CN105397613A - Method for maintaining balance of grinding rate of grinding machine table - Google Patents

Method for maintaining balance of grinding rate of grinding machine table Download PDF

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Publication number
CN105397613A
CN105397613A CN201510703181.9A CN201510703181A CN105397613A CN 105397613 A CN105397613 A CN 105397613A CN 201510703181 A CN201510703181 A CN 201510703181A CN 105397613 A CN105397613 A CN 105397613A
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China
Prior art keywords
grinding
pad
rate
abrasive disk
head
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CN201510703181.9A
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Chinese (zh)
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CN105397613B (en
Inventor
吴科
文静
张传民
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Shanghai Huali Microelectronics Corp
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Shanghai Huali Microelectronics Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes

Abstract

The invention relates to the field of chemical mechanical grinding, in particular to a method for maintaining balance of the grinding rate of a grinding machine table. The grinding machine table comprises a grinding disc, a grinding pad, a grinding head and a grinding pad dresser. The method comprises the steps that a semiconductor device to be ground is provided, the semiconductor device is placed on the grinding machine table, and the chemical mechanical grinding technique is conducted on the semiconductor device. The pressurization function of the grinding head is adopted, and the loss of the grinding rate due to the change of the service life of the grinding pad and the grinding pad dresser is made up by adjusting the pressure on the grinding disc by the grinding head, and thus the balance of the grinding rate is maintained.

