CN105576117A - Texture piezoelectric polymer film of high transverse effect and preparation method of film - Google Patents
Texture piezoelectric polymer film of high transverse effect and preparation method of film Download PDFInfo
- Publication number
- CN105576117A CN105576117A CN201410553618.0A CN201410553618A CN105576117A CN 105576117 A CN105576117 A CN 105576117A CN 201410553618 A CN201410553618 A CN 201410553618A CN 105576117 A CN105576117 A CN 105576117A
- Authority
- CN
- China
- Prior art keywords
- film
- preparation
- piezoelectric polymer
- texturing
- trifluoro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses a texture piezoelectric polymer film of high transverse effect and a preparation method of the film. The nonisothermal crystallisation process of the film prepared by the solution method is controlled to realize preferable orientation of molecular dipole moment of the film is realized, and the piezoelectric polymer film of the texture structure in which the molecular dipoles are arranged preferably along the plane of the film is prepared. The piezoelectric polymer film is characterized in that the horizontal piezoelectric effect of the film is higher than that of a film of the same components but without texturizing, can be applied to preparation of a sensor of high transverse piezoelectric effect, and has good application prospects in the fields of a flexible nano generation system and a novel energy collection system.
Description
Technical field
The present invention relates to piezopolymer and piezoelectric device field, be specifically related to a kind of high transversal effect texturing piezoelectric polymer thin-film and preparation method thereof.
Background technology
Flexible piezoelectric material category is less, mainly has ferroelectric beta phase structure fluoropolymer polyvinylidene fluoride (PVDF) and polyvinylidene fluoride-trifluoro-ethylene copolymer (P (VDF-TrFE)).Such material because of have lightweight, pliability good, can the incomparable plurality of advantages of the inorganic piezoelectric material such as large area film forming and low-temperature growth, in extraordinary acoustic transducer, transducer, Nanoelectromechanical and energy-storage system etc., there is wide application.Polymer has the labyrinth characteristics such as multi-configuration, many conformations and partially crystalline.Texture refers to the Structure Phenomenon of the lattice of crystalline material along specific direction preferential arrangement, and for crystalline polymer, texture refers to that molecule has the structure of preferred orientation.Macroscopical piezoelectricity of piezopolymer comes from aligning of molecular dipole, and therefore the piezoelectricity of orientation on polymer of molecular dipole has vital impact.Textured polymer has a lot of physical characteristic, as anisotropy.Textured piezopolymer can obviously strengthen in the piezoelectricity ferro effect of specific direction, and this characteristic can be used for the optimization of related device performance and the design preparation of new unit.The method preparing texturing or molecule preferred orientation polymer can be divided three classes roughly: Mechanical Method (as stress and friction conversion etc.), Physical (as electrospinning etc.) and physical-chemical process (as interface interaction and crystallization control etc.).Such as, the dipole moment prepared by the physical method of the electrospinning vertically PVDF fiber of preferred orientation can be used for preparing flexible nano motor (NanoEnergy, Vol.1, pp.356 ~ 371).But piezopolymer needs to make film more and uses in various transducer and transducer, and these mechanical means and physical method are not suitable for the preparation of a lot of piezoelectric thin film device as accelerometer etc.3rd class physico-chemical process have equipment simple, be easy to operation, be easy to the plurality of advantages such as integrated with element manufacturing, but these class methods have no report for the preparation of the research of texturing piezoelectric polymer thin-film.
Therefore, controlling the texturing piezoelectric polymer thin-film of molecule along required direction preferred orientation according to performance need, being designed with significance to improving specific direction piezoelectricity, raising material property and optimised devices.And prepare textured piezoelectric polymer thin-film by physico-chemical process, then have equipment simple, easy and simple to handle, be easy to the advantages such as industrialization.
Summary of the invention
The invention provides a kind of texturing piezoelectric polymer thin-film with high transversal effect, can be used for the particular characteristic and the new unit design preparation that improve existing piezoelectric thin film device.Present invention also offers a kind of simple preparation method of the high transversal effect texturing piezoelectric polymer thin-film controlled by liquid deposition and non-isothermal crystallizing process.
