CN105405788A - Reaction chamber - Google Patents

Abstract

The invention provides a reaction chamber. The reaction chamber includes a process cavity, a detection cavity and a conveying device. The process cavity is used for carrying out thin film deposition process of a substrate; the detection cavity is used for detecting the thickness of a thin film deposited on the substrate; and a substrate conveying port is disposed between the process cavity and the detection cavity and used for enabling the connection of the process cavity and the detection cavity and allowing the substrate to pass through, and the conveying device is used for conveying the substrate between the process cavity and the detection cavity through the substrate conveying port. The reaction chamber provided by the invention can be used for detecting the actual thickness of the thin film deposited on the substrate after a process formula is completed and adjusting the process formula to deposit the thin film to a target thickness, so as to improve the yield; and besides, as the way of adjusting the process formula periodically based on a test piece in the prior art is not required, the yield can be improved, the test piece is not required, and the economic efficiency can thus be increased.

Description

A kind of reaction chamber

Technical field

The invention belongs to microelectronic processing technique field, be specifically related to a kind of reaction chamber.

Background technology

Quantity due to the transistor in high efficiency, highdensity integrated circuit rises to several ten million, the integrated high desnity metal interconnection line needing nearly more than ten layers of the signal of the active element of these substantial amounts, these metal interconnecting wires adopt the method depositing metal films of physical vapour deposition (PVD) (PhysicalVaporDeposition, hereinafter referred to as PVD) to realize usually.

Fig. 1 is the structural representation of the reaction chamber of existing PVD equipment.Refer to Fig. 1, reaction chamber 10 comprises the target 11 being arranged on reaction chamber top, it is connected with the power supply (not shown) being arranged on reaction chamber 1 outside, plasma is formed in order to the process gas in provocative reaction chamber, rotary magnet 12 is set above target 11, in order to plasma to be gathered in the below of target 11, lifting base 13 is also provided with in the bottom of reaction chamber, for carrying substrates S, plasma bombardment target 11, the metallic atom on target 11 surface is made to overflow and be deposited on the surface of substrate S, thus form film on the surface of substrate S.In actual applications, speed due to deposit film is along with the consumption of target changes, therefore, along with the carrying out of technique, in same time, the film thickness of deposition is not identical, for ensureing the film thickness needed for depositing operation, then the carrying out along with technique is needed to adjust the technological parameter (such as, process time) in technical recipe.

But, prior art can only periodically adjusting process formula in the following way: first according to initial process formula to the first test pieces deposit film, this first test pieces is shifted out reaction chamber and the actual film thickness using other equipment Inspections to deposit after having deposited, and judge that whether this actual film thickness is equal with target thickness, if not, adjusting process formula is carried out according to this actual film thickness and target thickness; Afterwards, again amended technical recipe is performed to the second test pieces, repeat above-mentioned steps until actual film thickness is equal with target thickness, could proceed to produce according to current process formula, this makes productivity ratio low and needs to expend test pieces, thus causes economic benefit low; And due to the actual film deposit thickness that can not detect substrate deposition after completing technical recipe and adjusting process formula deposits target thickness to make it, thus cause yields low.

Summary of the invention

The present invention is intended at least to solve one of technical problem existed in prior art, propose a kind of reaction chamber, it can detect the actual film deposit thickness of substrate deposition after completing technical recipe and adjusting process formula is deposited into target thickness to make it, thus can improve yields; And not need to adopt in prior art periodically based on the mode of test pieces adjusting process formula, thus not only can boost productivity, but also can not need to expend test pieces, thus can increase economic efficiency.

For one of solving the problem, the invention provides a kind of reaction chamber, comprising process cavity, test chamber and transmitting device, wherein, described process cavity is used for carrying out thin film deposition processes to substrate; Described test chamber is used for detection and is deposited on on-chip film thickness; Make the two be connected and the biography sheet mouth passed through for substrate in described process cavity with having between test chamber, described transmitting device is used for by described biography sheet mouth substrate transport between described process cavity and described test chamber.

Wherein, in described process cavity, be provided with the lifting base for carrying substrates; Described transmitting device comprises support ring and the first driving mechanism, described support ring is provided with the supporter for supporting described substrate, described first driving mechanism for driving described support ring by described biography sheet port transmission to the loading position in described process cavity, or by the detection position in described biography sheet port transmission extremely described test chamber; The internal diameter of described support ring is greater than the external diameter of described lifting base, when described support ring is positioned at described loading position, described lifting base is positioned at the orthographic projection of described support ring annular distance, risen in the annular distance of described support ring by described lifting base, to realize the described substrate be positioned on supporter to be passed on described lifting base; And, declined in the annular distance of support ring by described lifting base, to realize the substrate be placed on described lifting base to be passed on described strutting piece, and, when described lifting base drops to the below of described support ring, drive described support ring by the detection position in described biography sheet port transmission to described test chamber by described first driving mechanism.

