longer, therefore inevitably needs the volume increasing spectrometer; And all relate to mechanical driving device, not only limit the speed that information reads, also greatly reduce resistance to shock and the reliability of instrument.And medium-wave infrared wave band more commonly Fourier transform spectrometer, it is scanned by the index glass of Michelson interferometer, then spectral information is obtained by Fourier transform, index glass scanning is very accurate mechanically moving device, spectral resolution is higher just requires that the motion scan of index glass distance is longer, therefore sizable volume is needed, and poor seismic behavior, the large-scale precision instrument being suitable only for the stationary applica-tions such as laboratory uses.
The micro light-filter array technique grown up the 1980s brings new thinking to addressing this problem, if micro light-filter array is combined with detector array, then can form the detector carrying spectral matching factor ability, this will simplify the beam splitting system of spectral instrument widely, improve the reliability of instrument, stability and optical efficiency, greatly reduce the volume of instrument simultaneously.Traditional micro light-filter array is the different-waveband optical filter that will process, and is adhered to the photosurface side of detector by the mode of splicing bonding, to replace grating or prism to carry out light splitting, and then reaches the effect reducing volume, improve stability.These methods are Be very effective in reduction volume and raising reliability etc., but still there are some shortcomings:
1, because optical filter and detector are bonded by bonding agent, optical filter and detector separated by a distance, if light at a certain angle through optical filter be irradiated on detector time there will be certain crosstalk, affect the accuracy to signal analysis;
Although 2, the mode stability of adhesive therefor bonding is pretty good, under the space environment of complexity, there is the rotten hidden danger come off, detector may be made to lose efficacy, reduce the life-span of spectrum identifiable design detector;
3, bonding alignment so used is that optical microscope is aimed at, and the alignment precision between filter arrays and detector pixel is not high enough, is difficult to aim at completely, therefore can sacrifice part pixel.
Integrated optical filter be we propose than filter arrays further spectroscopic modes, it is the novel spectroscopic modes of one got up through the optical filter single-chip integration of passage each different arrowband, eliminate filter arrays different units splicing difficulty with cannot be integrated further problem, if integrated optical filter directly can be accomplished on detector by semiconductor technology, just can solve the deficiency that between filter arrays and detector pixel, alignment precision is not high enough, eliminate spectra overlap, formation volume is minimum, weight is the lightest, the spectrum identifiable design detector that reliability is the highest.
Summary of the invention
In order to overcome, traditional raster/prism spectrometer volume is large, reliability is not high, the crosstalk that splicing optical filter/integrated optical filter and detector form spectrographic detection assembly with the deficiency such as to aim at, the present invention proposes a kind of light splitting and detect integrated, inherently to possess spectral matching factor ability medium-wave infrared detector.
As shown in Figure 1, medium-wave infrared spectrum identifiable design detector is by medium-wave infrared detector 1, substrate 2 and narrow-band filter array 3 single-chip integration, possess light splitting and detecting function simultaneously, light is detected when arriving detector photosurface after Filter Array after filtration during use, the pixel that different channel filter is corresponding just can only have response and detection to the light of respective channel wavelength, therefore spectral matching factor ability itself has been possessed, can directly use as micro spectrometer, without the need to light-splitting devices such as extra grating or prisms, also eliminate the deficiency that splicing optical filter/integrated optical filter and detector form spectrographic detection assembly.Medium-wave infrared spectrum identifiable design panel detector structure comprises the face battle array medium-wave infrared band detector 1 of substrate thinning, and is grown directly upon the narrow-band filter array 3 of the different spectrum channels that probe substrate 2 is accurately aimed at from detector pixel.
Medium-wave infrared band detector 1 of the present invention, can mercury cadmium telluride, quantum well or II class superlattice, adopt the infrared detector array of back-illuminated type or normal incidence working method.To be explained as example using InAs/GaSb II class superlattice back-illuminated detectors in the present invention, but be not limited to InAs/GaSb II class superlattice back-illuminated detectors.
