CN105914121A - Triangle mono-crystalline silicon support beam structure type X-ray silicon nitride window construction and the manufacturing method thereof - Google Patents

Triangle mono-crystalline silicon support beam structure type X-ray silicon nitride window construction and the manufacturing method thereof Download PDF

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CN105914121A
CN105914121A CN201610265059.2A CN201610265059A CN105914121A CN 105914121 A CN105914121 A CN 105914121A CN 201610265059 A CN201610265059 A CN 201610265059A CN 105914121 A CN105914121 A CN 105914121A
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silicon
silicon nitride
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CN105914121B (en
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王建平
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Suzhou In-Situ Chip Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/16—Vessels; Containers; Shields associated therewith
    • H01J35/18—Windows
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K7/00—Gamma- or X-ray microscopes

Abstract

The invention relates to the triangle mono-crystalline silicon support beam structure type X-ray silicon nitride window construction and the manufacturing method thereof. The method comprises: growing through silicon nitride film mask layers; conducting lithography and etching; conducting solution based erosion; growing silicon nitride films; carrying out backside overlaying and etching; and finally obtaining a finished product through solution based etching technology that constitutes a thin layer triangle shape structure frame array between which is the silicon nitride window. With the invention, a thicker beam is made with a more stable structure. The manufacturing technology for such construction is also simple.

