CN104766893A - Thin film transistor and manufacturing method thereof - Google Patents
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- CN104766893A CN104766893A CN201510184202.0A CN201510184202A CN104766893A CN 104766893 A CN104766893 A CN 104766893A CN 201510184202 A CN201510184202 A CN 201510184202A CN 104766893 A CN104766893 A CN 104766893A
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- 239000010409 thin film Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 239000000463 material Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000009413 insulation Methods 0.000 claims abstract description 14
- 238000004528 spin coating Methods 0.000 claims description 22
- 239000002131 composite material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000010944 silver (metal) Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 229910021432 inorganic complex Inorganic materials 0.000 abstract 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- QPBYLOWPSRZOFX-UHFFFAOYSA-J tin(iv) iodide Chemical compound I[Sn](I)(I)I QPBYLOWPSRZOFX-UHFFFAOYSA-J 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- BAVYZALUXZFZLV-UHFFFAOYSA-N mono-methylamine Natural products NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
A thin film transistor is formed by overlapping a substrate, a gate electrode, a gate insulation layer, an active channel layer and a source-drain electrode, wherein the active channel layer is an organic/inorganic complex perovskite thin film, the thickness of a thin film of the gate electrode is 1 micrometer, the thickness of a thin film of the gate insulation layer ranges from 200 nanometers to 400 nanometers, the thickness of the thin film of the active channel layer ranges from 200 nanometers to 300 nanometers, and the thickness of a thin film of the source-drain electrode is 1 micrometer. The thin film transistor has the advantages that organic/inorganic complex perovskite materials are used for the active channel layer of the thin film transistor, the advantage of high mobility of an inorganic semiconductor and the advantages of flexibility, cheapness and simple low-temperature manufacturing of an organic semiconductor are combined, and therefore the thin film transistor has higher drive capability than an organic thin film transistor and has the capacity of being simple, low in cost and likely to be manufactured on a flexible substrate in a large-area mode; a manufacturing method of the thin film transistor is simple to implement and beneficial to industrialized application.
Description
Technical field
The present invention relates to the technology of preparing of thin-film transistor, be specifically related to a kind of thin-film transistor and preparation method thereof.
Background technology
Thin-film transistor (Thing Film Transistor (TFT)) is widely used in fields such as flat panel display, Electronic Paper, transducer, smart cards.By the difference of its active channel layer material, thin-film transistor comprises inorganic thin-film transistors and the large class of OTFT two.Inorganic thin-film transistors has good device performance, but its preparation technology comparatively organically complicated, cost is higher, pliability is not good and generally need the preparation of experience high temperature, to meet at present fast-developing low cost, ultra-thin large area flexible electronic device need great difficulty, such as flexible flat panel display device, wearable device, biomedical transducer etc.Compared with inorganic thin-film transistors, OTFT has its peculiar advantage: 1) manufacturing process is simple, can adopt the method for spin coating, printing and vacuum evaporation, therefore cost is low, and can at room temperature process, this makes it can be deposited directly in plastic; 2) pliability is good, and carry out the distortion or bending of appropriateness, the photoelectric characteristic of device does not change significantly; 3) scope of material is wide; 4) transparency is good.Therefore, OTFT needing low cost, the field of ultra-thin, large-area flexible electronic device has a wide range of applications, and causes the attention of increasing famous major company and scientific research institution.But its low carrier mobility (being generally less than 1cm2/Vs) is a difficult problem for organic tft always.At present, report that the mobility of monocrystalline OTFT can reach 5cm2/Vs-10cm2/Vs though have, realize very difficult, also rarely found.The mobility that organic semiconductor is low makes it be difficult to meet the driving requirement of high speed device, seriously constrains the application in high performance electronics.Therefore, just a kind of driving that can meet high performance device as inorganic TFT is needed to require and have concurrently simultaneously New Type Field effect material and the thin-film transistor thereof of large area preparative capacibility in organic tft low cost flexible substrate.In recent years, some organic/inorganic composite perovskite material, such as lead iodide methylamine etc. have obtained and have well applied and achieve develop rapidly in solar cell.Organic/inorganic composite perovskite solar cell was in the news in first time in 2009, and efficiency at that time only has 3.8%, but hoisting velocity rises sharply subsequently, and latest report is more than 20%.Its development at full speed will give the credit to the light absorbent of the core-organic/inorganic composite perofskite type of this solar cell, and this material is generally organic metal halide such as lead iodide methylamine and the stannic iodide methylamine etc. with perovskite crystal formation.In this perovskite ABX3 structure, A is methylamino, and B is metallic atom (being generally lead and tin), and X is the halogen atoms such as chlorine, bromine, iodine.
