CN1088001A - 具有光阻挡层的高效空间光调制器 - Google Patents
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Abstract
一种具有接收光并具有挡住光(22)到达衬底的
金属层(24)的光有源区的半导体器件。该衬底包含
寻址电路(12)、(14)和(16),如果通过与光接触而形
成光生载流子,则这些电路能经受漏电流。一金属层
(24)被淀积作为器件的整体部分用于防止光到达衬
底。
Description
本发明涉及空间光调制器,尤其涉及半导体空间光调制器。
空间光调制器典型地由可个别寻址的线阵或面阵的单元组成。作为举例有:液晶显示单元、电-光调制器,磁-光调制器和数字式微镜(也称为可形变镜器件)。空间光调制器典型地有某种寻址电路、该电路允许每个单元被单独寻址。例如,液晶显示器,当它们处于透射状态时具有使晶体材料透射或阻碍透射的电极。这些电极也可有某种存贮结构与它们相联,使电极存贮确定每个单元状态的数据。
依赖其中设有它们寻址电路的半导体材料的空间光调制器存在着问题。这就是,必须使用直接照射这些单元的光源,入射到半导体如硅上的光产生载流子,这能导致寻址和存贮电路(如果使用的话)具有由这些光生载流子产生的漏电流。
通过将双层(double-level)金属寻址线应用于动态随机存取存贮器(DRAM)能减少光生载流子的产生。通常包含使用一层金属于水平互连和另一层金属用于垂直互连如数据线、地址线和电源供给的这一工艺过程一定会复盖着大部分的基片。遗憾的是,用于空间光调制器的光量能透过一复盖层,而引起漏电的光生载流子对半导体光调制器仍然是个问题。
这里揭示的本发明包含用于半导体空间光调制器的制造方法和结构,这种方法和结构显著地减少了半导体材料中产生的光生载流子。为与空间光调制器的结构相适配,一层光阻挡金属取一定图形。该层阻挡着入射到调制器上的照明的相当大的一部分,并防止光与半导体材料的接触。另外,它通过减少对针孔缺陷的敏感性使寻址电路各层之间的短路危害减至最小。
为了更完整理解本发明及其进一步的优点,现在结合附图进行如下详细描述。其中,
图1A-1B表示一空间光调制器的寻址电路的已有技术实施例和一光阻挡层的实施例;
图2表示制造具有光阻挡图的空间光调制器的方法流程图;
图3A-3F一层接一层地表示具有光阻挡层的空间光调制器阵列的顶视图。
先前,CMOS动态随机存取存贮器(DRAM)用双层(double level)金属工艺来克服在半导体基片中光生载流子问题。通常,这种方式工作在光以低强度照射器件时的情况。对于需要空间光调制器利用中等强度至高强度光聚焦在它们上面的系统,在基片中仍然出现产生超量的光生载流子。
具有双层金属的寻址电路的一个例子示于图1A中。基片10上有一源极16、一漏极12和一栅极14。所示寻址电路用于数字式微镜,且由电极层18组成,该电极与基片10中的每个寻址晶体管的源极16相接触。光子20撞击电极层18并由金属将其挡住。光子22没有被电极层挡住并通过氧化层21与基片接触。光子22在基片中产生光生载流子且漏电流流出该晶体管,最终导致该电极失去它的寻址数据。
图1B表示应用本发明一实施例的数字式微镜器件。基片10有源极16、漏极12和栅极14。一个新的取一定图形的金属层或其它不透光的导电材料形成一阻挡层24。阻挡层24能由氧化层23支撑,它形成一定图形使寻址层与晶体管源极16相接触。电极层18现在位于阻挡层之上,在氧化层25上。当光子20撞到电极上,它仍被阻挡。另外,当光子22撞到器件上,它穿过电极层并撞到光阻挡层24上,也被阻挡。
这种阻挡特性也排除了大多数的针孔危害(pinhole risk)。在图1B中,人们能看到:在器件的大部分表面上在氧化层25中存在着针孔缺陷,这会使电极层18与阻挡层24短路。穿过氧化层25的接触图型结构已将与这种缺陷关联的危害减至最小程度,层18的每个几何结构的大部分区域与位于其下的层24的那部分等电位。针孔危害被限制到一个小小的重叠区域,如27和29,只有在这些区域中,层18和24的重叠部分才处于不同电位。
图2详细描述了制造过程一实施例的流程图。准备好衬底,它是一种半导体,通常在步骤26将其制成薄片。在步骤28中形成最终激励镜元件的寻址电路。对于设计者而言,不管这些寻址电路是植入的晶体管还是做成的薄膜,它们通常包括在衬底上的电有源层内。作为这步骤的部分,该金属层,如果不是先前用于形成电有源区域的话,也淀积在基片上形成与该电有源区域的接触。步骤30用氧化物复盖寻址电路以允许淀积光阻挡层。
在步骤32中,淀积光阻挡层并形成一定的图形以避免与电有源区接触。当这种光阻挡层处于与镜元件和着陆电极不同电位时,不希望光阻挡层与这些区域接触。寻址电极希望处于变化的电位。最后,在步骤36中,开始标准的光调制器的制造过程。在数字式微镜情况下,这种制造过程的完成是淀积电极层和梁金属(beam metal),用一厚层的光阻材料复盖它们形成一隔离层,再淀积柱和绞链层,镜金属,然后做成一定图形和蚀刻使镜元件通过最近由厚层占有的空间自由运动。
在图3中,一层接一层地显示了数字式微镜器件的顶视图。图3A表明器件的第一层,即基片区38,它大略对应于调制器制造其上的衬底面积。区域40表示给电极以信号使调制器元件作出响应的电有源区,例如图1A和1B中的漏极16。在图3B中,图3A的层用氧化物复盖,且使其成一定图形构成与图3A的电有源区的接触42。图3C表明光阻挡层44,它是图3B中构成接触上面的一层。长虚线将用来表示这一层,而图3A中的点线表示电有源区,实线表示接触。请注意,在复盖与电有源区的接触的金属片44和金属46的剩余部分之间存在间隙。这是因为对这些区域要求有不同的电压。内金属层将处于寻址电位,而外层处于被寻址元件的电位。
图3D显示了又一接触层。这些接触48接触图3C的内金属片44。另外,接触图3C的金属层46的接触50将维持调制器的有源区金属在地电位。这些接触50每一个连接到阵列中四个不同的镜子,这里仅显示了其中的一个,于是仅用短线表示。在图3E中,淀积调制器有源区。柱金属(post metal)和着陆电极(landing electrodes)52与图3D的接触50相接触,使它们接地,且寻址电极54与图3D的内接触48相接触。短虚线表明图3E中的电极层。
最后,在图3F中,整个寻址电路用图3A-3E一个挨一个叠放来表示。点线区40是图3A的植入物。由于那些接触位于基片上的相同格栅上,所以实线方块实际上代表两层接触,即图3B和图3D的层。最后柱上的图3D的接触50和形成寻址电极54的最后一层电极金属加在一起构成了元件的寻址电路。从这点开始该调制器的标准制造。如果调制器不是数字式微镜,当删除图3E和3F中的梁金属时,柱的接触将有更大的差别。
于是,虽然这里对具有光阻挡层的半导体光调制器的特定实施例作了详细描述,但这种具体描述不能看作对本发明的范围的限定,本发明将由如下权利要求书加以限定。
Claims (10)
1、一种半导体器件,它包含:
a,一衬底;
b,在所述基片中的电有源区;
c,基本上阻挡全部到达所述衬底的光第一金属层,它至少包含两个区域、一个区域至少与所述基片中的所述电有源区之一相接触,另一区域避开与所述电有源区相接触;和
d,形成着陆电极和寻址电极的第二金属层,其中所述寻址电极与接触所述电有源区的所述一个区域相连,而所述着陆电极与避开与所述电有源区的所述另一区域相连接。
2、如权利要求1或10所述器件,其特征在于,所述衬底是硅。
3、如权利要求1或10所述器件,其特征在于,所述电有源区域进一步包含晶体管的源极和漏极。
4、如权利要求9所述的器件,其特征在于,所述接收光的光有源区是数字式微镜器件的镜面部分。
5、一种制造半导体器件的方法,它包含:
a,准备一片衬底;
b,在所述基片上形成电有源区;
c,在所述电有源区上淀积一金属层,以使所述金属层具有:至少一个与所述电有源区接触的区域,和一个避开与所述电有源区接触的分开区域;
d,规定一构成着陆和地址电极的第二金属层,使得所述着陆电极避开与所述第一金属层的所述电有源区接触的所述区域相接触,且所述寻址电极与所述第一金属层的所述电有源区相接触的所述区域相接触;和
e,开发一光有源区以便所述区使所述第一和第二金属层,所述电有源区和所述衬底挡住撞击所述光有源区的光。
6、如权利要求5所述方法,其特征在于,所述形成步骤进一步包含在所述基片中形成晶体管。
7、如权利要求5所述方法,其特征在于,所述开发步骤进一步包含用光阻材料复盖所述第二金属层,淀积一附加金属层,使所述附加金属层成一定图表以形成铰链和柱,且除掉几乎所有的所述光阻材料。
8、如权利要求1所述半导体器件,其特征在于,所述第二金属层基本上挡住到达所述第一金属层的所述一区域和另一区域之间间隔的几乎全部的光。
9、如权利要求1或10所述半导体器件,其特征在于,它进一步包含在所述半导体器件的表面上的光有源区,所述光有源区接收来自一光源的光以便由所述光有源区使所述第二金属层,所述第一金属层,所述电有源区和所述衬底部分地蔽屏掉来自所述光源的光。
10、一种半导体器件,它包含:
a,一衬底;
b,在所述衬底中的电有源区;
c,阻挡光到达所述衬底的第一金属层;
d,形成着陆电极和寻址电极的第二金属层,所述第二金属层复盖了没有被所述第一金属层和所述第一金属层的重叠部分所复盖的几乎全部的区域,其中所述第一金属层和第二金属层一起挡住几乎所有的到达所述衬底的光。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/928,251 US5818095A (en) | 1992-08-11 | 1992-08-11 | High-yield spatial light modulator with light blocking layer |
US928,251 | 1992-08-11 |
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CN1088001A true CN1088001A (zh) | 1994-06-15 |
CN1041019C CN1041019C (zh) | 1998-12-02 |
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CN93109152A Expired - Fee Related CN1041019C (zh) | 1992-08-11 | 1993-07-27 | 具有光阻挡层的高效空间光调制器 |
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US (2) | US5818095A (zh) |
EP (1) | EP0582850B1 (zh) |
JP (1) | JPH06169102A (zh) |
KR (1) | KR100277451B1 (zh) |
CN (1) | CN1041019C (zh) |
DE (1) | DE69325213T2 (zh) |
TW (1) | TW288212B (zh) |
Cited By (1)
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CN1914538B (zh) * | 2004-02-03 | 2010-05-26 | Idc公司 | 具有集成式光学结构的空间光调制器 |
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US6674562B1 (en) | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
US7830587B2 (en) | 1993-03-17 | 2010-11-09 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light with semiconductor substrate |
