CN104935330A - Phase-locked loop circuit of gallium arsenide-based double-cantilever beam switch double gates with low leakage current - Google Patents
Phase-locked loop circuit of gallium arsenide-based double-cantilever beam switch double gates with low leakage current Download PDFInfo
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Abstract
A phase-locked loop circuit of gallium arsenide-based double-cantilever beam switch double gates HEMT with low leakage current of the invention is composed of a GaAs substrate, enhancement mode HEMT, a circumscribed low pass filter, a voltage-controlled oscillator and a high-frequency choke coil. While cantilever beam switches are controlled via direct current bias, a pull-down voltage is designed as threshold voltage of HEMT. While the two cantilever beam switches are all suspended and disconnected, the gate voltage is zero and the HEMT is cut off, the phase-locked loop circuit of the invention could reduce leakage current of the gate and reduce power dissipation. While the two cantilever beam switches are pulled down and closed by passing the direct current bias, the gate voltage is the direct current bias to form a two-dimensional electron gas channel, and the HEMT is conducted, and a reference signal and a feedback signal multiply via the HEMT. The drain output signals are circulated and returned by the low pass filter and the voltage-controlled oscillator, and phase-locked loop circuit are finally locked. While only one cantilever beam switch is pulled down and closed, the phase-locked loop circuit could be used for amplifying single signal to enable the circuit to have multifunction. The phase-locked loop circuit of the invention increases efficiency, reduces power dissipation, and achieves the multifunction with smaller volume.
Description
Technical field
The present invention proposes GaAs base low-leakage current double cantilever beam switch double grid HEMT phase-locked loop circuit, belong to the technical field of microelectromechanical systems.
Background technology
Phase-locked loop utilizes feedback control principle to realize, to the tracking of reference signal frequency and phase place, being widely used in the various fields such as radio communication, radar, Digital Television, broadcast.MOSFET element in conventional phase-lock loop circuit, by contrast, high electron mobility transistor (HEMT) has more significant advantage than silica-based MOSFET, such as: electron drift velocity is fast, the advantages such as efficiency is high, low in energy consumption.In addition, MEMS technology because of its structure simple, small volume, the advantage such as low in energy consumption also receives much concern, and MEMS beam structure facilitates controlled, is conducive to the multi-functional of realizing circuit.
Object of the present invention will propose a kind of GaAs base low-leakage current double cantilever beam switch double grid HEMT phase-locked loop circuit just.
Summary of the invention
Technical problem: the object of the invention is to propose a kind of GaAs base low-leakage current double cantilever beam switch double grid HEMT phase-locked loop circuit, two cantilever beams form paralleling switch structure and two grid one_to_one corresponding, the conducting of control HEMT and the transmission of signal.
Technical scheme: the HEMT of a kind of GaAs based low-leakage current double cantilever beam switch double grid phase-locked loop circuit of the present invention is the enhancement mode HEMT grown on gaas substrates, comprises intrinsic GaAs layer, intrinsic AlGaAs layer, N+AlGaAs layer, source electrode, drain electrode, grid, anchor district, cantilever switch, drop-down pole plate, insulating barrier, through hole, lead-in wire; GaAs substrate being intrinsic GaAs layer, intrinsic GaAs layer is intrinsic AlGaAs layer, intrinsic AlGaAs layer is N+AlGaAs layer, and source electrode, drain electrode lay respectively at the both sides of grid, source ground; Two grids be positioned on N+AlGaAs layer are set up in parallel, one end of two cantilever switch is fixed in anchor district, the other end of two cantilever switch is suspended on two grids respectively, drop-down pole plate is positioned at below cantilever switch end, drop-down pole plate ground connection, insulating barrier is arranged on drop-down pole plate, and direct current biasing acts on cantilever switch by high frequency choke coil and anchor district, and the actuation voltage of cantilever switch is designed to the threshold voltage of HEMT;
Drain electrode output signal can select two kinds of working methods, one is that selection first port connects low pass filter, the output of low pass filter connects voltage controlled oscillator, the output of voltage controlled oscillator selects the 3rd port to be carried on a cantilever switch as feedback signal by anchor district, reference signal is loaded on another cantilever switch by anchor district, and the another kind of working method of drain electrode output signal is that selection second port directly exports amplifying signal.
