CN104935336A - Phase-locked loop circuit of a silica-based double-cantilever beam movable gate with low leakage current - Google Patents
Phase-locked loop circuit of a silica-based double-cantilever beam movable gate with low leakage current Download PDFInfo
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- CN104935336A CN104935336A CN201510379710.4A CN201510379710A CN104935336A CN 104935336 A CN104935336 A CN 104935336A CN 201510379710 A CN201510379710 A CN 201510379710A CN 104935336 A CN104935336 A CN 104935336A
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Abstract
A phase-locked loop circuit of a silica-based double-cantilever beam movable gate MOSFET with low leakage current of the invention is composed of a silicon substrate, N type enhancement mode MOSFET, a circumscribed low pass filter, a voltage-controlled oscillator and a high-frequency choke coil. The phase-locked loop circuit of the invention has the advantages of reducing power dissipation and achieving multifunction, and smaller volume. The gates of MOSFET are two cantilever beams suspended on gate oxide, and are used as input ends of a reference signal and a feedback signal, and are controlled by direct current bias. A pull-down voltage is designed as threshold voltage of the MOSFET. While the two cantilever beam movable gates are not contacted with the gate oxide, the MOSFET is cut off. Because gate capacitance is less than that of the traditional MOSFET, the phase-locked loop circuit of the invention could reduce gate leakage current and reduce power dissipation. While the two cantilever beam movable gates are pulled down and are contacted with the gate oxide, the MOSFET is conducted, and the reference signal and the feedback signal are multiply via the MOSFET. The phase difference with two signals output by the gates is circulated via the circumscribed low pass filter and the voltage-controlled oscillator until the phase is locked.
Description
Technical field
The present invention proposes silica-based low-leakage current double cantilever beam movable gate MOSFET (mos field effect transistor) phase-locked loop circuit, belong to the technical field of microelectromechanical systems.
Background technology
Phase-locked loop is a kind of loop of locking phase.It adopts feedback control principle, utilizes frequency and the phase place of the reference signal control loop internal oscillation signal of outside input, realize output signal frequency to reference signal frequency from motion tracking, until both frequencies are consistent, constant phase difference.Phase-locked loop circuit is a kind of method making frequency comparatively stable in radio transmission, is generally used for Closed loop track circuit.The appearance of MOSFET in phase-locked loop circuit, inevitably can introduce the grid leakage current of cut-off state, thus increases power consumption.Along with the development of microelectric technique, modern communications, radar system require that phase-locked loop circuit has simple structure, and little volume and little power consumption, these factors all limit the development of phase-locked loop circuit.
Micro mechanical system has that volume is little, low in energy consumption, low cost and other advantages, cantilever beam can the development of moving grid structure also increasingly mature.Object of the present invention will propose the implementation method of the movable gate MOSFET phase-locked loop circuit of a kind of silica-based low-leakage current double cantilever beam just.
Summary of the invention
Technical problem: the object of this invention is to provide the movable gate MOSFET phase-locked loop circuit of a kind of silica-based low-leakage current double cantilever beam, adopt cantilever beam as the grid of MOSFET, reduce the grid leakage current of MOSFET cut-off state in phase-locked loop circuit, reduce power consumption, circuit structure is simplified, and volume is miniaturized.Also pass through the locking to the control realization phase place of cantilever beam movable grid and other functions simultaneously.
Technical scheme: for solving the problems of the technologies described above, the silica-based low-leakage current double cantilever beam of one of the present invention can moving grid phase-locked loop circuit MOSFET be N-type enhancement mode MOSFET, and growth is on a silicon substrate, MOSFET comprises source electrode, drain electrode, gate oxide, anchor district, cantilever beam can moving grid, drop-down pole plate, insulating barrier, through hole, lead-in wire, source ground;
MOSFET adopt two cantilever beams suspended can moving grid as grid, anchor district is arranged on gate oxide both sides, cantilever beam can one end of moving grid be fixed in anchor district, the other end is across being suspended on gate oxide, arrange drop-down pole plate be on a silicon substrate positioned at cantilever beam can below moving grid end, drop-down pole plate ground connection, insulating barrier covers on drop-down pole plate, direct current biasing acts on cantilever beam by high frequency choke coil and anchor district can on moving grid, and cantilever beam the actuation voltage of moving grid can be set to the threshold voltage of MOSFET; Lead-in wire connects source electrode respectively by through hole, drain electrode; ,
MOSFET drain electrode output has two kinds of different working methods, one is selection first port access low pass filter, low pass filter exports access voltage controlled oscillator, voltage controlled oscillator export selection the 3rd port be loaded into a cantilever beam as feedback signal by anchor district can on moving grid, feedback loop is formed with MOSFET, reference signal is loaded into another cantilever beam by anchor district can on moving grid, and the another kind of working method that MOSFET drain electrode exports is that selection second port directly exports amplifying signal.
