CN1135660A - 光电转换器及其制造方法 - Google Patents

光电转换器及其制造方法 Download PDF

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CN1135660A
CN1135660A CN96101887A CN96101887A CN1135660A CN 1135660 A CN1135660 A CN 1135660A CN 96101887 A CN96101887 A CN 96101887A CN 96101887 A CN96101887 A CN 96101887A CN 1135660 A CN1135660 A CN 1135660A
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semiconductor device
lens combination
silicon
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W·施佩思
W·格拉曼
G·波纳
R·迪特里希
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Siemens AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Abstract

光电转换器包括一个接收光或发射光的半导体器件(6)，此半导体器件固定在底盘(1)上，在底盘上安装若干支承透镜系统(8)的间距定位片(7)。底盘、间距定位片和透镜系统用热膨胀系数大致相同的材料制成，就是说例如由硅和玻璃制成。多个这种装置可以作为一个单元来制造，然后再分割开。

Description

光电转换器及其制造方法
本发明波及一种光电转换器，该转换器是具有一个接收光或者发射光的半导体器件，具有一个固定半导体器件的底盘和具有一个与托盘连接在一起的间距定位片，该定位片用于把透镜系统光学对准半导体器件。
这类转换器例如由专利US4055761或JP5-218463已众所周知。这里的一个重要问题在于使转换器高效率运行。除半导体器件本身的特性外，这个目标是这样实现的，即光学上把透镜系统最佳地对准半导体器件。只有这样才可以把半导体器件发出的光高效率地耦合到光导纤维或者把由光导纤维出来的光耦合到半导体器件上。
此外，还必须保证光电转换器在运行期间保持最佳对准。在运行期间由于转换器升温可能导致失调从而使效率降低。
本发明的任务是，改进上述类型的光电转换器，使温度起伏对半导体器件与透镜系统的对准仅仅是有很小的影响。此外，还应给出一个制造这种类型光电转换器的简便方法。
上述第一个目标是这样实现的，即底盘、间距定位片和透镜系统的材料至少有接近的热膨胀系数。
借助附图1至5中给出的两个实施例进一步阐述本发明。这些附图是：
图1是第一实施例截面图；
图2是第二实施例截面图；
图3和图4是制造光电转换器的关键步骤；和
图5是安装上光电转换器的一种外壳。
图1所示光电转换器安装在底盘1上。底盘1的上表面具有凹槽2。凹槽2的两侧保留有几个凸梁3。在槽2中，在金属化层5的上面固定一个接收光或发射光的半导体器件6。这种器件例如可以是光电二极管或发光二极管(LED)或垂直腔表面发射激光器(VCSEL＝VerticalCavity Surface Emitter laser)。此外，金属化层5还用于半导体器件6的供电。另一个接触点位于半导体器件的上侧。
在凸梁3上例如同样固定着10个梁式间距定位片7。在定位片7上有一个透镜8用适合于材料的方法与其连接在一起。透镜系统与凹槽2的底部之间的距离大于半导体器件6与金属层5的厚度之和。
底盘1用硅片制成。硅片可以是多晶也可以是单晶。然而也可以采用另外的有适当热膨胀系数的材料代替硅片制造底盘1。
间距定位片7用玻璃制成，而透镜系统可以用硅或玻璃制造。主要的是，在半导体器件与透镜系统之间至少安置一个用玻璃制造的部件。其微小的热导值阻止由半导体器件6传导至底盘1的热量到达透镜系统。由于硅有良好的导热性，硅底盘优先用于发光半导体器件，因为这种器件转换的功率一般高于光接收器。光接收器用的底盘1可以用玻璃制造，间距定位片7可以用硅制造，透镜系统8可以用硅或玻璃制造。在两种情况下，只有当光具有能透过硅的波长时，用硅制造透镜系统才可能显示出优越性。当波长大于1.1μm时就属于此种情况。
底盘、间距定位片7和透镜系统8可以用粘接和/或焊接的方法连接在一起。然而，如果硅表面与玻璃表面相互重叠在一起，那么也可以用阳极键合法彼此连接。这种技术是众所周知的。该技术是，在温度例如400℃下，把需要键合在一起的部件上下压在一起，并且在玻璃上加上电压例如-1000V。因为这种连接技术重复性很好，当底盘1和透镜系统8是用玻璃制成时，间距定位片7最好用硅制造。在焊接或粘接间距定位片和透镜系统时，在这两个部件之间加入一层焊料或粘胶层9。焊料层例如可以是蒸发上的。
所用的玻璃类型应具有与硅相近的热膨胀系数。这里适用的玻璃例如有硼硅玻璃，这种玻璃在市场上例如有Corning公司的产品，其商标为“Pyrex”7740或schoft公司的产品，其商标为Tempax。
如果需要光电转换器11有较小的电容，那么最好不用硅底盘而采用玻璃底盘。然而，如果需要有较好的热传导而必须使用硅底盘时，那么此底盘可以制造得薄些并在其背面垫上一块玻璃片10(见图2)。此玻璃片10可以用阳极键合、焊接或粘接法与硅底盘连接在一起。
图1和图2示出的光电转换器11装入一个外壳内(见图5)，此外壳有底座14和盖15。相对调整转换器11，使其对准安装在盖15上的窗口16，并把转换器固定在底座14上。在窗口处装上一个光缆(未示出)，此光缆经耦合件20与外壳连接在一起。半导体器件本身经金属化层5和位于半导体器件上表面的接触点与两个接线端21和22电学连接，经这两个接线端输入工作电压或耦合出电信号。
为了同时制造多个图1或图2所示的光电转换器11，首先在玻璃片或硅片上制成凹槽2(见图3)。这些凹槽用于安装半导体器件并有相应长宽尺寸。在两个凹槽2之间留有一个凸梁。为了特定的目的，用另外的凹槽1 2把这些凸梁分开，从而形成凸梁3。这些凹槽2、12可以用例如光刻腐蚀方法或者用锯刀来制造。用锯刀锯出的凸梁3是彼此平行的，而用刻蚀法却可以把凸梁制成任意形状，例如栅状。
下一步是在凸梁3上放上一个由硅或玻璃制成的平板17并且如上所述用阳极键合、粘接或者焊接法与凸梁连接在一起。然后把平板17锯开，使其能够把位于凸梁3之间的、不与底盘1相连接的材料去掉。从而形成与凸梁3接合在一起的间距定位片7(见图4)。随后按照一个预先给定的网栅把半导体器件6固定在凹槽2内。
下一步骤是把一个由硅或玻璃制成的含有多个透镜系统的片子18放在间距定位片7上。透镜系统排列在片子18上的一个网栅内，此网栅与在底盘1上固定半导体器件6的网栅相当。透镜系统光学上对准半导体器件6并且随后把片子18用上述的阳极键合或用焊接方法与间距定位片7连接在一起。用这种方法形成一个由底盘1、半导体器件6、间距定位片7和片子18组成的含有多个半导体器件和透镜系统的复合体。然后，经位于凸梁3之间的锯槽13和经与此槽垂直的、与图面平行的其它锯槽把此复合体分开。如上所述，将这样制成的每一个单元11装入一个管壳内。
把一个样片分解成小的独立芯片的技术在半导体工艺中是很久以来普遍采用的，因而在分割复合体时同样可以采用。就是说复合体经切割、刀划和折断而分开。这里通常是把复合体固定在一个弹性粘贴薄膜上。然后，此薄膜可用作所有后续工艺的载体。
对上述方法进行改动也是可能的，首先是采用光刻法或机械法制造凹槽2和凸梁3然后如上所述中装上间距定位片。然后也可以用单个的透镜系统光学上对准半导体器件并与间距定位片7连接在一起而取代备有多个透镜系统的片子18。

Claims (10)