Narrow-band filter array 3 of the present invention is based on F-P principle of interference, be medium high reflectivity film stack up and down, centre is the resonant cavity array 302 of different-thickness, reflectance coating system 301 under being combined with it on the detector, different resonant cavity thickness is obtained by the optical thin film technique and semiconductor technology combining etching or combination plated film in lower reflectance coating face of fastening, it is the upper reflectance coating system 303 of optical filter on the resonant cavity array 302 of different-thickness, resonator cavity and the upper and lower high reflectivity film stack of each thickness constitute one and are with the miniature narrow band pass filter that logical peak position is different, and filter unit is corresponding with the pixel of some on detector, also can one_to_one corresponding, detector pixel corresponding to each filter unit just can only receive through the logical light of this optical filter band, therefore, the detector pixel corresponding from different filter unit just can only respond the light of different wave length, thus define spectrum identifiable design detector, the optical response signal of different wave length can be obtained simultaneously.
Compared with prior art, the advantage that the present invention has is:
Structure the most simply, the most firm.Due to light-splitting device and detector single-chip integration, make detector itself possess spectral matching factor ability, without the need to extra beam splitting system, significantly can simplify the structure of spectral instrument and reduce volume and weight; Meanwhile, owing to not needing light-splitting device and detector to be bonded, drastically increase stability and the reliability of spectral instrument, be particularly suitable for the application in the microminiature spectral instruments such as space, field and Site Detection;
The spectral signal detection of each passage being realized simultaneously, without the need to carrying out spectral scan, significantly saving detection time;
Because light-splitting device is grown directly upon on detector photosurface, avoid due to optical filter when integrated optical filter is attached on detector window and the crosstalk caused when still there is certain distance between detector photosurface between different spectrum channel;
Detector pixel and filter arrays adopt photoetching to overlap lithography, and the pixel between light splitting with detection can mate completely, solve the registration difficult problem that traditional light splitting is discrete with detection.
Accompanying drawing explanation
Figure 1 shows that the structural representation of the present invention 32 passage medium-wave infrared band spectrum identifiable design detector, figure (a) is medium-wave infrared spectral detector sectional view, and figure (b) is medium-wave infrared spectral detector vertical view.
Figure 2 shows that InAs/GaSb II class superlattices detector structural representation.
Figure 3 shows that combination etching or combine coating method mask plate schematic diagram used.
Figure 4 shows that the spectral detector each passage transmission spectrum of medium-wave infrared wave band for 32 passages of carbon dioxide 4 ~ 4.6 μm of absorption bands.
Figure 5 shows that medium-wave infrared wave band is for the 32 channel spectrum detector each passage transmission spectrum of methane gas at 3.31 μm of absorption bands.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail, as shown in Figure 1, structure of the present invention is GaSb substrate 1, be grown on the InAs/GaSb II class superlattice medium-wave infrared detector 2 on substrate 1, at substrate back by the narrow-band filter array 3 of combination lithographic technique growth on medium-wave infrared detector.
Wherein the selection of medium-wave infrared detector is not limited to InAs/GaSb II class superlattices detector, can be that responding range is in any materials of medium-wave infrared wave band, the detector of arbitrary structures.
Selected filter sheet structure is (LH)
s(xL) (HL)
sor (HL)
s(xH) (LH)
s, s is the reflecting plate logarithm that high and low refractive index material is formed, and upper and lower high reflectivity film stack forms Mirror Symmetry, and under the prerequisite ensureing little material optical absorption loss, highly reflecting films coefficient more transmission peaks bandwidth is narrower, and spectral resolution is higher, S>1.L, H represent low respectively, the optical thickness λ of high-index material
0/ (4n
l), λ
0/ (4n
h), the optical thickness that xL represents resonator cavity is x times of λ
0/ (4n
l) or λ
0/ (4n
h), will make a series of stepped change of x value appearance by combination etching or combination plated film, be also that a series of stepped change appears in resonant cavity thickness, different-thickness resonator cavity forms the miniature narrow-band filter array of a series of different transmission peaks by from upper and lower film system.By selecting suitable central wavelength lambda
0, the transmission wave band of filter arrays can be allowed to be in any one wave band in medium-wave infrared.Below with for CO
2characteristic absorption band and CH
43.31 μm of characteristic absorption bands make proposition 2 kinds of medium-wave infrared spectrum identifiable design detectors with combined etching tech.