In this phase-locked loop circuit, when direct current biasing is less than actuation voltage, two cantilever beams can moving grid when being all suspended on gate oxide, and MOSFET ends, and gate capacitance is less, effectively can reduce grid leakage current, reduces power consumption;
When direct current biasing reaches or surpasses actuation voltage, two cantilever beams can moving grid be all drop-down when contacting with gate oxide, MOSFET conducting, reference signal is multiplied through MOSFET with feedback signal, drain electrode output packet is containing the phase information of two signals, select the first port access low pass filter, low pass filter exports the direct voltage relevant with phase difference, as control signal access voltage controlled oscillator, the output frequency of voltage controlled oscillator is conditioned, being loaded into cantilever beam as feedback signal can on moving grid, feedback through loop circulates, final feedback signal is equal with reference signal frequency, constant phase difference, realize locking, signal after locking is exported by voltage controlled oscillator the 4th port,
When only have a cantilever beam can moving grid drop-down time, raceway groove can be formed below moving grid by drop-down cantilever beam, can be not high resistance area below moving grid by drop-down cantilever beam, the structure that raceway groove is connected with high resistance area plays the effect improving reverse breakdown voltage, only have and the gating signal on moving grid can be amplified process by MOSFET by drop-down cantilever beam, select to export amplifying signal by the second port, when only have load reference signal cantilever beam can moving grid by drop-down time, the second port output frequency is reference signal frequency f
refamplifying signal, when only have load feedback signal cantilever beam can moving grid by drop-down time, the frequency of feedback signal is the output frequency f of voltage controlled oscillator
0, the second port output frequency is f
0amplifying signal.
Beneficial effect: compared with existing phase-locked loop circuit, this novel movable gate MOSFET phase-locked loop circuit of silica-based low-leakage current double cantilever beam adopts two cantilever beams as grid, realize the disengaging of grid and gate oxide in MOSFET cut-off state, can circuit leakage current be reduced, reduce power consumption; In addition, cantilever beam can moving grid structure that circuit is facilitated is controlled, not only can realize PGC demodulation under the circulation feedback of moving grid connection circuit outside by drop-down two cantilever beams, and can by drop-down single cantilever beam can moving grid to the independent amplification of gating signal; The employing of the movable gate technique of cantilever beam, also makes to simplify the structure, and volume is miniaturized.
Accompanying drawing explanation
Fig. 1 is the vertical view of the movable gate MOSFET phase-locked loop circuit of the present invention's silica-based low-leakage current double cantilever beam.
Fig. 2 is that the A-A ' of the movable gate MOSFET phase-locked loop circuit of Fig. 1 silica-based low-leakage current double cantilever beam is to profile.
Fig. 3 is that the B-B ' of the movable gate MOSFET phase-locked loop circuit of Fig. 1 silica-based low-leakage current double cantilever beam is to profile.
Fig. 4 is that the movable gate MOSFET of Fig. 1 silica-based low-leakage current double cantilever beam two cantilever beams can all drop-down raceway groove schematic diagram of moving grid
Fig. 5 is that the single cantilever beam of the movable gate MOSFET of Fig. 1 silica-based low-leakage current double cantilever beam can the drop-down raceway groove schematic diagram of moving grid.
Have in figure: silicon substrate 1, source electrode 2, drain electrode 3, gate oxide 4, anchor district 5, cantilever beam can moving grid 6, drop-down pole plate 7, insulating barrier 8, through hole 9, lead-in wire the 10, first port 11, second port one the 2, three port one the 3, four port one 4.