In described phase-locked loop circuit, when direct current biasing is less than actuation voltage, cantilever switch is in suspension off-state, not with gate contact, gate voltage is 0, and heterojunction boundary does not have Two-dimensional electron gas channel, HEMT is in cut-off state, can reduce grid leakage current, reduces power consumption;
Reach when direct current biasing or be greater than actuation voltage, two cantilever switch all drop-down closed with gate contact time, under the effect of gate voltage, two-dimensional electron gas raceway groove is formed, HEMT conducting, reference signal is multiplied by HEMT with feedback signal, drain electrode output packet is containing the phase information of two signals, select the first port input low pass filter, low pass filter filtering HFS, export a direct voltage relevant to phase difference, direct voltage input voltage controlled oscillator, regulate the output frequency of voltage controlled oscillator, voltage controlled oscillator exports and is loaded on cantilever switch as feedback signal letter, until feedback signal and reference signal to reach frequency identical, the lock-out state of constant phase difference, voltage controlled oscillator the 4th port output frequency is reference signal frequency f
ref,
When only having the gate contact that a cantilever switch is drop-down with corresponding, when another cantilever switch suspends and disconnects not with corresponding gate contact, Two-dimensional electron gas channel is formed below closed cantilever switch, high resistance area is formed below the cantilever switch disconnected, the structure that raceway groove is connected with high resistance area is conducive to the reverse breakdown voltage improving HEMT, only have the gating signal on closed cantilever switch can be amplified by HEMT, amplifying signal selects the second port to export, when the cantilever switch loading reference signal closes, second port output frequency is reference signal frequency f
refamplifying signal, when loading the cantilever switch of feedback signal and closing, feedback frequency signal equals the output frequency f of voltage controlled oscillator
o, the second port output frequency is f
oamplifying signal, the cantilever switch of disconnection is conducive to reducing grid leakage current, reduces power consumption.
Beneficial effect: in GaAs base low-leakage current double cantilever beam switch double grid HEMT phase-locked loop circuit of the present invention, MEMS technology combines with HEMT, circuit efficiency is improved, lower power consumption, structure is simple, smaller volume; Double cantilever beam construction of switch, by controlling the drop-down of cantilever beam and suspending, the conducting of control HEMT, makes circuit switch in different operating state; By controlling single cantilever switch, can realize the amplification to individual signals, another is not formed high resistance area by below drop-down cantilever switch, is conducive to the reverse breakdown voltage improving HEMT.
Accompanying drawing explanation
Fig. 1 is the vertical view of GaAs base low-leakage current double cantilever beam switch double grid HEMT phase-locked loop circuit of the present invention.
Fig. 2 is that the A-A ' of Fig. 1 GaAs base low-leakage current double cantilever beam switch double grid HEMT phase-locked loop circuit is to profile.
Fig. 3 is that the B-B ' of Fig. 1 GaAs base low-leakage current double cantilever beam switch double grid HEMT phase-locked loop circuit is to profile.
Fig. 4 be Fig. 1 GaAs base low-leakage current double cantilever beam switch double grid HEMT two switches all closed time raceway groove schematic diagram.
Fig. 5 is the raceway groove schematic diagram of Fig. 1 GaAs base low-leakage current double cantilever beam switch double grid HEMT switch when closing.
Embodiment
For solving the problems of the technologies described above, the invention provides a kind of GaAs base low-leakage current double cantilever beam switch double grid HEMT phase-locked loop circuit.Comprise GaAs substrate, enhancement mode HEMT, and external low pass filter, voltage controlled oscillator, high frequency choke coil, HEMT-structure is followed successively by GaAs substrate from the bottom up, intrinsic GaAs layer, intrinsic AlGaAs layer, and N+AlGaAs layer, also comprises source electrode, drain electrode, grid.Cantilever beam anchor district is positioned at grid side, and two cantilever beams are across on grid by anchor district.The opposite side of grid, is provided with drop-down pole plate below the end of cantilever beam, and drop-down pole plate is covered by insulating barrier.
Reference signal in phase-locked loop circuit and feedback signal are loaded on two cantilever beams respectively by anchor district.Direct current biasing acts on cantilever switch by high frequency choke coil and anchor district, and suspension or the pull-down state of cantilever beam are controlled by direct current biasing, and actuation voltage is designed to the threshold voltage of HEMT, play the effect of switch in whole circuit.
When direct current biasing is less than actuation voltage, two cantilever switch are all in suspension off-state, time not with gate contact, grid voltage is 0, for enhancement mode HEMT, Schottky barrier is deep into intrinsic GaAs layer, and the two-dimensional electron gas on intrinsic GaAs layer and intrinsic AlGaAs layer heterojunction border is depleted, so HEMT cannot conducting, the signal on cantilever switch cannot transmit.