Probe into the reason why this organic/inorganic composite perofskite type solar cell can obtain superperformance, be that this organic/inorganic composite perovskite material can realize the absorption to visible ray and part near infrared light on the one hand, improve absorptivity, another prior reason is: this organic/inorganic composite perovskite material has the longer carrier diffusion length reaching 1 μm, more much bigger than organic semiconductor (10-80nm).Even more noteworthy, its hole and electronics have close diffusion length, therefore, the quick separating of photo-generated carrier will reduce compound, energy loss is little, can not produce space charge restriction photoelectric current, this just organic/inorganic composite perofskite type solar cell can realize high efficiency major reason.By showing the research of some perovskite material Mobility measurements in the recent period, it has the Hall mobility be close to up to tens to up to a hundred centimetres side/webers, and these performances are just required for high performance thin film transistor active channel layer.Still think, this organic/inorganic composite perovskite material being applicable to solar cell should also can be the high-performance active channel material required for high performance thin film transistor.
Organic/inorganic composite perofskite material is used for the channel layer in thin-film transistor by the present invention, utilizes its inorganic constituents to form the basic framework of mixture to provide the charge carrier of high mobility by strong covalent bond or ionic bond interaction; Organic principle then makes this material have molecular self-assembling ability, at room temperature can dissolve as polymeric material, simultaneously also for the free movement of charge carrier provides molecular orbit.Therefore, the thin-film transistor of this novel organic/inorganic composite perofskite raceway groove should both have higher carrier mobility, simple with spin coating, printing, vacuum evaporation etc., low cost, low temperature mode can prepare as OTFT again, thus possess large-area direct preparative capacibility in flexible substrate.This novel thin-film transistor will have broad application prospects in flat panel display, transducer, smart card and flexible electronic device.
Summary of the invention
The object of the invention is for above-mentioned existing problems, a kind of thin-film transistor and preparation method thereof is provided, this thin-film transistor with organic/inorganic composite perofskite film for active channel layer, there is higher carrier mobility, simple with spin coating, printing, vacuum evaporation etc., low cost, low temperature mode can prepare as OTFT again, thus possess large-area direct preparative capacibility in flexible substrate.
Technical scheme of the present invention:
A kind of thin-film transistor, superposed by substrate, gate electrode, gate insulation layer, active channel layer and source-drain electrode and form, wherein active channel layer is organic/inorganic composite perofskite film, and the thickness of each layer film is: gate electrode 1 μm, gate insulation layer 200-400nm, active channel layer 200-300nm, source-drain electrode 1 μm.
A preparation method for described thin-film transistor, step is as follows:
1) adopt the direct vapour deposition method of mask plate, evaporation on substrate after, litho pattern method, spin-coating method or print process prepare gate electrode;
2) on the above-mentioned substrate preparing gate electrode, adopt spin-coating method to prepare gate insulation layer, spincoating conditions is: 2000-4000r/min, 30-40s, and then anneal 1-3 hour at 50-100 DEG C of temperature;
3) on gate insulation layer, adopt spin-coating method spin coating organic/inorganic composite perofskite film as active channel layer, spincoating conditions is: 3000-6000r/min, 25-40s, and then anneal 45-90min at 50-100 DEG C of temperature;
4) on above-mentioned active channel layer, source-drain electrode is prepared.