Description

A kind of method keeping grinder station grinding rate to balance
Technical field
The present invention relates to cmp field, be specifically related to a kind of method keeping grinder station grinding rate to balance.
Background technology
In cmp (CMP) process, along with grinding pad and the increase in grinding mat trimmer life-span (Lifetime), the raceway groove on grinding pad surface shoals gradually, on grinding mat trimmer, the sharpness of diamond wheel also reduces gradually, the grinding rate of silicon chip also can reduce that (grinding rate is as shown in Figure 2 with the variation tendency line in abrasive disk life-span gradually, and the rate of grinding shown in Fig. 3 is with the variation tendency line of service-life of grinding pad), therefore along with PMcycle grinding rate also can present cyclically-varying (as shown in Figure 1).But along with the raising of chip integration, live width narrows, after grinding, the window of silicon wafer thickness is also more and more less, so also more and more higher for grinding rate stability requirement.We can use product for the continuous Pirun of board to correct the change of grinding rate at present, such sacrifice production capacity, equally also sacrificial section produces the quality of sheet, the risk that Pirun product sheet is scrapped simultaneously also can improve, so need to make grinding rate in CMP process of lapping tend towards stability, after guarantee silicon chip grinding, thickness stablizes thus ensures product quality.
Grinding rate in CMP process can be expressed by Preston empirical equation, i.e. R=kPv, and wherein R is grinding rate, and P is added pressure, and v is the relative velocity of silicon chip and polishing pad, and k is relevant with grinding pad, lapping liquid, grinding mat trimmer etc.In a PMcycle, k in Preston empirical equation reduces gradually, so the present invention expects the PMcycle effect by grinding head, the balance that the corresponding increase of abrasive disk (Platen) pressure maintains grinding rate being solved to grinding rate as shown in Figure 1.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of method keeping grinder station grinding rate to balance, by increasing grinding head, the loss along with lifetime change grinding rate of grinding pad and grinding mat trimmer is made up for the pressure of abrasive disk, thus reach the balance of grinding rate.
Technical purpose of the present invention is realized by following technological means:
The method keeping grinder station grinding rate to balance, it is characterized in that, described grinder station comprises abrasive disk, grinding pad, grinding head and grinding mat trimmer, described method comprises:
The semiconductor devices that one is to be ground is provided;
Described semiconductor devices is positioned on described grinder station, to carry out chemical mechanical milling tech to described semiconductor devices; Wherein
Utilize the pressurization function of described grinding head, by adjustment grinding head for the pressure of abrasive disk, make up the loss of the grinding rate that grinding pad causes along with lifetime change with grinding mat trimmer, thus the balance of maintenance grinding rate.
Preferably, above-mentioned method, wherein, adjust the pressure of described grinding head to abrasive disk according to a formula, to keep the balance of grinding rate, described formula is specially:
Wherein, Pi be in process of lapping grinding head to the real-time pressure of abrasive disk;
P beginfor grinding starts the initial pressure of front grinding head to abrasive disk;
R beginfor the initial grinding rate of grinding pad and grinding mat trimmer;
R eventuallyfor grinding pad and grinding mat trimmer reach grinding processing procedure allow maximum service time time grinding rate;
K is a constant;
V is the grinding rate of grinding pad relative to abrasive disk;
T iPadfor the service time that grinding pad is real-time;
T iDiskfor the service time that grinding mat trimmer is real-time;
T padfor the maximum service time that grinding pad allows in grinding processing procedure;
T diskfor the maximum service time that grinding mat trimmer allows in grinding processing procedure;
A is the scale parameter that grinding pad and grinding mat trimmer are contributed for grinding rate.
Preferably, above-mentioned method, wherein, constant k is relevant with grinding layer hardness, polishing fluid and polishing pad.
Preferably, above-mentioned method, wherein, parameter a is relevant with the grinding rate of grinding mat trimmer with the soft or hard of grinding pad.
Preferably, above-mentioned method, wherein, described grinding pad is used for bearing semiconductor device, to carry out cmp to the surface of described semiconductor devices.
Preferably, above-mentioned method, wherein, described abrasive disk is used for grinding pad described in fixed bearing.
Preferably, above-mentioned method, wherein, described grinding head is for grinding described semiconductor devices pressing on described grinding pad.
Preferably, above-mentioned method, wherein, described grinding mat trimmer is for repairing described grinding pad.
Compared with prior art, advantage of the present invention is:
A kind of method keeping grinder station grinding rate to balance provided by the invention, makes up the loss along with lifetime change grinding rate of grinding pad and grinding mat trimmer by increasing grinding head for the pressure of abrasive disk, thus reaches the balance of grinding rate.
Accompanying drawing explanation
Fig. 1 is the flow chart of steps of the method for maintenance grinder station grinding rate of the present invention balance;
Fig. 2 be in embodiment grinding rate along with PMcycle cyclically-varying tendency chart;
Fig. 3 be in embodiment grinding rate with the variation tendency line in abrasive disk life-span;
Fig. 4 be in embodiment grinding rate with the variation tendency line of service-life of grinding pad;
Fig. 5 be in embodiment grinding rate with the pressure trend line of grinding head to abrasive disk.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the invention will be further described, but not as limiting to the invention.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite of not making creative work, all belongs to the scope of protection of the invention.
It should be noted that, when not conflicting, the embodiment in the present invention and the feature in embodiment can combine mutually.
