CN104934410A - MOM capacitor and capacitance adjusting method - Google Patents
MOM capacitor and capacitance adjusting method Download PDFInfo
- Publication number
- CN104934410A CN104934410A CN201510237651.7A CN201510237651A CN104934410A CN 104934410 A CN104934410 A CN 104934410A CN 201510237651 A CN201510237651 A CN 201510237651A CN 104934410 A CN104934410 A CN 104934410A
- Authority
- CN
- China
- Prior art keywords
- electrode
- interdigital
- metal level
- positive
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention relates to the capacitor field, and especially relates to a MOM capacitor and a capacitance adjusting method; a first electrode and a second electrode of each metal layer are connected with a voltage switch; positive and negative polarities of voltage implemented by the voltage switch and applied to the first and second electrodes of each metal layer can be controlled, so the positive and negative polarities of a first electrode interdigital connected with one side of the first electrode and a second electrode interdigital connected with one side of the second electrode can be changed, and positive and negative polarities of each electrode interdigital in a row direction can be alternately arranged at intervals, positive and negative polarities of each electrode interdigital in a column direction can be mixedly arranged, thus finely adjusting the capacitance of the MOM capacitor. The method saves capacitance adjusting cost, so difference between an adjusted capacitance value of the MOM capacitor and a target value is smaller than 5%, and a simulation circuit can be more accurate.
Description
Technical field
The present invention relates to capacitor area, particularly relate to a kind of MOM capacitor and electric capacity method of adjustment.
Background technology
Capacitor is the important composition unit in integrated circuit, is widely used in various chip.Along with the continuous progress of semiconductor integrated circuit manufacturing technology, the performance of semiconductor device also constantly promotes.In integrated circuit integrated level lifting process, how the electric capacity of control capacitor becomes an important problem with control simulation circuit accurately.
In chip production process, the change of the capacitance of MOM (metal-oxide-metal) capacitor is limited within 10%.But this still optimizes the Analog Circuit Design of the capacitance of the MOM capacitor that a certain needs more accurately control not.
A kind of method of the capacitance in chip-scale intense adjustment MOM capacitor of low cost is not had in prior art.Capacitance adjustment uses fuse or OTP programmed method, adds the complexity of process and chip size and cost.
There is the transverse magnetic flux BEOL capacitor of multi-level metal interconnect layer, be widely used in CMOS technology field because of metal connecting line (interconnect) capacitor and MOM capacitor as highdensity " freely " capacitor.It is identical and become the interdigital alternating polarity in vertical direction of metal two kinds of structures of comb teeth-shaped arrangement that the structure of existing MOM capacitor comprises into the interdigital polarity in vertical direction of metal of comb teeth-shaped arrangement.Wherein, to be interdigitally all in intensive dielectric layer.
The control of traditional MOM capacitor is by controlling the technological parameter of interconnection, and as metal line-width, line space, attribute of medal polish (depression), intermetallic Distance geometry dielectric layer etc. realizes.But the capacitance that these methods all can only control MOM capacitor changes in the scope of 10%, and cannot realize meticulousr adjustment.
Summary of the invention
In view of the above problems, the invention provides a kind of method of capacitance of intense adjustment MOM capacitor of low cost, the capacitance of MOM capacitor is differed with desired value and is less than 5%, need in the accurate analog circuit controlled to be used in.
The present invention solves the problems of the technologies described above adopted technical scheme:
A kind of MOM capacitor is provided, it is characterized in that, comprising:
The metal level of the mutual parallel stacked of multilayer, and include in every layer of described metal level the first electrode, respectively, second electrode interdigital with some first electrodes of this first Electrode connection and
Interdigital with some second electrodes of this second Electrode connection respectively;
Insulating medium layer, described metal level all embeds and is arranged in this insulating medium layer, all to be isolated between the first electrode between each described metal level, in same described metal level and the second electrode;
Voltage switchgear, respectively with described first electrode in every layer of metal level and described second Electrode connection;
Wherein, described voltage switchgear is utilized to adjust the positive-negative polarity of each described first electrode and/or each described second electrode, to adjust the capacitance of described capacitor.
Preferably, above-mentioned MOM capacitor, wherein, in every layer of described metal level, described first electrode and the second electrode runs parallel are arranged.
Preferably, above-mentioned MOM capacitor, wherein, in every layer of described metal level, the interdigital one-tenth comb teeth-shaped of each described first electrode is arranged in the first electrode side, and the second electrode interdigital one-tenth comb teeth-shaped is arranged in described second electrode side.