1.光电转换器具有一个接收光或者发射光的半导体器件、具有一个固定半导体器件的底盘和具有一个与底盘连接在一起的间距定位片，该定位片用于将透镜系统在光学上对准半导体器件，其特征在于，
底盘(1)、间距定位片(7)和透镜系统(8)是由具有至少相近的热膨胀系数的材料制成。
2.根据权利要求1所述的转换器，其特征在于，
底盘(1)和透镜系统(8)由硅制成并且间距定位片(7)由玻璃制成。
3.根据权利要求1所述的转换器，其特征在于，
底盘(1)由玻璃制成并且透镜系统(8)和间距定位片(7)由硅制成。
4.根据权利要求1至3其中之一所述的转换器，其特征在于，
底盘(1)备有金属层(5)，在金属层上固定半导体器件(6)。
5.根据权利要求1至4其中之一所述的转换器，其特征在于，
由玻璃制成的部件与由硅制成的部件用阳极键合法彼此连接。
6.根据权利要求1至5其中之一所述的转换器，其特征在于，各由玻璃或由硅制成的部件彼此焊接或粘接。
7.根据权利要求1至6其中之一所述的转换器，其特征在于，
半导体器件(6)位于底盘(1)的凹槽(2)内。
8.根据权利要求1至7其中之一所述的转换器，其特征在于，
底盘(1)由硅制成并且底盘(1)在安装半导体器件(6)相反的一侧与玻璃片(10)连接。
9.根据权利要求1所述的光电转换器制造方法，其特征在于：
a)在底盘(1)内装载半导体器件(6)的凹槽(2)是这样制造的，即在每个凹槽的一侧至少保留一个凸梁(3)，
b)在凸梁上放置一个大小与底盘(1)相同的平板(17)并与凸梁(3)用适合材料的方法连接在一起，
c)去掉平板(17)在凸梁(3)之间的部分，从而形成与底盘(1)连接在一起的间距定位片(7)，
d)按照预先设计的网栅在凹槽(2)内装入半导体器件(6)并与底盘(1)连接在一起，
e)在载体上安置另一块板(18)，此板含有与半导体器件数量相当的透镜系统(8)，这些透镜系统按照相同的网栅安置在此板上，
f)此板(18)相对于载体这样调整，使每一个透镜系统各对准一个半导体器件，
g)此板(18)被固定在载体上，
h)由底盘、半导体器件、间距定位片和另一块板所组成的复合体经第一平行切口(13)和与此垂直的第二切口所分开从而形成单元(11)，这些单元各含有一个底盘(1)、一个半导体器件(6)、若干间距定位片(7)和一个透镜系统(8)。
10.根据权利要求9所述的方法，其特征在于，
每个单元(11)都装入一个气密的管壳(14、15)内。
CN96101887A 1995-03-08 1996-03-08 光电转换器及其制造方法 Pending CN1135660A (zh)

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US7592680B2 (en) 2005-09-29 2009-09-22 Visera Technologies Company Ltd. Wafer level image module
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US11828993B2 (en) 2018-12-17 2023-11-28 Hisense Broadband Multimedia Technologies Co., Ltd. Optical sub-module and optical module