Description

Triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure and preparation method thereof
Technical field
The present invention relates to a kind of silicon nitride window and preparation method thereof, particularly relate to a kind of triangle monocrystal silicon and prop up Support fine strain of millet structural formula X-ray silicon nitride window outlet structure and preparation method thereof.
Background technology
X-ray fluorescence analyzer, the energy dispersion spectral analysis system (EDS) of SEM, the space of x-ray apparatus Application and other X-ray equipments many are required to the pressure of high-quality and tolerate high low-energy X-ray (soft X penetrates Line) transmitance window.X-ray window need to meet ultra-thin, high temperature resistant, vibration resistance, mechanical strength high, Supporting construction occupied area is less than 25% and is resistant to the requirements such as at least one atmospheric pressure difference, to ensure The absorbance of X-ray and the vacuum requirement of X-ray equipment.This just material property, knot to X-ray window Structure design proposes higher requirement with preparation technology.
The metallic beryllium of low atomic number has good X-ray transparent rate, but its mechanical strength is poor, thin Film thickness 1um to be reached, the X-ray transparent rate causing entirety is extremely low.It addition, the corrosion resistance of beryllium Poor, X-ray transparent rate can be caused after passivation to reduce further.
Artificial diamond film is another kind of X-ray window, and relative to metal, it has many good qualities.Such as Mechanical strength is high and is resistant to high temperature.But the thickness of artificial diamond film remains hundreds of nanometers Magnitude, causes X-ray to have significantly absorption in 282eV to 800eV part.Polymer also can be as X The common used material of ray window, has an advantage in that the flexible polymer of hundreds of nanometer thickness can pass through X well Ray, and it is resistant to different draught heads.
But, the temperature tolerance of polymer is poor, strongly limit its application conditions.Simultaneously because polymer pair Poor in the block of gas diffusion, it is impossible to ensure the air-tightness of window.
From the point of view of further, the silicon nitride film that semicon industry uses, not only there is extraordinary intensity, all Even property, temperature tolerance and air-tightness, and the high temperature of 900 degrees Celsius can be tolerated.Owing to silicon nitride film can Within being as thin as 100nm, grenz ray transmitance is far above polymer, diamond and beryllium film window. In recent years, the non-pressure X-ray window of silicon nitride film processing procedure have been widely used for carrying synchrotron radiation soft In X-ray sample.
At present, the key technology of pressure silicon nitride film X-ray window be support silicon nitride film girder construction and Micro-nano preparation method, while guaranteeing its intensity, has less Area of bearing.
Within 2013, Pekka seminar utilizes LPCVD deposit polycrystalline silicon as the silicon nitride film X of thin support beam Ray window, then polysilicon is patterned and etches, to prepare support beam structure.This is also current The main preparation methods of silicon nitride film X-ray window.
But, the structure of the window of this technical limit spacing is complex and high cost, and its polysilicon support beam needs to use LPCVD deposition forms, and deposition cost high for LPCVD causes the support beam of more than 10um thickness the most not Can realize.
Meanwhile, the prior art is used also to have the disadvantage that
1, the epitaxially grown polysilicon support beam obtained, owing to cost and technique limit, polysilicon layer 5um Above high cost, can only realize the support beam structure within 20um.
2, the polysilicon of epitaxial growth, then exists on micron-sized thickness that stress distribution is uneven and defect is many etc. Problem, directly affects the strength stability of support beam.
3, manufacture extensional mode polysilicon support beam and further relate to 10um thickness LPCVD polycrystalline growth technique, extension The high-temperature technology that formula has more, makes the uncertain increase of whole technological process, and yield rate reduces.
Because above-mentioned defect, the design people, the most in addition research and innovation, to founding a kind of triangle Single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure and preparation method thereof so that it is have more in industry Value.
Therefore, it is badly in need of a kind of technique succinct, reliable and prepares the support beam structure supporting silicon nitride film window, Make it can tolerate more than one atmospheric pressure poor.
Summary of the invention
For solving above-mentioned technical problem, it is an object of the invention to provide a kind of triangle single-crystal silicon support fine strain of millet structure Formula X ray silicon nitride window outlet structure and preparation method thereof.
The triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure of the present invention, it is characterised in that: Include monocrystal silicon housing, silicon is distributed below described monocrystal silicon housing rebasing, be distributed on described silicon is rebasing Deep four rib grooves, are distributed the silicon nitride film of low stress LPCVD growth, described nitrogen on described deep four rib grooves Above SiClx film, being placed with single-crystal silicon support beam, described single-crystal silicon support distance between girders is arranged, and constitutes thin layer three Angular structure frame array, forms silicon nitride window between described frame array.
Further, above-mentioned triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure, its In, the size of described monocrystal silicon housing is 10mm × 10mm, described silicon nitride window port area a size of 5.5mm × 5.5mm, single pane a size of 200um × 660um in described thin layer triangular structure frame array, institute State silicon nitride film and be positioned at the bottom of four deep for silicon substrate 100um to 200um rib grooves, described thin layer triangle The thickness of structural framing array is 30um.
Triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure preparation method, it includes following Step:
Step one, mask layer nitride film growth；
Step 2, photoetching and etching；
Step 3, wet etching；
Step 4, nitride film growth；
Step 5, back side alignment and etching；
