CN1115911A - 具有隔离晶体管的eeprom单元及其制造与操作方法 - Google Patents
具有隔离晶体管的eeprom单元及其制造与操作方法 Download PDFInfo
- Publication number
- CN1115911A CN1115911A CN95103807.9A CN95103807A CN1115911A CN 1115911 A CN1115911 A CN 1115911A CN 95103807 A CN95103807 A CN 95103807A CN 1115911 A CN1115911 A CN 1115911A
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- China
- Prior art keywords
- transistor
- isolated
- floating
- grid
- dielectric layer
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- Granted
Links
- 238000000034 method Methods 0.000 title claims description 36
- 238000002955 isolation Methods 0.000 title abstract description 7
- 238000007667 floating Methods 0.000 claims abstract description 95
- 239000010410 layer Substances 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 39
- 230000015654 memory Effects 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000011229 interlayer Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 230000008569 process Effects 0.000 description 7
- 239000002784 hot electron Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005641 tunneling Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000001439 Opuntia Species 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000013642 negative control Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/225,868 US5471422A (en) | 1994-04-11 | 1994-04-11 | EEPROM cell with isolation transistor and methods for making and operating the same |
US225,868 | 1994-04-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1115911A true CN1115911A (zh) | 1996-01-31 |
CN1038080C CN1038080C (zh) | 1998-04-15 |
Family
ID=22846582
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN95103807A Expired - Fee Related CN1038080C (zh) | 1994-04-11 | 1995-03-31 | 具有隔离晶体管的eeprom单元及其制造与操作方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US5471422A (zh) |
EP (1) | EP0676811B1 (zh) |
JP (1) | JP3055426B2 (zh) |
KR (1) | KR100198911B1 (zh) |
CN (1) | CN1038080C (zh) |
DE (1) | DE69527388T2 (zh) |
TW (1) | TW262593B (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1305130C (zh) * | 2003-12-01 | 2007-03-14 | 联华电子股份有限公司 | 一种非挥发性存储器及其运作方法 |
CN1321461C (zh) * | 2001-07-23 | 2007-06-13 | 精工爱普生株式会社 | 非易失性半导体存储装置 |
CN101170064B (zh) * | 2006-10-23 | 2010-05-12 | 上海华虹Nec电子有限公司 | 闪存工艺高压栅氧和隧穿氧化层形成方法 |
CN102088000B (zh) * | 2009-12-04 | 2013-03-27 | 中芯国际集成电路制造(上海)有限公司 | Eeprom的存储单元及其制造方法 |
CN104716203A (zh) * | 2015-03-23 | 2015-06-17 | 上海华力微电子有限公司 | 一种浮栅闪存器件及其编译方法 |
CN106298677A (zh) * | 2015-06-12 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体存储器及其制造方法 |
CN108022930A (zh) * | 2016-10-28 | 2018-05-11 | 格芯公司 | 形成半导体器件结构的方法以及半导体器件结构 |
CN108806751A (zh) * | 2017-04-26 | 2018-11-13 | 中芯国际集成电路制造(上海)有限公司 | 多次可程式闪存单元阵列及其操作方法、存储器件 |
CN109545263A (zh) * | 2017-09-20 | 2019-03-29 | 意法半导体(鲁塞)公司 | 紧凑型eeprom存储器单元 |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5903494A (en) * | 1994-03-30 | 1999-05-11 | Sgs-Thomson Microelectronics S.A. | Electrically programmable memory cell |
US5429971A (en) * | 1994-10-03 | 1995-07-04 | United Microelectronics Corporation | Method of making single bit erase flash EEPROM |
US5637902A (en) * | 1996-01-16 | 1997-06-10 | Vlsi Technology, Inc. | N-well resistor as a ballast resistor for output MOSFET |