The high transversal effect texturing piezoelectric polymer thin-film that the present invention proposes, the thickness of described piezoelectric polymer thin-film is 50nm ~ 2 μm, this film is made up of polyvinylidene fluoride-trifluoro-ethylene copolymer, in wherein said polyvinylidene fluoride-trifluoro-ethylene copolymer, the molar content of vinylidene fluoride is 50% ~ 82%, is preferably 65% ~ 80%.
The preparation method of described texturing piezoelectric polymer thin-film, comprises the following steps:
(1) polyvinylidene fluoride-trifluoro-ethylene copolymer P (VDF-TrFE) is dissolved in organic solvent, obtain the solution that concentration is 1.0wt% ~ 10.0wt%, be preferably 2.0wt% ~ 6.0wt%, in wherein said polyvinylidene fluoride-trifluoro-ethylene copolymer, the molar content of vinylidene fluoride is 50% ~ 82%, be preferably 65% ~ 80%, and described organic solvent is the good solvent of polyvinylidene fluoride-trifluoro-ethylene copolymer;
(2) will treat inorganic substrate or the organic substrate ultrasonic cleaning in one of both isopropyl alcohol, acetone, deionized water or absolute ethyl alcohol successively of spin coating piezoelectric polymer thin-film also can adopt other conventional cleaning agent and cleaning way cleaning.Then the substrate after cleaning is placed on sol evenning machine rotating disk, after vacuum suction fixed substrate, with nitrogen (N
2) dry up substrate, also can adopt other conventional inert gas, as argon gas (Ar) etc., but be not limited only to this;
(3) drop on the substrate after drying up in step (2) by what obtain in step (1) until spin coating solution, with specific spin coating rotating speed and spin-coating time spin-coated thin film, spin coating rotating speed is 1000 ~ 2000r/min, and spin-coating time is 30 ~ 240s;
(4) film sample obtained after spin coating in step (3) is placed on heating station, at the melt temperature (T of film
m) more than carry out annealing in process, annealing temperature is 145 ~ 160 DEG C, and annealing time is 15 ~ 240min;
(5) after annealing, gained film in step (4) is positioned over room temperature environment at once and cools, polymer carries out nonisothermal crystallization and forms the high transversal effect texturing piezoelectric polymer thin-film with the platelet that lies low in the process.
In above-mentioned preparation process, the good solvent of step (1) described P (VDF-TrFE) is the organic solvent that can dissolve P (VDF-TrFE), single solvent or mixed solvent, single solvent is wherein selected from the one in the organic solvents such as acetone (PA), butanone (MEK), cyclohexanone (CYC) and dimethyl formamide (DMF), be preferably MEK or CYC, but be not limited only to this; Described mixed solvent is the mixed solvent be made up of two in above-mentioned single solvent kind or more, but is not limited only to this.
In above-mentioned preparation process, the described inorganic substrate of step (2) or organic substrate are non-conducting substrate or conductive substrate, be selected from high resistant Si sheet, low-resistance Si sheet, gold-plated Si sheet (Si/Au), platinum plating Si sheet (Si/Pt), plating tantalum Si sheet (Si/Ta), titanizing Si sheet (Si/Ti), glass, ito glass, polyimide base film (PI), polyethylene terephthalate substrate (PET), polymethyl methacrylate base sheet (PMMA), cover the polyimide base film (PI/ITO) of ITO, one in the substrates such as the polyethylene terephthalate substrate (PET/ITO) covering ITO and the polymethyl methacrylate base sheet (PMMA/ITO) covering ITO, but be not limited only to this.
In above-mentioned preparation process, the method for manufacturing thin film of step (3) also can be the solution methods of simple cast.
The film that 200nm is greater than for thickness also can step (3) or with step (3) ~ (5) for the cycle carries out repetitive operation and obtain, spin coating solution concentration wherein, spin coating rotating speed, spin-coating time, annealing temperature, annealing time can adjust within each cycle.
Texturing piezoelectric polymer thin-film provided by the invention, its piezo-electric traverse effect is greater than the piezo-electric traverse effect without the corresponding same component film of texturing process, has applications well prospect in the piezoelectric thin film device of the high piezo-electric traverse effect of various needs.The preparation method of this high transversal effect piezoelectric polymer thin-film that the present invention provides simultaneously, has equipment simple, easy and simple to handle, is easy to the advantages such as production.