Wherein, the minimum diameter of described supporter place circumference is less than or equal to the external diameter of described lifting base, and be provided with on the lateral wall of described lifting base along it axially and run through the groove of described lifting base thickness, described groove is corresponding with described supporter to be arranged; Be positioned at described loading position at described support ring, and described lifting base is done in the process of elevating movement, described supporter is elevated in the described groove corresponded.

Wherein, in described process cavity, be provided with the pedestal for carrying substrates; Described transmitting device comprises support ring, the first driving mechanism and the second driving mechanism, described support ring is provided with the supporter for supporting described substrate, described first driving mechanism for driving described support ring by described biography sheet port transmission to the loading position in described process cavity, or by the detection position in described biography sheet port transmission extremely described test chamber; Described second driving mechanism is elevated for driving described support ring; The internal diameter of described support ring is greater than the external diameter of described pedestal, and when described support ring is positioned at described loading position, described pedestal is positioned at the orthographic projection of described support ring annular distance, described second driving mechanism rises outside described pedestal by driving described support ring to be nested with, to realize the substrate be placed on described pedestal to be passed on described supporter, and, when described support ring is positioned at the rising of described pedestal, be driven through the detection position in described biography sheet port transmission to described test chamber by described first driving mechanism; And described second driving mechanism declines outside described pedestal by driving described support ring to be nested with, to realize described pedestal, the described substrate be positioned on supporter is held up.

Wherein, the minimum diameter of described supporter place circumference is less than or equal to the external diameter of described pedestal, and is provided with on the lateral wall of described pedestal along it axially and run through the groove of described base thickness, and described groove is corresponding with described supporter to be arranged; Be positioned at described loading position at described supporter at described support ring, and described second driving mechanism is done in the process of elevating movement by driving described support ring to be nested with outside described pedestal, described supporter is elevated in the described groove corresponded.

Wherein, described supporter comprises along the spaced multiple thimble of described support ring circumference.

Wherein, the minimum diameter of described supporter place circumference is greater than the external diameter of described pedestal and is less than the external diameter of described substrate.

Wherein, described test chamber is arranged on the sidewall of described process cavity.

Wherein, described test chamber comprises checkout gear and control device, and described checkout gear is arranged on the roof of described process cavity, for transmitting to described substrate upper surface, and is received from the signal of described substrate upper surface reflection and sends it to control device; Described control device is used for the actual (real) thickness of substrate surface deposit film according to the signal acquisition from described checkout gear, and judge that whether described actual (real) thickness is equal with target thickness, if, then control described transmitting device and described substrate is moved to described process cavity from described test chamber, and process ends; If not, then the technological parameter in technical recipe is adjusted, and control described transmitting device described substrate is moved to described process cavity from described test chamber, and the technical recipe performed after adjustment continues deposit film.

Wherein, described technical recipe comprises the process time, and the process time of described control device to described technical recipe regulates, and the prolongation amount Δ T of process time is according to following formulae discovery:

$S=\frac{\mathrm{THK\; B}}{T1}$

$\mathrm{\ΔT}=\frac{\mathrm{THK\; A}-\mathrm{THK\; B}}{S}$

Wherein, THKB is the actual film thickness that substrate surface deposits; The overall process time that T1 carries out for deposition actual film thickness; THKA is target thickness.

Wherein, described checkout gear comprises ultrasonic probe or optic probe.

The present invention has following beneficial effect:

Reaction chamber provided by the invention, have between its process cavity with test chamber and make the two be connected, and for the biography sheet mouth that substrate passes through, and, process cavity is used for contraposition substrate in the inner and carries out thin film deposition processes, test chamber is for detecting the film thickness in deposition substrate, transmitting device is used for substrate transport between process cavity and test chamber, can be implemented in process cavity and complete technical recipe and come after substrate surface deposit film, the actual (real) thickness of deposit film will be detected in this substrate transfer to test chamber by transmitting device, and when actual (real) thickness miss the mark thickness, adjusting process formula also continues deposit film by substrate transfer to process cavity to perform the technical recipe after adjusting by transmitting device, this compared with prior art, in reaction chamber, the actual (real) thickness of substrate deposition film is detected after having can be implemented in technical recipe, and adjusting process formula realizes depositing target thickness, thus yields can be improved, and not need to adopt in prior art periodically based on the mode of test pieces adjusting process formula, thus not only can boost productivity, but also can not need to expend test pieces, thus can increase economic efficiency.