When direct current biasing reaches or surpasses actuation voltage, two cantilever switch all drop-down closed with gate contact time, gate voltage is the size of direct current biasing, and now Schottky barrier narrows, and heterojunction border two-dimensional electron gas increases, and raceway groove is formed, HEMT conducting.It is the result that two signals are multiplied through HEMT that drain electrode exports, and contains the phase information between two signals.Low pass filter carries out filtering to drain electrode output, and HFS, by filtering, exports the direct voltage relevant with phase information.Voltage controlled oscillator is under the effect of described direct voltage, and regulation output frequency, can be loaded on HEMT by moving grid by cantilever switch again as new feedback signal.Until final feedback signal is consistent with the frequency of reference signal, constant phase difference, phase-locked loop circuit completes locking.
Closed and corresponding gate contact by drop-down when only having a cantilever switch, when another cantilever switch is in off-state not with its corresponding gate contact, raceway groove is formed below closed switch, be high resistance area below the switch disconnected, the structure that raceway groove is connected with high resistance area effectively can improve the reverse breakdown voltage of HEMT.Only have the gating signal on closed cantilever switch can be amplified by HEMT, drain electrode exports amplifying signal.Thus by the independent control to a cantilever switch, realize the collection to individual signals and process, expand the range of application of circuit.
GaAs base low-leakage current double cantilever beam switch double grid HEMT phase-locked loop circuit of the present invention comprises GaAs substrate 1, raw at enhancement mode HEMT on gaas substrates, external low pass filter, voltage controlled oscillator, high frequency choke coil.
HEMT-structure comprises intrinsic GaAs layer 2, intrinsic AlGaAs layer 3, N+AlGaAs layer 4 from bottom to up successively, and source electrode 5, and drain 6, two grids 7,8, two, anchor district cantilever switch 9, drop-down pole plate 10, insulating barrier 11, through hole 12, lead-in wire 13.Wherein, source electrode 5 ground connection, anchor district 8 is arranged on grid 7 side, and drop-down pole plate 10 arranges below cantilever switch 9 end, and cantilever switch 9 passes through respective anchor district across above grid.In HEMT, grid 7 and N+AlGaAs layer form Schottky contacts, and intrinsic AlGaAs layer and intrinsic GaAs layer form heterojunction.For enhancement mode HEMT, when gate voltage is 0, Schottky contact barrier run out of the two-dimensional electron gas of heterojunction boundary, does not have communication channel.
HEMT drain electrode 6 can select the first port 14 to access low pass filter, low pass filter exports access voltage controlled oscillator, voltage controlled oscillator exports selects the 3rd port one 6 to be loaded on a cantilever switch 9 by anchor district 8 as feedback signal, and reference signal is loaded on another cantilever switch 9 by anchor district 8.HEMT drain electrode 6 also can select the second port one 5 directly to export amplifying signal.
Direct current biasing is acted on cantilever switch 9 by high frequency choke coil and anchor district 8.Direct current biasing is acted on cantilever switch by anchor district 8.The actuation voltage of cantilever switch is designed to the threshold voltage of HEMT.
When direct current biasing be not enough to make cantilever switch 9 is drop-down to be contacted with grid 7 time, switch disconnects, and gate voltage is 0, does not have Two-dimensional electron gas channel, and HEMT ends, and effectively can reduce grid leakage current, reduces power consumption.
Reach when direct current biasing or be greater than actuation voltage, two cantilever switch 9 are all drop-down closed when contacting with grid 7, and direct current biasing acts on grid 7, heterojunction boundary generation Two-dimensional electron gas channel, as shown in Figure 4, and HEMT conducting.Reference signal is multiplied by HEMT with feedback signal, 6 output packets that drain, containing the phase information between two signals, select the first port 14 to input to low pass filter, and low pass filter carries out filtering to drain electrode output, HFS, by filtering, exports the direct voltage relevant with phase information.Direct voltage can be expressed as:
U
L＝K cos((ω
ref-ω
back)t+φ) (1)
Wherein K is HEMT gain coefficient, ω
reffor reference signal angular frequency, ω
backfor feedback signal angular frequency, φ is that proper phase is poor.The output frequency of DC voltage regulation voltage controlled oscillator.Voltage controlled oscillator output angle frequencies omega after adjustment
ocan be expressed by following formula:
Voltage controlled oscillator exports and is re-loaded on cantilever switch 9 as feedback signal, until final feedback signal is consistent with the frequency of reference signal, and constant phase difference
ω
back＝ω
o＝ω
ref(3)
Phase-locked loop circuit completes locking, and voltage controlled oscillator the 4th port one 7 output signal frequency is consistent with reference signal.