US5706228A (en) * | 1996-02-20 | 1998-01-06 | Motorola, Inc. | Method for operating a memory array |
KR100217900B1 (ko) * | 1996-04-01 | 1999-09-01 | 김영환 | 플래쉬 메모리 셀의 프로그램 방법 |
TW334581B (en) * | 1996-06-04 | 1998-06-21 | Handotai Energy Kenkyusho Kk | Semiconductor integrated circuit and fabrication method thereof |
US5936889A (en) * | 1996-07-12 | 1999-08-10 | Lg Semicon Co., Ltd. | Array of nonvolatile memory device and method for fabricating the same |
US5729493A (en) * | 1996-08-23 | 1998-03-17 | Motorola Inc. | Memory suitable for operation at low power supply voltages and sense amplifier therefor |
US5740109A (en) * | 1996-08-23 | 1998-04-14 | Motorola, Inc. | Non-linear charge pump |
US5721704A (en) * | 1996-08-23 | 1998-02-24 | Motorola, Inc. | Control gate driver circuit for a non-volatile memory and memory using same |
US5914514A (en) * | 1996-09-27 | 1999-06-22 | Xilinx, Inc. | Two transistor flash EPROM cell |
DE19650786A1 (de) * | 1996-12-06 | 1998-06-10 | Siemens Ag | EEPROM-Speicherzelle |
US6835979B1 (en) * | 1997-04-11 | 2004-12-28 | Altera Corporation | Nonvolatle memory |
US6159800A (en) * | 1997-04-11 | 2000-12-12 | Programmable Silicon Solutions | Method of forming a memory cell |
US6027974A (en) * | 1997-04-11 | 2000-02-22 | Programmable Silicon Solutions | Nonvolatile memory |
US6420753B1 (en) | 1997-06-30 | 2002-07-16 | Winbond Memory Laboratory | Electrically selectable and alterable memory cells |
US6146943A (en) * | 1997-07-09 | 2000-11-14 | Hyundai Electronics Industries Co., Ltd. | Method for fabricating nonvolatile memory device |
JP3586072B2 (ja) | 1997-07-10 | 2004-11-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JPH1187658A (ja) * | 1997-09-05 | 1999-03-30 | Mitsubishi Electric Corp | メモリセルおよびそれを備える不揮発性半導体記憶装置 |
US5981340A (en) * | 1997-09-29 | 1999-11-09 | Motorola, Inc. | Method of building an EPROM cell without drain disturb and reduced select gate resistance |
JP3378879B2 (ja) * | 1997-12-10 | 2003-02-17 | 松下電器産業株式会社 | 不揮発性半導体記憶装置及びその駆動方法 |
US6069382A (en) * | 1998-02-11 | 2000-05-30 | Cypress Semiconductor Corp. | Non-volatile memory cell having a high coupling ratio |
US6207991B1 (en) | 1998-03-20 | 2001-03-27 | Cypress Semiconductor Corp. | Integrated non-volatile and CMOS memories having substantially the same thickness gates and methods of forming the same |
US6124157A (en) * | 1998-03-20 | 2000-09-26 | Cypress Semiconductor Corp. | Integrated non-volatile and random access memory and method of forming the same |
US6114724A (en) * | 1998-03-31 | 2000-09-05 | Cypress Semiconductor Corporation | Nonvolatile semiconductor memory cell with select gate |
US6157574A (en) * | 1998-04-01 | 2000-12-05 | National Semiconductor Corporation | Erasable frohmann-bentchkowsky memory transistor that stores multiple bits of data |
US5862082A (en) * | 1998-04-16 | 1999-01-19 | Xilinx, Inc. | Two transistor flash EEprom cell and method of operating same |
US6327182B1 (en) | 1998-06-22 | 2001-12-04 | Motorola Inc. | Semiconductor device and a method of operation the same |
EP0969507B1 (en) * | 1998-06-30 | 2006-11-15 | STMicroelectronics S.r.l. | EEPROM memory cell manufacturing method |
US6232634B1 (en) | 1998-07-29 | 2001-05-15 | Motorola, Inc. | Non-volatile memory cell and method for manufacturing same |
