CN1074035C - 金属层用的化学机械抛光淤浆 - Google Patents

金属层用的化学机械抛光淤浆 Download PDF

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CN1074035C
CN1074035C CN95196473A CN95196473A CN1074035C CN 1074035 C CN1074035 C CN 1074035C CN 95196473 A CN95196473 A CN 95196473A CN 95196473 A CN95196473 A CN 95196473A CN 1074035 C CN1074035 C CN 1074035C
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马修·内维尔
戴维·J·弗拉克
迈克尔·A·卢卡瑞里
黛布拉·L·谢尔伯
洪正宏
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Abstract

一种用于金属层化学机械抛光的淤浆，含有均匀分散在稳定的含水介质中的纯度高、细的金属氧化物粒子。

Description

金属层用的化学 机械抛光淤浆
本发明涉及一种用于半导体装置平面的化学机械抛光淤浆，更具体地，涉及一种用于抛光金属层的化学机械抛光淤浆。
半导体晶片通常包括一基片，如砷化硅或砷化镓晶片，在该晶片上形成了许多集成电路。集成电路通过基片上的图案形成区域和基片上的一些层化学地和物理地并入到基片中。这些层通常由具有导电性、绝缘性或半导体性质的各种材料制备。为了使装置具有高的成品率，关键的是从一种平的半导体晶片开始，因此对半导体晶片的一侧或部分进行抛光通常是必要的。如果装置制备的加工步骤在不均匀的晶片表面上进行，则可能产生许多问题，这些问题可能导致大量不能操作的装置。例如，在制备现代的半导体集成电路时，必要的是在先前已形成的结构上形成导电线或类似的结构。但是，先前的表面形成通常使晶片的顶表面外形高度不规则，具有凸起、不平整高度的区域、凹坑、沟槽和其它类似类型的表面不规则性。结果是，为了确保照相平版印刷期间的充分的聚焦深度，这些平面的完全平面化是必要的，以及在制备过程的多个工序中除去任何不规则性和表面缺陷也是必要的。尽管已有几种保证晶片表面平面性的抛光技术，但是采用化学机械平面化的方法或抛光技术已广泛用在装置制备的各个工序中使晶片的表面平面化，以提高产率、性能和可靠性。通常，化学机械抛光(“CMP”)包括在受控的下降的压力下的晶片的圆周运动，抛光垫被常规的抛光淤浆饱和。关于化学机械抛光的更详细的解释，请参见美国专利4,671,851、4,910,155和4,944,836，将这些专利说明书引入本文作参考。
可获得的CMP氧化物方法中用的典型的抛光淤浆含有研磨剂，如在酸性或碱性溶液中的二氧化硅或氧化铝。例如，美国专利5,245,790(属于Jerbic)描述了一种用于半导体晶片的化学机械抛光的技术，该技术使用超声能源和KOH溶液中的基于二氧化硅的淤浆。属于Yu等人的美国专利5,244,534公开了一种在绝缘层内形成导电插件的方法。该方法得到了一种材料(如钨)的插件，该带有绝缘层的插件比用常规的插件形成技术而得到的表面更平整。含有研磨粒子(如Al2O3)和蚀刻剂(如H2O2)和KOH或NH4OH的淤浆用在第一步CMP工序中以便以一可预测的速率除去钨，同时除去极少量的绝缘层。第二步CMP工序利用一种由研磨剂(如Al2O3)和氧化组分(由H2O2和H2O组成)组成的淤浆。类似地，属于Yu等人的美国专利5,209,816公开了一种CMP淤浆，该淤浆包括H3PO4、H2O2、H2O和固体研磨剂。属于Medellin的美国专利5,157,876和5,137,544公开了半导体晶片抛光用的无应力的CMP试剂，该试剂包括一种水、胶体二氧化硅和含有次氯酸钠的漂白剂的混合物。美国专利4,956,313，属于Cote等人，公开了一种由Al2O3粒子、去离子水、碱和氧化剂构成的淤浆。
由于CMP已被成功地用于抛光氧化物表面许多年，半导体工业品的最近的趋势是利用CMP技术和淤浆来抛光金属层。但是，即使一些淤浆和抛光技术已被直接地用在金属层、薄膜和插件，如钨、铝和铜，装置制造用的这些金属的化学机械抛光还未被很好地理解或开发。结果是，在金属层上应用常规的二氧化硅或氧化铝淤浆导致不可接受的抛光性能和产生了质量差的装置。因此，存在一种改进的化学机械抛光技术和改进的CMP淤浆的需要，以提供均一的金属层，没有不需要的污染物和表面缺陷。
本发明涉及半导体装置的金属层抛光用的CMP淤浆，该淤浆含有纯度高的、均匀地分散在稳定的含水介质中的细金属氧化物粒子。该粒子的表面积约为40m2/g～430m2/g，聚集粒径分布(aggregate size distribution)小于约1.0微米，平均聚集直径小于约0.4微米，以及一个足以排斥和克服粒子间的范德华力的力。在一个优选的实施方案中，金属氧化物粒子还有一个大于约±10毫伏的最大Z电位。还公开了一种用本发明的抛光淤浆抛光钨层的方法。
图1是一透射电子显微图，它以50,000倍的放大倍数示出了本发明的热解法的氧化铝(fumed alumina)的金属氧化物粒子。
图2是本发明的抛光淤浆用的热解法氧化铝的金属氧化物粒子的聚集粒径分布。
图3是本发明的抛光淤浆用的热解法二氧化硅(气相二氧化硅)的金属氧化物粒子的聚集粒径分布。
图4示出了X轴方向上的pH值与Y轴方向上的Z电位(毫伏)的理论曲线。
图5示出了粒子组成对一系列使用本发明的抛光淤浆的晶片的钨的抛光速率和对热氧化物的选择性的影响。X轴表示晶片数，Y轴表示钨的抛光速率(/分钟)。
图6示出了粒子结构、相态和固含量对一系列利用本发明的抛光淤浆的晶片的钨抛光速率的影响。X轴表示晶片数，Y轴表示钨的抛光速率(/分钟)。
图7示出了一系列利用本发明的抛光淤浆的晶片的铝的抛光速率和对热氧化物的选择性。X轴表示晶片数，Y轴表示铝的抛光速率(/分钟)。
图8通过绘制沉淀物的量与时间的函数关系图，示出了聚集粒径分布和Z电位对胶体稳定性的影响。
本发明涉及含有均匀分散在含水的介质中的高纯、细金属氧化物粒子的化学机械抛光淤浆。本发明的粒子与现有技术的“研磨粒子”的区别在于它具有约40-430m2/g的表面积、小于1.0微米的聚集粒径分布、小于约0.4微米的平均聚集直径和一个足以排斥和克服粒子间范德华力的力。用于说明，图1是本发明的淤浆中的热解法氧化铝的金属氧化物粒子的TEM(透射电子显微图)。
粒子的表面积，通过S.Brunauer,P.H.Emmet和I.Teller，在美国化学学会杂志(J.Am.Chemical Society)，第60卷，第309页(1938)的氮气吸附法测定，通常称为BET，一般在约40～430m2/g的范围内。根据所需的研磨度，粒子可占淤浆的0.5％～55％。而金属氧化物粒子的磨耗是粒子的组成、结晶度和结晶相态(如r-氧化铝或α-氧化铝)的函数。为了达到所需的选择性和抛光率，现已发现最适宜的表面积和填充量将随特定的抛光淤浆所选择的细金属氧化物粒子、粒子的结晶度和相态而变化。在一个需要高度选择性的实施方案中，小于12％(重量)的具有约70～170m2/g的表面积的氧化铝粒子的固体填充量是优选的。对于表面积较低，即小于70m2/g，氧化铝粒子的固体填充量小于7％是优选的。类似地当需要低选择性时，业已发现当细金属氧化物粒子是热解法二氧化硅时，表面积为40～250m2/g的粒子应以约0.5％～20％(重量)存在。
本发明的金属氧化物粒子为高纯度的并具有小于约1.0微米的聚集粒径分布以避免抛光过程中的擦痕、凹痕、裂痕和其它表面缺陷。举例来说，图2和3分别示出了对于热解法氧化铝和二氧化硅的本发明的金属氧化物粒子的聚集粒径分布。高纯度的意思是总杂质含量通常小于1％，并优选小于0.01％(即100ppm)。杂质的来源通常包括原料杂质和痕量的加工污染物。粒子的聚集粒径指熔融初级粒子(单个的熔融球体)的枝状的、三维链的测量。应注意的是尽管通常认为术语“粒子”“初级粒子”和“聚集粒子”可以互换，但这种引证是不准确的和使人误解的。例如，“粒径”的通常意义实际上是“聚集粒子或聚集体”而不是“初级粒子”的平均最大尺寸。因此，对本领域普通技术人员来说，对聚集体和初级粒子进行仔细的评价和辨别是重要的。
本发明中确定聚集粒径分布的方法是透射电子显微镜(TEM)。该方法中，金属氧化物粒子样品分散在液体介质中直到附聚物已转换为聚集体。然后调节其浓度直到分散的聚集体在TEM栅格示出。然后使用由KontronInstruments(Everett,MA)制备的影像分析系统使栅格上的多个场成像并贮存在录像磁带上直到成像并贮存了1000以上的聚集体。然后将贮存的图像送入带有构架咬合取样器(frame-grabber board)的影像分析计算机以进一步处理，如，清除偏差、调节背景和规范化图像。测量双场中的单个聚集体的多个粒子参数，如聚集粒径，采用ASTM D3849-89中所述的已知技术测定。测量数据可以单个记录或以统计的或频率分布的形式记录。
为了使本发明的抛光淤浆成为常规淤浆的有效替代物，重要的是金属氧化物粒子的聚集体均匀分布在稳定的含水介质中。均匀分散的意思是聚集体是分离的并良好地分散在整个介质中。稳定的意思通常是聚集体不会再附聚及沉积(即，形成硬的、稠密的沉淀物)。在一个优选的实施方案中，聚集体保持稳定至少约3个月。已进一步发现，达到淤浆稳定性的重要之处在于本发明的金属氧化物粒子，除具有小于1.0微米的聚集粒径分布外，还具有小于约0.4微米的平均聚集直径，并且本发明的粒子还具有一个足以排斥和克服粒子间的范德华吸引力的力。平均聚集直径指当使用TEM影像分析时的平均等效球体直径，即，基于聚集体的横截面积。力是指金属氧化物粒子的表面位势或水合力必须足以排斥和克服粒子间的范德华吸引力。
在一个优选的实施例中，金属氧化物粒子的平均聚集粒径分布小于0.3微米并且其最大Z电势大于±10毫伏。Z电势(ζ)是在液体中在剪切平面和超出双电层的范围之外的液体主体间测量的电位差。如图4所示，Z电势取决于含水介质的pH。对于给定的金属氧化物粒子组合物来说，等电点定义为Z电势等于零处的pH。当pH从等电点持续增加或减小时，表面正电荷或负电荷分别增加。当pH持续增加或减小时，表面电荷将到达一渐近线，该渐近线被称为最大Z电位。应注意的是，最大Z电位和等电点是金属氧化物组合物的函数，最大Z电位可以受加入到含水介质中的盐的影响。有关更详细的Z电位的讨论，请看R.J.Hunter，胶体科学中的Z电位(Zeta Potential inColloid Science)(Academic Press 1981)。
尽管不能直接测量Z电位，但Z电位可以通过多种已知技术(如电泳、动电声振幅)和分析技术(包括超声振动电位)测量。本发明中，所指的Z电位通过测量动电声振幅而确定，采用Matec MBS-8000仪器进行(从Matec应用科学公司，Hopkington,MA买到)。
在另一个实施方案中，氧化组分可以被加入到抛光淤浆中以将金属层氧化成其相应的氧化物。例如，在本发明中，用氧化组分将金属层氧化成其相应的氧化物，如将钨氧化成氧化钨。对层进行机械抛光以将氧化钨从层上除去。尽管可使用多种氧化组分，优选的组分包括氧化性金属盐、氧化性金属络合物、铁盐如硝酸盐、硫酸盐、EDTA、柠檬酸盐、铁氰化钾等、铝盐、钠盐、钾盐、铵盐、季铵盐、鏻盐、过氧化物、氯酸盐、过氯酸盐、高锰酸盐、过硫酸盐及其混合物。氧化组分通常以足以保证金属层的快速氧化，同时平衡淤浆中的机械和化学抛光组分的量存在于淤浆中。另外，现已发现，氧化组分的浓度和抛光淤浆的胶体稳定性之间存在着重要的关系。因此，氧化组分通常以约0.5％～15％(重量)，优选以1％～7％(重量)的范围存在于淤浆中。
为了进一步稳定含有氧化组分的抛光淤浆氧化组分的抗沉淀、絮凝和分解的能力，可以使用多种添加剂，如表面活性剂、聚合物稳定剂或其它的表面活性分散剂。用于本发明中的适合的表面活性剂的许多例子公开在，如kirk-Othmer，化工百科全书，第三版，第22卷(John Wiley & Sons,1983)；Sislet & Wood，表面活性剂百科全书(化工出版公司，1964)以及可得到的生产文献，包括如McCutcheon′s Emulsifiers & Detergents，北美和国际版本(McCutcheon Division,MC出版公司1991)；Ash，表面活性剂的百科全书简本(化学出版有限公司，1989)；Ash，每个化工技师想知道的是有关乳化剂和润湿剂(What Every Chemical Technologist Wants to Knowabout...Emulsifier and Wetting Agents),Ⅰ卷(化工出版有限公司，1988)，Tadros，表面活性剂(Academic Press,1984)；Napper，胶体分散的聚合物稳定(Polymeric Stabilization of Colloidal Dispersion)(Academic Press,1983)；以及Rosen，表面活性剂和界面现象(Surfactants & Interfacial Phenomena)，第2版(John Wiley & Sons,1989)，将上面所有这些文献引入本文作参考。在一个实施方案中，发现由聚二甲基硅氧烷和聚氧化烯醚的共聚物构成的表面活性剂是合适的。
通常，本发明中所用的添加剂(如表面活性剂)的量应足以达到淤浆的有效立体稳定性，并通常根据所选的特定表面活性剂和金属氧化物粒子的表面性质而变化。例如，如果所选的表面活性剂的用量不足，则它对稳定性没有或影响不大。另一方面，过多的表面活性剂将导致淤浆中不需要的起泡和/或絮凝。因此，添加剂(如表面活性剂)通常以约0.001％～10％(重量)存在。此外，也可以采用已知技术将添加剂直接加入到淤浆中或处理在金属氧化物粒子表面上。在另一个例子中，调整添加剂的量以达到抛光淤浆中所需的浓度。
本发明的金属氧化物粒子通常是沉淀的氧化铝、热解法二氧化硅或热解法氧化铝并优选是热解法二氧化硅或热解法氧化铝。热解法二氧化硅及氧化铝的制备是有许多文献记录的方法，包括合适的原料蒸气，如SiCl4或AlCl3,在H2和O2的火焰中的水解。大致呈球形的熔融粒子在燃烧过程中形成，其直径通过工艺参数而变化。这些热解法二氧化硅或氧化铝的熔融球体，通常称为初级粒子，在其接触点进行碰撞彼此互相融合形成枝状的、三维链状的聚集体。需要打开聚集体的力是相当大的且通常认为是不可逆的。在冷却和收集期间，聚集体进行进一步碰撞而导致一些机械缠绕以形成附聚体。附聚体被认为是通过范德华力松散地结合在一起，并且通过在适宜的介质中的适当分散可以是可逆的，即去附聚化。
沉淀的金属氧化物粒子可以使用常规的技术制备并且通常是在高盐含量、酸或其它凝结剂的影响下从含水介质中所需的粒子的凝结而形成。粒子通过本领域普通技术人员已知的常规技术进行过滤、洗涤、干燥并从其它反应产物的剩余物中分离。
一旦制备完，将金属氧化物缓慢加入到去离子水中以形成胶体分散液。使用常规技术使分散液进行高剪切混合而制备淤浆。从等电点开始调整淤浆的pH以最大化胶体的稳定性。本发明的抛光淤浆可以用作一单元系统(onepackage system)(在稳定的含水介质中金属氧化物粒子和氧化组分，如果需要)或两单元系统(第一单元由含水介质中的金属氧化物粒子构成，第二单元由氧化组分构成)，采用适宜用在所需的晶片金属层的标准抛光设备进行。当在特定的金属氧化物粒子存在下氧化组分随时间分解或水解时，采用两单元系统。在两单元系统中，可以恰好在抛光前将氧化组分加入到淤浆中。
业已发现，本发明的抛光淤浆可以以所需的抛光率提供金属层有效的抛光，同时减少了表面缺陷和缺点。下面对本发明的淤浆进行了非限制性的举例。
实施例1
制备两种抛光淤浆。第一种淤浆由3％重量的热解法氧化铝、5％重量的硝酸铁及剩余重量的去离子水组成。第二种淤浆由3％重量的热解法二氧化硅、5％重量的硝酸铁和剩余重量的去离子水组成。两种淤浆的其它性质示于表Ⅰ。用这两种淤浆对厚度约7500的钨层进行化学-机械抛光。抛光条件和性能结果示于表Ⅱ。
                         表Ⅰ淤浆基         表面积     聚集粒径    最大Z电位    相态
            (m2/g)      (nm)         (mV)热解法氧化铝      55         86          ＞+30      80％γ热解法二氧化硅    90         109         ＞+12     非晶态
                           表Ⅱ淤浆基     压力    流动速度  平面速度  锭子速度  抛光速率   选择性1 质量2
    (磅/英寸2) (ml/分钟) (转/分)   (转/分)   (/分)热解法      5         200       50        50       3000     110∶1    高氧化铝热解法      5         200       50        50       2000     10∶1     高二氧化硅
(注1．热氧化物；注2．高=小于10缺陷/晶片)
从表Ⅱ可以看出，并进一步示于图5中，本发明的两种淤浆在达到合格的抛光速率和高质量的晶片表面均是有效的。而且，可以看出金属氧化物粒子的组成及其相态对钨层的抛光速率和选择性(即钨和热氧化物之间的抛光速率比)有影响。结果是，钨层抛光所选用的具体金属氧化物将取决于所需的选择性和抛光速率。实施例2
为了对比，制备含有8％重量的工业氧化铝、5％重量的硝酸铁和剩余重量的去离子水的常规淤浆。用该淤浆对厚度约7500A的钨层进行化学机械抛光。在与实施例1类似的抛光条件下，含工业氧化铝的淤浆的抛光速率为750/分钟，并且晶片质量差。用含工业氧化铝的淤浆所得到的抛光速率对于大多数抛光用途是不合格的。
实施例3
制备五种抛光淤浆以研究粒子结构和固含量对热解法氧化铝淤浆的抛光性能的影响。制备含有8％重量的热解法氧化铝、5％重量的硝酸铁和剩余重量的去离子水的第一、第二和第三种淤浆以检查在侵蚀性的抛光条件下，即高压、高平面速度(table speed)、高固体填充量下粒子的结构和结晶性的影响。制备含有3％重量热解法氧化铝、5％重量硝酸铁和剩余重量的去离子水的第四和第五淤浆以检查在较低的侵蚀性抛光条件下，即低压、低平面速度和低固体填充量下粒子结构和结晶性的影响。淤浆的其它性能示于表Ⅲ中。用五种淤浆来对厚度约7500的钨层进行化学机械抛光。抛光条件和性能结果示于表Ⅳ中。
                    表Ⅲ
淤浆    表面积    聚集粒径    最大Z电位    相态
        (m2/g)      (nm)        (mV)
1        55          86         +20-35     80％γ
2        85          88         ＞+30      40％γ
3        100         87         ＞+20      20％γ
4        55          86         ＞+30      80％γ
5        100         87         ＞+20      20％γ
                      表Ⅳ淤浆   压力    流动速度 平面速度 锭子速度 抛光速率  选择性1 质量2
(磅/英寸2) (ml/分钟) (转/分)  (转/分) (/分)1       9         200      100      25     4850     50∶1    低2       9         200      100      25     3900     110∶1   低3       9         200      100      25     3700      NA      高4       6         200      50       50     3100      NA      高5       6         200      50       50     600       NA      高