Described substrate is glass or monocrystalline silicon piece; Gate electrode is ITO or FTO; Gate insulator layer material is silicon nitride, silica, polyvinylpyrrolidone, polymethyl methacrylate or polyvinyl alcohol; Active channel layer is CH
3nH
3pbI
3, CH
3nH
3pbI
3 – xcl
xor CH
3nH
3snI
3; Source-drain electrode is gold, aluminium or Ag films.
By organic/inorganic composite perofskite materials application in thin film transistor channel layer, by the design of device architecture, technological process, expect to obtain a kind ofly can meet high speed device and drive the high performance thin film transistor required, possess again the direct preparative capacibility of large area in simple, low cost and flexible substrate simultaneously.This novel thin-film transistor will have broad application prospects in flat panel display, transducer, smart card and flexible electronic device.
Advantage of the present invention is: organic/inorganic composite perofskite material is used for the active channel layer of thin-film transistor by this thin-film transistor, the high mobility and the organic semi-conductor that combine inorganic semiconductor are pliable and tough, cheap, low temperature such as easily to prepare at the advantage, both there is the driving force higher than OTFT, had again simple, low cost concurrently simultaneously and be easy to ability prepared by large area on flexible substrates; Its preparation method is simple, is conducive to industrial applications.
Accompanying drawing explanation
Fig. 1 is CH
3nH
3pbI
3the XRD figure of film.
Fig. 2 is the CH of preparation
3nH
3pbI
3for the transfer characteristic curve (Vds=-5v and Vds=-20v) of the thin-film transistor of channel layer.
Embodiment
Below in conjunction with example, preparation method of the present invention and products application are described in detail.
Embodiment:
A kind of thin-film transistor, superposed by substrate, gate electrode, gate insulation layer, active channel layer and source-drain electrode and form, wherein active channel layer is organic/inorganic composite perofskite film, and the thickness of each layer film is: gate electrode 1 μm, gate insulation layer 260nm, active channel layer 200nm, source-drain electrode 1 μm; Its preparation process is as follows:
1) adopt the direct vapour deposition method of mask plate to prepare ITO gate electrode on a glass substrate, process conditions are: pressure 1 × 10
-3pa, electric current 100mA, evaporation time 10min;
2) in the above-mentioned glass substrate preparing gate electrode, adopt spin-coating method to prepare PMMA gate insulation layer, spincoating conditions is: revolution 2000r/min, spin-coating time 30s, then anneals 1 hour at 100 DEG C of temperature;
3) on gate insulation layer, adopt spin-coating method spin coating CH
3nH
3pbI
3film is as active channel layer, and spincoating conditions is: revolution 3000r/min, spin-coating time 25s, then anneals 1 hour at 100 DEG C of temperature;
Fig. 1 is CH
3nH
3pbI
3the XRD figure of film, obvious crystallization peak has been there is as seen in figure, and respectively in 2 θ=13.98 °, 28.32 °, 31.74 ° places are corresponding occurs (110), (220) and (310) three main crystal orientation, show the tetragonal crystal perovskite structure of material and good crystallization situation, tentatively prepare CH
3nH
3pbI
3the TFT device of channel layer;
4) on above-mentioned active channel layer, adopt mask plate vacuum evaporation silver, vacuum evaporation condition is: pressure 1 × 10
-3pa, electric current 100mA, evaporation 10min prepare source-drain electrode.
Fig. 2 is the CH of preparation
3nH
3pbI
3for the transfer characteristic curve (Vds=-5v and Vds=-20v) of the thin-film transistor of channel layer, show in figure: channel current increases with executing biased increase and is tending towards saturated, and during Vds=-5V, cut-in voltage is about-0.5V, and on-off ratio is 10
4, demonstrate obvious field effect feature.
Claims (3)
1. a thin-film transistor, it is characterized in that: superposed by substrate, gate electrode, gate insulation layer, active channel layer and source-drain electrode and form, wherein active channel layer is organic/inorganic composite perofskite film, and the thickness of each layer film is: gate electrode 1 μm, gate insulation layer 200-400nm, active channel layer 200-300nm, source-drain electrode 1 μm.