US8081369B2 (en) * | 1994-05-05 | 2011-12-20 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
US7776631B2 (en) | 1994-05-05 | 2010-08-17 | Qualcomm Mems Technologies, Inc. | MEMS device and method of forming a MEMS device |
US7852545B2 (en) * | 1994-05-05 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US7839556B2 (en) * | 1994-05-05 | 2010-11-23 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US7808694B2 (en) | 1994-05-05 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US7826120B2 (en) * | 1994-05-05 | 2010-11-02 | Qualcomm Mems Technologies, Inc. | Method and device for multi-color interferometric modulation |
US7460291B2 (en) * | 1994-05-05 | 2008-12-02 | Idc, Llc | Separable modulator |
US7550794B2 (en) * | 2002-09-20 | 2009-06-23 | Idc, Llc | Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer |
US7123216B1 (en) * | 1994-05-05 | 2006-10-17 | Idc, Llc | Photonic MEMS and structures |
US6680792B2 (en) * | 1994-05-05 | 2004-01-20 | Iridigm Display Corporation | Interferometric modulation of radiation |
US7738157B2 (en) | 1994-05-05 | 2010-06-15 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
US8014059B2 (en) | 1994-05-05 | 2011-09-06 | Qualcomm Mems Technologies, Inc. | System and method for charge control in a MEMS device |
US7898722B2 (en) * | 1995-05-01 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with restoring electrode |
US7907319B2 (en) | 1995-11-06 | 2011-03-15 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light with optical compensation |
US5953153A (en) * | 1996-10-29 | 1999-09-14 | Texas Instruments Incorporated | Spatial light modulator with improved light shield |
US7929197B2 (en) * | 1996-11-05 | 2011-04-19 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
US7830588B2 (en) * | 1996-12-19 | 2010-11-09 | Qualcomm Mems Technologies, Inc. | Method of making a light modulating display device and associated transistor circuitry and structures thereof |
US7471444B2 (en) * | 1996-12-19 | 2008-12-30 | Idc, Llc | Interferometric modulation of radiation |
US5859463A (en) * | 1996-12-23 | 1999-01-12 | General Electric Company | Photosensitive imager contact pad structure |
JP3037191B2 (ja) * | 1997-04-22 | 2000-04-24 | 日本電気アイシーマイコンシステム株式会社 | 半導体装置 |
US6284627B1 (en) | 1997-09-19 | 2001-09-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for wiring semi-conductor components in order to prevent product piracy and manipulation, semi-conductors component made according to this method and use of said semi-conductor component in a chip card |
US8928967B2 (en) | 1998-04-08 | 2015-01-06 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
WO1999052006A2 (en) * | 1998-04-08 | 1999-10-14 | Etalon, Inc. | Interferometric modulation of radiation |
US6278169B1 (en) * | 1998-05-07 | 2001-08-21 | Analog Devices, Inc. | Image sensor shielding |
DE19840251B4 (de) * | 1998-09-03 | 2004-02-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Schaltungschip, insbesondere Transponder mit Lichtschutz |
US6266178B1 (en) | 1998-12-28 | 2001-07-24 | Texas Instruments Incorporated | Guardring DRAM cell |
US6498635B1 (en) | 1999-03-05 | 2002-12-24 | Chartered Semiconductor Manufacturing Ltd. | Method of forming insulating material alignment posts associated with active device structures |
US6815239B1 (en) | 1999-03-05 | 2004-11-09 | Chartered Semiconductor Manufacturing Ltd. | Photolithographic methods for making liquid-crystal-on-silicon displays with alignment posts and optical interference layers |
JP3445536B2 (ja) * | 1999-10-04 | 2003-09-08 | 三洋電機株式会社 | 半導体装置 |
WO2003007049A1 (en) | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
US7071980B2 (en) | 2000-07-27 | 2006-07-04 | Canon Kabushiki Kaisha | Image sensing apparatus |
US6962771B1 (en) * | 2000-10-13 | 2005-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual damascene process |
US6794119B2 (en) * | 2002-02-12 | 2004-09-21 | Iridigm Display Corporation | Method for fabricating a structure for a microelectromechanical systems (MEMS) device |
US6574033B1 (en) | 2002-02-27 | 2003-06-03 | Iridigm Display Corporation | Microelectromechanical systems device and method for fabricating same |
US7206110B2 (en) * | 2002-06-19 | 2007-04-17 | Miradia Inc. | Memory cell dual protection |
US7034984B2 (en) * | 2002-06-19 | 2006-04-25 | Miradia Inc. | Fabrication of a high fill ratio reflective spatial light modulator with hidden hinge |
US7781850B2 (en) | 2002-09-20 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Controlling electromechanical behavior of structures within a microelectromechanical systems device |
TWI289708B (en) | 2002-12-25 | 2007-11-11 | Qualcomm Mems Technologies Inc | Optical interference type color display |
JP2004294756A (ja) * | 2003-03-27 | 2004-10-21 | Tdk Corp | 空間光変調器及びホログラム記録再生装置 |
TW594360B (en) * | 2003-04-21 | 2004-06-21 | Prime View Int Corp Ltd | A method for fabricating an interference display cell |
TW570896B (en) | 2003-05-26 | 2004-01-11 | Prime View Int Co Ltd | A method for fabricating an interference display cell |
