CN105280828A - Organic light-emitting device of high-efficient phosphorescent material copper (I) complex based on heavy-atom effect - Google Patents
Organic light-emitting device of high-efficient phosphorescent material copper (I) complex based on heavy-atom effect Download PDFInfo
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Abstract
The invention relates to an organic light-emitting device of a high-efficient phosphorescent material copper (I) complex based on a heavy-atom effect, and belongs to the field of organic electroluminescent phosphorescent devices formed by small organic molecule material. The organic light-emitting device is a layered structure and successively comprises an indium tin oxid conductive film anode layer on a glass substrate coating, a hole injection layer, a hole injection transport layer, an electron barrier layer, a mixing luminescent layer, a hole barrier layer and electron transport layer, an electron injection layer, and a cathode layer. The thickness of the hole injection layer is from 1 to 10nm. The thickness of the hole injection transport layer is from 10 to 40nm. The thickness of the electron barrier layer is from 3 to 15nm. The thickness of the mixing luminescent layer is from 20 to 40nm. The thickness of the hole barrier layer and electron transport layer is from 25 to 40nm. The thickness of the electron injection layer (7) is 1nm. The thickness of the cathode layer is from 100 to 200nm. The organic light-emitting device is simple in manufacture process and low in cost, may mostly use organic material on the market, and is flexible in design because using a combination of multiple thin organic layers.
Description
Technical field
The invention belongs to the organic electroluminescence device be made up of organic small molecule material, particularly relate to high efficiency phosphorescent material copper (I) complex of heavy atoms effect organic electroluminescence device class device.
Background technology
Although OLED have studied for many years, because the many reasons in aspect such as material, device performance, technique also can not enter practical stage on a large scale, the development that the research and development of new material promote OLED for continuation is useful.Metal Phosphorescent complex is applied in EL field makes the efficiency of El element greatly improve, this mainly jumps because alter between effective system between the singlet state that causes of the strong SO coupling effect of metal Phosphorescent complex to triplet, cause the mixing of singlet state and triplet, decrease triplet radiation spin forbidden, the efficiency relative to common electroluminescent fluorescent materials four times can be produced.Phosphorescent complexes kind for OLED has a lot, as Ru (II), Os (II), Pt (II) and Ir etc.But due to the intellectual property of these metal organic phosphorescent materials reported and the price limit of the costliness widespread adoption of this kind of material, the electroluminescent phosphorescence metal complex therefore developing new cheapness remains very important.Light function Cu (I) complex is a bright spot of field of new in recent years, with the diversity of its structure, unique photochemistry, Photophysics, day by day show tempting application prospect in fields such as OLED, optical pickocff, nonlinear optical material (NLO), DSSC, thus the research and development of copper (I) the complex new material of cheap, environmental friendliness, structure diversity have just been necessary more.At present, based on the performance of the organic electroluminescence device of copper (I) complex for practical application, its efficiency is still very low, also needs to improve its performance further.
Summary of the invention
For prior art exist based on the intellectual properties of organic phosphorescent material such as Ru (II), Os (II), Pt (II) and Ir and the price limit of the costliness deficiency of the widespread adoption of this kind of material in OLEDs, we select cheap, environmental friendliness, structure diversity copper (I) complex new material; Phosphorescence performance again due to copper (I) complex new material is not enough, we adopt and introduce heavy atom substituting group to copper (I) complex new material, utilize the substituent heavy atoms effect of heavy atom to improve the performance of copper (I) complex new material.The invention provides a kind of organic electroluminescence device of high efficiency phosphorescent material copper (I) complex based on heavy atoms effect.
A kind of organic electroluminescence device of high efficiency phosphorescent material copper (I) complex based on heavy atoms effect, it is characterized in that: this organic electroluminescence device is layer structure, be followed successively by and hold concurrently electron transfer layer, electron injecting layer, negative electrode at the anode layer of glass substrate coat indium tin oxide conductive film, hole injection layer, hole note transport layer, electronic barrier layer, hybrid illuminating layer, hole blocking layer; The thickness of described hole injection layer is 1 ~ 10nm; Described hole note transport layer is 10 ~ 40nm to thickness; The thickness of described electronic barrier layer is 3 ~ 15nm; The thickness of described mixing hybrid illuminating layer is 20 ~ 40nm; The hold concurrently thickness of electron transfer layer of described hole blocking layer is 25 ~ 40nm; The thickness of described electron injecting layer is 1nm; The thickness of cathode layer is 100 ~ 200nm.