(注1．热氧化物；注2．高=小于10缺陷/晶片；低=大于100缺陷/晶片)
在淤浆1-3的侵蚀性抛光条件下，业已发现热解法氧化铝粒子的相态和结构(即表面积)对选择性(即钨和热氧化物的抛光速率比)和表面质量有显著的影响，而对抛光速率的影响不太显著，如表Ⅳ所示，并进一步在图6中作了描述。在淤浆4和5的较低侵蚀性条件下，相态和结构对抛光速率和表面质量有显著的影响。例如，用淤浆3(8％填充量)、4(3％填充量)和5(3％填充量)抛光可产生质量高的晶片。但是，对高表面积的氧化铝需要较高的固体填充量以获得合适的抛光速率。另一方面，淤浆1(8％填充量)和2(8％填充量)，尽管获得很高的抛光速率，但晶片表面质量差。尽管未被完全理解，但重要的是认识到，如本文所说明的，淤浆的组成和细金属氧化物粒子的结构(即表面积、聚集尺寸和直径、结晶度和结晶相)的相互关系对得到有效的抛光淤浆是至关重要的。
实施例4
制备含有8％重量的热解法二氧化硅、5％重量的硝酸铁和剩余重量的去离子水的抛光淤浆。淤浆的其它性质示于表Ⅴ。用该淤浆对厚度约7500A的铝层进行化学机械抛光。抛光条件和性能结果示于表Ⅵ。
                        表Ⅴ粒子组成        表面积(m2/g) 聚集粒径(纳米) 最大Z电位(毫伏)  相态热解法二氧化硅      90            109              -+12        非晶态
                      表Ⅵ淤浆       压力     流动速度   平面速度 锭子速度 抛光速率   选择性1 质量2
    (磅/英寸2)(ml/分钟)  (转/分)  (转/分)  (/分)热解法二    9        200       50        25       2932      80∶1   高氧化硅
(注1．热氧化物；注2．高=小于10缺陷/晶片)
如表Ⅵ所示并进一步示出在图7中，本发明的抛光淤浆在得到对铝层和晶片的合格的抛光速率和高的表面质量是有效的。
实施例5
制备两种淤浆来说明聚集粒径分布和最大Z电位对胶体稳定性的影响。第一种淤浆含有8％重量的本发明所述的热解法氧化铝、5％重量的硝酸铁和剩余重量的去离子水。第二种淤浆含有8％重量的市购的商标名为UltraloxM100的沉淀的氧化铝。淤浆的其它性能列于表Ⅶ。
                           表Ⅶ
淤浆   表面积(m2/g)  平均聚集直径(纳米)  最大Z电位(毫伏)
1         55             94.3                +32
2         NA             450                 +10
表8示出了各种淤浆中金属氧化物粒子经过24小时产生沉淀的量。采用由Byk Gardner,Inc制造的Dynometer仪测量粒子。可以注意到，本发明的淤浆1中未检测到沉淀。另一方面，市购的氧化铝的淤浆2在24小时期间沉淀持续增多。到24小时时，氧化铝主体已沉淀出来而形成稠密的硬饼。在没有另外的步骤下此时使用淤浆2来再分散饼块并稳定淤浆，淤浆2获得较低的抛光速率并在晶片上产生明显的擦痕，从而产生质量差的晶片。
如本文所描述，业已发现本发明的抛光淤浆特别用在化学机械平面化上以除去不平整的外形、材料层、表面缺陷(包括擦痕、粗糙或污染物粒子如脏物或尘埃)。结果是，使用该淤浆的半导体工艺在表面质量、装置可靠性和产率方面与常规的蚀刻技术相比获得了改进。尽管该细金属氧化物粒子针对于氧化铝和二氧化硅，应理解的是，本文的说明可适用于其它的细金属氧化物粒子(如氧化锗、氧化铈、氧化钛等)。而且，可用金属氧化物粒子来抛光其它的金属表面(如铜和钛)以及底层(如钛、氮化钛和钛钨)。
还应理解的是，本发明不限于本文所列出和描述的具体实施方案，在不偏离本发明的范围和精神下，可作出多种变化和改型。

Claims (39)

1、一种化学机械抛光基片金属层的方法，该方法包括下列步骤：
a)提供一种化学机械抛光淤浆，该淤浆含有均匀分散在含水介质中的高纯氧化铝粒子，该粒子的表面积为约40～430m2/g，聚集粒径分布约小于1.0微米，平均聚集直径小于约0.4微米，并且具有一个足以排斥和克服粒子间范德华力的力，其中所述的淤浆是稳定的；以及
(b)用所述的淤浆对半导体基片上的金属层进行化学机械抛光。
2、权利要求1的方法，其中所述的金属层选自：钨、铝、铜、钛及其合金。
3、权利要求2的方法，其中所述的金属层是钨。
4、权利要求3的方法，其中所述的钨层还含有至少一个底层，该底层选自：钛、氮化钛、钛钨及其混合物。
5、权利要求1的方法，其中所述的粒子以约0.5％～55％的重量存在。
6、权利要求1的方法，其中所述的氧化铝粒子的表面积约小于70m2/g，并且以约小于7％重量的范围存在于所述的淤浆中。
7、权利要求1的方法，其中所述的氧化铝粒子的表面积约70～170m2/g，并且以约小于12％重量的范围存在于所述的淤浆中。
8、权利要求6或7的方法，其中所述的氧化铝是沉淀的氧化铝或热解法氧化铝。
9、权利要求1的方法，其中所述的粒子的最大Z电位约大于±10毫伏。
10、权利要求1的方法，其中所述的淤浆还含有一种氧化组分。
11、权利要求10的方法，其中所述的氧化组分是一种氧化性金属盐。
12、权利要求10的方法，其中所述的氧化组分是一种氧化性金属络合物。
13、权利要求10的方法，其中所述的氧化组分选自：铁盐、铝盐、钠盐、钾盐、铵盐、季铵盐、鏻盐、过氧化物、氯酸盐、高氯酸盐、高锰酸盐、过硫酸盐及其混合物。
14、权利要求1的方法，其中所述的淤浆还含有一种表面活性剂。
15、权利要求14的方法，其中所述的表面活性剂选自：非离子表面活性剂、阴离子表面活性剂、阳离子表面活性剂、两性表面活性剂及其混合物。
16、权利要求14的方法，其中所述的表面活性剂选自：聚烷基硅氧烷、聚芳基硅氧烷、聚氧化烯醚及其混合物和共聚物。
17、一种金属层抛光用的化学机械抛光淤浆，包括：
均匀分散在含水介质中的高纯氧化铝粒子，所述的粒子的表面积约40～430m2/g，聚集粒径分布小于约1.0微米，平均聚集直径小于约0.4微米，并具有一个足以排斥和克服粒子间范德华力的力，其中所述的淤浆是胶体稳定的。
18、权利要求17的淤浆，其中所述的粒子以约0.5％～55％的重量存在。
19、权利要求17的淤浆，其中所述的氧化铝粒子表面积约小于70m2/g，并且以约小于7％重量的范围存在。
20、权利要求17的淤浆，其中所述的氧化铝粒子的表面积约70～170m2/g，并且以约小于12％重量的范围存在于所述的淤浆中。
21、权利要求19或20的淤浆，其中所述的氧化铝是沉淀的氧化铝或热解法氧化铝。
22、权利要求17的淤浆，其中所述的粒子的最大Z电位约大于±10毫伏。
23、权利要求17的淤浆，其中所述的淤浆还含有一种表面活性剂。
24、权利要求23的淤浆，其中所述的表面活性剂选自：非离子表面活性剂、阴离子表面活性剂、阳离子表面活性剂、两性表面活性剂及其混合物。
25、权利要求23的淤浆，其中所述的表面活性剂选自：聚烷基硅氧烷、聚芳基硅氧烷、聚氧化烯醚及其混合物和共聚物。
26、一种金属层抛光用的化学机械抛光淤浆，包括均匀分散在含水介质中的高纯氧化铝粒子和一种氧化组分，所述的粒子的表面积约40～430m2/g，聚集粒径分布小于约1.0微米，平均聚集直径小于约0.4微米，并且具有一个足以排斥和克服粒子间范德华力的力，其中所述的淤浆是胶体稳定的。
27、权利要求26的淤浆，其中所述的粒子以约0.5％～55％(重量)存在。
28、权利要求26的淤浆，其中所述的氧化铝粒子表面积约小于70m2/g，并且以约小于7％的重量存在于所述的淤浆中。
29、权利要求26的淤浆，其中所述的氧化铝粒子的表面积约70～170m2/g，并且以约小于12％重量的范围存在于所述的淤浆中。
30、权利要求28或29的淤浆，其中所述的氧化铝是沉淀的氧化铝或热解法氧化铝。
31、权利要求26的淤浆，其中所述的粒子的最大Z电位约大于±10毫伏。
32、权利要求26的淤浆，其中所述的氧化组分是一种氧化性金属盐。
33、权利要求26的淤浆，其中所述的氧化组分是一种氧化性金属络合物。
34、权利要求26的淤浆，其中所述的氧化组分选自：铁盐、铝盐、钠盐、钾盐、铵盐、季铵盐、鏻盐、过氧化物、氯酸盐、高氯酸盐、高锰酸盐、过硫酸盐及其混合物。
35、权利要求26的淤浆，其中所述的淤浆还进一步包括一种添加剂，所述的添加剂的量应足以防止氧化组分的分解，并维持淤浆的胶体稳定性。
36、权利要求35的淤浆，其中所述的添加剂为表面活性剂。
37、权利要求35的淤浆，其中所述的表面活性剂选自：非离子表面活性剂、阴离子表面活性剂、阳离子表面活性剂、两性表面活性剂及其混合物。
38、权利要求36的淤浆，其中所述的表面活性剂选自：聚烷基硅氧烷、聚芳基硅氧烷、聚氧化烯醚及其混合物和共聚物。
39、权利要求26的淤浆，其中所述的氧化铝粒子是含有至少50％γ-相的热解法二氧化铝，并且所述的氧化组分是硝酸铁。
CN95196473A 1994-10-06 1995-09-01 金属层用的化学机械抛光淤浆 Expired - Lifetime CN1074035C (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102027100A (zh) * 2008-04-28 2011-04-20 Ppt研究公司 线切割设备用的切割和润滑组合物

Families Citing this family (467)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6546939B1 (en) 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US6258137B1 (en) 1992-02-05 2001-07-10 Saint-Gobain Industrial Ceramics, Inc. CMP products
FR2722511B1 (fr) * 1994-07-15 1999-04-02 Ontrak Systems Inc Procede pour enlever les metaux dans un dispositif de recurage
EP0697730B1 (en) * 1994-08-05 1999-11-24 International Business Machines Corporation Method of forming an Al-Ge alloy with WGe polishing stop
JP3438410B2 (ja) * 1995-05-26 2003-08-18 ソニー株式会社 化学機械研磨用スラリーおよびその製造方法ならびにこれを用いた研磨方法
US6046110A (en) * 1995-06-08 2000-04-04 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing a semiconductor device
US5693239A (en) * 1995-10-10 1997-12-02 Rodel, Inc. Polishing slurries comprising two abrasive components and methods for their use
US5726099A (en) * 1995-11-07 1998-03-10 International Business Machines Corporation Method of chemically mechanically polishing an electronic component using a non-selective ammonium persulfate slurry
EP0773270B1 (en) * 1995-11-10 2001-01-24 Tokuyama Corporation Polishing slurries and a process for the production thereof
JPH09139368A (ja) * 1995-11-14 1997-05-27 Sony Corp 化学的機械研磨方法
US5885899A (en) * 1995-11-14 1999-03-23 International Business Machines Corporation Method of chemically mechanically polishing an electronic component using a non-selective ammonium hydroxide slurry
EP0779655A3 (en) * 1995-12-14 1997-07-16 International Business Machines Corporation A method of chemically-mechanically polishing an electronic component
US5840629A (en) * 1995-12-14 1998-11-24 Sematech, Inc. Copper chemical mechanical polishing slurry utilizing a chromate oxidant
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
EP0786504A3 (en) * 1996-01-29 1998-05-20 Fujimi Incorporated Polishing composition
US5647952A (en) * 1996-04-01 1997-07-15 Industrial Technology Research Institute Chemical/mechanical polish (CMP) endpoint method
US6022807A (en) * 1996-04-24 2000-02-08 Micro Processing Technology, Inc. Method for fabricating an integrated circuit
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US5866031A (en) * 1996-06-19 1999-02-02 Sematech, Inc. Slurry formulation for chemical mechanical polishing of metals
US5863838A (en) * 1996-07-22 1999-01-26 Motorola, Inc. Method for chemically-mechanically polishing a metal layer
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
US20040140288A1 (en) * 1996-07-25 2004-07-22 Bakul Patel Wet etch of titanium-tungsten film
WO1998004646A1 (en) 1996-07-25 1998-02-05 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US5846398A (en) * 1996-08-23 1998-12-08 Sematech, Inc. CMP slurry measurement and control technique
KR19980019046A (ko) * 1996-08-29 1998-06-05 고사이 아키오 연마용 조성물 및 이의 용도(Abrasive composition and use of the same)
US6039891A (en) * 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US6033596A (en) * 1996-09-24 2000-03-07 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
KR100775228B1 (ko) 1996-09-30 2007-11-12 히다치 가세고교 가부시끼가이샤 산화세륨 연마제 및 기판의 연마법
JPH10154672A (ja) * 1996-09-30 1998-06-09 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
US5972792A (en) * 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
US5773364A (en) * 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
US6336945B1 (en) * 1996-11-14 2002-01-08 Kao Corporation Abrasive composition for the base of magnetic recording medium and process for producing the base by using the same
WO1998023697A1 (en) * 1996-11-26 1998-06-04 Cabot Corporation Composition and method for polishing rigid disks
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
SG68005A1 (en) * 1996-12-02 1999-10-19 Fujimi Inc Polishing composition
JPH10172969A (ja) * 1996-12-06 1998-06-26 Nec Corp 半導体装置の製造方法
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6309560B1 (en) 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5895550A (en) 1996-12-16 1999-04-20 Micron Technology, Inc. Ultrasonic processing of chemical mechanical polishing slurries
US5735963A (en) * 1996-12-17 1998-04-07 Lucent Technologies Inc. Method of polishing
US6602439B1 (en) * 1997-02-24 2003-08-05 Superior Micropowders, Llc Chemical-mechanical planarization slurries and powders and methods for using same
US5916855A (en) * 1997-03-26 1999-06-29 Advanced Micro Devices, Inc. Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films
US6322600B1 (en) 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
US6194317B1 (en) 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
US6001269A (en) * 1997-05-20 1999-12-14 Rodel, Inc. Method for polishing a composite comprising an insulator, a metal, and titanium
