CN1100162C - Alpha-SiCoF film as insulating dielectric with low dielectric constant and its preparation - Google Patents
Alpha-SiCoF film as insulating dielectric with low dielectric constant and its preparation Download PDFInfo
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- CN1100162C CN1100162C CN00125465A CN00125465A CN1100162C CN 1100162 C CN1100162 C CN 1100162C CN 00125465 A CN00125465 A CN 00125465A CN 00125465 A CN00125465 A CN 00125465A CN 1100162 C CN1100162 C CN 1100162C
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- film
- sicof
- dielectric constant
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Abstract
The present invention relates to an alpha-SiCOF film as an insulating medium with low dielectric constant and a preparation method thereof. The existing similar products have the disadvantages of high dielectric constant, large film leakage current density, poor dielectric strength, poor electric stability and high production cost. The present invention uses a plasma strengthening chemical vapor deposition device to prepare the alpha-SiCOF film as an insulating medium with low dielectric constant and comprises the principal raw materials of poly fluoroalkylene oxide, tetreathylmetasilicate and plasma excited gas. The frequency of a plasma radio frequency excitation source is 13.56 MHz, power is from 50 to 150W, deposition temperature is from 150 to 400 DEG C, and then the film has good electronic property and is especially suitable for being used as insulating media of large scale integrated circuits.
Description
The present invention is dielectric a-SiCOF film of a kind of low-k and preparation method thereof, and this film is used for unicircuit manufacturing.
Along with development of integrated circuits, the dwindling of metal line interlamellar spacing and distance between centers of tracks, the interconnection parasitic capacitance of circuit with the unicircuit integrated level improve, characteristic dimension reduces and increase rapidly.Interconnect delay (RC delay) also because of the rapid increase of interconnection parasitic capacitance increases, has limited the arithmetic speed and the noise margin of unicircuit, causes the increase of circuit dynamic power consumption simultaneously.In super large-scale integration, replace traditional SiO with low-k (low k) film
2Can reduce interconnection parasitic capacitance effectively as the dielectric film, thereby make circuit interconnection postpone to reduce.Therefore many researchists are exploring the low film of some specific inductivity always.At present both at home and abroad the more low dielectric constant films of research has fluorinated silicon oxide (SiOF), unformed fluorocarbon-containing film (a-C: F) and Kapton (Polyimide) etc., but there is the production method complexity in these products, poor electrical performance, many deficiencies such as cost is higher especially are used on the large-scale integrated circuit defective with the poor adhesion of silicon chip.The objective of the invention is dielectric film of developing a kind of low-k and preparation method thereof.
The objective of the invention is to develop a kind of be used on the large-scale integrated circuit good electrical property, with dielectric film of the good low-k of silicon chip adhesivity and preparation method thereof.
Low dielectric constant insulation medium of the present invention is the a-SiCOF film, its major ingredient is a non-crystalline silicon carbon oxygen fluorine, thick 50～the 300nm of this film, structure is the C-C key in the film, the C-F key, the Si-F key, the Si-O key, the C atom content is 15～25% in the film, the Si atom content is 17～24%, the F atom content is 6～10%, and the O atom content is 48～55%.There is not the H atom in the film.Because mixing of F atom and high-content C atom, the thin-film dielectric constant reduces a lot; Again owing to almost do not have the H atom, the Heat stability is good of film in the film; Si-O key in the film also can make film that the adhesivity of silicon chip is improved; Crosslinked and the undefined structure of C-C helps improving thin film stability and reduces specific inductivity in the film.Gained a-SiCOF thin-film dielectric constant is low, and film resiativity is big, the dielectric strength height, and electrical properties is stable, and adhesivity is good.Dielectric film SiO in existing unicircuit
2Specific inductivity be 4.1, and a-SiCOF thin-film dielectric constant of the present invention can be reduced to 2.6.