Embodiment one is (for CO
2the spectrum identifiable design detector of characteristic absorption band):
4.27 μm is a principal character peak of carbon dioxide, and be also in medium-wave infrared wave band (3 ~ 5um) atmospheric window, therefore the present embodiment is around CO
2the CO of 32 passages is designed at 4.27 μm of characteristic absorption peaks
2characteristic spectrum identifiable design detector.In order to by CO
2characteristic absorption wave band all covers, and each for filter arrays passage is distributed in 4 ~ 4.6 mu m wavebands by the present embodiment.Optical filter film structure is (LH)
5(xL) (HL)
5, wherein lower membrane is (LH)
5, xL is the optical thickness of resonator cavity step in filter arrays, and its value determines the position of transmission peaks, and spectrophotometric spectra wave band selected in the present embodiment is 4 ~ 4.6 μm, and corresponding x value is 1.87 ~ 2.17; Superstructure is (HL)
5, with lower membrane system (LH)
5in Mirror Symmetry.The germanium rete (n=4.08) of H to be thickness be 262.3nm, the silicon monoxide rete (n=1.85) of L to be thickness be 578.4nm, λ
0for initial center wavelength chooses λ herein
0it is 4.27 μm.
(1) making of InAs/GaSb II class superlattice back-illuminated detectors (Fig. 2):
Detector adopts the p-i-n junction structure of back incident-type
First, Solid Source molecular beam epitaxy technique growth InAs/GaSb II class super crystal lattice material is adopted.Namely on GaSb substrate, molecular beam epitaxy, successively grown buffer layer, P type superlattice, i type superlattice, N-type superlattice, N-type contact layer and ohmic contact layer is passed through.
Then wet etching is adopted to form table top, sputtering growth SiO
2as passivation layer, inductively coupled plasma etching forms electrode hole, and electron beam evaporation TiPtAu reasonable offer contact electrode, electron beam evaporation TiAu as reflection horizon, then grows indium post above, so far complete preceding working procedure.The single photosensitive unit of gained detector and public electrode structure are as shown in Figure 2.The device obtained, through later process, comprises back side mechanical reduction, cutting and the inverse bonding of CTIA IV type circuit and interconnects, final formation InAs/GaSb II class superlattice medium-wave infrared detector.
(2) make filter arrays on the detector, make it possess light splitting function:
At the thinning good detector back side, make back side alignment mark by double-sided overlay, accurately can aim at the detector pixel in front when making to be coated with integrated optical filter overleaf, then, lower reflectance coating system (LH) is coated with by the method for vacuum coating
5resonant cavity xL, the germanium rete (n=4.08) of H to be thickness be 262.3nm, the silicon monoxide rete (n=1.85) of L to be thickness be 578.4nm, different-thickness resonator cavity xL can be made by combined etching tech: the oxide film first plating 2.17L (1253nm) on the detector back side, then cavity is opened, take out detector, by 5 alignments (as Fig. 3), etch thicknesses is followed successively by: 23.6nm, 29nm, 34.4nm, 39.8nm, 45.2nm, so just can obtain 8 × 4 resonant-cavity surface battle arrays of gross thickness at 1081nm (1.87L) ~ 1253nm (2.17L), and each step thicknesses is about 5.4nm.Then upper layer film system (HL) is carried out on this basis
5be coated with, rate of sedimentation now due to plated film is everywhere the same, although so resonant cavity thickness is different, the thickness of upper layer film system is also identical, only have resonant cavity thickness different so just define at the back side of detector, the duplicate integrated narrow-band filter array of upper and lower high-reflecting film, the ability that this optical filter will make detector obtain wavelength recognition, can offer an explanation out the spectral information (as Fig. 4) in 4 ~ 4.6 μm of medium-wave infrared wave bands.