As shown in Figure 1, the method that the present invention keeps grinder station grinding rate to balance, mainly comprises the following steps: provide the semiconductor devices that is to be ground; Semiconductor devices is positioned on grinder station, chemical mechanical milling tech is carried out to this semiconductor devices; Wherein, utilize the pressurization function of grinding head, by adjustment grinding head for the pressure of abrasive disk, make up the loss of the grinding rate that grinding pad causes along with lifetime change with grinding mat trimmer, thus the balance of maintenance grinding rate.
As a preferred embodiment, grinder station of the present invention comprises abrasive disk, grinding pad, grinding head and grinding mat trimmer.Grinding pad is used for bearing semiconductor device, to carry out cmp to the surface of semiconductor devices; Abrasive disk is used for fixed bearing grinding pad; Grinding head is for grinding semiconductor devices pressing on grinding pad; Grinding mat trimmer is for repairing grinding pad.
Concrete, the formula that the pressure change of grinding head to abrasive disk changes with grinding pad and grinding mat trimmer lifetime is as follows:
Wherein: Pi be grinding head for abrasive disk real-time pressure (such as, 8 cun of silicon chip grinding board Pi such as Mirra & Mesa are mainly to the pressure of Membrane, and the corresponding adjustment of percentage that Intertuber and RetainingRing declines with the pressure increase of Membrane, 12 cun of silicon chip grinding board Pi such as MirraLK are mainly to the pressure of Zone5, and the corresponding adjustment of percentage that declines with the pressure increase of Zone5 of the pressure of Zone1 ~ 4 and RetainingRing); P beginfor the pressure (being the existing pressure of Membrane equally for 8 cun of silicon chip grinding boards such as Mirra & Mesa, is the existing pressure of Zone5 for 12 cun of silicon chip grinding boards such as MirraLK) of existing grinding formula; R beginfor the initial grinding rate of new grinding pad and new grinding mat trimmer; R eventuallyfor grinding pad and grinding mat trimmer reach grinding processing procedure allow maximum service time time grinding rate; K is the constant relevant with grinder station and chemical mechanical milling tech, relevant with grinding layer hardness, polishing fluid and polishing pad etc.; V is the relative velocity of grinding pad relative to abrasive disk; t iPadfor the service time that grinding pad is real-time; t iDiskfor the service time that grinding mat trimmer is real-time; T padfor the maximum service time that grinding pad allows in grinding processing procedure; T diskfor the maximum service time that grinding mat trimmer allows in grinding processing procedure; A is the scale parameter that grinding pad and grinding mat trimmer are contributed for grinding rate, and this parameter is relevant with the CutRate of grinding mat trimmer with the soft or hard of grinding pad.
The service time of setting forth along with grinding pad and grinding mat trimmer below in conjunction with a specific embodiment changes, and increases the pressure of grinding head for abrasive disk according to above-mentioned formula, to maintain the balance of grinding rate.
When the method uses a kind of silicon oxide film of doping, the existing existing pressure with grinding formula film (Membrane) is 1.6psi (i.e. P beginfor 1.6psi), then as reference pressure, use 1.3psi respectively, 1.5psi, 1.7psi, 2.0psi are the grinding rate that the pressure of Membrane carries out that this doped silicon sull is fixed the grinding collection different pressures of time (60s).Then grinding rate is drawn thus with grinding head to abrasive disk pressure trend, then carry out linear fit and obtain Trendline and fitting formula (grinding rate is as shown in Figure 5 with the pressure trend line of grinding head to abrasive disk), being 0.9991 from fitting coefficient R2 in figure, is linear fit.It is same according to Preston empirical equation R=kPv,
R begin-R eventually=kP beginv-kP eventuallyv=1845.1P begin+ 509.92-1845.1P eventually-509.92 (1)
(P eventually-P begin) kV=(P eventually-P begin) 1845.1 (2)
kV＝1845.1(3)
And T padthe maximum service time allowed in grinding processing procedure for grinding pad is 45h, T diskfor the 35h maximum service time that grinding mat trimmer allows in grinding processing procedure, be about 3350A/min from the grinding rate of Fig. 3 (grinding rate is with the variation tendency line in abrasive disk life-span) and Fig. 4 (grinding rate is with the variation tendency line of service-life of grinding pad) known new grinding pad (Pad) and new abrasive disk (Disk) among PMcycle, grinding rate when Pad and Disk arrives maximum service time is about 3100A/min, and a is the scale parameter that grinding pad and grinding mat trimmer are contributed for grinding rate, can to try to achieve with the slope of the variation tendency line of PadLifetime with Fig. 4 grinding rate in the slope ratio of the variation tendency line of DiskLifetime according to Fig. 3 grinding rate and be about 1.42.Bring all parameters into formula
P i = 1.6 + 3350 - 3100 1845.1 * t i P a d + 1.42 * t i D i s k 45 + 1.42 * 35 - - - ( 5 )
P i＝1.6+0.00143*t iPad+0.00203*t iDisk(6)
So in this kind of thin-film grinding process, the pressure of grinding head regulates the balance that can keep process of lapping medium-rate according to formula (6).
Should be noted that time, grinding head itself has the function of pressurization, can by grinding head indoor design one section of program of carrying out pressurizeing according to above-mentioned formula, or grinding head is connected with a control panel, pressing time and the degree of grinding head is controlled by control panel, also namely can by accomplished in many ways grinding head according to the pressurized operation of above-mentioned formula, the present invention is not restricted this.
In sum, a kind of method keeping grinder station grinding rate to balance provided by the invention, makes up the loss along with lifetime change grinding rate of grinding pad and grinding mat trimmer by increasing grinding head for the pressure of abrasive disk, thus reaches the balance of grinding rate.
It should be appreciated by those skilled in the art that those skilled in the art can realize various change case in conjunction with prior art and above-described embodiment, such change case does not affect flesh and blood of the present invention, does not repeat them here.
Above preferred embodiment of the present invention is described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, the equipment wherein do not described in detail to the greatest extent and structure are construed as to be implemented with the common mode in this area; Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or being revised as the Equivalent embodiments of equivalent variations, this does not affect flesh and blood of the present invention.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.