Accompanying drawing explanation

Fig. 1 is the structural representation of the reaction chamber of existing PVD equipment;

The structural representation of the reaction chamber that Fig. 2 provides for first embodiment of the invention;

Fig. 3 is the vertical view of support ring in the reaction chamber shown in Fig. 2;

Fig. 4 is the vertical view of lifting base in the reaction chamber shown in Fig. 2;

Fig. 5 is the view of the substrate transport between process cavity and test chamber of the transmitting device shown in Fig. 2;

The another kind of structural representation of the reaction chamber that Fig. 6 provides for first embodiment of the invention; And

The structural representation of the reaction chamber that Fig. 7 provides for second embodiment of the invention.

Embodiment

For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, the reaction chamber that the embodiment of the present invention provides is described in detail.

The structural representation of the reaction chamber that Fig. 2 provides for the embodiment of the present invention.Fig. 3 is the vertical view of support ring in the reaction chamber shown in Fig. 2.Fig. 4 is the vertical view of lifting base in the reaction chamber shown in Fig. 2.See also Fig. 2, Fig. 3 and Fig. 4, the reaction chamber that the present embodiment provides, comprise process cavity 20, test chamber 30 and transmitting device, wherein, process cavity 20 completes thin film deposition processes for contraposition substrate S in the inner; Test chamber 30 is for detecting the film thickness be deposited on substrate S, and, have between process cavity 20 with test chamber 30 and make the two be connected and the biography sheet mouth passed through for substrate, transmitting device is used for by passing sheet mouth substrate transport between process cavity 20 and test chamber 30.In the present embodiment, test chamber 30 is arranged on the sidewall of process cavity 20.

In the present embodiment, in process cavity 20, be provided with the lifting base 201 for carrying substrates S; Transmitting device comprises support ring 40 and the first driving mechanism 42, support ring 40 is provided with the supporter 401 for supporting substrate S, particularly, supporter 401 comprises along the spaced multiple thimble of support ring 40 circumference (such as, four), preferably, multiple thimble along support ring circumferential interval and evenly arrange, to realize stably supporting substrate S.First driving mechanism 42 for driving support ring 40 by passing sheet port transmission to the loading position in process cavity 20, or passes through to pass the detection position in sheet port transmission to 30 test chamber; So-called loading position refers to the position can carrying out loading and unloading to support ring 40 substrate S at place, the position of deposited film thickness on the detection substrate S that so-called detection position refers to place.In the present embodiment, the first driving mechanism 42 is rotating driver, and rotating driver drives support ring 40 to rotate to the loading position in process cavity 20 by passing sheet mouth, or rotates to the detection position in test chamber 30 by passing sheet mouth.

As shown in Figure 2, transmitting device also comprises rotating shaft 41, the two ends of rotating shaft 41 are fixed respectively at support ring 40 and the first driving mechanism 42, the diapire of reaction chamber is run through in one end of rotating shaft 41, and be connected with the first driving mechanism 42 be positioned at outside reaction chamber, first driving mechanism 42 rotates for drive shaft 41, rotates between process cavity 20 and test chamber 30 to drive support ring 40.Further, be ensure the vacuum environment of reaction chamber, the position contacted at the diapire of rotating shaft 41 and reaction chamber is provided with magnetic fluid.In the present embodiment, as shown in Figure 5, first driving mechanism 42 rotates clockwise the loading position B that predetermined angle O can realize the detection position A in substrate S Autonomous test chamber 30 to move to process cavity 20, and along being rotated counterclockwise the detection position A that predetermined angle O can realize substrate S to move to from the loading position B of process cavity 20 test chamber 30.

In addition, in the present embodiment, the internal diameter D1 of support ring 40 is greater than the outer diameter D 2 of lifting base 201, when support ring 40 is positioned at loading position B, lifting base 201 is positioned at the orthographic projection of support ring 40 annular distance, is risen in the annular distance of support ring 40 by lifting base 201, to realize the substrate S be positioned on supporter 40 to be passed on lifting base 201, now, deposit film technique can be carried out to substrate S; And, declined in the annular distance of support ring 40 by lifting base 201, to realize the substrate S be placed on lifting base 201 to be passed on strutting piece 401, and, when lifting base 201 drops to the below of support ring 40, drive support ring 40 by passing sheet port transmission to the detection position in test chamber 30 by the first driving mechanism 42.