Preferably, above-mentioned MOM capacitor, wherein, in every layer of described metal level, the positive-negative polarity of described first electrode and the second electrode is contrary.
Preferably, above-mentioned MOM capacitor, wherein, in every layer of described metal level, the interdigital positive-negative polarity of described first electrode is consistent with the first electrode, and the interdigital positive-negative polarity of described second electrode is consistent with the second electrode.
Preferably, above-mentioned MOM capacitor, wherein, in every layer of described metal level, the interdigital alternate intervals of interdigital and described second electrode of described first electrode arranges.
Preferably, above-mentioned MOM capacitor, wherein, the electric capacity of described MOM capacitor comprise interdigital and the second electrode of the first electrode of the arrangement of positive-negative polarity alternate intervals in every layer of described metal level interdigital between interdigital and the second electrode of the first electrode of the different adjacent two layers metal level of electric capacity, positive-negative polarity interdigital between electric capacity and edge capacitance.
The present invention also provides a kind of electric capacity method of adjustment, and for adjusting the electric capacity of above-mentioned MOM capacitor, described method comprises:
According to process requirements, transmit control signal to described voltage switchgear, with the positive-negative polarity of the positive-negative polarity and each described second electrode that control each described first electrode be connected with described voltage switchgear;
Wherein, control first electrode of every layer and the second polarity of electrode is contrary, interdigital with the first electrode of described first Electrode connection and contrary with the interdigital polarity of the second electrode of described second Electrode connection with alternate intervals arrangement in realizing every layer.
Preferably, above-mentioned electric capacity method of adjustment, wherein, by controlling described voltage switchgear, to be applied to described first polarity of electrode of each layer identical or different, and corresponding second polarity of electrode is identical or different, adjusts the electric capacity of described MOM capacitor.
Preferably, above-mentioned electric capacity method of adjustment, wherein, the electric capacity Adjustment precision of described MOM capacitor differs with desired value and is less than 5%.
Technique scheme tool has the following advantages or beneficial effect: MOM capacitor provided by the invention and electric capacity method of adjustment, be applied to the positive-negative polarity of the first electrode of every layer of metal level and the voltage of the second electrode by control voltage switching device, adjust the electric capacity of MOM capacitor.The method saves electric capacity Setup Cost, and the capacitance that can realize adjusting rear MOM capacitor differs with desired value and is less than 5%, to make analog circuit more accurate.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, the present invention and feature, profile and advantage will become more apparent.Mark identical in whole accompanying drawing indicates identical part.Proportionally can not draw accompanying drawing, focus on purport of the present invention is shown.
Fig. 1 is the structural representation of a kind of MOM capacitor of the present invention;
Fig. 2 is the schematic diagram of voltage switchgear of the present invention and Electrode connection;
Fig. 3-Fig. 5 is applied to the different positive-negative polarity of the electrode of MOM capacitor to adjust the schematic diagram of electric capacity in the present invention's three embodiments.
Embodiment
With reference to Fig. 1, a kind of MOM capacitor provided by the invention, comprises more metal layers M1-M5 (indicate 5 layers in figure, actual layer number can be determined according to concrete process requirements, and the present invention is not restricted this).Every layer of metal level includes one first electrode and one second electrode, namely the M1 of metal level shown in figure comprises the first electrode 11 and the second electrode 12, metal level M2 comprises the first electrode 21 and the second electrode 22, by that analogy, metal level M3 comprises the first electrode 31 and the second electrode 32, metal level M4 comprises the first electrode 41 and the second electrode 42, and metal level M5 comprises the first electrode 51 and the second electrode 52.The first electrode each first electrode being connected with some arrangements in comb teeth-shaped is interdigital, the second electrode each second electrode being connected with some arrangements in comb teeth-shaped is interdigital, namely to be connected with several first electrodes interdigital in first electrode 11 side of the M1 of the first metal layer shown in figure, be denoted as 110 respectively, 111, 112, it is interdigital that second electrode 12 side of the first metal layer M1 is connected with several second electrodes, be denoted as 120 respectively, 121 (for convenience of showing, in figure, every layer only indicates three the first electrode is interdigital and two the second electrodes are interdigital, actual can be interdigital and the second electrode is interdigital according to multiple first electrode of concrete process requirements setting, the present invention is not restricted this), by that analogy, the first electrode that first electrode 21 side of the second metal level M2 is connected with some arrangements in comb teeth-shaped is equally interdigital, and the second electrode that the second electrode 22 side is connected with some arrangements in comb teeth-shaped is interdigital, repeats no more herein.
