CN106024598A - 于阻障表面上的钴沉积 - Google Patents
于阻障表面上的钴沉积 Download PDFInfo
- Publication number
- CN106024598A CN106024598A CN201610339081.7A CN201610339081A CN106024598A CN 106024598 A CN106024598 A CN 106024598A CN 201610339081 A CN201610339081 A CN 201610339081A CN 106024598 A CN106024598 A CN 106024598A
- Authority
- CN
- China
- Prior art keywords
- cobalt
- base material
- barrier layer
- gas
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010941 cobalt Substances 0.000 title claims abstract description 205
- 229910017052 cobalt Inorganic materials 0.000 title claims abstract description 202
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title claims abstract description 174
- 230000004888 barrier function Effects 0.000 title claims abstract description 79
- 230000008021 deposition Effects 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 158
- 239000000463 material Substances 0.000 claims abstract description 134
- 238000000151 deposition Methods 0.000 claims abstract description 73
- 230000008569 process Effects 0.000 claims abstract description 62
- 239000001257 hydrogen Substances 0.000 claims abstract description 52
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 52
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000007789 gas Substances 0.000 claims abstract description 47
- 229910052802 copper Inorganic materials 0.000 claims abstract description 45
- 239000010949 copper Substances 0.000 claims abstract description 45
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000003153 chemical reaction reagent Substances 0.000 claims abstract description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 55
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 41
- 229910052721 tungsten Inorganic materials 0.000 claims description 24
- 239000010937 tungsten Substances 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 23
- 229910021529 ammonia Inorganic materials 0.000 claims description 22
- 241001597008 Nomeidae Species 0.000 claims description 21
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 21
- 150000002431 hydrogen Chemical class 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 15
- 229910052715 tantalum Inorganic materials 0.000 claims description 14
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 14
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 239000001307 helium Substances 0.000 claims description 8
- 229910052734 helium Inorganic materials 0.000 claims description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 7
- 238000005137 deposition process Methods 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- BSTAMHGGFKCCPX-UHFFFAOYSA-N C(=O)=CCCCC#C Chemical group C(=O)=CCCCC#C BSTAMHGGFKCCPX-UHFFFAOYSA-N 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 claims 15
- 125000004429 atom Chemical group 0.000 claims 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 238000011065 in-situ storage Methods 0.000 abstract description 7
- 239000004020 conductor Substances 0.000 abstract description 6
- 229910000881 Cu alloy Inorganic materials 0.000 abstract description 5
- CGHIBGNXEGJPQZ-UHFFFAOYSA-N 1-hexyne Chemical group CCCCC#C CGHIBGNXEGJPQZ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005019 vapor deposition process Methods 0.000 abstract 1
- 235000013495 cobalt Nutrition 0.000 description 157
- -1 tungsten nitride Chemical class 0.000 description 29
- 238000005240 physical vapour deposition Methods 0.000 description 21
- 239000002243 precursor Substances 0.000 description 19
- 150000001868 cobalt Chemical class 0.000 description 18
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 15
- 229910000077 silane Inorganic materials 0.000 description 12
- 239000003638 chemical reducing agent Substances 0.000 description 11
- 239000012071 phase Substances 0.000 description 9
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 7
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 210000005069 ears Anatomy 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 150000001408 amides Chemical class 0.000 description 4
- 239000003708 ampul Substances 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 4
- 239000003446 ligand Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 231100000719 pollutant Toxicity 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 241000196324 Embryophyta Species 0.000 description 3
- 241000219095 Vitis Species 0.000 description 3
- 235000009754 Vitis X bourquina Nutrition 0.000 description 3
- 235000012333 Vitis X labruscana Nutrition 0.000 description 3
- 235000014787 Vitis vinifera Nutrition 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 235000021028 berry Nutrition 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 150000001345 alkine derivatives Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910000085 borane Inorganic materials 0.000 description 2
- KDKYADYSIPSCCQ-UHFFFAOYSA-N but-1-yne Chemical group CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 description 2
- HWEQKSVYKBUIIK-UHFFFAOYSA-N cyclobuta-1,3-diene Chemical compound C1=CC=C1 HWEQKSVYKBUIIK-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005518 electrochemistry Effects 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 125000000018 nitroso group Chemical group N(=O)* 0.000 description 2
- WQIQNKQYEUMPBM-UHFFFAOYSA-N pentamethylcyclopentadiene Chemical compound CC1C(C)=C(C)C(C)=C1C WQIQNKQYEUMPBM-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical group CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- XASLQJDZDMHBEF-UHFFFAOYSA-N C(=O)=C1C(C=CC=C1)C#C Chemical group C(=O)=C1C(C=CC=C1)C#C XASLQJDZDMHBEF-UHFFFAOYSA-N 0.000 description 1
- QSNFOTSEFALLLC-UHFFFAOYSA-L C(=O)=[Co](I)I Chemical compound C(=O)=[Co](I)I QSNFOTSEFALLLC-UHFFFAOYSA-L 0.000 description 1
- KSHBKZVIDAJCJJ-UHFFFAOYSA-N C[Co]C1C=CC=C1 Chemical compound C[Co]C1C=CC=C1 KSHBKZVIDAJCJJ-UHFFFAOYSA-N 0.000 description 1
- 229910021012 Co2(CO)8 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- KOOADCGQJDGAGA-UHFFFAOYSA-N [amino(dimethyl)silyl]methane Chemical compound C[Si](C)(C)N KOOADCGQJDGAGA-UHFFFAOYSA-N 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001343 alkyl silanes Chemical group 0.000 description 1
- RMRFFCXPLWYOOY-UHFFFAOYSA-N allyl radical Chemical compound [CH2]C=C RMRFFCXPLWYOOY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 210000002469 basement membrane Anatomy 0.000 description 1
- LJIPSDSHKKWWIF-UHFFFAOYSA-N benzene but-1-yne Chemical group C1=CC=CC=C1.C(C)C#C LJIPSDSHKKWWIF-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- HXLVDKGPVGFXTH-UHFFFAOYSA-N butyl(dimethyl)silane Chemical compound CCCC[SiH](C)C HXLVDKGPVGFXTH-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- DDKMFOUTRRODRE-UHFFFAOYSA-N chloromethanone Chemical compound Cl[C]=O DDKMFOUTRRODRE-UHFFFAOYSA-N 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- OKCASTGIQUIGNR-UHFFFAOYSA-N cobalt trimethylphosphane Chemical compound [Co].CP(C)C OKCASTGIQUIGNR-UHFFFAOYSA-N 0.000 description 1
- IBZAAOVLBXXVHW-UHFFFAOYSA-N cobalt;ethene Chemical compound [Co].C=C IBZAAOVLBXXVHW-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 125000003678 cyclohexadienyl group Chemical group C1(=CC=CCC1)* 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- KJISMKWTHPWHFV-UHFFFAOYSA-N ethyl(dimethyl)silicon Chemical compound CC[Si](C)C KJISMKWTHPWHFV-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000002097 pentamethylcyclopentadienyl group Chemical group 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006884 silylation reaction Methods 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- 238000006227 trimethylsilylation reaction Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
本申请提供了于阻障表面上的钴沉积。本发明的实施例提供一种在一阻障层上沉积一钴层并接着沉积一导电材料,如铜或一铜合金于其上的工艺。在一实施例中,提供一沉积材料于一基材表面的方法,其包括以下步骤:在一基材上形成一阻障层,于气相沉积工艺期间曝露此基材至二钴六羰基丁基乙炔(CCTBA)及氢(H2)以在该阻障层上形成一钴层,及沉积一导电材料于此钴层之上。在某些范例中,此阻障层及/或此钴层于如热工艺、原位等离子体工艺或远距等离子体工艺的处理工艺期间可曝露至一气体或一试剂。
Description
本申请是PCT国际申请号为PCT/US2009/054307、国际申请日为2009年8月19日、进入中国国家阶段的申请号为200980134182.5,题为“于阻障表面上的钴沉积”的发明专利申请的分案申请。
技术领域
本发明的实施例大致有关用于制造电子及半导体组件的金属化工艺,更详言之,本发明的实施例为有关在沉积一导电层或接触材料于阻障层前沉积一钴层于阻障层的方法。
背景技术
铜为目前选用于多层金属化工艺的金属,其对组件的制造为重要的。多层互连迫使制造工艺要求高深宽比的孔的平坦化,该孔包括触点、通孔、线及其它特征。当特征具有较高深宽比时,填充此特征而不产生空隙或形变此特征的几何为更困难的。因制造者力求电路密度及质量,可靠地形成互连亦较困难。
因为铜相对低成本及工艺性质,铜的使用已扩展至市场,故半导体制造商持续关注经由减少铜扩散与抗湿润性以改良在铜与介电材料间的边界区的方法。因特征尺寸已减小,已开发数种工艺方法以制造铜互连。每一工艺方法可增加误差的可能性,如铜扩散越过边界区、铜结晶结构变形及抗湿润。物理气相沉积(PVD)、化学气相沉积(CVD)、原子层沉积(ALD)、电化学电镀(ECP)、无电沉积、化学机械研磨(CMP)、电化学机械研磨(ECMP)及其它沉积与移除铜层的方法利用机械、电或化学方法以操作形成互连的铜。可沉积阻障及覆盖层以含有铜。
过去,使用一具有锡、铝或镁的钽、氮化钽或铜合金层提供在铜与其它材料间的阻障层或一黏合促进剂。此些选择通常成本高且仅部份有效。因沿此边界区的铜原子在多重步骤半导体处理期间遭受一般在温度、压力、大气条件或其它工艺变量的改变,铜可能沿此边界区移动并成为黏聚的铜。铜亦可能沿此边界区较不均匀分散并成为湿润的铜。在边界区的此些改变包括铜原子的应力迁移及电迁移。铜穿越介电层或其它结构的应力迁移及电迁移的增加此生成结构的电阻且减少此生成组件的可靠度。
因此,存在一提升在阻障层上一导电层或接触材料的安定性与黏合性的需求。亦然,存在改良含铜层的电迁移可靠度的需求,尤其是对于铜线的形成,同时防止铜扩散入邻近的材料,如介电材料。
发明内容
本发明的实施例为提供在沉积一导电层于阻障层前沉积一钴层于阻障层的工艺。在一实施例中,提供一沉积材料于基材表面的方法,其包括在基材上形成一阻障层,曝露此基材至二钴六羰基丁基乙炔(CCTBA)及氢(H2)以于气相沉积工艺期间在该阻障层上形成一钴层,及沉积一导电材料于此钴层上。
在一范例中,基材可于热CVD工艺期间曝露于一含有CCTBA及氢的沉积气体。在另一范例中,基材可接着于ALD工艺期间曝露于CCTBA与氢。此基材在CVD或ALD工艺期间亦可加热至一自约100℃至约250℃范围间的温度。此钴层沉积少于约的厚度。
在某些范例中,阻障层及/或钴层在处理工艺期间可曝露至一气体或一试剂。此处理可为一热工艺、一原位等离子体工艺或一远程等离子体工艺。此气体或试剂可含有或为氮(N2)、氨(NH3)、氢(H2)、氨/氢混合物、硅烷、二硅烷、氦、氩、其之等离子体、其之衍生物或其等之组合。此阻障层或此钴层可曝露于此气体、试剂或等离子体约1秒至约30秒范围内的一段时间。此基材在处理工艺期间可加热至约50℃至约400℃的温度范围。
在某些范例中,此导电材料可含有铜或铜合金。此导电材料可含有一种晶层及块体层(bulk layer)。或者,此导电材料可直接沉积于此钴层上,如经由电化学电镀(ECP)工艺。在一范例中,一含有铜的种晶层可经由PVD工艺或CVD工艺沉积。在另一范例中,此块体层含有铜且可经由一ECP工艺沉积。此阻障层可含有钽、氮化钽、钛、氮化钛、钨、氮化钨、其之合金、其之衍生物或其等的组合。在一范例中,此阻障层可为一配置在钽层上的氮化钽层。
在另一实施例中,提供一种用于在一基材表面上沉积材料的方法,其包括以下步骤:在一基材上形成一阻障层,在预处理工艺期间曝露该阻障层至第一等离子体,曝露该基材至CCTBA及氢以于气相沉积工艺期间在该阻障层上形成一钴层,于后处理工艺期间曝露该钴层至一第二等离子体,及经由一气相沉积工艺沉积一铜层于该钴层上,如经由一PVD工艺或CVD工艺。
在另一实施例中,提供一种用于在一基材表面上沉积材料的方法,其包括以下步骤:在一基材上形成一阻障层,在预处理工艺期间曝露此阻障层至一等离子体,曝露该基材至CCTBA及一还原气体以于气相沉积工艺期间在该阻障层上形成一钴层,于后处理工艺期间曝露该钴层至一氢等离子体,及沉积一铜材料于该钴层之上。在一范例中,此用于沉积该钴层的气相沉积工艺及该后-处理工艺为依序重复以形成一钴材料。此钴材料含有多钴层,其中每一者在另一钴层沉积前已曝露至一氢等离子体。
附图说明
在前文概述的本发明的更详细描述可参考实施例,其之部份为说明于附图中,以此方式,本发明于前文述及的特征可更详尽的了解。然而,需了解附图仅为用以说明本发明的典型实施例,故因此不能被视为限制本发明的范畴,因为本发明容许其它等效的实施方面。
图1图示根据本文描述的一实施例说明一工艺的流程图;及
图2A-2F图示根据本文描述的一实施例在不同工艺步骤中基材的示意图。
具体实施方式
本发明的实施例为提供在沉积一导电层于阻障层前沉积一钴层于阻障层或层的方法。此钴层及阻障层可各自可选择地曝露至一处理工艺,如等离子体工艺或一热工艺。此导电层可含有铜或一铜合金且经由物理气相沉积(PVD)工艺、原子层沉积(ALD)工艺、电化学电(ECP)工艺或一无电沉积工艺沉积。此钴层改良铜边界区性质以促进黏合性、改良沟槽填充及电移动性能、减少扩散及黏聚并助长在工艺期间基材表面的均匀的粗糙度与湿润性。
图1图示一说明本发明实施例的工艺100的流程图。工艺100可用于在一基材上形成一互连或其它组件。在一实施例中,工艺100的步骤110-150可在基材200上进行,如在图2A-2F中图示。工艺100包括在一基材上沉积或形成一阻障层(步骤110),可选择地曝露此阻障层至一预处理工艺(步骤120),沉积一钴层于此阻障层上(步骤130),可选择地曝露此钴层至一后处理工艺(步骤140),及沉积至少一个导电层于此钴层上(步骤150)。
图2A图标含有配置于下层202之上的介电层204的基材200。孔206形成于介电层204内且可为一通孔、镶嵌、穿孔或其它形成于其内的通道。下层202可为一基材、基材表面、接触层或视组件结构而定的另一层。介电层204可含有一介电材料,如一低k介电材料。在一范例中,介电层204含有一低k介电材料,如一碳氧化硅材料,或一碳掺杂的氧化硅材料,例如BLACKII低k介电材料,其可得自位于美国加州圣克拉拉市的AppliedMaterials公司。用于介电层204的合宜材料的另一范例为碳化硅基膜,其使用如述于共同让渡的美国专利第6,537,733、6,790,788及6,890,850号的化学气相沉积(CVD)或等离子体辅助CVD(PE-CVD)工艺形成,该些专利并入本案做为参考。
在一实施例中,在工艺100的步骤110期间至少一个阻障层或材料可沉积或形成于一基材上。在一范例中,图2B图标阻障层210配置于基材200上、在介电层204之上,并共形地位于孔206内。阻障层210可为一层或多层。阻障层210可含有钛、氮化钛、钽、氮化钽、钨、氮化钨、其等之硅化物、其等之衍生物或其等之组合。在某些实施例中,阻障层210可含有钽/氮化钽,钛/氮化钛或钨/氮化钨的双层。阻障层210可具有一在自约至约范围间的厚度,较佳为自约至约且可经由PVD、ALD、等离子体辅助ALD(PE-ALD)、CVD、PE-CVD、脉冲-CVD或其等的组合形成或沉积。
在一范例中,阻障层210含有经由PVD工艺沉积的金属钽的一下层及一经由另一PVD工艺沉积一配置在此氮化钽下层的上的上层。在另一范例中,阻障层210含有经由ALD工艺沉积的金属钽的一下层及一经由CVD工艺沉积一配置于此氮化钽下层之上的上层。在另一范例中,阻障层210含有经由PVD工艺沉积的金属钽的一下层及一经由CVD工艺沉积一配置此氮化钽下层的上的上层。
例如,阻障层210可含有使用CVD工艺或一ALD工艺沉积的氮化钽,其中含钽化合物或钽先驱物(例如,PDMAT)与氮先驱物(例如氨)反应。在一实施例中,钽及/或氮化钽经由述于共同让渡之于2002年10月25日申请的美国专利申请案第10/281,079号,且以US 2003-0121608公开的专利申请案中的ALD工艺沉积为一阻障层210,该专利并入本案做为参考。在一范例中,Ta/TaN双层可沉积为一阻障层210,如各自以ALD、CVD及/或PVD工艺以任何顺序沉积一层于另一层上的一金属钽层及一氮化钽层。
在另一范例中,一Ti/TiN双层可沉积为一阻障层210,如各自以ALD、CVD及/或PVD工艺以任何顺序沉积一层于另一层上的一金属钛层及一氮化钛层。在另一范例中,一W/WN双层可沉积为一阻障层210,如各自以ALD、CVD及/或PVD工艺以任何顺序沉积一层于另一层上的一金属钨层及一氮化钨层。
在步骤120,阻障层210可选择地曝露至一预处理工艺,如一等离子体工艺或一热工艺。在等离子体或热预处理工艺期间可曝露至基材200的工艺气体及/或试剂包括氢(例如,H2或原子-H)、氮(例如,N2或原子-N)、氨(NH3)、氢与氨混合物(H2/NH3)、联胺(N2H4)、硅烷(SiH4)、二硅烷(Si2H6)、氦、氩、其之衍生物、其的等离子体或其等之组合。工艺气体可以在自约500sccm至约10slm范围间的流速流入至此工艺腔室或曝露至此基材,较佳为自约1slm至约6slm,例如约3slm。
在一实施例中,在步骤120于此预处理工艺期间,基材200及阻障层210可曝露至一等离子体以除去阻障层210的污染物。基材200可置于一工艺腔室内且曝于一工艺气体,该气体可点燃以形成等离子体。工艺气体可含有一种气体化合物或多种气体化合物。基材200可在室温(例如23℃),但通常预热至后续沉积工艺的需求温度。基材200可加热至自约100℃至约400℃范围间的温度,较佳为自约125℃至约350℃,且更佳为约150℃至约300℃,如约200℃或约250℃。
此工艺腔室可产生一原位等离子体或装设有一远距等离子体源(RPS)。在一实施例中,基材200可曝露至此等离子体(例如,原位或远距)自约0.5秒至约90秒的范围间的一段时间,较佳为自约10秒至约60秒,且更佳为自约20秒至约40秒。此等离子体在功率为自约100瓦特至约1,000瓦特范围间产生,较佳为约200瓦特至约600瓦特,且更佳为约300瓦特至约500瓦特。此工艺腔室通常具有一为约100托耳或更少的内部压力,如在自约0.1托耳至约100托耳范围间,较佳为自约0.5托耳至约50托耳,且更佳为自约1托耳至约10托耳。
在一范例中,基材200及阻障层210可曝露至由氢、氨、氮或其等的混合物产生的等离子体。在另一范例中,基材200及阻障层210可曝露至由氢及氨产生的等离子体。在另一范例中,基材200及阻障层210可曝露至由氢、氮、硅烷、二硅烷或其等之混合物产生的等离子体。在另一范例中,基材200及阻障层210可曝露至由氢、氮、氩、氦或其等的混合物产生的等离子体。
在另一实施例中,在步骤120,基材200及阻障层210于热预处理工艺期间可曝露至一工艺气体以除去阻障层210的污染物。此热预处理工艺可为一快速热工艺(RTP)或一快速热退火(RTA)工艺。基材200可置于一工艺腔室内且曝于至少一工艺气体及/或试剂。此工艺腔室可为一用于后续沉积工艺的沉积腔室,如一PVD腔室、一CVD腔室或一ALD腔室。或者,此工艺腔室可为一热退火腔室,如RTA腔室,其可购自位于美国加州圣克拉拉市的Applied Materials公司。基材200可加热至自约25℃至约800℃范围间的温度,较佳为自约50℃至约400℃,且更佳为自约100℃至约300℃。基材200可加热自约2分钟至约20分钟范围间的一段时间,较佳为自约5分钟至约15分钟。例如,基材200在此工艺腔室中可加热至约400℃约12分钟。
在一范例中,基材200及阻障层210当在此工艺腔室中加热时可曝于氢、氨、氮或其等之混合物。在另一范例中,基材200及阻障层210当在此工艺腔室中加热时可曝于氨/氢混合物。在另一范例中,基材200及阻障层210当在此工艺腔室中加热时可曝于氢、氮、硅烷、二硅烷或其等之混合物。在另一范例中,基材200及阻障层210当在此工艺腔室中加热时可曝于氢、氮、氩、氦或其等之混合物。
在另一实施例中,在工艺100的步骤130期间,至少钴材料或层可沉积或形成于此基材上。在一范例中,图2C说明钴层220配置于基材200上,在阻障层210之上,且在孔206内共形。钴层220通常为单一层,但可含有多层。钴层220在遍及阻障层210上可为一连续或一不连续层。钴层220可具有一约或更少的厚度,如在自约至约的范围间,较佳为约至约钴层220可经由一气相沉积工艺,如CVD、PE-CVD、脉冲CVD、ALD、PE-ALD或PVD形成或沉积。此等离子体辅助气相沉积工艺,亦即PE-CVD及PE-ALD,在此工艺腔室内可为一原位等离子体工艺,或可为一远距等离子体工艺以致等离子体可经由一RPS点燃并直接进入此工艺腔室。在许多范例中,钴层220含有金属钴。或者,在其它范例中,钴层220可含有一种或更多种钴材料,如金属钴、硅化钴、硼化钴、磷化钴、其之合金、其之衍生物或其等之组合。
在某些实施例中,钴层220可在热CVD工艺、脉冲-CVD工艺、PE-CVD工艺或脉冲PE-CVD工艺期间经由同时导入一钴先驱物与一试剂至工艺腔室而形成或沉积。在其它实施例中,此钴先驱物可在热CVD工艺、脉冲CVD工艺、PE-CVD工艺或脉冲PE-CVD工艺期间于无一试剂下导入至此工艺腔室。或者,在其它实施例中,钴层220可在热ALD工艺或PE-ALD工艺期间经由依序导入一钴先驱物与一试剂至工艺腔室而形成或沉积。
在某些范例中,钴层220可含有金属钴,但在其它范例中,可含有其它钴材料。可经由本文描述的CVD或ALD工艺形成钴材料(例如,金属钴或钴合金)的合宜钴驱物包括钴羰基错合物、钴脒化合物、双环戊二烯钴化合物、钴二烯基错合物、钴亚硝基错合物、其之衍生物、其之错合物、其之等离子体或其等之组合。在某些实施例中,钴材料可经由更进一步描述于共同让渡的美国专利第7,264,846及7,404,985号中的CVD与ALD工艺沉积,该些专利并入本案做为参考。
在某些实施例中,可使用钴羰基化合物或错合物做为钴先驱物。钴羰基化合物或错合物具有化学通式(CO)xCoyLz,其中X可为1、2、3、4、5、6、7、8、9、10、11、或12,Y可为1、2、3、4或5,及Z可为1、2、3、4、5、6、7或8。此基团L为不存在、一配位体或多个配位体,其可为相同配位体或不同配位体,且包括环戊二烯基、烷基环戊二烯基(例如甲基环戊二烯基或五甲基环戊二烯基)、戊二烯基、烷基戊二烯基、环丁二烯基、丁二烯基、乙烯基、烯丙基(或丙烯基)、烯、二烯、炔、乙炔、丁基乙炔、亚硝基、氨、其之衍生物、其之错合物、其之等离子体或其等之组合。
在一实施例中,在沉积工艺期间可使用二钴六羰基乙酰基化合物以形成钴材料(例如,钴层220)。二钴六羰基乙酰基化合物可具有化学通式(CO)6Co2(RC≡CR'),其中R及R'为独立选自氢、甲基、乙基、丙基、异丙基、丁基、第三丁基、戊基、苯甲基、芳香族羟基、其之异构物、其之衍生物或其等之组合。在一范例中,二钴六羰基丁基乙炔(CCTBA,(CO)6Co2(HC≡CtBu))为此钴先驱物。二钴六羰基乙酰基化合物的其它范例包括二钴六羰基甲基丁基乙炔((CO)6Co2(MeC≡CtBu))、二钴六羰基苯基乙炔((CO)6Co2(HC≡CPh))、二钴六羰基甲基苯基乙炔((CO)6Co2(MeC≡CPh))、二钴六羰基甲基乙炔((CO)6Co2(HC≡CMe))、二钴羰基二甲基乙炔((CO)6Co2(MeC≡CMe))、其之衍生物、其之错合物、其之等离子体或其等之组合。其它范例的钴羰基错合物包括环戊二烯基钴双(羰基)(CpCo(CO)2)、三羰基烯丙基钴((CO)3Co(CH2CH=CH2))、其之衍生物、其之错合物、其之等离子体或其等之组合。
在另一实施例中,可使用钴脒酸盐或钴酰胺错合物做为钴先驱物。钴酰胺错合物具有化学通式(RR’N)xCo,其中X可为1、2或3,且R与R’独立为氢、甲基、乙基、丙基、丁基、烷基、硅烷基、烷基硅烷基、其之衍生物或其等之组合。一些范例的钴酰胺错合物包括双(二(丁基二甲基硅烷基)酰胺)钴(((BuMe2Si)2N)2Co)、双(二(乙基二甲基硅烷基)酰胺)钴(((EtMe2Si)2N)2Co)、双(二(丙基三甲基硅烷基)酰胺)钴(((PrMe2Si)2N)2Co)、双(二(三甲基硅烷基)酰胺)钴(((Me3Si)2N)2Co),三(二(三甲基硅烷基)酰胺)钴(((Me3Si)2N)3Co)、其之衍生物、其之错合物、其之等离子体或其等之组合。
一些范例的钴先驱物包括甲基环戊二烯基钴双(羰基)(MeCpCo(CO)2)、乙基环戊二烯基钴双(羰基)(EtCpCo(CO)2)、五甲基环戊二烯基钴双(羰基)(Me5CpCo(CO)2)、二钴八(羰基)(Co2(CO)8)、亚硝基钴三(羰基)((ON)Co(CO)3)、双(环戊二烯基)钴、(环戊二烯基)钴(环己二烯基)、环戊二烯基钴(1,3-己二烯基)、(环丁二烯基)钴(环戊二烯基)、双(甲基环戊二烯基)钴、(环戊二烯基)钴(5-甲基环戊二烯基),双(乙烯)钴(五甲基环戊二烯基)、四羰基碘化钴、钴四羰基三氯硅烷、羰基氯三(三甲基膦)钴、钴三羰基-氢三丁基膦、乙炔二钴六羰基、乙炔二钴五羰基三乙基膦、其之衍生物、其之错合物、其之等离子体或其等之组合。
在某些范例中,当经由本文描述的工艺形成钴材料(例如,金属钴或钴合金)时,可使用交替试剂与钴先驱物反应,该试剂包括还原剂,其包括氢(例如,H2或原子-H)、氮(例如,N2或原子-N)、氨(NH3)、联胺(N2H4)、一氢与氨的混合物(H2/NH3)、硼烷(BH3)、二硼烷(B2H6)、三乙基硼烷(Et3B)、硅烷(SiH4)、二硅烷(Si2H6)、三硅烷(Si3H8)、四硅烷(Si4H10)、甲基硅烷(SiCH6)、二甲基硅烷(SiC2H8)、膦(PH3)、其的衍生物、其的等离子体或其等之组合。
在一实施例中,含金属钴的钴层220在热CVD工艺期间经由同时将基材200曝露至一钴先驱物气体与一还原剂而沉积。在一可替代的实施例中,含金属钴的钴层220在等离子体辅助CVD工艺期间经由同时将基材200曝露至一钴先驱物气体与一还原剂而沉积。此等离子体源可为在CVD腔室内的原位等离子体源或装设在CVD腔室外的RPS。此钴先驱物气体可经由将一载体气体(例如,氮或氩)通过一钴先驱物(例如,CCTBA)安瓿而形成。此还原剂气体可为单一化合物(例如,H2),且因此不具有载体气体。或者,此还原剂气体可经由将载体气体通过一还原剂安瓿而形成。
此安瓿的加热可依工艺期间使用的钴先驱物或还原剂而定。在一范例中,一含有钴先驱物的安瓿,如二钴六羰基乙酰基化合物或其它钴羰基化合物(例如,(CO)xCoyLz)可加热至一自约30℃至约500℃范围间的温度。此钴先驱物气体通常具有一自约100sccm(每分钟标准立方公分(standard cubic centimeters per minute))至约2,000sccm范围间的流速,较佳为自约200sccm至约1,000sccm,且更佳为自约300sccm至约700sccm,例如约500sccm。此还原剂气体通常具有一自约0.5slm(每分钟标准升(standard liters perminute))至约10slm范围间的流速,较佳为自约1slm至约8slm,且更佳为自约2slm至约6slm。在一范例中,还原剂气体为氢且具有一自约2slm至约6slm范围间的流速,如约4slm。
此钴先驱物气体及此还原剂气体于沉积工艺期间可在进入工艺腔室前、当时或之后组合以形成一沉积气体以沉积钴层220。基材200可置于一工艺腔室内且可加热至自约25℃至约800℃范围间的温度,较佳为自约50℃至约400℃,且更佳为自约100℃至约250℃,如约150℃。一旦在预定温度,基材200可曝露至含有钴先驱物气体与还原剂气体的沉积气体自约0,1秒至约120秒范围间的一段时间,较佳为自约1秒至约60秒,且更佳为自约5秒至约30秒。例如,基材200当于CVD工艺期间形成钴层220时,其在此工艺腔室中可加热至约150℃约10分钟。
在步骤140,钴层220可选择地曝于一后处理工艺,如一等离子体工艺或一热工艺。在等离子体或热后处理工艺期间可曝于基材200及钴层220的工艺气体及/或试剂包括氢(例如,H2或原子-H)、氮(例如,N2或原子-N)、氨(NH3)、一氢与氨的混合物(H2/NH3)、联胺(N2H4)、硅烷(SiH4)、二硅烷(Si2H6)、氦、氩、其之衍生物、其之等离子体或其等之组合。此工艺气体可以自约500sccm至约10slm范围间的流速流入此工艺腔室或曝至基材,较佳为自约1slm至约6slm,例如约3slm。
在一实施例中,在步骤140于此后处理工艺期间,基材200及钴层220可曝露至一等离子体以除去钴层220的污染物。基材200可置于一工艺腔室内且曝于一工艺气体,该气体可点燃以形成等离子体。此工艺气体可含有一气体化合物或多个气体化合物。基材200可在室温(例如23℃),但通常预热至后续沉积工艺的需求温度。基材200可加热至自约100℃至约400℃范围间的温度,较佳为自约125℃至约350℃,且更佳为自约150℃至约300℃,如约200℃或约250℃。
此工艺腔室可产生一原位等离子体或装设有一RPS。在一实施例中,基材200可曝露至此等离子体(例如,原位或远距)自约0.5秒至约90秒的范围间的一段时间,较佳为自约10秒至约60秒,且更佳为自约20秒至约40秒。此等离子体在功率为自约100瓦特至约1,000瓦特范围间产生,较佳为自约200瓦特至约600瓦特,且更佳为自约300瓦特至约500瓦特。此工艺腔室通常具有一内部压力为约100托耳或更少,如在自约0.1托耳至约100托耳范围间,较佳为自约0.5托耳至约50托耳,且更佳为自约1托耳至约10托耳。
在一范例中,基材200及钴层220可曝露至由氢、氨、氮或其等的混合物产生的等离子体。在另一范例中,基材200及钴层220可曝露至由氢及氨产生的等离子体。在另一范例中,基材200及钴层220可曝露至由氢、氮、硅烷、二硅烷或其等之混合物产生的等离子体。在另一范例中,基材200及钴层220可曝露至由氢、氮、氩、氦或其等之混合物产生的等离子体。
在某些范例中,基材200及钴层220可曝至由RPS点燃的氢气产生的氢等离子体。钴层220可曝至具自约2slm至约4slm范围间的流速的氢气体。此工艺腔室可具有一内部压力自约1托耳至约10托耳范围间,且此等离子体经由具自约300瓦特至约500瓦特范围间的功率的RPS点燃。在一实施例中,此等离子体对于每一具有自约至约范围间厚度的钴材料沉积层曝至钴层220自约20秒至约40秒范围间的一段时间。当形成钴层220时,可在沉积钴材料的多层后进行多重处理。
在另一实施例中,在步骤140于此后处理工艺期间,基材200及钴层220可曝露至一工艺气体以除去钴层220的污染物。此热后处理工艺可为一RTP或RTA工艺。基材200可置于一工艺腔室内且曝于至少一种工艺气体及/或试剂。此工艺腔室可为一在先前沉积工艺使用或将在后续沉积工艺使用的沉积腔室,如一PVD腔室、一CVD腔室或一ALD腔室。或者,此工艺腔室可为一热退火腔室,如RTA腔室,其可购自位于美国加州圣克拉拉市的Applied Materials公司。基材200可加热至自约25℃至约800℃范围间的温度,较佳为自约50℃至约400℃,且更佳为自约100℃至约300℃。基材200可加热自约2分钟至约20分钟范围间的一段时间,较佳为自约5分钟至约15钟。例如,基材200在此工艺腔室中可加热至约400℃约12分钟。
在一范例中,基材200及钴层220当在此工艺腔室中加热时可曝于氢、氨、氮或其等之混合物。在另一范例中,基材200及钴层220当在此工艺腔室中加热时可曝于氨/氢混合物。在另一范例中,基材200及钴层220当在此工艺腔室中加热时可曝于氢、氮、硅烷、二硅烷或其等之混合物。在另一范例中,基材200及钴层220当在此工艺腔室中加热时可曝于氢、氮、氩、氦或其等之混合物。
图2C图示在基材200上于介电层204内形成孔206。孔206含有共形配置于其内的阻障层210及钴层220。在另一实施例中,在工艺100的步骤150期间,一导电层可沉积或形成于钴层220上。在一实施例中,此导电层为块体层240,其可直接沉积于钴层220上,如在图2D中所图示。或者,在另一实施例中,此导电层为种晶层230及块体层240。种晶层230可沉积遍及钴层220且接着块体层240可沉积遍及种晶层230,如在第2E-2F图中说明。
种晶层230及块体层240可在单一沉积工艺或多重沉积工艺期间沉积或形成。种晶层230可含有铜、钨、铝、钌、钴、银、铂、钯、其之合金、其之衍生物或其等之组合。块体层240可含有铜、钨、铝、其之合金、其之衍生物或其等之组合。通常,种晶层230及块体层240可独立含有铜、钨、铝、其之合金、其之衍生物或其等之组合。种晶层230及块体层240可独立地经由使用一或一以上的沉积工艺沉积,如一CVD工艺、ALD工艺、PVD工艺、无电沉积工艺、ECP工艺、其之衍生物或其等之组合。
在一范例中,种晶层230及块体层240的每一者含有铜或一铜合金。例如,含有铜的种晶层230可经由PVD工艺形成于钴层220上,且接着含有铜的块体层240可经由ECP工艺或无电沉积工艺沉积以填充孔206。在另一范例中,含有铜的种晶层230可经由ALD工艺形成于钴层220上,且接着含有铜的块体层240可经由ECP工艺或无电沉积工艺沉积以填充孔206。在另一范例中,含有铜的种晶层230可经由CVD工艺形成于钴层220上,且接着含有铜的块体层240可经由ECP工艺或无电沉积工艺沉积以填充孔206。在另一范例中,含有铜的种晶层230可经由无电工艺形成于钴层220上,且接着含有铜的块体层可经由ECP工艺或无电沉积工艺沉积以填充孔206。在另一范例中,钴层220做为一种晶层,则含有铜的块体层240可经由ECP工艺或无电沉积工艺直接沉积于其上以填充孔206。
在一范例中,种晶层230及块体层240的每一者含有钨或一钨合金。例如,含有钨的种晶层230可经由PVD工艺形成于钴层220上,且接着含有钨的块体层240可经由CVD工艺或脉冲CVD工艺沉积以填充孔206。在另一范例中,含有钨的种晶层230可经由ALD工艺形成于钴层220上,且接着含有钨的块体层240可经由CVD工艺或脉冲CVD工艺沉积以填充孔206。在另一范例中,含有钨的种晶层230可经由脉冲CVD工艺形成于钴层220上,且接着含有钨的块体层240可经由CVD工艺或脉冲CVD工艺沉积以填充孔206。在另一范例中,含有钨的种晶层230可经由无电工艺形成于钴层220上,且接着含有钨的块体层240可经由CVD工艺或脉冲CVD工艺沉积以填充孔206。在另一范例中,钴层220做为一种晶层,则含有钨的块体层240可经由CVD工艺或脉冲CVD工艺直接沉积于其上以填充孔206。
在本文实施例中使用的ALD工艺腔室可得自位于美国加州圣克拉拉市的AppliedMaterials公司。ALD工艺腔室的详细说明可见于共同让渡的美国专利第6,916,398及6,878,206号,共同让渡之于2002年10月25日申请的美国专利申请案第10/281,079号,且以US2003-0121608早期公开的专利申请案,及共同让渡之各别于2006年11月6日申请的美国专利申请号第11/556,745、11/556,752、11/556,756、11/556,758、11/556,763号且以美国专利公开号第2007-0119379、2007-0119371、2007-0128862、2007-0128863及2007-0128864号早期公开的申请案,该些专利并入本案做为参考。在另一实施例中,建构可用于ALD模式以及传统CVD模式操作以沉积含钴材料的腔室描述于共同让渡的美国专利第7,204,886号,该专利并入本案做为参考。一用于形成含钴材料的ALD工艺的详细描述更进一步揭露于共同让渡美国专利第7,264,846及7,404,985号,该些专利并入本案做为参考。在其它实施例中,建构可用于ALD模式以及传统CVD模式操作以沉积含钴材料的腔室喷洒头及CVD腔室,其可得自位于美国加州圣克拉拉市的Applied Materials公司。合宜的气相沉积腔室的范例包括WXZTM CVD腔室,其可购自位于美国加州圣克拉拉市的Applied Materials公司。此气相沉积腔室可适于经由传统CVD、脉冲CVD或PE-CVD技术以及经由ALD与PE-ALD技术沉积材料。亦然,此气相沉积腔室可用于处理工艺,如一原位等离子体工艺、一远距等离子体工艺或热退火工艺。
本文使用的“基材表面”或“基材”指任何在一基材上形成的基材或材料表面,在其上可于一制造工艺期间进行膜处理。例如,一可进行工艺的基材表面包括材料如单晶、多晶或非晶硅、应变硅、在绝缘体上硅(SOI)、掺杂硅、硅化锗、锗、砷化镓、玻璃、蓝宝石、氧化硅、氮化硅、氮氧化硅及/或碳掺杂氧化硅,如SiOxCy,例如BLACK低k介电材料,其可得自位于美国加州圣克拉拉市的Applied Materials公司。基材可具有不同尺寸,如100mm、200mm、300mm或450mm直径晶圆,以及矩形或方形片。除非特别指明,本发明描述的实施例及范例通常在具有200mm直径或300mm直径的基材上进行,更佳为300mm直径。本发明描述的工艺可用于在许多基材及表面上沉积钴材料(例如,金属钴),尤其是阻障层及层。在本发明的实施例可使用的基材包括但未限制为半导体晶圆,如结晶硅(例如,Si<100>或Si<111>)、氧化硅、应变硅、硅化锗、掺杂或未掺杂的多晶硅、掺杂或未掺杂的硅晶圆、及图案化或未图案化的晶圆。基材可曝露至预处理工艺以研磨、蚀刻、还原、氧化、羟化、加热、及/或退火此基材或基材表面。
虽然前述为有关本发明的实施例,但本发明的其它及进一步的实施例可未偏离本发明的技术的基本视野下完成,且本发明的范畴由权利要求书界定。
Claims (15)
1.一种用于在基材表面上沉积材料的方法,包含以下步骤:
在基材上形成阻障层,其中所述阻障层包括选自由钽、氮化钽、钛、氮化钛、钨以及前述各化学物质的组合构成的组中的至少一种材料;
曝露所述基材至二钴六羰基丁基乙炔(CCTBA)和氢,以便在气相沉积工艺期间在所述阻障层上形成钴层,其中所述基材在所述气相沉积工艺期间被加热达到100℃至250℃的范围内的温度;以及
沉积铜材料于所述钴层之上,其中所述钴层是金属钴、硼化钴、磷化钴、或者所述金属钴、所述硼化钴与所述磷化钴的组合。
2.如权利要求1所述的方法,进一步包含以下步骤:在处理工艺期间曝露所述阻障层或所述钴层至等离子体,其中所述等离子体包含选自由氮(N2)、氨(NH3)、氢(H2)、氨/氢混合物、前述各化学物质的衍生物以及前述各化学物质的组合构成的组的试剂。
3.如权利要求2所述的方法,其中所述阻障层或所述钴层曝露至氢等离子体达介于20秒至40秒范围内的时间段,并且所述氢等离子体通过远距等离子体源而形成。
4.如权利要求1所述的方法,进一步包含以下步骤:在热处理工艺期间,曝露所述阻障层或所述钴层至气体,其中所述气体选自由氮(N2)、氨(NH3)、氢(H2)、氨/氢混合物、前述各化学物质的衍生物以及前述各化学物质的组合构成的组,并且所述基材在所述热处理工艺期间被加热达到50℃至400℃的范围内的温度。
5.如权利要求1所述的方法,其中所述基材在热化学气相沉积工艺期间曝露至包含所述CCTBA和所述氢的沉积气体。
6.如权利要求1所述的方法,其中所述气相沉积工艺包含:在原子层沉积工艺期间,依序使所述基材曝露至所述CCTBA和所述氢。
7.如权利要求1所述的方法,其中所述铜材料包含种晶层和块体层。
8.如权利要求7所述的方法,其中所述种晶层包含铜,并且通过物理气相沉积工艺或化学气相沉积工艺来沉积,而所述块体层包含铜,并且通过电化学电镀工艺来沉积。
9.一种用于在基材表面上沉积材料的方法,包含以下步骤:
在基材上形成阻障层,所述阻障层包括选自由钽、氮化钽、钛、氮化钛、钨以及前述各化学物质的组合构成的组中的至少一种材料;
在预处理工艺期间,曝露所述阻障层至第一等离子体;
曝露所述基材至二钴六羰基丁基乙炔(CCTBA)和氢,以便在气相沉积工艺期间在所述阻障层上形成钴层,其中所述基材在所述气相沉积工艺期间被加热达到100℃至250℃的范围内的温度;
在后处理工艺期间,曝露所述钴层至第二等离子体;以及
通过气相沉积工艺,沉积铜层于所述钴层上,其中所述钴层是金属钴、硼化钴、磷化钴、或者所述金属钴、所述硼化钴与所述磷化钴的组合。
10.如权利要求9所述的方法,其中所述第一等离子体或所述第二等离子体各自包含选自由氮(N2)、氨(NH3)、氢(H2)、氩、氦、氨/氢混合物、前述各化学物质的衍生物以及前述各化学物质的组合构成的组的气体。
11.如权利要求10所述的方法,其中所述阻障层曝露至所述第一等离子体或所述钴层曝露至所述第二等离子体达介于20秒至40秒范围内的时间段,并且所述第一和第二等离子体通过远距等离子体源而形成。
12.如权利要求9所述的方法,其中所述气相沉积工艺包含:在热化学气相沉积工艺期间,使所述基材曝露至包含所述CCTBA和所述氢的沉积气体。
13.如权利要求9所述的方法,其中所述气相沉积工艺包含:在原子层沉积工艺期间,依序将所述基材曝露至所述CCTBA和所述氢。
14.一种用于在基材表面上沉积材料的方法,包含以下步骤:
在基材上形成阻障层,所述阻障层包括选自由钽、氮化钽、钛、氮化钛、钨以及前述各化学物质的组合构成的组中的至少一种材料;
在预处理工艺期间,曝露所述阻障层至等离子体;
曝露所述基材至二钴六羰基丁基乙炔(CCTBA)和还原气体,以便在气相沉积工艺期间在所述阻障层上形成钴层,其中所述基材在所述气相沉积工艺期间被加热达到100℃至250℃的范围内的温度;
在后处理工艺期间,曝露所述钴层至氢等离子体;以及
沉积铜材料于所述钴层之上,其中所述钴层是金属钴、硼化钴、磷化钴、或者所述金属钴、所述硼化钴与所述磷化钴的组合。
15.如权利要求1所述的方法,其中所述钴层是硼化钴、磷化钴或所述硼化钴与所述磷化钴的组合。
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Families Citing this family (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
TW200746268A (en) * | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
US8791018B2 (en) * | 2006-12-19 | 2014-07-29 | Spansion Llc | Method of depositing copper using physical vapor deposition |
US8673080B2 (en) | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
DE102009023381A1 (de) * | 2009-05-29 | 2010-12-02 | Grega, Samuel | Verfahren zur Herstellung von W-, Cr-, Mo-Schichten, deren Carbiden, Nitriden, Siliciden, mehrschichtigen Strukturen und Verbindungsstrukturen auf festen Substraten und Vorrichtung für deren Herstellung |
US10256142B2 (en) | 2009-08-04 | 2019-04-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
US8809193B2 (en) | 2009-09-02 | 2014-08-19 | Ulvac, Inc. | Method for the formation of Co film and method for the formation of Cu interconnection film |
US10128261B2 (en) | 2010-06-30 | 2018-11-13 | Sandisk Technologies Llc | Cobalt-containing conductive layers for control gate electrodes in a memory structure |
JP5680892B2 (ja) * | 2010-07-13 | 2015-03-04 | 株式会社アルバック | Co膜形成方法 |
US20120141667A1 (en) * | 2010-07-16 | 2012-06-07 | Applied Materials, Inc. | Methods for forming barrier/seed layers for copper interconnect structures |
US9926639B2 (en) | 2010-07-16 | 2018-03-27 | Applied Materials, Inc. | Methods for forming barrier/seed layers for copper interconnect structures |
KR101223724B1 (ko) * | 2010-10-25 | 2013-01-17 | 삼성디스플레이 주식회사 | 전자소자용 보호막 및 그 제조 방법 |
JP2012174845A (ja) * | 2011-02-21 | 2012-09-10 | Tokyo Electron Ltd | 成膜方法及び半導体装置の製造方法 |
JP5659041B2 (ja) * | 2011-02-24 | 2015-01-28 | 東京エレクトロン株式会社 | 成膜方法および記憶媒体 |
JP2012175073A (ja) * | 2011-02-24 | 2012-09-10 | Tokyo Electron Ltd | 成膜方法および記憶媒体 |
JP5933602B2 (ja) | 2011-03-04 | 2016-06-15 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | ガス分配を行なう装置および基板処理装置 |
US8524600B2 (en) | 2011-03-31 | 2013-09-03 | Applied Materials, Inc. | Post deposition treatments for CVD cobalt films |
WO2013148880A1 (en) | 2012-03-27 | 2013-10-03 | Novellus Systems, Inc. | Tungsten feature fill |
US11437269B2 (en) | 2012-03-27 | 2022-09-06 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
US10381266B2 (en) | 2012-03-27 | 2019-08-13 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
US9330939B2 (en) | 2012-03-28 | 2016-05-03 | Applied Materials, Inc. | Method of enabling seamless cobalt gap-fill |
US8736056B2 (en) * | 2012-07-31 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device for reducing contact resistance of a metal |
KR102193925B1 (ko) | 2012-09-25 | 2020-12-22 | 엔테그리스, 아이엔씨. | 코발트계 박막의 저온 ald 또는 cvd를 위한 코발트 전구체 |
JP2014101564A (ja) * | 2012-11-21 | 2014-06-05 | Ulvac Japan Ltd | コバルト膜の形成方法 |
US9865501B2 (en) * | 2013-03-06 | 2018-01-09 | Lam Research Corporation | Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer |
JP6310653B2 (ja) * | 2013-07-08 | 2018-04-11 | 株式会社アルバック | Cu配線構造の形成方法 |
US9218980B2 (en) * | 2013-09-13 | 2015-12-22 | Applied Materials, Inc. | Surface treatment to improve CCTBA based CVD co nucleation on dielectric substrate |
TWI660429B (zh) * | 2013-09-27 | 2019-05-21 | 美商應用材料股份有限公司 | 實現無縫鈷間隙填充之方法 |
US9090964B2 (en) * | 2013-12-19 | 2015-07-28 | Intel Corporation | Additives to improve the performance of a precursor source for cobalt deposition |
US9425155B2 (en) * | 2014-02-25 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer bonding process and structure |
JP6268008B2 (ja) * | 2014-03-17 | 2018-01-24 | 東京エレクトロン株式会社 | Cu配線の製造方法 |
US9496145B2 (en) * | 2014-03-19 | 2016-11-15 | Applied Materials, Inc. | Electrochemical plating methods |
KR102398920B1 (ko) * | 2014-04-07 | 2022-05-17 | 엔테그리스, 아이엔씨. | 코발트 cvd |
US10741365B2 (en) | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
JP2015224227A (ja) * | 2014-05-28 | 2015-12-14 | 宇部興産株式会社 | (アセチレン)ジコバルトヘキサカルボニル化合物の製造方法 |
US9847289B2 (en) * | 2014-05-30 | 2017-12-19 | Applied Materials, Inc. | Protective via cap for improved interconnect performance |
US9899234B2 (en) | 2014-06-30 | 2018-02-20 | Lam Research Corporation | Liner and barrier applications for subtractive metal integration |
US9748137B2 (en) | 2014-08-21 | 2017-08-29 | Lam Research Corporation | Method for void-free cobalt gap fill |
US9349637B2 (en) | 2014-08-21 | 2016-05-24 | Lam Research Corporation | Method for void-free cobalt gap fill |
US9997405B2 (en) | 2014-09-30 | 2018-06-12 | Lam Research Corporation | Feature fill with nucleation inhibition |
US9487860B2 (en) | 2014-11-10 | 2016-11-08 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method for forming cobalt containing films |
US9984963B2 (en) * | 2015-02-04 | 2018-05-29 | Sandisk Technologies Llc | Cobalt-containing conductive layers for control gate electrodes in a memory structure |
US10741572B2 (en) | 2015-02-04 | 2020-08-11 | Sandisk Technologies Llc | Three-dimensional memory device having multilayer word lines containing selectively grown cobalt or ruthenium and method of making the same |
US9758896B2 (en) | 2015-02-12 | 2017-09-12 | Applied Materials, Inc. | Forming cobalt interconnections on a substrate |
US10563305B2 (en) * | 2015-05-13 | 2020-02-18 | Versum Materials Us, Llc | Container for chemical precursors in a deposition process |
US10170320B2 (en) | 2015-05-18 | 2019-01-01 | Lam Research Corporation | Feature fill with multi-stage nucleation inhibition |
US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
US9589897B1 (en) * | 2015-08-18 | 2017-03-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Trench liner for removing impurities in a non-copper trench |
US9741577B2 (en) * | 2015-12-02 | 2017-08-22 | International Business Machines Corporation | Metal reflow for middle of line contacts |
US20170186944A1 (en) * | 2015-12-29 | 2017-06-29 | International Business Machines Corporation | Enhancement of spin transfer torque magnetoresistive random access memory device using hydrogen plasma |
US9719167B2 (en) | 2015-12-31 | 2017-08-01 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Cobalt-containing film forming compositions, their synthesis, and use in film deposition |
US9738971B2 (en) | 2015-12-31 | 2017-08-22 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition methods to form group 8-containing films |
US10011903B2 (en) | 2015-12-31 | 2018-07-03 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Manganese-containing film forming compositions, their synthesis, and use in film deposition |
US10438847B2 (en) | 2016-05-13 | 2019-10-08 | Lam Research Corporation | Manganese barrier and adhesion layers for cobalt |
US10793947B2 (en) * | 2016-08-14 | 2020-10-06 | Entegris, Inc. | Alloys of Co to reduce stress |
US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
JP2018073949A (ja) * | 2016-10-27 | 2018-05-10 | 東京エレクトロン株式会社 | 金属配線層形成方法、金属配線層形成装置および記憶媒体 |
US20180135174A1 (en) * | 2016-11-01 | 2018-05-17 | Versum Materials Us, Llc | Cobalt compounds, method of making and method of use thereof |
US10600685B2 (en) * | 2016-11-27 | 2020-03-24 | Applied Materials, Inc. | Methods to fill high aspect ratio features on semiconductor substrates with MOCVD cobalt film |
US10211099B2 (en) | 2016-12-19 | 2019-02-19 | Lam Research Corporation | Chamber conditioning for remote plasma process |
US11739418B2 (en) | 2019-03-22 | 2023-08-29 | Applied Materials, Inc. | Method and apparatus for deposition of metal nitrides |
US10443146B2 (en) | 2017-03-30 | 2019-10-15 | Lam Research Corporation | Monitoring surface oxide on seed layers during electroplating |
US10242879B2 (en) | 2017-04-20 | 2019-03-26 | Lam Research Corporation | Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition |
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
WO2019017285A1 (ja) | 2017-07-18 | 2019-01-24 | 株式会社高純度化学研究所 | 金属薄膜の原子層堆積方法 |
WO2019036157A1 (en) | 2017-08-18 | 2019-02-21 | Applied Materials, Inc. | HIGH PRESSURE AND HIGH TEMPERATURE RECOVERY CHAMBER |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
US10079177B1 (en) | 2017-09-01 | 2018-09-18 | United Microelectronics Corp. | Method for forming copper material over substrate |
US10304732B2 (en) * | 2017-09-21 | 2019-05-28 | Applied Materials, Inc. | Methods and apparatus for filling substrate features with cobalt |
EP3707746B1 (en) | 2017-11-11 | 2023-12-27 | Micromaterials LLC | Gas delivery system for high pressure processing chamber |
JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧処理システムのためのコンデンサシステム |
WO2019173006A1 (en) | 2018-03-09 | 2019-09-12 | Applied Materials, Inc. | High pressure annealing process for metal containing materials |
SG11202008268RA (en) | 2018-03-19 | 2020-10-29 | Applied Materials Inc | Methods for depositing coatings on aerospace components |
US20190309422A1 (en) * | 2018-04-06 | 2019-10-10 | Versum Materials Us, Llc | Spin-On Metallization |
WO2019209401A1 (en) | 2018-04-27 | 2019-10-31 | Applied Materials, Inc. | Protection of components from corrosion |
US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
US11024801B2 (en) * | 2018-06-27 | 2021-06-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Diffusion layer for magnetic tunnel junctions |
US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
US20200048760A1 (en) * | 2018-08-13 | 2020-02-13 | Applied Materials, Inc. | High power impulse magnetron sputtering physical vapor deposition of tungsten films having improved bottom coverage |
US11009339B2 (en) | 2018-08-23 | 2021-05-18 | Applied Materials, Inc. | Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries |
US11124874B2 (en) | 2018-10-25 | 2021-09-21 | Applied Materials, Inc. | Methods for depositing metallic iridium and iridium silicide |
WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
WO2020197894A1 (en) | 2019-03-22 | 2020-10-01 | Applied Materials, Inc. | Method and apparatus for deposition of multilayer device with superconductive film |
KR20200124351A (ko) | 2019-04-23 | 2020-11-03 | 삼성전자주식회사 | 코발트 전구체, 이를 이용한 코발트 함유막의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법 |
US11732353B2 (en) | 2019-04-26 | 2023-08-22 | Applied Materials, Inc. | Methods of protecting aerospace components against corrosion and oxidation |
US11794382B2 (en) | 2019-05-16 | 2023-10-24 | Applied Materials, Inc. | Methods for depositing anti-coking protective coatings on aerospace components |
US11697879B2 (en) | 2019-06-14 | 2023-07-11 | Applied Materials, Inc. | Methods for depositing sacrificial coatings on aerospace components |
US11466364B2 (en) | 2019-09-06 | 2022-10-11 | Applied Materials, Inc. | Methods for forming protective coatings containing crystallized aluminum oxide |
TWI780579B (zh) | 2020-02-03 | 2022-10-11 | 美商應用材料股份有限公司 | 具有整合化氮化鋁晶種或波導層的超導奈米線單光子偵測器 |
TWI753759B (zh) | 2020-02-03 | 2022-01-21 | 美商應用材料股份有限公司 | 具有整合化氮化鋁種晶或波導層的超導奈米線單光子偵測器 |
US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
US11519066B2 (en) | 2020-05-21 | 2022-12-06 | Applied Materials, Inc. | Nitride protective coatings on aerospace components and methods for making the same |
US20210407852A1 (en) * | 2020-06-25 | 2021-12-30 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device including liner structure |
WO2022005696A1 (en) | 2020-07-03 | 2022-01-06 | Applied Materials, Inc. | Methods for refurbishing aerospace components |
US11742282B2 (en) * | 2020-08-07 | 2023-08-29 | Micron Technology, Inc. | Conductive interconnects |
CN112201618A (zh) * | 2020-09-30 | 2021-01-08 | 上海华力集成电路制造有限公司 | 一种优化衬垫层质量的方法 |
US20220228257A1 (en) | 2021-01-21 | 2022-07-21 | Taiwan Semiconductor Manufacturing Company Limited | Tungsten deposition on a cobalt surface |
US20230134230A1 (en) * | 2021-11-01 | 2023-05-04 | Applied Materials, Inc. | Methods and apparatus for tungsten gap fill |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1890401A (zh) * | 2003-10-17 | 2007-01-03 | 应用材料公司 | 用含钴合金对铜进行选择性自引发无电镀覆 |
CN1945808A (zh) * | 2005-10-07 | 2007-04-11 | 恩益禧电子股份有限公司 | 制造半导体器件的方法 |
TW200746268A (en) * | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
Family Cites Families (432)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6482262B1 (en) | 1959-10-10 | 2002-11-19 | Asm Microchemistry Oy | Deposition of transition metal carbides |
FI117944B (fi) | 1999-10-15 | 2007-04-30 | Asm Int | Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi |
FI118158B (sv) | 1999-10-15 | 2007-07-31 | Asm Int | Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess |
SE393967B (sv) | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
FI57975C (fi) | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
US4389973A (en) | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
US4415275A (en) | 1981-12-21 | 1983-11-15 | Dietrich David E | Swirl mixing device |
JPS5898917A (ja) | 1981-12-09 | 1983-06-13 | Seiko Epson Corp | 原子層エビタキシヤル装置 |
JPS5898917U (ja) | 1981-12-26 | 1983-07-05 | 株式会社フジ医療器 | 椅子式マツサ−ジ機に付設した腕引伸ばし装置 |
FI64878C (fi) | 1982-05-10 | 1984-01-10 | Lohja Ab Oy | Kombinationsfilm foer isynnerhet tunnfilmelektroluminensstrukturer |
US4500409A (en) * | 1983-07-19 | 1985-02-19 | Varian Associates, Inc. | Magnetron sputter coating source for both magnetic and non magnetic target materials |
JPS6119883A (ja) | 1984-07-06 | 1986-01-28 | Asahi Chem Ind Co Ltd | 複合構造物 |
US5294286A (en) * | 1984-07-26 | 1994-03-15 | Research Development Corporation Of Japan | Process for forming a thin film of silicon |
GB2162207B (en) | 1984-07-26 | 1989-05-10 | Japan Res Dev Corp | Semiconductor crystal growth apparatus |
JPS61174725A (ja) | 1985-01-30 | 1986-08-06 | Toshiba Corp | 薄膜形成装置 |
JPH0547666Y2 (zh) | 1985-03-15 | 1993-12-15 | ||
JPS61174725U (zh) | 1985-04-22 | 1986-10-30 | ||
US5096364A (en) * | 1986-04-28 | 1992-03-17 | Varian Associates, Inc. | Wafer arm handler mechanism |
US4761269A (en) | 1986-06-12 | 1988-08-02 | Crystal Specialties, Inc. | Apparatus for depositing material on a substrate |
JPH0639357B2 (ja) | 1986-09-08 | 1994-05-25 | 新技術開発事業団 | 元素半導体単結晶薄膜の成長方法 |
US4951601A (en) | 1986-12-19 | 1990-08-28 | Applied Materials, Inc. | Multi-chamber integrated process system |
DE3721637A1 (de) | 1987-06-30 | 1989-01-12 | Aixtron Gmbh | Gaseinlass fuer eine mehrzahl verschiedener reaktionsgase in reaktionsgefaesse |
JPS6428921A (en) | 1987-07-24 | 1989-01-31 | Tokuda Seisakusho | Plasma treatment device |
US4814294A (en) * | 1987-07-30 | 1989-03-21 | Allied-Signal Inc. | Method of growing cobalt silicide films by chemical vapor deposition |
JPS6428921U (zh) | 1987-08-12 | 1989-02-21 | ||
US4824544A (en) | 1987-10-29 | 1989-04-25 | International Business Machines Corporation | Large area cathode lift-off sputter deposition device |
DE3743938C2 (de) * | 1987-12-23 | 1995-08-31 | Cs Halbleiter Solartech | Verfahren zum Atomschicht-Epitaxie-Aufwachsen einer III/V-Verbindungshalbleiter-Dünnschicht |
FR2628985B1 (fr) | 1988-03-22 | 1990-12-28 | Labo Electronique Physique | Reacteur d'epitaxie a paroi protegee contre les depots |
US5261959A (en) | 1988-05-26 | 1993-11-16 | General Electric Company | Diamond crystal growth apparatus |
JPH0824191B2 (ja) | 1989-03-17 | 1996-03-06 | 富士通株式会社 | 薄膜トランジスタ |
JP2895506B2 (ja) | 1989-05-12 | 1999-05-24 | 東京エレクトロン株式会社 | スパッタ装置 |
US5186718A (en) * | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
US5122923A (en) | 1989-08-30 | 1992-06-16 | Nec Corporation | Thin-film capacitors and process for manufacturing the same |
JPH03140487A (ja) | 1989-10-25 | 1991-06-14 | Mitsubishi Electric Corp | 電気化学反応器 |
DE69129081T2 (de) | 1990-01-29 | 1998-07-02 | Varian Associates | Gerät und Verfahren zur Niederschlagung durch einen Kollimator |
JPH03240944A (ja) | 1990-02-17 | 1991-10-28 | Masahiko Naoe | アルミニウム薄膜形成用対向ターゲット式スパッタ法及び装置 |
US5320728A (en) | 1990-03-30 | 1994-06-14 | Applied Materials, Inc. | Planar magnetron sputtering source producing improved coating thickness uniformity, step coverage and step coverage uniformity |
US5242566A (en) | 1990-04-23 | 1993-09-07 | Applied Materials, Inc. | Planar magnetron sputtering source enabling a controlled sputtering profile out to the target perimeter |
US5225366A (en) * | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
US5252807A (en) | 1990-07-02 | 1993-10-12 | George Chizinsky | Heated plate rapid thermal processor |
US5483919A (en) * | 1990-08-31 | 1996-01-16 | Nippon Telegraph And Telephone Corporation | Atomic layer epitaxy method and apparatus |
US5286296A (en) * | 1991-01-10 | 1994-02-15 | Sony Corporation | Multi-chamber wafer process equipment having plural, physically communicating transfer means |
US5178681A (en) | 1991-01-29 | 1993-01-12 | Applied Materials, Inc. | Suspension system for semiconductor reactors |
JP2680202B2 (ja) | 1991-03-20 | 1997-11-19 | 国際電気株式会社 | 気相成長方法及び装置 |
US5316793A (en) | 1992-07-27 | 1994-05-31 | Texas Instruments Incorporated | Directed effusive beam atomic layer epitaxy system and method |
US5173327A (en) | 1991-06-18 | 1992-12-22 | Micron Technology, Inc. | LPCVD process for depositing titanium films for semiconductor devices |
JPH05234899A (ja) | 1991-09-17 | 1993-09-10 | Hitachi Ltd | 原子層エピタキシー装置 |
JPH05195213A (ja) | 1992-01-22 | 1993-08-03 | Hitachi Ltd | スパッタリング装置 |
JP3126787B2 (ja) | 1992-01-30 | 2001-01-22 | 理化学研究所 | 成膜方法および成膜装置 |
US5480818A (en) * | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
JP3103186B2 (ja) | 1992-03-19 | 2000-10-23 | 富士通株式会社 | 原子層エピタキシー装置および原子層エピタキシー法 |
US5660744A (en) | 1992-03-26 | 1997-08-26 | Kabushiki Kaisha Toshiba | Plasma generating apparatus and surface processing apparatus |
JPH05311419A (ja) | 1992-04-01 | 1993-11-22 | Nec Corp | マグネトロン型スパッタ装置 |
US5306666A (en) | 1992-07-24 | 1994-04-26 | Nippon Steel Corporation | Process for forming a thin metal film by chemical vapor deposition |
US5338362A (en) | 1992-08-29 | 1994-08-16 | Tokyo Electron Limited | Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments |
US5607009A (en) | 1993-01-28 | 1997-03-04 | Applied Materials, Inc. | Method of heating and cooling large area substrates and apparatus therefor |
US5335138A (en) | 1993-02-12 | 1994-08-02 | Micron Semiconductor, Inc. | High dielectric constant capacitor and method of manufacture |
JP3265042B2 (ja) | 1993-03-18 | 2002-03-11 | 東京エレクトロン株式会社 | 成膜方法 |
US5443647A (en) | 1993-04-28 | 1995-08-22 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for depositing a refractory thin film by chemical vapor deposition |
TW271490B (zh) * | 1993-05-05 | 1996-03-01 | Varian Associates | |
US5526244A (en) | 1993-05-24 | 1996-06-11 | Bishop; Vernon R. | Overhead luminaire |
KR960005377Y1 (ko) * | 1993-06-24 | 1996-06-28 | 현대전자산업 주식회사 | 반도체 소자 제조용 스퍼터링 장치 |
US6171922B1 (en) * | 1993-09-01 | 2001-01-09 | National Semiconductor Corporation | SiCr thin film resistors having improved temperature coefficients of resistance and sheet resistance |
JPH07126844A (ja) | 1993-11-01 | 1995-05-16 | Tatsuo Asamaki | スパッタ装置 |
KR100321536B1 (ko) | 1993-12-28 | 2002-06-20 | 히가시 데쓰로 | 자전관스퍼터링또는자전관에칭용쌍극자고리자석 |
US5666247A (en) | 1994-02-04 | 1997-09-09 | Seagate Technology, Inc. | No-field, low power FeMn deposition giving high exchange films |
KR970009828B1 (en) | 1994-02-23 | 1997-06-18 | Sansung Electronics Co Ltd | Fabrication method of collimator |
JPH07300649A (ja) | 1994-04-27 | 1995-11-14 | Kobe Steel Ltd | 耐摩耗性および耐酸化性に優れた硬質皮膜及び高硬度部材 |
JP3181171B2 (ja) * | 1994-05-20 | 2001-07-03 | シャープ株式会社 | 気相成長装置および気相成長方法 |
US5796116A (en) | 1994-07-27 | 1998-08-18 | Sharp Kabushiki Kaisha | Thin-film semiconductor device including a semiconductor film with high field-effect mobility |
US5504041A (en) | 1994-08-01 | 1996-04-02 | Texas Instruments Incorporated | Conductive exotic-nitride barrier layer for high-dielectric-constant materials |
JPH0860355A (ja) | 1994-08-23 | 1996-03-05 | Tel Varian Ltd | 処理装置 |
JP2655094B2 (ja) | 1994-08-30 | 1997-09-17 | 日本電気株式会社 | 電子銃蒸着装置 |
US5616218A (en) | 1994-09-12 | 1997-04-01 | Matereials Research Corporation | Modification and selection of the magnetic properties of magnetic recording media through selective control of the crystal texture of the recording layer |
EP0703598A1 (en) | 1994-09-26 | 1996-03-27 | Applied Materials, Inc. | Electrode between sputtering target and workpiece |
US5945008A (en) | 1994-09-29 | 1999-08-31 | Sony Corporation | Method and apparatus for plasma control |
JP2671835B2 (ja) | 1994-10-20 | 1997-11-05 | 日本電気株式会社 | スパッタ装置とその装置を用いた半導体装置の製造方法 |
FI97730C (fi) * | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Laitteisto ohutkalvojen valmistamiseksi |
FI100409B (fi) | 1994-11-28 | 1997-11-28 | Asm Int | Menetelmä ja laitteisto ohutkalvojen valmistamiseksi |
FI97731C (fi) * | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Menetelmä ja laite ohutkalvojen valmistamiseksi |
US5527438A (en) | 1994-12-16 | 1996-06-18 | Applied Materials, Inc. | Cylindrical sputtering shield |
JPH08186085A (ja) | 1994-12-28 | 1996-07-16 | Nec Corp | 半導体装置の製造方法 |
US5663088A (en) | 1995-05-19 | 1997-09-02 | Micron Technology, Inc. | Method of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta2 O5 dielectric layer and amorphous diffusion barrier layer |
US5632873A (en) | 1995-05-22 | 1997-05-27 | Stevens; Joseph J. | Two piece anti-stick clamp ring |
US5780361A (en) | 1995-06-23 | 1998-07-14 | Nec Corporation | Salicide process for selectively forming a monocobalt disilicide film on a silicon region |
EP0972309A4 (en) | 1995-06-28 | 2000-01-19 | Telcordia Tech Inc | BARRIER LAYER FOR INTEGRATED FERROELECTRIC CAPACITOR ON SILICON |
KR0167248B1 (ko) | 1995-07-24 | 1999-02-01 | 문정환 | 반도체 기판의 전처리방법 |
US5589039A (en) | 1995-07-28 | 1996-12-31 | Sony Corporation | In-plane parallel bias magnetic field generator for sputter coating magnetic materials onto substrates |
US6238533B1 (en) | 1995-08-07 | 2001-05-29 | Applied Materials, Inc. | Integrated PVD system for aluminum hole filling using ionized metal adhesion layer |
US5804488A (en) | 1995-08-24 | 1998-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a tungsten silicide capacitor having a high breakdown voltage |
US5650052A (en) | 1995-10-04 | 1997-07-22 | Edelstein; Sergio | Variable cell size collimator |
US6084302A (en) | 1995-12-26 | 2000-07-04 | Micron Technologies, Inc. | Barrier layer cladding around copper interconnect lines |
JPH09316643A (ja) | 1996-02-15 | 1997-12-09 | Mitsubishi Materials Corp | 物理蒸着装置の防着部品 |
EP0793271A3 (en) | 1996-02-22 | 1998-12-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having a metal silicide film and method of fabricating the same |
EP0799903A3 (en) | 1996-04-05 | 1999-11-17 | Applied Materials, Inc. | Methods of sputtering a metal onto a substrate and semiconductor processing apparatus |
US6313035B1 (en) * | 1996-05-31 | 2001-11-06 | Micron Technology, Inc. | Chemical vapor deposition using organometallic precursors |
US6342277B1 (en) * | 1996-08-16 | 2002-01-29 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
US5736021A (en) | 1996-07-10 | 1998-04-07 | Applied Materials, Inc. | Electrically floating shield in a plasma reactor |
US5916365A (en) | 1996-08-16 | 1999-06-29 | Sherman; Arthur | Sequential chemical vapor deposition |
US6014943A (en) * | 1996-09-12 | 2000-01-18 | Tokyo Electron Limited | Plasma process device |
US5835677A (en) | 1996-10-03 | 1998-11-10 | Emcore Corporation | Liquid vaporizer system and method |
US5923056A (en) | 1996-10-10 | 1999-07-13 | Lucent Technologies Inc. | Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials |
US6071572A (en) | 1996-10-15 | 2000-06-06 | Applied Materials, Inc. | Forming tin thin films using remote activated specie generation |
US6224312B1 (en) | 1996-11-18 | 2001-05-01 | Applied Materials, Inc. | Optimal trajectory robot motion |
US5886864A (en) * | 1996-12-02 | 1999-03-23 | Applied Materials, Inc. | Substrate support member for uniform heating of a substrate |
US5807792A (en) | 1996-12-18 | 1998-09-15 | Siemens Aktiengesellschaft | Uniform distribution of reactants in a device layer |
JP4142753B2 (ja) * | 1996-12-26 | 2008-09-03 | 株式会社東芝 | スパッタターゲット、スパッタ装置、半導体装置およびその製造方法 |
US6335280B1 (en) * | 1997-01-13 | 2002-01-01 | Asm America, Inc. | Tungsten silicide deposition process |
US6221766B1 (en) | 1997-01-24 | 2001-04-24 | Steag Rtp Systems, Inc. | Method and apparatus for processing refractory metals on semiconductor substrates |
US20020019127A1 (en) * | 1997-02-14 | 2002-02-14 | Micron Technology, Inc. | Interconnect structure and method of making |
US6174377B1 (en) * | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
JPH10308283A (ja) * | 1997-03-04 | 1998-11-17 | Denso Corp | El素子およびその製造方法 |
US5936831A (en) | 1997-03-06 | 1999-08-10 | Lucent Technologies Inc. | Thin film tantalum oxide capacitors and resulting product |
US5902129A (en) | 1997-04-07 | 1999-05-11 | Lsi Logic Corporation | Process for forming improved cobalt silicide layer on integrated circuit structure using two capping layers |
US6692617B1 (en) | 1997-05-08 | 2004-02-17 | Applied Materials, Inc. | Sustained self-sputtering reactor having an increased density plasma |
TW417249B (en) | 1997-05-14 | 2001-01-01 | Applied Materials Inc | Reliability barrier integration for cu application |
US6156382A (en) | 1997-05-16 | 2000-12-05 | Applied Materials, Inc. | Chemical vapor deposition process for depositing tungsten |
FI972874A0 (fi) | 1997-07-04 | 1997-07-04 | Mikrokemia Oy | Foerfarande och anordning foer framstaellning av tunnfilmer |
US6073366A (en) | 1997-07-11 | 2000-06-13 | Asm America, Inc. | Substrate cooling system and method |
KR100385946B1 (ko) * | 1999-12-08 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자 |
US6287965B1 (en) | 1997-07-28 | 2001-09-11 | Samsung Electronics Co, Ltd. | Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor |
KR100269306B1 (ko) | 1997-07-31 | 2000-10-16 | 윤종용 | 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법 |
KR100261017B1 (ko) | 1997-08-19 | 2000-08-01 | 윤종용 | 반도체 장치의 금속 배선층을 형성하는 방법 |
US5913145A (en) * | 1997-08-28 | 1999-06-15 | Texas Instruments Incorporated | Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures |
US6348376B2 (en) * | 1997-09-29 | 2002-02-19 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same |
US5879523A (en) * | 1997-09-29 | 1999-03-09 | Applied Materials, Inc. | Ceramic coated metallic insulator particularly useful in a plasma sputter reactor |
US6197683B1 (en) * | 1997-09-29 | 2001-03-06 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same |
US6071055A (en) | 1997-09-30 | 2000-06-06 | Applied Materials, Inc. | Front end vacuum processing environment |
KR100274603B1 (ko) | 1997-10-01 | 2001-01-15 | 윤종용 | 반도체장치의제조방법및그의제조장치 |
US6235634B1 (en) | 1997-10-08 | 2001-05-22 | Applied Komatsu Technology, Inc. | Modular substrate processing system |
JP3569133B2 (ja) | 1997-10-29 | 2004-09-22 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
US6861356B2 (en) | 1997-11-05 | 2005-03-01 | Tokyo Electron Limited | Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film |
US6179983B1 (en) * | 1997-11-13 | 2001-01-30 | Novellus Systems, Inc. | Method and apparatus for treating surface including virtual anode |
US6007403A (en) | 1997-11-17 | 1999-12-28 | Urspringer; Steven E. | Flexible constrictor for inflatable bodies |
US5972430A (en) | 1997-11-26 | 1999-10-26 | Advanced Technology Materials, Inc. | Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer |
US6099904A (en) | 1997-12-02 | 2000-08-08 | Applied Materials, Inc. | Low resistivity W using B2 H6 nucleation step |
FI104383B (fi) | 1997-12-09 | 2000-01-14 | Fortum Oil & Gas Oy | Menetelmä laitteistojen sisäpintojen päällystämiseksi |
KR100269328B1 (ko) * | 1997-12-31 | 2000-10-16 | 윤종용 | 원자층 증착 공정을 이용하는 도전층 형성방법 |
US6015917A (en) | 1998-01-23 | 2000-01-18 | Advanced Technology Materials, Inc. | Tantalum amide precursors for deposition of tantalum nitride on a substrate |
US6074922A (en) | 1998-03-13 | 2000-06-13 | Taiwan Semiconductor Manufacturing Company | Enhanced structure for salicide MOSFET |
US6214731B1 (en) * | 1998-03-25 | 2001-04-10 | Advanced Micro Devices, Inc. | Copper metalization with improved electromigration resistance |
KR100267885B1 (ko) * | 1998-05-18 | 2000-11-01 | 서성기 | 반도체 박막증착장치 |
KR100282853B1 (ko) | 1998-05-18 | 2001-04-02 | 서성기 | 연속기체분사에의한반도체박막증착장치 |
NL1009327C2 (nl) | 1998-06-05 | 1999-12-10 | Asm Int | Werkwijze en inrichting voor het overbrengen van wafers. |
KR100319888B1 (ko) | 1998-06-16 | 2002-01-10 | 윤종용 | 선택적 금속층 형성방법, 이를 이용한 커패시터 형성 및 콘택홀 매립방법 |
KR100278657B1 (ko) | 1998-06-24 | 2001-02-01 | 윤종용 | 반도체장치의금속배선구조및그제조방법 |
JP2000031387A (ja) | 1998-07-14 | 2000-01-28 | Fuji Electric Co Ltd | 誘電体薄膜コンデンサの製造方法 |
JP3375302B2 (ja) * | 1998-07-29 | 2003-02-10 | 東京エレクトロン株式会社 | マグネトロンプラズマ処理装置および処理方法 |
US6592728B1 (en) | 1998-08-04 | 2003-07-15 | Veeco-Cvc, Inc. | Dual collimated deposition apparatus and method of use |
KR100275738B1 (ko) | 1998-08-07 | 2000-12-15 | 윤종용 | 원자층 증착법을 이용한 박막 제조방법 |
KR20000013654A (ko) | 1998-08-12 | 2000-03-06 | 윤종용 | 원자층 증착 방법으로 형성한 알루미나/알루미늄나이트라이드복합 유전체막을 갖는 캐패시터와 그제조 방법 |
GB2340845B (en) | 1998-08-19 | 2001-01-31 | Kobe Steel Ltd | Magnetron sputtering apparatus |
KR20000022003A (ko) | 1998-09-10 | 2000-04-25 | 이경수 | 금속과규소를포함한3성분질화물막의형성방법 |
FI108375B (fi) | 1998-09-11 | 2002-01-15 | Asm Microchemistry Oy | Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi |
KR100287180B1 (ko) * | 1998-09-17 | 2001-04-16 | 윤종용 | 계면 조절층을 이용하여 금속 배선층을 형성하는 반도체 소자의 제조 방법 |
US6132575A (en) | 1998-09-28 | 2000-10-17 | Alcatel | Magnetron reactor for providing a high density, inductively coupled plasma source for sputtering metal and dielectric films |
US6251759B1 (en) | 1998-10-03 | 2001-06-26 | Applied Materials, Inc. | Method and apparatus for depositing material upon a semiconductor wafer using a transition chamber of a multiple chamber semiconductor wafer processing system |
KR100327328B1 (ko) * | 1998-10-13 | 2002-05-09 | 윤종용 | 부분적으로다른두께를갖는커패시터의유전막형성방버뵤 |
KR100297719B1 (ko) | 1998-10-16 | 2001-08-07 | 윤종용 | 박막제조방법 |
US20030101938A1 (en) | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
US6454860B2 (en) | 1998-10-27 | 2002-09-24 | Applied Materials, Inc. | Deposition reactor having vaporizing, mixing and cleaning capabilities |
TW442891B (en) | 1998-11-17 | 2001-06-23 | Tokyo Electron Ltd | Vacuum processing system |
JP3580159B2 (ja) | 1998-12-18 | 2004-10-20 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
US6294836B1 (en) | 1998-12-22 | 2001-09-25 | Cvc Products Inc. | Semiconductor chip interconnect barrier material and fabrication method |
KR100331544B1 (ko) | 1999-01-18 | 2002-04-06 | 윤종용 | 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드 |
US6165807A (en) | 1999-01-25 | 2000-12-26 | Taiwan Smiconductor Manufacturing Company | Method for forming junction leakage monitor for mosfets with silicide contacts |
US6225176B1 (en) | 1999-02-22 | 2001-05-01 | Advanced Micro Devices, Inc. | Step drain and source junction formation |
US6540838B2 (en) | 2000-11-29 | 2003-04-01 | Genus, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
US6200893B1 (en) | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
US6305314B1 (en) | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
US6958174B1 (en) | 1999-03-15 | 2005-10-25 | Regents Of The University Of Colorado | Solid material comprising a thin metal film on its surface and methods for producing the same |
KR100273473B1 (ko) | 1999-04-06 | 2000-11-15 | 이경수 | 박막 형성 방법 |
US6194315B1 (en) * | 1999-04-16 | 2001-02-27 | Micron Technology, Inc. | Electrochemical cobalt silicide liner for metal contact fills and damascene processes |
KR100347379B1 (ko) * | 1999-05-01 | 2002-08-07 | 주식회사 피케이엘 | 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치 |
FI118342B (fi) | 1999-05-10 | 2007-10-15 | Asm Int | Laite ohutkalvojen valmistamiseksi |
US6218298B1 (en) | 1999-05-19 | 2001-04-17 | Infineon Technologies North America Corp. | Tungsten-filled deep trenches |
US6365511B1 (en) * | 1999-06-03 | 2002-04-02 | Agere Systems Guardian Corp. | Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliability |
US6124158A (en) | 1999-06-08 | 2000-09-26 | Lucent Technologies Inc. | Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants |
US6539891B1 (en) | 1999-06-19 | 2003-04-01 | Genitech, Inc. | Chemical deposition reactor and method of forming a thin film using the same |
US6524952B1 (en) * | 1999-06-25 | 2003-02-25 | Applied Materials, Inc. | Method of forming a titanium silicide layer on a substrate |
KR100319494B1 (ko) | 1999-07-15 | 2002-01-09 | 김용일 | 원자층 에피택시 공정을 위한 반도체 박막 증착장치 |
KR20010017820A (ko) | 1999-08-14 | 2001-03-05 | 윤종용 | 반도체 소자 및 그 제조방법 |
US6984415B2 (en) * | 1999-08-20 | 2006-01-10 | International Business Machines Corporation | Delivery systems for gases for gases via the sublimation of solid precursors |
US6391785B1 (en) | 1999-08-24 | 2002-05-21 | Interuniversitair Microelektronica Centrum (Imec) | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
US6511539B1 (en) * | 1999-09-08 | 2003-01-28 | Asm America, Inc. | Apparatus and method for growth of a thin film |
JP4049978B2 (ja) | 1999-09-15 | 2008-02-20 | 三星電子株式会社 | メッキを用いた金属配線形成方法 |
JP2001095821A (ja) | 1999-09-30 | 2001-04-10 | Lion Corp | 歯間清掃具 |
US6326297B1 (en) | 1999-09-30 | 2001-12-04 | Novellus Systems, Inc. | Method of making a tungsten nitride barrier layer with improved adhesion and stability using a silicon layer |
DE10049257B4 (de) | 1999-10-06 | 2015-05-13 | Samsung Electronics Co., Ltd. | Verfahren zur Dünnfilmerzeugung mittels atomarer Schichtdeposition |
US6398929B1 (en) | 1999-10-08 | 2002-06-04 | Applied Materials, Inc. | Plasma reactor and shields generating self-ionized plasma for sputtering |
FI117942B (fi) | 1999-10-14 | 2007-04-30 | Asm Int | Menetelmä oksidiohutkalvojen kasvattamiseksi |
KR100737901B1 (ko) | 1999-10-15 | 2007-07-10 | 에이에스엠 인터내셔널 엔.브이. | 민감한 표면에 나노적층박막을 증착하는 방법 |
EP1221177B1 (en) | 1999-10-15 | 2006-05-31 | Asm International N.V. | Conformal lining layers for damascene metallization |
WO2001029893A1 (en) | 1999-10-15 | 2001-04-26 | Asm America, Inc. | Method for depositing nanolaminate thin films on sensitive surfaces |
US6203613B1 (en) * | 1999-10-19 | 2001-03-20 | International Business Machines Corporation | Atomic layer deposition with nitrate containing precursors |
KR100304714B1 (ko) | 1999-10-20 | 2001-11-02 | 윤종용 | 금속 할로겐 가스를 사용한 반도체 소자의 금속 박막 형성방법 |
KR100341849B1 (ko) | 1999-11-05 | 2002-06-26 | 박종섭 | 반도체 소자의 금속 배선 형성 방법 |
KR20010047128A (ko) | 1999-11-18 | 2001-06-15 | 이경수 | 액체원료 기화방법 및 그에 사용되는 장치 |
US6548112B1 (en) | 1999-11-18 | 2003-04-15 | Tokyo Electron Limited | Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber |
CA2390465A1 (en) * | 1999-11-22 | 2001-05-31 | Human Genome Sciences, Inc. | Kunitz-type protease inhibitor polynucleotides, polypeptides, and antibodies |
US6534404B1 (en) | 1999-11-24 | 2003-03-18 | Novellus Systems, Inc. | Method of depositing diffusion barrier for copper interconnect in integrated circuit |
US6780704B1 (en) | 1999-12-03 | 2004-08-24 | Asm International Nv | Conformal thin films over textured capacitor electrodes |
KR100330749B1 (ko) | 1999-12-17 | 2002-04-03 | 서성기 | 반도체 박막증착장치 |
KR100705926B1 (ko) * | 1999-12-22 | 2007-04-11 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조방법 |
KR100624903B1 (ko) | 1999-12-22 | 2006-09-19 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조방법 |
FI118474B (fi) | 1999-12-28 | 2007-11-30 | Asm Int | Laite ohutkalvojen valmistamiseksi |
FI118343B (fi) | 1999-12-28 | 2007-10-15 | Asm Int | Laite ohutkalvojen valmistamiseksi |
US6495854B1 (en) | 1999-12-30 | 2002-12-17 | International Business Machines Corporation | Quantum computing with d-wave superconductors |
US6475854B2 (en) | 1999-12-30 | 2002-11-05 | Applied Materials, Inc. | Method of forming metal electrodes |
JP4817210B2 (ja) | 2000-01-06 | 2011-11-16 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
FI20000099A0 (fi) | 2000-01-18 | 2000-01-18 | Asm Microchemistry Ltd | Menetelmä metalliohutkalvojen kasvattamiseksi |
JP4362919B2 (ja) | 2000-02-04 | 2009-11-11 | 株式会社デンソー | 原子層エピタキシャル成長法による成膜方法 |
KR100378871B1 (ko) | 2000-02-16 | 2003-04-07 | 주식회사 아펙스 | 라디칼 증착을 위한 샤워헤드장치 |
CN1314225A (zh) * | 2000-02-18 | 2001-09-26 | 德克萨斯仪器股份有限公司 | 铜镀层集成电路焊点的结构和方法 |
US6627995B2 (en) | 2000-03-03 | 2003-09-30 | Cvc Products, Inc. | Microelectronic interconnect material with adhesion promotion layer and fabrication method |
JP5016767B2 (ja) | 2000-03-07 | 2012-09-05 | エーエスエム インターナショナル エヌ.ヴェー. | 傾斜薄膜の形成方法 |
US6274484B1 (en) | 2000-03-17 | 2001-08-14 | Taiwan Semiconductor Manufacturing Company | Fabrication process for low resistivity tungsten layer with good adhesion to insulator layers |
TW496907B (en) | 2000-04-14 | 2002-08-01 | Asm Microchemistry Oy | Method and apparatus of growing a thin film onto a substrate |
US7060132B2 (en) | 2000-04-14 | 2006-06-13 | Asm International N.V. | Method and apparatus of growing a thin film |
TW576873B (en) | 2000-04-14 | 2004-02-21 | Asm Int | Method of growing a thin film onto a substrate |
FI117979B (fi) | 2000-04-14 | 2007-05-15 | Asm Int | Menetelmä oksidiohutkalvojen valmistamiseksi |
KR100363088B1 (ko) | 2000-04-20 | 2002-12-02 | 삼성전자 주식회사 | 원자층 증착방법을 이용한 장벽 금속막의 제조방법 |
EP1282911B1 (en) * | 2000-05-15 | 2018-09-05 | Asm International N.V. | Process for producing integrated circuits |
US6759325B2 (en) | 2000-05-15 | 2004-07-06 | Asm Microchemistry Oy | Sealing porous structures |
FI118805B (fi) | 2000-05-15 | 2008-03-31 | Asm Int | Menetelmä ja kokoonpano kaasufaasireaktantin syöttämiseksi reaktiokammioon |
US6482733B2 (en) | 2000-05-15 | 2002-11-19 | Asm Microchemistry Oy | Protective layers prior to alternating layer deposition |
KR100427423B1 (ko) * | 2000-05-25 | 2004-04-13 | 가부시키가이샤 고베 세이코쇼 | Cvd용 인너튜브 |
KR100647442B1 (ko) | 2000-06-07 | 2006-11-17 | 주성엔지니어링(주) | 원자층 증착법을 이용한 박막 형성방법 |
KR100403611B1 (ko) | 2000-06-07 | 2003-11-01 | 삼성전자주식회사 | 금속-절연체-금속 구조의 커패시터 및 그 제조방법 |
JP3687651B2 (ja) * | 2000-06-08 | 2005-08-24 | ジニテック インク. | 薄膜形成方法 |
US7253076B1 (en) | 2000-06-08 | 2007-08-07 | Micron Technologies, Inc. | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers |
KR100387255B1 (ko) * | 2000-06-20 | 2003-06-11 | 주식회사 하이닉스반도체 | 반도체 소자의 금속 배선 형성 방법 |
KR100332314B1 (ko) * | 2000-06-24 | 2002-04-12 | 서성기 | 박막증착용 반응용기 |
KR100332313B1 (ko) | 2000-06-24 | 2002-04-12 | 서성기 | Ald 박막증착장치 및 증착방법 |
US6620723B1 (en) * | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US6936538B2 (en) * | 2001-07-16 | 2005-08-30 | Applied Materials, Inc. | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics |
US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
US6585823B1 (en) | 2000-07-07 | 2003-07-01 | Asm International, N.V. | Atomic layer deposition |
US6592942B1 (en) | 2000-07-07 | 2003-07-15 | Asm International N.V. | Method for vapour deposition of a film onto a substrate |
FI20001694A0 (fi) | 2000-07-20 | 2000-07-20 | Asm Microchemistry Oy | Menetelmä ohutkalvon kasvattamiseksi substraatille |
KR100444149B1 (ko) * | 2000-07-22 | 2004-08-09 | 주식회사 아이피에스 | Ald 박막증착설비용 클리닝방법 |
US6368954B1 (en) | 2000-07-28 | 2002-04-09 | Advanced Micro Devices, Inc. | Method of copper interconnect formation using atomic layer copper deposition |
KR100630666B1 (ko) | 2000-08-09 | 2006-10-02 | 삼성전자주식회사 | 금속 콘택 및 커패시터를 포함하는 반도체 소자 제조방법 |
KR100396879B1 (ko) * | 2000-08-11 | 2003-09-02 | 삼성전자주식회사 | 동일 물질로 이루어진 이중막을 포함하는 다중막으로캡슐화된 캐패시터를 구비한 반도체 메모리 소자 및 그의제조 방법 |
US6302965B1 (en) | 2000-08-15 | 2001-10-16 | Applied Materials, Inc. | Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces |
US6903005B1 (en) | 2000-08-30 | 2005-06-07 | Micron Technology, Inc. | Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics |
US6444263B1 (en) | 2000-09-15 | 2002-09-03 | Cvc Products, Inc. | Method of chemical-vapor deposition of a material |
US6527855B2 (en) | 2000-10-10 | 2003-03-04 | Rensselaer Polytechnic Institute | Atomic layer deposition of cobalt from cobalt metallorganic compounds |
KR100436941B1 (ko) | 2000-11-07 | 2004-06-23 | 주성엔지니어링(주) | 박막 증착 장치 및 그 방법 |
US6355561B1 (en) * | 2000-11-21 | 2002-03-12 | Micron Technology, Inc. | ALD method to improve surface coverage |
US6613695B2 (en) | 2000-11-24 | 2003-09-02 | Asm America, Inc. | Surface preparation prior to deposition |
AU2002225761A1 (en) | 2000-11-30 | 2002-06-11 | Asm America, Inc. | Thin films for magnetic devices |
US20020104481A1 (en) | 2000-12-06 | 2002-08-08 | Chiang Tony P. | System and method for modulated ion-induced atomic layer deposition (MII-ALD) |
US6428859B1 (en) | 2000-12-06 | 2002-08-06 | Angstron Systems, Inc. | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
KR100386034B1 (ko) | 2000-12-06 | 2003-06-02 | 에이에스엠 마이크로케미스트리 리미티드 | 확산 방지막의 결정립계를 금속산화물로 충진한 구리 배선구조의 반도체 소자 제조 방법 |
WO2002070142A1 (en) | 2000-12-06 | 2002-09-12 | Angstron Systems, Inc. | Method and apparatus for improved temperature control in atomic layer deposition |
US6416822B1 (en) | 2000-12-06 | 2002-07-09 | Angstrom Systems, Inc. | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
US6949450B2 (en) | 2000-12-06 | 2005-09-27 | Novellus Systems, Inc. | Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber |
KR100385947B1 (ko) | 2000-12-06 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착 방법에 의한 박막 형성 방법 |
US6878402B2 (en) | 2000-12-06 | 2005-04-12 | Novellus Systems, Inc. | Method and apparatus for improved temperature control in atomic layer deposition |
TW511135B (en) | 2000-12-06 | 2002-11-21 | Angstron Systems Inc | Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber |
US20020197402A1 (en) | 2000-12-06 | 2002-12-26 | Chiang Tony P. | System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
US20020076507A1 (en) | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Process sequence for atomic layer deposition |
US20020073924A1 (en) | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Gas introduction system for a reactor |
US20020076481A1 (en) | 2000-12-15 | 2002-06-20 | Chiang Tony P. | Chamber pressure state-based control for a reactor |
US6630201B2 (en) | 2001-04-05 | 2003-10-07 | Angstron Systems, Inc. | Adsorption process for atomic layer deposition |
KR20020049875A (ko) | 2000-12-20 | 2002-06-26 | 윤종용 | 반도체 메모리 소자의 강유전체 커패시터 및 그 제조방법 |
JP3963078B2 (ja) | 2000-12-25 | 2007-08-22 | 株式会社高純度化学研究所 | ターシャリーアミルイミドトリス(ジメチルアミド)タンタルとその製造方法及びそれを用いたmocvd用原料溶液並びにそれを用いた窒化タンタル膜の形成方法 |
KR20020056260A (ko) | 2000-12-29 | 2002-07-10 | 박종섭 | 반도체 소자의 금속 게이트 형성방법 |
US20020086111A1 (en) | 2001-01-03 | 2002-07-04 | Byun Jeong Soo | Method of forming refractory metal nitride layers using chemisorption techniques |
US6346477B1 (en) * | 2001-01-09 | 2002-02-12 | Research Foundation Of Suny - New York | Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt |
KR100434487B1 (ko) | 2001-01-17 | 2004-06-05 | 삼성전자주식회사 | 샤워 헤드 및 이를 포함하는 박막 형성 장비 |
KR100400031B1 (ko) | 2001-01-17 | 2003-09-29 | 삼성전자주식회사 | 반도체 소자의 콘택 플러그 및 그 형성 방법 |
JP2002222934A (ja) | 2001-01-29 | 2002-08-09 | Nec Corp | 半導体装置およびその製造方法 |
US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US6844604B2 (en) | 2001-02-02 | 2005-01-18 | Samsung Electronics Co., Ltd. | Dielectric layer for semiconductor device and method of manufacturing the same |
KR100400033B1 (ko) | 2001-02-08 | 2003-09-29 | 삼성전자주식회사 | 다층 배선 구조를 갖는 반도체 소자 및 그의 제조방법 |
KR100395766B1 (ko) | 2001-02-12 | 2003-08-25 | 삼성전자주식회사 | 강유전체 기억 소자 및 그 형성 방법 |
AU2002306436A1 (en) | 2001-02-12 | 2002-10-15 | Asm America, Inc. | Improved process for deposition of semiconductor films |
US6613656B2 (en) | 2001-02-13 | 2003-09-02 | Micron Technology, Inc. | Sequential pulse deposition |
US6326306B1 (en) * | 2001-02-15 | 2001-12-04 | United Microelectronics Corp. | Method of forming copper dual damascene structure |
US20020117399A1 (en) | 2001-02-23 | 2002-08-29 | Applied Materials, Inc. | Atomically thin highly resistive barrier layer in a copper via |
US20020121241A1 (en) | 2001-03-02 | 2002-09-05 | Nguyen Anh N. | Processing chamber and method of distributing process fluids therein to facilitate sequential deposition of films |
US6878206B2 (en) * | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6734020B2 (en) | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
FI109770B (fi) | 2001-03-16 | 2002-10-15 | Asm Microchemistry Oy | Menetelmä metallinitridiohutkalvojen valmistamiseksi |
US7348042B2 (en) | 2001-03-19 | 2008-03-25 | Novellus Systems, Inc. | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
EP1677361A2 (en) | 2001-04-02 | 2006-07-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for manufacture thereof |
US6369430B1 (en) | 2001-04-02 | 2002-04-09 | Motorola, Inc. | Method of preventing two neighboring contacts from a short-circuit caused by a void between them and device having the same |
US20020144657A1 (en) | 2001-04-05 | 2002-10-10 | Chiang Tony P. | ALD reactor employing electrostatic chuck |
US20020144655A1 (en) | 2001-04-05 | 2002-10-10 | Chiang Tony P. | Gas valve system for a reactor |
US6420189B1 (en) | 2001-04-27 | 2002-07-16 | Advanced Micro Devices, Inc. | Superconducting damascene interconnected for integrated circuit |
US6447933B1 (en) | 2001-04-30 | 2002-09-10 | Advanced Micro Devices, Inc. | Formation of alloy material using alternating depositions of alloy doping element and bulk material |
US6635965B1 (en) | 2001-05-22 | 2003-10-21 | Novellus Systems, Inc. | Method for producing ultra-thin tungsten layers with improved step coverage |
KR100363332B1 (en) | 2001-05-23 | 2002-12-05 | Samsung Electronics Co Ltd | Method for forming semiconductor device having gate all-around type transistor |
US6828218B2 (en) * | 2001-05-31 | 2004-12-07 | Samsung Electronics Co., Ltd. | Method of forming a thin film using atomic layer deposition |
US6849545B2 (en) | 2001-06-20 | 2005-02-01 | Applied Materials, Inc. | System and method to form a composite film stack utilizing sequential deposition techniques |
JP4680429B2 (ja) * | 2001-06-26 | 2011-05-11 | Okiセミコンダクタ株式会社 | テキスト音声変換装置における高速読上げ制御方法 |
TW539822B (en) | 2001-07-03 | 2003-07-01 | Asm Inc | Source chemical container assembly |
WO2003029515A2 (en) * | 2001-07-16 | 2003-04-10 | Applied Materials, Inc. | Formation of composite tungsten films |
US20030198754A1 (en) | 2001-07-16 | 2003-10-23 | Ming Xi | Aluminum oxide chamber and process |
US20030017697A1 (en) * | 2001-07-19 | 2003-01-23 | Kyung-In Choi | Methods of forming metal layers using metallic precursors |
US7098131B2 (en) | 2001-07-19 | 2006-08-29 | Samsung Electronics Co., Ltd. | Methods for forming atomic layers and thin films including tantalum nitride and devices including the same |
US7105444B2 (en) | 2001-07-19 | 2006-09-12 | Samsung Electronics Co., Ltd. | Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same |
US20030015421A1 (en) * | 2001-07-20 | 2003-01-23 | Applied Materials, Inc. | Collimated sputtering of cobalt |
US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
US20080268635A1 (en) | 2001-07-25 | 2008-10-30 | Sang-Ho Yu | Process for forming cobalt and cobalt silicide materials in copper contact applications |
JP2005504885A (ja) | 2001-07-25 | 2005-02-17 | アプライド マテリアルズ インコーポレイテッド | 新規なスパッタ堆積方法を使用したバリア形成 |
US20090004850A1 (en) * | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
SG126681A1 (en) * | 2001-07-25 | 2006-11-29 | Inst Data Storage | Oblique deposition apparatus |
US7138336B2 (en) | 2001-08-06 | 2006-11-21 | Asm Genitech Korea Ltd. | Plasma enhanced atomic layer deposition (PEALD) equipment and method of forming a conducting thin film using the same thereof |
US6820570B2 (en) | 2001-08-15 | 2004-11-23 | Nobel Biocare Services Ag | Atomic layer deposition reactor |
US6548906B2 (en) * | 2001-08-22 | 2003-04-15 | Agere Systems Inc. | Method for reducing a metal seam in an interconnect structure and a device manufactured thereby |
US6806145B2 (en) * | 2001-08-31 | 2004-10-19 | Asm International, N.V. | Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer |
US20030042630A1 (en) * | 2001-09-05 | 2003-03-06 | Babcoke Jason E. | Bubbler for gas delivery |
US6718126B2 (en) * | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
AU2002333601A1 (en) | 2001-09-14 | 2003-04-01 | Asm America, Inc. | Metal nitride deposition by ald using gettering reactant |
US20030049931A1 (en) * | 2001-09-19 | 2003-03-13 | Applied Materials, Inc. | Formation of refractory metal nitrides using chemisorption techniques |
KR20030025494A (ko) | 2001-09-21 | 2003-03-29 | 삼성전자주식회사 | 루테늄막과 금속층간의 콘택을 포함하는 반도체 장치 및그의 제조 방법 |
US6607976B2 (en) | 2001-09-25 | 2003-08-19 | Applied Materials, Inc. | Copper interconnect barrier layer structure and formation method |
US20030057526A1 (en) | 2001-09-26 | 2003-03-27 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
US20030059538A1 (en) | 2001-09-26 | 2003-03-27 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
US6960537B2 (en) | 2001-10-02 | 2005-11-01 | Asm America, Inc. | Incorporation of nitrogen into high k dielectric film |
TW589684B (en) | 2001-10-10 | 2004-06-01 | Applied Materials Inc | Method for depositing refractory metal layers employing sequential deposition techniques |
TW512504B (en) | 2001-10-12 | 2002-12-01 | Advanced Semiconductor Eng | Package substrate having protruded and recessed side edge |
US20030072884A1 (en) | 2001-10-15 | 2003-04-17 | Applied Materials, Inc. | Method of titanium and titanium nitride layer deposition |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
WO2003038145A2 (en) | 2001-10-29 | 2003-05-08 | Genus, Inc. | Chemical vapor deposition system |
JP4342131B2 (ja) * | 2001-10-30 | 2009-10-14 | 富士通マイクロエレクトロニクス株式会社 | 容量素子の製造方法及び半導体装置の製造方法 |
US6423619B1 (en) | 2001-11-30 | 2002-07-23 | Motorola, Inc. | Transistor metal gate structure that minimizes non-planarity effects and method of formation |
US6773507B2 (en) | 2001-12-06 | 2004-08-10 | Applied Materials, Inc. | Apparatus and method for fast-cycle atomic layer deposition |
US7081271B2 (en) | 2001-12-07 | 2006-07-25 | Applied Materials, Inc. | Cyclical deposition of refractory metal silicon nitride |
US6729824B2 (en) | 2001-12-14 | 2004-05-04 | Applied Materials, Inc. | Dual robot processing system |
US6939801B2 (en) | 2001-12-21 | 2005-09-06 | Applied Materials, Inc. | Selective deposition of a barrier layer on a dielectric material |
US20030116087A1 (en) | 2001-12-21 | 2003-06-26 | Nguyen Anh N. | Chamber hardware design for titanium nitride atomic layer deposition |
US20030123216A1 (en) | 2001-12-27 | 2003-07-03 | Yoon Hyungsuk A. | Deposition of tungsten for the formation of conformal tungsten silicide |
US6674138B1 (en) | 2001-12-31 | 2004-01-06 | Advanced Micro Devices, Inc. | Use of high-k dielectric materials in modified ONO structure for semiconductor devices |
AU2003238853A1 (en) | 2002-01-25 | 2003-09-02 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US6866746B2 (en) | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US6824816B2 (en) | 2002-01-29 | 2004-11-30 | Asm International N.V. | Process for producing metal thin films by ALD |
US7063981B2 (en) | 2002-01-30 | 2006-06-20 | Asm International N.V. | Active pulse monitoring in a chemical reactor |
US6743340B2 (en) | 2002-02-05 | 2004-06-01 | Applied Materials, Inc. | Sputtering of aligned magnetic materials and magnetic dipole ring used therefor |
US6827978B2 (en) | 2002-02-11 | 2004-12-07 | Applied Materials, Inc. | Deposition of tungsten films |
US6777352B2 (en) | 2002-02-11 | 2004-08-17 | Applied Materials, Inc. | Variable flow deposition apparatus and method in semiconductor substrate processing |
US6833161B2 (en) | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
US6972267B2 (en) | 2002-03-04 | 2005-12-06 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
US6753618B2 (en) | 2002-03-11 | 2004-06-22 | Micron Technology, Inc. | MIM capacitor with metal nitride electrode materials and method of formation |
US20030216981A1 (en) | 2002-03-12 | 2003-11-20 | Michael Tillman | Method and system for hosting centralized online point-of-sale activities for a plurality of distributed customers and vendors |
US6720027B2 (en) | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
US6846516B2 (en) | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
US20030194825A1 (en) | 2002-04-10 | 2003-10-16 | Kam Law | Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applications |
US6875271B2 (en) | 2002-04-09 | 2005-04-05 | Applied Materials, Inc. | Simultaneous cyclical deposition in different processing regions |
US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
US6932871B2 (en) | 2002-04-16 | 2005-08-23 | Applied Materials, Inc. | Multi-station deposition apparatus and method |
US20030235961A1 (en) | 2002-04-17 | 2003-12-25 | Applied Materials, Inc. | Cyclical sequential deposition of multicomponent films |
US6778762B1 (en) | 2002-04-17 | 2004-08-17 | Novellus Systems, Inc. | Sloped chamber top for substrate processing |
US20030203616A1 (en) | 2002-04-24 | 2003-10-30 | Applied Materials, Inc. | Atomic layer deposition of tungsten barrier layers using tungsten carbonyls and boranes for copper metallization |
US7164165B2 (en) | 2002-05-16 | 2007-01-16 | Micron Technology, Inc. | MIS capacitor |
US20030213560A1 (en) | 2002-05-16 | 2003-11-20 | Yaxin Wang | Tandem wafer processing system and process |
KR100505043B1 (ko) | 2002-05-25 | 2005-07-29 | 삼성전자주식회사 | 커패시터 형성 방법 |
US20030224217A1 (en) | 2002-05-31 | 2003-12-04 | Applied Materials, Inc. | Metal nitride formation |
US7910165B2 (en) | 2002-06-04 | 2011-03-22 | Applied Materials, Inc. | Ruthenium layer formation for copper film deposition |
US7264846B2 (en) | 2002-06-04 | 2007-09-04 | Applied Materials, Inc. | Ruthenium layer formation for copper film deposition |
US7404985B2 (en) | 2002-06-04 | 2008-07-29 | Applied Materials, Inc. | Noble metal layer formation for copper film deposition |
US7041335B2 (en) | 2002-06-04 | 2006-05-09 | Applied Materials, Inc. | Titanium tantalum nitride silicide layer |
US6743721B2 (en) | 2002-06-10 | 2004-06-01 | United Microelectronics Corp. | Method and system for making cobalt silicide |
US7005697B2 (en) * | 2002-06-21 | 2006-02-28 | Micron Technology, Inc. | Method of forming a non-volatile electron storage memory and the resulting device |
KR100476926B1 (ko) * | 2002-07-02 | 2005-03-17 | 삼성전자주식회사 | 반도체 소자의 듀얼 게이트 형성방법 |
US6838125B2 (en) * | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
EP1522090A4 (en) | 2002-07-15 | 2006-04-05 | Aviza Tech Inc | THERMAL PROCESSING SYSTEM AND CONFIGURABLE VERTICAL CHAMBER |
US20040013803A1 (en) * | 2002-07-16 | 2004-01-22 | Applied Materials, Inc. | Formation of titanium nitride films using a cyclical deposition process |
US7186385B2 (en) * | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
US6955211B2 (en) * | 2002-07-17 | 2005-10-18 | Applied Materials, Inc. | Method and apparatus for gas temperature control in a semiconductor processing system |
US7081409B2 (en) | 2002-07-17 | 2006-07-25 | Samsung Electronics Co., Ltd. | Methods of producing integrated circuit devices utilizing tantalum amine derivatives |
US7066194B2 (en) * | 2002-07-19 | 2006-06-27 | Applied Materials, Inc. | Valve design and configuration for fast delivery system |
KR100468852B1 (ko) * | 2002-07-20 | 2005-01-29 | 삼성전자주식회사 | 캐패시터 구조체 형성 방법 |
US6772072B2 (en) * | 2002-07-22 | 2004-08-03 | Applied Materials, Inc. | Method and apparatus for monitoring solid precursor delivery |
US7300038B2 (en) * | 2002-07-23 | 2007-11-27 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
US6921062B2 (en) * | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
US6915592B2 (en) * | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
KR100475084B1 (ko) * | 2002-08-02 | 2005-03-10 | 삼성전자주식회사 | Dram 반도체 소자 및 그 제조방법 |
KR100542736B1 (ko) * | 2002-08-17 | 2006-01-11 | 삼성전자주식회사 | 원자층 증착법을 이용한 산화막의 형성방법 및 이를이용한 반도체 장치의 캐패시터 형성방법 |
US6790773B1 (en) | 2002-08-28 | 2004-09-14 | Novellus Systems, Inc. | Process for forming barrier/seed structures for integrated circuits |
US6958300B2 (en) | 2002-08-28 | 2005-10-25 | Micron Technology, Inc. | Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides |
JP4188033B2 (ja) | 2002-08-30 | 2008-11-26 | 本田技研工業株式会社 | 油圧緩衝機の取付構造 |
US6784096B2 (en) | 2002-09-11 | 2004-08-31 | Applied Materials, Inc. | Methods and apparatus for forming barrier layers in high aspect ratio vias |
US20040065255A1 (en) | 2002-10-02 | 2004-04-08 | Applied Materials, Inc. | Cyclical layer deposition system |
US6821563B2 (en) | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
US20040069227A1 (en) | 2002-10-09 | 2004-04-15 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
US6905737B2 (en) | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
JP2004140315A (ja) | 2002-10-17 | 2004-05-13 | Samsung Electronics Co Ltd | サリサイド工程を用いる半導体素子の製造方法 |
US6936528B2 (en) | 2002-10-17 | 2005-08-30 | Samsung Electronics Co., Ltd. | Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film |
US6716287B1 (en) | 2002-10-18 | 2004-04-06 | Applied Materials Inc. | Processing chamber with flow-restricting ring |
JP3992588B2 (ja) * | 2002-10-23 | 2007-10-17 | 東京エレクトロン株式会社 | 成膜方法 |
EP1420080A3 (en) | 2002-11-14 | 2005-11-09 | Applied Materials, Inc. | Apparatus and method for hybrid chemical deposition processes |
US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
US7244683B2 (en) | 2003-01-07 | 2007-07-17 | Applied Materials, Inc. | Integration of ALD/CVD barriers with porous low k materials |
JP4401656B2 (ja) * | 2003-01-10 | 2010-01-20 | パナソニック株式会社 | 半導体装置の製造方法 |
US6994319B2 (en) | 2003-01-29 | 2006-02-07 | Applied Materials, Inc. | Membrane gas valve for pulsing a gas |
US6868859B2 (en) | 2003-01-29 | 2005-03-22 | Applied Materials, Inc. | Rotary gas valve for pulsing a gas |
US6818094B2 (en) | 2003-01-29 | 2004-11-16 | Applied Materials, Inc. | Reciprocating gas valve for pulsing a gas |
KR100485386B1 (ko) | 2003-04-08 | 2005-04-27 | 삼성전자주식회사 | 금속막 증착용 조성물 및 이를 이용한 금속막 형성 방법 |
US7442415B2 (en) | 2003-04-11 | 2008-10-28 | Sharp Laboratories Of America, Inc. | Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films |
US20040207093A1 (en) | 2003-04-17 | 2004-10-21 | Sey-Shing Sun | Method of fabricating an alloy cap layer over CU wires to improve electromigration performance of CU interconnects |
US20050070126A1 (en) | 2003-04-21 | 2005-03-31 | Yoshihide Senzaki | System and method for forming multi-component dielectric films |
TW200506093A (en) | 2003-04-21 | 2005-02-16 | Aviza Tech Inc | System and method for forming multi-component films |
US6881437B2 (en) | 2003-06-16 | 2005-04-19 | Blue29 Llc | Methods and system for processing a microelectronic topography |
WO2004113585A2 (en) * | 2003-06-18 | 2004-12-29 | Applied Materials, Inc. | Atomic layer deposition of barrier materials |
KR100539274B1 (ko) | 2003-07-15 | 2005-12-27 | 삼성전자주식회사 | 코발트 막 증착 방법 |
KR100539278B1 (ko) * | 2003-09-22 | 2005-12-27 | 삼성전자주식회사 | 코발트 실리사이드막 형성 방법 및 반도체 장치의 제조방법. |
US20050085031A1 (en) | 2003-10-15 | 2005-04-21 | Applied Materials, Inc. | Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers |
CN1314225C (zh) | 2003-10-24 | 2007-05-02 | 中兴通讯股份有限公司 | 一种基于xml文档实现开放电信业务的方法 |
US20050095859A1 (en) | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
US20050104142A1 (en) | 2003-11-13 | 2005-05-19 | Vijav Narayanan | CVD tantalum compounds for FET get electrodes |
US20050153571A1 (en) | 2003-11-17 | 2005-07-14 | Yoshihide Senzaki | Nitridation of high-k dielectric films |
KR100555541B1 (ko) * | 2003-12-23 | 2006-03-03 | 삼성전자주식회사 | 코발트 실리사이드막 형성방법 및 그 형성방법을 이용한반도체 장치의 제조방법 |
US20060033678A1 (en) * | 2004-01-26 | 2006-02-16 | Applied Materials, Inc. | Integrated electroless deposition system |
US7064224B1 (en) * | 2005-02-04 | 2006-06-20 | Air Products And Chemicals, Inc. | Organometallic complexes and their use as precursors to deposit metal films |
US7265048B2 (en) | 2005-03-01 | 2007-09-04 | Applied Materials, Inc. | Reduction of copper dewetting by transition metal deposition |
US20070108063A1 (en) | 2005-09-28 | 2007-05-17 | Ebara Corporation | Layer forming method, layer forming apparatus, workpiece processing apparatus, interconnect forming method, and substrate interconnect structure |
JP2007123853A (ja) | 2005-09-28 | 2007-05-17 | Ebara Corp | 層形成方法、層形成装置、基材処理装置、配線形成方法、および基板の配線構造 |
TWI332532B (en) | 2005-11-04 | 2010-11-01 | Applied Materials Inc | Apparatus and process for plasma-enhanced atomic layer deposition |
US20070210448A1 (en) * | 2006-03-10 | 2007-09-13 | International Business Machines Corporation | Electroless cobalt-containing liner for middle-of-the-line (mol) applications |
TWI395335B (zh) | 2006-06-30 | 2013-05-01 | Applied Materials Inc | 奈米結晶的形成 |
CN101159253A (zh) | 2007-10-31 | 2008-04-09 | 日月光半导体制造股份有限公司 | 凸块下金属层结构、晶圆结构与该晶圆结构的形成方法 |
-
2008
- 2008-08-29 US US12/201,976 patent/US9051641B2/en not_active Expired - Lifetime
-
2009
- 2009-08-19 WO PCT/US2009/054307 patent/WO2010025068A2/en active Application Filing
- 2009-08-19 JP JP2011525098A patent/JP2012501543A/ja active Pending
- 2009-08-19 KR KR1020117007281A patent/KR101599488B1/ko active IP Right Grant
- 2009-08-19 CN CN2009801341725A patent/CN102132383A/zh active Pending
- 2009-08-19 CN CN201610339081.7A patent/CN106024598B/zh active Active
- 2009-08-21 TW TW101146410A patent/TWI654684B/zh active
- 2009-08-21 TW TW098128269A patent/TWI528456B/zh active
-
2015
- 2015-05-20 US US14/717,375 patent/US9209074B2/en not_active Expired - Fee Related
-
2016
- 2016-12-13 JP JP2016241204A patent/JP6449217B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1890401A (zh) * | 2003-10-17 | 2007-01-03 | 应用材料公司 | 用含钴合金对铜进行选择性自引发无电镀覆 |
CN1945808A (zh) * | 2005-10-07 | 2007-04-11 | 恩益禧电子股份有限公司 | 制造半导体器件的方法 |
TW200746268A (en) * | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
Non-Patent Citations (1)
Title |
---|
BOOYONG S.LIM,ANTTI RAHTU AND ROY G.GORDON: "Atomic layer deposition of transition metals", 《NATURE MATERIALS》 * |
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KR20110059741A (ko) | 2011-06-03 |
JP2012501543A (ja) | 2012-01-19 |
TWI528456B (zh) | 2016-04-01 |
TW201017763A (en) | 2010-05-01 |
WO2010025068A3 (en) | 2010-05-14 |
US20090053426A1 (en) | 2009-02-26 |
JP2017085131A (ja) | 2017-05-18 |
US9051641B2 (en) | 2015-06-09 |
TW201312656A (zh) | 2013-03-16 |
JP6449217B2 (ja) | 2019-01-09 |
WO2010025068A2 (en) | 2010-03-04 |
TWI654684B (zh) | 2019-03-21 |
CN106024598B (zh) | 2020-11-20 |
KR101599488B1 (ko) | 2016-03-07 |
CN102132383A (zh) | 2011-07-20 |
US9209074B2 (en) | 2015-12-08 |
US20150255333A1 (en) | 2015-09-10 |
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