In the present embodiment, the minimum diameter of supporter 401 place circumference is less than or equal to the external diameter of lifting base 201, and be provided with along it axially and run through the groove 2011 of lifting base 201 thickness on the lateral wall of lifting base 201, groove 2011 is corresponding with supporter 401 to be arranged, as shown in Figure 4, the quantity of groove 2011 and the quantity correspondence of supporter 401, be four, and the position of the supporter 401 of groove 2011 is corresponding, to realize being positioned at loading position B at support ring 40, and in the process of lifting base 201 descending motion in the annular distance of support ring 40, supporter 401 is elevated in the groove 2011 corresponded.So-called supporter 401 place circumference refers to the circumference with support ring 40 donut place each other.

Be appreciated that, in these cases, lifting base 201 can be made to complete supporting substrate S, namely the lower surface of substrate S is stacked on lifting base 201 completely, thus not only can realize stable support substrate S, but also lifting base 201 heated substrate S equably can be made, thus processing quality can be ensured.

As from the foregoing, the substrate S be positioned on the lifting base 201 of process cavity 20 can be realized directly to transfer on supporter 401 move to test chamber 20 again, and the substrate S Autonomous test chamber 30 on supporter 401 is directly transferred on the lifting base 201 of process cavity 20.

Test chamber 30 also comprises checkout gear 301 and control device 302.Wherein, checkout gear 301 for transmitting to substrate S upper surface, and is received from the signal of substrate S upper surface reflection, and the signal of this reflection is sent to control device 302.Particularly, checkout gear 301 comprises ultrasonic probe or optic probe, and ultrasonic probe or optic probe send ultrasonic signal or light signal to substrate S upper surface, and is received from ultrasonic signal or the light signal of the reflection of substrate S upper surface.Particularly, in the present embodiment, on the embedded roof being fixed on test chamber 30 of checkout gear 301, and one end of checkout gear 301 is positioned at test chamber 30.Wherein, the roof of test chamber 30 is metal cover board, and checkout gear 301 is fixed on this metal cover board by flange.Further, because the process environments of reaction chamber is generally vacuum environment, therefore, the position contacted with the roof of test chamber 30 at checkout gear 301 is provided with sealing ring.

The actual (real) thickness of signal acquisition substrate S deposited on silicon film of control device 302 for sending according to checkout gear 301.Particularly, the ultrasonic signal that control device 302 sends according to checkout gear 301 or light signal obtain the spacing between checkout gear 301 and substrate S upper surface, then obtain the actual (real) thickness of deposit film on substrate S according to normal pitch when this spacing and the non-deposit film of substrate S and between checkout gear 301.Control device 302 judges that whether this actual (real) thickness is equal with target thickness again, and if so, then substrate S Autonomous test chamber 30 is moved to process cavity 20 by controls transfer device, and process ends, be appreciated that and substrate S can be spread out of process cavity 20 after process ends, to carry out lower step process; If not, then the technological parameter in technical recipe is adjusted, and substrate S Autonomous test chamber 30 is moved to process cavity 20 by controls transfer device, and the technical recipe performed after adjustment continues deposit film.Particularly, control device 302 comprises computer.So-called technical recipe refers to the set of the technological parameter information comprised needed for technique.Wherein, technological parameter comprises top electrode output power of power supply, bottom electrode output power of power supply, the chamber pressure of process cavity, the throughput of process gas and process time etc.

Be appreciated that, in actual applications, the ultrasonic signal that control device 302 can send according to checkout gear 301 or light signal obtain the spacing between checkout gear 301 and substrate S upper surface, whether equal with the target distance between checkout gear 301 when directly judging this spacing again and substrate S deposits target thickness film, if not, namely actual (real) thickness and target thickness unequal; If so, namely actual (real) thickness is equal with target thickness.

The reaction chamber that being described below in detail application the present embodiment provides carries out the specific works process of technique.Particularly, pre-set the loading position B that support ring 40 is positioned at process cavity 20, and lifting base 201 is positioned at immediately below support ring 40, and supporter 401 and the position one_to_one corresponding of groove 2011, comprise the following steps:

Step S1, will need the substrate transfer of deposit film on the supporter 401 of support ring 40 by transmitting devices such as manipulators.

Step S2, lifting base 201 rises, until the substrate S be positioned on supporter 401 holds up by pedestal 201, namely realizes substrate S self-supporting ring 40 and is positioned on lifting base 201.