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080136955A1 (en) * 1996-09-27 2008-06-12 Tessera North America. Integrated camera and associated methods
AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
DE19803936A1 (de) * 1998-01-30 1999-08-05 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Ausdehnungskompensiertes optoelektronisches Halbleiter-Bauelement, insbesondere UV-emittierende Leuchtdiode und Verfahren zu seiner Herstellung
US6710348B1 (en) * 1998-06-30 2004-03-23 Robert Bosch Gmbh Apparatus for sensing electromagnetic radiation
DE19958229B4 (de) * 1998-12-09 2007-05-31 Fuji Electric Co., Ltd., Kawasaki Optisches Halbleiter-Sensorbauelement
US6683325B2 (en) * 1999-01-26 2004-01-27 Patent-Treuhand-Gesellschaft-für Elektrische Glühlampen mbH Thermal expansion compensated opto-electronic semiconductor element, particularly ultraviolet (UV) light emitting diode, and method of its manufacture
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
US20070181781A1 (en) * 2001-03-06 2007-08-09 Digital Optics Corporation Integrated optical transceiver
US20040041081A1 (en) * 2002-08-30 2004-03-04 Feldman Michael R. Integrated optical transceiver and related methods
JP3858537B2 (ja) * 1999-11-02 2006-12-13 富士ゼロックス株式会社 基板接合方法、接合体、インクジェットヘッド、および画像形成装置
IL133453A0 (en) * 1999-12-10 2001-04-30 Shellcase Ltd Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
US6674775B1 (en) 2000-02-18 2004-01-06 Jds Uniphase Corporation Contact structure for semiconductor lasers
US20040120371A1 (en) * 2000-02-18 2004-06-24 Jds Uniphase Corporation Contact structure for a semiconductor component
US7842914B2 (en) * 2000-03-06 2010-11-30 Tessera North America, Inc. Optoelectronic package, camera including the same and related methods
US6759687B1 (en) * 2000-10-13 2004-07-06 Agilent Technologies, Inc. Aligning an optical device system with an optical lens system
KR100393057B1 (ko) * 2000-10-20 2003-07-31 삼성전자주식회사 마이크로 렌즈 일체형 표면광 레이저
US6798931B2 (en) * 2001-03-06 2004-09-28 Digital Optics Corp. Separating of optical integrated modules and structures formed thereby
JP2002290842A (ja) * 2001-03-23 2002-10-04 Sanyo Electric Co Ltd 固体撮像素子の製造方法
DE10118630A1 (de) * 2001-04-12 2002-10-17 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Verfahren zur Herstellung eines optoelektronischen Halbleiter-Bauelements
FR2824955B1 (fr) * 2001-05-18 2004-07-09 St Microelectronics Sa Boitier semi-conducteur optique blinde
WO2003027743A1 (de) * 2001-09-14 2003-04-03 Infineon Technologies Ag Sende- und/oder empfangsanordnung zur optischen signalübertragung
DE10146498C2 (de) * 2001-09-21 2003-11-20 Arnold Glaswerke Photovoltaik-Isolierverglasung
US7343535B2 (en) 2002-02-06 2008-03-11 Avago Technologies General Ip Dte Ltd Embedded testing capability for integrated serializer/deserializers
US7074638B2 (en) 2002-04-22 2006-07-11 Fuji Photo Film Co., Ltd. Solid-state imaging device and method of manufacturing said solid-state imaging device
TW587842U (en) * 2002-05-30 2004-05-11 Hon Hai Prec Ind Co Ltd Optical package
KR100464965B1 (ko) * 2002-06-28 2005-01-06 삼성전기주식회사 이미지 센서 모듈 하우징
AU2003250646A1 (en) * 2002-07-11 2004-02-02 Alfalight, Inc. Thermal barrier for an optical bench
EP1942522A3 (en) * 2002-07-29 2009-11-11 FUJIFILM Corporation Solid-state imaging device and method of manufacturing the same
CN100550430C (zh) * 2002-09-09 2009-10-14 皇家飞利浦电子股份有限公司 半导体器件及其制造方法
US7564496B2 (en) * 2002-09-17 2009-07-21 Anteryon B.V. Camera device, method of manufacturing a camera device, wafer scale package
US7033664B2 (en) 2002-10-22 2006-04-25 Tessera Technologies Hungary Kft Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
WO2004050023A2 (en) * 2002-11-27 2004-06-17 Dmi Biosciences, Inc. Treatment of diseases and conditions mediated by increased phosphorylation
DE10308048A1 (de) * 2003-02-26 2004-09-09 Abb Research Ltd. Verfahren zur Herstellung von Trägerelementen
