CN105565258B - A kind of preparation method of semiconductor devices - Google Patents
A kind of preparation method of semiconductor devices Download PDFInfo
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- CN105565258B CN105565258B CN201410554811.6A CN201410554811A CN105565258B CN 105565258 B CN105565258 B CN 105565258B CN 201410554811 A CN201410554811 A CN 201410554811A CN 105565258 B CN105565258 B CN 105565258B
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- photoresistance
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- gettering layer
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Abstract
The present invention provides a kind of preparation method of semiconductor devices, including：Substrate is provided, gettering layer is formed on the substrate；Photoresistance is formed on the gettering layer, wherein, the part photoresistance enters in the air-breathing layer surface；The photoresistance is exposed and developed, to form the photoresistance of patterning；Photoresistance in the air-breathing layer surface of the photoresistance exposed at both sides of the patterning is removed using the first cineration technics；Using the photoresistance of the patterning as mask, the gettering layer is performed etching；Remove the photoresistance of the patterning.According to the preparation method of the present invention, by increasing the step of photoresistance in the air-breathing layer surface to the photoresistance exposed at both sides of patterning carries out cineration technics, avoid inhibition of the photoresistance in gettering layer to etching, the etching to gettering layer is realized well, ensure being smoothed out for technique, and then improve the yield and performance of device.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to more particularly to a kind of making side of semiconductor devices
Method.
Background technology
In technical field of semiconductors, some devices need could normal work, example in a preferable vacuum environment
Such as MEMS (Micro-Electro-Mechanical Systems, MEMS).
Vacuum Package is a kind of to use seal cavity to provide the encapsulation technology of vacuum environment for MEMS element.It can be
The MEMS product chip circumferences such as radio frequency, inertia, microelectronic vacuum class one vacuum environment of formation, can make MEMS in Gao Zhen
Worked under Altitude, and ensure to there is micro-structural therein excellent vibration performance that (such as various mechanical resonators there are high product
Quality factor), can normal work, and improve its reliability.Vacuum Package based on wafer bonding technique is by with microcomputer
The substrate wafer of electric structure and cover plate wafer direct bonding, form the environment of a vacuum.But it is due to the making in device
Cheng Zhonghui constantly releases outgassing (outgasing) from device, is formed to reduce the vacuum of vacuum chamber, influences the product of device
Quality factor (Q-factor), or even cause device cisco unity malfunction.
It is that metal cladding is as gettering layer on cover plate wafer currently for the most frequently used solution of above mentioned problem, for example
Metal Ti, activates Ti to absorb outgassing (outgasing) when bonding.The formation process of current gettering layer includes following step
Suddenly：First, as shown in Figure 1A, form one layer of Ti metal on the substrate 100 by electron beam evaporation, be used as gettering layer 101；
Then, as shown in Figure 1B, photoresistance 102 is coated on gettering layer 101；Then, as shown in Figure 1 C, photoresistance 102 is exposed and
Development, to form the photoresistance 102a of patterning；It is mask to gettering layer 101 using the photoresistance 102a of patterning as shown in Fig. 1 D-1E
Wet etching is carried out, then removes the photoresistance 102a of patterning.But find to use electron beam during the step wet etching
The Ti metallic getter layers of evaporation process formation are excessively loose, cause photoresistance to enter Ti top layers, and wet etching is to photoresistance etching rate
Zero, so Ti can not be etched, and the patterning to gettering layer can not be realized if being etched again after removal photoresistance.
Therefore, it is necessary to a kind of preparation method of new semiconductor devices be proposed, to solve the above problems.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will enter in embodiment part
One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical scheme claimed
Key feature and essential features, the protection domain for attempting to determine technical scheme claimed is not meant that more.
In order to overcome the problem of presently, there are, the present invention provides a kind of preparation method of semiconductor devices, including：
Substrate is provided, gettering layer is formed on the substrate；
Photoresistance is formed on the gettering layer, wherein, the part photoresistance enters in the air-breathing layer surface；
The photoresistance is exposed and developed, to form the photoresistance of patterning；
Removed using the first cineration technics in the air-breathing layer surface of the photoresistance exposed at both sides of the patterning
Photoresistance；
Using the photoresistance of the patterning as mask, the gettering layer is performed etching；
Remove the photoresistance of the patterning.
Further, the reacting gas of first cineration technics includes oxygen.