Accompanying drawing explanation
The thickness that Fig. 1,150 DEG C of annealing in process obtain is about atomic force microscope (AFM) shape appearance figure of high transversal effect texturing piezoelectricity P (VDF-TrFE) (molar content of VDF the is 70%) film of 100nm.
The thickness that Fig. 2,150 DEG C of annealing in process obtain is about horizontal piezoelectric forces microscopy (PFM) amplitude image of high transversal effect texturing piezoelectricity P (VDF-TrFE) (molar content of VDF the is 70%) film of 100nm.
The thickness that Fig. 3,150 DEG C of annealing in process obtain is about the horizontal piezoelectric response change butterfly curve of high transversal effect texturing piezoelectricity P (VDF-TrFE) (molar content of VDF the is 70%) film of 100nm.
The thickness that Fig. 4,150 DEG C of annealing in process obtain is about the longitudinal P FM amplitude image of high transversal effect texturing piezoelectricity P (VDF-TrFE) (molar content of VDF the is 70%) film of 100nm.
The thickness that Fig. 5,150 DEG C of annealing in process obtain is about longitudinal piezoelectric response change butterfly curve of high transversal effect texturing piezoelectricity P (VDF-TrFE) (molar content of VDF the is 70%) film of 100nm.
Fig. 6, be about the AFM shape appearance figure of 100nmP (VDF-TrFE) (molar content of VDF is 70%) film without the thickness of nonisothermal crystallization process.
Fig. 7, be about the horizontal PFM amplitude image of 100nmP (VDF-TrFE) (molar content of VDF is 70%) film without the thickness of nonisothermal crystallization process.
Fig. 8, to be about the horizontal piezoelectric response change butterfly curve of 100nmP (VDF-TrFE) (molar content of VDF is 70%) film without the thickness of nonisothermal crystallization process.
Fig. 9, be about the longitudinal P FM amplitude image of 100nmP (VDF-TrFE) (molar content of VDF is 70%) film without the thickness of nonisothermal crystallization process.
Figure 10, to be about longitudinal piezoelectric response change butterfly curve of 100nmP (VDF-TrFE) (molar content of VDF is 70%) film without the thickness of nonisothermal crystallization process.
Change butterfly curve (Fig. 8 and Figure 10) with the piezoelectric response of general thin to contrast and can find out, the horizontal piezoelectric response (Fig. 3 and Fig. 5) that textured thin film is significantly improved, and the reduction of adjoint longitudinal piezoelectric response.The transverse and longitudinal piezoelectric response ratio of the texturing film of Curves reaction improves about 4 ~ 5 times.
Embodiment
Below list preferred embodiment of the present invention, it is only used as explanation of the invention instead of restriction.
Embodiment 1:
Polyvinylidene fluoride-trifluoro-ethylene copolymer (molar content of VDF is 50%) is dissolved in acetone, obtains the solution that concentration is 1.0wt%.Si sheet is cleaned 5min respectively in isopropyl alcohol, acetone, deionized water for ultrasonic successively.Si sheet after cleaning is placed on sol evenning machine rotating disk, dries up substrate with nitrogen.P (VDF-TrFE) solution is dropped on Si sheet, then with the rotating speed spin coating 120s of 2000r/min.The P obtained after spin coating (VDF-TrFE) film sample to be placed on heating station annealing in process 15min at 145 DEG C, then film is removed heating station be positioned over room temperature environment cooling carry out nonisothermal crystallization, finally obtain high transversal effect texturing piezoelectricity P (VDF-TrFE) film that thickness is about 50nm.
Embodiment 2:
Polyvinylidene fluoride-trifluoro-ethylene copolymer (molar content of VDF is 60%) is dissolved in butanone, obtains the solution that concentration is 1.0wt%.By gold-plated Si sheet (Si/Au) successively difference ultrasonic cleaning 5min in isopropyl alcohol, acetone, deionized water.Si/Au sheet after cleaning is placed on sol evenning machine rotating disk, dries up substrate with nitrogen.P (VDF-TrFE) solution is dropped on Si/Au sheet, then with 1000r/min rotating speed spin coating 45s.The P obtained after spin coating (VDF-TrFE) film sample to be placed on heating station annealing in process 30min at 155 DEG C, then film is removed heating station be positioned over room temperature environment cooling carry out nonisothermal crystallization, finally obtain high transversal effect texturing piezoelectricity P (VDF-TrFE) film that thickness is about 160nm.
