CN1113608A - 用于半导体器件的引线框架 - Google Patents

用于半导体器件的引线框架 Download PDF

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CN1113608A
CN1113608A CN95101193A CN95101193A CN1113608A CN 1113608 A CN1113608 A CN 1113608A CN 95101193 A CN95101193 A CN 95101193A CN 95101193 A CN95101193 A CN 95101193A CN 1113608 A CN1113608 A CN 1113608A
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lead frame
lead
lead portion
expansion
die base
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CN1129184C (zh
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辛永议
金京燮
任旻彬
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Samsung Electronics Co Ltd
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Abstract

一种用于半导体器件的树脂模注引线框架，它具 有一个其上安放管芯的管芯底座，由键合线与键合焊 接区电连接的内引线和与印刷线路板电连接的外引 线，管芯底座和内引线由树脂模注，其特征是引线框 架由热膨胀系数与印刷线板上线路相近的金属制成， 且管芯底座和内引线的表面用金属包覆层覆盖。该 引线框架的外引线的热膨胀系数与印刷线路板的热 膨胀系数相近，从而可防止外引线与印刷线路板焊区 间的焊料连接点龟裂，提高了表面安装的可靠性。

Description

本发明涉及用于半导体器件的引线框架，特别是涉及能防止因引线框架的外引线和印刷电路板的焊区之间热膨胀系数的不同而引起的焊料连接点破裂的引线框架。
近年来，半导体器件的集成度愈来愈高，而且其存储容量、信号处理速度和功率急速增加。这一趋势加速了半导体器件封装技术的发展，因此，半导体器件封装的重要性已受到人们的关注。
半导体器件的高集成度以及存储器的增加还使得输入和输出接触端子的数量相应增加，继而也使引线的数目相应增加。因此，这些引线必须精细地布置。
为了适应精细设置间距的引线，封装技术最近的趋势是从使用双列直插式封装（DIP）的通孔（TH）型移向表面安装技术（SMT），后者使用小外形（small  outline）封装（SOP）和方板型封装（QEP）的鸥翼状引线，以及小外形J状弯曲封装和塑料有引线芯片载体（PLCC）的J状弯曲引线（如图1所示）。
常规的半导体器件是用这种方式封装的：把与电路图形集成在一起的管芯粘接到由铁镍合金制成的引线框架的管芯底座上，用键合线把管芯的键合焊接区与引线框架的内引线连接起来，用诸如环氧树脂模注化合物之类的绝缘模注化合物将内引线和管芯埋封住。用这种方法，只有引线框架的外引线伸出到模注树脂的外侧。
然后，用焊料糊剂把如此封装好的半导体器件经外引线焊到由银和铂形成的混合集成电路的电极焊接区或由铜构成的印刷线路板（PWB）的焊区上。
引线框架的引线通常都由铁镍合金制成，因为铁镍合金的机械强度、耐热或酸的性能，以及在模注树脂和键合线之间的粘接性能都比较好，尽管它们的导电性或导热性能不如铜。
在多芯片组件或混合器件技术中，具有由铁镍合金制成的引线框架的半导体封装被安装在印刷线路板的表面上，并经受诸如高温或高温循环试验之类的可靠性试验。
然而，如图1所示，印刷线路板的焊区11和引线框架的外引线（12）之间的焊料连接点（14）受到了由铜与铁镍合金间热膨胀系数的不同所引起的剪切应力。通常，用于制造引线框架外引线的铁镍合金和PWB的焊区以及PWB的热膨胀系数分别为4×10-6/℃、16×10-6/℃，以及15-17×10-6/℃。
特别是，在温度循环试验的情况下，累积的应力所造成的变形速率很高，因此，引线精细配置且焊接点面积被减小的这种半导体封装的可靠性是个问题。而这个问题在焊接点面积大到足以能容许因累积的应力所造成的变形的情况下是不存在的。
本发明的目的是提供一种由一种金属制成的半导体引线框架，这种金属的热膨胀系数与印刷线路板的焊区的相似。
本发明的另一个目的是提供一种用于半导体器件的树脂模注的引线框架，这种引线框架具有一其上安装管芯的管芯底座、通过键合线与管芯的键合焊接区电连接的内引线以及与印刷线路板电连接的外引线，所述管芯底座与内引线由树脂模注起来，其特征在于：