Further, the reacting gas is selected from O2、O3、CO、CO2In one or more.
Further, the range of flow of the reacting gas of first cineration technics is 50~5000sccm, and power is 1000
~8000W.
Further, the ashing time of first cineration technics is 5~20s.
Further, the material of the gettering layer includes metal Ti.
Further, the gettering layer is formed using electron beam evaporation methods.
Further, after the photoresistance of the patterning is removed, in addition to the step of the second cineration technics of execution.
Further, the preparation method is applied to MEMS.
In summary, according to the preparation method of the present invention, by increasing the gettering layer to the photoresistance exposed at both sides of patterning
The step of photoresistance in surface carries out cineration technics, it is to avoid photoresistance in gettering layer is real well to the inhibition of etching
Now to the etching of gettering layer, it is ensured that technique is smoothed out, and then improves the yield and performance of device.
Brief description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, for explaining the principle of the present invention.
In accompanying drawing：
Figure 1A -1E show that the manufacture craft of existing gettering layer implements the diagrammatic cross-section of obtained device successively；
Fig. 2A -2H show that implementation steps obtain the diagrammatic cross-section of device to the embodiment of the invention successively；
Fig. 3 shows the process chart of embodiment of the invention implementation steps successively.
Embodiment
In the following description, a large amount of concrete details are given to provide more thorough understanding of the invention.So
And, it is obvious to the skilled person that the present invention can be able to without one or more of these details
Implement.In other examples, in order to avoid obscuring with the present invention, do not enter for some technical characteristics well known in the art
Row description.
It should be appreciated that the present invention can be implemented in different forms, and it should not be construed as being limited to what is proposed here
Embodiment.On the contrary, providing these embodiments disclosure will be made thoroughly and complete, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in Ceng He areas may be exaggerated.From beginning to end
Same reference numerals represent identical element.
It should be understood that be referred to as when element or layer " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " other members
When part or layer, its can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be element or layer between two parties.On the contrary, when element be referred to as " on directly existing ... ", " with ... direct neighbor ", " be directly connected to
To " or when " being directly coupled to " other elements or layer, then in the absence of element or layer between two parties.Although it should be understood that art can be used
Language first, second, third, etc. describe various elements, part, area, floor and/or part, these elements, part, area, floor and/or portion
Dividing to be limited by these terms.These terms are used merely to distinguish an element, part, area, floor or part and another
Element, part, area, floor or part.Therefore, do not depart from present invention teach that under, the first element discussed below, part, area,
Floor or part are represented by the second element, part, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... on ",
" above " etc., can describe for convenience herein and by using so as to the element or feature shown in description figure with it is other
The relation of element or feature.It should be understood that in addition to the orientation shown in figure, spatial relationship term be intended to also including the use of with
The different orientation of device in operation.If for example, the device upset in accompanying drawing, then, is described as " below other elements "
Or " under it " or " under it " element or feature will be oriented to other elements or feature " on ".Therefore, exemplary term
" ... below " and " ... under " it may include upper and lower two orientations.Device, which can be additionally orientated, (to be rotated by 90 ° or other takes
To) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, " one " and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when in this specification in use, determine the feature, it is whole
Number, step, operation, the presence of element and/or part, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of element, part and/or group.Herein in use, term "and/or" includes any and institute of related Listed Items
There is combination.
In order to thoroughly understand the present invention, detailed step will be proposed in following description, to explain proposition of the present invention
Technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, but in addition to these detailed descriptions, the present invention can be with
With other embodiment.
[exemplary embodiment]
The preparation method of the gettering layer of the present invention is described in detail below with reference to Fig. 2A -2H and Fig. 3.
First, as shown in Figure 2 A there is provided substrate 200, gettering layer 201 is formed in the substrate 200.
Specifically, the substrate 200 can be to include the Semiconductor substrate of silicon materials or other glass or ceramics
Material.Exemplarily, it may also be formed with silicon hole (not shown) etc. in the substrate 200.When substrate 200 is used as MEMS
During cover plate, groove can also be formed in substrate, gettering layer, which is deposited on substrate, to be had on reeded side, and the groove is used for
MEMS provides closed cavity.Herein for simplicity, only shown with a blank.