Embodiment 3:
Polyvinylidene fluoride-trifluoro-ethylene copolymer (molar content of VDF is 65%) is dissolved in cyclohexanone, obtains the solution that concentration is 1.0wt%.By platinum plating Si sheet (Si/Pt) successively difference ultrasonic cleaning 5min in isopropyl alcohol, acetone, deionized water, then the Si/Pt sheet after cleaning is placed on sol evenning machine rotating disk, dries up substrate with nitrogen.P (VDF-TrFE) solution is dropped on Si/Pt sheet, then with the rotating speed spin coating 60s of 2000r/min.The P obtained after spin coating (VDF-TrFE) film sample to be placed on heating station annealing in process 60min at 160 DEG C, then film is removed heating station be positioned over room temperature environment cooling carry out nonisothermal crystallization, finally obtain high transversal effect texturing piezoelectricity P (VDF-TrFE) film that thickness is about 120nm.
Embodiment 4:
Polyvinylidene fluoride-trifluoro-ethylene copolymer (molar content of VDF is 75%) is dissolved in dimethyl formamide, obtains the solution that concentration is 2.5wt%.By glass substrate successively difference ultrasonic cleaning 5min in isopropyl alcohol, acetone, deionized water, then the glass substrate after cleaning is placed on sol evenning machine rotating disk, dries up substrate with nitrogen.P (VDF-TrFE) solution is dropped on glass substrate, then with the rotating speed spin coating 90s of 2000r/min.The P obtained after spin coating (VDF-TrFE) film sample to be placed on heating station annealing in process 75min at 150 DEG C, then film is removed heating station be positioned over room temperature environment cooling carry out nonisothermal crystallization, finally obtain high transversal effect texturing piezoelectricity P (VDF-TrFE) film that thickness is about 200nm.
Embodiment 5:
Polyvinylidene fluoride-trifluoro-ethylene copolymer (molar content of VDF is 80%) is dissolved in butanone, obtains the solution that concentration is 3.5wt%.By ito glass substrate successively ultrasonic cleaning in isopropyl alcohol, acetone, absolute ethyl alcohol, then the ito glass substrate after cleaning is placed on sol evenning machine rotating disk, dries up substrate with argon gas.P (VDF-TrFE) solution is dropped on the ito glass substrate after drying up, then with the rotating speed spin coating 120s of 2000r/min.The P obtained after spin coating (VDF-TrFE) film sample to be placed on heating station annealing in process 90min at 155 DEG C, then film is removed heating station be positioned over room temperature environment cooling carry out nonisothermal crystallization, finally obtain high transversal effect texturing piezoelectricity P (VDF-TrFE) film that thickness is about 220nm.
Embodiment 6:
Polyvinylidene fluoride-trifluoro-ethylene copolymer (molar content of VDF is 82%) is dissolved in cyclohexanone, obtains the solution that concentration is 4.5wt%.By polyimide base film (PI) successively difference ultrasonic cleaning 5min in isopropyl alcohol, acetone, deionized water, then the PI substrate after cleaning is placed on sol evenning machine rotating disk, dries up substrate with argon gas.4.5wt%P (VDF-TrFE) solution is dropped on PI substrate, then with the rotating speed spin coating 30s of 2000r/min.The P obtained after spin coating (VDF-TrFE) film sample to be placed on heating station annealing in process 180min at 155 DEG C, then film is removed heating station cooling and carry out nonisothermal crystallization, finally obtain high transversal effect texturing piezoelectricity P (VDF-TrFE) film that thickness is about 300nm.
Embodiment 7:
Polyvinylidene fluoride-trifluoro-ethylene copolymer (molar content of VDF is 70%) is dissolved in the mixed solvent of acetone and dimethyl formamide, obtains the solution that concentration is 5.4wt% and 10.0wt%.To polyethylene terephthalate substrate (PET/ITO) ultrasonic cleaning in isopropyl alcohol, acetone, absolute ethyl alcohol successively of ITO be covered, and then the PET/ITO substrate after cleaning will be placed on sol evenning machine rotating disk, dry up substrate with argon gas.Ground floor film preparation: drop on PET/ITO substrate by 5.4wt%P (VDF-TrFE) solution, then with the rotating speed spin coating 60s of 1000r/min.The film sample obtained after spin coating to be placed on heating station annealing in process 45min at 155 DEG C, then film to be removed heating station and be positioned over room temperature environment cooling and carry out nonisothermal crystallization.With similarity condition repeated deposition and annealing nonisothermal crystallization step 5 time, finally obtain high transversal effect texturing piezoelectricity P (VDF-TrFE) film that thickness is about 2 μm.