Step S3, performs technical recipe until complete technical recipe, to the substrate S deposit film be positioned on lifting base 201.

Step S4, lifting base 201 declines, until lifting base 201 is positioned at the below of support ring 40, now, supporter 401 will be positioned at the substrate S jack-up on lifting base 201 from groove 2011 corresponding with it, and namely substrate S is positioned on supporter 401 from lifting base 201.

Step S5, the first driving mechanism 42 (that is, rotating driver) drive shaft 41 rotates, and rotates detection position A to test chamber 30 to drive the support ring 40 carrying substrate S.

Step S6, checkout gear 301 sends signal to substrate S upper surface, and receives the signal of substrate S upper surface transmitting, and the signal of this reflection is sent to control device 302.

Step S7, the actual (real) thickness of the signal acquisition substrate S deposited on silicon film that control device 302 sends according to checkout gear 301, and judge that whether this actual (real) thickness is equal with target thickness, if so, then enter step S8; If not, then step S9 is entered.

Step S8, control device 302 controls the loading position B that the support ring 40 carrying substrate S is moved to process cavity 30 by rotating driver, now, is spread out of by substrate S by transmitting devices such as manipulators from process cavity 30, to carry out subsequent technique.

Step S9, technological parameter in control device 302 pairs of technical recipes adjusts, and control the handling position B that the support ring 40 carrying substrate S is moved to process cavity 30 by rotating driver, control lifting base 201 again to rise, until the substrate S be positioned on supporter 401 holds up by lifting base 201, enter step S3 again, now technical recipe is the technical recipe after adjustment.

Above-mentioned steps S1-S9 carries out a kind of course of work of technique for the reaction chamber that provides of application the present embodiment, but the present invention is not limited thereto.

Be appreciated that, before the above-mentioned work of execution, the technological parameter in technical recipe has been set in advance as the film thickness that this technical recipe deposits and has been not more than target thickness.Further, preferably, to realize the mode of the maximum deposition rate of same metal target to arrange the technological parameter in technical recipe, this can reduce the process time, thus can improve process efficiency.

In above-mentioned steps S9, the process time T of control device 302 pairs of technical recipes carries out prolongation and regulates, and the prolongation amount Δ T of process time T is according to following formulae discovery:

$S=\frac{\mathrm{THK\; B}}{T1}$

$\mathrm{\ΔT}=\frac{\mathrm{THK\; A}-\mathrm{THK\; B}}{S}$

Wherein, THKB is the actual film thickness that substrate surface deposits; The overall process time that T1 carries out for deposition actual film thickness; THKA is target thickness.Be appreciated that and can draw according to above-mentioned formula, S is the actual average speed of deposit film in overall process time.

Illustrate below and how to realize adjusting the process time.If perform above-mentioned steps S1-S9 first, the process time T of technical recipe is t1 in step s3, the film thickness that checkout gear detects in step s 6 is h1, judge in the step s 7 the film thickness that checkout gear sends and target thickness unequal, then in step s 9, THKB=h1, T1=t1, can calculate Δ T=t2 according to above-mentioned formula; Then above-mentioned steps S3-S9 is performed, now, step S3 performs the technical recipe after adjustment, the process time T of technical recipe is t2, if in step s 6 checkout gear detect film thickness be h2, judge in the step s 7 the film thickness that checkout gear sends and target thickness unequal, then in step s 9, THKB=h2, T1=t1+t2, can calculate Δ T=t3 according to above-mentioned formula; By that analogy, until judge that the film thickness that checkout gear sends is equal with target thickness in the step s 7.

In the present embodiment, the top of process cavity 20 is provided with target 202, it is connected with the top electrode power supply (not shown) being arranged on process cavity 20 outside, plasma is formed in order to the process gas in provocative reaction chamber, and provide back bias voltage to target 202, to attract plasma bombardment target 202, make the metallic atom on target 202 surface overflow and be deposited on the surface of substrate S, thus form film on the surface of substrate S.Rotary magnet 203 is set above target 202, in order to plasma to be gathered in the below of target 202, thus improves the plasma quantity of bombardment target 202.Lifting base 201 is electrically connected with bottom electrode power supply 204, for providing back bias voltage to lifting base 201, moves towards substrate S to attract plasma.That is, in the present embodiment, process cavity 20 adopts physical vapour deposition (PVD) mode deposit film.In actual applications, process cavity 20 also can adopt chemical meteorology deposition mode deposit film.