One or more of the material of the gettering layer 201 in zirconium base or titanium-base alloy, alternatively, the gettering layer
Material can be metal Ti, but be not limited to this, there is the material of air suction function to be applied to the present invention for other.Gettering layer may be used also
To be deposited by methods such as electron beam evaporation plating, chemical vapor deposition, magnetron sputtering or silk-screen printings.In one example, lead to
Cross electron beam evaporation methods and metal Ti is formed on substrate as gettering layer, thickness is 20~500 angstroms.The gettering layer is can absorb
The outgassing (outgasing) released from device.
Then, as shown in Figure 2 B, photoresistance 202 is formed on the gettering layer 201, wherein, the part photoresistance 202 enters
In the surface of gettering layer 201.
Can be using any method formation photoresistance 202 well known to those skilled in the art, such as spin coating or curtain coating.It is described
Photoresistance 202 can be positivity photoresistance or negativity photoresistance.Alternatively, the thickness range of the photoresistance is from about 30000 angstroms to about
60000 angstroms.
The step of soft baking (Soft Baking) can also be further comprised afterwards, to remove solvent, strengthen the glutinous of photoresistance 202
Stress in attached property, release photoresistance, prevents photoresistance contaminated equipment.
Because the Ti metallic getter layers using electron beam evaporation formation are excessively loose, photoresistance 202 is caused to enter air-breathing
In 201 surface of layer.
Then, as shown in Figure 2 C, the photoresistance 202 is exposed and developed, form the photoresistance 202a of patterning.
Specifically, segment beam is passed through using reticle, be irradiated on photoresistance 202, reacted with photoresistance 202, from
And photoresistance 202 is exposed.Developer solution is sprayed onto to the surface of photoresistance again, the photoresistance 202a of final patterning is formed.
After photoresistance is exposed and developed, the work after (Queue time) could enter for a period of time is also needed to wait for
Skill flow, such as stand-by period (Queue time) are 48h, 72h.The above-mentioned time is only exemplarily, with specific reference to actual work
Skill needs to be adjusted.And in waiting time, the photoresistance 202 of patterning can also further diffuse into gettering layer below
In 201, as shown in Figure 2 D.
Then, as shown in Figure 2 E, the suction of the photoresistance 202a exposed at both sides positioned at patterning is removed using the first cineration technics
Photoresistance in the surface of gas-bearing formation 201.
Specifically, the reacting gas of first cineration technics includes oxygen, such as O2、O3、CO、CO2Deng one in gas
Kind, or its composition.Exemplarily, using oxygen as reacting gas, the range of flow of oxygen is 50~5000sccm, and power is
1000~8000W.
Because the thickness and quality of the photoresistance in air-breathing layer surface are significantly less than the photoresistance 202a of patterning thickness and matter
Amount, therefore in this step, the parameter such as control ashing time, power, flow, for example, carrying out the cineration technics or drop of short time
Power of low cineration technics etc..Exemplarily, the ashing time for carrying out the first cineration technics of short time is 5~20s.As long as protecting
Card removes the photoresistance in the surface of gettering layer 201 of the photoresistance 202a exposed at both sides of patterning, can't be to patterning
Photoresistance 202a have a negative impact.
Then, as shown in Figure 2 F, the photoresistance 202a using patterning is performed etching as mask to the gettering layer 201.
Specifically, the etching both can also use wet etching from dry etching.Dry etching can be used
Anisotropic etching method based on carbon fluoride gas.Wet etching can use hydrofluoric acid solution, such as hydrofluoric acid cushioning liquid
(buffer solution of hydrofluoric acid (BHF)) or buffered oxide etch agent (buffer oxide
etchant(BOE)).In this implementation, preferably the gettering layer 201 is performed etching using wet method lithography.
Due in previous process steps, the photoresistance in exposed air-breathing layer surface being ashed and is removed, therefore can be very in this step
Etching of the good realization to gettering layer.
Then, as shown in Figure 2 G, the photoresistance 202a of patterning is removed.Can be using well known to those skilled in the art any suitable
Method removes the photoresistance 202a of patterning, such as cineration technics.
It is single possibly can not to be inhaled completely using step removal technique because part photoresistance is diffused into gettering layer 201
Photoresistance in the surface of gas-bearing formation 201 is removed.
Then, as illustrated in figure 2h, the second cineration technics is carried out, to remove remaining photoresistance in the surface of gettering layer 201 completely.