The material that described hole injection layer (2) adopts is 4,4', 4''-tri-[2-naphthylphenyl is amino] triphenylamine (2-TNATA).
The material that described electric hole note transport layer (3) adopts is N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines (NPB)
The material that described electronic barrier layer (4) adopts is 4,4', 4''-tri-[2-naphthylphenyl is amino] triphenylamine (2-TNATA).
The material that described hybrid illuminating layer (5) adopts is Cu (I) complex [Cu (DPEphos) (the PyPPCl)] BF having heavy atoms effect
4(Cu-E-Cl, DPEphos and PyPPCl represents respectively (2-diphenylphosphino) phenyl ether and (the chloro-pyridine of 5-) [1 ', 2 ': 2,3] pyrazine [5,6-f] 1,10-Phen) and the mixture of 4,4'-bis-(9-carbazole) biphenyl (CBP), the mass percent dopant concentration of Cu (I) complex is respectively 6%, 8% and 10%.
The described hole blocking layer material that electron transfer layer (7) adopts of holding concurrently is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBi)
The material that described electron injecting layer (7) adopts is lithium fluoride (LiF).
The material that described cathode layer (8) adopts is metallic aluminium (Al)
The invention has the beneficial effects as follows: organic electroluminescence device of the present invention is sandwich construction, adopt vacuum heat deposition method film forming, manufacture craft is simple, cost is low, can adopt all-band reverse optical detector, and owing to have employed thin multiple organic layer combinations, make device layout more flexible.
The present invention has the following advantages:
(1) cheap, the environmental friendliness of dopant
Copper (I) the complex new material of cheap, environmental friendliness, structure diversity, though have application in OLED, because its luminescent properties is not enough, limits it in application; We indicate and can, by introducing heavy atom substituting group to copper (I) complex new material, utilize the substituent heavy atoms effect of heavy atom to improve the performance of copper (I) complex new material research, and therefore its material source enriches.
(2) device architecture is easy to adjusting and optimizing, and preparation technology is simple
Because device of the present invention adopts small molecule material, adopt Vacuum sublimation film forming, device architecture is " sandwich " formula sandwich construction, and therefore device architecture is easy to adjusting and optimizing, and preparation technology is simple.All material is all adopt thermal evaporation film forming.
(3) volume is little, lightweight
Owing to present invention employs thin organic layer and metal electrode layer, the thickness of all functions layer is no more than 2 microns.
The organic electroluminescence device of high efficiency phosphorescent material copper (I) complex based on heavy atoms effect of the present invention can be widely used in science, industry and commercial field.
Accompanying drawing explanation
Below in conjunction with the drawings and the specific embodiments, the present invention will be further described.
Fig. 1 is the organic electroluminescence device structural representation of a kind of high efficiency phosphorescent material copper (I) complex based on heavy atoms effect of the present invention.
In figure: 1 be glass substrate coat indium tin oxide conductive film, 2 for hole injection layer, 3 for hole note transport layer, 4 for electronic barrier layer, 5 for hybrid illuminating layer, 6 for hole blocking layer hold concurrently electron transfer layer, 7 be electron injecting layer, 8 be cathode layer.
Fig. 2, [Cu (DPEphos) (PyPPCl)] BF used
4(Cu-E-Cl)
Fig. 3, [Cu (DPEphos) (PyPPCl)] BF
4time resolution launch attenuation curve and matched curve
Fig. 4, the current efficiency of the device of different embodiment
Embodiment
The organic electroluminescence device of high efficiency phosphorescent material copper (I) complex based on heavy atoms effect of the present invention is sandwich construction, adopt vacuum heat deposition method film forming, the ITO electro-conductive glass of 20 Ω/ is adopted to be substrate, it is cleaned repeatedly with acetone, glass cleaner (TFD-7), deionized water, then uses acetone and deionized water Ultrasonic Cleaning successively.Cleaned ITO electro-conductive glass UV ozone process, is then placed in the comprehensive depositing system of organic electroluminescent.Each functional layer is all 2 ~ 3 × 10
-4evaporation film-forming under Pa, the evaporation rate of plain organic layer controls at ~ 0.2nm/s, and during doping, host material controls at ~ 0.4nm/s, and dopant controls to control respectively at ~ 0.05nm/s and ~ 1nm/s at the evaporation rate of ~ 0.002nm/s, LiF and Al electrode.Film thickness is monitored by quartz oscillation.
Technical scheme: the present invention is layer structure, is followed successively by and holds concurrently electron transfer layer 6, electron injecting layer 7, cathode layer 8 at the anode layer 1 of glass substrate coat indium tin oxide conductive film, hole injection layer 2, hole note transmitting layer 3, electronic barrier layer 4, hybrid illuminating layer 5, hole blocking layer.Electricity hybrid illuminating layer 5 and hole blocking layer electron transfer layer 6 of holding concurrently constitutes first exciton and generates interface.Here, under certain applied voltage, hybrid illuminating layer 5 also may constitute second exciton with electronic barrier layer 4 and generate interface.Functional layer is backward that hole blocking layer is held concurrently electric transmission, electron injecting layer and negative electrode again.The material that hole injection layer adopts is triphenylamine derivative, and thickness is 1 ~ 10nm; The material that hole note transport layer adopts is diamine derivative (diaminederivative), and thickness is 10 ~ 40nm; The material that electronic barrier layer adopts is triphenylamine derivative, and thickness is 3 ~ 15nm; Hybrid illuminating layer employing mass fraction is the CBP (x is respectively 6,8,10) of Cu (I) the complex Cu-E-Cl of X% heavy atoms effect, and thickness is 20 ~ 40nm; The hold concurrently material of electron transfer layer of hole blocking layer is TPBi, and thickness is 25 ~ 40nm; Electron injecting layer material is LiF, and thickness is 1nm; Cathode layer materials is metallic aluminium thickness is 100 ~ 200nm.
Preparation method of the present invention: deposition of hole implanted layer on the anode layer of glass substrate coat indium tin oxide conductive film; Deposition of hole note transport layer on hole injection layer; Electronic barrier layer is deposited on the note transport layer of hole; Then adopt double source co-electrodeposition method to prepare hybrid illuminating layer above; Above, hold concurrently electron transfer layer in deposition of hole barrier layer afterwards; Finally deposit electron injecting layer and cathode layer; Above-mentioned each layer all adopts vacuum heat deposition technique.
Anode layer selects the tin indium oxide ITO nesa coating of 20 Ω/; Hole injection layer the selection of material is 2-TNATA, and thickness chooses 1 ~ 10nm; Hole note transport layer selects NPB, and thickness chooses 10 ~ 40nm; Electronic barrier layer the selection of material is 2-TNATA, and thickness chooses 3 ~ 15nm; Hybrid illuminating layer selects the Cu-E-Cl dopant material of heavy atoms effect and material of main part CBP to mix, and the mass percent dopant concentration of Cu-E-Cl is respectively 6%, 8% and 10%, and thickness chooses 20 ~ 40nm; Hole blocking layer electron transport layer materials of holding concurrently selects TPBi, and thickness is 25 ~ 40nm; Electron injecting layer material is selected as LiF, and thickness is 1nm; Cathode layer the selection of material is metallic aluminium thickness is 100 ~ 200nm.
The device be successful makes anode and negative electrode respectively with tin indium oxide ITO and silver layer, and luminescence is penetrated from device anode side.Luminance-current-voltage curve is by Keithley-2400 power supply and corrected
luminance meter BM-7 measures acquisition simultaneously.All tests are all carried out under atmosphere at room temperature environment, and device does not encapsulate.
Embodiment 1:
Select the device architecture shown in Fig. 1: in the present embodiment, adopt the ITO electro-conductive glass of 20 Ω/ to be substrate, it is cleaned repeatedly with acetone, glass cleaner (TFD-7), deionized water, then uses acetone and deionized water Ultrasonic Cleaning successively.Cleaned ITO electro-conductive glass UV ozone process, is then placed in the comprehensive depositing system of organic electroluminescent.First at high vacuum (2 ~ 3x10
-4handkerchief) under, on nesa coating ITO, deposit a layer thickness is 5nm hole injection layer 2-TNATA, and the material of hole note transmitting layer 3 adopts NPB; Then on the note transmitting layer 3 of hole, deposit the electronic barrier layer 4 of 30nm, the material of electronic barrier layer 4 adopts 2-TNATA; Electronic barrier layer 4 deposits the hybrid illuminating layer 5 of 30nm, the material of hybrid illuminating layer 5 adopts has the Cu-E-Cl dopant material of heavy atoms effect and material of main part CBP to mix, and the mass percent dopant concentration of Cu-E-Cl is respectively 6%; Electric hybrid illuminating layer 5 deposits 40nm hole blocking layer to hold concurrently electron transfer layer 6, the material of exciton barrier-layer 6 adopts TPBi; On hole blocking layer holds concurrently electron transfer layer 6, deposit 1nm electron injecting layer 7, the material of electron injecting layer 7 adopts LiF; Finally on electron injecting layer 7, deposit 100nm cathode layer 8, the material of cathode layer 8 adopts metal A l.Above-mentioned all films all adopt thermal evaporation process to deposit.The thickness of each layer uses film thickness monitoring instrument to monitor.The device be successful makes anode and negative electrode respectively with tin indium oxide ITO and silver layer, and luminescence is penetrated from device anode side.Luminance-current-voltage curve is by Keithley-2400 power supply and corrected
luminance meter BM-7 measures acquisition simultaneously.All tests are all carried out under atmosphere at room temperature environment, and device does not encapsulate.Above-mentioned method of measurement is adopted to record result as follows: it is 3.5V that device opens bright voltage; Device is at 12.6V, and electric current is 412.27mA/cm
2time, reach high-high brightness 4320cd/m
2; Electric current is at 0.13mA/cm
2time maximum, current efficiency is maximum, is 13.5cd/A, and power efficiency is also maximum, is 9.4lm/W.When voltage is 8V, EL spectral emissions master is all being positioned at 551nm.
Embodiment 2:
Select the device architecture shown in Fig. 1: in the present embodiment, adopt the ITO electro-conductive glass of 20 Ω/ to be substrate, it is cleaned repeatedly with acetone, glass cleaner (TFD-7), deionized water, then uses acetone and deionized water Ultrasonic Cleaning successively.Cleaned ITO electro-conductive glass UV ozone process, is then placed in the comprehensive depositing system of organic electroluminescent.First at high vacuum (2 ~ 3x10
-4handkerchief) under, on nesa coating ITO, deposit a layer thickness is 5nm hole injection layer 2-TNATA, and the material of hole note transmitting layer 3 adopts NPB; Then on the note transmitting layer 3 of hole, deposit the electronic barrier layer 4 of 30nm, the material of electronic barrier layer 4 adopts 2-TNATA; Electronic barrier layer 4 deposits the hybrid illuminating layer 5 of 30nm, the material of hybrid illuminating layer 5 adopts has the Cu-E-Cl dopant material of heavy atoms effect and material of main part CBP to mix, and the mass percent dopant concentration of Cu-E-Cl is respectively 8%; Electric hybrid illuminating layer 5 deposits 40nm hole blocking layer to hold concurrently electron transfer layer 6, the material of exciton barrier-layer 6 adopts TPBi; On hole blocking layer holds concurrently electron transfer layer 6, deposit 1nm electron injecting layer 7, the material of electron injecting layer 7 adopts LiF; Finally on electron injecting layer 7, deposit 100nm cathode layer 8, the material of cathode layer 8 adopts metal A l.Above-mentioned all films all adopt thermal evaporation process to deposit.The thickness of each layer uses film thickness monitoring instrument to monitor.The device be successful makes anode and negative electrode respectively with tin indium oxide ITO and silver layer, and luminescence is penetrated from device anode side.Luminance-current-voltage curve is by Keithley-2400 power supply and corrected
luminance meter BM-7 measures acquisition simultaneously.All tests are all carried out under atmosphere at room temperature environment, and device does not encapsulate.The method of measurement described in embodiment 1 is adopted to record result as follows: it is 3.0V that device opens bright voltage; Device is at 12.5V, and electric current is 240.33mA/cm
2time, reach high-high brightness 4320cd/m
2; Electric current is at 0.17mA/cm
2time maximum, current efficiency is maximum, is 20.5cd/A, and power efficiency is also maximum, is 14.27lm/W; At 1mA/cm
2time, efficiency is 17cd/A, 10mA/cm
2time, efficiency is 10.0cd/A.When voltage is increased to 13V from 7V, EL spectral emissions master is all being positioned at 552-554nm scope, and peak type does not also almost change.