US6290735B1 (en) 1997-10-31 2001-09-18 Nanogram Corporation Abrasive particles for surface polishing
US7384680B2 (en) 1997-07-21 2008-06-10 Nanogram Corporation Nanoparticle-based power coatings and corresponding structures
US20060147369A1 (en) * 1997-07-21 2006-07-06 Neophotonics Corporation Nanoparticle production and corresponding structures
US6726990B1 (en) 1998-05-27 2004-04-27 Nanogram Corporation Silicon oxide particles
US20090255189A1 (en) * 1998-08-19 2009-10-15 Nanogram Corporation Aluminum oxide particles
US6099798A (en) * 1997-10-31 2000-08-08 Nanogram Corp. Ultraviolet light block and photocatalytic materials
US20090075083A1 (en) * 1997-07-21 2009-03-19 Nanogram Corporation Nanoparticle production and corresponding structures
US6093649A (en) 1998-08-07 2000-07-25 Rodel Holdings, Inc. Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto
KR19990023544A (ko) * 1997-08-19 1999-03-25 마쯔모또 에이찌 무기 입자의 수성 분산체와 그의 제조 방법
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6008123A (en) * 1997-11-04 1999-12-28 Lucent Technologies Inc. Method for using a hardmask to form an opening in a semiconductor substrate
US6117784A (en) * 1997-11-12 2000-09-12 International Business Machines Corporation Process for integrated circuit wiring
US5976928A (en) * 1997-11-20 1999-11-02 Advanced Technology Materials, Inc. Chemical mechanical polishing of FeRAM capacitors
US6017463A (en) * 1997-11-21 2000-01-25 Advanced Micro Devices, Inc. Point of use mixing for LI/plug tungsten polishing slurry to improve existing slurry
US5985748A (en) * 1997-12-01 1999-11-16 Motorola, Inc. Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process
JPH11181403A (ja) 1997-12-18 1999-07-06 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
US6294105B1 (en) 1997-12-23 2001-09-25 International Business Machines Corporation Chemical mechanical polishing slurry and method for polishing metal/oxide layers
US6284151B1 (en) * 1997-12-23 2001-09-04 International Business Machines Corporation Chemical mechanical polishing slurry for tungsten
US6153043A (en) 1998-02-06 2000-11-28 International Business Machines Corporation Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing
US6143662A (en) * 1998-02-18 2000-11-07 Rodel Holdings, Inc. Chemical mechanical polishing composition and method of polishing a substrate
TW419518B (en) * 1998-02-20 2001-01-21 Ind Tech Res Inst Non-Newtonian-fluid-behaviored formulation
JP3147072B2 (ja) * 1998-02-26 2001-03-19 日本電気株式会社 半導体装置の製造方法
US6432828B2 (en) 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6475407B2 (en) 1998-05-19 2002-11-05 Showa Denko K.K. Composition for polishing metal on semiconductor wafer and method of using same
US6083838A (en) * 1998-05-20 2000-07-04 Lucent Technologies Inc. Method of planarizing a surface on a semiconductor wafer
US6435947B2 (en) 1998-05-26 2002-08-20 Cabot Microelectronics Corporation CMP polishing pad including a solid catalyst
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
US5928962A (en) * 1998-06-01 1999-07-27 Motorola, Inc. Process for forming a semiconductor device
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6217416B1 (en) 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
US6533832B2 (en) * 1998-06-26 2003-03-18 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6220934B1 (en) 1998-07-23 2001-04-24 Micron Technology, Inc. Method for controlling pH during planarization and cleaning of microelectronic substrates
JP2000040679A (ja) * 1998-07-24 2000-02-08 Hitachi Ltd 半導体集積回路装置の製造方法
TW512170B (en) * 1998-07-24 2002-12-01 Ibm Aqueous slurry composition and method for polishing a surface using the same
US6124207A (en) * 1998-08-31 2000-09-26 Micron Technology, Inc. Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries
US6468909B1 (en) * 1998-09-03 2002-10-22 Micron Technology, Inc. Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers and methods of using such compositions
US6572453B1 (en) 1998-09-29 2003-06-03 Applied Materials, Inc. Multi-fluid polishing process
EP1155092A1 (en) * 1998-10-21 2001-11-21 W.R. Grace & Co.-Conn. Slurries of abrasive inorganic oxide particles and method for adjusting the abrasiveness of the particles
US6447693B1 (en) 1998-10-21 2002-09-10 W. R. Grace & Co.-Conn. Slurries of abrasive inorganic oxide particles and method for polishing copper containing surfaces
DE69942615D1 (de) 1998-10-23 2010-09-02 Fujifilm Electronic Materials Eine chemisch-mechanisch polierende aufschlämmung, eine beschleunigerlösung enthaltend
SG99289A1 (en) 1998-10-23 2003-10-27 Ibm Chemical-mechanical planarization of metallurgy
US6186865B1 (en) 1998-10-29 2001-02-13 Lam Research Corporation Apparatus and method for performing end point detection on a linear planarization tool
US6325706B1 (en) * 1998-10-29 2001-12-04 Lam Research Corporation Use of zeta potential during chemical mechanical polishing for end point detection
US6863593B1 (en) * 1998-11-02 2005-03-08 Applied Materials, Inc. Chemical mechanical polishing a substrate having a filler layer and a stop layer
FR2785614B1 (fr) 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
US6206756B1 (en) 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6276996B1 (en) 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6395194B1 (en) 1998-12-18 2002-05-28 Intersurface Dynamics Inc. Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same
EP1150341A4 (en) * 1998-12-28 2005-06-08 Hitachi Chemical Co Ltd MATERIALS FOR METAL POLLING LIQUID, METAL POLISHING LIQUID, THEIR PRODUCTION AND POLISHING METHOD
JP4428473B2 (ja) * 1999-01-18 2010-03-10 株式会社東芝 気相法無機酸化物粒子の含水固体状物質及び研磨用スラリーの製造方法
SG108221A1 (en) * 1999-03-15 2005-01-28 Tokyo Magnetic Printing Free abrasive slurry compositions and a grinding method using the same
KR100447552B1 (ko) * 1999-03-18 2004-09-08 가부시끼가이샤 도시바 수계 분산체 및 반도체 장치의 제조에 사용하는 화학 기계연마용 수계 분산체 및 반도체 장치의 제조 방법 및 매립배선의 형성 방법
US6407000B1 (en) * 1999-04-09 2002-06-18 Micron Technology, Inc. Method and apparatuses for making and using bi-modal abrasive slurries for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies
US6599836B1 (en) * 1999-04-09 2003-07-29 Micron Technology, Inc. Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
JP4644323B2 (ja) * 1999-04-28 2011-03-02 Ａｇｃセイミケミカル株式会社 有機アルカリを含有する半導体用研磨剤
US6375693B1 (en) 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
US6251150B1 (en) 1999-05-27 2001-06-26 Ekc Technology, Inc. Slurry composition and method of chemical mechanical polishing using same
US6238450B1 (en) 1999-06-16 2001-05-29 Saint-Gobain Industrial Ceramics, Inc. Ceria powder
US6387810B2 (en) * 1999-06-28 2002-05-14 International Business Machines Corporation Method for homogenizing device parameters through photoresist planarization
EP1177068A4 (en) 1999-07-03 2004-06-16 Rodel Inc IMPROVED CHEMICAL-MECHANICAL POLISHING SLUDGE FOR METAL
US6573173B2 (en) 1999-07-13 2003-06-03 Motorola, Inc. Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
US6274478B1 (en) 1999-07-13 2001-08-14 Motorola, Inc. Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
US6602111B1 (en) * 1999-07-16 2003-08-05 Seimi Chemical Co., Ltd. Abrasive
US6436302B1 (en) 1999-08-23 2002-08-20 Applied Materials, Inc. Post CU CMP polishing for reduced defects
US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
JP4075247B2 (ja) 1999-09-30 2008-04-16 Ｊｓｒ株式会社 化学機械研磨用水系分散体
US6887559B1 (en) 1999-10-01 2005-05-03 Cabot Corporation Recording medium
EP2096208B1 (en) 1999-10-01 2011-11-30 Cabot Corporation Recording medium
US6509269B2 (en) * 1999-10-19 2003-01-21 Applied Materials, Inc. Elimination of pad glazing for Al CMP
US6347978B1 (en) * 1999-10-22 2002-02-19 Cabot Microelectronics Corporation Composition and method for polishing rigid disks
JP2001118815A (ja) * 1999-10-22 2001-04-27 Speedfam Co Ltd 半導体ウェーハエッジ研磨用研磨組成物及び研磨加工方法
CN1196760C (zh) * 1999-12-17 2005-04-13 卡伯特微电子公司 抛光或平滑化基体的方法
US7067105B2 (en) * 1999-12-27 2006-06-27 Showa Denko K.K. Alumina particles, production process thereof, composition comprising the particles and alumina slurry for polishing
CN1294081C (zh) * 1999-12-27 2007-01-10 昭和电工株式会社 氧化铝粒子、其制造方法、含有该粒子的组合物和研磨用氧化铝料浆
JP3490038B2 (ja) * 1999-12-28 2004-01-26 Ｎｅｃエレクトロニクス株式会社 金属配線形成方法
EP1118647A1 (en) * 2000-01-18 2001-07-25 Praxair S.T. Technology, Inc. Polishing slurry
US6372632B1 (en) * 2000-01-24 2002-04-16 Taiwan Semiconductor Manufacturing Company Method to eliminate dishing of copper interconnects by the use of a sacrificial oxide layer
US6461958B1 (en) 2000-02-04 2002-10-08 Seagate Technology Llc Polishing memory disk substrates with reclaim slurry
TWI296006B (zh) 2000-02-09 2008-04-21 Jsr Corp
US6534327B2 (en) 2000-04-13 2003-03-18 Texas Instruments Incorporated Method for reworking metal layers on integrated circuit bond pads