Embodiment
The invention provides the movable gate MOSFET phase-locked loop circuit of a kind of silica-based low-leakage current double cantilever beam.Comprise silicon substrate, N-type enhancement mode MOSFET, and external low pass filter, voltage controlled oscillator, high frequency choke coil; MOSFET growth on a silicon substrate, comprise source electrode, drain electrode, gate oxide, two cantilever beams can moving grid, anchor district, drop-down pole plate, insulating barrier.The grid of MOSFET is two cantilever beams across being suspended on gate oxide.Anchor district is arranged on gate oxide side, and cantilever beam can pass through anchor district across on gate oxide by moving grid; Drop-down pole plate is arranged on cantilever beam can below the end of moving grid; Insulating barrier covers on drop-down pole plate.
Reference signal in phase-locked loop circuit and feedback signal are loaded into two cantilever beams respectively by anchor district can on moving grid.Direct current biasing acts on cantilever beam by high frequency choke coil and anchor district can on moving grid, drop-down pole plate ground connection.
The actuation voltage of cantilever beam is designed to the threshold voltage of MOSFET.If direct current biasing is less than actuation voltage, two cantilever beams can moving grid when being all suspended on gate oxide, and MOSFET cannot conducting, and because grid and gate oxide disengage, gate capacitance is less, effectively can reduce leakage current, reduces power consumption.
When direct current biasing reaches or surpasses actuation voltage, two cantilever beams can moving grid all by direct current biasing realize drop-down contact with gate oxide time, MOSFET conducting, reference signal is multiplied through MOSFET with feedback signal, and drain electrode output packet contains the phase information between two signals.Under the circulation feedback effect of low pass filter and voltage controlled oscillator, complete locking.
When only have a cantilever beam can moving grid is drop-down contact with gate oxide time, this cantilever beam can form raceway groove below moving grid, and another can be not high resistance area below moving grid by drop-down cantilever beam, can increase the reverse breakdown voltage of MOSFET.Now, only have drop-down cantilever beam the gating signal on moving grid can be transferred on MOSFET, amplified by MOSFET and export.Thus by can moving grid drop-down separately to a cantilever beam, realize the amplification to individual signals, expand the range of application of circuit.
The movable gate MOSFET phase-locked loop circuit of silica-based low-leakage current double cantilever beam of the present invention comprises silicon substrate 1, arranges N-type enhancement mode MOSFET on a silicon substrate, external low pass filter, voltage controlled oscillator, high frequency choke coil.
MOSFET comprises source electrode 2, drain electrode 3, gate oxide 4, anchor district 5, and cantilever beam can moving grid 6, drop-down pole plate 7, insulating barrier 8, through hole 9, lead-in wire 10.Wherein, source electrode 2 ground connection, the grid of MOSFET be across and be suspended in two cantilever beams on gate oxide can moving grid 6, source electrode 2 and drain electrode 3 are oppositely arranged, gate oxide 4 is connected between source and drain, and anchor district 5 is arranged on the side of gate oxide 4, and cantilever beam can pass through anchor district 5 across on gate oxide 4 by moving grid 6, drop-down pole plate 7 is arranged on cantilever beam can below moving grid 6 end, and insulating barrier 8 covers on drop-down pole plate 7.
Drain electrode 3 exports two kinds of connected modes, one accesses low pass filter through the first port 11, low pass filter exports access voltage controlled oscillator, voltage controlled oscillator export access a cantilever beam as feedback signal by anchor district 5 can moving grid 6, reference signal is loaded into another cantilever beam by anchor district 5 can on moving grid 6.The another kind of connected mode that drain electrode 3 exports is that selection second port one 2 directly exports amplifying signal.
Direct current biasing acts on cantilever beam by high frequency choke coil and anchor district 5 can on moving grid 6, drop-down pole plate 7 ground connection.Cantilever beam the actuation voltage of moving grid 6 can be designed to the threshold voltage of MOSFET.
When direct current biasing is less than actuation voltage, two cantilever beams can all be in suspended state when not contacting with gate oxide 4 by moving grid 6, and MOSFET ends.Because cantilever beam can disengage with gate oxide 4 by moving grid 6, gate capacitance is less, effectively can reduce the generation of leakage current, reduces circuit power consumption.