It should be noted that, in the present embodiment, because the thickness of deposit film and process time are directly proportional, therefore, can compensate according to the process time of above-mentioned formula adjusting process formula, to realize the film depositing target thickness.But, the present invention is not limited thereto, in actual applications, not only can compensate according to other formula adjusting process times, other technological parameters relevant to deposited film thickness also can be regulated to compensate, such as, deposition rate is directly proportional to the power output of top electrode power supply, and under process time certain condition, deposited film thickness is directly proportional to deposition rate, therefore, can compensate by regulating the power output of top electrode power supply.Certainly, also the power output of top electrode power supply and process time can be regulated to compensate simultaneously.

Also it should be noted that, in actual applications, as shown in Figure 6, the pedestal without elevating function can be used, namely, lifting base 201 corresponds to pedestal 201 as described below, and use the transmitting device with elevating function, namely transmitting device also comprises the second driving mechanism 43 for driving support ring 40 to be elevated, in this case, be with the difference of above-described embodiment: the second driving mechanism 43 rises outside pedestal 201 by driving support ring 40 to be nested with, to realize the substrate S be placed on pedestal 201 to be passed on supporter 401, and, support ring 40 be positioned at pedestal 201 rise time, be driven through by the first driving mechanism 42 and pass sheet port transmission to the detection position A in test chamber 30, and the second driving mechanism 43 declining by driving support ring 40 to be nested with outside pedestal 201, to realize pedestal 201, the substrate be positioned on supporter 401 being held up, now, thin film deposition processes can be carried out to substrate.As from the foregoing, this is compared with above-mentioned first embodiment, the substrate S be positioned on the pedestal 201 of process cavity 20 can be realized equally to transfer on supporter 401 move to test chamber 20 again, and the substrate S Autonomous test chamber 30 on supporter 401 is transferred on the lifting base 201 of process cavity 20.

In these cases, the specific works process of reaction chamber and the above-mentioned course of work of the present embodiment similar.The difference of the two is only: being risen by the lifting base 201 in step S1-S9 replaces with the second elevating mechanism 43 drive shaft 41 and decline, and is declined by lifting base 201 and replace with the second elevating mechanism 43 drive shaft 41 and rise.

In addition, also it should be noted that, in actual applications, the minimum diameter of supporter 401 place circumference can be greater than the external diameter of lifting base 201 and be less than the external diameter of substrate S, in this case, the annular rim region of substrate S is not stacked on lifting base 201, and lifting base 201 is elevated in support ring 40 annular distance, can realize supporter 401 by the substrate S jack-up be positioned on lifting base 201 and be passed on lifting base 201 by the substrate be positioned on supporter 401.In this case, supporter 401 can be not only thimble, also can other structures, and such as, annular support, as long as can realize this substrate of stable support S.

In addition, also it should be noted that, in the present embodiment, rotate by rotating driving device 42 drive shaft 41, move between process cavity 20 and test chamber 30 to drive support ring 40.But, the present invention is not limited thereto, in actual applications, other modes also can be adopted to realize support ring 40 and move between process cavity 20 and test chamber 30, such as, adopt linear drive apparatus that support ring 40 is moved linearly between process cavity 20 and test chamber 30.

In sum, the reaction chamber that the embodiment of the present invention provides, have between its process cavity 20 with test chamber 30 and make the two be connected, and for the biography sheet mouth that substrate passes through, that is, process cavity 20 and test chamber 30 are vacuum environment, and, process cavity 20 carries out thin film deposition processes for contraposition substrate S in the inner, test chamber 30 is for detecting the film thickness of deposition on the substrate S in it, transmitting device is used for substrate transport between process cavity 20 and test chamber 30, can be implemented in process cavity 20 after completing technical recipe deposit film, by transmitting device, substrate S is transferred to the actual film thickness detecting deposition in test chamber 30, and when actual film thickness miss the mark thickness, substrate S is also transferred in process cavity 20 the technical recipe continuation deposit film performed after adjustment by adjusting process formula by transmitting device, this compared with prior art, in reaction chamber, the actual film thickness of substrate deposition is detected after having can be implemented in technical recipe, and adjusting process formula realizes depositing target thickness, thus yields can be improved, and not need to adopt in prior art periodically based on the mode of test pieces adjusting process formula, thus not only can boost productivity, but also can not need to expend test pieces, thus can increase economic efficiency.