Wherein, in every one deck, for the first metal layer M1, first electrode 11 and the second electrode 12 be arranged in parallel, same the first electrode interdigital 110,111 and 112 being connected to the first electrode 11 side and the second electrode interdigital 120 and 121 being connected to the second electrode 12 side also all be arranged in parallel, that is within the same layer, interdigital, the second electrode of the first electrode, the first electrode and the second electrode is interdigital is all in same level.Meanwhile, the interdigital arrangement in comb teeth-shaped alternate intervals of interdigital and the second electrode of the first electrode.The arrangement of other metal levels, with reference to the first metal layer M1, repeats no more herein.
In whole MOM capacitor space, even dense distribution dielectric (not indicating in figure), with by each metal level, each first electrode, the second electrode and each electrode is interdigital all keeps apart.
With reference to Fig. 2, first electrode of every one deck is all connected (for convenience of showing with voltage switchgear 6 with the second electrode, first electrode 11 of the first metal layer M1 and the connection diagram of the second electrode 12 and voltage switchgear 6 is only indicated in figure, in practice, first electrode of every one deck is all connected with this voltage switchgear 6 with the second electrode, or needing to adjust first electrode of certain one deck and the polarity chron of the second electrode and to be connected to by this voltage switchgear 6 first electrode and second electrode of this layer, reality can change flexibly according to concrete technology demand, the present invention is not restricted this), voltage switchgear 6 is according to the control signal (ControlSignal received, CS is denoted as in figure) control to be applied to the positive-negative polarity (V-or V+) of first electrode of every one deck and the voltage of the second electrode, the electric capacity of MOM capacitor is adjusted with this.
Wherein, in every one deck metal level, same for the first metal layer M1, first electrode 11 is contrary with the polarity of the second electrode 12, the polarity that the first electrode is interdigital and the second electrode is interdigital arranged to make alternate intervals is contrary, is also even supplied to the first electrode 11 positive voltage, is supplied to the second electrode 12 negative voltage accordingly, then left side the first electrode interdigital 110 sees from figure, the interdigital positive-negative polarity of electrode is respectively: positive and negative, positive and negative, positive and negative ...Arranging like this can make MOM capacitor hold a basic capacitance (electric capacity between interdigital from adjacent electrode each in same layer metal level).Subsequently through the polarity of the first electrode and the polarity of the second electrode on change longitudinal direction, can realize adjusting accurately the electric capacity of MOM capacitor.
Below in conjunction with accompanying drawing and specific embodiment, electric capacity method of adjustment of the present invention is further described, but not as limiting to the invention.
Embodiment one:
As shown in Figure 3, be applied to first electrode 11 positive voltage of the first metal layer M1, the second electrode 12 negative voltage, the interdigital positive-negative polarity of each electrode of the first metal layer M1 from left to right shown as in the drawings positive and negative, positive and negative, just.Be applied to first electrode 21 negative voltage of the second metal level M2, the second electrode 22 positive voltage, make the interdigital positive-negative polarity of each electrode of the second metal level M2 from left to right show as negative, positive, negative, positive, negative in the drawings.Be applied to first electrode 31 positive voltage of the 3rd metal level M3, the second electrode 32 negative voltage, the interdigital positive-negative polarity of each electrode of the 3rd metal level M3 from left to right shown as in the drawings positive and negative, positive and negative, just.By that analogy, the positive-negative polarity that on line direction, each electrode is interdigital is alternately arranged, the positive-negative polarity that on column direction, each electrode is interdigital simultaneously is also alternately arranged, also each first electrode is namely applied in vertical direction with the voltage of the opposed polarity of alternate intervals, first electrode of every one deck is different with the polarity of voltage of the second electrode simultaneously, can realize the positive-negative polarity that on line direction, each electrode is interdigital to be alternately arranged, the positive-negative polarity that simultaneously on column direction, each electrode is interdigital is also alternately arranged this effect.
In the MOM capacitor of the present embodiment, total electric capacity (C total) come from each adjacent electrode in identical metal level interdigital between lateral capacitance Cl and adjacent metal level in each electrode interdigital between longitudinal electric capacity Cv and some edge capacitances (fringes).Also namely the computing formula of total capacitance C total is: C total=4x5xCl+4x5xCv+fringes=20Cl+20Cv+fringes.The relative capacity of the present embodiment is 1, namely identical with desired value.