The spectrum identifiable design detector formed can directly as micro spectrometer use, and the spectral information of detection 4 ~ 4.6 mu m wavebands, can be used as the micro spectrometer of detection gas concentration lwevel.
Embodiment two is (for CH
4the spectrum identifiable design detector of 3.31 μm of characteristic absorption bands):
CH
4molecule has 4 intrinsic vibrations, corresponding generation 4 absorption peaks.Their wavelength is respectively 3.43,6.53,3.31,7.66 μm.The absorption band being wherein usually used in detecting methane content is 3.31 mu m wavebands.In order to by CH
4characteristic absorption wave band all covers, and each for filter arrays passage is distributed in 3.1 ~ 3.6 mu m wavebands by the present embodiment, and optical filter film structure is (LH)
5(xL) (HL)
5, wherein xL represents different resonant cavity thickness in filter arrays.The germanium rete (n=4.08) of H to be thickness be 202.2nm, the silicon monoxide rete (n=1.85) of L to be thickness be 445.9nm, λ
0for initial center wavelength is chosen for 3.3 μm.It is 3.1 ~ 3.6 microns that transmission wave band chooses wavelength.
Introduce below for CH
4the making of spectrum identifiable design detector of 3.31 μm of characteristic absorption bands:
General steps is identical with embodiment one, first produces InAs/GaSb II class superlattice medium-wave infrared detector; Then lower reflectance coating system (LH) is coated with at the back side of detector by vacuum coating
5, resonator cavity xL and upper reflectance coating system (HL)
5;
With CO
2spectrum identifiable design detector is the same, first, carries out alignment mark by double-sided overlay at the detector back side through substrate thinning, then is coated with lower reflectance coating system (LH) by vacuum coating
5resonant cavity xL, x value is 1.88 ~ 2.17 oxide film then plating 2.18L (972.2nm) at the detector back side, by carrying out combination etching (as Fig. 5) after double-sided overlay alignment mark, 5 times etch thicknesses is followed successively by: 18.4nm, 22.6nm, 26.8nm, 31nm, 35.2nm; 8 × 4 resonant-cavity surface battle arrays of gross thickness at 838.4nm ~ 972.2nm are obtained by the combination etching of 5 times.Each step thicknesses is about 4.2nm.Finally be coated with upper layer film system (HL) on this basis
5, so just made and can offer an explanation out 3.1 ~ 3.6 μm of medium-wave infrared band spectrum identifiable design detectors.Its spectrum channel as shown in Figure 5.
Claims (4)
1. a medium-wave infrared band spectrum identifiable design detector, comprises medium-wave infrared detector (1), substrate (2), and narrow-band filter array (3), is characterized in that:
Described medium-wave infrared band spectrum identifiable design panel detector structure is: medium-wave infrared detector (1) thinning after the upper integrated narrow-band filter array (3) of substrate (2);
Described narrow-band filter array (3) structure is: lower reflectance coating system (301) has successively and combines with it the resonant cavity array (302) and upper reflectance coating system (303) that firmly thickness do not wait.
2. a kind of medium-wave infrared band detector according to claim 1, is characterized in that: described medium-wave infrared detector (1) is mercury cadmium telluride, quantum well or the employing back-illuminated type of II class superlattice or the infrared detector array of normal incidence working method.
3. a kind of medium-wave infrared band detector according to claim 1, it is characterized in that: under described narrow-band filter array (3), reflectance coating system (301) and upper reflectance coating system (303) are Mirror Symmetry, and basic structure is (LH)
5, wherein H is thickness is λ
0the high-index material film of/4, L is thickness is λ
0the low-index material film of/4, λ
0for initial center wavelength.
4. a kind of medium-wave infrared band detector according to claim 1, it is characterized in that: resonant cavity array (302) thickness of described narrow-band filter array (3) does not wait, resonant cavity thickness is a series of stepped change, and different-thickness resonator cavity forms the miniature narrow-band filter array of a series of different transmission peaks jointly by from upper and lower film system.