US6646348B1 (en) * 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
US6652357B1 (en) 2000-09-22 2003-11-25 Lam Research Corporation Methods for controlling retaining ring and wafer head tilt for chemical mechanical polishing
US7481695B2 (en) 2000-08-22 2009-01-27 Lam Research Corporation Polishing apparatus and methods having high processing workload for controlling polishing pressure applied by polishing head
US6640155B2 (en) 2000-08-22 2003-10-28 Lam Research Corporation Chemical mechanical polishing apparatus and methods with central control of polishing pressure applied by polishing head
US6585572B1 (en) 2000-08-22 2003-07-01 Lam Research Corporation Subaperture chemical mechanical polishing system
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
US6471566B1 (en) 2000-09-18 2002-10-29 Lam Research Corporation Sacrificial retaining ring CMP system and methods for implementing the same
US6443815B1 (en) 2000-09-22 2002-09-03 Lam Research Corporation Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing
DE10048477B4 (de) 2000-09-29 2008-07-03 Qimonda Ag Verfahren zum chemisch-mechanischen Polieren von Schichten aus Metallen der Platingruppe
US6787061B1 (en) * 2000-11-16 2004-09-07 Intel Corporation Copper polish slurry for reduced interlayer dielectric erosion and method of using same
JP2004526308A (ja) * 2001-01-16 2004-08-26 キャボット マイクロエレクトロニクス コーポレイション シュウ酸アンモニウムを含有する研磨系及び方法
US6383065B1 (en) 2001-01-22 2002-05-07 Cabot Microelectronics Corporation Catalytic reactive pad for metal CMP
US6627546B2 (en) 2001-06-29 2003-09-30 Ashland Inc. Process for removing contaminant from a surface and composition useful therefor
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
JP4954398B2 (ja) 2001-08-09 2012-06-13 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US6953389B2 (en) * 2001-08-09 2005-10-11 Cheil Industries, Inc. Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
US6692546B2 (en) 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US7029373B2 (en) * 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6638326B2 (en) * 2001-09-25 2003-10-28 Ekc Technology, Inc. Compositions for chemical mechanical planarization of tantalum and tantalum nitride
US7416680B2 (en) * 2001-10-12 2008-08-26 International Business Machines Corporation Self-cleaning colloidal slurry composition and process for finishing a surface of a substrate
US7077880B2 (en) * 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US6705926B2 (en) * 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
TWI276682B (en) * 2001-11-16 2007-03-21 Mitsubishi Chem Corp Substrate surface cleaning liquid mediums and cleaning method
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US6866792B2 (en) * 2001-12-12 2005-03-15 Ekc Technology, Inc. Compositions for chemical mechanical planarization of copper
US7121926B2 (en) * 2001-12-21 2006-10-17 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article
US20030119316A1 (en) * 2001-12-21 2003-06-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using oxidizing agents
US6730592B2 (en) * 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US6884723B2 (en) 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
US7049237B2 (en) * 2001-12-21 2006-05-23 Micron Technology, Inc. Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases
US6830503B1 (en) 2002-01-11 2004-12-14 Cabot Microelectronics Corporation Catalyst/oxidizer-based CMP system for organic polymer films
US20030136759A1 (en) * 2002-01-18 2003-07-24 Cabot Microelectronics Corp. Microlens array fabrication using CMP
US7004819B2 (en) 2002-01-18 2006-02-28 Cabot Microelectronics Corporation CMP systems and methods utilizing amine-containing polymers
US7097541B2 (en) 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
US6527622B1 (en) 2002-01-22 2003-03-04 Cabot Microelectronics Corporation CMP method for noble metals
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US20030139047A1 (en) * 2002-01-24 2003-07-24 Thomas Terence M. Metal polishing slurry having a static etch inhibitor and method of formulation
US7524346B2 (en) * 2002-01-25 2009-04-28 Dupont Air Products Nanomaterials Llc Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US6884729B2 (en) * 2002-02-11 2005-04-26 Cabot Microelectronics Corporation Global planarization method
US7513920B2 (en) * 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
US6776810B1 (en) 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
WO2003075332A1 (fr) * 2002-03-04 2003-09-12 Fujimi Incorporated Composition de polissage et creation d'une structure en fil
US6682575B2 (en) 2002-03-05 2004-01-27 Cabot Microelectronics Corporation Methanol-containing silica-based CMP compositions
US6582279B1 (en) 2002-03-07 2003-06-24 Hitachi Global Storage Technologies Netherlands B.V. Apparatus and method for reclaiming a disk substrate for use in a data storage device
US6853474B2 (en) * 2002-04-04 2005-02-08 Cabot Microelectronics Corporation Process for fabricating optical switches
US7677956B2 (en) 2002-05-10 2010-03-16 Cabot Microelectronics Corporation Compositions and methods for dielectric CMP
KR100560223B1 (ko) * 2002-06-05 2006-03-10 삼성코닝 주식회사 고정도 연마용 금속 산화물 분말 및 이의 제조방법
AU2003238888A1 (en) * 2002-06-05 2003-12-22 Arizona Board Of Regents Abrasive particles to clean semiconductor wafers during chemical mechanical planarization
US7087187B2 (en) * 2002-06-06 2006-08-08 Grumbine Steven K Meta oxide coated carbon black for CMP
US6641630B1 (en) 2002-06-06 2003-11-04 Cabot Microelectronics Corp. CMP compositions containing iodine and an iodine vapor-trapping agent
US6604987B1 (en) 2002-06-06 2003-08-12 Cabot Microelectronics Corporation CMP compositions containing silver salts
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
US7021993B2 (en) * 2002-07-19 2006-04-04 Cabot Microelectronics Corporation Method of polishing a substrate with a polishing system containing conducting polymer
US6811474B2 (en) 2002-07-19 2004-11-02 Cabot Microelectronics Corporation Polishing composition containing conducting polymer
JP4083528B2 (ja) 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物
DE10246756B4 (de) * 2002-10-07 2006-03-16 Novar Gmbh Branderkennungsverfahren und Brandmelder zu dessen Durchführung
US20040092102A1 (en) * 2002-11-12 2004-05-13 Sachem, Inc. Chemical mechanical polishing composition and method
US20040144038A1 (en) * 2002-12-09 2004-07-29 Junaid Ahmed Siddiqui Composition and associated method for oxide chemical mechanical planarization
US6893476B2 (en) 2002-12-09 2005-05-17 Dupont Air Products Nanomaterials Llc Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal
JP2004193495A (ja) * 2002-12-13 2004-07-08 Toshiba Corp 化学的機械的研磨用スラリーおよびこれを用いた半導体装置の製造方法
US20040175942A1 (en) * 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US20040217006A1 (en) * 2003-03-18 2004-11-04 Small Robert J. Residue removers for electrohydrodynamic cleaning of semiconductors
US20040188379A1 (en) * 2003-03-28 2004-09-30 Cabot Microelectronics Corporation Dielectric-in-dielectric damascene process for manufacturing planar waveguides
US8747908B2 (en) 2003-04-09 2014-06-10 Osmose, Inc. Micronized wood preservative formulations
US8637089B2 (en) 2003-04-09 2014-01-28 Osmose, Inc. Micronized wood preservative formulations
EP2345329B1 (en) * 2003-04-09 2019-09-18 Koppers Performance Chemicals Inc. Micronized wood preservative formulations
US7964005B2 (en) * 2003-04-10 2011-06-21 Technion Research & Development Foundation Ltd. Copper CMP slurry composition
JP4971790B2 (ja) 2003-06-17 2012-07-11 オズモウズ，インコーポレーテッド 微粒子状木材保存剤及びその製造方法
KR101123210B1 (ko) * 2003-07-09 2012-03-19 다이니아 케미컬스 오이 화학적 기계적 평탄화용 비-중합성 유기 입자
US6869336B1 (en) * 2003-09-18 2005-03-22 Novellus Systems, Inc. Methods and compositions for chemical mechanical planarization of ruthenium
US6929983B2 (en) 2003-09-30 2005-08-16 Cabot Microelectronics Corporation Method of forming a current controlling device
US7087529B2 (en) * 2003-10-02 2006-08-08 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry and method of planarizing surfaces
US20050074473A1 (en) * 2003-10-07 2005-04-07 Cabot Corporation Soft-focus cosmetic composition comprising fumed alumina
US20050159085A1 (en) * 2003-10-30 2005-07-21 Scott Brandon S. Method of chemically mechanically polishing substrates
US7223156B2 (en) * 2003-11-14 2007-05-29 Amcol International Corporation Method chemical-mechanical polishing and planarizing corundum, GaAs, GaP and GaAs/GaP alloy surfaces
US20050148289A1 (en) * 2004-01-06 2005-07-07 Cabot Microelectronics Corp. Micromachining by chemical mechanical polishing
US7288021B2 (en) * 2004-01-07 2007-10-30 Cabot Microelectronics Corporation Chemical-mechanical polishing of metals in an oxidized form
US7255810B2 (en) * 2004-01-09 2007-08-14 Cabot Microelectronics Corporation Polishing system comprising a highly branched polymer
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
US7584910B2 (en) * 2004-05-04 2009-09-08 Cabot Corporation Method of preparing an aggregate metal oxide particle dispersion having a desired aggregate particle diameter
US20050255251A1 (en) * 2004-05-17 2005-11-17 Hodge Robert L Composition, method of making, and treatment of wood with an injectable wood preservative slurry having biocidal particles
US20050252408A1 (en) 2004-05-17 2005-11-17 Richardson H W Particulate wood preservative and method for producing same
US20060075923A1 (en) * 2004-10-12 2006-04-13 Richardson H W Method of manufacture and treatment of wood with injectable particulate iron oxide
US7316738B2 (en) * 2004-10-08 2008-01-08 Phibro-Tech, Inc. Milled submicron chlorothalonil with narrow particle size distribution, and uses thereof
US20060062926A1 (en) * 2004-05-17 2006-03-23 Richardson H W Use of sub-micron copper salt particles in wood preservation
US7776758B2 (en) * 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7968273B2 (en) * 2004-06-08 2011-06-28 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
FR2872823B1 (fr) * 2004-07-08 2006-10-06 Kemesys Composition de polissage mecano chimique, procede de preparation, et utilisation
US7161247B2 (en) 2004-07-28 2007-01-09 Cabot Microelectronics Corporation Polishing composition for noble metals
US7390748B2 (en) * 2004-08-05 2008-06-24 International Business Machines Corporation Method of forming a polishing inhibiting layer using a slurry having an additive
US6979252B1 (en) 2004-08-10 2005-12-27 Dupont Air Products Nanomaterials Llc Low defectivity product slurry for CMP and associated production method
KR20060016498A (ko) * 2004-08-18 2006-02-22 삼성전자주식회사 슬러리 조성물, 이의 제조 방법 및 이를 이용한 가공물의연마방법
US7153182B1 (en) 2004-09-30 2006-12-26 Lam Research Corporation System and method for in situ characterization and maintenance of polishing pad smoothness in chemical mechanical polishing
US7563383B2 (en) * 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US20060112850A1 (en) 2004-10-14 2006-06-01 Jun Zhang Micronized wood preservative formulations in organic carriers
US8038752B2 (en) * 2004-10-27 2011-10-18 Cabot Microelectronics Corporation Metal ion-containing CMP composition and method for using the same
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7504044B2 (en) 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20060096179A1 (en) * 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
US20060124026A1 (en) * 2004-12-10 2006-06-15 3M Innovative Properties Company Polishing solutions
DE102004061700A1 (de) * 2004-12-22 2006-07-06 Degussa Ag Aluminiumoxidpulver, Dispersion und Beschichtungszusammensetzung
KR20060077353A (ko) * 2004-12-30 2006-07-05 삼성전자주식회사 슬러리 조성물, 이를 이용한 가공물의 연마방법 및 반도체장치의 콘택 형성방법
EP1838795A2 (en) * 2005-01-07 2007-10-03 Dynea Chemicals OY Engineered non-polymeric organic particles for chemical mechanical planarization
CN101180379B (zh) * 2005-03-25 2013-07-24 气体产品与化学公司 用于含有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物
CN1865387A (zh) * 2005-05-17 2006-11-22 安集微电子（上海）有限公司 抛光浆料
WO2006125462A1 (en) * 2005-05-25 2006-11-30 Freescale Semiconductor, Inc Cleaning solution for a semiconductor wafer
US7576361B2 (en) * 2005-08-03 2009-08-18 Aptina Imaging Corporation Backside silicon wafer design reducing image artifacts from infrared radiation
US7803203B2 (en) 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
KR101214060B1 (ko) * 2005-09-26 2012-12-20 플레이너 솔루션즈 엘엘씨 화학적 기계적 연마 용도로 사용되기 위한 초고순도의 콜로이드 실리카
FR2891759B1 (fr) * 2005-10-12 2009-04-10 Kemesys Suspension aqueuse abrasive a base de particules de dioxyde de cerium et de silice pour le polissage de surfaces de materiaux
US8685123B2 (en) * 2005-10-14 2014-04-01 Saint-Gobain Ceramics & Plastics, Inc. Abrasive particulate material, and method of planarizing a workpiece using the abrasive particulate material
US7435162B2 (en) * 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP
US7265055B2 (en) * 2005-10-26 2007-09-04 Cabot Microelectronics Corporation CMP of copper/ruthenium substrates
JP4753710B2 (ja) * 2005-12-22 2011-08-24 花王株式会社 ハードディスク基板用研磨液組成物
US7897061B2 (en) 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
US20070259016A1 (en) * 2006-05-05 2007-11-08 Hodge Robert L Method of treating crops with submicron chlorothalonil
US7368066B2 (en) * 2006-05-31 2008-05-06 Cabot Microelectronics Corporation Gold CMP composition and method
US8759216B2 (en) 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
US7998228B2 (en) * 2006-07-19 2011-08-16 Cabot Microelectronics Corporation Tantalum CMP compositions and methods
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
WO2008023214A1 (en) * 2006-08-23 2008-02-28 Freescale Semiconductor, Inc. Rinse formulation for use in the manufacture of an integrated circuit
JP2008135453A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
JP2008135452A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
US20080148652A1 (en) 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
US20090136785A1 (en) * 2007-01-03 2009-05-28 Nanosys, Inc. Methods for nanopatterning and production of magnetic nanostructures
WO2008085813A2 (en) * 2007-01-03 2008-07-17 Nanosys, Inc, Et Al. Methods for nanopatterning and production of nanostructures
CN101711226A (zh) 2007-01-15 2010-05-19 圣戈本陶瓷及塑料股份有限公司 陶瓷微粒材料及其制备方法
US20080242106A1 (en) * 2007-03-29 2008-10-02 Anuj Sarveshwar Narain CHEMICAL MECHANICAL POLISHING METHOD AND APPARATUS FOR REDUCING MATERIAL RE-DEPOSITION DUE TO pH TRANSITIONS
US20090001339A1 (en) * 2007-06-29 2009-01-01 Tae Young Lee Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same
KR20090002506A (ko) * 2007-06-29 2009-01-09 제일모직주식회사 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법
KR101232585B1 (ko) * 2007-09-21 2013-02-12 캐보트 마이크로일렉트로닉스 코포레이션 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법
KR101232442B1 (ko) * 2007-09-21 2013-02-12 캐보트 마이크로일렉트로닉스 코포레이션 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법
US8427200B2 (en) 2009-04-14 2013-04-23 Monolithic 3D Inc. 3D semiconductor device
US8058137B1 (en) 2009-04-14 2011-11-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8669778B1 (en) 2009-04-14 2014-03-11 Monolithic 3D Inc. Method for design and manufacturing of a 3D semiconductor device
US9509313B2 (en) 2009-04-14 2016-11-29 Monolithic 3D Inc. 3D semiconductor device
US8754533B2 (en) 2009-04-14 2014-06-17 Monolithic 3D Inc. Monolithic three-dimensional semiconductor device and structure
US8378715B2 (en) 2009-04-14 2013-02-19 Monolithic 3D Inc. Method to construct systems
US8373439B2 (en) 2009-04-14 2013-02-12 Monolithic 3D Inc. 3D semiconductor device
US9577642B2 (en) 2009-04-14 2017-02-21 Monolithic 3D Inc. Method to form a 3D semiconductor device
US7986042B2 (en) * 2009-04-14 2011-07-26 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8258810B2 (en) 2010-09-30 2012-09-04 Monolithic 3D Inc. 3D semiconductor device
US8362800B2 (en) 2010-10-13 2013-01-29 Monolithic 3D Inc. 3D semiconductor device including field repairable logics
US8384426B2 (en) 2009-04-14 2013-02-26 Monolithic 3D Inc. Semiconductor device and structure
US8405420B2 (en) 2009-04-14 2013-03-26 Monolithic 3D Inc. System comprising a semiconductor device and structure
US8362482B2 (en) 2009-04-14 2013-01-29 Monolithic 3D Inc. Semiconductor device and structure
US8395191B2 (en) 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
US9711407B2 (en) 2009-04-14 2017-07-18 Monolithic 3D Inc. Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer
US10043781B2 (en) 2009-10-12 2018-08-07 Monolithic 3D Inc. 3D semiconductor device and structure
US11374118B2 (en) 2009-10-12 2022-06-28 Monolithic 3D Inc. Method to form a 3D integrated circuit
US8294159B2 (en) 2009-10-12 2012-10-23 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US9099424B1 (en) 2012-08-10 2015-08-04 Monolithic 3D Inc. Semiconductor system, device and structure with heat removal
US10388863B2 (en) 2009-10-12 2019-08-20 Monolithic 3D Inc. 3D memory device and structure
US8476145B2 (en) 2010-10-13 2013-07-02 Monolithic 3D Inc. Method of fabricating a semiconductor device and structure
US8536023B2 (en) 2010-11-22 2013-09-17 Monolithic 3D Inc. Method of manufacturing a semiconductor device and structure
US8742476B1 (en) 2012-11-27 2014-06-03 Monolithic 3D Inc. Semiconductor device and structure
US10366970B2 (en) 2009-10-12 2019-07-30 Monolithic 3D Inc. 3D semiconductor device and structure
US8450804B2 (en) 2011-03-06 2013-05-28 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US8581349B1 (en) 2011-05-02 2013-11-12 Monolithic 3D Inc. 3D memory semiconductor device and structure
US10354995B2 (en) 2009-10-12 2019-07-16 Monolithic 3D Inc. Semiconductor memory device and structure
US10157909B2 (en) 2009-10-12 2018-12-18 Monolithic 3D Inc. 3D semiconductor device and structure
US11018133B2 (en) 2009-10-12 2021-05-25 Monolithic 3D Inc. 3D integrated circuit
US10910364B2 (en) 2009-10-12 2021-02-02 Monolitaic 3D Inc. 3D semiconductor device
US8026521B1 (en) 2010-10-11 2011-09-27 Monolithic 3D Inc. Semiconductor device and structure
US8298875B1 (en) 2011-03-06 2012-10-30 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8461035B1 (en) 2010-09-30 2013-06-11 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8373230B1 (en) 2010-10-13 2013-02-12 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US9099526B2 (en) 2010-02-16 2015-08-04 Monolithic 3D Inc. Integrated circuit device and structure
US8492886B2 (en) 2010-02-16 2013-07-23 Monolithic 3D Inc 3D integrated circuit with logic
US8541819B1 (en) 2010-12-09 2013-09-24 Monolithic 3D Inc. Semiconductor device and structure
KR101200526B1 (ko) 2010-06-09 2012-11-13 주식회사 엔유씨전자 마그네슘계 금속의 금속 질감을 구현할 수 있는 마그네슘 표면처리 방법
US8642416B2 (en) 2010-07-30 2014-02-04 Monolithic 3D Inc. Method of forming three dimensional integrated circuit devices using layer transfer technique
US10217667B2 (en) 2011-06-28 2019-02-26 Monolithic 3D Inc. 3D semiconductor device, fabrication method and system
US9219005B2 (en) 2011-06-28 2015-12-22 Monolithic 3D Inc. Semiconductor system and device
US8901613B2 (en) 2011-03-06 2014-12-02 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US9953925B2 (en) 2011-06-28 2018-04-24 Monolithic 3D Inc. Semiconductor system and device
US8613897B2 (en) * 2010-08-10 2013-12-24 Uop Llc Densified fumed metal oxides and methods for producing the same
US10497713B2 (en) 2010-11-18 2019-12-03 Monolithic 3D Inc. 3D semiconductor memory device and structure
US8273610B2 (en) 2010-11-18 2012-09-25 Monolithic 3D Inc. Method of constructing a semiconductor device and structure
US11482440B2 (en) 2010-12-16 2022-10-25 Monolithic 3D Inc. 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits
US8163581B1 (en) 2010-10-13 2012-04-24 Monolith IC 3D Semiconductor and optoelectronic devices
US11257867B1 (en) 2010-10-11 2022-02-22 Monolithic 3D Inc. 3D semiconductor device and structure with oxide bonds
US11158674B2 (en) 2010-10-11 2021-10-26 Monolithic 3D Inc. Method to produce a 3D semiconductor device and structure
US8114757B1 (en) 2010-10-11 2012-02-14 Monolithic 3D Inc. Semiconductor device and structure
US11227897B2 (en) 2010-10-11 2022-01-18 Monolithic 3D Inc. Method for producing a 3D semiconductor memory device and structure
US11315980B1 (en) 2010-10-11 2022-04-26 Monolithic 3D Inc. 3D semiconductor device and structure with transistors
US10896931B1 (en) 2010-10-11 2021-01-19 Monolithic 3D Inc. 3D semiconductor device and structure
US11469271B2 (en) 2010-10-11 2022-10-11 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
US10290682B2 (en) 2010-10-11 2019-05-14 Monolithic 3D Inc. 3D IC semiconductor device and structure with stacked memory
US11600667B1 (en) 2010-10-11 2023-03-07 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
US11024673B1 (en) 2010-10-11 2021-06-01 Monolithic 3D Inc. 3D semiconductor device and structure
US11018191B1 (en) 2010-10-11 2021-05-25 Monolithic 3D Inc. 3D semiconductor device and structure
US10833108B2 (en) 2010-10-13 2020-11-10 Monolithic 3D Inc. 3D microdisplay device and structure
US9197804B1 (en) 2011-10-14 2015-11-24 Monolithic 3D Inc. Semiconductor and optoelectronic devices
US8283215B2 (en) 2010-10-13 2012-10-09 Monolithic 3D Inc. Semiconductor and optoelectronic devices
US11133344B2 (en) 2010-10-13 2021-09-28 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US11404466B2 (en) 2010-10-13 2022-08-02 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US11855100B2 (en) 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11869915B2 (en) 2010-10-13 2024-01-09 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11855114B2 (en) 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11164898B2 (en) 2010-10-13 2021-11-02 Monolithic 3D Inc. Multilevel semiconductor device and structure
US11063071B1 (en) 2010-10-13 2021-07-13 Monolithic 3D Inc. Multilevel semiconductor device and structure with waveguides
US10943934B2 (en) 2010-10-13 2021-03-09 Monolithic 3D Inc. Multilevel semiconductor device and structure
US11043523B1 (en) 2010-10-13 2021-06-22 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US11437368B2 (en) 2010-10-13 2022-09-06 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US10978501B1 (en) 2010-10-13 2021-04-13 Monolithic 3D Inc. Multilevel semiconductor device and structure with waveguides
US11605663B2 (en) 2010-10-13 2023-03-14 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11327227B2 (en) 2010-10-13 2022-05-10 Monolithic 3D Inc. Multilevel semiconductor device and structure with electromagnetic modulators
US8379458B1 (en) 2010-10-13 2013-02-19 Monolithic 3D Inc. Semiconductor device and structure
US11163112B2 (en) 2010-10-13 2021-11-02 Monolithic 3D Inc. Multilevel semiconductor device and structure with electromagnetic modulators
US11694922B2 (en) 2010-10-13 2023-07-04 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US10998374B1 (en) 2010-10-13 2021-05-04 Monolithic 3D Inc. Multilevel semiconductor device and structure
US10679977B2 (en) 2010-10-13 2020-06-09 Monolithic 3D Inc. 3D microdisplay device and structure
US11929372B2 (en) 2010-10-13 2024-03-12 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11521888B2 (en) 2010-11-18 2022-12-06 Monolithic 3D Inc. 3D semiconductor device and structure with high-k metal gate transistors
US11107721B2 (en) 2010-11-18 2021-08-31 Monolithic 3D Inc. 3D semiconductor device and structure with NAND logic
US11569117B2 (en) 2010-11-18 2023-01-31 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US11121021B2 (en) 2010-11-18 2021-09-14 Monolithic 3D Inc. 3D semiconductor device and structure
US11004719B1 (en) 2010-11-18 2021-05-11 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11804396B2 (en) 2010-11-18 2023-10-31 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11923230B1 (en) 2010-11-18 2024-03-05 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11031275B2 (en) 2010-11-18 2021-06-08 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11784082B2 (en) 2010-11-18 2023-10-10 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11018042B1 (en) 2010-11-18 2021-05-25 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11482438B2 (en) 2010-11-18 2022-10-25 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11211279B2 (en) 2010-11-18 2021-12-28 Monolithic 3D Inc. Method for processing a 3D integrated circuit and structure
US11495484B2 (en) 2010-11-18 2022-11-08 Monolithic 3D Inc. 3D semiconductor devices and structures with at least two single-crystal layers
US11862503B2 (en) 2010-11-18 2024-01-02 Monolithic 3D Inc. Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11508605B2 (en) 2010-11-18 2022-11-22 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11901210B2 (en) 2010-11-18 2024-02-13 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11854857B1 (en) 2010-11-18 2023-12-26 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11610802B2 (en) 2010-11-18 2023-03-21 Monolithic 3D Inc. Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes
US11443971B2 (en) 2010-11-18 2022-09-13 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11735462B2 (en) 2010-11-18 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US11094576B1 (en) 2010-11-18 2021-08-17 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11482439B2 (en) 2010-11-18 2022-10-25 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors
US11355381B2 (en) 2010-11-18 2022-06-07 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11164770B1 (en) 2010-11-18 2021-11-02 Monolithic 3D Inc. Method for producing a 3D semiconductor memory device and structure
US11355380B2 (en) 2010-11-18 2022-06-07 Monolithic 3D Inc. Methods for producing 3D semiconductor memory device and structure utilizing alignment marks
US11615977B2 (en) 2010-11-18 2023-03-28 Monolithic 3D Inc. 3D semiconductor memory device and structure
US8975670B2 (en) 2011-03-06 2015-03-10 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US10388568B2 (en) 2011-06-28 2019-08-20 Monolithic 3D Inc. 3D semiconductor device and system
US8687399B2 (en) 2011-10-02 2014-04-01 Monolithic 3D Inc. Semiconductor device and structure
US9029173B2 (en) 2011-10-18 2015-05-12 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
TWI573864B (zh) 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