Embodiment 3:
Select the device architecture shown in Fig. 1: in the present embodiment, adopt the ITO electro-conductive glass of 20 Ω/ to be substrate, it is cleaned repeatedly with acetone, glass cleaner (TFD-7), deionized water, then uses acetone and deionized water Ultrasonic Cleaning successively.Cleaned ITO electro-conductive glass UV ozone process, is then placed in the comprehensive depositing system of organic electroluminescent.First at high vacuum (2 ~ 3x10
-4handkerchief) under, on nesa coating ITO, deposit a layer thickness is 5nm hole injection layer 2-TNATA, and the material of hole note transmitting layer 3 adopts NPB; Then on the note transmitting layer 3 of hole, deposit the electronic barrier layer 4 of 30nm, the material of electronic barrier layer 4 adopts 2-TNATA; Electronic barrier layer 4 deposits the hybrid illuminating layer 5 of 30nm, the material of hybrid illuminating layer 5 adopts has the Cu-E-Cl dopant material of heavy atoms effect and material of main part CBP to mix, and the mass percent dopant concentration of Cu-E-Cl is respectively 10%; Electric hybrid illuminating layer 5 deposits 40nm hole blocking layer to hold concurrently electron transfer layer 6, the material of exciton barrier-layer 6 adopts TPBi; On hole blocking layer holds concurrently electron transfer layer 6, deposit 1nm electron injecting layer 7, the material of electron injecting layer 7 adopts LiF; Finally on electron injecting layer 7, deposit 100nm cathode layer 8, the material of cathode layer 8 adopts metal A l.Above-mentioned all films all adopt thermal evaporation process to deposit.The thickness of each layer uses film thickness monitoring instrument to monitor.The device be successful makes anode and negative electrode respectively with tin indium oxide ITO and silver layer, and luminescence is penetrated from device anode side.Luminance-current-voltage curve is by Keithley-2400 power supply and corrected
luminance meter BM-7 measures acquisition simultaneously.All tests are all carried out under atmosphere at room temperature environment, and device does not encapsulate.The method of measurement described in embodiment 1 is adopted to record result as follows: it is 3.5V that device opens bright voltage; Device is at 13.1V, and electric current is 404.23mA/cm
2time, reach high-high brightness 4808cd/m
2; Electric current is at 0.13mA/cm
2time maximum, current efficiency is maximum, is 16.4cd/A, and power efficiency is also maximum, is 11.4lm/W.When voltage is 8V, EL spectral emissions master is all being positioned at 553nm.
Claims (8)
1. the organic electroluminescence device based on high efficiency phosphorescent material copper (I) complex of heavy atoms effect, the life-span of phosphor material copper (I) complex is 0.62 μ s, when the doping content of phosphor material copper (I) complex is 6%, device is when applied voltage 8V, the electroluminescence emission main peak of this device is 551nm, and the maximum current efficiency of device and brightness are respectively in order to 13.5cd/A and 4900cd/m
2; When the doping content of phosphor material copper (I) complex is 10%, device is when applied voltage 8V, and the electroluminescence emission main peak of this device is 553nm, and the maximum current efficiency of device and brightness are respectively in order to 16.4cd/A and 4808cd/m
2; When the optimum doping concentration of phosphor material copper (I) complex is 8%, device is when applied voltage 7-13V, the electroluminescence emission main peak of this device is 552-554nm, and the maximum current efficiency of device and brightness are respectively in order to 20.5cd/A and 4320cd/m
2, all higher than the performance of the phosphorescent devices of current Cu (I) phosphorescent complexes reported.It is characterized in that: this organic electroluminescence device is layer structure, be followed successively by and hold concurrently electron transfer layer (6), electron injecting layer (7), negative electrode (8) at the anode layer (1) of glass substrate coat indium tin oxide conductive film, hole injection layer (2), hole note transport layer (3), electronic barrier layer (4), hybrid illuminating layer (5), hole blocking layer; The thickness of described hole injection layer (2) is 1 ~ 10nm; Described hole note transport layer (3) is 10 ~ 40nm to thickness; The thickness of described electronic barrier layer (4) is 3 ~ 15nm; The thickness of described mixing hybrid illuminating layer is 20 ~ 40nm; The hold concurrently thickness of electron transfer layer (6) of described hole blocking layer is 25 ~ 40nm; The thickness of described electron injecting layer (7) is 1nm; The thickness of cathode layer (8) is 100 ~ 200nm.