US7221495B2 (en) * | 2003-06-24 | 2007-05-22 | Idc Llc | Thin film precursor stack for MEMS manufacturing |
TW200506479A (en) * | 2003-08-15 | 2005-02-16 | Prime View Int Co Ltd | Color changeable pixel for an interference display |
TWI231865B (en) * | 2003-08-26 | 2005-05-01 | Prime View Int Co Ltd | An interference display cell and fabrication method thereof |
TWI232333B (en) * | 2003-09-03 | 2005-05-11 | Prime View Int Co Ltd | Display unit using interferometric modulation and manufacturing method thereof |
US8064123B2 (en) * | 2003-11-01 | 2011-11-22 | Silicon Quest Kabushiki-Kaisha | Mirror device and MEMS device comprising layered electrode |
US8351107B2 (en) * | 2003-11-01 | 2013-01-08 | Olympus Corporation | Spatial light modulator having capacitor |
US7957050B2 (en) | 2003-11-01 | 2011-06-07 | Silicon Quest Kabushiki-Kaisha | Mirror device comprising layered electrode |
US8228594B2 (en) * | 2003-11-01 | 2012-07-24 | Silicon Quest Kabushiki-Kaisha | Spatial light modulator with metal layers |
US7142346B2 (en) * | 2003-12-09 | 2006-11-28 | Idc, Llc | System and method for addressing a MEMS display |
US7161728B2 (en) | 2003-12-09 | 2007-01-09 | Idc, Llc | Area array modulation and lead reduction in interferometric modulators |
US7532194B2 (en) * | 2004-02-03 | 2009-05-12 | Idc, Llc | Driver voltage adjuster |
US7706050B2 (en) | 2004-03-05 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | Integrated modulator illumination |
US7855824B2 (en) | 2004-03-06 | 2010-12-21 | Qualcomm Mems Technologies, Inc. | Method and system for color optimization in a display |
US7720148B2 (en) * | 2004-03-26 | 2010-05-18 | The Hong Kong University Of Science And Technology | Efficient multi-frame motion estimation for video compression |
US7476327B2 (en) | 2004-05-04 | 2009-01-13 | Idc, Llc | Method of manufacture for microelectromechanical devices |
US7060895B2 (en) * | 2004-05-04 | 2006-06-13 | Idc, Llc | Modifying the electro-mechanical behavior of devices |
US7164520B2 (en) * | 2004-05-12 | 2007-01-16 | Idc, Llc | Packaging for an interferometric modulator |
US7256922B2 (en) * | 2004-07-02 | 2007-08-14 | Idc, Llc | Interferometric modulators with thin film transistors |
TWI233916B (en) * | 2004-07-09 | 2005-06-11 | Prime View Int Co Ltd | A structure of a micro electro mechanical system |
KR101255691B1 (ko) * | 2004-07-29 | 2013-04-17 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 간섭 변조기의 미소기전 동작을 위한 시스템 및 방법 |
US7046419B2 (en) * | 2004-08-13 | 2006-05-16 | Hewlett-Packard Development Company, L.P. | External aperturing for digital micromirror devices |
US7560299B2 (en) * | 2004-08-27 | 2009-07-14 | Idc, Llc | Systems and methods of actuating MEMS display elements |
US7889163B2 (en) | 2004-08-27 | 2011-02-15 | Qualcomm Mems Technologies, Inc. | Drive method for MEMS devices |
US7515147B2 (en) * | 2004-08-27 | 2009-04-07 | Idc, Llc | Staggered column drive circuit systems and methods |
JP3956143B2 (ja) | 2004-09-10 | 2007-08-08 | セイコーエプソン株式会社 | 半導体装置 |
US7602375B2 (en) * | 2004-09-27 | 2009-10-13 | Idc, Llc | Method and system for writing data to MEMS display elements |
US7626581B2 (en) * | 2004-09-27 | 2009-12-01 | Idc, Llc | Device and method for display memory using manipulation of mechanical response |
US7424198B2 (en) | 2004-09-27 | 2008-09-09 | Idc, Llc | Method and device for packaging a substrate |
US20060076634A1 (en) | 2004-09-27 | 2006-04-13 | Lauren Palmateer | Method and system for packaging MEMS devices with incorporated getter |
US7564612B2 (en) * | 2004-09-27 | 2009-07-21 | Idc, Llc | Photonic MEMS and structures |
US7343080B2 (en) * | 2004-09-27 | 2008-03-11 | Idc, Llc | System and method of testing humidity in a sealed MEMS device |
US7532195B2 (en) * | 2004-09-27 | 2009-05-12 | Idc, Llc | Method and system for reducing power consumption in a display |
US7420728B2 (en) * | 2004-09-27 | 2008-09-02 | Idc, Llc | Methods of fabricating interferometric modulators by selectively removing a material |
CN100439967C (zh) * | 2004-09-27 | 2008-12-03 | Idc公司 | 用于多状态干涉光调制的方法和设备 |
US7372613B2 (en) | 2004-09-27 | 2008-05-13 | Idc, Llc | Method and device for multistate interferometric light modulation |
US20060065366A1 (en) * | 2004-09-27 | 2006-03-30 | Cummings William J | Portable etch chamber |
US7553684B2 (en) * | 2004-09-27 | 2009-06-30 | Idc, Llc | Method of fabricating interferometric devices using lift-off processing techniques |
US7373026B2 (en) | 2004-09-27 | 2008-05-13 | Idc, Llc | MEMS device fabricated on a pre-patterned substrate |
US7920135B2 (en) | 2004-09-27 | 2011-04-05 | Qualcomm Mems Technologies, Inc. | Method and system for driving a bi-stable display |
US7554714B2 (en) * | 2004-09-27 | 2009-06-30 | Idc, Llc | Device and method for manipulation of thermal response in a modulator |
US7289259B2 (en) | 2004-09-27 | 2007-10-30 | Idc, Llc | Conductive bus structure for interferometric modulator array |
US7136213B2 (en) * | 2004-09-27 | 2006-11-14 | Idc, Llc | Interferometric modulators having charge persistence |
US7299681B2 (en) * | 2004-09-27 | 2007-11-27 | Idc, Llc | Method and system for detecting leak in electronic devices |
US7936497B2 (en) | 2004-09-27 | 2011-05-03 | Qualcomm Mems Technologies, Inc. | MEMS device having deformable membrane characterized by mechanical persistence |
US7684104B2 (en) | 2004-09-27 | 2010-03-23 | Idc, Llc | MEMS using filler material and method |
US8004504B2 (en) * | 2004-09-27 | 2011-08-23 | Qualcomm Mems Technologies, Inc. | Reduced capacitance display element |
US7808703B2 (en) | 2004-09-27 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | System and method for implementation of interferometric modulator displays |
US7813026B2 (en) | 2004-09-27 | 2010-10-12 | Qualcomm Mems Technologies, Inc. | System and method of reducing color shift in a display |
US7527995B2 (en) * | 2004-09-27 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of making prestructure for MEMS systems |
US7583429B2 (en) | 2004-09-27 | 2009-09-01 | Idc, Llc | Ornamental display device |
US7630119B2 (en) * | 2004-09-27 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Apparatus and method for reducing slippage between structures in an interferometric modulator |
US7630123B2 (en) | 2004-09-27 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Method and device for compensating for color shift as a function of angle of view |
US7843410B2 (en) | 2004-09-27 | 2010-11-30 | Qualcomm Mems Technologies, Inc. | Method and device for electrically programmable display |
US7345805B2 (en) * | 2004-09-27 | 2008-03-18 | Idc, Llc | Interferometric modulator array with integrated MEMS electrical switches |
US7369294B2 (en) * | 2004-09-27 | 2008-05-06 | Idc, Llc | Ornamental display device |
US7675669B2 (en) | 2004-09-27 | 2010-03-09 | Qualcomm Mems Technologies, Inc. | Method and system for driving interferometric modulators |
US7259449B2 (en) * | 2004-09-27 | 2007-08-21 | Idc, Llc | Method and system for sealing a substrate |
US7415186B2 (en) * | 2004-09-27 | 2008-08-19 | Idc, Llc | Methods for visually inspecting interferometric modulators for defects |
US7545550B2 (en) * | 2004-09-27 | 2009-06-09 | Idc, Llc | Systems and methods of actuating MEMS display elements |
US7321456B2 (en) * | 2004-09-27 | 2008-01-22 | Idc, Llc | Method and device for corner interferometric modulation |
US20060103643A1 (en) * | 2004-09-27 | 2006-05-18 | Mithran Mathew | Measuring and modeling power consumption in displays |
US7535466B2 (en) * | 2004-09-27 | 2009-05-19 | Idc, Llc | System with server based control of client device display features |
US7719500B2 (en) | 2004-09-27 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | Reflective display pixels arranged in non-rectangular arrays |
US7724993B2 (en) | 2004-09-27 | 2010-05-25 | Qualcomm Mems Technologies, Inc. | MEMS switches with deforming membranes |
US7327510B2 (en) | 2004-09-27 | 2008-02-05 | Idc, Llc | Process for modifying offset voltage characteristics of an interferometric modulator |
US7369296B2 (en) | 2004-09-27 | 2008-05-06 | Idc, Llc | Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator |
US7653371B2 (en) | 2004-09-27 | 2010-01-26 | Qualcomm Mems Technologies, Inc. | Selectable capacitance circuit |
US7893919B2 (en) | 2004-09-27 | 2011-02-22 | Qualcomm Mems Technologies, Inc. | Display region architectures |
US7928928B2 (en) | 2004-09-27 | 2011-04-19 | Qualcomm Mems Technologies, Inc. | Apparatus and method for reducing perceived color shift |
US20060066596A1 (en) * | 2004-09-27 | 2006-03-30 | Sampsell Jeffrey B | System and method of transmitting video data |
US7302157B2 (en) | 2004-09-27 | 2007-11-27 | Idc, Llc | System and method for multi-level brightness in interferometric modulation |
US7460246B2 (en) * | 2004-09-27 | 2008-12-02 | Idc, Llc | Method and system for sensing light using interferometric elements |
US7586484B2 (en) * | 2004-09-27 | 2009-09-08 | Idc, Llc | Controller and driver features for bi-stable display |
US20060065622A1 (en) * | 2004-09-27 | 2006-03-30 | Floyd Philip D | Method and system for xenon fluoride etching with enhanced efficiency |
US7692839B2 (en) | 2004-09-27 | 2010-04-06 | Qualcomm Mems Technologies, Inc. | System and method of providing MEMS device with anti-stiction coating |
US7916103B2 (en) | 2004-09-27 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | System and method for display device with end-of-life phenomena |
US7612932B2 (en) | 2004-09-27 | 2009-11-03 | Idc, Llc | Microelectromechanical device with optical function separated from mechanical and electrical function |
US7710636B2 (en) | 2004-09-27 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Systems and methods using interferometric optical modulators and diffusers |
US7405861B2 (en) * | 2004-09-27 | 2008-07-29 | Idc, Llc | Method and device for protecting interferometric modulators from electrostatic discharge |
US7420725B2 (en) | 2004-09-27 | 2008-09-02 | Idc, Llc | Device having a conductive light absorbing mask and method for fabricating same |
US7304784B2 (en) | 2004-09-27 | 2007-12-04 | Idc, Llc | Reflective display device having viewable display on both sides |
US7492502B2 (en) * | 2004-09-27 | 2009-02-17 | Idc, Llc | Method of fabricating a free-standing microstructure |
US7446927B2 (en) * | 2004-09-27 | 2008-11-04 | Idc, Llc | MEMS switch with set and latch electrodes |
US7359066B2 (en) * | 2004-09-27 | 2008-04-15 | Idc, Llc | Electro-optical measurement of hysteresis in interferometric modulators |
US7417783B2 (en) * | 2004-09-27 | 2008-08-26 | Idc, Llc | Mirror and mirror layer for optical modulator and method |
US20060066594A1 (en) * | 2004-09-27 | 2006-03-30 | Karen Tyger | Systems and methods for driving a bi-stable display element |
US20060176487A1 (en) * | 2004-09-27 | 2006-08-10 | William Cummings | Process control monitors for interferometric modulators |
US8124434B2 (en) | 2004-09-27 | 2012-02-28 | Qualcomm Mems Technologies, Inc. | Method and system for packaging a display |
US7710629B2 (en) | 2004-09-27 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | System and method for display device with reinforcing substance |
US7679627B2 (en) | 2004-09-27 | 2010-03-16 | Qualcomm Mems Technologies, Inc. | Controller and driver features for bi-stable display |
US7944599B2 (en) | 2004-09-27 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US7355780B2 (en) * | 2004-09-27 | 2008-04-08 | Idc, Llc | System and method of illuminating interferometric modulators using backlighting |
US7130104B2 (en) * | 2004-09-27 | 2006-10-31 | Idc, Llc | Methods and devices for inhibiting tilting of a mirror in an interferometric modulator |
US7349136B2 (en) * | 2004-09-27 | 2008-03-25 | Idc, Llc | Method and device for a display having transparent components integrated therein |
US8878825B2 (en) | 2004-09-27 | 2014-11-04 | Qualcomm Mems Technologies, Inc. | System and method for providing a variable refresh rate of an interferometric modulator display |
US20060077126A1 (en) * | 2004-09-27 | 2006-04-13 | Manish Kothari | Apparatus and method for arranging devices into an interconnected array |
US7668415B2 (en) | 2004-09-27 | 2010-02-23 | Qualcomm Mems Technologies, Inc. | Method and device for providing electronic circuitry on a backplate |
US7701631B2 (en) | 2004-09-27 | 2010-04-20 | Qualcomm Mems Technologies, Inc. | Device having patterned spacers for backplates and method of making the same |
US7317568B2 (en) * | 2004-09-27 | 2008-01-08 | Idc, Llc | System and method of implementation of interferometric modulators for display mirrors |
US8310441B2 (en) | 2004-09-27 | 2012-11-13 | Qualcomm Mems Technologies, Inc. | Method and system for writing data to MEMS display elements |
US8008736B2 (en) | 2004-09-27 | 2011-08-30 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device |
US20060067650A1 (en) * | 2004-09-27 | 2006-03-30 | Clarence Chui | Method of making a reflective display device using thin film transistor production techniques |
US7289256B2 (en) * | 2004-09-27 | 2007-10-30 | Idc, Llc | Electrical characterization of interferometric modulators |
US7368803B2 (en) * | 2004-09-27 | 2008-05-06 | Idc, Llc | System and method for protecting microelectromechanical systems array using back-plate with non-flat portion |
DE102005002967B4 (de) * | 2005-01-21 | 2011-03-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Herstellen eines Bauelementes mit einem beweglichen Abschnitt |
TW200628877A (en) * | 2005-02-04 | 2006-08-16 | Prime View Int Co Ltd | Method of manufacturing optical interference type color display |
US7920136B2 (en) | 2005-05-05 | 2011-04-05 | Qualcomm Mems Technologies, Inc. | System and method of driving a MEMS display device |
US7948457B2 (en) | 2005-05-05 | 2011-05-24 | Qualcomm Mems Technologies, Inc. | Systems and methods of actuating MEMS display elements |
KR20080027236A (ko) | 2005-05-05 | 2008-03-26 | 콸콤 인코포레이티드 | 다이나믹 드라이버 ic 및 디스플레이 패널 구성 |
US7884989B2 (en) | 2005-05-27 | 2011-02-08 | Qualcomm Mems Technologies, Inc. | White interferometric modulators and methods for forming the same |
US20060277486A1 (en) * | 2005-06-02 | 2006-12-07 | Skinner David N | File or user interface element marking system |
JP2009503564A (ja) * | 2005-07-22 | 2009-01-29 | クアルコム,インコーポレイテッド | Memsデバイスのための支持構造、およびその方法 |
EP2495212A3 (en) | 2005-07-22 | 2012-10-31 | QUALCOMM MEMS Technologies, Inc. | Mems devices having support structures and methods of fabricating the same |
US7355779B2 (en) * | 2005-09-02 | 2008-04-08 | Idc, Llc | Method and system for driving MEMS display elements |
KR20080068821A (ko) | 2005-09-30 | 2008-07-24 | 퀄컴 엠이엠스 테크놀로지스, 인크. | Mems 장치 및 해당 장치용의 접속부 |
US7630114B2 (en) * | 2005-10-28 | 2009-12-08 | Idc, Llc | Diffusion barrier layer for MEMS devices |
US8391630B2 (en) | 2005-12-22 | 2013-03-05 | Qualcomm Mems Technologies, Inc. | System and method for power reduction when decompressing video streams for interferometric modulator displays |
US7795061B2 (en) | 2005-12-29 | 2010-09-14 | Qualcomm Mems Technologies, Inc. | Method of creating MEMS device cavities by a non-etching process |
US7636151B2 (en) * | 2006-01-06 | 2009-12-22 | Qualcomm Mems Technologies, Inc. | System and method for providing residual stress test structures |
US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
US7382515B2 (en) * | 2006-01-18 | 2008-06-03 | Qualcomm Mems Technologies, Inc. | Silicon-rich silicon nitrides as etch stops in MEMS manufacture |
US7652814B2 (en) | 2006-01-27 | 2010-01-26 | Qualcomm Mems Technologies, Inc. | MEMS device with integrated optical element |
US8194056B2 (en) | 2006-02-09 | 2012-06-05 | Qualcomm Mems Technologies Inc. | Method and system for writing data to MEMS display elements |
US7582952B2 (en) * | 2006-02-21 | 2009-09-01 | Qualcomm Mems Technologies, Inc. | Method for providing and removing discharging interconnect for chip-on-glass output leads and structures thereof |
US7547568B2 (en) * | 2006-02-22 | 2009-06-16 | Qualcomm Mems Technologies, Inc. | Electrical conditioning of MEMS device and insulating layer thereof |
US7550810B2 (en) * | 2006-02-23 | 2009-06-23 | Qualcomm Mems Technologies, Inc. | MEMS device having a layer movable at asymmetric rates |
US7450295B2 (en) * | 2006-03-02 | 2008-11-11 | Qualcomm Mems Technologies, Inc. | Methods for producing MEMS with protective coatings using multi-component sacrificial layers |
US7643203B2 (en) | 2006-04-10 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Interferometric optical display system with broadband characteristics |
US7903047B2 (en) | 2006-04-17 | 2011-03-08 | Qualcomm Mems Technologies, Inc. | Mode indicator for interferometric modulator displays |
US7417784B2 (en) * | 2006-04-19 | 2008-08-26 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing a porous surface |
US7623287B2 (en) * | 2006-04-19 | 2009-11-24 | Qualcomm Mems Technologies, Inc. | Non-planar surface structures and process for microelectromechanical systems |
US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
US7527996B2 (en) * | 2006-04-19 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Non-planar surface structures and process for microelectromechanical systems |
US20070249078A1 (en) * | 2006-04-19 | 2007-10-25 | Ming-Hau Tung | Non-planar surface structures and process for microelectromechanical systems |
US8049713B2 (en) | 2006-04-24 | 2011-11-01 | Qualcomm Mems Technologies, Inc. | Power consumption optimized display update |
US7369292B2 (en) | 2006-05-03 | 2008-05-06 | Qualcomm Mems Technologies, Inc. | Electrode and interconnect materials for MEMS devices |
US7649671B2 (en) | 2006-06-01 | 2010-01-19 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device with electrostatic actuation and release |
US7405863B2 (en) * | 2006-06-01 | 2008-07-29 | Qualcomm Mems Technologies, Inc. | Patterning of mechanical layer in MEMS to reduce stresses at supports |
US7471442B2 (en) * | 2006-06-15 | 2008-12-30 | Qualcomm Mems Technologies, Inc. | Method and apparatus for low range bit depth enhancements for MEMS display architectures |
US7702192B2 (en) | 2006-06-21 | 2010-04-20 | Qualcomm Mems Technologies, Inc. | Systems and methods for driving MEMS display |
US7385744B2 (en) * | 2006-06-28 | 2008-06-10 | Qualcomm Mems Technologies, Inc. | Support structure for free-standing MEMS device and methods for forming the same |
US7835061B2 (en) | 2006-06-28 | 2010-11-16 | Qualcomm Mems Technologies, Inc. | Support structures for free-standing electromechanical devices |
US7777715B2 (en) | 2006-06-29 | 2010-08-17 | Qualcomm Mems Technologies, Inc. | Passive circuits for de-multiplexing display inputs |
US7388704B2 (en) * | 2006-06-30 | 2008-06-17 | Qualcomm Mems Technologies, Inc. | Determination of interferometric modulator mirror curvature and airgap variation using digital photographs |
US7527998B2 (en) | 2006-06-30 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
US7566664B2 (en) * | 2006-08-02 | 2009-07-28 | Qualcomm Mems Technologies, Inc. | Selective etching of MEMS using gaseous halides and reactive co-etchants |
US7763546B2 (en) | 2006-08-02 | 2010-07-27 | Qualcomm Mems Technologies, Inc. | Methods for reducing surface charges during the manufacture of microelectromechanical systems devices |
US20080043315A1 (en) * | 2006-08-15 | 2008-02-21 | Cummings William J | High profile contacts for microelectromechanical systems |
WO2008045207A2 (en) | 2006-10-06 | 2008-04-17 | Qualcomm Mems Technologies, Inc. | Light guide |
EP2366942A1 (en) | 2006-10-06 | 2011-09-21 | Qualcomm Mems Technologies, Inc. | Optical loss layer integrated in an illumination apparatus of a display |
US7629197B2 (en) | 2006-10-18 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Spatial light modulator |
US7535621B2 (en) | 2006-12-27 | 2009-05-19 | Qualcomm Mems Technologies, Inc. | Aluminum fluoride films for microelectromechanical system applications |
US7403180B1 (en) * | 2007-01-29 | 2008-07-22 | Qualcomm Mems Technologies, Inc. | Hybrid color synthesis for multistate reflective modulator displays |
US8115987B2 (en) | 2007-02-01 | 2012-02-14 | Qualcomm Mems Technologies, Inc. | Modulating the intensity of light from an interferometric reflector |
US7916378B2 (en) | 2007-03-08 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Method and apparatus for providing a light absorbing mask in an interferometric modulator display |
US7733552B2 (en) | 2007-03-21 | 2010-06-08 | Qualcomm Mems Technologies, Inc | MEMS cavity-coating layers and methods |
US7742220B2 (en) | 2007-03-28 | 2010-06-22 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing conducting layers separated by stops |
US7715085B2 (en) | 2007-05-09 | 2010-05-11 | Qualcomm Mems Technologies, Inc. | Electromechanical system having a dielectric movable membrane and a mirror |
US7643202B2 (en) | 2007-05-09 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Microelectromechanical system having a dielectric movable membrane and a mirror |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
US7643199B2 (en) * | 2007-06-19 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | High aperture-ratio top-reflective AM-iMod displays |
US7782517B2 (en) | 2007-06-21 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Infrared and dual mode displays |
US7630121B2 (en) | 2007-07-02 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
WO2009018287A1 (en) | 2007-07-31 | 2009-02-05 | Qualcomm Mems Technologies, Inc. | Devices for enhancing colour shift of interferometric modulators |
US7570415B2 (en) | 2007-08-07 | 2009-08-04 | Qualcomm Mems Technologies, Inc. | MEMS device and interconnects for same |
US8999764B2 (en) | 2007-08-10 | 2015-04-07 | International Business Machines Corporation | Ionizing radiation blocking in IC chip to reduce soft errors |
US8072402B2 (en) | 2007-08-29 | 2011-12-06 | Qualcomm Mems Technologies, Inc. | Interferometric optical modulator with broadband reflection characteristics |
US7847999B2 (en) | 2007-09-14 | 2010-12-07 | Qualcomm Mems Technologies, Inc. | Interferometric modulator display devices |
US7773286B2 (en) * | 2007-09-14 | 2010-08-10 | Qualcomm Mems Technologies, Inc. | Periodic dimple array |
JP5478493B2 (ja) * | 2007-09-17 | 2014-04-23 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | 半透明/半透過の発光干渉デバイス |
US20090078316A1 (en) * | 2007-09-24 | 2009-03-26 | Qualcomm Incorporated | Interferometric photovoltaic cell |
EP2212926A2 (en) | 2007-10-19 | 2010-08-04 | QUALCOMM MEMS Technologies, Inc. | Display with integrated photovoltaics |
US8058549B2 (en) | 2007-10-19 | 2011-11-15 | Qualcomm Mems Technologies, Inc. | Photovoltaic devices with integrated color interferometric film stacks |
US8054527B2 (en) | 2007-10-23 | 2011-11-08 | Qualcomm Mems Technologies, Inc. | Adjustably transmissive MEMS-based devices |
US20090293955A1 (en) * | 2007-11-07 | 2009-12-03 | Qualcomm Incorporated | Photovoltaics with interferometric masks |
US8941631B2 (en) | 2007-11-16 | 2015-01-27 | Qualcomm Mems Technologies, Inc. | Simultaneous light collection and illumination on an active display |
US8068710B2 (en) | 2007-12-07 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | Decoupled holographic film and diffuser |
US7715079B2 (en) | 2007-12-07 | 2010-05-11 | Qualcomm Mems Technologies, Inc. | MEMS devices requiring no mechanical support |
JP2011508430A (ja) * | 2007-12-21 | 2011-03-10 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | 多接合光起電力セル |
BRPI0908803A2 (pt) * | 2008-02-11 | 2015-07-21 | Qualcomm Mems Technologie Inc | Dispositivo e método de sensoreamento, mensuração ou caracterização de elementos de tela integrados com o esquema de drive de tela |
US8164821B2 (en) | 2008-02-22 | 2012-04-24 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with thermal expansion balancing layer or stiffening layer |
US7944604B2 (en) | 2008-03-07 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Interferometric modulator in transmission mode |
US7612933B2 (en) | 2008-03-27 | 2009-11-03 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with spacing layer |
US7898723B2 (en) | 2008-04-02 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical systems display element with photovoltaic structure |
US7969638B2 (en) | 2008-04-10 | 2011-06-28 | Qualcomm Mems Technologies, Inc. | Device having thin black mask and method of fabricating the same |
US8023167B2 (en) | 2008-06-25 | 2011-09-20 | Qualcomm Mems Technologies, Inc. | Backlight displays |
US7768690B2 (en) | 2008-06-25 | 2010-08-03 | Qualcomm Mems Technologies, Inc. | Backlight displays |
US7791783B2 (en) * | 2008-06-25 | 2010-09-07 | Qualcomm Mems Technologies, Inc. | Backlight displays |
US7746539B2 (en) | 2008-06-25 | 2010-06-29 | Qualcomm Mems Technologies, Inc. | Method for packing a display device and the device obtained thereof |
US7859740B2 (en) | 2008-07-11 | 2010-12-28 | Qualcomm Mems Technologies, Inc. | Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control |
US7855826B2 (en) | 2008-08-12 | 2010-12-21 | Qualcomm Mems Technologies, Inc. | Method and apparatus to reduce or eliminate stiction and image retention in interferometric modulator devices |
US20100051089A1 (en) * | 2008-09-02 | 2010-03-04 | Qualcomm Mems Technologies, Inc. | Light collection device with prismatic light turning features |
US8358266B2 (en) | 2008-09-02 | 2013-01-22 | Qualcomm Mems Technologies, Inc. | Light turning device with prismatic light turning features |
WO2010044901A1 (en) * | 2008-10-16 | 2010-04-22 | Qualcomm Mems Technologies, Inc. | Monolithic imod color enhanced photovoltaic cell |
US8270056B2 (en) | 2009-03-23 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with openings between sub-pixels and method of making same |
US8736590B2 (en) | 2009-03-27 | 2014-05-27 | Qualcomm Mems Technologies, Inc. | Low voltage driver scheme for interferometric modulators |
US20100302218A1 (en) | 2009-05-29 | 2010-12-02 | Qualcomm Mems Technologies, Inc. | Illumination devices and methods of fabrication thereof |
US8270062B2 (en) | 2009-09-17 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with at least one movable stop element |
US8488228B2 (en) | 2009-09-28 | 2013-07-16 | Qualcomm Mems Technologies, Inc. | Interferometric display with interferometric reflector |
CN102834761A (zh) | 2010-04-09 | 2012-12-19 | 高通Mems科技公司 | 机电装置的机械层及其形成方法 |
US8848294B2 (en) | 2010-05-20 | 2014-09-30 | Qualcomm Mems Technologies, Inc. | Method and structure capable of changing color saturation |
CN103109315A (zh) | 2010-08-17 | 2013-05-15 | 高通Mems科技公司 | 对干涉式显示装置中的电荷中性电极的激活和校准 |
US9057872B2 (en) | 2010-08-31 | 2015-06-16 | Qualcomm Mems Technologies, Inc. | Dielectric enhanced mirror for IMOD display |
US8670171B2 (en) | 2010-10-18 | 2014-03-11 | Qualcomm Mems Technologies, Inc. | Display having an embedded microlens array |
US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
US8736939B2 (en) | 2011-11-04 | 2014-05-27 | Qualcomm Mems Technologies, Inc. | Matching layer thin-films for an electromechanical systems reflective display device |
KR20220149828A (ko) | 2021-04-30 | 2022-11-09 | 삼성전자주식회사 | 반도체 소자 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4448491A (en) * | 1979-08-08 | 1984-05-15 | Canon Kabushiki Kaisha | Image display apparatus |
GB2097581A (en) * | 1981-04-24 | 1982-11-03 | Hitachi Ltd | Shielding semiconductor integrated circuit devices from light |
JPS58125084A (ja) * | 1982-01-21 | 1983-07-25 | 株式会社東芝 | 液晶表示装置およびその製造方法 |
JPS58222546A (ja) * | 1982-04-13 | 1983-12-24 | Citizen Watch Co Ltd | 半導体装置 |
JPS595228A (ja) * | 1982-07-01 | 1984-01-12 | Asahi Glass Co Ltd | 画像表示装置 |
US4833521A (en) * | 1983-12-13 | 1989-05-23 | Fairchild Camera & Instrument Corp. | Means for reducing signal propagation losses in very large scale integrated circuits |
US4710732A (en) * | 1984-07-31 | 1987-12-01 | Texas Instruments Incorporated | Spatial light modulator and method |
US5061049A (en) * | 1984-08-31 | 1991-10-29 | Texas Instruments Incorporated | Spatial light modulator and method |
JPS61144051A (ja) * | 1984-12-17 | 1986-07-01 | Mitsubishi Electric Corp | 半導体集積回路 |
EP0341003B1 (en) * | 1988-04-30 | 1994-08-31 | Sharp Kabushiki Kaisha | Thin film semiconductor device and liquid crystal display apparatus using thereof |
US5187551A (en) * | 1988-04-30 | 1993-02-16 | Sharp Kabushiki Kaisha | Thin film semiconductor device and liquid crystal display apparatus thereof for preventing irradiated light from reaching the semiconductor layers |
JPH02135786A (ja) * | 1988-11-16 | 1990-05-24 | Mitsubishi Electric Corp | 太陽電池セル |
GB2245741A (en) * | 1990-06-27 | 1992-01-08 | Philips Electronic Associated | Active matrix liquid crystal devices |
US5273910A (en) * | 1990-08-08 | 1993-12-28 | Minnesota Mining And Manufacturing Company | Method of making a solid state electromagnetic radiation detector |
US5050123A (en) * | 1990-11-13 | 1991-09-17 | Intel Corporation | Radiation shield for EPROM cells |
US5262353A (en) * | 1992-02-03 | 1993-11-16 | Motorola, Inc. | Process for forming a structure which electrically shields conductors |
-
1992
- 1992-08-11 US US07/928,251 patent/US5818095A/en not_active Expired - Fee Related
-
1993
- 1993-07-14 DE DE69325213T patent/DE69325213T2/de not_active Expired - Fee Related
- 1993-07-14 EP EP93111282A patent/EP0582850B1/en not_active Expired - Lifetime
- 1993-07-27 CN CN93109152A patent/CN1041019C/zh not_active Expired - Fee Related
- 1993-07-31 KR KR1019930014809A patent/KR100277451B1/ko not_active IP Right Cessation
- 1993-08-10 JP JP19856393A patent/JPH06169102A/ja active Pending
-
1994
- 1994-03-28 TW TW083102683A patent/TW288212B/zh not_active IP Right Cessation
-
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- 1995-06-07 US US08/482,598 patent/US5597736A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1914538B (zh) * | 2004-02-03 | 2010-05-26 | Idc公司 | 具有集成式光学结构的空间光调制器 |
Also Published As
Publication number | Publication date |
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CN1041019C (zh) | 1998-12-02 |
JPH06169102A (ja) | 1994-06-14 |
EP0582850B1 (en) | 1999-06-09 |
DE69325213D1 (de) | 1999-07-15 |
KR940006276A (ko) | 1994-03-23 |
US5597736A (en) | 1997-01-28 |
DE69325213T2 (de) | 1999-11-25 |
EP0582850A1 (en) | 1994-02-16 |
KR100277451B1 (ko) | 2001-02-01 |
TW288212B (zh) | 1996-10-11 |
US5818095A (en) | 1998-10-06 |
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