US8916061B2 (en) 2012-03-14 2014-12-23 Cabot Microelectronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US9000557B2 (en) 2012-03-17 2015-04-07 Zvi Or-Bach Semiconductor device and structure
US8557632B1 (en) 2012-04-09 2013-10-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US11088050B2 (en) 2012-04-09 2021-08-10 Monolithic 3D Inc. 3D semiconductor device with isolation layers
US11410912B2 (en) 2012-04-09 2022-08-09 Monolithic 3D Inc. 3D semiconductor device with vias and isolation layers
US11616004B1 (en) 2012-04-09 2023-03-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US10600888B2 (en) 2012-04-09 2020-03-24 Monolithic 3D Inc. 3D semiconductor device
US11735501B1 (en) 2012-04-09 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11694944B1 (en) 2012-04-09 2023-07-04 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11881443B2 (en) 2012-04-09 2024-01-23 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11476181B1 (en) 2012-04-09 2022-10-18 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11594473B2 (en) 2012-04-09 2023-02-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11164811B2 (en) 2012-04-09 2021-11-02 Monolithic 3D Inc. 3D semiconductor device with isolation layers and oxide-to-oxide bonding
US9633863B2 (en) 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US8518135B1 (en) * 2012-08-27 2013-08-27 Cabot Microelectronics Corporation Polishing composition containing hybrid abrasive for nickel-phosphorous coated memory disks
JP6321022B2 (ja) * 2012-11-02 2018-05-09 ローレンス リバモア ナショナル セキュリティー， エルエルシー 表面活性を失うことなく荷電コロイドの凝集を阻止する方法
US8686428B1 (en) 2012-11-16 2014-04-01 Monolithic 3D Inc. Semiconductor device and structure
US8574929B1 (en) 2012-11-16 2013-11-05 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11784169B2 (en) 2012-12-22 2023-10-10 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US8674470B1 (en) 2012-12-22 2014-03-18 Monolithic 3D Inc. Semiconductor device and structure
US11309292B2 (en) 2012-12-22 2022-04-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11018116B2 (en) 2012-12-22 2021-05-25 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11916045B2 (en) 2012-12-22 2024-02-27 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11217565B2 (en) 2012-12-22 2022-01-04 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11063024B1 (en) 2012-12-22 2021-07-13 Monlithic 3D Inc. Method to form a 3D semiconductor device and structure
US9385058B1 (en) 2012-12-29 2016-07-05 Monolithic 3D Inc. Semiconductor device and structure
US9871034B1 (en) 2012-12-29 2018-01-16 Monolithic 3D Inc. Semiconductor device and structure
US10115663B2 (en) 2012-12-29 2018-10-30 Monolithic 3D Inc. 3D semiconductor device and structure
US11430667B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US10651054B2 (en) 2012-12-29 2020-05-12 Monolithic 3D Inc. 3D semiconductor device and structure
US10600657B2 (en) 2012-12-29 2020-03-24 Monolithic 3D Inc 3D semiconductor device and structure
US11430668B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11177140B2 (en) 2012-12-29 2021-11-16 Monolithic 3D Inc. 3D semiconductor device and structure
US10892169B2 (en) 2012-12-29 2021-01-12 Monolithic 3D Inc. 3D semiconductor device and structure
US11087995B1 (en) 2012-12-29 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US10903089B1 (en) 2012-12-29 2021-01-26 Monolithic 3D Inc. 3D semiconductor device and structure
US11004694B1 (en) 2012-12-29 2021-05-11 Monolithic 3D Inc. 3D semiconductor device and structure
US10325651B2 (en) 2013-03-11 2019-06-18 Monolithic 3D Inc. 3D semiconductor device with stacked memory
US11869965B2 (en) 2013-03-11 2024-01-09 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US8902663B1 (en) 2013-03-11 2014-12-02 Monolithic 3D Inc. Method of maintaining a memory state
US11935949B1 (en) 2013-03-11 2024-03-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US11088130B2 (en) 2014-01-28 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US8994404B1 (en) 2013-03-12 2015-03-31 Monolithic 3D Inc. Semiconductor device and structure
US11398569B2 (en) 2013-03-12 2022-07-26 Monolithic 3D Inc. 3D semiconductor device and structure
US10840239B2 (en) 2014-08-26 2020-11-17 Monolithic 3D Inc. 3D semiconductor device and structure
US11923374B2 (en) 2013-03-12 2024-03-05 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US9117749B1 (en) 2013-03-15 2015-08-25 Monolithic 3D Inc. Semiconductor device and structure
US10224279B2 (en) 2013-03-15 2019-03-05 Monolithic 3D Inc. Semiconductor device and structure
US11720736B2 (en) 2013-04-15 2023-08-08 Monolithic 3D Inc. Automation methods for 3D integrated circuits and devices
US11574109B1 (en) 2013-04-15 2023-02-07 Monolithic 3D Inc Automation methods for 3D integrated circuits and devices
US9021414B1 (en) 2013-04-15 2015-04-28 Monolithic 3D Inc. Automation for monolithic 3D devices
US11341309B1 (en) 2013-04-15 2022-05-24 Monolithic 3D Inc. Automation for monolithic 3D devices
US11030371B2 (en) 2013-04-15 2021-06-08 Monolithic 3D Inc. Automation for monolithic 3D devices
US11487928B2 (en) 2013-04-15 2022-11-01 Monolithic 3D Inc. Automation for monolithic 3D devices
US11270055B1 (en) 2013-04-15 2022-03-08 Monolithic 3D Inc. Automation for monolithic 3D devices
WO2015087771A1 (ja) * 2013-12-13 2015-06-18 株式会社フジミインコーポレーテッド 金属酸化物膜付き物品
US11107808B1 (en) 2014-01-28 2021-08-31 Monolithic 3D Inc. 3D semiconductor device and structure
US11031394B1 (en) 2014-01-28 2021-06-08 Monolithic 3D Inc. 3D semiconductor device and structure
US10297586B2 (en) 2015-03-09 2019-05-21 Monolithic 3D Inc. Methods for processing a 3D semiconductor device
US9309442B2 (en) * 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US11011507B1 (en) 2015-04-19 2021-05-18 Monolithic 3D Inc. 3D semiconductor device and structure
US10825779B2 (en) 2015-04-19 2020-11-03 Monolithic 3D Inc. 3D semiconductor device and structure
US10381328B2 (en) 2015-04-19 2019-08-13 Monolithic 3D Inc. Semiconductor device and structure
US11056468B1 (en) 2015-04-19 2021-07-06 Monolithic 3D Inc. 3D semiconductor device and structure
CN115942752A (zh) 2015-09-21 2023-04-07 莫诺利特斯3D有限公司 3d半导体器件和结构
US10522225B1 (en) 2015-10-02 2019-12-31 Monolithic 3D Inc. Semiconductor device with non-volatile memory
US11296115B1 (en) 2015-10-24 2022-04-05 Monolithic 3D Inc. 3D semiconductor device and structure
US10418369B2 (en) 2015-10-24 2019-09-17 Monolithic 3D Inc. Multi-level semiconductor memory device and structure
US10847540B2 (en) 2015-10-24 2020-11-24 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11114464B2 (en) 2015-10-24 2021-09-07 Monolithic 3D Inc. 3D semiconductor device and structure
US11937422B2 (en) 2015-11-07 2024-03-19 Monolithic 3D Inc. Semiconductor memory device and structure
US11114427B2 (en) 2015-11-07 2021-09-07 Monolithic 3D Inc. 3D semiconductor processor and memory device and structure
US9944829B2 (en) * 2015-12-03 2018-04-17 Treliant Fang Halite salts as silicon carbide etchants for enhancing CMP material removal rate for SiC wafer
US11251149B2 (en) 2016-10-10 2022-02-15 Monolithic 3D Inc. 3D memory device and structure
US11812620B2 (en) 2016-10-10 2023-11-07 Monolithic 3D Inc. 3D DRAM memory devices and structures with control circuits
US11930648B1 (en) 2016-10-10 2024-03-12 Monolithic 3D Inc. 3D memory devices and structures with metal layers
US11329059B1 (en) 2016-10-10 2022-05-10 Monolithic 3D Inc. 3D memory devices and structures with thinned single crystal substrates
US11869591B2 (en) 2016-10-10 2024-01-09 Monolithic 3D Inc. 3D memory devices and structures with control circuits
US11711928B2 (en) 2016-10-10 2023-07-25 Monolithic 3D Inc. 3D memory devices and structures with control circuits
CN108250234A (zh) * 2016-12-28 2018-07-06 安集微电子（上海）有限公司 一种磷酸酯表面活性剂的合成工艺及其应用
US11296106B2 (en) 2019-04-08 2022-04-05 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11018156B2 (en) 2019-04-08 2021-05-25 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US10892016B1 (en) 2019-04-08 2021-01-12 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11763864B2 (en) 2019-04-08 2023-09-19 Monolithic 3D Inc. 3D memory semiconductor devices and structures with bit-line pillars
US11158652B1 (en) 2019-04-08 2021-10-26 Monolithic 3D Inc. 3D memory semiconductor devices and structures
KR102237346B1 (ko) * 2020-08-24 2021-04-07 에스케이씨솔믹스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
CN115247026A (zh) * 2021-04-26 2022-10-28 福建晶安光电有限公司 一种蓝宝石抛光液及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
US5264010A (en) * 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615955A (en) * 1969-02-28 1971-10-26 Ibm Method for polishing a silicon surface
