CN105088192A - Gas flow control method for multi-pipeline liquid gasification reaction film-formation equipment - Google Patents
Gas flow control method for multi-pipeline liquid gasification reaction film-formation equipment Download PDFInfo
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- CN105088192A CN105088192A CN201510494546.1A CN201510494546A CN105088192A CN 105088192 A CN105088192 A CN 105088192A CN 201510494546 A CN201510494546 A CN 201510494546A CN 105088192 A CN105088192 A CN 105088192A
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Abstract
The invention discloses a gas flow control method for multi-pipeline liquid gasification reaction film-formation equipment. The multi-pipeline liquid gasification reaction film-formation equipment comprises multiple gas inlet pipelines, a sucking pump and a reaction chamber. The multiple gas inlet pipelines are jointly introduced into the reaction chamber, and the sucking pump is connected with the reaction chamber and branch valves located on the gas inlet pipelines; carrier gas and reaction gas are introduced into the gas inlet pipelines to make retention gas and impurities sucked away by the sucking pump through the branch valves; and then the branch valves are adjusted to make the carrier gas and the reaction gas enter the reaction chamber to conduct chemical reaction, and after the reaction is finished, residual exhaust gas in the reaction chamber is sucked away by the sucking pump. According to the gas flow control method for the multi-pipeline liquid gasification reaction film-formation equipment, the flow directions of the carrier gas and the reaction gas which flow through the gas inlet pipelines before the chemical reaction starts are optimized, a method of directly making gas flow into the reaction chamber in a traditional processing form is replaced, the situation that the residual gas and the impurities which are retained in the gas inlet pipelines directly enter the reaction chamber after processing last time is reduced, and the particle performance after film formation is effectively improved.
Description
Technical field
The present invention relates to IC manufacturing field, particularly a kind of multi-pipeline liquid gasification is reacted into film device flow controlling method of air.
Background technology
In semiconductor integrated circuit manufacturing process, be widely used with the processing procedure of liquid gasification reaction film forming, and TEOS (tetraethyl-silicon oxide) deposit silicon-dioxide is used in 65nm and following live width technique because have better step coverage.
At present, industry mainly adopts the multi-pipeline liquid gasification of Applied Materials to be reacted into film device.This equipment is by providing the TEOS of different flow to prepare SiO of different nature
2.When equipment has the TEOS pipeline of more than two-way and two-way, the road TEOS pipeline wherein used has gas stream and leads to other not by the TEOS pipeline that uses after liquid gasification, this part gas be trapped in other pipelines can be stayed in pipeline always, can sources of particles be become when this road pipeline of use itself, be brought to reaction cavity and affect the particle performance of film.
Summary of the invention
The invention provides a kind of multi-pipeline liquid gasification and be reacted into film device flow controlling method of air, to improve the particle performance using liquid gasification reaction thin film-forming method processing procedure.
For solving the problems of the technologies described above, the invention provides a kind of multi-pipeline liquid gasification and be reacted into film device flow controlling method of air, this multi-pipeline liquid gasification is reacted into film device and comprises many admission passages, off-gas pump and reaction chamber, many admission passage passes into reaction chamber jointly, described off-gas pump and reaction chamber and the tributary valve being positioned at admission passage are connected, in admission passage, pass into carrier gas and reaction gas, entrapped air volume, impurity are siphoned away by off-gas pump by tributary valve; Then, regulate tributary valve to make carrier gas and reaction gas enter into reaction chamber to carry out chemical reaction, after having reacted, take the remainder of exhaust gas in described reaction chamber away by off-gas pump.
As preferably, described admission passage comprises gas-carrier pipeline and reaction gas pipeline, and this gas-carrier pipeline and reaction gas pipe section overlap, and described tributary valve is arranged on the pipeline of coincidence.
As preferably, the pipeline of this coincidence is also provided with high temperature purification device and variable valve, this high temperature purification device and variable valve are all arranged on the inlet end of tributary valve.
As preferably, in described gas-carrier pipeline, be also provided with strainer and gas flow controller, in described reaction gas pipeline, be also provided with under meter.