JP2000068484A (ja) | 1998-08-19 | 2000-03-03 | Nec Corp | 不揮発性半導体記憶装置及びその製造方法並びに不揮発 性半導体記憶装置を内蔵したマイクロコンピュータ及び その製造方法 |
JP3344331B2 (ja) * | 1998-09-30 | 2002-11-11 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
EP0994513B1 (en) | 1998-10-15 | 2004-02-25 | STMicroelectronics S.r.l. | A simplified process for defining the tunnel area in semiconductor non-volatile non-aligned memory cells |
WO2000075994A1 (en) * | 1999-06-04 | 2000-12-14 | Koninklijke Philips Electronics N.V. | Semiconductor device with a non-volatile memory |
US6295229B1 (en) | 1999-07-08 | 2001-09-25 | Motorola Inc. | Semiconductor device and method of operating it |
US6307781B1 (en) * | 1999-09-30 | 2001-10-23 | Infineon Technologies Aktiengesellschaft | Two transistor flash memory cell |
DE19946884A1 (de) * | 1999-09-30 | 2001-04-12 | Micronas Gmbh | Eprom-Struktur für Halbleiterspeicher |
JP4666783B2 (ja) * | 2000-02-01 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6240015B1 (en) * | 2000-04-07 | 2001-05-29 | Taiwan Semiconductor Manufacturing Corporation | Method for reading 2-bit ETOX cells using gate induced drain leakage current |
TW529160B (en) * | 2000-12-22 | 2003-04-21 | Koninkl Philips Electronics Nv | Semiconductor device comprising an electrically erasable programmable read only memory and a flash-erasable programmable read only memory, and method of manufacturing such a semiconductor device |
JP2002237191A (ja) * | 2001-02-13 | 2002-08-23 | Seiko Instruments Inc | 相補型不揮発性記憶回路 |
JP2005512268A (ja) * | 2001-12-13 | 2005-04-28 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 2トランジスタ・フラッシュメモリ読み出し装置及び読み出し方法 |
JP2003188361A (ja) | 2001-12-20 | 2003-07-04 | Mitsubishi Electric Corp | ゲートアレイ構造の半導体集積回路 |
US6650563B2 (en) * | 2002-04-23 | 2003-11-18 | Broadcom Corporation | Compact and highly efficient DRAM cell |
US6876582B2 (en) * | 2002-05-24 | 2005-04-05 | Hynix Semiconductor, Inc. | Flash memory cell erase scheme using both source and channel regions |
US6949423B1 (en) * | 2003-11-26 | 2005-09-27 | Oakvale Technology | MOSFET-fused nonvolatile read-only memory cell (MOFROM) |
US20050145924A1 (en) * | 2004-01-07 | 2005-07-07 | I-Sheng Liu | Source/drain adjust implant |
US7052959B2 (en) * | 2004-01-08 | 2006-05-30 | Semiconductor Components Industries, Llc | Method of forming an EPROM cell and structure therefor |
TWI233691B (en) * | 2004-05-12 | 2005-06-01 | Powerchip Semiconductor Corp | Nonvolatile memory, nonvolatile memory array and manufacturing method thereof |
JP2006048749A (ja) * | 2004-07-30 | 2006-02-16 | Seiko Epson Corp | 不揮発性記憶装置及び不揮発性記憶装置のデータ書き込み方法 |
JP4683995B2 (ja) | 2005-04-28 | 2011-05-18 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
US7679130B2 (en) * | 2005-05-10 | 2010-03-16 | Infineon Technologies Ag | Deep trench isolation structures and methods of formation thereof |
US7236398B1 (en) * | 2005-08-31 | 2007-06-26 | Altera Corporation | Structure of a split-gate memory cell |
US7495279B2 (en) * | 2005-09-09 | 2009-02-24 | Infineon Technologies Ag | Embedded flash memory devices on SOI substrates and methods of manufacture thereof |
EP1837917A1 (en) * | 2006-03-21 | 2007-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
TWI416738B (zh) * | 2006-03-21 | 2013-11-21 | Semiconductor Energy Lab | 非揮發性半導體記憶體裝置 |
US7554854B2 (en) * | 2006-03-31 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for deleting data from NAND type nonvolatile memory |
US8022460B2 (en) * | 2006-03-31 | 2011-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
JP2008108977A (ja) * | 2006-10-26 | 2008-05-08 | Renesas Technology Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP2008118040A (ja) * | 2006-11-07 | 2008-05-22 | Sharp Corp | 不揮発性半導体記憶装置及びその製造方法とこれを用いた情報の書き込み方法 |
US20080112231A1 (en) * | 2006-11-09 | 2008-05-15 | Danny Pak-Chum Shum | Semiconductor devices and methods of manufacture thereof |
EP2109136A1 (en) * | 2007-01-29 | 2009-10-14 | Rohm Co., Ltd. | Flotox-type eeprom |
US7652329B2 (en) * | 2007-07-13 | 2010-01-26 | Semiconductor Components Industries, Llc | Vertical MOS transistor and method therefor |
US8067287B2 (en) * | 2008-02-25 | 2011-11-29 | Infineon Technologies Ag | Asymmetric segmented channel transistors |
US8295087B2 (en) * | 2008-06-16 | 2012-10-23 | Aplus Flash Technology, Inc. | Row-decoder and select gate decoder structures suitable for flashed-based EEPROM operating below +/− 10v BVDS |
JP5169773B2 (ja) * | 2008-11-27 | 2013-03-27 | 富士通セミコンダクター株式会社 | 半導体メモリ、半導体メモリの動作方法およびシステム |
US9070652B2 (en) * | 2012-04-13 | 2015-06-30 | United Microelectronics Corp. | Test structure for semiconductor process and method for monitoring semiconductor process |
FR3029343B1 (fr) | 2014-11-27 | 2018-03-30 | Stmicroelectronics (Rousset) Sas | Dispositif compact de memoire de type electriquement effacable et programmable |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4302766A (en) * | 1979-01-05 | 1981-11-24 | Texas Instruments Incorporated | Self-limiting erasable memory cell with triple level polysilicon |
DE3037744A1 (de) * | 1980-10-06 | 1982-05-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen einer monolithisch integrierten zwei-transistor-speicherzelle in mos-technik |
US4639893A (en) * | 1984-05-15 | 1987-01-27 | Wafer Scale Integration, Inc. | Self-aligned split gate EPROM |
IT1201834B (it) * | 1986-07-10 | 1989-02-02 | Sgs Microelettronica Spa | Dispositivo di memoria non volatile a semiconduttore |
JPH0777078B2 (ja) * | 1987-01-31 | 1995-08-16 | 株式会社東芝 | 不揮発性半導体メモリ |
JPS6418270A (en) * | 1987-07-13 | 1989-01-23 | Oki Electric Ind Co Ltd | Semiconductor memory device |
JPH07120719B2 (ja) * | 1987-12-02 | 1995-12-20 | 三菱電機株式会社 | 半導体記憶装置 |
JPH01248670A (ja) * | 1988-03-30 | 1989-10-04 | Toshiba Corp | 不揮発性半導体記憶装置ならびにその動作方法および製造方法 |
US5081054A (en) * | 1989-04-03 | 1992-01-14 | Atmel Corporation | Fabrication process for programmable and erasable MOS memory device |
US5104819A (en) * | 1989-08-07 | 1992-04-14 | Intel Corporation | Fabrication of interpoly dielctric for EPROM-related technologies |
US5045488A (en) * | 1990-01-22 | 1991-09-03 | Silicon Storage Technology, Inc. | Method of manufacturing a single transistor non-volatile, electrically alterable semiconductor memory device |
US5049515A (en) * | 1990-03-09 | 1991-09-17 | Intel Corporation, Inc. | Method of making a three-dimensional memory cell with integral select transistor |
US5021848A (en) * | 1990-03-13 | 1991-06-04 | Chiu Te Long | Electrically-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area and the method of fabricating thereof |
US5280446A (en) * | 1990-09-20 | 1994-01-18 | Bright Microelectronics, Inc. | Flash eprom memory circuit having source side programming |
JP2830447B2 (ja) * | 1990-10-15 | 1998-12-02 | 日本電気株式会社 | 半導体不揮発性記憶装置 |
FR2677481B1 (fr) * | 1991-06-07 | 1993-08-20 | Commissariat Energie Atomique | Procede de fabrication d'une cellule de memoire non volatile et cellule de memoire obtenue. |
US5216268A (en) * | 1991-09-23 | 1993-06-01 | Integrated Silicon Solution, Inc. | Full-featured EEPROM |
US5395779A (en) * | 1994-04-08 | 1995-03-07 | United Microelectronics Corporation | Process of manufacture of split gate EPROM device |
-
1994
- 1994-04-11 US US08/225,868 patent/US5471422A/en not_active Expired - Lifetime
-
1995
- 1995-02-20 TW TW084101543A patent/TW262593B/zh not_active IP Right Cessation
- 1995-03-16 KR KR1019950005408A patent/KR100198911B1/ko not_active IP Right Cessation
- 1995-03-24 JP JP9013495A patent/JP3055426B2/ja not_active Expired - Lifetime
- 1995-03-31 CN CN95103807A patent/CN1038080C/zh not_active Expired - Fee Related
- 1995-04-06 DE DE69527388T patent/DE69527388T2/de not_active Expired - Lifetime
- 1995-04-06 EP EP95105170A patent/EP0676811B1/en not_active Expired - Lifetime
- 1995-05-30 US US08/471,619 patent/US5646060A/en not_active Expired - Lifetime
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1321461C (zh) * | 2001-07-23 | 2007-06-13 | 精工爱普生株式会社 | 非易失性半导体存储装置 |
CN1305130C (zh) * | 2003-12-01 | 2007-03-14 | 联华电子股份有限公司 | 一种非挥发性存储器及其运作方法 |
CN101170064B (zh) * | 2006-10-23 | 2010-05-12 | 上海华虹Nec电子有限公司 | 闪存工艺高压栅氧和隧穿氧化层形成方法 |
CN102088000B (zh) * | 2009-12-04 | 2013-03-27 | 中芯国际集成电路制造(上海)有限公司 | Eeprom的存储单元及其制造方法 |
CN104716203B (zh) * | 2015-03-23 | 2017-11-10 | 上海华力微电子有限公司 | 一种浮栅闪存器件及其编译方法 |
CN104716203A (zh) * | 2015-03-23 | 2015-06-17 | 上海华力微电子有限公司 | 一种浮栅闪存器件及其编译方法 |
CN106298677A (zh) * | 2015-06-12 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体存储器及其制造方法 |
CN106298677B (zh) * | 2015-06-12 | 2019-05-28 | 中芯国际集成电路制造(上海)有限公司 | 半导体存储器及其制造方法 |
CN108022930A (zh) * | 2016-10-28 | 2018-05-11 | 格芯公司 | 形成半导体器件结构的方法以及半导体器件结构 |
CN108022930B (zh) * | 2016-10-28 | 2021-12-21 | 格芯美国公司 | 形成半导体器件结构的方法以及半导体器件结构 |
CN108806751A (zh) * | 2017-04-26 | 2018-11-13 | 中芯国际集成电路制造(上海)有限公司 | 多次可程式闪存单元阵列及其操作方法、存储器件 |
CN108806751B (zh) * | 2017-04-26 | 2021-04-09 | 中芯国际集成电路制造(上海)有限公司 | 多次可程式闪存单元阵列及其操作方法、存储器件 |
CN109545263A (zh) * | 2017-09-20 | 2019-03-29 | 意法半导体(鲁塞)公司 | 紧凑型eeprom存储器单元 |
US11696438B2 (en) | 2017-09-20 | 2023-07-04 | Stmicroelectronics (Rousset) Sas | Compact EEPROM memory cell with a gate dielectric layer having two different thicknesses |
CN109545263B (zh) * | 2017-09-20 | 2024-03-08 | 意法半导体(鲁塞)公司 | 紧凑型eeprom存储器单元 |
Also Published As
Publication number | Publication date |
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DE69527388D1 (de) | 2002-08-22 |
JP3055426B2 (ja) | 2000-06-26 |
KR100198911B1 (ko) | 1999-06-15 |
TW262593B (zh) | 1995-11-11 |
US5646060A (en) | 1997-07-08 |
EP0676811B1 (en) | 2002-07-17 |
DE69527388T2 (de) | 2002-11-28 |
CN1038080C (zh) | 1998-04-15 |
EP0676811A1 (en) | 1995-10-11 |
JPH07297304A (ja) | 1995-11-10 |
US5471422A (en) | 1995-11-28 |
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