所述引线框架由一种热膨胀系数与印刷线路板上的线路的热膨胀系数相近的金属制成，且管芯底座和引线框架的内引线的表面覆盖有一层金属包覆层。
该形成在内引线和管芯底座的表面上的金属包覆层由铁镍或锡铅合金制成，其厚度为引线框架厚度的10%-40%。引线框架本身由铜构成。
因此，本发明的引线框架外引线的热膨胀系数与印刷线路板的热膨胀系数相近，故可防止引线框架的外引线和印刷线路板的焊区之间的焊接点区域内发生焊料连接点龟裂，并可提高表面安装封装的可靠性。
为了更全面地理解本发明及其优点，下面结合附图作详细说明。
图1示出了鸥翼状引线（左）和J状弯曲引线（右）类型的器件中引线框架的外引线与印刷线路板的焊区间的焊料连接点。
图2为使用本发明的引线框架的半导体封装的截面图。
参看图2，这是使用本发明引线框架的半导体封装的截面图，其中，半导体管芯（22）、键合线（23）、管芯底座（24）和引线框架（30）的内引线（26）被埋封于模注树脂（20）中，而引线框架（30）的外引线（28）伸出在模注树脂（20）之外。
引线框架（30）由管芯底座（24）、内引线（26）和外引线（28）构成。在本说明书中，内引线（26）指的是引线框架（30）被埋置在模注树脂（20）中的那部分引线，而外引线（28）指的是引线框架（30）伸出在模注树脂（20）之外的那部分。在内引线（26）和管芯底座（24）的表面上形成有由铁镍或锡铅合金构成的金属包覆层。这些合金的熔点等于或低于180℃。
金属包覆层（27）通过热压粘结到引线框架（30）埋置在模注树脂（20）中的那些部分上，即内引线（26）和管芯底座（24）。该包覆层的厚度范围为由铜制成的引线框架（30）的厚度的10-40%。
模注树脂（20）是任一种用于包封半导体器件的模注树脂，而且能由本领域的普通技术人员毫无困难地选用。
如上所述，本发明的引线框架具有热膨胀系数与印刷线路板的焊区的热膨胀系数一样的外引线（28），从而能够消除因热膨胀系数的不同而加在焊料连接点上的应力，因此能防止焊料连接点中发生龟裂。
埋置于模注树脂（20）之中的引线框架（30）的内引线（26）和管芯底座（24）的表面上形成的包覆层解除因内引线（或管芯底座）和模注树脂间的热膨胀系数不同而产生的应力。通过在引线框架这些被埋置部分的表面上形成一层金属包覆层，能够改善引线框架与模注树脂的粘结性能并防止水或杂质通过引线框架和模注树脂间的粘结界面侵入到封装内，这种现象在由铜制成的引线框架上因存在氧化层而未形成金属包覆层时有可能发生。
由此可知，本发明的引线框架有以下优点：防止因外引线和印刷线路板的管芯焊接区间的热膨胀系数的差异引起的焊料连接点龟裂，改善与模注树脂的粘结性，减少引线框架和模注树脂间的热膨胀系数的不同，因此，可防止根部断裂、封装剥离、龟裂或类似情况，改善了表面安装半导体器件的可靠性。
用在本领域中熟知的各种树脂涂覆具有该引线框架的表面安装型多芯片组件或混合器件，能够避免暴露在模注树脂之外的外引线的可能发生的腐蚀。
因此，本发明的引线框架适用于制造高安装密度的器件，例如多芯片组件或混合器件等。
尽管本发明只参照用铁镍合金或锡铅合金把被模注部分的上、下表面包覆住的引线框架进行了说明，但应该理解，只用这些合金包覆模注部分的上表面的引线框架也属于本发明的范畴。
此外，虽然就一个具体的较佳实施例描述了本发明，但本领域的普通技术人员可以由此得出各种变化和改型，我们认为本发明包括了所附权利要求书所包含的这些变化和改型。

Claims (5)

1、一种用于半导体器件的树脂模注的引线框架，具有一个在其上安放管芯的管芯底座、由键合线与管芯的键合焊接区电连接的内引线以及与印刷线路板电连接的外引线，所述管芯底座和内引线由树脂模注起来，其特征在于：
所述引线框架由热膨胀系数与印刷线路板的线路的热膨胀系数相近的金属制成，且该引线框架的管芯底座和内引线的表面用一金属包覆层覆盖。
2、如权利要求1所述的引线框架，其中，金属包覆层由铁镍合金或锡铅合金构成。
3、如权利要求2所述的引线框架，其中，所述合金的熔点等于或低于180℃。
4、如权利要求1所述的引线框架，其中，所述金属包覆层的厚度范围为引线框架厚度的10%-40%。
5、如权利要求1所述的引线框架，其中，所述引线框架由铜制成。
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CN1129184C (zh) 2003-11-26
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JP3169781B2 (ja) 2001-05-28
GB9500411D0 (en) 1995-03-01
US5844305A (en) 1998-12-01
JPH07263611A (ja) 1995-10-13
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