JP4115859B2 (ja) * 2003-02-28 2008-07-09 株式会社日立製作所 陽極接合方法および電子装置
EP2596948B1 (en) 2003-03-10 2020-02-26 Toyoda Gosei Co., Ltd. Method of making a semiconductor device
US20050063431A1 (en) * 2003-09-19 2005-03-24 Gallup Kendra J. Integrated optics and electronics
US7520679B2 (en) 2003-09-19 2009-04-21 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Optical device package with turning mirror and alignment post
US6953990B2 (en) * 2003-09-19 2005-10-11 Agilent Technologies, Inc. Wafer-level packaging of optoelectronic devices
US6982437B2 (en) * 2003-09-19 2006-01-03 Agilent Technologies, Inc. Surface emitting laser package having integrated optical element and alignment post
US6900509B2 (en) * 2003-09-19 2005-05-31 Agilent Technologies, Inc. Optical receiver package
US6998691B2 (en) * 2003-09-19 2006-02-14 Agilent Technologies, Inc. Optoelectronic device packaging with hermetically sealed cavity and integrated optical element
FR2861217B1 (fr) * 2003-10-21 2006-03-17 St Microelectronics Sa Dispositif optique pour boitier semi-conducteur optique et procede de fabrication.
DE10361650A1 (de) * 2003-12-30 2005-08-04 Osram Opto Semiconductors Gmbh Optoelektronisches Modul und Verfahren zu dessen Herstellung
EP1602953A1 (en) * 2004-05-31 2005-12-07 STMicroelectronics S.r.l. A package for housing at least one electro-optic element and the corresponding assembly method
JP3801601B2 (ja) * 2004-06-15 2006-07-26 シャープ株式会社 蓋部を備えた半導体ウェハの製造方法及び半導体装置の製造方法
TWI228326B (en) * 2004-06-29 2005-02-21 Cleavage Entpr Co Ltd Structure of light emitting diode and manufacture method of the same
JP4547569B2 (ja) * 2004-08-31 2010-09-22 スタンレー電気株式会社 表面実装型ｌｅｄ
KR100859036B1 (ko) 2004-09-14 2008-09-17 씨디엠 옵틱스 인코퍼레이티드 촬상 시스템 및 관련 방법
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
JP2007287967A (ja) * 2006-04-18 2007-11-01 Shinko Electric Ind Co Ltd 電子部品装置
DE102007039291A1 (de) * 2007-08-20 2009-02-26 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen
US20110192445A1 (en) * 2008-03-13 2011-08-11 Florian Solzbacher High precision, high speed solar cell arrangement to a concentrator lens array and methods of making the same
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
TW201010097A (en) * 2008-08-19 2010-03-01 Advanced Optoelectronic Tech Solar cell and manufacturing method therof
WO2010033211A1 (en) * 2008-09-18 2010-03-25 Tessera North America, Inc. Recessed optical surfaces
US8265487B2 (en) * 2009-07-29 2012-09-11 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Half-duplex, single-fiber (S-F) optical transceiver module and method
DE102009042479A1 (de) 2009-09-24 2011-03-31 Msg Lithoglas Ag Verfahren zum Herstellen einer Anordnung mit einem Bauelement auf einem Trägersubstrat und Anordnung sowie Verfahren zum Herstellen eines Halbzeuges und Halbzeug
US20120154945A1 (en) * 2010-12-16 2012-06-21 William Mark Hiatt Optical apertures and applications thereof
JP2012069977A (ja) * 2011-11-08 2012-04-05 Citizen Electronics Co Ltd 発光装置及び発光装置の製造方法
US9008139B2 (en) * 2013-06-28 2015-04-14 Jds Uniphase Corporation Structure and method for edge-emitting diode package having deflectors and diffusers
TWI735232B (zh) 2014-07-23 2021-08-01 新加坡商海特根微光學公司 光發射器或光偵測器模組及製造一光發射器或光偵測器模組之方法
US10439358B2 (en) * 2016-04-28 2019-10-08 Nichia Corporation Manufacturing method of light-emitting device
EP4033621B1 (en) 2019-09-20 2023-11-01 Nichia Corporation Light source device and method of manufacturing the same
EP4040614A4 (en) * 2019-09-30 2023-11-01 Kyocera Corporation HOUSING FOR MOUNTING PHOTONIC DEVICE AND ELECTRONIC DEVICE
EP4182747A1 (en) * 2020-07-20 2023-05-24 Apple Inc. Photonic integrated circuits with controlled collapse chip connections
EP3971543B1 (en) * 2020-09-17 2024-02-07 Lynred Infrared detector forming method and associated infrared detector