Embodiment 8:
Use preparation method of the present invention, 150 DEG C of annealing in process obtain high transversal effect texturing piezoelectricity P (VDF-TrFE) (molar content of VDF the is 70%) film that thickness is about 100nm, and the thickness simultaneously prepared without nonisothermal crystallization process is about 100nmP (VDF-TrFE) (molar content of VDF is 70%) film.Atomic force microscope (AFM) shape appearance figure of both contrasts, horizontal piezoelectric forces microscopy (PFM) amplitude image and horizontal piezoelectric response change butterfly curve, longitudinal P FM amplitude image and longitudinal piezoelectric response change butterfly curve.Accordingly result is shown in Fig. 1 ~ 10.
Fig. 1 ~ Fig. 5 is followed successively by AFM shape appearance figure (Fig. 1), horizontal PFM amplitude image (Fig. 2), horizontal piezoelectric response change butterfly curve (Fig. 3), longitudinal P FM amplitude image (Fig. 4), longitudinal piezoelectric response change butterfly curve (Fig. 5) that thickness that 150 DEG C of annealing in process obtain is about high transversal effect texturing piezoelectricity P (VDF-TrFE) (molar content of VDF the is 70%) film of 100nm.
Fig. 6 ~ Figure 10 thickness be followed successively by without nonisothermal crystallization process is about AFM shape appearance figure (Fig. 6), horizontal PFM amplitude image (Fig. 7), horizontal piezoelectric response change butterfly curve (Fig. 8), longitudinal P FM amplitude image (Fig. 9), longitudinal piezoelectric response change butterfly curve (Figure 10) of 100nmP (VDF-TrFE) (molar content of VDF is 70%) film.
Change butterfly curve (Fig. 8 and Figure 10) with the piezoelectric response of general thin to contrast and can find out, the horizontal piezoelectric response (Fig. 3 and Fig. 5) that textured thin film is significantly improved, and the reduction of adjoint longitudinal piezoelectric response.The transverse and longitudinal piezoelectric response ratio of the texturing film of Curves reaction improves about 4 ~ 5 times.
The present invention can also have various embodiments; when not deviating from essence of the present invention; those of ordinary skill in the art can openly make various corresponding change and modification according to of the present invention, but these corresponding changes and modification all should belong to the protection range of the claim appended by the present invention.
Claims (9)
1. one kind high transversal effect texturing piezoelectric polymer thin-film, it is characterized in that, described piezoelectric polymer thin-film is made up of polyvinylidene fluoride-trifluoro-ethylene copolymer, and in wherein said polyvinylidene fluoride-trifluoro-ethylene copolymer, the molar content of vinylidene fluoride is 50% ~ 82%.
2. texturing piezoelectric polymer thin-film according to claim 1, is characterized in that, the piezo-electric traverse effect of described film is greater than the piezo-electric traverse effect of the corresponding same component film without texturing process.
3. texturing piezoelectric polymer thin-film according to claim 1 and 2, is characterized in that, film thickness scope is 50nm ~ 2 μm.
4. a preparation method for high transversal effect texturing piezoelectric polymer thin-film, is formed primarily of following steps:
(1) polyvinylidene fluoride-trifluoro-ethylene copolymer is dissolved in organic solvent, obtain the solution that concentration is 1.0wt% ~ 10.0wt%, in wherein said polyvinylidene fluoride-trifluoro-ethylene copolymer, the molar content of vinylidene fluoride is 50% ~ 82%, and described organic solvent is the good solvent of polyvinylidene fluoride-trifluoro-ethylene copolymer;
(2) conventional cleaning agent and cleaning way is adopted to treat the inorganic substrate of spin coating piezoelectric polymer thin-film or organic substrate cleans, with inert blowing gas butt sheet;
(3) solution obtained in step (1) is dropped on step (2) gained substrate, with specific rotation speeds and spin-coating time spin-coated thin film;
(4) be placed on heating station by the film sample obtained in step (3), more than the melt temperature of film, carry out annealing crystallization process, annealing temperature is 145 ~ 160 DEG C, and annealing time is 15 ~ 240min;
(5), after annealing, rear film of being annealed by gained is positioned over room temperature environment and cools, and nonisothermal crystallization appears in film in the process, forms high transversal effect texturing piezoelectric polymer thin-film.