Specifically can be according to the thickness and quality of remaining photoresistance, reaction gas flow, ashing to the second cineration technics
The parameter such as time or power is adjusted.The process conditions same or like with the first cineration technics can also be used, herein not
Make concrete restriction.
So far complete the manufacture craft to gettering layer, the above method be applied to MEMS making or other need to be formed
The making of the device of gettering layer.Afterwards, air suction function that may also include wafer bonding for MEMS to activate gettering layer etc.
Step, therefore not to repeat here.
In summary, according to the preparation method of the present invention, by increasing the gettering layer to the photoresistance exposed at both sides of patterning
The step of photoresistance in surface carries out cineration technics, it is to avoid photoresistance in gettering layer is real well to the inhibition of etching
Now to the etching of gettering layer, it is ensured that technique is smoothed out, and then improves the yield and performance of device.
Reference picture 3, illustrated therein is the flow chart for the step of method according to embodiments of the present invention is implemented successively, for letter
The flow of whole manufacturing process is shown.
In step 301 there is provided substrate, gettering layer is formed on the substrate；
In step 302, photoresistance is formed on the gettering layer, wherein, the part photoresistance enters the gettering layer table
In face；
In step 303, the photoresistance is exposed and developed, to form the photoresistance of patterning；
In step 304, the suction of the photoresistance exposed at both sides positioned at the patterning is removed using the first cineration technics
Photoresistance in gas-bearing formation surface；
In step 305, using the photoresistance of the patterning as mask, the gettering layer is performed etching；
Within step 306, the photoresistance of the patterning is removed.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and the purpose of explanation, and be not intended to limit the invention in described scope of embodiments.In addition people in the art
Member according to the teachings of the present invention it is understood that the invention is not limited in above-described embodiment, can also make more kinds of
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (9)
1. a kind of preparation method of semiconductor devices, including：
Substrate is provided, gettering layer is formed on the substrate；
Photoresistance is formed on the gettering layer, wherein, the part photoresistance enters in the air-breathing layer surface；
The photoresistance is exposed and developed, to form the photoresistance of patterning；
Photoresistance in the air-breathing layer surface of the photoresistance exposed at both sides of the patterning is removed using the first cineration technics,
To avoid the photoresistance in the gettering layer to the inhibition of etching；
Using the photoresistance of the patterning as mask, the gettering layer is performed etching；
Remove the photoresistance of the patterning.
2. preparation method according to claim 1, it is characterised in that the reacting gas of first cineration technics includes
Oxygen.
3. preparation method according to claim 2, it is characterised in that the reacting gas is selected from O2、O3、CO、CO2In
It is one or more.
4. preparation method according to claim 1, it is characterised in that the flow of the reacting gas of first cineration technics
Scope is 50~5000sccm, and power is 1000~8000W.
5. preparation method according to claim 1, it is characterised in that the ashing time of first cineration technics is 5~
20s。
6. preparation method according to claim 1, it is characterised in that the material of the gettering layer includes metal Ti.
7. preparation method according to claim 1, it is characterised in that form the air-breathing using electron beam evaporation methods
Layer.
8. preparation method according to claim 1, it is characterised in that after the photoresistance of the patterning is removed, in addition to
The step of performing the second cineration technics.
9. preparation method according to claim 1, it is characterised in that the preparation method is applied to MEMS.
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| JP2720779B2 (en) * | 1993-12-28 | 1998-03-04 | 日本電気株式会社 | Thin film transistor and method of manufacturing the same |
| KR101776923B1 (en) * | 2011-08-05 | 2017-09-11 | 삼성디스플레이 주식회사 | Etchant composition, method of forming a metal pattern using the etchant and method of manufacturing a display substrate |
| KR101832184B1 (en) * | 2011-11-08 | 2018-02-28 | 삼성디스플레이 주식회사 | Etchant composition and method of manufacturing a display substrate using the same |
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| US6426012B1 (en) * | 2000-08-24 | 2002-07-30 | International Business Machines Corporation | Wet chemical etch process for patterning MRAM magnetic layers |
| CN1417859A (en) * | 2001-10-30 | 2003-05-14 | 株式会社半导体能源研究所 | Semiconductor device |
| CN101768743A (en) * | 2008-12-30 | 2010-07-07 | 中芯国际集成电路制造(上海)有限公司 | Method for etching germanium antimony tellurium alloy materials |
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