CN104600102B - A kind of Sb/Si heterostructure semiconductors nano-crystal film and preparation method and application - Google Patents
A kind of Sb/Si heterostructure semiconductors nano-crystal film and preparation method and application Download PDFInfo
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- CN104600102B CN104600102B CN201410837859.8A CN201410837859A CN104600102B CN 104600102 B CN104600102 B CN 104600102B CN 201410837859 A CN201410837859 A CN 201410837859A CN 104600102 B CN104600102 B CN 104600102B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 239000002159 nanocrystal Substances 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 239000013078 crystal Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 4
- 239000000377 silicon dioxide Substances 0.000 claims abstract 2
- 239000007788 liquid Substances 0.000 claims description 14
- 239000002243 precursor Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical group OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 229940043237 diethanolamine Drugs 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 5
- 239000010409 thin film Substances 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000009466 transformation Effects 0.000 abstract description 6
- 230000000704 physical effect Effects 0.000 abstract description 2
- 239000000047 product Substances 0.000 abstract description 2
- 239000011265 semifinished product Substances 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 238000001291 vacuum drying Methods 0.000 description 6
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical compound Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001548 drop coating Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004471 energy level splitting Methods 0.000 description 2
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 206010054949 Metaplasia Diseases 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- UMRSVAKGZBVPKD-UHFFFAOYSA-N acetic acid;copper Chemical compound [Cu].CC(O)=O UMRSVAKGZBVPKD-UHFFFAOYSA-N 0.000 description 1
- DBJUEJCZPKMDPA-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O DBJUEJCZPKMDPA-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- HRHBQGBPZWNGHV-UHFFFAOYSA-N azane;bromomethane Chemical compound N.BrC HRHBQGBPZWNGHV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of Sb/Si heterostructure semiconductors nano-crystal film and preparation method and application, its method is on crystal silicon chip, un-densified nano-crystal film thick one layer of 10nm 100nm of growth, thermally treated nano-crystal film is firmly combined with battery plate illumination face, form heterojunction structure, this Sb/Si hetero-junctions easily forms n-type active layer at interface, with exclusive physical effect, the synergy processing of finished product and semi-finished product silica-based solar cell piece is can be applied to, the photoelectric transformation efficiency of crystal silicon battery can be significantly improved.The winged method technique of the present invention is simple, with low cost, energy-conserving and environment-protective, rapidly and efficiently, is adapted to industrialized production.
Description
Technical field
The present invention relates to photoelectric nano material and area of solar cell, specifically a kind of Sb/Si heterojunction structures are partly led
Body nano-crystal film and preparation method and application.
Background technology
Solar cell is a study hotspot of 21 century new energy field.In the solar cell of numerous types,
Crystal silicon solar batteries are most widely used that in the market.All the time, the main task of silicon solar cell is reduction
Cost and raising photoelectric transformation efficiency.The main path for reducing cost is cell foil and filming, to reduce the use of silicon,
Reduce the energy resource consumption in material consumption, and reduction battery manufacturing process.Deeply carried out around efficient research is proposed,
The theoretical conversion efficiency of crystal silicon solar batteries is up to 31%, and the highest transformation efficiency of Experimental report is 25%, and industrial metaplasia
The resultant battery efficiency of production only has 16%~17%.The one of the main reasons for restricting crystal silicon battery photoelectric transformation efficiency is crystal silicon material
Expect for indirect gap semiconductor it is not high to efficiency of light absorption, higher than crystal silicon bandgap (1.12eV) solar photon with " thermoelectron "
Form loss.And nanocrystalline and quanta point material and crystal silicon chip strong bonded with broad stopband, formation heterojunction structure can be with
Effectively widen spectral response of the crystalline silicon to sunshine.
Heterojunction structure, i.e., the combinations of materials of two kinds of different chemical compositions to together, it can not only play respective component
Functional characteristics, also produces new characteristic because of the combination of heterogeneity.The nano-crystal film and table of preparation are grown on crystal silicon chip
Face contact firmly forms heterojunction structure, can make oxide semiconductor energy level splitting, valence band hydridization；Increase visible absorption, not only
The excellent light capture ability of nano material is taken full advantage of, and the nano-crystal film with rough surface has sunken light efficiency well
Really, reflection of the sunshine on silicon chip surface is effectively reduced, absorption efficiency of the crystal silicon chip to sunshine is improved.In addition, utilizing
Nanocrystalline broad stopband characteristic absorbs more high-energy photons in short wavelength range and produces multiple exciton effect, generates as far as possible more
Many electron-hole pairs, while conductor oxidate/Si hetero-junctions can improve electron hole capture separated transmission efficiency, can be big
Width improves the quantum yield of crystal silicon chip.
The content of the invention
It is an object of the invention to provide a kind of preparation method of Sb/Si heterostructure semiconductors nano-crystal film and its should
With, on crystal silicon chip, un-densified nano-crystal film thick one layer of 10nm-100nm of growth.This Sb/Si hetero-junctions easily exists
Interface forms n-type active layer, with exclusive physical effect, is applied to crystal silicon battery, can significantly improve crystal silicon battery
Photoelectric transformation efficiency.This method technique is simple, with low cost, energy-conserving and environment-protective, rapidly and efficiently, is adapted to industrialized production.