The present invention obtains low dielectric constant insulation medium a-SiCOF film with the plasma-reinforced chemical vapor deposition method.In CVD equipment, increase the device that plasma generator all can be used as the inventive method.Can produce plasma between circular plate electrode in plasma-reinforced chemical vapor deposition equipment among the present invention, existing plasma radiofrequency driving source range of frequency all can be used.Plasma radiofrequency driving source frequency of the present invention is 13.56MHz, and power is 50～150W, and two interelectrode distances are 8～14mm, and deposition temperature is 150 ℃～400 ℃.Plasma reaction chamber air pressure is 70～90Pa.The deposit raw material is a polyfluoro naphthenic hydrocarbon, tetraethoxy, excitation of plasma gas.The flow of polyfluoro naphthenic hydrocarbon is 20～30sccm, and the flow of tetraethoxy is 20～40sccm, and the flow of excitation of plasma gas is 20～40sccm.
Above-mentioned deposit raw material polyfluoro naphthenic hydrocarbon such as tetrafluoro-methane (CF
4), hexafluoro cyclopropane (C
3F
6), Perfluorocyclobutane (C
4F
8) etc.Excitation of plasma gas such as oxygen (O
2), argon gas (Ar) etc.
Contain the C-C key, C-F key, Si-F key, Si-O key in the film that obtains by the aforesaid method deposit.
The deposit raw material can obtain the film of specific inductivity 2.6 with Perfluorocyclobutane or tetrafluoro-methane, and the good a-SiCOF film of silicon chip adhesion property of electrical properties temperature such as dielectric strength height.
Excitation of plasma gas of the present invention all can obtain good result with oxygen or argon gas.Owing to oxygen and argon gas reasonable price, be easy to get, therefore help the popularization of suitability for industrialized production.
Along with the development of super large-scale integration, the increase of interconnect delay, film of the present invention is specially adapted to replace traditional SiO in the super large-scale integration production
2Film can very reduce interconnection parasitic capacitance effectively.
Film of the present invention has the following advantages: 1) specific inductivity is low, can be reduced to about 2.6; 2) the film leakage current density reduces, and is 139pA/cm under the field intensity of 5V/ μ m
23) dielectric strength height can reach about 10.4MV/cm; 4) film electricity stable in properties, heat decomposition temperature can not absorb moisture more than 550 ℃ in air; 5) film adhesivity on silicon chip is good, combines closely with silicon chip, and unrelieved stress is little.Following table is a-SiCOF film and traditional Si O
2And the comparison of SiOF film performance.As can be seen, a-SiCOF thin-film dielectric constant can be reduced to 2.6, than SiOF film and SiO
2Film is all low.Simultaneously, the film leakage current density reduces, and dielectric strength raises.Because of the C-F key that contains hydrophobic nature does not absorb moisture in air, electrical properties is stable in the film.In addition, because of containing the Si-O key, the adhesivity of film on silicon chip improves.If in ultra-large CMOS unicircuit, use this film as the interconnection dielectric, circuit interconnection postpones and dynamic power consumption can reduce about 36.6% simultaneously, and film can combine well with the existing technology of unicircuit, can not influence the stability and the reliability of circuit because of using new film.
A-SiCOF film and traditional Si O
2And the performance of SiOF film relatively
A-SiCOF film SiOF film traditional Si O
2The close 125-140 155 152 degree (pA/cm of thin-film dielectric constant 2.35-2.90 3.5 4.1 leakage currents
2At 5V/ μ m) the good relatively poor good stability of dielectric strength 9.5-10.9 9.2 7.0 (MV/cm) electrical properties
Embodiment:
1. with Perfluorocyclobutane (C
4F
8), tetraethoxy (TEOS) and oxygen (O
2) mixed gas is raw material, deposition film in plasma-reinforced chemical vapor deposition (PECVD) equipment.Plasma radiofrequency driving source power stability is at 100W, and deposition temperature is 250 ℃.Interelectrode distance is 10mm.TEOS and O
2Flow be 30sccm, C
4F
8Flow is 30sccm.Plasma reaction chamber air pressure is 90Pa.Can obtain specific inductivity and be 2.6 a-SiCOF film, leakage current density is 139pA/cm under the field intensity of 5V/ μ m
2
2. with tetrafluoro-methane (CF
4), tetraethoxy (TEOS) and argon gas (Ar) mixed gas be raw material, deposition film in plasma-reinforced chemical vapor deposition (PECVD) equipment.Plasma radiofrequency driving source power stability is at 150W, and deposition temperature is 350 ℃.Interelectrode distance is 14mm.TEOS and O
2Flow be 20sccm, CF
4Flow is 20sccm.Plasma reaction chamber air pressure is 70Pa.Can obtain specific inductivity and be 2.8 a-SiCOF film, leakage current density is 106pA/cm under the field intensity of 5V/ μ m
2
Claims (5)
1. low dielectric constant insulation medium a-SiCOF film, major ingredient is a non-crystalline silicon carbon oxygen fluorine, it is characterized in that the thick 50～300nm of film, is the C-C key in the film, the C-F key, the Si-F key, the Si-O key, the C atom content is 15～25% in the film, the Si atom content is 17～24%, the F atom content is 6～10%, and the O atom content is 48～55%.