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59596Y2 (ja) * 1975-03-14 1984-01-09 株式会社ニコン ロシウツケイノジユコウキ
JPS5946434B2 (ja) * 1978-01-10 1984-11-12 キヤノン株式会社 半導体レ−ザ装置
US4511755A (en) * 1982-05-17 1985-04-16 Kei Mori Solar ray collection apparatus
US5274456A (en) * 1987-12-28 1993-12-28 Hitachi, Ltd. Semiconductor device and video camera unit using it and their manufacturing method
DE3833096A1 (de) * 1988-09-29 1990-04-05 Siemens Ag Optische koppelanordnung
JPH0732208B2 (ja) * 1989-10-31 1995-04-10 三菱電機株式会社 半導体装置
JP3191823B2 (ja) * 1992-02-03 2001-07-23 住友電気工業株式会社 半導体受光装置
JPH0463669U (zh) * 1990-10-12 1992-05-29
US5167724A (en) * 1991-05-16 1992-12-01 The United States Of America As Represented By The United States Department Of Energy Planar photovoltaic solar concentrator module
JPH0667115A (ja) * 1992-08-20 1994-03-11 Kyocera Corp 画像装置
JP2975501B2 (ja) * 1993-05-17 1999-11-10 京セラ株式会社 画像装置
US5617131A (en) * 1993-10-28 1997-04-01 Kyocera Corporation Image device having a spacer with image arrays disposed in holes thereof