The concrete technical scheme of the present invention：
A kind of preparation method of Sb/Si heterostructure semiconductors nano-crystal film, comprises the following steps：
1) preparation of precursor liquid：Prepare 0.0001~1mol/L source metal solution；Add 1 × 10-4~1 × 10-3mol/L
Grain growth accelerator；
2) preparation of film：Crystal silicon chip is immersed into 30-60s in precursor liquid, lifted with ＜ 1cm/s speed, drying, this is
One deposition growing cycle, so circulation 1-3 times；
3) it is heat-treated：100 DEG C~900 DEG C heat treatment 1-10min.
Described source metal is one kind in the organic or inorganic salt of antimony, copper, zinc, tin, lead, cadmium, iron, cobalt, nickel etc., preferably
Trichloride antimony.
Described grain growth accelerator can be diethanol amine, polyethylene glycol, polyvinylpyrrolidone, cetyl three
Methyl bromide ammonium, hexa, neopelex etc..
The crystal silicon chip is the semifinished or finished goods solar battery sheet of monocrystalline silicon, polysilicon, non-crystalline silicon or microcrystal silicon.
The method deposition growing nano-crystal films such as the impregnated lifting of cell piece, spin coating, drop coating, spraying, silk-screen printing, through heat
Processing nano-crystal film is firmly combined with battery plate illumination face, forms heterojunction structure.It can be applied to finished product and semi-finished product silicon substrate too
The synergy processing of positive energy cell piece.
The invention has advantages below：1. nano-crystal film homoepitaxial on crystal silicon chip, with crystal silicon chip rigid contact, shape
Into hetero-junctions.Thickness 10nm-100nm, uniform, controllable.2.Sb/Si heterojunction structures can make oxide semiconductor energy level splitting, valence band
Hydridization；Increase visible absorption.The characteristics of making full use of the wide brilliant absorption spectrum of heterogeneous structural nano, modulation energy gap, widens crystal silicon
The absorption spectrum ranges of piece, hence it is evident that improve efficiency of light absorption.3. utilize the brilliant quantum confined effect of heterogeneous structural nano and many excitons
Effect, is effectively increased the separation and capture of hot carrier, while improving electron hole capture separated transmission efficiency.Greatly improve crystalline substance
The quantum efficiency of silicon chip.4. above-mentioned nanocrystalline/Si hetero-junctions defects are few, with high electronics drift saturated velocity, current-carrying can be improved
The transmission speed and minority carrier life time of son.5. this Sb/Si hetero-junctions easily forms n-type active layer at interface, with exclusive thing
Effect is managed, is applied to crystal silicon battery, the photoelectric transformation efficiency of crystal silicon battery can be significantly improved.6. material preparation condition is simple
Single easy to operate, raw material inexpensive safety, manufacturing process is environment friendly and pollution-free, and production cost is low, it is adaptable to mass produce.
Brief description of the drawings
Fig. 1 is the crystal silicon chip FESEM cross-section images after the deposition growing nanometer film of embodiment 1.
Fig. 2 is the crystal silicon chip FESEM plane pictures after the deposition growing nanometer film of embodiment 1.
Fig. 3 is the crystal silicon chip after the deposition growing nanometer film of embodiment 1 and commercially available commercial movie, unprocessed print few sub- longevity
Order comparison diagram.
Fig. 4 is crystal silicon chip after the deposition growing nanometer film of embodiment 1 and unprocessed print absorption spectrum comparison diagram.
Fig. 5 is crystal silicon chip after the deposition growing nanometer film of embodiment 1 and unprocessed print reflectance spectrum comparison diagram.
Fig. 6 is crystal silicon chip after the deposition growing nanometer film of embodiment 1 and unprocessed print external quantum efficiency comparison diagram.
Embodiment
Technical scheme is further illustrated below in conjunction with specific embodiment, its purpose, which is only that, is best understood from this
The protection domain that the content of invention is not intended to limit the present invention.
Embodiment 1
The preparation method for the Sb/Si heterostructure semiconductor nano-crystal films that the present embodiment is provided, is comprised the following steps that：
A) using absolute ethyl alcohol as solvent, 0.02mol/L trichloride antimony solution is prepared, 2 × 10 are added-4Mol/L diethanols
Amine obtains precursor liquid.
B) crystal silicon chip piece is immersed into 60s in precursor liquid, is slowly lifted, slowly dried up with hair-dryer with 0.5cm/s speed,
This is a deposition growing cycle, so circulation 2 times.
C) using 150 DEG C of heat treatment 5min of vacuum drying chamber.
Embodiment 2
The preparation method of the present embodiment is same as Example 1, and difference is step a), prepares trichloride antimony solution dense
Spend for 0.01mol/L.
Embodiment 3
The preparation method of the present embodiment is same as Example 1, and difference is step a), prepares trichloride antimony solution dense
Spend for 0.10mol/L.
Embodiment 4
The preparation method of the present embodiment is same as Example 1, and difference is step a), prepares 0.05mol/L acetic acid
Copper solution.