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| CN106684180A (en) * | 2016-12-19 | 2017-05-17 | 中国科学院半导体研究所 | II type superlattice photoelectric detector possessing absorption enhancement structure and manufacturing method thereof |
| CN107340060A (en) * | 2017-06-27 | 2017-11-10 | 上海集成电路研发中心有限公司 | Infrared sensor structure, preparation method and detection system |
| CN107367330A (en) * | 2017-06-27 | 2017-11-21 | 上海集成电路研发中心有限公司 | Infrared sensor structure and preparation method thereof, detection system |
| CN107678082A (en) * | 2017-09-30 | 2018-02-09 | 广东欧珀移动通信有限公司 | Optical filter, camera lens module and imaging modules |
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| CN106684180A (en) * | 2016-12-19 | 2017-05-17 | 中国科学院半导体研究所 | II type superlattice photoelectric detector possessing absorption enhancement structure and manufacturing method thereof |
| CN107340060A (en) * | 2017-06-27 | 2017-11-10 | 上海集成电路研发中心有限公司 | Infrared sensor structure, preparation method and detection system |
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| CN110095079A (en) * | 2018-01-29 | 2019-08-06 | 陈亮嘉 | Confocal shape measurement system and confocal pattern method for detecting |
| CN109946750A (en) * | 2019-03-29 | 2019-06-28 | 中国科学院上海技术物理研究所 | A kind of infrared and multispectral complex probe imaging device of Terahertz that spectrum is configurable |
| CN109946750B (en) * | 2019-03-29 | 2023-12-26 | 中国科学院上海技术物理研究所 | Spectrum-configurable infrared and terahertz multispectral composite detection imaging device |
| CN110596034A (en) * | 2019-10-18 | 2019-12-20 | 杭州能工科技有限公司 | Small-size resonant infrared mixed gas detector |
| CN110596034B (en) * | 2019-10-18 | 2024-05-03 | 杭州能工科技有限公司 | Small-sized resonant infrared mixed gas detector |
| CN111081860A (en) * | 2019-11-28 | 2020-04-28 | 天津大学 | Wide-spectrum high-efficiency superconducting nanowire single photon detector |
| CN111579067B (en) * | 2020-05-22 | 2023-03-03 | 中国科学院上海技术物理研究所 | Integrated narrow-band light splitting device with ultra-wide band external cutoff |
| CN111579067A (en) * | 2020-05-22 | 2020-08-25 | 中国科学院上海技术物理研究所 | Integrated narrow-band light-splitting device with ultra-wide band out-cutoff |
| CN114485934A (en) * | 2020-11-13 | 2022-05-13 | 北京小米移动软件有限公司 | Light detection assembly, screen assembly and electronic terminal |
| CN114485934B (en) * | 2020-11-13 | 2024-01-30 | 北京小米移动软件有限公司 | Light detection assembly, screen assembly and electronic terminal |
| WO2022198736A1 (en) * | 2021-03-22 | 2022-09-29 | 南京微纳科技研究院有限公司 | Fabry-perot cavity array and spectrum detector |
| CN113161450A (en) * | 2021-04-25 | 2021-07-23 | 中国科学院长春光学精密机械与物理研究所 | Preparation method of integrated optical signal computing device |
| CN113465736A (en) * | 2021-06-30 | 2021-10-01 | 中国电子科技集团公司信息科学研究院 | On-chip integrated infrared detector |
| CN113465736B (en) * | 2021-06-30 | 2023-08-11 | 中国电子科技集团公司信息科学研究院 | On-chip integrated infrared detector |
| CN113670441A (en) * | 2021-08-11 | 2021-11-19 | 中国科学院光电技术研究所 | Long-wave infrared multispectral imaging device based on filter array and design method thereof |
| WO2023151614A1 (en) * | 2022-02-11 | 2023-08-17 | 中国科学院上海技术物理研究所 | Short-wave infrared spectrum detector and preparation method therefor |
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