Claims (8)

1. the method keeping grinder station grinding rate to balance, it is characterized in that, described grinder station comprises abrasive disk, grinding pad, grinding head and grinding mat trimmer, described method comprises:
The semiconductor devices that one is to be ground is provided;
Described semiconductor devices is positioned on described grinder station, to carry out chemical mechanical milling tech to described semiconductor devices; Wherein
Utilize the pressurization function of described grinding head, by adjustment grinding head for the pressure of abrasive disk, make up the loss of the grinding rate that grinding pad causes along with lifetime change with grinding mat trimmer, thus the balance of maintenance grinding rate.
2. method according to claim 1, is characterized in that, adjusts the pressure of described grinding head to abrasive disk according to a formula, and to keep the balance of grinding rate, described formula is specially:
Wherein, Pi be in process of lapping grinding head to the real-time pressure of abrasive disk;
P beginfor grinding starts the initial pressure of front grinding head to abrasive disk;
R beginfor the initial grinding rate of grinding pad and grinding mat trimmer;
R eventuallyfor grinding pad and grinding mat trimmer reach grinding processing procedure allow maximum service time time grinding rate;
K is a constant;
V is the grinding rate of grinding pad relative to abrasive disk;
T iPadfor the service time that grinding pad is real-time;
T iDiskfor the service time that grinding mat trimmer is real-time;
T padfor the maximum service time that grinding pad allows in grinding processing procedure;
T diskfor the maximum service time that grinding mat trimmer allows in grinding processing procedure;
A is the scale parameter that grinding pad and grinding mat trimmer are contributed for grinding rate.
3. method according to claim 2, is characterized in that, constant k is relevant with grinding layer hardness, polishing fluid and polishing pad.
4. method according to claim 2, is characterized in that, parameter a is relevant with the grinding rate of grinding mat trimmer with the soft or hard of grinding pad.
5. method according to claim 1, is characterized in that, described grinding pad is used for bearing semiconductor device, to carry out cmp to the surface of described semiconductor devices.
6. method according to claim 1, is characterized in that, described abrasive disk is used for grinding pad described in fixed bearing.
7. method according to claim 1, is characterized in that, described grinding head is for grinding described semiconductor devices pressing on described grinding pad.
8. method according to claim 1, is characterized in that, described grinding mat trimmer is for repairing described grinding pad.
CN201510703181.9A 2015-10-26 2015-10-26 A kind of method for keeping grinder station grinding rate balance Active CN105397613B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107900788A (en) * 2017-11-24 2018-04-13 上海华力微电子有限公司 A kind of method for improving inter-level dielectric grinding technics thickness stability
CN113547446A (en) * 2020-04-03 2021-10-26 中芯国际集成电路制造(上海)有限公司 Method for correcting grinding rate
CN114734372A (en) * 2022-03-28 2022-07-12 北京烁科精微电子装备有限公司 Wafer grinding method

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CN102509712A (en) * 2011-11-29 2012-06-20 中国科学院微电子研究所 Method for determining dynamic pressure distribution and grinding removal rate of chemical mechanical polishing grinding liquid
US20130210323A1 (en) * 2012-02-15 2013-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. CMP Pad Cleaning Apparatus
CN104742008A (en) * 2013-12-27 2015-07-01 中芯国际集成电路制造(上海)有限公司 Chemical mechanical grinding method and chemical mechanical grinding device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5536202A (en) * 1994-07-27 1996-07-16 Texas Instruments Incorporated Semiconductor substrate conditioning head having a plurality of geometries formed in a surface thereof for pad conditioning during chemical-mechanical polish
WO2002009907A1 (en) * 2000-07-31 2002-02-07 Asml Us, Inc. Method of chemical mechanical polishing
CN1981992A (en) * 2005-12-15 2007-06-20 上海华虹Nec电子有限公司 Method for automatically adjusting silicon wafer grinding pressure of chemical-mechanical polisher
CN101116955A (en) * 2006-08-02 2008-02-06 力晶半导体股份有限公司 operating parameter self-feedback method for chemical mechanical lapping device and system for controlling the same
CN102509712A (en) * 2011-11-29 2012-06-20 中国科学院微电子研究所 Method for determining dynamic pressure distribution and grinding removal rate of chemical mechanical polishing grinding liquid
US20130210323A1 (en) * 2012-02-15 2013-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. CMP Pad Cleaning Apparatus
CN104742008A (en) * 2013-12-27 2015-07-01 中芯国际集成电路制造(上海)有限公司 Chemical mechanical grinding method and chemical mechanical grinding device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107900788A (en) * 2017-11-24 2018-04-13 上海华力微电子有限公司 A kind of method for improving inter-level dielectric grinding technics thickness stability
CN113547446A (en) * 2020-04-03 2021-10-26 中芯国际集成电路制造(上海)有限公司 Method for correcting grinding rate
CN113547446B (en) * 2020-04-03 2024-01-26 中芯国际集成电路制造(上海)有限公司 Polishing rate correction method
CN114734372A (en) * 2022-03-28 2022-07-12 北京烁科精微电子装备有限公司 Wafer grinding method

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