Embodiment 5
The preparation method of the present embodiment is same as Example 1, and difference is step a), prepares 0.10mol/L acetic acid
Zinc solution.
Embodiment 6
The preparation method of the present embodiment is same as Example 1, and difference is step a), prepares 0.01mol/L tetrachloros
Change solution of tin.
Embodiment 7
The preparation method of the present embodiment is same as Example 1, and difference is step a), prepares 0.05mol/L trichlorines
Change antimony solution, add 5 × 10-4Mol/L cetyl trimethylammonium bromides.
Embodiment 8
The preparation method of the present embodiment is same as Example 1, and difference is step a), prepares 0.01mol/L trichlorines
Change antimony solution, be added without grain growth accelerator.
Embodiment 9
The preparation method of the present embodiment is same as Example 1, and difference is step b), using spin coating method by forerunner
Liquid is coated on battery plate illumination face：Precursor liquid is slowly equably dropped into battery plate illumination face, opened after behind solution impregnation surface
Spin coater is opened, rotating speed is 2000r/min, and rotational time is 30s；So it is a cycle, spin coating 3 times.
Embodiment 10
The preparation method of the present embodiment is same as Example 1, and difference is step b), using spraying method by forerunner
Liquid is coated on battery plate illumination face：Precursor liquid is equably sprayed onto battery plate illumination face via nozzle, until solution soaks completely
Moisten behind surface, be heat-treated 5min using vacuum drying chamber, be so a cycle, spray 2 times.
Embodiment 11
The preparation method of the present embodiment is same as Example 1, and difference is step b), using drop coating method by forerunner
Liquid is coated on battery plate illumination face：Precursor liquid is slowly equably dropped into battery plate illumination face, until solution complete wetting table
Behind face, 3min is heat-treated using vacuum drying chamber, is so a cycle, drop coating 3 times.
Embodiment 12
The preparation method of the present embodiment is same as Example 1, and difference is step b), using brushing method by forerunner
Liquid is coated on battery plate illumination face：By precursor liquid by the slow uniform scrubbing brush of banister brush to battery plate illumination face, until solution is complete
Behind full infiltration surface, 5min is heat-treated using vacuum drying chamber, is so a cycle, is brushed 3 times.
Embodiment 13
The preparation method of the present embodiment is same as Example 1, and difference is step c), uses vacuum drying chamber 100
DEG C heat treatment 10min.
Embodiment 14
The preparation method of the present embodiment is same as Example 1, and difference is step d), uses vacuum drying chamber 200
DEG C heat treatment 5min.
Embodiment 15
The preparation method of the present embodiment is same as Example 1, and difference is step d), uses 400 DEG C of heat of Muffle furnace
Handle 3min.
Claims (4)
1. a kind of preparation method of Sb/Si heterostructure semiconductors nano-crystal film, it is characterised in that comprise the following steps：
1) preparation of precursor liquid：Prepare 0.0001~1mol/L Sb3+Source metal solution；Add 1 × 10-4~1 × 10-2mol/L
Grain growth accelerator, the grain growth accelerator is diethanol amine or cetyl trimethylammonium bromide；
2) preparation of film：Crystal silicon chip is immersed into 10-60s in precursor liquid, lifted with ＜ 1cm/s speed, drying, this is one
Growth cycle, so circulation 1-3 times；
3) it is heat-treated：100 DEG C~900 DEG C heat treatment 1-10min.
2. the preparation method of Sb/Si heterostructure semiconductors nano-crystal film according to claim 1, it is characterised in that
Crystal silicon chip is monocrystalline silicon, polysilicon, non-crystalline silicon or crystallite silicon chip.
3. prepared by a kind of Sb/Si heterostructure semiconductors nano-crystal film, method according to claim 1 or 2, its feature
It is, nano-crystalline thin film thickness is 10nm-100nm, uniformly.
4. Sb/Si heterostructure semiconductors nano-crystal film described in claim 3 is used at the synergy of silica-based solar cell piece
Reason.
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| CN201410837859.8A CN104600102B (en) | 2014-12-24 | 2014-12-24 | A kind of Sb/Si heterostructure semiconductors nano-crystal film and preparation method and application |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6159620A (en) * | 1997-03-31 | 2000-12-12 | The Regents Of The University Of California | Single-electron solid state electronic device |
| CN101122006A (en) * | 2006-08-10 | 2008-02-13 | 中国科学院微电子研究所 | Method for preparing metal nano-crystal thin film |
| CN101279374A (en) * | 2008-01-14 | 2008-10-08 | 重庆大学 | Method for preparing metallic simple substance nano-crystal material |
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2014
- 2014-12-24 CN CN201410837859.8A patent/CN104600102B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6159620A (en) * | 1997-03-31 | 2000-12-12 | The Regents Of The University Of California | Single-electron solid state electronic device |
| CN101122006A (en) * | 2006-08-10 | 2008-02-13 | 中国科学院微电子研究所 | Method for preparing metal nano-crystal thin film |
| CN101279374A (en) * | 2008-01-14 | 2008-10-08 | 重庆大学 | Method for preparing metallic simple substance nano-crystal material |
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