Reach when direct current biasing or be greater than actuation voltage, two cantilever beams can moving grid 6 be all drop-down when contacting with gate oxide 4, produces conduct electrons raceway groove between source electrode 2 and drain electrode 3, as shown in Figure 4, and MOSFET conducting.Reference signal realizes being multiplied by MOSFET with feedback signal, 3 output packets that drain contain the phase information between two signals, drain electrode 3 output selection first port 11 inputs to low pass filter and carries out filtering, and HFS is by filtering, and output packet contains the relevant direct voltage of phase information.Direct voltage can be expressed as:
U
L＝K cos((ω
ref-ω
back)t+φ) (1)
Wherein K is MOSFET gain coefficient, ω
reffor reference signal angular frequency, ω
backfor feedback signal angular frequency, φ is that proper phase is poor.Direct voltage, as control signal, regulates the output frequency of voltage controlled oscillator.Voltage controlled oscillator output frequency ω after adjustment
ocan be expressed by following formula:
Voltage controlled oscillator export be loaded into cantilever beam as feedback signal can on moving grid 6, until final feedback signal is consistent with the frequency of reference signal, constant phase difference:
ω
back＝ω
o＝ω
ref(3)
Phase-locked loop circuit completes locking, and voltage controlled oscillator output signal frequency is consistent with reference signal.
When only having a cantilever beam to be contacted with gate oxide 4 by drop-down by moving grid 6, another cantilever beam can moving grid 6 when being in suspended state.Can be formed raceway groove below moving grid 6 by drop-down cantilever beam, can not formed high resistance area below moving grid 6 by drop-down cantilever beam, as shown in Figure 5, the structure that raceway groove is connected with high resistance area effectively can improve the reverse breakdown voltage of device.Now, only have and can be amplified by MOSFET by the signal on moving grid 6 by drop-down cantilever beam, amplifying signal exports through the second port one 2.When only have load reference signal cantilever beam can moving grid 6 by drop-down time, the second port one 2 output frequency is reference signal frequency f
refamplifying signal, when only have load feedback signal cantilever beam can moving grid 6 by drop-down time, the frequency of feedback signal is the output frequency f of voltage controlled oscillator
o, the second port one 2 output frequency is f
oamplifying signal.Circuit has multi-functional.
The preparation method of the low-leakage current frequency divider based on the movable gate MOSFET of silica-based cantilever beam of the present invention is as follows:
1) P type Si substrate is prepared;
2) end oxide growth
3) deposited silicon nitride;
4) photoetching, etch silicon nitride form MOSFET source and drain electrode;
5) field oxidation;
6) silicon nitride and basal oxygen sheet is removed;
7) carry out gate oxidation, adjusting threshold voltage, make MOSFET be enhancement mode;
8) deposit spathic silicon, and photoetching, retain the polysilicon of the anchor zone position of cantilever beam;
9) plating evaporation growth Al;
10) apply photoresist, retain the photoresist above drop-down pole plate;
11) anti-carve Al, form drop-down pole plate;
12) deposition insulating layer, the Si that epitaxial growth is 0.1 μm
xn
1-xinsulating barrier;
13) photoetching window, etches away unnecessary Si
xn
1-x:
14) apply photoresist, retain the insulating barrier of drop-down pole plate;
15) utilize reactive ion etching, form the silicon nitride medium layer on drop-down pole plate;
16) form PMGI sacrifice layer by spin coating mode, then photoetching sacrifice layer, only retaining cantilever beam can sacrifice layer below moving grid 5;
17) plating evaporation growth Al;
18) apply photoresist, retain the photoresist above cantilever beam;
19) anti-carve Al, forming cantilever beam can moving grid;
20) apply photoresist, photoetching hand-hole, inject N+ phosphonium ion, form MOSFET source and drain electrode;
21) make through hole and lead-in wire, coating photoresist, removes the photoresist of source-drain electrode contact zone, vacuum evaporation gold germanium nickel/gold, peels off, and alloying forms ohmic contact;
22) discharge PMGI sacrifice layer, form the cantilever beam suspended;
23) MOSFET of preparation is connected with external circuit, forms phase-locked loop circuit.
Difference with the prior art of the present invention is:
The movable gate MOSFET phase-locked loop circuit of silica-based low-leakage current double cantilever beam of the present invention adopts two cantilever beam structures as the grid of MOSFET, control the drop-down of cantilever beam by direct current biasing or suspend, cantilever beam the actuation voltage of moving grid can be designed to the threshold voltage of MSOFET, thus the conducting of control MOSFET and cut-off.Disengage at two grids of cut-off state MOSFET and gate oxide, the generation of leakage current can be reduced.Two cantilever beams can moving grid be all drop-down when contacting with gate oxide, and reference signal and feedback signal are passed through realization on MOSFET and be multiplied, and at low pass filter, under the ringing of voltage controlled oscillator, finally realize phase-locked.In addition, also realize the amplification of individual signals by drop-down single cantilever beam, increase reverse breakdown voltage simultaneously.The use of micro mechanical technology, makes circuit power consumption reduce, and structure is simple, smaller volume.
Claims (2)
1. a silica-based low-leakage current double cantilever beam can moving grid phase-locked loop circuit, it is characterized in that this phase-locked loop circuit MOSFET is N-type enhancement mode MOSFET, growth is on silicon substrate (1), MOSFET comprises source electrode (2), drain electrode (3), gate oxide (4), anchor district (5), cantilever beam can moving grid (6), drop-down pole plate (7), insulating barrier (8), through hole (9), lead-in wire (10), source electrode (2) ground connection;
MOSFET adopt two cantilever beams suspended can moving grid (6) as grid, anchor district (5) is arranged on gate oxide (4) both sides, cantilever beam can one end of moving grid (6) be fixed in anchor district (5), the other end is across being suspended on gate oxide (4), the drop-down pole plate (7) be arranged on silicon substrate (1) is positioned at cantilever beam can below moving grid (6) end, drop-down pole plate (7) ground connection, insulating barrier (8) covers on drop-down pole plate (7), direct current biasing acts on cantilever beam by high frequency choke coil and anchor district (5) can on moving grid (6), cantilever beam the actuation voltage of moving grid (6) can be set to the threshold voltage of MOSFET, lead-in wire (10) connects source electrode (2) respectively by through hole (9), drain electrode (3),
MOSFET drain electrode (3) output has two kinds of different working methods, one is selection first port (11) access low pass filter, low pass filter exports access voltage controlled oscillator, voltage controlled oscillator export selection the 3rd port (13) be loaded into a cantilever beam as feedback signal by anchor district (5) can on moving grid (6), feedback loop is formed with MOSFET, reference signal is loaded into another cantilever beam by anchor district (5) can on moving grid (6), the another kind of working method that MOSFET drain electrode (3) exports is that selection second port (12) directly exports amplifying signal.
2. silica-based low-leakage current double cantilever beam according to claim 1 can moving grid phase-locked loop circuit, it is characterized in that in this phase-locked loop circuit, when direct current biasing is less than actuation voltage, two cantilever beams can moving grid (6) when being all suspended on gate oxide (4), MOSFET ends, gate capacitance is less, effectively can reduce grid leakage current, reduces power consumption;
When direct current biasing reaches or surpasses actuation voltage, two cantilever beams can moving grid (6) be all drop-down when contacting with gate oxide (4), MOSFET conducting, reference signal is multiplied through MOSFET with feedback signal, drain electrode (3) output packet is containing the phase information of two signals, the first port (11) is selected to access low pass filter, low pass filter exports the direct voltage relevant with phase difference, as control signal access voltage controlled oscillator, the output frequency of voltage controlled oscillator is conditioned, being loaded into cantilever beam as feedback signal can on moving grid (6), feedback through loop circulates, final feedback signal is equal with reference signal frequency, constant phase difference, realize locking, signal after locking is exported by voltage controlled oscillator the 4th port (14),
When only have a cantilever beam can moving grid (6) drop-down time, raceway groove can be formed in moving grid (6) below by drop-down cantilever beam, not by drop-down cantilever beam can moving grid (6) below be high resistance area, the structure that raceway groove is connected with high resistance area plays the effect improving reverse breakdown voltage, only have and the gating signal on moving grid (6) can be amplified process by MOSFET by drop-down cantilever beam, select to export amplifying signal by the second port (12), when only have load reference signal cantilever beam can moving grid (6) by drop-down time, second port (12) output frequency is reference signal frequency f
refamplifying signal, when only have load feedback signal cantilever beam can moving grid (6) by drop-down time, the frequency of feedback signal is the output frequency f of voltage controlled oscillator
0, the second port (12) output frequency is f
0amplifying signal.
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