When only having a cantilever switch 9 to be contacted by drop-down and corresponding grid 7, Two-dimensional electron gas channel is formed below drop-down closed cantilever switch 9, be high resistance area below another cantilever switch 9 disconnected, as shown in Figure 5, the structure that raceway groove is connected with high resistance area can improve the reverse breakdown voltage of HEMT.Now, only have the gating signal on closed cantilever switch can amplify through HEMT, amplifying signal exports from the second port one 5.When the cantilever switch 9 loading reference signal closes, the second port one 5 output frequency is reference signal frequency f
refamplifying signal, when loading the cantilever switch 9 of feedback signal and closing, feedback frequency signal equals the output frequency f of voltage controlled oscillator
o, the second port one 5 output frequency is reference signal frequency f
oamplifying signal, drop-down by single cantilever switch 9, realize the amplification to individual signals, circuit has multi-functional.In addition, the cantilever switch 9 of disconnection is conducive to reducing grid leakage current, reduces power consumption.
The preparation method of GaAs base low-leakage current double cantilever beam switch double grid HEMT phase-locked loop circuit of the present invention is as follows:
1) at semi-insulating P type GaAs substrate;
2) epitaxial growth intrinsic GaAs layer about 500nm;
3) epitaxial growth intrinsic AlGaAs separator is about 50nm;
4) grow N+ type AlGaAs layer about 20nm, doping content is 1 × 10
18cm
-3, control thickness and doping content, make HEMT manage as enhancement mode;
5) grow N+ type GaAs thickness and be about 300nm, doping content is 3.5 × 10
18cm
-3;
6) mesa etch isolation active area;
7) grown silicon nitride;
8) photoetching silicon nitride layer, carves source-drain electrode territory, carries out N+ ion implantation, forms source electrode and drain electrode, removes silicon nitride;
9) apply photoresist, the photoresist of electrode contact locations is removed in photoetching;
10) vacuum evaporation gold germanium nickel/gold;
11) peel off, alloying forms source, leaks Ohm contact electrode;
12) apply photoresist, the photoresist of gate location is removed in photoetching;
13) growth thickness is 0.5 μm of Ti/Pt/Au;
14) remove the metal on photoresist and photoresist, form the grid of Schottky contacts;
15) apply photoresist, make lead-in wire by lithography, the window in drop-down pole plate and cantilever beam anchor district;
16) Au that a layer thickness is 0.3 μm is grown;
17) remove photoresist, form the anchor district of lead-in wire, drop-down pole plate, cantilever beam;
18) depositing insulating layer, application epitaxy technique grows the Si of 0.1 μm
xn
1-xinsulating barrier;
19) unnecessary insulating barrier is removed in photoetching, only retains the insulating barrier above drop-down pole plate;
20) form PMGI sacrifice layer by spin coating mode, then photoetching sacrifice layer, only retain the sacrifice layer below cantilever beam;
21) down payment of one deck for electroplating is grown: evaporation Ti/Au/Ti, as seed layer thickness 50/150/30nm;
22) apply photoresist, make cantilever beam by lithography, the window of anchor district and connecting line;
23) electroplate one deck gold, its thickness is 2 μm;
24) remove photoresist, remove the layer gold on photoresist simultaneously;
25) anti-carve titanium/gold/titanium, corrosion Seed Layer, formed cantilever beam and and connecting line;
26) polyimide sacrificial layer is removed, release MEMS cantilever beam;
27) HEMT of preparation is connected with external circuit, forms phase-locked loop circuit.
Whether distinguish is that the standard of this structure is as follows:
GaAs base low-leakage current double cantilever beam switch double grid HEMT phase-locked loop circuit of the present invention adopts two cantilever beams as the switch of control HEMT conducting and Signal transmissions.The actuation voltage of cantilever switch is designed to the threshold voltage of HEMT.When cantilever switch disconnects, gate voltage is 0, HEMT cut-off.When two cantilever switch all drop-down closed time, direct current biasing accesses grid as gate voltage, two-dimensional electron gas raceway groove is formed, HEMT conducting, reference signal is multiplied by HEMT with feedback signal, output signal under the circulation feedback effect of low pass filter and voltage controlled oscillator, finally reach lock-out state.In addition, when only having a cantilever switch to close, form high resistance area under another cantilever switch disconnected, improve the reverse breakdown voltage of HEMT, now, the amplification to single gating signal can be realized, expand the range of application of circuit.