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6893941B2 (en) 2001-03-21 2005-05-17 Canon Kabushiki Kaisha Semiconductor device and its manufacture method
US8524521B2 (en) 2005-09-29 2013-09-03 Visera Technologies Company Limited Method for making wafer level image module
US7592680B2 (en) 2005-09-29 2009-09-22 Visera Technologies Company Ltd. Wafer level image module
WO2009052764A1 (fr) 2007-10-19 2009-04-30 Ren Lou Appareillage de réaction composite et procédé chimique de production utilisant celui-ci
CN102103235B (zh) * 2009-12-18 2012-06-27 国碁电子(中山)有限公司 光收发器及其制造方法
CN102375185B (zh) * 2010-08-20 2013-11-13 国碁电子(中山)有限公司 光收发器及其制造方法
CN102375185A (zh) * 2010-08-20 2012-03-14 国碁电子(中山)有限公司 光收发器及其制造方法
CN103926658A (zh) * 2013-01-14 2014-07-16 鸿富锦精密工业（深圳）有限公司 光通讯模组
CN109407233A (zh) * 2018-12-17 2019-03-01 青岛海信宽带多媒体技术有限公司 一种光学次模块及光模块
CN109407235A (zh) * 2018-12-17 2019-03-01 青岛海信宽带多媒体技术有限公司 一种光学次模块及光模块
CN109407233B (zh) * 2018-12-17 2020-10-02 青岛海信宽带多媒体技术有限公司 一种光学次模块及光模块
US11828993B2 (en) 2018-12-17 2023-11-28 Hisense Broadband Multimedia Technologies Co., Ltd. Optical sub-module and optical module
CN110212402A (zh) * 2019-05-07 2019-09-06 上海灿瑞科技股份有限公司 雷射二极管装置

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DE19508222C1 (de) 1996-06-05
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KR960036157A (ko) 1996-10-28
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