The structural representation of the reaction chamber that Fig. 7 provides for second embodiment of the invention.Refer to Fig. 7, the reaction chamber that the present embodiment provides and the reaction chamber that above-mentioned first embodiment provides similar, comprise process cavity 20, test chamber 30 and transmitting device equally, because the 26S Proteasome Structure and Function of process cavity 20, test chamber 30 and transmitting device there has been detailed description in the above-described first embodiment, do not repeat them here.

The difference of the reaction chamber that the reaction chamber only provided the present embodiment below and above-mentioned first embodiment provide is described in detail.Particularly, in the present embodiment, transmitting device comprises strutting piece 50 and the first driving mechanism 42, and wherein, strutting piece 50 for carrying substrates S, and is platy structure, and the first driving mechanism 42 is similar with above-described embodiment, does not repeat them here.

And, pedestal 201 does not have elevating function, pedestal 201 is provided with the through hole running through its upper and lower surface, and, thimble lowering or hoisting gear is also provided with in process cavity 20, thimble lowering or hoisting gear comprises multiple thimble 210 and elevating mechanism 211, the quantity of the quantity of thimble 210 and position and through hole and position one_to_one corresponding; Elevating mechanism 211 is elevated in through hole corresponding with it for driving multiple thimble 210.

In the present embodiment, transfer in test chamber 30 for realizing substrate S from pedestal 201, elevating mechanism 211 drives multiple thimble 210 to rise, substrate S jack-up on pedestal 201 will be positioned at, strutting piece 50 rotates between pedestal 201 upper surface and the substrate S on thimble 210 via the gap between adjacent two supporters 410 (i.e. thimble), thimble 210 is driven to decline by elevating mechanism 211 again, until thimble 210 is positioned at the below of support ring 40, now, substrate S is positioned on strutting piece 50, strutting piece 50 is rotated in test chamber 30 by the first driving mechanism 42 (i.e. rotating driver) again, to detect the actual (real) thickness of produce thin films on substrates.

For realizing on lifting base 201 that substrate S Autonomous test chamber 30 transfers in process cavity 20, by the first driving mechanism 42, strutting piece 50 is rotated in process cavity 20, thimble 210 is driven to rise the substrate S jack-up on strutting piece 50 by elevating mechanism 211 again, now by the first driving mechanism 42, the gap of strutting piece 50 between adjacent two thimbles 210 is rotated in test chamber 20, thimble 210 is driven to decline by elevating mechanism 211 again, until thimble 210 is positioned at the below of pedestal 201 upper surface, be positioned on pedestal 201 to realize substrate S, deposit film technique is carried out to substrate.

Be appreciated that in the present embodiment, the structure of strutting piece 50 should be set to: both can move via the gap between adjacent two thimbles 210, and can not have an impact again to the elevating movement of thimble 210.In this case, strutting piece 50 not only can adopt platy structure, also the thimble structure shown in first and second embodiment above-mentioned can be adopted, as long as support ring 40 both can move via the gap between adjacent two thimbles 210, can not have an impact to the elevating movement of thimble 210 again.

The course of work of the reaction chamber that the course of work of the reaction chamber that the present embodiment provides and above-mentioned first embodiment provide is similar, do not repeat them here, the two difference is only: on bearing part 50, the process of loading and unloading substrate is different, because the substrate loading and unloading process of the present embodiment is in above-detailed, do not repeat them here.

It should be noted that, in the present embodiment, process cavity 20 adopts existing lifting base 201 and thimble lowering or hoisting gear, and this can be avoided the waste of existing equipment.And thimble lowering or hoisting gear is not set in the above-described first embodiment, only be provided with transmitting device, it can realize substrate S and directly transmit between strutting piece 50 and lifting base 201, this and the transmitting procedure of substrate S between strutting piece 50 and lifting base 201 in the present embodiment need compared with thimble lowering or hoisting gear coordinates to realize, this not only can simplify the structure of reaction chamber, but also can the efficiency of transmission of substrate, thus can increase economic efficiency.

Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.

Claims (11)

1. a reaction chamber, is characterized in that, comprises process cavity, test chamber and transmitting device, wherein,

Described process cavity is used for carrying out thin film deposition processes to substrate;

Described test chamber is used for detection and is deposited on on-chip film thickness;

Make the two be connected and the biography sheet mouth passed through for substrate in described process cavity with having between test chamber, described transmitting device is used for by described biography sheet mouth substrate transport between described process cavity and described test chamber.