2. the organic electroluminescence device of a kind of high efficiency phosphorescent material copper (I) complex based on heavy atoms effect according to claim 1, it is characterized in that: the material that described hole injection layer (2) adopts is 4,4', 4''-tri-[2-naphthylphenyl is amino] triphenylamine (2-TNATA).
3. the organic electroluminescence device of a kind of high efficiency phosphorescent material copper (I) complex based on heavy atoms effect according to claim 1, it is characterized in that: the material that described electric hole note transport layer (3) adopts is N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines (NPB).
4. the organic electroluminescence device of a kind of high efficiency phosphorescent material copper (I) complex based on heavy atoms effect according to claim 1, it is characterized in that: the material that described electronic barrier layer (4) adopts is 4,4', 4''-tri-[2-naphthylphenyl is amino] triphenylamine (2-TNATA).
5. the organic electroluminescence device of a kind of high efficiency phosphorescent material copper (I) complex based on heavy atoms effect according to claim 1, is characterized in that: the material that described hybrid illuminating layer (5) adopts is Cu (I) complex [Cu (DPEphos) (the PyPPCl)] BF having heavy atoms effect
4(Cu-E-Cl, DPEphos and PyPPCl represents respectively (2-diphenylphosphino) phenyl ether and (the chloro-pyridine of 5-) [1 ', 2 ': 2,3] pyrazine [5,6-f] 1,10-Phen) and the mixture of 4,4'-bis-(9-carbazole) biphenyl (CBP), the mass percent dopant concentration of Cu (I) complex is respectively 6%, 8% and 10%.
6. the organic electroluminescence device of a kind of high efficiency phosphorescent material copper (I) complex based on heavy atoms effect according to claim 1, it is characterized in that: the described hole blocking layer material that electron transfer layer (7) adopts of holding concurrently is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBi).
7. the organic electroluminescence device of a kind of high efficiency phosphorescent material copper (I) complex based on heavy atoms effect according to claim 1, is characterized in that: the material that described electron injecting layer (7) adopts is lithium fluoride (LiF).
8. the organic electroluminescence device of a kind of high efficiency phosphorescent material copper (I) complex based on heavy atoms effect according to claim 1, is characterized in that: the material that described cathode layer (8) adopts is metallic aluminium (Al).
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172692A (en) * | 2016-12-07 | 2018-06-15 | 华中科技大学 | Organic luminescent device based on outer heavy atom and thermotropic delayed fluorescence synergistic effect |
| CN110121804A (en) * | 2016-12-29 | 2019-08-13 | 株式会社村田制作所 | Negative electrode active material and its manufacturing method, cathode, battery, battery pack, electronic equipment, electric vehicle, electrical storage device and electric system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050212419A1 (en) * | 2004-03-23 | 2005-09-29 | Eastman Kodak Company | Encapsulating oled devices |
| CN103594657A (en) * | 2012-08-17 | 2014-02-19 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN103594634A (en) * | 2012-08-17 | 2014-02-19 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
-
2014
- 2014-07-21 CN CN201410348231.1A patent/CN105280828A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050212419A1 (en) * | 2004-03-23 | 2005-09-29 | Eastman Kodak Company | Encapsulating oled devices |
| CN103594657A (en) * | 2012-08-17 | 2014-02-19 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN103594634A (en) * | 2012-08-17 | 2014-02-19 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 徐占林等: "于新型磷光铜(I)配合物的高效绿光有机电致发光器件", 《第七届中国功能材料及其应用学术会议论文集》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172692A (en) * | 2016-12-07 | 2018-06-15 | 华中科技大学 | Organic luminescent device based on outer heavy atom and thermotropic delayed fluorescence synergistic effect |
| CN110121804A (en) * | 2016-12-29 | 2019-08-13 | 株式会社村田制作所 | Negative electrode active material and its manufacturing method, cathode, battery, battery pack, electronic equipment, electric vehicle, electrical storage device and electric system |
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Application publication date: 20160127 |