5. preparation method according to claim 4, it is characterized in that, the good solvent of the described polyvinylidene fluoride-trifluoro-ethylene copolymer of step (1) is to dissolve the single of polyvinylidene fluoride-trifluoro-ethylene copolymer or mixed organic solvents, wherein, described single solvent is selected from the one in acetone, butanone, cyclohexanone and dimethyl formamide; Described mixed solvent is by two or more solvents mixed in acetone, butanone, cyclohexanone and dimethyl formamide.
6. preparation method according to claim 4, is characterized in that, the described inorganic substrate of step (2) is selected from the one in the sheet glass of Si sheet, plating Si sheet, sheet glass and electrode coating.
7. preparation method according to claim 4, it is characterized in that, step (2) described organic substrate is selected from the one in the organic substrate of polyimide base film, polyethylene terephthalate substrate, polymethyl methacrylate base sheet and electrode coating.
8. preparation method according to claim 4, is characterized in that, the described conventional cleaning agent of step (2) is one or more in acetone, isopropyl alcohol, ethanol and deionized water, and described cleaning way is for soaking and ultrasonic cleaning.
9. preparation method according to claim 4, is characterized in that, film thickness being greater than to 200nm with step (3) or with step (3) ~ (5) for the cycle carries out repetitive operation and obtain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410553618.0A CN105576117A (en) | 2014-10-17 | 2014-10-17 | Texture piezoelectric polymer film of high transverse effect and preparation method of film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410553618.0A CN105576117A (en) | 2014-10-17 | 2014-10-17 | Texture piezoelectric polymer film of high transverse effect and preparation method of film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105576117A true CN105576117A (en) | 2016-05-11 |
Family
ID=55886033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410553618.0A Pending CN105576117A (en) | 2014-10-17 | 2014-10-17 | Texture piezoelectric polymer film of high transverse effect and preparation method of film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105576117A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109972136A (en) * | 2019-03-26 | 2019-07-05 | 浙江大学 | A kind of preparation method of oriented growth P (VDF-TrFE) film |
| CN110283346A (en) * | 2019-07-03 | 2019-09-27 | 北京化工大学 | Thin polymer film and preparation method thereof and capacitor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007010491A2 (en) * | 2005-07-19 | 2007-01-25 | Universidade Do Minho | Non-porous polyvinylidene fluoride (pvdf) films in the beta phase and processing method thereof |
| US20100060109A1 (en) * | 2008-09-04 | 2010-03-11 | University Of Massachusetts | Nanotubes, nanorods and nanowires having piezoelectric and/or pyroelectric properties and devices manufactured therefrom |
| CN102956812A (en) * | 2012-10-24 | 2013-03-06 | 西安交通大学 | Application and method for preparing electret piezoelectric material from head-head connected hydrogenation P (VDF-TrFE) |
-
2014
- 2014-10-17 CN CN201410553618.0A patent/CN105576117A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007010491A2 (en) * | 2005-07-19 | 2007-01-25 | Universidade Do Minho | Non-porous polyvinylidene fluoride (pvdf) films in the beta phase and processing method thereof |
| US20100060109A1 (en) * | 2008-09-04 | 2010-03-11 | University Of Massachusetts | Nanotubes, nanorods and nanowires having piezoelectric and/or pyroelectric properties and devices manufactured therefrom |
| CN102956812A (en) * | 2012-10-24 | 2013-03-06 | 西安交通大学 | Application and method for preparing electret piezoelectric material from head-head connected hydrogenation P (VDF-TrFE) |
Non-Patent Citations (3)
| Title |
|---|
| DONG GUO, ET AL.: "Impact of Confinement-Induced Cooperative Molecular Orientation Change on the Ferroelectric Size Effect in Ultrathin P(VDF-TrFE) Films", 《MACROMOLECULES》 * |