2. low dielectric constant insulation medium a-SiCOF film according to claim 1 is characterized in that this film is as the integrated circuit isolation dielectric film.
3. the preparation method of a low dielectric constant insulation medium a-SiCOF film, use the plasma-reinforced chemical vapor deposition method, it is characterized in that the plasma-reinforced chemical vapor deposition device produces plasma, deposition temperature is 150 ℃～400 ℃, plasma reaction chamber air pressure is 70～90Pa, the deposit raw material is polyfluoro naphthenic hydrocarbon, tetraethoxy, excitation of plasma gas, wherein the flow of polyfluoro naphthenic hydrocarbon is 20～30sccm, the flow of tetraethoxy is 20～40sccm, and the excitation of plasma gas flow is 20～40sccm.
4. the preparation method of low dielectric constant insulation medium a-SiCOF film according to claim 3 is characterized in that deposit is Perfluorocyclobutane or tetrafluoro-methane with raw material polyfluoro naphthenic hydrocarbon.
5. the preparation method of low dielectric constant insulation medium a-SiCOF film according to claim 3 is characterized in that deposit is that excitation of plasma gas is oxygen or argon gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00125465A CN1100162C (en) | 2000-09-26 | 2000-09-26 | Alpha-SiCoF film as insulating dielectric with low dielectric constant and its preparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00125465A CN1100162C (en) | 2000-09-26 | 2000-09-26 | Alpha-SiCoF film as insulating dielectric with low dielectric constant and its preparation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1288975A CN1288975A (en) | 2001-03-28 |
| CN1100162C true CN1100162C (en) | 2003-01-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00125465A Expired - Fee Related CN1100162C (en) | 2000-09-26 | 2000-09-26 | Alpha-SiCoF film as insulating dielectric with low dielectric constant and its preparation |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1698188B (en) * | 2003-01-31 | 2010-09-08 | 应用材料公司 | Method for depositing a low dielectric constant film |
| US7910475B2 (en) | 2006-02-16 | 2011-03-22 | Semiconductor Manufacturing International (Shanghai) Corporation | Method for forming low dielectric constant fluorine-doped layers |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6913796B2 (en) * | 2000-03-20 | 2005-07-05 | Axcelis Technologies, Inc. | Plasma curing process for porous low-k materials |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19904311A1 (en) * | 1998-02-06 | 1999-08-12 | Nat Semiconductor Corp | Carbon-doped silicon oxide thin film to produce an insulating thin film for a semiconductor device |
| US5981000A (en) * | 1997-10-14 | 1999-11-09 | International Business Machines Corporation | Method for fabricating a thermally stable diamond-like carbon film |
| US6051321A (en) * | 1997-10-24 | 2000-04-18 | Quester Technology, Inc. | Low dielectric constant materials and method |
-
2000
- 2000-09-26 CN CN00125465A patent/CN1100162C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5981000A (en) * | 1997-10-14 | 1999-11-09 | International Business Machines Corporation | Method for fabricating a thermally stable diamond-like carbon film |
| US6051321A (en) * | 1997-10-24 | 2000-04-18 | Quester Technology, Inc. | Low dielectric constant materials and method |
| DE19904311A1 (en) * | 1998-02-06 | 1999-08-12 | Nat Semiconductor Corp | Carbon-doped silicon oxide thin film to produce an insulating thin film for a semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1698188B (en) * | 2003-01-31 | 2010-09-08 | 应用材料公司 | Method for depositing a low dielectric constant film |
| US7910475B2 (en) | 2006-02-16 | 2011-03-22 | Semiconductor Manufacturing International (Shanghai) Corporation | Method for forming low dielectric constant fluorine-doped layers |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1288975A (en) | 2001-03-28 |
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