Embodiment two:
As shown in Figure 4, be applied to first electrode 11 positive voltage of the first metal layer M1, the second electrode 12 negative voltage, the interdigital positive-negative polarity of each electrode of the first metal layer M1 from left to right shown as in the drawings positive and negative, positive and negative, just.Be applied to first electrode 21 positive voltage of the second metal level M2, the second electrode 22 negative voltage, the interdigital positive-negative polarity of each electrode of the second metal level M2 from left to right shown as in the drawings positive and negative, positive and negative, just.Be applied to first electrode 31 positive voltage of the 3rd metal level M3, the second electrode 32 negative voltage, the interdigital positive-negative polarity of each electrode of the 3rd metal level M3 from left to right shown as in the drawings positive and negative, positive and negative, just.By that analogy, the positive-negative polarity that on line direction, each electrode is interdigital is alternately arranged, the polarity that on column direction, each electrode is interdigital is all identical, also each first electrode is namely applied in vertical direction with the voltage of identical polar, and the first electrode being applied to every one deck is different with the polarity of voltage of the second electrode, the positive-negative polarity that on line direction, each electrode is interdigital can be realized be alternately arranged, the polarity that on column direction, each electrode is interdigital this effect identical.
Different from embodiment one, in the MOM capacitor of the present embodiment, total electric capacity (C total) only come from each adjacent electrode in identical metal level interdigital between lateral capacitance Cl and some edge capacitances (fringes).Also namely the computing formula of total capacitance C total is: Ctotal=4x5xCl+fringes=20Cl+fringes.The relative capacity of the present embodiment is 0.92, namely differs 8% with desired value.
Embodiment three:
As shown in Figure 5, be applied to first electrode 11 positive voltage of the first metal layer M1, the second electrode 12 negative voltage, the interdigital positive-negative polarity of each electrode of the first metal layer M1 from left to right shown as in the drawings positive and negative, positive and negative, just.Be applied to first electrode 21 negative voltage of the second metal level M2, the second electrode 22 positive voltage, make the interdigital positive-negative polarity of each electrode of the second metal level M2 from left to right show as negative, positive, negative, positive, negative in the drawings.Be applied to first electrode 31 positive voltage of the 3rd metal level M3, the second electrode 32 negative voltage, the interdigital positive-negative polarity of each electrode of the 3rd metal level M3 from left to right shown as in the drawings positive and negative, positive and negative, just.Be applied to first electrode 41 positive voltage of the 4th metal level M4, the second electrode 42 negative voltage, the interdigital positive-negative polarity of each electrode of the 4th metal level M4 from left to right shown as in the drawings positive and negative, positive and negative, just.Be applied to first electrode 51 positive voltage of the 5th metal level M5, the second electrode 52 negative voltage, the interdigital positive-negative polarity of each electrode of the 5th metal level M5 from left to right shown as in the drawings positive and negative, positive and negative, just.Thus the positive-negative polarity that on line direction, each electrode is interdigital is alternately arranged, the mixing of polarity that on column direction, each electrode is interdigital intersects (also i.e. not necessarily positive and negative intersection, can be positive and negative just, the positive and negative various ways such as negative, negative just positive and negative).
In the MOM capacitor of the present embodiment, total electric capacity (C total) come from each adjacent electrode in identical metal level interdigital between the lateral capacitance Cl adjacent metal level different with bipolarity in electrode interdigital between longitudinal electric capacity Cv and some edge capacitances (fringes).Also namely the computing formula of total capacitance C total is: C total=4x5xCl+5x2xCv+fringes=20Cl+10Cv+fringes.The relative capacity of the present embodiment is 0.955, namely differs 4.5% with desired value.
Known by these three embodiments, by the positive-negative polarity of the electrode voltage between adjustment different metal layer, make the positive-negative polarity mixed distribution that vertical direction top electrode is interdigital, can realize capacitance with desired value meticulous change in the scope of 5%.
In another preferred embodiment of the present invention, obtain high capacitance by adjustment minimum spacing (width+spacing that electrode is interdigital).The accurate difference of MOM capacitor also depends on the number that the area of capacitor is interdigital with the electrode forming capacitor.
The fine setting meticulousr to the electric capacity of MOM capacitor by using more metal level (such as 8 grades of metals), and can realize (reference example three) by applying more change in the connection of mixing polarity.Therefore not to repeat here in the present invention.
In sum, the invention discloses a kind of MOM capacitor and electric capacity method of adjustment, be applied to the first electrode of every layer of metal level and the voltage of the second electrode by control voltage switching device, adjust the electric capacity of MOM capacitor.The method saves electric capacity Setup Cost, and the capacitance that can realize adjusting rear MOM capacitor differs with desired value and is less than 5%, to make analog circuit more accurate.
It should be appreciated by those skilled in the art that those skilled in the art are realizing described change case in conjunction with prior art and above-described embodiment, do not repeat at this.Such change case does not affect flesh and blood of the present invention, does not repeat them here.
Above preferred embodiment of the present invention is described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, the equipment wherein do not described in detail to the greatest extent and structure are construed as to be implemented with the common mode in this area; Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or being revised as the Equivalent embodiments of equivalent variations, this does not affect flesh and blood of the present invention.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (10)
1. a MOM capacitor, is characterized in that, comprising:
The metal level of the mutual parallel stacked of multilayer, and include in every layer of described metal level the first electrode, respectively, second electrode interdigital with some first electrodes of this first Electrode connection and
Interdigital with some second electrodes of this second Electrode connection respectively;
Insulating medium layer, described metal level all embeds and is arranged in this insulating medium layer, all to be isolated between the first electrode between each described metal level, in same described metal level and the second electrode;
Voltage switchgear, respectively with described first electrode in every layer of metal level and described second Electrode connection;
Wherein, described voltage switchgear is utilized to adjust the positive-negative polarity of each described first electrode and/or each described second electrode, to adjust the capacitance of described capacitor.
2. MOM capacitor according to claim 1, is characterized in that, in every layer of described metal level, described first electrode and described second electrode runs parallel are arranged.
3. MOM capacitor according to claim 1, is characterized in that, in every layer of described metal level, each described first electrode interdigital one-tenth comb teeth-shaped is arranged in described first electrode side, and each described second electrode interdigital one-tenth comb teeth-shaped is arranged in described second electrode side.
4. MOM capacitor according to claim 1, is characterized in that, in every layer of described metal level, the positive-negative polarity of described first electrode and the second electrode is contrary.
5. MOM capacitor according to claim 4, is characterized in that, in every layer of described metal level, the interdigital polarity of described first electrode is consistent with the first electrode, and the interdigital polarity of described second electrode is consistent with the second electrode.
6. MOM capacitor according to claim 5, is characterized in that, in every layer of described metal level, the interdigital alternate intervals of interdigital and described second electrode of described first electrode arranges.
7. MOM capacitor according to claim 1, it is characterized in that, the electric capacity of described MOM capacitor comprise interdigital and the second electrode of the first electrode of positive-negative polarity alternate intervals arrangement in every layer of described metal level interdigital between interdigital and the second electrode of the first electrode of the different adjacent two layers metal level of electric capacity, positive-negative polarity interdigital between electric capacity and edge capacitance.
8. an electric capacity method of adjustment, is characterized in that, for adjusting the electric capacity of any one MOM capacitor described in the claims 1-7, described method comprises:
According to process requirements, transmit control signal to described voltage switchgear, with the positive-negative polarity of the positive-negative polarity and each described second electrode that control each described first electrode be connected with described voltage switchgear;
Wherein, control first electrode of every layer and the second polarity of electrode is contrary, interdigital contrary with the interdigital polarity of the second electrode with the first electrode of alternate intervals arrangement in realizing every layer.
9. electric capacity method of adjustment according to claim 8, it is characterized in that, by controlling described voltage switchgear, to be applied to described first polarity of electrode of each layer identical or different, and corresponding second polarity of electrode is identical or different, adjusts the electric capacity of described MOM capacitor.