| DONG GUO, ET AL.: "Thermally Induced Cooperative Molecular Reorientation and Nanoscale Polarization Switching Behaviors of Ultrathin Poly(vinylidene fluoride-trifluoroethylene) Films", 《THE JOURNAL OF PHYSICAL CHEMISTRY》 * |
| DONG GUO,ET AL.: "Thermally Induced Cooperative Molecular Reorientation and Nanoscale Polarization Switching Behaviors of Ultrathin Poly(vinylidene fluoride-trifluoroethylene) Films", 《THE JOURNAL OF PHYSICAL CHEMISTRY B》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109972136A (en) * | 2019-03-26 | 2019-07-05 | 浙江大学 | A kind of preparation method of oriented growth P (VDF-TrFE) film |
| CN110283346A (en) * | 2019-07-03 | 2019-09-27 | 北京化工大学 | Thin polymer film and preparation method thereof and capacitor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sabry et al. | PVDF: ZnO/BaTiO3 as high out-put piezoelectric nanogenerator | |
| Jiang et al. | Flexible piezoelectric pressure tactile sensor based on electrospun BaTiO3/poly (vinylidene fluoride) nanocomposite membrane | |
| Hu et al. | Improved piezoelectric sensing performance of P (VDF–TrFE) nanofibers by utilizing BTO nanoparticles and penetrated electrodes | |
| Li et al. | Enhanced piezoelectric output of the PVDF-TrFE/ZnO flexible piezoelectric nanogenerator by surface modification | |
| Wu et al. | Polymorphism, piezoelectricity and sound absorption of electrospun PVDF membranes with and without carbon nanotubes | |
| Gebrekrstos et al. | Nanoparticle-enhanced β-phase formation in electroactive PVDF composites: a review of systems for applications in energy harvesting, EMI shielding, and membrane technology | |
| Gheibi et al. | Piezoelectric electrospun nanofibrous materials for self-powering wearable electronic textiles applications | |
| CN104153128B (en) | A kind of preparation method based on ordered arrangement distorted-structure flexible extensible device | |
| Wu et al. | Power generation by PVDF-TrFE/graphene nanocomposite films | |
| Ma et al. | Lamellar crystal orientations biased by crystallization kinetics in polymer thin films | |
| US11235496B2 (en) | One-step solution casting method for preparing polyvinylidene fluoride-based pyroelectric polymer film | |
| Gebrekrstos et al. | Journey of electroactive β-polymorph of poly (vinylidenefluoride) from crystal growth to design to applications | |
| US10510463B2 (en) | Wavy metal nanowire network thin film, stretchable transparent electrode including the metal nanowire network thin film and method for forming the metal nanowire network thin film | |
| Chen et al. | Investigation of PVDF-TrFE composite with nanofillers for sensitivity improvement | |
| Eom et al. | Tailored poly (vinylidene fluoride-co-trifluoroethylene) crystal orientation for a triboelectric nanogenerator through epitaxial growth on a chitin nanofiber film | |
| Anand et al. | Role of vertically aligned and randomly placed zinc oxide (ZnO) nanorods in PVDF matrix: Used for energy harvesting | |
| KR101630817B1 (en) | Wavy metal nanowire network, flexible transparent electrode comprising the same, and the preparation method thereof | |
| CN112625382A (en) | Flexible piezoelectric composite material, flexible electronic skin and preparation method thereof | |
| Li et al. | Solution processable poly (vinylidene fluoride)-based ferroelectric polymers for flexible electronics | |
| CN105576117A (en) | Texture piezoelectric polymer film of high transverse effect and preparation method of film | |
| CN103789741A (en) | Method for preparing drape-based metal surface nanostructure | |
| Guo et al. | Epitaxial crystallization of isotactic poly (methyl methacrylate) from different states on highly oriented polyethylene thin film | |
| US9349995B2 (en) | Hybrid organic/inorganic eutectic solar cell | |
| CN106876577A (en) | DAST flexible compound piezoelectrics and preparation method thereof | |
| CN109972136B (en) | Preparation method of oriented growth P (VDF-TrFE) film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160511 |
|
| RJ01 | Rejection of invention patent application after publication |