2. reaction chamber according to claim 1, is characterized in that, is provided with the lifting base for carrying substrates in described process cavity; Described transmitting device comprises support ring and the first driving mechanism, described support ring is provided with the supporter for supporting described substrate, described first driving mechanism for driving described support ring by described biography sheet port transmission to the loading position in described process cavity, or by the detection position in described biography sheet port transmission extremely described test chamber;

The internal diameter of described support ring is greater than the external diameter of described lifting base, when described support ring is positioned at described loading position, described lifting base is positioned at the orthographic projection of described support ring annular distance, risen in the annular distance of described support ring by described lifting base, to realize the described substrate be positioned on supporter to be passed on described lifting base; And, declined in the annular distance of support ring by described lifting base, to realize the substrate be placed on described lifting base to be passed on described strutting piece, and, when described lifting base drops to the below of described support ring, drive described support ring by the detection position in described biography sheet port transmission to described test chamber by described first driving mechanism.

3. reaction chamber according to claim 2, it is characterized in that, the minimum diameter of described supporter place circumference is less than or equal to the external diameter of described lifting base, and be provided with on the lateral wall of described lifting base along it axially and run through the groove of described lifting base thickness, described groove is corresponding with described supporter to be arranged;

Be positioned at described loading position at described support ring, and described lifting base is done in the process of elevating movement, described supporter is elevated in the described groove corresponded.

4. reaction chamber according to claim 1, is characterized in that, is provided with the pedestal for carrying substrates in described process cavity;

Described transmitting device comprises support ring, the first driving mechanism and the second driving mechanism, described support ring is provided with the supporter for supporting described substrate, described first driving mechanism for driving described support ring by described biography sheet port transmission to the loading position in described process cavity, or by the detection position in described biography sheet port transmission extremely described test chamber; Described second driving mechanism is elevated for driving described support ring;

The internal diameter of described support ring is greater than the external diameter of described pedestal, and when described support ring is positioned at described loading position, described pedestal is positioned at the orthographic projection of described support ring annular distance, described second driving mechanism rises outside described pedestal by driving described support ring to be nested with, to realize the substrate be placed on described pedestal to be passed on described supporter, and, when described support ring is positioned at the rising of described pedestal, be driven through the detection position in described biography sheet port transmission to described test chamber by described first driving mechanism; And described second driving mechanism declines outside described pedestal by driving described support ring to be nested with, to realize described pedestal, the described substrate be positioned on supporter is held up.

5. reaction chamber according to claim 4, it is characterized in that, the minimum diameter of described supporter place circumference is less than or equal to the external diameter of described pedestal, and be provided with on the lateral wall of described pedestal along it axially and run through the groove of described base thickness, described groove is corresponding with described supporter to be arranged;

Be positioned at described loading position at described supporter at described support ring, and described second driving mechanism is done in the process of elevating movement by driving described support ring to be nested with outside described pedestal, described supporter is elevated in the described groove corresponded.

6. the reaction chamber according to claim 3 or 5, is characterized in that, described supporter comprises along the spaced multiple thimble of described support ring circumference.

7. the reaction chamber according to claim 2 or 4, is characterized in that, the minimum diameter of described supporter place circumference is greater than the external diameter of described pedestal and is less than the external diameter of described substrate.

8. reaction chamber according to claim 1, is characterized in that, described test chamber is arranged on the sidewall of described process cavity.

9. reaction chamber according to claim 1, it is characterized in that, described test chamber comprises checkout gear and control device, described checkout gear is arranged on the roof of described process cavity, for transmitting to described substrate upper surface, and be received from the signal of described substrate upper surface reflection and send it to control device;

Described control device is used for the actual (real) thickness of substrate surface deposit film according to the signal acquisition from described checkout gear, and judge that whether described actual (real) thickness is equal with target thickness, if, then control described transmitting device and described substrate is moved to described process cavity from described test chamber, and process ends; If not, then the technological parameter in technical recipe is adjusted, and control described transmitting device described substrate is moved to described process cavity from described test chamber, and the technical recipe performed after adjustment continues deposit film.

10. reaction chamber according to claim 8, is characterized in that, described technical recipe comprises the process time, and the process time of described control device to described technical recipe regulates, and the prolongation amount Δ T of process time is according to following formulae discovery:

$S=\frac{\mathrm{THK\; B}}{T1}$

$\mathrm{\ΔT}=\frac{\mathrm{THK\; A}-\mathrm{THK\; B}}{S}$

Wherein, THKB is the actual film thickness that substrate surface deposits; The overall process time that T1 carries out for deposition actual film thickness; THKA is target thickness.

11. reaction chambers according to claim 9, is characterized in that, described checkout gear comprises ultrasonic probe or optic probe.