10. electric capacity method of adjustment according to claim 9, is characterized in that, the electric capacity Adjustment precision of described MOM capacitor differs with desired value and is less than 5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510237651.7A CN104934410B (en) | 2015-05-08 | 2015-05-08 | A kind of MOM capacitor and electric capacity method of adjustment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510237651.7A CN104934410B (en) | 2015-05-08 | 2015-05-08 | A kind of MOM capacitor and electric capacity method of adjustment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104934410A true CN104934410A (en) | 2015-09-23 |
| CN104934410B CN104934410B (en) | 2017-10-24 |
Family
ID=54121506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510237651.7A Active CN104934410B (en) | 2015-05-08 | 2015-05-08 | A kind of MOM capacitor and electric capacity method of adjustment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104934410B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106253904A (en) * | 2016-08-04 | 2016-12-21 | 成都博思微科技有限公司 | A kind of layout design method of MOM capacitor of sampling in pipeline ADC system |
| CN108257952A (en) * | 2018-01-16 | 2018-07-06 | 北京智芯微电子科技有限公司 | The mos capacitance domain structure in parallel with MOM capacitor |
| WO2019127489A1 (en) * | 2017-12-29 | 2019-07-04 | 华为技术有限公司 | Capacitor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6385033B1 (en) * | 2000-09-29 | 2002-05-07 | Intel Corporation | Fingered capacitor in an integrated circuit |
| CN102024806A (en) * | 2009-09-11 | 2011-04-20 | 联咏科技股份有限公司 | Metal-oxide layer-metal capacitor with low parasitic capacitance |
| US20140152379A1 (en) * | 2012-11-28 | 2014-06-05 | Renesas Electronics Corporation | Capacitor, charge pump circuit, and semiconductor device |
| CN104269394A (en) * | 2014-09-22 | 2015-01-07 | 武汉新芯集成电路制造有限公司 | Capacitor and manufacturing method thereof |
| CN104425441A (en) * | 2013-09-04 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | MOM (metal oxide metal) capacitor |
-
2015
- 2015-05-08 CN CN201510237651.7A patent/CN104934410B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6385033B1 (en) * | 2000-09-29 | 2002-05-07 | Intel Corporation | Fingered capacitor in an integrated circuit |
| CN102024806A (en) * | 2009-09-11 | 2011-04-20 | 联咏科技股份有限公司 | Metal-oxide layer-metal capacitor with low parasitic capacitance |
| US20140152379A1 (en) * | 2012-11-28 | 2014-06-05 | Renesas Electronics Corporation | Capacitor, charge pump circuit, and semiconductor device |
| CN104425441A (en) * | 2013-09-04 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | MOM (metal oxide metal) capacitor |
| CN104269394A (en) * | 2014-09-22 | 2015-01-07 | 武汉新芯集成电路制造有限公司 | Capacitor and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106253904A (en) * | 2016-08-04 | 2016-12-21 | 成都博思微科技有限公司 | A kind of layout design method of MOM capacitor of sampling in pipeline ADC system |
| WO2019127489A1 (en) * | 2017-12-29 | 2019-07-04 | 华为技术有限公司 | Capacitor |
| CN111357103A (en) * | 2017-12-29 | 2020-06-30 | 华为技术有限公司 | Capacitor with a capacitor element |
| CN108257952A (en) * | 2018-01-16 | 2018-07-06 | 北京智芯微电子科技有限公司 | The mos capacitance domain structure in parallel with MOM capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104934410B (en) | 2017-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10311814B2 (en) | Array substrate, display panel, display device and display method | |
| CN104934410A (en) | MOM capacitor and capacitance adjusting method | |
| US8133792B2 (en) | Method for reducing capacitance variation between capacitors | |
| CN102237356B (en) | Integrated circuits, power layout for integrated circuits and power layout method | |
| CN101364017B (en) | Thin-film transistor substrate, method for manufacturing same, liquid crystal display device and driving method thereof | |
| CN103780243B (en) | A kind of 3D chip redundancy silicon through hole fault-tolerant architecture with transfer signal function | |
| CN105788466A (en) | Display panel, manufacturing method thereof and display device | |
| DE202013102666U1 (en) | Device with touch-sensitive electrodes and its production method | |
| TW201401526A (en) | Metal-oxide-metal capacitor | |
| CN103988328A (en) | Interdigitated capacitor having digits of varying width | |
| DE212015000250U1 (en) | Printed circuit board having a plurality of arranged on the circuit board in at least one group of electronic components | |
| WO2018115625A3 (en) | Method for the integration of power chips and bus-bars forming heat sinks | |
| DE102015209198B4 (en) | Capacitor structures with spaced conductive lines | |
| CN208013919U (en) | A kind of capacitance blank touch-control membrane structure | |
| CN104425441A (en) | MOM (metal oxide metal) capacitor | |
| CN102044567B (en) | MOS tube and layout design method thereof | |
| KR101487591B1 (en) | Mom capacitor | |
| CN102902128A (en) | Liquid crystal varifocus lens | |
| CN103809646B (en) | Voltage division circuit and control method thereof | |
| CN105513989A (en) | Chip manufacturing method | |
| CN111009514A (en) | Capacitor element unit for semiconductor device and semiconductor device thereof | |
| DE102015210796A1 (en) | Power converters with parallel-connected semiconductor switches | |
| CN205177828U (en) | MIM structure | |
| CN103839779A (en) | Method for forming high-density capacitor structure and capacitor structure | |
| CN203774309U (en) | Metal-oxide-metal (MOM) capacitor structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |