CN107068591A - A kind of frock and method that electronic component on rigid substrates is unclamped by radiation source - Google Patents

A kind of frock and method that electronic component on rigid substrates is unclamped by radiation source Download PDF

Info

Publication number
CN107068591A
CN107068591A CN201710074619.0A CN201710074619A CN107068591A CN 107068591 A CN107068591 A CN 107068591A CN 201710074619 A CN201710074619 A CN 201710074619A CN 107068591 A CN107068591 A CN 107068591A
Authority
CN
China
Prior art keywords
radiation
processing
electronic component
substrate
released
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710074619.0A
Other languages
Chinese (zh)
Other versions
CN107068591B (en
Inventor
马赛厄斯·雷曼
汉斯·皮得·孟瑟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ltd Of Muehlbauer LP
Original Assignee
Ltd Of Muehlbauer LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ltd Of Muehlbauer LP filed Critical Ltd Of Muehlbauer LP
Publication of CN107068591A publication Critical patent/CN107068591A/en
Application granted granted Critical
Publication of CN107068591B publication Critical patent/CN107068591B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67144Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

The present invention describes a kind of frock and method of the electronic component unclamped on rigid substrates, wherein the frock includes radiation source, is radiated available for the processing by the wavelength formation electromagnetic radiation in infrared wavelength range.Control unit is designed by least one actuator, moves towards the rigid substrates that at least one electronic component is carried in processing radiation and frock, so that electronic component to be released is relative to positioning at processing radiation.The processing radiation scheme is used to excite heat absorption on electronic component to be released substrate and electronic component to be released in radiation areas through substrate, so as to release the engagement between electronic component to be released and substrate, especially adhesive bond, and in radiation areas, at least one width or a diameter for processing radiation cover the width or edge length of contact surface of the electronic component to be released towards substrate.

Description

A kind of frock and method that electronic component on rigid substrates is unclamped by radiation source
Technical field
A kind of frock and method that electronic component on rigid substrates is unclamped by radiation source will be introduced herein.
Background technology
In transferred-electron device, especially shift scattered electrons element when would ordinarily be encountered difficulty, these electronic components are just The trend that is increasingly miniaturized is being faced, the difficulty of associative operation is being added, such as electronic component is taken out from carrier substrate, and Precision aspect requirement is also improved constantly.
In order to which chip is spaced from each other, chip is generally installed on a carrier film and torn open by the separation method of such as sawing process It is divided into independent chip.
In order to which each chip is pulled down from carrier film, it is known that can be by such as pin so-called " ejector " displacer through carry Body film touches chip, and chip is lifted out into carrier film.
The T2 of DE690 01 797 describe a kind of frock for discharging chip from tack coat by pin.The tack coat is placed in On model, pin can be acted on tack coat through the model.In order to which chip is unclamped in simplification from tack coat, one is set in addition Radiation source, ultraviolet radiation can be used to pass through the perforate irradiation tack coat in model, so as to reduce the bonding force of tack coat.It is purple The tack coat region of UV radiation irradiation should be defined for fixing the marginal portion in the tack coat region of chip to be released.
It is a kind of to describe the chip unclamped by displacer in carrier film, wherein displacer by the method for practical proof It is to be acted on through carrier film on chip.Wherein, carrier film is lifted and deformed upon together with the chip arranged thereon, so that By chip from by release in the carrier film of adhesive application.The tension force in chip edge region to be released can so be reduced or peeled off and answered Power, so as to realize the disengaging of chip.But precondition is chip opposite carrier film relative stiffness so that act on a carrier film Pin stretches carrier film, so as to lift the chip to be released of carrier film.
However, this disengaging method is but not suitable for many different applications.For example, when electronic component is firm in distortion with carrier film Property aspect it is almost identical, therefore be flexible rather than rigid.For example when the thickness of electronic component is less than 30 μm, just it may go out Existing such case.In processing equipment sensitive electronic components, such as MEMS (English:micro electro mechanical Systems microelectromechanical systems) the minimum part of part or edge length less than 0.2mm, if using such disengaging method meeting It is very difficult.The disengaging method can not be similarly used on the rigid carrier substrate for carrying electronic component to be released, because this It must be difficult or can not pass through at all in this case through the pin of carrier film.
In addition, based on the chip on carrier substrate can be non-contiguously unclamped known to state-of-the-art technology present situation by radiation source.It is existing It is that will process radiation guiding to the chip surface on carrier substrate by deflection unit and condenser lens to have mode, is added so as to realize Heat.The separable adhesive that is heated between chip and carrier can be conducted heat to by so heated chip, so that real Existing chip departs from.
The B4 of DE 101 17 880 disclose a kind of method, wherein at least can be partly by the heat absorption of rigid carrier Chip is unclamped, and is moved to using vaccum suction pipe on collection substrate.Heat absorption is glued by acting on carrier through carrier large area The radiation source of mixture layer is realized.
The A1 of file US2009/0 000 109 describe the acquisition method of electronic component, the mount scheme of electronic component and Motor component mounting tool.These electronic components can depart from by ultraviolet from the carrier using adhesive application, and then Target base plate is moved to using transfer tool.
The A of file JP 2006-222 181 also introduce the method and frock that electronic component is moved to target base plate from carrier. In file disclosed in the A of JP 2006-22 181, the frock for departing from electronic component from carrier by ultraviolet is also occurred in that And method, its middle-ultraviolet lamp can disable adhesive.
The A1 of US2006/0 207 497 describe the method and frock that electronic component is moved to target base plate.For this first Electronic component should be unclamped from carrier, wherein being to fasten electronic component using adhesive tape on carrier.By radiation, particularly Ultraviolet radiation can weaken the bonding attribute of adhesive tape.It may then use that electronic component is moved to target base by a kind of mechanical device Plate.
The A1 of open source literature DE 10 2,013 112 666 describe the method that semiconductor chip is unclamped from film.Wherein By the optical check process during setting be calculated and determined control disengaging method Preepeeling processing steps it is lasting when Between.
The content of the invention
To be solved the problem of
Current task is to provide a kind of frock and method, for electronic component to be unclamped from rigid substrates, it can be ensured that this Plant and various different applications are equally applicable to the reliable operation of electronic component to be released, it is particularly possible to meet processing film-form electronics The requirement of element.Another task can be achieved on quickly and accurately to be operated to electronic component on rigid substrates.
Solution described herein
In order to solve this task, recommendation, which possesses to meet the frock of claim 1 feature and possess, meets claim 14 The method of feature.
The saddlebag that electronic component on rigid substrates can be unclamped contains radiation source, available for by infrared wavelength range The processing radiation of wavelength formation electromagnetic radiation.The control unit of the frock is designed by least one actuator, radiates processing Moved towards with the rigid substrates that at least one electronic component is carried in frock, so that electronic component to be released is relative to adding Positioned at work radiation.The processing radiation scheme is used for through substrate substrate and electronic component to be released in radiation areas Heat absorption is excited on electronic component to be released, so as to release the engagement between electronic component to be released and substrate, especially bond Agent is engaged.In radiation areas, the width or diameter for processing radiation at least cover contact of the electronic component to be released towards substrate The width or edge length in face.
Processing radiation at least preferentially excites heat absorption in the frock on electronic component.Will by heating the part Release towards the engagement on the parts surface of substrate, especially adhesive bond.
It is advantageous that only unclamp the region below the electronic component, towards the engagement side of the electronic component, especially glue Make a response first mixture engagement side.The unexpected common transfer of remaining engagement can thus be avoided.
It is described herein to be used to unclamp the frock of electronic component on rigid substrates, its can ensure to various different electronic components, The reliable operation of especially extremely thin, flexible, small or mechanical sensitivity electronic component.
In addition, solution proposed here, i.e., be limited to the active region processing radiation areas of electronic component to be released Process in radiation scope, wherein whole contact surface extension of the processing radiation scope along electronic component to be released.In other words, this Sample may insure that the radiation of the processing to electronic component contact surface to be released is only acted upon in radiation scope.So as to avoid because the energy is passed Pass and the electronic component close to electronic component to be released is impacted.The accurate heat transfer being consequently formed by processing radiation can To avoid being accidentally unlocked adjacent electronic elements, the accuracy of electronic component operation is improved.
Compared to based on frock known to state-of-the-art technology present situation, processing radiation can also uniformly simultaneously large area acts on radiation area On domain.It can so substantially reduce and realize that electronic component unclamps the duration of required energy transmission by processing radiation.
Design and characteristic
Document disclosed above is related to a frock for being used to unclamp electronic component from rigid substrates.Wherein described electronics member Part is referred in particular to also by the semiconductor device as " chip (Chip) " or " chip (Die) ".This base part typically possesses containing many The prismatic structures of individual side and two (upper and lower) polygons, particularly rectangular contact face.Electronic component to be released is towards base The contact surface of plate, if being designed to rectangle, with the first Breadth Maximum or edge length, and the second minimum widith or edge Length.Correspondingly, when radiation areas are ellipse, then process the cross section of radiation has the first Breadth Maximum in radiation areas Or first maximum gauge, particularly ellipse diameter, and the second minimum widith or the second minimum diameter.Wherein, the of processing radiation One width or the first diameter preferred pair answer the first width or edge length of contact surface, and the second width or second that processing is radiated are straight First width or edge length in footpath correspondence section.
Rigid substrates to be received are designed to receive at least one electronic component in the frock.It is arranged in the substrate On electronic component can be designed as rigidity.In addition, frock described herein can realize the processing to film-form electronic component, that is, turn round The minimum electronic component of Qu Gang property.
The substrate can use glass, glass ceramics and/or plastic material.Substrate to be accommodated is preferred to use pair in frock Process the material of radiation transparent.In the present invention, it is transparent to refer to that the substrate is permeable to the wave-length coverage of electromagnetic radiation.Should Wave-length coverage is in infrared wavelength range.This transparent design of substrate can be avoided or weakened to the processing by the substrate The absorption of radiation, so as to avoid unnecessary heat absorption in substrate.
In a kind of specification, the substrate is a kind of transparent wafer film, and it is with preferred pair infrared ray transparent and thermally-stabilised Bonding agent, especially adhesive be fixed on bottom plate, wherein the bottom plate use glass, glass ceramics and/or plastic material.
The radiation source is radiated through substrate designed for generation processing radiation, the wherein processing.The processing is radiated with one kind The mode for meeting substrate preferably possesses the electromagnetic radiation of permeable substrate.Meanwhile, the electromagnetic radiation wavelength that processing radiation is included In infrared wavelength range.For example, the electromagnetic radiation wavelength that processing radiation is included is in the range of short wave infrared radiation, also It is to say wave-length coverage in 780nm to 1400nm.The radiation source can be laser, especially optical fiber laser, the wherein optical fiber Laser can generate diameter 6 and process radiation and with pulse or non-pulse operational mode to 9mm.The laser output power is reachable 50 watts, wherein the energy of each pulse is 0.8 to 1mJ, the duration per subpulse is 100 to 300ms.Or, pulse is held The continuous time may also not in this range, and such as 10 to 30ms, and depending on electronic component to be released and/or in electricity to be released Connection between subcomponent and substrate.
In addition, the radiation source is also designed for radiating the heat transfer realized by means of processing in radiation scope with least portion Ground is divided to unclamp the connection between electronic component to be released and substrate.The connection to be released can ensure that at least one described electronics Element is fixed on the second layer of the rigid substrates, wherein the connection to be released can be the adhesive of adhesive layer form Connect and be arranged in radiation scope, especially along the whole contact surface of electronic component to be released.The adhesive layer is preferably comprised A kind of adhesive, the adhesive of especially hot disengaging, that is, a kind of lose in a heated condition are adhered to or adhesion characteristic or play The adhesive of strong decrease.The adhesive layer is preferred to use the form of adhesive films, and at least in part along the second layer of substrate Extension.In another structural shape, the adhesive layer possesses foaming layer, and it is designed for realizing in the presence of processing radiation Volume increases, such as by being bubbled in foaming layer formation, so as to the electronic component release that will be arranged on substrate.
In another structural shape, the frock also includes the shadow shield provided with through hole, is arranged in be received in frock On the first layer processing radiation route of substrate, the second layer phase comprising at least one electronic component of this layer and substrate to be received It is right.The processing radiation scheme is used for the electronic component to be released acted on through bulkhead through-hole and substrate in radiation scope. Correspondingly, control unit is designed for moving towards shadow shield and substrate by least one described actuator, so as to will treat Electronic component is unclamped to be scheduled in the relative position of shadow shield through hole and/or processing radiation.In radiation areas, what via through holes were projected The cross section of processing radiation corresponds to contact surface of the electronic component to be released towards substrate substantially.This allows processing radiation same When, uniformly act in whole radiation areas, wherein the radiation areas extend between electronic component to be released and substrate. Thus it can further shorten the energy transfer time unclamped needed for electronic component by processing radiation.
The shadow shield is placed in the processing radiation path before substrate.In a kind of specification, the shadow shield can be arranged In frock on the first layer of substrate to be received, and it is designed as rigid plate.The shadow shield is preferably designed for radiating processing Shaping.The shaping of processing radiation refers to the shape of cross section of adjustment processing radiation, that is, processing radiation in disclosure document Cross-sectional profiles.In other words, used in sunshade board radiates to be adapted to the shape and/or chi of electronic component to be released in regulation processing It is very little.In order to realize frock inexpensive configurability or be adapted to a variety of electronic components to be released, can by shadow shield can pine Relaxing to be fixed in frock so that the shadow shield is changed easy.
The through hole set in shadow shield is preferably along the thickness direction extension of the direction of processing radiation and/or shadow shield.It is described Through hole may be designed as cylindrical or prismatic, and the side wall of wherein through hole is parallel to each other.In a kind of preferred constructive form, shadow shield Through hole cross section meet the contact surface of electronic component to be released.Shadow shield is preferably placed in frock so that through hole center pair Quasi- processing radiation.In other words, through hole axis and processing radiation are concentric.It is each to be adapted to processing to adjust the frock for convenience Different electronic components to be released are planted, the through hole cross section of shadow shield can be adjustable.
The processing radiation that the source via radiation is formed is guided through the through hole of shadow shield.Wherein, the shadow shield is preferred Using to processing radiopaque material so that processing radiation only passes through shadow shield along through hole.In a kind of preferred structure pattern In, it is described processing radiation in shadow shield region mainly with the through hole arranged concentric.In addition, the processing radiation is in shadow shield Levelling is orientated in region.
In the side of dorsad substrate, that is, front side of the shadow shield along processing radiation direction, shadow shield may possess through adding Work radiates radiated radiating surface.In design through hole cross section can be made to be fully disposed in the radiating surface.In the radiation In the region that face and through hole cross section are not overlapped, shadow shield may absorb and/or reflecting part processing radiation.Correspondingly, it is described Shadow shield may be used for processing radiation shaping, so that it is guaranteed that the processing radiation cross-sectional in processing radiation areas is corresponded to substantially The contact surface of electronic component to be released.
In further improve, the frock in addition may be comprising radiation adjustment unit, guiding processing radiation, and can be used for The intensity distribution for change the radiation path of processing radiation, focusing on processing radiation and/or processing radiation is formed in radiation areas.Institute Stating radiation adjustment unit can be arranged on the processing radiation path between radiation source and shadow shield.The radiation adjustment unit is excellent Choosing is arranged immediately in front of shadow shield along processing radiation direction.In addition, the radiation adjustment unit can also be used to make processing spoke Penetrate parallel-oriented and/or variably regulation processing radiation cross section, especially diameter i.e. cross sectional dimensions.The radiation is adjusted Section unit is preferred for the size of regulation processing radiation cross-sectional, wherein the lines of outline aspect ratio of processing radiation cross-sectional is basic Keep constant.In other words, the size of processing radiation cross-sectional can be changed by the radiation adjustment unit, conversely protected simultaneously Hold the shape of cross section of processing radiation.In one embodiment, radiation can be adjusted in shading by the radiation adjustment unit The cross section of processing radiation on plate, especially diameter so that the radiating surface that only processing radiation is formed on shadow shield is adjustable.It is described The preferred Basic Design of radiating surface is circle, wherein can adjust the diameter of radiating surface by the radiation adjustment unit.The spoke Penetrate adjustment unit and may insure that on the one hand processing radiation is along the whole cross section of through hole by shadow shield, on the other hand reduction is through hiding Tabula rasa is absorbed and/or the processing of reflection is radiated.In other words, processing radiation can be adjusted with suitable by the radiation adjustment unit Close the cross section of shadow shield through hole.
In order to adjust processing radiation, the radiation adjustment unit may have adjustable first lens unit and adjustable The second lens unit, wherein the first lens unit has positive refractive power, the second lens unit has negative refractive power.First and Two lens may each have multiple optical elements, the lens that can for example adjust toward each other.Meanwhile, in regulation first and second The spacing between the first lens unit and the second lens unit is realized during lens.Furthermore it is possible to can by the first and/or second lens Be fixed on lens carrier slide, wherein the lens carrier slide can be adjustably positioned by lens actuator first and/ Or second lens unit, for example pass through electron lens driver or the electricapparatus driver being integrated in lens carrier slide. It especially can also change the spacing of lens unit to each other.
In wherein a kind of embodiment, described control unit can be used for lens actuator to position lens unit.Also can be by grasping Author is manually entered lens position.In addition, described control unit can be additionally used in the intensity for controlling radiation source.Also can be by operator's hand Dynamic input radiation intensity.
The radiation adjustment unit can be designed to radiation reduction unit, wherein processing radiation first passes through the first lens list Member, then passes through the second lens unit.Or, dry measure used in former times radiation adjustment unit may be designed as radial extension unit, wherein processing spoke Penetrate and first pass through the second lens unit, then pass through the first lens unit.
In wherein a kind of frock embodiment, the radiation adjustment unit can be arranged in the processing radiation at shadow shield rear Radiation path in, wherein shadow shield processing radiation radiation path in be arranged immediately at radiation source rear.This structure Pattern has advantageous effects, and the structure of the radiation adjustment unit is relatively simple.For example, by the way that shadow shield is being processed into radiation Radiation source rear is arranged immediately in radiation path, processing radiation will shape first, that is, it is single through radiation regulation at it Before member, adjusted first on shape of cross section.In order to adjust the cross section of processing radiation, especially process the cross section of radiation Processing radiation can be directed across the radiation adjustment unit by size to be adapted to electronic component to be released.Therefore, the radiation Adjustment unit has adjustable first lens unit containing positive refractive power, wherein first lens unit is designed to gather Focus lens.Especially described radiation adjustment unit can be made up of condenser lens.It can make it along processing adjusting the first lens unit The radiation direction of radiation may move, so as to adjust the cross section of processing radiation, especially process the cross sectional dimensions of radiation, So that processing radiation at least one width or at least one diameter meet electronic component to be released at least one width or Edge length, or process the contact surface that the cross section radiated substantially conforms to electronic component to be released.
The application advantage of radiation adjustment unit is, in the case of no radiation adjustment unit, unclamps minimum part Laser emission needs shadow shield to have very small through hole.This may cause laser emission can not reliably reach part.Radiation The use of adjustment unit solves this problem, because it allows to reduce the laser emission shaped through the shadow shield.Meanwhile, The use of radiation adjustment unit can allow to operate different sized parts of taking measurements greatly.
Meanwhile, the processing radiation cross-sectional size in radiation areas is adjusted by the spacing of condenser lens to substrate.For example, When radiating the diminution of the spacing between adjustment unit condenser lens and substrate, the cross sectional dimensions of processing radiation will in radiation areas Increase.Correspondingly, when radiating the increase of the spacing between adjustment unit condenser lens and substrate, processing radiation in radiation areas Cross sectional dimensions will reduce.
In addition, frock may include deflection unit, the deflection unit is arranged in the radiation path of processing radiation and can For deflecting processing radiation, for example, deflect 90 °.In other words, the deflection unit can be used for the radial road for changing processing radiation Footpath.Therefore, the deflection unit uses deflecting mirror form, and it is arranged in the radiation path of processing radiation.For example, described inclined Tilting mirror may be arranged between radiation source and shadow shield, between radiation source and radiation adjustment unit, between substrate and shadow shield, Or between shadow shield and radiation adjustment unit.It may be such that tool structure is compact using deflection unit, save space.
In further improve, the frock has image data acquiring unit, is used for electronics to be released member for gathering The view data of part.Described image data acquisition unit preferably has optic axis, and the optic axis prolongs with shadow shield through hole along Z-direction The longitudinal axis stretched is overlapped.In disclosure document, the through hole longitudinal axis refers to that through hole is extended along and the axle in through hole, preferably manages Solve the central shaft for through hole.Described image data acquisition unit can provide the positioning image of electronic component to be released for control unit Data.
Correspondingly, described control unit is used to gather by least one actuator and according to through image data acquiring unit To view data electronic component to be released is positioned with respect to shadow shield through hole.In wherein a kind of specification, it is described extremely A few actuator is used for substrate and shadow shield containing at least one electronic component toward each other in X direction and/or Y-direction is moved It is dynamic, and/or around the axis oscillating extended along Z-direction.
In disclosure document, X, Y non-coplanar vector corresponding with Z-direction, that is to say, that linear uncorrelated and preferred It is arranged perpendicularly to each other.
In order to ensure unclamping the electronic component by being processed radiation to substrate and departing from, the frock can have crawl Unit, especially vacuum fixture.The placement unit can be used for will by process radiation at least partly unclamp electronic component from Depart from substrate and capture.In addition, electronic component can be stored in intermediate store by the placement unit, such as with another The form of substrate, part conveyer belt or tray deck, does not combine the mode that can be taken out again especially.Or the placement unit Available for before the electronic component of crawl is transferred into other placement units, by electronic component along longitudinal direction or bearing rotary 180°.The frock can also have the delivery unit for intermediate store in addition, and the delivery unit is moved along with placement unit The vertical direction movement intermediate store in dynamic direction.
The method that also will now be presented for unclamping electronic component on rigid substrates herein.This method is included as rigid substrates offer Carry the side of at least one electronic component.In addition, the electromagnetic radiation in infrared wavelength range forms processing radiation, for swashing Heating transmission, so as to unclamp the adhesive connection between electronic component to be released and substrate.In addition, containing at least one electronics member The substrate of part and processing radiation move towards each other so that relative processing radiation positioning electronic component to be transferred.In another step In method and step, by be released electronics member of the processing radiation effects between substrate and electronic component to be released in radiation areas Part.Processing is radiated through substrate so that electronic component to be released is at least partially disengaged from substrate.Processing radiation in radiation areas At least one width or a diameter correspond to substantially electronic component to be released towards at least one width of the contact surface of substrate or One edge length.
In further optimization, methods described comprises the following steps:
Through hole of the guiding processing radiation through shadow shield so that the processing radiation in the radiation areas that via through holes are projected is transversal Face corresponds to contact surface of the part to be released towards rigid substrates substantially;
It is transversal by processing radiation in radiation adjustment unit regulation processing radiation, especially shadow shield region or radiation areas The diameter or size in face;
Processing radiation parallel is orientated by radiation adjustment unit so that processing radiation is being led to through shadow shield through hole It is parallel-oriented in bore region and/or concentric with through hole;And/or
The view data for electronic units fix to be released is gathered, wherein substrate and processing radiation is according to the figure gathered As data move towards each other, wherein substrate and shadow shield be toward each other in X direction and/or Y-direction movement, and/or around edge Z-direction parallel to the shadow shield through hole longitudinal axis extends axis oscillating.
Brief description of the drawings
For professional person, it is appreciated that according to description below and accompanying drawing based on the embodiment for not limiting understanding His target, feature, advantage and application may.Wherein, the feature for being described and/or illustrating individually or with arbitrary form is combined all Constitute the object of present disclosure, either its be grouped in claim or selected parts how.
Fig. 1 shows the schematic side elevation of frock first embodiment, the electronics member that the frock is used to unclamp on substrate Part.
Fig. 2 shows the profile of section A-A shown in Fig. 1.
Fig. 3 shows the enlarged fragment figure of frock shown in Fig. 1.
Fig. 4 shows the schematic side elevation of frock second embodiment, the electronics member that the frock is used to unclamp on substrate Part.
Fig. 5 shows the schematic side elevation of crawl frock first embodiment, wherein the crawl frock is used for from substrate It is upper to capture the electronic component unclamped.
Fig. 6 shows the schematic plan of crawl frock second embodiment, wherein the crawl frock is used for from substrate It is upper to capture the electronic component unclamped.
Embodiment
Fig. 1 shows the first embodiment of frock 10, and the frock 10 is used to unclamp the electronic component 14 on substrate 12.Institute State substrate 12 be designed to containing first layer 16 and corresponding thereto, the rigid plate of the second layer 18 of support electronic component 14, wherein base Plate can extend along X and Y-direction.Many scattered electronic components 14 are arranged on the second layer 18 of substrate 12.Substrate 12 is clamped In pillar 20, the pillar includes the first Linear actuator LA1 and rotating driver DA.The control unit ECU of frock 10 is used Substrate 12 is controllably moved along X-axis and Y-axis in by Linear actuator LA1, and surrounded by rotating driver DA along Z axis Swing, so that relative shadow shield positions the electronic component to be released 14 on substrate 12 axis steerable of direction extension.
Shadow shield 22 is designed to rigid plate, with the first layer 16 of substrate 12 at a distance of and parallel arrangement.Shadow shield 22 is at it The through hole 24 extended along the thickness direction of shadow shield 22 is provided with close to central area.Through hole 24 has the center extended along Z-direction Longitudinal axis M, and be designed to square.Shadow shield 22 is releasably securable to frock 10 by other unshowned pillars herein in addition It is interior.
Frock 10 includes radiation source 26, and the processing for forming electromagnetic radiation radiates 28, wherein the processing radiation 28 is used Depart from the electronic component 14 that will be accommodated by substrate 12 from substrate 12.Processing radiation 28 is directed across the through hole 24 of shadow shield 22 With substrate 12, so as to act on the part to be released 14 between infrabasal plate 12 and part to be released 14 in radiation areas 30.Therefore, base Plate 12 contains to processing 28 transparent materials of radiation.
Between shadow shield 22 and radiation source 26 in the radiation path of processing radiation 28, frock 10 has radiation regulation in addition The direction of unit 32 and deflecting mirror 34, wherein deflecting mirror 34 along processing radiation 28 is arranged in before radiation adjustment unit 32.
In the first area 36 of processing radiation 28, processing radiation 28 is penetrated from radiation source 26 in the form of electromagnetic radiation Go out, wherein the electromagnetic radiation can for example have 780nm to 1400nm wave-length coverage, and guide to deflecting mirror in X direction 34 directions.Deflecting mirror 34 is used to, by 90 ° of the deflection of processing radiation 28, guide processing radiation 28 to the second area 38 along Z-direction, Wherein described second area 38 is along the observation of processing radiation 28 positioned at the rear of deflecting mirror 34.Therefore, processing radiation 28 is via radiation What adjustment unit was oriented to.
Radiating adjustment unit 32 has adjustable first lens unit 40 and adjustable second lens unit 42, and its is each From can have multiple optical elements.First lens unit 40 has positive refractive power, and opposite second lens unit 42 has negative refractive power. Processing radiation 28 is directed over the first lens unit 40 with positive refractive power and the second lens with negative refractive power first Unit 42, wherein the cross section of the processing of second area 38 radiation 28 of processing radiation 28 is more than the 3rd region 44, wherein described the Two regions 38 are located at the rear of radiation adjustment unit 32 along 28 directions of processing radiation.In other words, in the embodiment shown in fig. 1, Radiate form of the adjustment unit 32 using radiation reduction unit.Radiating adjustment unit 32 is used for changeably regulation processing radiation 28 Cross section, the cross sectional dimensions of especially processing radiation 28, and it is parallel-oriented processing is radiated 28.Therefore, radiation adjustment unit 32 there is the second Linear Driving LA2 to be used to adjust the first and second lens units 40 and 42.Control unit ECU be designed for by Second Linear actuator LA2 makes the first and second lens units 40 and 42 controllably be moved along Z-direction toward each other, so as to To adjust the spacing d between the first and second lens units 40 and 42.
Fig. 2 shows the profile of section A-A shown in Fig. 1, according to Fig. 2, and processing radiation 28 is through radiation adjustment unit Shadow shield 22 is reached after 32.The region that shadow shield 22 is processed the radiation of radiation 28 is referred to as radiating surface 46 herein.Radiating surface 46 Almost circular shape with a diameter of D1.The through hole 24 of shadow shield 22 is designed to contain rectangular cross section 48, the rectangle The D2 containing diagonal of cross section 48.The cross section 48 of through hole 24 is fully disposed in radiating surface 46 so that the diameter D1 of radiating surface 46 More than the diagonal D2 of cross section 48 of through hole 24.As depicted in figs. 1 and 2, only part processing radiation 28 passes through through hole 24, correspondence The cross section 48 of through hole 24.The shape of the cross section 48 of through hole 24 corresponds to the contact surface 52 of electronic component to be released substantially.Processing The remainder 50 of radiation 28 does not reach the cross section 48 of through hole 24, will be blocked plate 22 and absorbs or reflect.So in processing spoke Penetrate before 28 arrival radiation areas 30, shaped by 22 pairs of processing radiation 28 of shadow shield.Therefore, add by the regulation of shadow shield 22 Before the shape of cross section of work radiation 28, first by the cross sectional dimensions of the radiation regulation processing of adjustment unit 32 radiation 28.
Adjustment unit 32 is radiated designed for the radiating surface 46 on changeably regulation shadow shield 22.Particularly advantageously, when Radiate the regulation radiating surface 46 of adjustment unit 32 and make it that the cross section 48 of radiating surface 46 and through hole 24 is concentric, and radiating surface 46 is straight Footpath D1 is more than the diagonal D2 of cross section 48.In order to improve the energy efficiency of frock 10, radiation adjustment unit 32 can be controlled to drop The low processing for being blocked the absorption of plate 22 radiates 28 partial radiations 50, while ensuring the radiation along the whole cross section 48 of through hole 24.For This, it is possible to reduce the difference between the diameter D1 of radiating surface 46 and the diagonal D2 of cross section 48, while ensuring that through hole 24 is transversal Face 48 is fully disposed in radiating surface 46.
As shown in figure 1, only reaching substrate 12 by the partial radiation of the processing radiation 28 of the cross section 48 of through hole 24 and treating pine Open the radiation areas 30 between electronic component 14.Wherein, the cross section of processing radiation 28 substantially conforms to treat in radiation areas 30 Unclamp contact surface 52 of the electronic component 14 towards substrate 12.In the 4th region 54 of processing radiation 28, wherein the 4th area Domain 54 is located between radiation areas 30 and the radiating surface 46 of shadow shield 22 in the radiation path of processing radiation 28, and processing radiation 28 is parallel Be orientated and with the arranged concentric of through hole 24.
Frock 10 additionally comprises image data acquiring unit 56, and the second layer 18 with substrate 12 is positioned opposite.View data The longitudinal axis M that the optical axial O of collecting unit 56 extends with the through hole 24 of shadow shield 22 along Z-direction is overlapped.Image data acquiring list Member 56 positions the view data BD of electronic component 14 to be released designed for collection and is supplied to control unit ECU.It is basic herein On, control unit ECU is designed for linear according to the view data BD controls first collected through image data acquiring unit 52 Driver LA1 and rotating driver DA, wherein removable containing electronics member by the first Linear actuator LA1 and rotating driver DA The substrate 12 of part 14, thus by electronic component 14 to be released in the plane through Y-axis and X-axis tensioning the relative through hole of shadow shield 22 24 are positioned.
Frock 10 has unshowned vacuum fixture herein in addition, for by by processing the electronic component that radiation 28 is unclamped 14 take out from substrate.
Fig. 3 shows the enlarged fragment figure of radiation areas 30.On the second layer 18 of substrate 12, in substrate and electronic component Adhesive films are arranged between 14, are extended along the second layer 18 of substrate 12.Adhesive films 58 include hot separating adhesive, its Adhesive connection is formed between the contact surface 52 of electronic component 14 and substrate 12, so that electronic component 14 is fixed on into substrate 12 On.As shown in figure 3, radiation areas 30 extend along the whole contact surface 12 of part to be released.Reach the processing in radiation scope 30 Radiation 28 can be absorbed by adhesive phase 54 and/or by the contact layer 52 of electronic component 14 to be released, so that processing be radiated 28 energy is converted into heat.In other words, processed radiation 28 excites to form heat in the adhesive 58 in radiation areas 30 Stream.It is consequently formed to the heat transfer of adhesive films 58 so that the adhesive of adhesive films 58 loses in radiation areas 30 Adhesion and bonding attribute, so as to realize the disengaging that adhesive is connected between electronic component 14 to be released and substrate 12.
In another embodiment being described below, similar or effect identical parts will be used and previous embodiment phase Same fiducial mark.The parts do not introduced again in another embodiment in terms of its attribute with the phase in previous embodiment Answer parts identical.
Fig. 4 shows second of embodiment of the frock 10 of the electronic component 14 on transfer base substrate 12.With the institutes of Fig. 1 to 3 Show that embodiment is different, shadow shield 22 is located between radiation source 26 and deflecting mirror 34 in the radiation path of processing radiation 28.Therefore, plus Work radiation 28 directly reaches shadow shield 22 after being projected in the first area 36 from radiation source 26, and is guided through through hole 24.So, processing radiation 28 shapes through shadow shield 2, and passes through the guiding of deflecting mirror 24 to radiation adjustment unit 32.In other words, Before the size of processing radiation 28 is reduced, processing radiation 28 is shaped first.Correspondingly, compared with embodiment illustrated in fig. 1, hide The diameter of the through hole 24 of tabula rasa 22 is bigger.For example, the diameter of through hole 24 is up to 8mm.
The center of the alignment processing of through hole 24 radiation 28 so that it is concentric and along X that the middle longitudinal axis M of through hole 24 and processing radiate 28 Axle is arranged.In some region in first area 36 and processing 28 radiation paths of radiation, processing radiation 28 is close in deflection Front, the rear of mirror 34 are parallel-oriented.The processing shaped through shadow shield 22 radiates 28 shape of cross sections even in passing through deflecting mirror 34 are also substantially achieved holding afterwards with radiation adjustment unit 32.In other words, processing radiation 28 in further radiation path, That is maintaining the aspect ratio of contour line substantially in the region 44 of second area 38 and the 3rd of processing radiation 28.
The difference of second embodiment and Fig. 1 to embodiment illustrated in fig. 3 based on Fig. 4, which also resides in radiation adjustment unit 32, not to be had There is the second lens unit 32, therefore the structure of frock 10 is simpler.
Processing radiation 28 passes through the first lens unit in radiation adjustment unit 32 first before radiation areas 30 are reached 40.First lens unit 40 is removable along Z axis opposing substrate 12 by the second Linear actuator LA2 by the way of condenser lens It is dynamic, so as to adjust the spacing d ' between the first lens unit 40 and substrate 12.In the 3rd region 44 of processing radiation 28, processing Radiation 28 is focused on, wherein the 3rd region 44 is located at the radiation path of radiation adjustment unit 32 rear processing radiation 28 It is interior.Can be with the cross sectional dimensions of processing radiation 28 in step-less adjustment radiation areas 30 by adjusting spacing d '.In order to set radiation The minimum cross-section of processing radiation 28 in region 30, the focal length of its first lens unit 40 of correspondence is made when selecting spacing d '.
Fig. 5 shows the side view of crawl frock, the electronic component 14 unclamped for capturing from substrate 12.For general view Reason, does not show that frock 10 in this illustration, and it can be used for unclamping the electronic component 14 on substrate 12.The crawl frock tool There is placement unit 60, the electronic component 14 designed for that will unclamp is captured from substrate 12, rotate 180 ° around X-axis, deliver to The branchpoint of another placement unit 62.Placement unit 62 along Z axis designed for moving.Another placement unit 62 is designed for Electronic component 14 is captured from the branchpoint of placement unit 60, and is stored in intermediate store, as shown in Figure 6.Correspondingly, it is another Placement unit 62 is removable along Y-axis and Z axis.Placement unit 60 and another placement unit 62 are vacuum fixture.
In wherein a kind of specification, another placement unit is additionally used in addition to placement unit 60 and placement unit 62 (not shown).In the specification, crawl of the placement unit 60 to part 14 can replace single by placement unit 62 and another crawl First (not shown) is realized.
Fig. 6 shows another embodiment of crawl frock.Another placement unit 62 captures the electricity unclamped from substrate 12 Subcomponent 14, and transported along Y-axis to intermediate store 64.Intermediate store 64 in the present embodiment as along X-axis, i.e. with it is another The movable part conveyer belt of the vertical direction of placement unit 62, electronic component 14 is stored thereon and can be crawled again.It is middle Memory 64 is also designed to along the moveable conveyer belt of X-axis, arranges that at least one crawl substrate or tray deck are used to grab thereon Take multiple electronic components.

Claims (15)

1. one kind can unclamp the frock (10) of electronic component (14) on rigid substrates (12), it is characterised in that include:
Radiation source (26), (28) are radiated available for the processing by the wavelength formation electromagnetic radiation in infrared wavelength range;
Control unit (ECU) is designed by least one actuator (LA1, DA), processing is radiated in (28) and frock and is carried extremely The rigid substrates (12) of a few electronic component (14) are moved towards, so that electronic component (14) to be released is relative to processing The positioning of (28) place is radiated, wherein
Processing radiation (28) through substrate (12) substrate (12) and electronic component to be released (14) designed for radiating Heat absorption is excited on electronic component to be released (13) in region (30), so as to release electronic component to be released (14) and substrate Engagement between 912, especially adhesive bond, and
In radiation areas (30), at least one width of processing radiation (28) or a diameter cover electronic component to be released (14) towards substrate (12) contact surface (52) width or edge length.
2. frock according to claim 1, it is characterised in that comprising shadow shield (22), the shadow shield (22) is provided with logical Hole (24) is simultaneously arranged on the first layer (16) of substrate (12) to be received in frock (10) processing radiation (28) route, the layer (16) With the second layer (18) comprising at least one electronic component (14) of substrate to be received (12) relatively, wherein
The processing radiation (28) through shadow shield (22) through hole (24) and substrate (12) designed for acting on radiation scope (30) on the electronic component to be released (14) in,
In radiation areas (30), the cross section for the processing radiation (28) that via through holes (24) are projected corresponds to electronics member to be released substantially Contact surface (52) of the part (14) towards substrate (12).
3. frock according to claim 1 or 2, it is characterised in that substrate (12) includes transparent to processing radiation (28) Material.
4. the frock according to Claims 2 or 3, it is characterised in that shadow shield (22) loosely can be fixed in frock,
The cross section (48) of shadow shield (22) through hole (24) meets the contact surface (52) of electronic component to be released (14), and/or
The cross section (48) of through hole (24) is adjustable, its shape of cross section is met the contact surface of electronic component to be released (14) (52)。
5. the frock according to any one of claim 2 to 4, it is characterised in that processing radiation (28) is in shadow shield (22) area It is parallel-oriented and/or concentric with through hole (24) in domain.
6. the frock according to any one of claim 1 to 5, it is characterised in that the frock may be adjusted comprising radiation in addition Save unit (32), guiding processing radiation (28), for radiating processing, (28) parallel-oriented and/or variably adjustment region (44) cross section of processing radiation (28) in, wherein the region (44) are located at the processing radiation (28) at radiation regulation (32) rear In path.
7. frock according to claim 6, it is characterised in that shadow shield (22) is arranged in radiation adjustment unit (32) rear Processing radiation (28) path in, or
Shadow shield (22) is arranged in processing radiation (28) path between radiation source (26) and radiation adjustment unit (32).
8. the frock according to claim 6 or 7, it is characterised in that the radiation adjustment unit (32) is adjustable with one The first lens unit (40) of section and adjustable second lens unit (42) are used to adjust processing radiation (28), wherein the One lens unit (40) has positive refractive power, and the second lens unit (42) has negative refractive power, wherein the first lens unit (40) And the second spacing (d) between lens unit (42) can adjust.
9. the frock according to claim 6 or 7, it is characterised in that radiation adjustment unit (32) has containing positive refractive power First adjustable lens unit (40) is to adjust processing radiation (28), wherein the first lens unit (40) is adjustable, makes it along processing The radiation direction for radiating (28) is adjustable, so that processing radiation (28) cross section in adjustable radiation areas (30).
10. frock according to claim 8, it is characterised in that
Processing radiation (28) first passes through the first lens unit (40), then passes through the second lens unit (42), or,
Processing radiation (28) first passes through the second lens unit (42), then passes through the first lens unit (40).
11. the frock according to any one of claim 1 to 10, it is characterised in that frock has the image containing optic axis (O) Data acquisition unit (56), the optic axis (O) is overlapped with the longitudinal axis (M) that shadow shield (22) through hole (24) extends along Z-direction, design For gathering the positioning view data (BD) of electronic component to be released (14) and being supplied to control unit (ECU), wherein,
Described control unit (ECU) is used for by least one actuator (LA1, DA) and according to through image data acquiring unit (56) view data (BD) collected is logical to the relative processing radiation (28) of electronic component to be released (14) and/or shadow shield (22) Hole (24) is positioned.
12. the frock according to any one of claim 2 to 11, it is characterised in that at least one actuator (LA1, DA the substrate (12) and shadow shield (22) for) being used to containing at least one electronic component (14) are relative to each other in X direction and/or Y side To movement, and/or around the axis oscillating extended along Z-direction.
13. the frock according to any one of claim 1 to 12, it is characterised in that the frock is additionally comprised:
Placement unit, especially vacuum fixture, for capturing the electronic component unclamped (14) from substrate (12), and/or
Deflection unit (34), is arranged on the radiation path of processing radiation (28) and designed for deflection processing radiation (28).
14. the method that one kind unclamps electronic component (14) on rigid substrates (12), it is characterised in that comprise the steps of:
The side (18) for carrying at least one electronic component (14) is provided for rigid substrates (12);
Electromagnetic radiation in infrared wavelength range forms processing radiation (28), for unclamping at least one electronics on substrate () 12 Element (14);
Substrate (12) and processing radiation (28) containing at least one electronic component (14) move towards each other so that relative processing spoke Penetrate (28) and position electronic component (14) to be transferred;
By processing radiation (28) between substrate (12) and electronic component to be released (14) it is to be released in radiation areas (30) Electronic component excites heat transfer on (14), wherein processing radiation (28) passes through substrate (12) so that electronic component (14) to be released Connection, especially adhesive connection between substrate (12) are unclamped, and wherein processing radiates (28) extremely in radiation areas (30) Few a width or a diameter correspond to substantially electronic component to be released (14) towards substrate (12) contact surface (52) at least One width or an edge length.
15. method according to claim 14, it is characterised in that additionally comprise the following steps:
Guiding processing radiation (28) passes through the through hole (24) of shadow shield (22) so that the radiation areas (30) that via through holes (24) are projected Interior processing radiation (28) cross section corresponds to contact surface (52) of the part to be released (14) towards rigid substrates (12) substantially;
By in radiation adjustment unit (32) regulation processing radiation (28), especially shadow shield (22) region or radiation areas (30) The diameter or size of processing radiation (28) cross section;
Processing is set to radiate (28) by radiation adjustment unit (32) parallel-oriented so that processing radiation (28) passes through shadow shield (22) Through hole (24), and in through hole (24) area in parallel orientation, and/or with through hole) it is 24 concentric;And/or
Gather the view data (BD) positioned for electronic component to be released (14), wherein substrate (12) and processing radiation (28) root Moved towards each other according to acquired image data (BD), wherein substrate (12) and shadow shield (22) toward each other in X direction and/ Or Y-direction movement, and/or extend axis oscillating around along the Z-direction parallel to shadow shield (22) through hole (24) longitudinal axis (M).
CN201710074619.0A 2016-02-11 2017-02-11 Tool and method for loosening electronic element on rigid substrate by means of radiation source Active CN107068591B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016001602.7 2016-02-11
DE102016001602.7A DE102016001602A1 (en) 2016-02-11 2016-02-11 Apparatus and method for releasing electronic components provided on a substrate by means of a radiation source

Publications (2)

Publication Number Publication Date
CN107068591A true CN107068591A (en) 2017-08-18
CN107068591B CN107068591B (en) 2022-04-29

Family

ID=59409882

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710074619.0A Active CN107068591B (en) 2016-02-11 2017-02-11 Tool and method for loosening electronic element on rigid substrate by means of radiation source

Country Status (2)

Country Link
CN (1) CN107068591B (en)
DE (1) DE102016001602A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110911334A (en) * 2019-11-13 2020-03-24 东莞普莱信智能技术有限公司 Positioning and laminating device and method for miniature electronic element

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030207497A1 (en) * 2001-07-16 2003-11-06 Michel Koopmans Method and system for attaching semiconductor components to a substrate using local radiation curing of dicing tape
CN1742366A (en) * 2002-11-29 2006-03-01 弗兰霍菲尔运输应用研究公司 Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer
JP2006222181A (en) * 2005-02-09 2006-08-24 Matsushita Electric Ind Co Ltd Apparatus and method for mounting chip
JP2007109799A (en) * 2005-10-12 2007-04-26 Shibuya Kogyo Co Ltd Plate-like article pick-up method and device therefor
JP2007194433A (en) * 2006-01-19 2007-08-02 Canon Machinery Inc Pickup device and pickup method
US20070178631A1 (en) * 2006-02-02 2007-08-02 Semiconductor Energy Laboratory Co., Ltd. Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus
CN101019206A (en) * 2004-08-02 2007-08-15 积水化学工业株式会社 IC chip manufacturing method
CN101246810A (en) * 2006-11-29 2008-08-20 日东电工株式会社 Method for attaching and peeling pressure-sensitive adhesive sheet, attaching and peeling apparatus of pressure-sensitive adhesive sheet
US20090000109A1 (en) * 2004-10-04 2009-01-01 Matsushita Electric Industrial Co., Ltd. Electronic Component Pickup Method, Electronic Component Mounting Method and Electronic Component Mounting Apparatus
JP2010219264A (en) * 2009-03-17 2010-09-30 Stanley Electric Co Ltd Semiconductor light-emitting device
CN101862908A (en) * 2009-04-03 2010-10-20 肖特公开股份有限公司 Workpiece separation method and equipment
CN101970168A (en) * 2009-03-17 2011-02-09 无锡尚德太阳能电力有限公司 Irradiating a plate using multiple co-located radiation sources
CN102129955A (en) * 2009-12-14 2011-07-20 日东电工株式会社 Method and apparatus for separating adhesive tape
CN102177214A (en) * 2008-10-07 2011-09-07 昭和电工株式会社 Ultraviolet curing removable adhesive composition and adhesive sheet using the same
JP2012142374A (en) * 2010-12-28 2012-07-26 Sekisui Chem Co Ltd Semiconductor chip manufacturing method
CN102825390A (en) * 2011-06-15 2012-12-19 先进科技新加坡有限公司 Laser apparatus for singulation, and a method of singulation
WO2014058601A1 (en) * 2012-10-11 2014-04-17 International Business Machines Corporation Advanced handler wafer debonding method
CN104040697A (en) * 2012-01-25 2014-09-10 日东电工株式会社 Semiconductor device manufacturing method, and adhesive film used in semiconductor device manufacturing method
CN104508815A (en) * 2012-07-31 2015-04-08 索泰克公司 Methods for fabrication of semiconductor structures using laser lift-off process, and related semiconductor structures

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69001797T2 (en) 1989-12-08 1994-01-27 Sumitomo Electric Industries Recording method and apparatus for a chip-like part.
DE10117880B4 (en) 2001-04-10 2009-01-29 Mühlbauer Ag Method for separating electronic components from a composite
CH707236B1 (en) * 2012-11-23 2016-10-31 Besi Switzerland Ag A method for detaching semiconductor chips from a film.

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030207497A1 (en) * 2001-07-16 2003-11-06 Michel Koopmans Method and system for attaching semiconductor components to a substrate using local radiation curing of dicing tape
CN1742366A (en) * 2002-11-29 2006-03-01 弗兰霍菲尔运输应用研究公司 Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer
CN101019206A (en) * 2004-08-02 2007-08-15 积水化学工业株式会社 IC chip manufacturing method
US20090000109A1 (en) * 2004-10-04 2009-01-01 Matsushita Electric Industrial Co., Ltd. Electronic Component Pickup Method, Electronic Component Mounting Method and Electronic Component Mounting Apparatus
JP2006222181A (en) * 2005-02-09 2006-08-24 Matsushita Electric Ind Co Ltd Apparatus and method for mounting chip
JP2007109799A (en) * 2005-10-12 2007-04-26 Shibuya Kogyo Co Ltd Plate-like article pick-up method and device therefor
JP2007194433A (en) * 2006-01-19 2007-08-02 Canon Machinery Inc Pickup device and pickup method
US20070178631A1 (en) * 2006-02-02 2007-08-02 Semiconductor Energy Laboratory Co., Ltd. Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus
CN101246810A (en) * 2006-11-29 2008-08-20 日东电工株式会社 Method for attaching and peeling pressure-sensitive adhesive sheet, attaching and peeling apparatus of pressure-sensitive adhesive sheet
CN102177214A (en) * 2008-10-07 2011-09-07 昭和电工株式会社 Ultraviolet curing removable adhesive composition and adhesive sheet using the same
JP2010219264A (en) * 2009-03-17 2010-09-30 Stanley Electric Co Ltd Semiconductor light-emitting device
CN101970168A (en) * 2009-03-17 2011-02-09 无锡尚德太阳能电力有限公司 Irradiating a plate using multiple co-located radiation sources
CN101862908A (en) * 2009-04-03 2010-10-20 肖特公开股份有限公司 Workpiece separation method and equipment
CN102129955A (en) * 2009-12-14 2011-07-20 日东电工株式会社 Method and apparatus for separating adhesive tape
JP2012142374A (en) * 2010-12-28 2012-07-26 Sekisui Chem Co Ltd Semiconductor chip manufacturing method
CN102825390A (en) * 2011-06-15 2012-12-19 先进科技新加坡有限公司 Laser apparatus for singulation, and a method of singulation
CN104040697A (en) * 2012-01-25 2014-09-10 日东电工株式会社 Semiconductor device manufacturing method, and adhesive film used in semiconductor device manufacturing method
CN104508815A (en) * 2012-07-31 2015-04-08 索泰克公司 Methods for fabrication of semiconductor structures using laser lift-off process, and related semiconductor structures
WO2014058601A1 (en) * 2012-10-11 2014-04-17 International Business Machines Corporation Advanced handler wafer debonding method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110911334A (en) * 2019-11-13 2020-03-24 东莞普莱信智能技术有限公司 Positioning and laminating device and method for miniature electronic element

Also Published As

Publication number Publication date
CN107068591B (en) 2022-04-29
DE102016001602A1 (en) 2017-08-17

Similar Documents

Publication Publication Date Title
JP5198203B2 (en) Processing equipment
CN101714499B (en) A machining device
KR102285101B1 (en) Inspection method, inspection apparatus, laser machining apparatus and expansion apparatus of workpiece
EP2045034A1 (en) Flip-chip mounting apparatus
US8299397B2 (en) Laser dicing apparatus and dicing method
TWI706821B (en) Laser processing device
TWI609732B (en) Laser processing device
CN104570594B (en) The method of Embosser and article of manufacture
TW201213034A (en) Apparatus for laser beam machining
JP6506137B2 (en) Processing method of bonded substrate
CN102564327B (en) Assay method and determinator
US20110056922A1 (en) Laser processing method for workpiece
CN107470782A (en) The inspection method of laser beam
TW200937514A (en) Semiconductor chip fabrication method
KR20130137534A (en) Method for machining wafer
KR20170087018A (en) Wafer processing method
KR20130075656A (en) Wafer processing method and laser machining apparatus
TW201600208A (en) Laser processing apparatus
KR20210145141A (en) Dynamic release tape for assembly of individual components
JP2014106311A (en) Foreign substance removal device, foreign substance removal method
JP4766258B2 (en) Pickup device for plate-like article
JP6506662B2 (en) Wafer processing method
CN107068591A (en) A kind of frock and method that electronic component on rigid substrates is unclamped by radiation source
KR20220019042A (en) Compensation of positional errors in the assembly of individual components by adjustment of optical system characteristics
JP6641071B1 (en) Work separation apparatus and work separation method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant