CN1088765C - 等离子体处理装置 - Google Patents

等离子体处理装置 Download PDF

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CN1088765C
CN1088765C CN97115408A CN97115408A CN1088765C CN 1088765 C CN1088765 C CN 1088765C CN 97115408 A CN97115408 A CN 97115408A CN 97115408 A CN97115408 A CN 97115408A CN 1088765 C CN1088765 C CN 1088765C
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reticulation
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heat transfer
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石田敏道
山田雄一郎
滝泽贵博
田辺浩
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Panasonic Holdings Corp
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Abstract

本发明等离子体处理装置，包括减压室、一对面对面的电极、处理气体供给机构、高频电源以及对设置在一电极上被处理物进行加热的加热机构，另一电极侧由温度调节构件、兼作电极用气体喷出板、夹于此两者间的格子状传热构件构成，该传热构件具有使供给的处理气体均压化、从气体喷出孔喷出的气体均压化空间，具有能将电极用气体喷出板的热量传至温度调节构件、能不使电极兼用气体喷出板产生热变形、可对大型基板进行等离子体处理的效果。

Description

等离子体处理装置
本发明涉及用等离子CVD法即化学汽相沉积法进行在基板上形成薄膜的等离子体处理装置，特别涉及用等离子CVD法进行在液晶用玻璃基板等大型基板上形成薄膜的等离子体处理装置。
传统的用等离子CVD法进行在基板上形成薄膜的等离子体处理装置的结构表示在后述图6中，在从真空排气口12进行真空排气的室1的内部的下部具有电气接地的下部电极4，在此下部电极4内设置可加热至例如约400℃的加热器3，将玻璃等组成的基板2载放在所述下部电极4上、且可被加热至规定温度。
室1的上部具有盖11，此盖11通过安装的绝缘体10，使兼作上部电极用的气体喷出板5位于上述下部电极4的上方，且保持与上述下部电极4平行。所述兼作上部电极用的气体喷出板5系由铝合金等构成，具有均匀分布的气体喷出孔5a。
在所述兼作上部电极用的气体喷出板5的上方设置被固定在安装在上述盖11上的上述绝缘体10上、为将处理气体导入的气体导入管6，在所述气体导入管6与所述兼作上部电极用的气体喷出板5间设置具有多个气体分散孔9a的气体分散板9，在所述气体分散板9与所述兼作上部电极用的气体喷出板间形成气体均压化空间9b、形成的气体均压化空间9b为使处理气体压力均匀，使处理气体从所述兼作上部电极用的气体喷出板5的多个气体喷出孔5a均匀地喷出。
高频电源8通过调整阻抗的耦合器7与上述气体导入管6、气体分散板9以及兼作上部电极用的气体喷出板5连接。
在进行等离子体处理时，当一面从兼作上部电极用的气体喷出板5将SiH4、NH3、N2、H2等处理气体喷出，一面通过高频电源8将高频电压加在兼作上部电极用的气体喷出板上时，在所述兼作上部电极用气体喷出板5与接地的下部电极4之间产生等离子、在基板2的表面上例如形成氮化膜等薄膜。
在上述传统结构中，在兼作上部电极用的气体喷出板5的下面的等离子发生面上为防止产生等离子时的异常放电而不能设置安装螺栓，此外，由于有必要形成为使处理气体均匀喷出的所述气体均压化空间9b，所述兼作上部电极用的气体喷出板5的中央附近的结构成为不能保持机械定形的结构。
此结构对于进行较小型基板的形成薄膜尚无问题，然而，近来要求增大形成薄膜的基板尺寸，因而有必要提供能对大型基板进行等离子体处理的装置。
但是，在上述传统结构中，由于不能使兼作上部电极用的气体喷出板5接受的来自约400℃的下部电极4的辐射热、以及来自处理中的等离子的热从兼作上部电极用的气体喷出板5的周边缘散出，当兼作上部电极用的气体喷出板5增大到一定程度以上，使在兼作上部电极用的气体喷出板5的中央附近因热量不能散出而温度上升至200-300℃，中央附近与周边缘部的温度差变大，因热膨胀率的不同而存在使兼作上部电极用的气体喷出板5产生变形、膨出的问题。当发生兼作上部电极用的气体喷出板5产生弯形、膨出时，使下部电极4与兼作上部电极用的气体喷出板5间的电极间的距离发生变化，从而产生在基板1上堆积的薄膜厚度以及薄膜特性均匀性低的问题。
本发明为了解决上述问题，目的在于提供使兼作上部电极用的气体喷出板不产生热变形，能进行大型基板的等离子体处理的等离子体处理装置。
为解决上述课题的本发明等离子体处理装置包括：容纳需进行等离子体处理的被处理物的减压的室；位于所述室内，为使供给的处理气体等离子化、处于面对面的一对电极；与所述面对面的一对电极中的一电极相连的处理气体供给机构与高频电源；以及设置在另一电极上，对上述被处理物进行加热的加热机构，其特点是，具有所述处理气体供给机构与高频电源的电极一侧由具有温度调节机构的温度调节构件，具有按等间隔形成多个气体喷出孔的兼作电极用的气体喷出板，以及夹于上述两者间的格子状传热构件来构成，该传热构件系为使从上述处理气体供给机构供给的处理气体均压化，按照格子状形成多个使从上述兼作电极用的气体喷出板喷出的气体均压化的空间，同时，能将所述兼作电极用的气体喷出板的热量传至上述温度调节构件上的格子状传热构件。
据此，本发明等离子体处理装置在兼作电极用的气体喷出板大型化并进行较大基板的等离子体处理场合，由于能使处理气体均匀地从所述兼作电极用的气体喷出板喷出，且通过格子状传热构件能将上述兼作电极用的气体喷出板的热量传递到温度调节构件上，使所述兼作电极用的气体喷出板的温度上升变小，能抑制上述兼作电极用的气体喷出板因热膨胀、膨出而引起的面对面电极间距离不均匀，能在大基板上形成厚度与特性均匀的薄膜。
此外，本发明等离子体处理装置，由于将格子状传热构件构成在格子状构件整体的中心部具有接受处理气体的气体入口，将格子状传热构件的多个气体均压化空间构成以格子状构件的全体中心部为对称中心，具有相同形状的空间，能使兼作电极用的气体喷出板的温度上升变小，能更进一步抑制因兼作电极用的气体喷出板的热膨胀、膨出引起的面对面电极间距离的不均匀，从而能进一步提高在大型基板上形成厚度与特性均均的薄膜的效果。
对附图的简单说明。
图1为表示本发明等离子体处理装置一实施例结构的侧剖视图，
图2为表示本发明等离子体处理装置一实施例的主要部分的分解立体图，
图3为表示本发明等离子体处理装置一实施例的主要部分的局部剖视图，
图4为表示本发明等离子体处理装置一实施例的主要部分的局部剖视图，
图5为表示本发明等离子体处理装置一实施例的主要部分的局部剖视图，
图6为表示传统等离子体处理装置结构的侧剖视图。
现参照附图1-5对本发明等离子体处理装置一实施例进行说明。
图1中，将内设加热器3、铸造铝合金制的下部电极4配置在从真空排气口12进行真空排气的室1的下部，且使其电气接地、把由玻璃等构成的基板2载放在此下部电极4上。此下部电极4具有由工作缸等(未图示)的驱动机构产生的升降功能。下部电极4因内设的加热器3、例如被加热至约为400℃，将载放的基板2加热至规定温度。
在室1的上部具有在其中央部形成开口部的上盖11，上盖11用第4螺栓30d且通过绝缘体10a、10b、10c使温度调节板106a、形状为格子状、在该格子间的空间形成气体均压化空间109a的传热构件109，以及其上具有多个气体喷出孔105a的兼作上部电极用的气体喷出板105保持固定。
现根据附图1-5对上述温度调节板106a、传热构件109、兼作上部电极用的气体喷出板105的详细结构和安装方法进行说明。
在具体表示的图2-5中，在铝合金制的兼作上部电极用的气体喷出板105上按等间隔设置为使处理气体均匀喷出的多个气体喷出孔105a。为使处理气体均匀地从这些等间隔的多个气体喷出孔105a喷出，需要在兼作上部电极用的气体喷出板105的上侧空间形成气体均压化空间109a，此外，为了不使在兼作上部电极用的气体喷出板105的中央部与其周边缘部间产生温度差，需要能使热量从兼作上部电极用的气体喷出板105的中央部散出，以下所示的传热构件109与温度调节板106a就是为满足这些必要性而设置的。
在图2-5中，铝合金制的传热构件109由传递来自兼作上部电极用的气体喷出板105的周边缘部热量的框部109b与传递来自兼作上部电极用的气体喷出板105的中央部热量的格子形状部109c组成。在所述框部109b与格子形状部109c间的空间构成气体均压化空间109a。并且，把传热构件109的中央作为点对称中心、将格子形状部109c形成点对称形的多个形状相同的气体均匀化空间109a，把传热构件109的上述中央部的对称中心作为气体入口106d的中心，当向各气体均压化空间109a供给处理气体时，使处理气体的压力达到均压化、从上述多个气体喷出孔105a均匀喷出处理气体。在此场合，如图3-图5所示，在气体喷出孔105a与传热构件109的格子形状部109c相重叠的部分设置作为处理气体通路的气体通过槽109d、这样，即使存在格子形状部109c，也能在兼作上部电极用的气体喷出板105的全面上按等间隔设置气体喷出孔105a。
在图1-5中，用第4螺栓30d、通过绝缘体10a、10b将铝合金制的温度调节板106a安装在上盖11的开口部的下侧。此外，温度调节板106a具有冷却水路106b，使从具有加热器与冷却机构的恒温循环槽106c来的冷却水经此冷却水路106b循环、例如，能将其维持在约80℃的规定温度。此外，将气体导入管106安装在温度调节板106a的中央部上，从此气体导入管106向上述传热构件109的中央部的气体入口106d供给处理气体。
接着，参照图1-5说明温度调节板106a与传热构件109以及兼作上部电极用的气体喷出板105的安装方法。
图1-5中，用第2螺栓30b、且利用设置在传热构件109上的通孔32b、设置在兼作上部电极用的气体喷出板105上的螺孔33b进行传热构件109与兼作上部电极用的气体喷出板105的固定。用此固定、成为使在兼作上部电极用的气体喷出板105上产生的热量不仅从其周边缘部、且大致从其全面传递到传热构件109。在此场合，不使螺孔33b穿通至兼作上部电极用的气体喷出板105的下面。
如上所述，在图1-5中，用第4螺栓30d，且通过绝缘体10a、10b将温度调节板106a安装在上盖11的开口部的下侧。在此场合，用第一O型圈31a确保室1的内部与外界间的气密性。
在图1-5中，用第1螺栓30a、且利用设置在温度调节板106a的中央部附近的通孔32a与设置在传热构件109的中央部附近的螺孔33a把如上所述用第2螺栓30b进行固定、兼作上部电极用的气体喷出板105与传热构件109固定在温度调节板106a上，进而，用第3螺栓30c、且利用设置在传热构件109的周边缘部上的通孔32c和设置在温度调节板106a的周边缘部上的螺孔(未图示)将传热构件109固定在温度调节板106a上、从而，使在兼作上部电极用的气体喷出板105上产生的热量通过传热构件109充分地传至温度调节板106a上。在此场合，用第二O型圈31b确保室1的内部与外界的气密性。在此状态，成为从气体导入管106向气体入口106d供给处理气体。
接着，用绝缘体10c和接地的铝合金制的保持器具10d对上述外周进行保持。
根据上述，即使兼作上部电极用的气体喷出板105接受来自约400℃的下部电极4的辐射热量以及来自发生等离子的热量，由于能将这些热量通过传热构件109向约为80℃的温度调节板106a上散出，维持约为100℃，而不发生热变形，即使对于大型基板，也能形成厚度与特性都均匀的薄膜。
此外，本实施例的结构材料使用了铝合金，然而也可以使用纯铝、即使是不锈钢等其它金属也具有同样效果。
根据本发明的等离子体处理装置，即使对于大型化的兼作上部电极用的气体喷出板，也能使处理气体从上述兼作上部电极用的气体喷出板均匀地喷出，且用传热构件防止上述兼作上部电极用的气体喷出板温度上升以及因温度上升引起的变形，具有对于被处理的大型基板，可获得形成膜厚与膜特性都均匀的薄膜的效果。

Claims (4)

1.一种等离子体处理装置，包括：容纳需进行等离子体处理的被处理物的减压的室；位于所述室内，为使供给的处理气体等离子化、处于面对面的一对电极；与所述面对面的一对电极的一电极相连的处理气体供给机构与高频电源；以及设置在另一电极上、对上述被处理物进行加热的加热机构，其特征在于，具有所述处理气体供给机构与高频电源的电极一侧由具有温度调节机构的温度调节构件、具有按等间隔形成多个气体喷出孔的兼作电极用的气体喷出板，以及夹于上述两者间的格子状传热构件构成，所述传热构件系为使从上述处理气体供给机构供给的处理气体均压化、按格子状形成多个使从上述兼作电极用的气体喷出板喷出的气体均压化的空间，同时，能将上述兼作电极用的气体喷出板的热量传至上述温度调节构件上的格子状传热构件。
2.根据权利要求1所述的装置，其特征在于，在所述格子状传热构件的格子状构件的整体的中心部设置接受处理气体的气体入口。
3.根据权利要求1所述的装置，其特征在于，在格子状传热构件的接近兼作电极用的气体喷出板的气体喷出孔的格子状部分上具有与该气体喷出孔相通的气体通过槽。
4.根据权利要求1所述的装置，其特征在于，所述格子状传热构件上形成的多个气体均压化空间为以格子状构件整体的中心为对称中心具有相同形状的空间。
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Families Citing this family (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3480271B2 (ja) * 1997-10-07 2003-12-15 東京エレクトロン株式会社 熱処理装置のシャワーヘッド構造
JP3283459B2 (ja) * 1997-12-17 2002-05-20 日本エー・エス・エム株式会社 半導体処理用の基板保持装置
US6892669B2 (en) * 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
US6433314B1 (en) 1998-04-08 2002-08-13 Applied Materials, Inc. Direct temperature control for a component of a substrate processing chamber
US6117245A (en) * 1998-04-08 2000-09-12 Applied Materials, Inc. Method and apparatus for controlling cooling and heating fluids for a gas distribution plate
US6309465B1 (en) * 1999-02-18 2001-10-30 Aixtron Ag. CVD reactor
JP4230596B2 (ja) 1999-03-12 2009-02-25 東京エレクトロン株式会社 薄膜形成方法
JP2000290777A (ja) * 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
JP3668079B2 (ja) 1999-05-31 2005-07-06 忠弘 大見 プラズマプロセス装置
US6916399B1 (en) 1999-06-03 2005-07-12 Applied Materials Inc Temperature controlled window with a fluid supply system
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
JP4220075B2 (ja) * 1999-08-20 2009-02-04 東京エレクトロン株式会社 成膜方法および成膜装置
JP3654142B2 (ja) * 2000-01-20 2005-06-02 住友電気工業株式会社 半導体製造装置用ガスシャワー体
JP3851489B2 (ja) 2000-04-27 2006-11-29 日本発条株式会社 静電チャック
JP4567148B2 (ja) * 2000-06-23 2010-10-20 東京エレクトロン株式会社 薄膜形成装置
KR100419756B1 (ko) * 2000-06-23 2004-02-21 아넬바 가부시기가이샤 박막 형성 장치
GB0025956D0 (en) * 2000-10-24 2000-12-13 Powell David J Improved method of measuring vacuum pressure in sealed vials
JP4791637B2 (ja) * 2001-01-22 2011-10-12 キヤノンアネルバ株式会社 Ｃｖｄ装置とこれを用いた処理方法
KR101004199B1 (ko) 2001-02-09 2010-12-24 도쿄엘렉트론가부시키가이샤 성막 장치
US6818096B2 (en) * 2001-04-12 2004-11-16 Michael Barnes Plasma reactor electrode
CN101866806B (zh) * 2001-06-01 2012-04-25 东京毅力科创株式会社 等离子体处理装置
KR100400044B1 (ko) * 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US20030106644A1 (en) * 2001-07-19 2003-06-12 Sirkis Murray D. Electrode apparatus and method for plasma processing
JP4236882B2 (ja) * 2001-08-01 2009-03-11 東京エレクトロン株式会社 ガス処理装置およびガス処理方法
US20030047282A1 (en) * 2001-09-10 2003-03-13 Yasumi Sago Surface processing apparatus
US20030124842A1 (en) * 2001-12-27 2003-07-03 Applied Materials, Inc. Dual-gas delivery system for chemical vapor deposition processes
US20040250763A1 (en) * 2002-01-11 2004-12-16 Ovshinsky Stanford R. Fountain cathode for large area plasma deposition
DE10211442A1 (de) * 2002-03-15 2003-09-25 Aixtron Ag Vorrichtung zum Abscheiden von dünnen Schichten auf einem Substrat
US20050081788A1 (en) * 2002-03-15 2005-04-21 Holger Jurgensen Device for depositing thin layers on a substrate
JP4102873B2 (ja) * 2002-03-29 2008-06-18 東京エレクトロン株式会社 プラズマ処理装置用電極板及びプラズマ処理装置
US6838114B2 (en) 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US7018517B2 (en) * 2002-06-21 2006-03-28 Applied Materials, Inc. Transfer chamber for vacuum processing system
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US7543547B1 (en) * 2002-07-31 2009-06-09 Lam Research Corporation Electrode assembly for plasma processing apparatus
US6955725B2 (en) * 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
CA2465879C (en) * 2002-08-30 2008-10-07 Sekisui Chemical Co., Ltd. Plasma processing apparatus
US20040052969A1 (en) * 2002-09-16 2004-03-18 Applied Materials, Inc. Methods for operating a chemical vapor deposition chamber using a heated gas distribution plate
US6946033B2 (en) * 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
JP3970815B2 (ja) * 2002-11-12 2007-09-05 シャープ株式会社 半導体素子製造装置
US20040142558A1 (en) * 2002-12-05 2004-07-22 Granneman Ernst H. A. Apparatus and method for atomic layer deposition on substrates
US6926775B2 (en) * 2003-02-11 2005-08-09 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
KR100490049B1 (ko) * 2003-04-14 2005-05-17 삼성전자주식회사 일체형 디퓨저 프레임을 가지는 ｃｖｄ 장치
US7335396B2 (en) 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US7601223B2 (en) * 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US7537662B2 (en) * 2003-04-29 2009-05-26 Asm International N.V. Method and apparatus for depositing thin films on a surface
JP4493932B2 (ja) * 2003-05-13 2010-06-30 東京エレクトロン株式会社 上部電極及びプラズマ処理装置
KR20060011887A (ko) * 2003-05-30 2006-02-03 에비자 테크놀로지, 인크. 가스 분산 시스템
US7235138B2 (en) 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7344755B2 (en) 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
JP2005072446A (ja) * 2003-08-27 2005-03-17 Chi Mei Electronics Corp プラズマ処理装置及び基板の表面処理装置
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
KR100901892B1 (ko) * 2003-09-03 2009-06-10 도쿄엘렉트론가부시키가이샤 가스 처리 장치 및 처리 가스 토출 구조체
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7647886B2 (en) 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US20050103267A1 (en) * 2003-11-14 2005-05-19 Hur Gwang H. Flat panel display manufacturing apparatus
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
GB0329460D0 (en) * 2003-12-19 2004-01-28 Oxford Instr Plasma Technology Apparatus and method for plasma processing
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
US7906393B2 (en) * 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US20060054280A1 (en) * 2004-02-23 2006-03-16 Jang Geun-Ha Apparatus of manufacturing display substrate and showerhead assembly equipped therein
US7584942B2 (en) * 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US20050223986A1 (en) * 2004-04-12 2005-10-13 Choi Soo Y Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US8317968B2 (en) * 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US8328939B2 (en) * 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8074599B2 (en) * 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US20060201074A1 (en) * 2004-06-02 2006-09-14 Shinichi Kurita Electronic device manufacturing chamber and methods of forming the same
CN101866828B (zh) * 2004-06-02 2013-03-20 应用材料公司 电子装置制造室及其形成方法
US7784164B2 (en) * 2004-06-02 2010-08-31 Applied Materials, Inc. Electronic device manufacturing chamber method
WO2006020424A2 (en) * 2004-08-02 2006-02-23 Veeco Instruments Inc. Multi-gas distribution injector for chemical vapor deposition reactors
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US20060108069A1 (en) * 2004-11-19 2006-05-25 Samsung Electronics Co., Ltd. Plasma reaction chamber and captive silicon electrode plate for processing semiconductor wafers
US20060288934A1 (en) * 2005-06-22 2006-12-28 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
US9520276B2 (en) 2005-06-22 2016-12-13 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
TW200721269A (en) * 2005-07-29 2007-06-01 Aviza Tech Inc Deposition apparatus for semiconductor processing
JP2007146252A (ja) * 2005-11-29 2007-06-14 Tokyo Electron Ltd 熱処理方法、熱処理装置及び記憶媒体
JP4826483B2 (ja) * 2007-01-19 2011-11-30 東京エレクトロン株式会社 プラズマ処理装置
US8733279B2 (en) * 2007-02-27 2014-05-27 Applied Materials, Inc. PECVD process chamber backing plate reinforcement
US8375890B2 (en) 2007-03-19 2013-02-19 Micron Technology, Inc. Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
US20090071406A1 (en) * 2007-09-19 2009-03-19 Soo Young Choi Cooled backing plate
US8152954B2 (en) * 2007-10-12 2012-04-10 Lam Research Corporation Showerhead electrode assemblies and plasma processing chambers incorporating the same
US8187414B2 (en) * 2007-10-12 2012-05-29 Lam Research Corporation Anchoring inserts, electrode assemblies, and plasma processing chambers
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