2. a preparation method for thin-film transistor as claimed in claim 1, is characterized in that step is as follows:
1) adopt the direct vapour deposition method of mask plate, evaporation on substrate after, litho pattern method, spin-coating method or print process prepare gate electrode;
2) on the above-mentioned substrate preparing gate electrode, adopt spin-coating method to prepare gate insulation layer, spincoating conditions is: 2000-4000r/min, 30-40s, and then anneal 1-3 hour at 50-100 DEG C of temperature;
3) on gate insulation layer, adopt spin-coating method spin coating organic/inorganic composite perofskite film as active channel layer, spincoating conditions is: 3000-6000r/min, 25-40s, and then anneal 45-90min at 50-100 DEG C of temperature;
4) on above-mentioned active channel layer, source-drain electrode is prepared.
3. the preparation method of thin-film transistor described in claim 2, is characterized in that: described substrate is glass or monocrystalline silicon piece; Gate electrode is ITO or FTO; Gate insulator layer material is silicon nitride, silica, polyvinylpyrrolidone, polymethyl methacrylate or polyvinyl alcohol; Active channel layer is CH
3nH
3pbI
3, CH
3nH
3pbI
3 – xcl
xor CH
3nH
3snI
3; Source-drain electrode is gold, aluminium or Ag films.
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|---|---|---|---|
| CN201510184202.0A CN104766893B (en) | 2015-04-17 | 2015-04-17 | A kind of thin film transistor (TFT) and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510184202.0A CN104766893B (en) | 2015-04-17 | 2015-04-17 | A kind of thin film transistor (TFT) and preparation method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108023019A (en) * | 2017-12-19 | 2018-05-11 | 北京大学深圳研究生院 | A kind of perovskite phototransistor and preparation method thereof |
| CN108807672A (en) * | 2017-04-28 | 2018-11-13 | 清华大学 | Organic Thin Film Transistors and preparation method thereof |
| CN109767989A (en) * | 2018-12-25 | 2019-05-17 | 西交利物浦大学 | Thin film transistor (TFT) of flexible substrate and preparation method thereof |
| CN109962113A (en) * | 2019-03-28 | 2019-07-02 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT), array substrate and preparation method thereof and display panel |
| CN113130767A (en) * | 2021-04-16 | 2021-07-16 | 南开大学 | Mixed-dimension composite perovskite thin film, preparation method and application thereof, and photosensitive thin film transistor |
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2015
- 2015-04-17 CN CN201510184202.0A patent/CN104766893B/en not_active Expired - Fee Related
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| US6344662B1 (en) * | 1997-03-25 | 2002-02-05 | International Business Machines Corporation | Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages |
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|---|
| C.R.KAGAN ET AL.: "Organic-Inorganic Hybrid Materials as Semiconducting Channels in Thin-Film Field-Effect Transistors", 《SCIENCE》 * |
Cited By (7)
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| CN108807672B (en) * | 2017-04-28 | 2020-03-17 | 清华大学 | Organic thin film transistor and method for manufacturing the same |
| CN108023019A (en) * | 2017-12-19 | 2018-05-11 | 北京大学深圳研究生院 | A kind of perovskite phototransistor and preparation method thereof |
| CN108023019B (en) * | 2017-12-19 | 2024-01-02 | 北京大学深圳研究生院 | Perovskite phototransistor and preparation method thereof |
| CN109767989A (en) * | 2018-12-25 | 2019-05-17 | 西交利物浦大学 | Thin film transistor (TFT) of flexible substrate and preparation method thereof |
| CN109962113A (en) * | 2019-03-28 | 2019-07-02 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT), array substrate and preparation method thereof and display panel |
| CN113130767A (en) * | 2021-04-16 | 2021-07-16 | 南开大学 | Mixed-dimension composite perovskite thin film, preparation method and application thereof, and photosensitive thin film transistor |
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| CN104766893B (en) | 2018-11-30 |
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