Step 6, wet-etching technology.
Further, prepared by above-mentioned triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure Method, wherein, in described step one, selects 100 crystalline phases, and silicon chip is entered by the middle resistance silicon chip that 200um is thick Column criterion quasiconductor cleans, and uses LPCVD at silicon chip both sides grown silicon nitride thin film.
Further, above-mentioned triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure system Preparation Method, wherein, in described step 2, carries out photoetching to the silicon back side, and uses reactive ion etching equipment (RIE) unprotected silicon nitride film is etched away, use hot acetone solution to remove photoresist.
Further, above-mentioned triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure system Preparation Method, wherein, in described step 3, loads silicon chip in corrosive liquid, is heated to 70 degrees Celsius to 90 Degree Celsius, after etching 3 to 5 hours, use step instrument tracking measurement, control etching depth, prepare Four rib groove structures.
Further, above-mentioned triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure system Preparation Method, wherein, described corrosive liquid is KOH, is heated to 80 degrees Celsius, etches 4 hours.
Further, above-mentioned triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure system Preparation Method, wherein, in described step 4, the silicon chip crossed by wet etching is carried out, and proper alignment exists In quartz boat, put in LPCVD equipment, by low stress nitride silicon technology, generate silicon nitride film, i.e. exist Silicon chip two sides growth 50nm silicon nitride film, now four rib inside grooves also grow 50nm low stress SiNx Film.
Further, above-mentioned triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure system Preparation Method, wherein, in described step 5, uses silicon nitride film to do mask, and use model is AZ5214 Photoresist carry out relative photo photoresist step, realize double-sided overlay technique at silicon chip back side, pass through RIE afterwards Technique, the silicon nitride layer of etch front.
Further, above-mentioned triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure system Preparation Method, wherein, in described step 6, removes photoresist etched silicon chip, loads in the quartz gaily decorated basket, puts into In corrosive liquid, it is etched to the whole printing opacity of window portion.
By such scheme, the present invention at least has the advantage that
1, thicker support beam can be realized: the structure of integral type can control by adjusting the wet etching degree of depth Single-crystal silicon support depth of beam and width, it is possible to achieve from the support beam structure of 5um to 80um differing heights. Thereby, it is possible to avoid epitaxially grown polysilicon support beam, owing to cost and technique limit, polysilicon layer 5um Above high cost, can only realize the defect of support beam structure within 20um.
2, support beam structure is stable, and it is high-purity that the single crystal silicon material that the support beam of integral type uses is that fab passes through Degree crystal pulling is made, and structure is single, stable.Avoid the occurrence of epitaxially grown polysilicon, at micron-sized thickness On then have that stress distribution is uneven and the problem such as defect is many, directly affect the lacking of strength stability of support beam Fall into.
3, preparation technology is implemented simple: the preparation technology of integral type support beam structure only has photoetching, silicon nitride raw Length and wet etching silicon these three standard technology.
Described above is only the general introduction of technical solution of the present invention, in order to better understand the technology of the present invention Means, and can being practiced according to the content of description, below with presently preferred embodiments of the present invention and coordinate attached After figure describes in detail such as.
Accompanying drawing explanation
Fig. 1 is the structural representation of triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure side Figure.
Fig. 2 is the Facad structure signal of triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure Figure.
Fig. 3 is silicon nitride window structural representation after mask layer nitride film growth.
Fig. 4 is silicon nitride window structural representation after photoetching with etching.
Fig. 5 is silicon nitride window structural representation after wet etching.
Fig. 6 is silicon nitride window structural representation after nitride film growth.
Fig. 7 is the structural representation after silicon nitride window alignment overleaf and etching.
Fig. 8 is silicon nitride window structural representation after wet-etching technology.
In figure, the implication of each reference is as follows.
1 monocrystal silicon housing 2 silicon is rebasing
3 silicon nitride film 4 single-crystal silicon support beams
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment, the detailed description of the invention of the present invention is described in further detail.With Lower embodiment is used for illustrating the present invention, but is not limited to the scope of the present invention.
Triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure as shown in Figure 1, Figure 2, its with Many differences are: it includes monocrystal silicon housing 1, and silicon rebasing 2 is distributed below monocrystal silicon housing 1. Meanwhile, deep four rib grooves on silicon rebasing 2, are distributed, low stress LPCVD are distributed on these deep four rib grooves raw Long silicon nitride film 3.Further, above silicon nitride film 3, it is placed with single-crystal silicon support beam 4, described monocrystal silicon Support beam 4 is intervally arranged, and constitutes thin layer triangular structure frame array, forms nitrogen between described frame array SiClx window.
From the point of view of the present invention one preferably embodiment, in order to realize the design of ultrathin, and have preferably Stability, the size of the monocrystal silicon housing of the finished product of the present invention is 10mm × 10mm, silicon nitride window mouth region Domain sizes is 5.5mm × 5.5mm, single pane a size of 200um in thin layer triangular structure frame array × 660um, silicon nitride film is positioned at the bottom of four rib grooves of silicon substrate, thin layer triangular structure frame array Thickness is 30um.
From the point of view of actual enforcement, as shown in figures 3-8, the invention provides a kind of triangle single-crystal silicon support fine strain of millet Structural formula X-ray silicon nitride window outlet structure preparation method, it is particular in that and comprises the following steps:
First, mask layer nitride film growth.Can be selected for 100 crystalline phases, the middle resistance silicon chip that 200um is thick, right Silicon chip carries out standard semiconductor cleaning, uses LPCVD at silicon chip both sides grown silicon nitride thin film.This silicon nitride Thin film is 101.4nm through film thickness gauge detection thickness, and uniformity of film is 1.31%.
Afterwards, photoetching and etching are carried out.During this period, the silicon back side is carried out photoetching, and uses reactive ion Unprotected silicon nitride film is etched away by etching apparatus (RIE), uses hot acetone solution to remove photoresist.
Then, wet etching is used to process.Specifically, silicon chip is loaded a certain proportion of KOH rotten In erosion liquid (preferably 30%), the temperature of 80 degrees Celsius is coordinated to carry out.After etching 3 to 5 hours, use Step instrument tracking measurement, accurately controls etching depth and prepares four rib groove structures to 100um to 200um. Specifically, it is preferably 170um when of actual enforcement.Its reason is, uses 200um in the present embodiment Thick silicon chip is as raw material, and general proportions is between silicon materials thickness is to 50% to 98%.During this period, By finding after multiple comparison test, according to conventional process throughput, etch 4 hours, can play relatively Good effect.
Subsequently, nitride film growth is started.During this period, first the silicon chip that wet etching is crossed is carried out. After cleaning, by silicon chip proper alignment in quartz boat, put in LPCVD equipment.Then, by low Stress nitride silicon technology, generates silicon nitride film.Specifically, it is simply that grow 50nm silicon nitride on silicon chip two sides Film, now four rib inside grooves also grow 50nm low stress nitride silicon fiml.In conjunction with LPCVD cvd nitride From the point of view of the reaction equation of silicon:
3SiH2Cl2(gaseous state)+4NH3(gaseous state) → Si3N4(solid-state)+6HCl (gaseous state)+6H2(gaseous state).
Then, back side alignment and etching are carried out.During this period, the present invention uses silicon nitride film to do mask, The photoresist using model to be AZ5214 carries out relative photo photoresist step.Meanwhile, realize at silicon chip back side two-sided Alignment process.Afterwards, by RIE technique, the silicon nitride layer of etch front.
Finally, wet-etching technology is used to complete subsequent step.Specifically, go for etched silicon chip Glue.Afterwards, load in the quartz gaily decorated basket, put in corrosive liquid, be etched to the whole printing opacity of window portion and all may be used. Integrity in view of window molding needs, and the corrosive liquid of employing is the KOH, Ke Yiqi of preferably 25% content To preferably effect.
After prepared by reality, wide 34um, the triangle ultra-narrow support beams of high 30um, single window can be obtained Lattice a size of 234 × 694 microns.Thus, the available most stable of feature of triangle, it is achieved single-crystal silicon support The vacuum-resistant film of beam.
For from the point of view of the voltage-withstand test that silicon nitride window is carried out, with epoxide resin vacuum glue by X in atmospheric environment Ray window and silicon base seal.The X-ray window that envelope has atmosphere gas again is placed in the vacuum chamber. Molecular pump is used to improve vacuum to 1x 10-5Bar.5 test windows that the present invention prepares all remain above Within 24 hours, do not rupture.
From the point of view of reality preparation and test, it is found that while the extra small accounting support beams knot that the present invention obtains Structure has preferable support performance, but, LPCVD the silicon nitride film strength grown also needs to further Improving, and the higher silicon nitride film intensity of stress is poor, the ratio defective product that can cause preparation is relatively low.Therefore, this Bright the preparation technology of silicon nitride window is improved, on affecting the air-flow of silicon nitride film stress, pressure the most simultaneously The LPCVD technological parameter such as power and temperature is adjusted, as shown in table 1.
Table 1: under different ammonias and dichlorosilane ratio and temperature parameter, silicon nitride film stress data.
By above-mentioned table 1, can obtain being applicable to the LPCVD parameter of the low stress SiNx of X-ray window.Tool For body, depositing temperature 850 DEG C, NH3And SiH2Cl2Ratio to 1:8, gas flow is 360sccm, The silicon nitride film stress prepared is minimum.
By above-mentioned character express and combine accompanying drawing it can be seen that use after the present invention, gather around and have the following advantages:
1, thicker support beam can be realized: the structure of integral type can control by adjusting the wet etching degree of depth Single-crystal silicon support depth of beam and width, it is possible to achieve from the support beam structure of 5um to 80um differing heights. Thereby, it is possible to avoid epitaxially grown polysilicon support beam, owing to cost and technique limit, polysilicon layer 5um Above high cost, can only realize the defect of support beam structure within 20um.
2, support beam structure is stable, and it is high-purity that the single crystal silicon material that the support beam of integral type uses is that fab passes through Degree crystal pulling is made, and structure is single, stable.Avoid the occurrence of epitaxially grown polysilicon, at micron-sized thickness On then have that stress distribution is uneven and the problem such as defect is many, directly affect the lacking of strength stability of support beam Fall into.
3, preparation technology is implemented simple: the preparation technology of integral type support beam structure only has photoetching, silicon nitride raw Length and wet etching silicon these three standard technology.
The above is only the preferred embodiment of the present invention, is not limited to the present invention, it is noted that For those skilled in the art, on the premise of without departing from the technology of the present invention principle, also Can make some improvement and modification, these improve and modification also should be regarded as protection scope of the present invention.

Claims (10)

1. triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure, it is characterised in that: bag Having included monocrystal silicon housing (1), described monocrystal silicon housing (1) lower section is distributed silicon rebasing (2), described silicon pad Deep four rib grooves are distributed at the end (2), on described deep four rib grooves, silicon nitride film (3), described nitrogen are distributed SiClx film (3) top, is placed with single-crystal silicon support beam (4), described single-crystal silicon support beam (4) interval row Cloth, constitutes thin layer triangular structure frame array, forms silicon nitride window between described frame array.
Triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window the most according to claim 1 Structure preparation method, it is characterised in that: the size of described monocrystal silicon housing (1) is 10mm × 10mm, Described silicon nitride window port area a size of 5.5mm × 5.5mm, in described thin layer triangular structure frame array Single pane a size of 200um × 660um, four ribs that described silicon nitride film (3) is positioned at silicon substrate composition are recessed The bottom of groove, the thickness of described thin layer triangular structure frame array is 30um.
3. triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure preparation method, its feature It is to comprise the following steps:
Step one, mask layer nitride film growth；
Step 2, photoetching and etching；
Step 3, wet etching；
Step 4, nitride film growth；
Step 5, back side alignment and etching；
Step 6, wet-etching technology.
Triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window the most according to claim 3 Structure preparation method, it is characterised in that: in described step one, selection hinders silicon chip, silicon chip is carried out standard Quasiconductor cleans, and uses LPCVD at silicon chip both sides grown silicon nitride thin film.
Triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window the most according to claim 3 Structure preparation method, it is characterised in that: in described step 2, the silicon back side is carried out photoetching, and uses reaction Unprotected silicon nitride film is etched away by ion etching equipment (RIE), uses hot acetone solution to remove photoresist.
Triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window the most according to claim 3 Structure preparation method, it is characterised in that: in described step 3, silicon chip is loaded in corrosive liquid, be heated to 70 Degree Celsius to 90 degrees Celsius, after etching 3 to 5 hours, use step instrument tracking measurement, control etching deep Degree, prepares four rib groove structures.
Triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window the most according to claim 6 Structure preparation method, it is characterised in that: described corrosive liquid is KOH, is heated to 80 degrees Celsius, etches 4 Individual hour.
Triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window the most according to claim 3 Structure preparation method, it is characterised in that: in described step 4, the silicon chip crossed by wet etching is carried out, And proper alignment is in quartz boat, put in LPCVD equipment, by low stress nitride silicon technology, generate Silicon nitride film, i.e. grows 50nm silicon nitride film on silicon chip two sides, and now four rib inside grooves also grow 50nm Low stress nitride silicon fiml.
Triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window the most according to claim 3 Structure preparation method, it is characterised in that: in described step 5, use silicon nitride film to do mask, carry out light Photoresist, realizes double-sided overlay technique at silicon chip back side, afterwards by RIE technique, and the silicon nitride of etch front Layer.
Triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window the most according to claim 3 Structure preparation method, it is characterised in that: in described step 6, etched silicon chip is removed photoresist, load quartz In the gaily decorated basket, put in corrosive liquid, be etched to the whole printing opacity of window portion.
CN201610265059.2A 2016-04-26 2016-04-26 Triangle single-crystal silicon support fine strain of millet structural formula X-ray silicon nitride window outlet structure and preparation method thereof Active CN105914121B (en)

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JP2020537328A (en) * 2017-10-13 2020-12-17 オックスフォード インストゥルメンツ エックス−レイ テクノロジー インコーポレイテッド Window members for X-ray devices
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