MY166000A (en) * 2007-12-19 2018-05-21 Lam Res Corp A composite showerhead electrode assembly for a plasma processing apparatus
WO2009078923A2 (en) 2007-12-19 2009-06-25 Lam Research Corporation Film adhesive for semiconductor vacuum processing apparatus
KR101004927B1 (ko) * 2008-04-24 2010-12-29 삼성엘이디 주식회사 Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
US8679288B2 (en) 2008-06-09 2014-03-25 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8161906B2 (en) * 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8206506B2 (en) * 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8402918B2 (en) * 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
JP5777615B2 (ja) * 2009-07-15 2015-09-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｃｖｄチャンバの流れ制御機構
US8419959B2 (en) * 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
US9449859B2 (en) * 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
JP3160877U (ja) * 2009-10-13 2010-07-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
DE102010027168A1 (de) * 2010-07-14 2012-01-19 Leybold Optics Gmbh Verfahren und Vorrichtung zur Plasmabehandlung flacher Substrate
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US8470127B2 (en) 2011-01-06 2013-06-25 Lam Research Corporation Cam-locked showerhead electrode and assembly
KR101937115B1 (ko) 2011-03-04 2019-01-09 노벨러스 시스템즈, 인코포레이티드 하이브리드 세라믹 샤워헤드
CN103730315B (zh) * 2012-10-11 2016-03-09 中微半导体设备(上海)有限公司 一种改善等离子体刻蚀工艺的方法
CN103866281B (zh) * 2012-12-12 2016-12-07 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体增强化学气相沉积设备
US9610591B2 (en) * 2013-01-25 2017-04-04 Applied Materials, Inc. Showerhead having a detachable gas distribution plate
KR20150046966A (ko) * 2013-10-23 2015-05-04 삼성디스플레이 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US9911579B2 (en) 2014-07-03 2018-03-06 Applied Materials, Inc. Showerhead having a detachable high resistivity gas distribution plate
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
WO2019203975A1 (en) * 2018-04-17 2019-10-24 Applied Materials, Inc Heated ceramic faceplate
JPWO2019235282A1 (ja) * 2018-06-07 2021-06-17 東京エレクトロン株式会社 基板処理装置およびシャワーヘッド
JP2022507367A (ja) * 2018-11-20 2022-01-18 ラム リサーチ コーポレーション 半導体製造における二相冷却

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0926395A (ja) * 1995-05-11 1997-01-28 Shinoda:Kk 石留検査方法及び石留検査装置
JP4083874B2 (ja) * 1998-06-18 2008-04-30 浜松ホトニクス株式会社 シンチレータファイバプレート及び放射線イメージセンサ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0926395A (ja) * 1995-05-11 1997-01-28 Shinoda:Kk 石留検査方法及び石留検査装置
JP4083874B2 (ja) * 1998-06-18 2008-04-30 浜松ホトニクス株式会社 シンチレータファイバプレート及び放射線イメージセンサ

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