As preferably, describedly in admission passage, pass into carrier gas and reaction gas, entrapped air volume, impurity are comprised: first by the step that off-gas pump siphons away by tributary valve, open off-gas pump and regulate tributary valve, then, open the strainer in gas-carrier pipeline, gas flow controller and high temperature purification device, pass into carrier gas, make carrier gas enter into tributary valve after strainer, gas flow control valve and high temperature purification device; Then, then open the under meter on reaction gas pipeline, reaction gas is mixed with carrier gas through under meter in high temperature purification device, enters into tributary valve through variable valve, until the entrapped air volume in the valve of tributary, impurity siphon away by off-gas pump.
As preferably, the purification temperature in described high temperature purification device is 160 DEG C.
As preferably, described tributary valve and reaction chamber are all positioned at heating jacket region, and in described reaction chamber, the chemical reaction temperature of carrier gas and reaction gas is 110 DEG C.
As preferably, the time passing into carrier gas and reaction gas in admission passage is 5-10s, then regulates tributary valve to make carrier gas and reaction gas enter into reaction chamber to carry out chemical reaction.
Compared with prior art, multi-pipeline liquid gasification of the present invention is reacted into film device flow controlling method of air, this multi-pipeline liquid gasification is reacted into film device and comprises many admission passages, off-gas pump and reaction chamber, many admission passage passes into reaction chamber jointly, described off-gas pump and reaction chamber and the tributary valve being positioned at admission passage are connected, in admission passage, pass into carrier gas and reaction gas, entrapped air volume, impurity are siphoned away by off-gas pump by tributary valve; Then, regulate tributary valve to make carrier gas and reaction gas enter into reaction chamber to carry out chemical reaction, after having reacted, take the remainder of exhaust gas in described reaction chamber away by off-gas pump.The present invention flows through the carrier gas of admission passage and the flow direction of reaction gas before being started by optimization chemical reaction, it is made first to flow to tributary valve, and utilize off-gas pump entrapped air volume and impurity to be taken away, instead of the method in conventional process formula, carrier gas and reaction gas being flowed directly into reaction chamber, reduce because the entrap bubble be trapped in after last processing procedure in admission passage and impurity directly enter reaction chamber, effectively improve the particle performance after film forming.
Accompanying drawing explanation
Fig. 1 is the structural representation that in the specific embodiment of the present invention, multi-pipeline liquid gasification is reacted into film device;
Fig. 2 is the schema that in the specific embodiment of the present invention, multi-pipeline liquid gasification is reacted into film device flow controlling method of air.
Shown in figure: 100-admission passage, 110-tributary valve, 120-variable valve, 130-high temperature purification device, 140-strainer, 150-gas flow controller, 160-under meter, 200-reaction chamber, 300-off-gas pump.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.It should be noted that, accompanying drawing of the present invention all adopts the form of simplification and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
As depicted in figs. 1 and 2, the invention provides a kind of multi-pipeline liquid gasification and be reacted into film device flow controlling method of air, its object is to, improve the flow direction that multi-pipeline liquid gasification is reacted into gas in film device, thus the entrap bubble be trapped in after making the last time make in pipeline and impurity are eliminated, avoid entrapped air volume and impurity to enter into reaction chamber, the particle performance in liquid gasification reaction thin film-forming method processing procedure is impacted.
First, please emphasis with reference to Fig. 1, this multi-pipeline liquid gasification is reacted into film device and comprises many admission passages 100, off-gas pump 300 and reaction chamber 200, described many admission passages 100 pass into reaction chamber 200 jointly, described off-gas pump 300 is connected with reaction chamber 200 and the tributary valve 110 be positioned on admission passage 100, particularly, this tributary valve 110 is arranged on described admission passage 100 near one end of reaction chamber 200.
As preferably, described admission passage 100 comprises gas-carrier pipeline and reaction gas pipeline, and described gas-carrier pipeline and reaction gas pipe section overlap, and described tributary valve 110 is arranged on the pipeline of coincidence.The pipeline of this coincidence is also provided with high temperature purification device 130 and variable valve 120, this high temperature purification device 130 and variable valve 120 are all arranged on the inlet end of tributary valve 110.Also be provided with strainer 140 and gas flow controller 150 in the gas-carrier pipeline of non-coincidence part, in described reaction gas pipeline, be also provided with under meter 160.In other words, carrier gas and reaction gas carry out respectively Flow-rate adjustment with after through high temperature purification device 130 mix purification after, pipeline again through overlapping is passed in reaction chamber 200 jointly, and the purification temperature in described high temperature purification device 130 is 160 DEG C, can effectively remove steam, impurity.
Incorporated by reference to Fig. 2, multi-pipeline liquid gasification of the present invention is reacted into film device flow controlling method of air and comprises the following steps.
First, in admission passage 100, pass into carrier gas and reaction gas, make the entrapped air volume in admission passage 100, impurity is pooled to tributary valve 110 place, then siphoned away by off-gas pump 300.
Above-mentioned steps specifically comprises: open off-gas pump 300 and regulate tributary valve 110; Open the strainer 140 in gas-carrier pipeline, gas flow controller 150 and high temperature purification device 130, pass into carrier gas, make carrier gas after strainer 140, gas flow controller 150 and high temperature purification device 130, open variable valve 120 again, carrier gas after purification is arrived in described tributary valve 110 through variable valve 120, and now carrier gas can not enter into reaction chamber 200.Open the under meter 160 on reaction gas pipeline again, reaction gas is made to purify in high temperature purification device 130 through under meter 160 and mix with carrier gas, tributary valve 110 is entered into, until the entrapped air volume in tributary valve 110, impurity siphon away by off-gas pump 300 through variable valve 120.
Then, after entrapped air volume, impurity are taken away by off-gas pump 300, regulate tributary valve 110 to make carrier gas and reaction gas enter into reaction chamber 200 and carry out chemical reaction, film former, after reaction completes, take the remainder of exhaust gas in described reaction chamber 200 away by off-gas pump 300.
As preferably, described tributary valve 110 and reaction chamber 200 are all positioned at heating jacket region, and in described reaction chamber 200, the chemical reaction temperature of carrier gas and reaction gas is 110 DEG C.
As preferably, the time passing into carrier gas and reaction gas in admission passage 100 is 5-10s, regulate tributary valve 110 to make carrier gas and reaction gas enter into reaction chamber 200 again and carry out chemical reaction, this set of time both can guarantee that entrapped air volume and impurity were extracted totally by off-gas pump 300, can avoid again too much gas waste simultaneously.
As preferably, the flow of described carrier gas is consistent with carrier gas flux during chemical reaction, and the flow of described reaction gas is consistent with reaction gas flow speed during chemical reaction.In other words, without the need to specially regulating the flow of carrier gas and reaction gas, operation is simple.
In sum, multi-pipeline liquid gasification of the present invention is reacted into film device flow controlling method of air, this multi-pipeline liquid gasification is reacted into film device and comprises many admission passages 100, off-gas pump 300 and reaction chamber 200, many admission passage 100 passes into reaction chamber 200 jointly, described off-gas pump 300 and reaction chamber 200 and the tributary valve 110 being positioned at admission passage 100 are connected, in admission passage 100, pass into carrier gas and reaction gas, entrapped air volume, impurity are siphoned away by off-gas pump by tributary valve 110; Then, regulate tributary valve 110 to make carrier gas and reaction gas enter into reaction chamber 200 to carry out chemical reaction, after having reacted, take the remainder of exhaust gas in described reaction chamber 200 away by off-gas pump 300.The present invention flows through the carrier gas of admission passage 100 and the flow direction of reaction gas before being started by optimization chemical reaction, it is made first to flow to tributary valve 110, and utilize off-gas pump 300 entrapped air volume and impurity to be taken away, instead of the method in conventional process formula, carrier gas and reaction gas being flowed directly into reaction chamber 200, reduce because the entrap bubble be trapped in after last processing procedure in admission passage 100 and impurity directly enter reaction chamber 200, effectively improve the particle performance after film forming.
Obviously, those skilled in the art can carry out various change and modification to invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (8)
1. a multi-pipeline liquid gasification is reacted into film device flow controlling method of air, this multi-pipeline liquid gasification is reacted into film device and comprises many admission passages, off-gas pump and reaction chamber, many admission passage passes into reaction chamber jointly, described off-gas pump and reaction chamber and the tributary valve being positioned at admission passage are connected, it is characterized in that, in admission passage, pass into carrier gas and reaction gas, entrapped air volume, impurity are siphoned away by off-gas pump by tributary valve; Then, regulate tributary valve to make carrier gas and reaction gas enter into reaction chamber to carry out chemical reaction, after having reacted, take the remainder of exhaust gas in described reaction chamber away by off-gas pump.
2. multi-pipeline liquid gasification as claimed in claim 1 is reacted into film device flow controlling method of air, it is characterized in that, described admission passage comprises gas-carrier pipeline and reaction gas pipeline, and this gas-carrier pipeline and reaction gas pipe section overlap, and described tributary valve is arranged on the pipeline of coincidence.
3. multi-pipeline liquid gasification as claimed in claim 2 is reacted into film device flow controlling method of air, and it is characterized in that, the pipeline of this coincidence is also provided with high temperature purification device and variable valve, this high temperature purification device and variable valve are all arranged on the inlet end of tributary valve.
4. multi-pipeline liquid gasification as claimed in claim 3 is reacted into film device flow controlling method of air, it is characterized in that, is also provided with strainer and gas flow controller in described gas-carrier pipeline, be also provided with under meter in described reaction gas pipeline.
5. multi-pipeline liquid gasification as claimed in claim 4 is reacted into film device flow controlling method of air, it is characterized in that, describedly in admission passage, pass into carrier gas and reaction gas, entrapped air volume, impurity are comprised: first by the step that off-gas pump siphons away by tributary valve, open off-gas pump and regulate tributary valve, then, open the strainer in gas-carrier pipeline, gas flow controller and high temperature purification device, pass into carrier gas, make carrier gas enter into tributary valve after strainer, gas flow control valve and high temperature purification device; Then, then open the under meter on reaction gas pipeline, reaction gas is mixed with carrier gas through under meter in high temperature purification device, enters into tributary valve through variable valve, until the entrapped air volume in the valve of tributary, impurity siphon away by off-gas pump.
6. multi-pipeline liquid gasification as claimed in claim 5 is reacted into film device flow controlling method of air, and it is characterized in that, the purification temperature in described high temperature purification device is 160 DEG C.
7. multi-pipeline liquid gasification as claimed in claim 2 is reacted into film device flow controlling method of air, and it is characterized in that, described tributary valve and reaction chamber are all positioned at heating jacket region, and in described reaction chamber, the chemical reaction temperature of carrier gas and reaction gas is 110 DEG C.
8. multi-pipeline liquid gasification as claimed in claim 1 is reacted into film device flow controlling method of air, it is characterized in that, the time passing into carrier gas and reaction gas in admission passage is 5-10s, then regulates tributary valve to make carrier gas and reaction gas enter into reaction chamber to carry out chemical reaction.
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| CN201510494546.1A CN105088192B (en) | 2015-08-12 | 2015-08-12 | Multi-pipeline liquid gasification reacts film-forming apparatus flow controlling method of air |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107574423A (en) * | 2017-09-11 | 2018-01-12 | 德淮半导体有限公司 | Crystallizable device for atomizing liquid and method |
| CN110943003A (en) * | 2018-09-21 | 2020-03-31 | 北京北方华创微电子装备有限公司 | Process gas purging method |
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| US6363626B1 (en) * | 1999-04-01 | 2002-04-02 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method and device for treating items stored in containers and storage apparatus equipped with such a device |
| US20040237893A1 (en) * | 2003-05-29 | 2004-12-02 | Park In-Sung | Layer deposition methods |
| CN1825537A (en) * | 2005-01-19 | 2006-08-30 | 三星电子株式会社 | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus |
| US20110108128A1 (en) * | 2008-07-04 | 2011-05-12 | Katsushi Kishimoto | Vacuum treatment apparatus and gas supply method |
| CN104160481A (en) * | 2012-03-09 | 2014-11-19 | 诺发系统公司 | Split pumping method, apparatus, and system |
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| US6231672B1 (en) * | 1998-05-18 | 2001-05-15 | Ips Ltd. | Apparatus for depositing thin films on semiconductor wafer by continuous gas injection |
| US6363626B1 (en) * | 1999-04-01 | 2002-04-02 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method and device for treating items stored in containers and storage apparatus equipped with such a device |
| US20040237893A1 (en) * | 2003-05-29 | 2004-12-02 | Park In-Sung | Layer deposition methods |
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| CN107574423A (en) * | 2017-09-11 | 2018-01-12 | 德淮半导体有限公司 | Crystallizable device for atomizing liquid and method |
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| CN110943003B (en) * | 2018-09-21 | 2023-08-18 | 北京北方华创微电子装备有限公司 | Process gas purging method |
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