Claims (2)
1. a GaAs based low-leakage current double cantilever beam switch double grid phase-locked loop circuit, it is characterized in that the HEMT of this phase-locked loop circuit is the enhancement mode HEMT of growth on GaAs substrate (1), comprise intrinsic GaAs layer (2), intrinsic AlGaAs layer (3), N+AlGaAs layer (4), source electrode (5), drain electrode (6), grid (7), anchor district (8), cantilever switch (9), drop-down pole plate (10), insulating barrier (11), through hole (12), lead-in wire (13); GaAs substrate (1) is upper is intrinsic GaAs layer (2), intrinsic GaAs layer (2) is upper is intrinsic AlGaAs layer (3), intrinsic AlGaAs layer (3) is upper is N+AlGaAs layer (4), source electrode (5), drain electrode (6) lay respectively at the both sides of grid (7), source electrode (5) ground connection;
Two grids (7) be positioned on N+AlGaAs layer (4) are set up in parallel, one end of two cantilever switch (9) is fixed in anchor district (8), the other end of two cantilever switch (9) is suspended on two grids (7) respectively, drop-down pole plate (10) is positioned at below cantilever switch (9) end, drop-down pole plate (10) ground connection, insulating barrier (11) is arranged on drop-down pole plate (10), direct current biasing acts on cantilever switch (9) by high frequency choke coil and anchor district (8), the actuation voltage of cantilever switch (9) is designed to the threshold voltage of HEMT,
Drain electrode (6) output signal can select two kinds of working methods, one is that selection first port (14) connects low pass filter, the output of low pass filter connects voltage controlled oscillator, the output of voltage controlled oscillator selects the 3rd port (16) to be carried on a cantilever switch (9) as feedback signal by anchor district (8), reference signal is loaded on another cantilever switch (9) by anchor district (8), and the another kind of working method that drain electrode (6) outputs signal is that selection second port (15) directly exports amplifying signal.
2. GaAs based low-leakage current double cantilever beam switch double grid phase-locked loop circuit according to claim 1, it is characterized in that in described phase-locked loop circuit, when direct current biasing is less than actuation voltage, cantilever switch (9) is in suspension off-state, does not contact with grid (7), and gate voltage is 0, heterojunction boundary does not have Two-dimensional electron gas channel, HEMT is in cut-off state, can reduce grid leakage current, reduces power consumption;
Reach when direct current biasing or be greater than actuation voltage, two cantilever switch (9) are all drop-down closed when contacting with grid (7), under the effect of gate voltage, two-dimensional electron gas raceway groove is formed, HEMT conducting, reference signal is multiplied by HEMT with feedback signal, drain electrode (6) output packet is containing the phase information of two signals, the first port (14) is selected to input low pass filter, low pass filter filtering HFS, export a direct voltage relevant to phase difference, direct voltage input voltage controlled oscillator, regulate the output frequency of voltage controlled oscillator, voltage controlled oscillator exports and is loaded on cantilever switch (9) as feedback signal letter, until feedback signal and reference signal to reach frequency identical, the lock-out state of constant phase difference, voltage controlled oscillator the 4th port (17) output frequency is reference signal frequency f
ref,
When the grid (7) only having cantilever switch (9) drop-down with corresponding contacts, when another cantilever switch (9) suspension disconnects and not contacting with corresponding grid (7), closed cantilever switch (9) below forms Two-dimensional electron gas channel, cantilever switch (9) below disconnected forms high resistance area, the structure that raceway groove is connected with high resistance area is conducive to the reverse breakdown voltage improving HEMT, only have the gating signal on closed cantilever switch (9) can be amplified by HEMT, amplifying signal selects the second port (15) to export, when the cantilever switch (9) loading reference signal is closed, second port (15) output frequency is reference signal frequency f
refamplifying signal, when the cantilever switch (9) loading feedback signal is closed, feedback frequency signal equals the output frequency f of voltage controlled oscillator
o, the second port (15) output frequency is f
oamplifying signal, the cantilever switch (9) of disconnection is conducive to reducing grid leakage current, reduces power consumption.
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