US3930870A (en) * 1973-12-28 1976-01-06 International Business Machines Corporation Silicon polishing solution preparation
US3869324A (en) * 1973-12-28 1975-03-04 Ibm Method of polishing cadmium telluride
US3869323A (en) * 1973-12-28 1975-03-04 Ibm Method of polishing zinc selenide
US3911562A (en) * 1974-01-14 1975-10-14 Signetics Corp Method of chemical polishing of planar silicon structures having filled grooves therein
US3922393A (en) * 1974-07-02 1975-11-25 Du Pont Process for polishing silicon and germanium semiconductor materials
US3951710A (en) * 1974-09-13 1976-04-20 International Business Machines Corporation Method for removing copper contaminant from semiconductor surfaces
US3979239A (en) * 1974-12-30 1976-09-07 Monsanto Company Process for chemical-mechanical polishing of III-V semiconductor materials
US4057939A (en) * 1975-12-05 1977-11-15 International Business Machines Corporation Silicon wafer polishing
DE2739776A1 (de) * 1976-09-07 1978-03-16 Procter & Gamble Reinigungsmittel
US4108716A (en) * 1976-12-22 1978-08-22 Bell Telephone Laboratories, Incorporated Polishing of CdS crystals
US4184908A (en) * 1978-10-05 1980-01-22 The United States Of America As Represented By The Secretary Of The Navy Method for polishing cadmium sulfide semiconductors
US4323422A (en) * 1980-04-24 1982-04-06 Calawa Arthur R Method for preparing optically flat damage-free surfaces
US4549374A (en) * 1982-08-12 1985-10-29 International Business Machines Corporation Method for polishing semiconductor wafers with montmorillonite slurry
JPS5953317B2 (ja) * 1983-03-10 1984-12-24 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション 非晶質酸化アルミニウム表面の化学的−機械的研摩方法
US4600469A (en) * 1984-12-21 1986-07-15 Honeywell Inc. Method for polishing detector material
JPS6225187A (ja) * 1985-07-25 1987-02-03 Fujimi Kenmazai Kogyo Kk メモリ−ハ−ドデイスクの研磨用組成物
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4671851A (en) * 1985-10-28 1987-06-09 International Business Machines Corporation Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
US4671852A (en) * 1986-05-07 1987-06-09 The Standard Oil Company Method of forming suspended gate, chemically sensitive field-effect transistor
US4956313A (en) * 1987-08-17 1990-09-11 International Business Machines Corporation Via-filling and planarization technique
JPH01187930A (ja) * 1988-01-22 1989-07-27 Nippon Telegr & Teleph Corp <Ntt> 研磨剤及び研磨方法
US4793895A (en) * 1988-01-25 1988-12-27 Ibm Corporation In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection
JP2643262B2 (ja) * 1988-03-23 1997-08-20 日本電気株式会社 半導体装置の製造方法
US4962064A (en) * 1988-05-12 1990-10-09 Advanced Micro Devices, Inc. Method of planarization of topologies in integrated circuit structures
US4954459A (en) * 1988-05-12 1990-09-04 Advanced Micro Devices, Inc. Method of planarization of topologies in integrated circuit structures
US4910155A (en) * 1988-10-28 1990-03-20 International Business Machines Corporation Wafer flood polishing
JP2714411B2 (ja) * 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研摩用組成物
US5084071A (en) * 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US4954142A (en) * 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5188987A (en) * 1989-04-10 1993-02-23 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device using a polishing step prior to a selective vapor growth step
US5234867A (en) * 1992-05-27 1993-08-10 Micron Technology, Inc. Method for planarizing semiconductor wafers with a non-circular polishing pad
US5157876A (en) * 1990-04-10 1992-10-27 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
US5137544A (en) * 1990-04-10 1992-08-11 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
US5081421A (en) * 1990-05-01 1992-01-14 At&T Bell Laboratories In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection
US5094972A (en) * 1990-06-14 1992-03-10 National Semiconductor Corp. Means of planarizing integrated circuits with fully recessed isolation dielectric
US4992135A (en) * 1990-07-24 1991-02-12 Micron Technology, Inc. Method of etching back of tungsten layers on semiconductor wafers, and solution therefore
US5036015A (en) * 1990-09-24 1991-07-30 Micron Technology, Inc. Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers
US5064683A (en) * 1990-10-29 1991-11-12 Motorola, Inc. Method for polish planarizing a semiconductor substrate by using a boron nitride polish stop
US5194344A (en) * 1991-03-26 1993-03-16 Micron Technology, Inc. Method of fabricating phase shift reticles including chemically mechanically planarizing
US5137597A (en) * 1991-04-11 1992-08-11 Microelectronics And Computer Technology Corporation Fabrication of metal pillars in an electronic component using polishing
US5069002A (en) * 1991-04-17 1991-12-03 Micron Technology, Inc. Apparatus for endpoint detection during mechanical planarization of semiconductor wafers
US5225358A (en) * 1991-06-06 1993-07-06 Lsi Logic Corporation Method of forming late isolation with polishing
US5124780A (en) * 1991-06-10 1992-06-23 Micron Technology, Inc. Conductive contact plug and a method of forming a conductive contact plug in an integrated circuit using laser planarization
US5169491A (en) * 1991-07-29 1992-12-08 Micron Technology, Inc. Method of etching SiO2 dielectric layers using chemical mechanical polishing techniques
US5246884A (en) * 1991-10-30 1993-09-21 International Business Machines Corporation Cvd diamond or diamond-like carbon for chemical-mechanical polish etch stop
US5663224A (en) * 1991-12-03 1997-09-02 Rohm And Haas Company Process for preparing an aqueous dispersion
US5240552A (en) * 1991-12-11 1993-08-31 Micron Technology, Inc. Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection
US5223734A (en) * 1991-12-18 1993-06-29 Micron Technology, Inc. Semiconductor gettering process using backside chemical mechanical planarization (CMP) and dopant diffusion
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US5244534A (en) * 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
US5229331A (en) * 1992-02-14 1993-07-20 Micron Technology, Inc. Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology
US5245790A (en) * 1992-02-14 1993-09-21 Lsi Logic Corporation Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers
US5270241A (en) * 1992-03-13 1993-12-14 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
US5162248A (en) * 1992-03-13 1992-11-10 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
US5222329A (en) * 1992-03-26 1993-06-29 Micron Technology, Inc. Acoustical method and system for detecting and controlling chemical-mechanical polishing (CMP) depths into layers of conductors, semiconductors, and dielectric materials
US5245794A (en) * 1992-04-09 1993-09-21 Advanced Micro Devices, Inc. Audio end point detector for chemical-mechanical polishing and method therefor
US5267418A (en) * 1992-05-27 1993-12-07 International Business Machines Corporation Confined water fixture for holding wafers undergoing chemical-mechanical polishing
US5225034A (en) * 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
US5209816A (en) * 1992-06-04 1993-05-11 Micron Technology, Inc. Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
US5265370A (en) * 1992-07-31 1993-11-30 Wold Leroy Collapsible fishook
US5232875A (en) * 1992-10-15 1993-08-03 Micron Technology, Inc. Method and apparatus for improving planarity of chemical-mechanical planarization operations
US5234868A (en) * 1992-10-29 1993-08-10 International Business Machines Corporation Method for determining planarization endpoint during chemical-mechanical polishing
US5272117A (en) * 1992-12-07 1993-12-21 Motorola, Inc. Method for planarizing a layer of material
US5271798A (en) * 1993-03-29 1993-12-21 Micron Technology, Inc. Method for selective removal of a material from a wafer's alignment marks

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
US5264010A (en) * 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102027100A (zh) * 2008-04-28 2011-04-20 Ppt研究公司 线切割设备用的切割和润滑组合物
CN102027100B (zh) * 2008-04-28 2015-10-07 Ppt研究公司 线切割设备用的切割和润滑组合物

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IL115454A0 (en) 1995-12-31
ATE220711T1 (de) 2002-08-15
CN1166805A (zh) 1997-12-03
DE708160T1 (de) 2001-10-11
JP3377892B2 (ja) 2003-02-17
HK1004666A1 (en) 1998-12-04
JPH08197414A (ja) 1996-08-06
EP0708160B1 (en) 2002-07-17
WO1996011082A1 (en) 1996-04-18
AU3549495A (en) 1996-05-02
ES2159495T3 (es) 2003-03-16
EP0708160A2 (en) 1996-04-24
US5527423A (en) 1996-06-18
KR960013577A (ko) 1996-05-22
EP0708160A3 (en) 1997-06-11
MY112735A (en) 2001-08-30
IL115454A (en) 2000-02-17
ES2159495T1 (es) 2001-10-16
DE69527406D1 (de) 2002-08-22
DE69527406T2 (de) 2003-03-13
KR100362141B1 (ko) 2003-02-11

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