CN1155993C - 用横向生长制备氮化镓层 - Google Patents

用横向生长制备氮化镓层 Download PDF

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CN1155993C
CN1155993C CNB99813628XA CN99813628A CN1155993C CN 1155993 C CN1155993 C CN 1155993C CN B99813628X A CNB99813628X A CN B99813628XA CN 99813628 A CN99813628 A CN 99813628A CN 1155993 C CN1155993 C CN 1155993C
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K·J·林斯库姆
T·格尔克
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D·B·汤姆森
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E·P·卡尔森
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P·拉雅戈帕尔
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R·F·达维斯
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Abstract

一种用掩模(109)图形化的碳化硅衬底(102)上的氮化镓基层(104)，它包括其中的窗口阵列，并被腐蚀穿过窗口阵列，以便在氮化镓基层中确定柱(106)及其间的沟槽(107)。每一个柱包含侧壁(105)和其上带有掩模的顶部。柱的侧壁被横向生长进入沟槽，从而形成氮化镓半导体层(108a)。在这一横向生长期间，掩模阻挡从柱顶的成核和垂直生长。因此，横向地生长进入沟槽，悬挂在柱的侧壁。柱的侧壁可横向生长进入沟槽，直至横向生长的侧壁在沟槽中接合，从而形成氮化镓半导体层。柱的侧壁横向生长可继续进行，致使氮化镓层垂直地生长穿过掩模中的窗口，并横向过生长到柱顶的掩模上，从而形成氮化镓半导体层(108b)。横向过生长能继续进行，直到生长的侧壁在掩模上接合，从而形成连续的氮化镓半导体层。在连续的氮化镓半导体层中可以制作微电子器件(110)。

Description

用横向生长制备氮化镓层
技术领域
本发明涉及微电子器件及制造方法，更确切地说是涉及到氮化镓半导体器件及其制造方法。
背景技术
用于包括但不限于晶体管、场发射器以及光电子器件的微电子器件的氮化镓，正受到广泛研究。可以理解，如此处所用的那样，氮化镓也包括诸如铝镓氮、铟镓氮以及铝铟镓氮之类的氮化镓合金。
制造氮化镓基微电子器件的主要问题是制备低缺陷密度的氮化镓半导体层。众所周知，缺陷密度的一个来源是其上生长氮化镓层的衬底。因此，尽管氮化镓层已被生长在蓝宝石衬底上，但已知，为减少缺陷密度而把氮化镓层生长在本身制作在碳化硅衬底上的氮化铝缓冲层上。尽管有这些进展，仍然希望继续降低缺陷密度。
还已知通过掩模中的窗口来制造氮化镓结构。例如，在制造场发射器阵列的过程中，已知在条形或圆形图形化衬底上选择性地生长氮化镓。见例如Nam等人的论文：″Selective Growth of GaN and Al0.2Ga0.8Non GaN/AlN/6H-SiC(0001)Multilayer Substrates Via OrganometallicVapor Phase Epitaxy″，Proceedings of the Materials Research Society，December 1996，和″Growth of GaN and Al0.2Ga0.8N on PatterenedSubstrates via Organometallic Vapor Phase Epitaxy″，Japanese Journalof Applied Physics，Vol.36，Part 2，No.5A，May 1997，pp.L532-L535.正如这些论文所披露的，在一定条件下，可能发生不希望的脊形生长或横向过度生长。
公布了的PCT申请WO 98/47170描述了一种生长氮化物半导体晶体的方法，该晶体的缺陷非常少并能够用作衬底，此方法包含下列步骤：制作配备有多个第一窗口的第一选择性生长掩模，用来选择性地暴露具有主平面且包括由不同于氮化物半导体的材料制成的不同类型的衬底的支座上的支持物表面；利用气态III族元素源和气态氮源，生长氮化物半导体，直到各个相邻窗口中从暴露于窗口的支持物表面生长的氮化物半导体晶体部分在选择性生长掩模的上表面上彼此接合。
发明内容
因此，本发明的一个目的在于提供制备氮化镓半导体层的改进方法，以及如此制造的改进的氮化镓层。
本发明的另一目的在于提供制造能具有低缺陷密度的氮化镓半导体层的方法，以及如此制造的氮化镓半导体层。
根据本发明，借助于用其中包含窗口阵列的掩模来掩蔽碳化硅衬底上的氮化镓基层，并通过窗口阵列来腐蚀氮化镓基层，从而确定氮化镓基层中的多个柱及其间的多个沟槽，而提供了这些和其它的目的。每一个柱包含侧壁和其上带有掩模的顶部。柱的侧壁被横向生长进入沟槽，从而形成氮化镓半导体层。在此横向生长期间，掩模阻止来自柱顶的成核和垂直生长。因此，横向生长进入沟槽，从柱侧壁悬挂下来。这种生长形式按拉丁文“悬挂”之意，在此被称为悬挂外延(pendeoepitaxy)。在氮化镓半导体层中可以制作微电子器件。
根据本发明的另一方面，柱侧壁被横向生长进入沟槽，直到横向生长的侧壁在沟槽中接合，从而形成氮化镓半导体层。从柱侧壁的横向生长可继续进行，使氮化镓垂直生长通过掩模中的窗口，进而横向生长到柱顶掩模上，从而形成氮化镓半导体层。该横向生长能够继续，直到生长的侧壁在掩模上接合，从而形成连续的氮化镓半导体层。在此连续的氮化镓半导体层中可以制作微电子器件。
已经发现，根据本发明，位错缺陷并不从柱的侧壁有明显的传播，所以横向生长的柱侧壁是相对无缺陷的。而且，在生长期间，已发现在柱顶明显的垂直生长被掩模所阻止，故相对无缺陷横向生长自侧壁发生至掩模上。柱顶的明显成核亦被优先阻止。因此，生长的氮化镓半导体层是相对无缺陷的。
从而，作为柱上的帽层的掩模的作用在于，强制有选择的氮化镓同质外延生长只发生在侧壁上。与氮化镓籽晶层的异质外延生长相关的缺陷被钉匝在掩模之下。通过侧壁生长和横向生长的组合，经一步再生长，就可在晶片的整个表面上制备出相对无缺陷氮化镓的完整接合层。
可用金属有机汽相外延(MOVPE)来横向生长悬挂外延的氮化镓半导体层。例如，可用三乙基镓(TEG)和氨(NH3)产物母体，在大约1000-1100℃和大约45Torr(大约6×104Pa)下横向生长横向氮化镓层。优选条件为TEG约13-39μmol/min和NH3约1500sccm与大约3000sccm H2稀释剂组合使用。最优选的条件是：在温度约为1100℃和45Torr(大约6×104Pa)下，TEG  约为26μmol/min，NH3约为1500sccm，而H2约为3000sccm。氮化镓基层最好被制作在其本身包含诸如其上的氮化铝之类的缓冲层的6H-SiC(0001)之类的衬底上。可以使用氮化镓之类的其它缓冲层。也可以使用多层衬底和缓冲层。
包含侧壁的氮化镓基层可以通过在氮化镓基层中形成沟槽来制备，使沟槽确定侧壁。或者，侧壁可以通过在氮化镓基层上形成被掩蔽的柱来制作，被掩蔽的柱含有侧壁并确定沟槽。一系列交替的沟槽和被掩蔽的柱最好被制作成形成多个侧壁。柱被制作成使顶部表面而非侧壁受到掩蔽。如上述，沟槽和/或柱可以通过掩蔽和选择腐蚀来形成。或者可以使用选择外延生长、腐蚀与生长的组合、或者其它技术。可以在柱成型之后在柱顶形成掩模。沟槽可延伸进入到缓冲层和/或衬底中，使槽底处于缓冲层内，最好在碳化硅衬底内。
氮化镓基层中的柱侧壁被横向生长进入沟槽，从而形成其缺陷密度较氮化镓基层缺陷密度低的横向氮化镓层。虽然自柱顶的垂直生长被其上的掩模减弱和抑制，沟槽中还是可能发生某些垂直生长。横向生长的氮化镓层在垂直方向生长穿过掩模中的窗口，同时传播较低的缺陷密度。随着该垂直生长高度延伸穿过掩模窗口，在掩模之上发生横向生长，同时传播较低的缺陷密度，从而在掩模之上形成生长横向氮化镓层。
根据本发明，氮化镓半导体结构包括碳化硅衬底和此碳化硅衬底上多个氮化镓柱。每一个柱包含一个侧壁、一个顶部，并确定其间的多个沟槽。柱顶部上提供一个帽层。横向氮化镓层自柱侧壁横向延伸进入沟槽。横向氮化镓层也可称为悬挂外延的氮化镓层。横向氮化镓层可以是在两个相邻侧壁之间延伸横跨其间沟槽的连续横向氮化镓层。
横向氮化镓层也可垂直地延伸通过窗口阵列。生长的横向氮化镓层也可以被制作成在帽层上横向延伸。该生长的横向氮化镓层可以是在两个相邻侧壁之间延伸跨越它们之间帽层的连续生长的横向氮化镓层。
在横向氮化镓层和/或生长的横向氮化镓层中，可提供多个微电子器件。缓冲层可包含在碳化硅衬底和多个柱之间。沟槽可延伸进入碳化硅衬底，进入到缓冲层或穿过缓冲层进入到碳化硅衬底中。氮化镓柱可能有缺陷密度，而横向氮化镓层和生长横向氮化镓层的缺陷密度较氮化镓柱的低。因此，可以生产低缺陷密度氮化镓半导体层，从而允许生产高性能微电子器件。
附图说明
图1-6是根据本发明各中间制造步骤中的氮化镓半导体结构的剖面图。
图7和图8是根据本发明的氮化镓半导体结构其它实施方案的剖面图。
具体实施方式
下文将参照附图更加充分地陈述本发明，其中示出了本发明的优选实施方案。然而，本发明可具体化为多种不同形式且不应局限于此处提出的各实施方案；相反，提供这些方案使这一公开全面而完整，并将发明的范围传达给本领域的技术人员。为了明晰，夸大了图中各个层和区域的厚度。通篇相似的编号指的是相似的元件。可以理解的是，当诸如层、区或衬底这样的元件被称为“在另一元件上”或“到另一单元上”时，可以是直接在其它元件上或也可以表示插入各种元件。而且，此处描述和说明的各个实施方案也包括其互补导电类型实施方案。
现参照图1-6来说明根据本发明的氮化镓半导体结构的几种制造方法。如图1所示，在衬底102上生长氮化镓基层104。衬底102可以包括6H-SiC(0001)衬底102a和氮化铝层或其它缓冲层102b。此处所采用的结晶学标记的约定是本领域技术人员众所周知的，无须赘述。氮化镓基层104的厚度可以是0.5-2.0微米，并可以在1000℃下生长于高温(1100℃)氮化铝缓冲层102b上，该缓冲层在冷壁立式感应加热的金属有机汽相外延系统中被淀积在6H-SiC衬底102a上，系统的工作条件为：26μmol/min的三乙基镓，1500sccm的氨，以及3000sccm的氢稀释气。该生长技术的细节可从T.W.Weeks等人的论文″GaN Thin FilmsDeposited Via Organometallic Vapor Phase Epiyaxy on(6H)-SiC(0001)Using High-Temperature Monocrystalline AlN Buffer Layers″，AppliedPhysics Letters，Vol.67，NO.3，July 17，1995，pp.401-403中找到，此处将其公开内容列为参考。其它碳化硅衬底，不论是否有缓冲层都可以采用。
继续解释图1，诸如氮化硅(SiN)之类的掩模109被包含在氮化镓基层104上。掩模109的厚度约为1000，可以用低压化学气相淀积(CVD)于410℃淀积在氮化镓基层104上。用常规光刻技术对掩模109进行图形化以便在其中提供窗口阵列。
如图1所示，通过窗口阵列腐蚀氮化镓基层以便在氮化镓基层104中确定多个柱106以及其间的多个沟槽107。每一个柱包含侧壁105和其上具有掩模109的顶部。也可以理解的是，虽然柱106和沟槽107优选用上述掩蔽和腐蚀来形成，但这些柱也可用从氮化镓基层的选择生长，然后在柱的顶部形成帽层的方法来制作。也可采用选择生长和选择腐蚀的组合。
仍参照图1，氮化镓基层104包含其中的多个侧壁105。本领域的技术人员可以理解，侧壁105可认为被空间上隔开的多个柱106确定，该多个柱也可称之为“台面”、“基座”、或者“支柱”。侧壁105也可以认为被氮化镓基层104中的多个沟槽107确定，该多个沟槽也可称为“阱”。侧壁105也可认为被一系列交替的沟槽107和柱106确定。如上述，规定侧壁105的柱106和沟槽107，可以用选择腐蚀和/或选择外延生长和/或其它常规的技术来制造。此外，还可以理解的是，侧壁不必垂直于衬底102，可以是倾斜的。
还可以理解的是，虽然图1示出了侧壁105的剖面图，但柱106和沟槽107可以确定细长的直的、V型的或者其它形状。如图1所示，沟槽107可延伸进入缓冲层102b和衬底102a，使后续的氮化镓生长优先发生在侧壁105而不是沟槽底面上。在其它实施方案中，沟槽可不延伸进入到衬底102a，也可不延伸进入到缓冲层102b，取决于例如沟槽的几何形状以及氮化镓横向对垂直生长的相对速率。
参见图2，氮化镓基层104的侧壁105被横向生长，以便在沟槽107中形成横向氮化镓层108a.氮化镓层的横向生长可以在1000-1100℃和45Torr(大约6×104Pa)条件下获得。13-39μmol/min的产物母体TEG和1500sccm的NH3可结合3000sccm的H2稀释气使用。若制作氮化镓合金，亦可用例如额外的常规的产物母体。此处所用，术语“横向”意味着平行于衬底102面的方向。还可以理解的是，在从侧壁105横向生长期间，横向氮化镓层108a的某些垂直生长也可能发生。如此所用，术语“垂直”表示平行于侧壁105的方向。但可以理解的是，柱106顶部上的生长和/或成核被掩模109减少甚至消除了。
现参照图3，横向氮化镓层108a的继续生长引起横向氮化镓层108a穿过窗口阵列的垂直生长。垂直生长的条件可以保持图2所述的条件。如图3所示，进入到沟槽107的连续垂直生长可以发生在沟槽的底部。
现参照图4，横向氮化镓层108a的继续生长引起掩模109上的生长，从而形成生长的横向氮化镓层108b。生长的条件可保持为图2所述的条件。
现参照图5，允许继续生长直到横向生长在沟槽107中界面108c处接合，从而在沟槽中形成连续的横向氮化镓半导体层108a。
仍然参照图5，也允许继续生长直到横向生长的前沿在掩模109上面于界面108d处接合，从而形成连续生长的横向氮化镓半导体层108b。总的生长时间可以约为60分钟。可用单步连续生长。如图6所示，然后可以在横向氮化镓半导体层108a中制作微电子器件110。也可在生长的横向氮化镓半导体层108b中制作微电子器件。
于是，在图6示出了根据本发明的氮化镓半导体结构100。氮化镓结构100包含衬底102。衬底优选包括6H-SiC(0001)衬底102a和碳化硅衬底102a上的氮化铝缓冲层102b。氮化铝缓冲层102b的厚度可以是0.1μm。
衬底102的制备对本领域的技术人员是众所周知的，无须进一步说明。举例来说，在授予Palmour的美国专利4,865,685、授予Davis等人的Re 34,861、授予Kong等人的4,912.064以及授予Palmour等人的4,946,547中，描述了碳化硅衬底的制造，此处将其公开列为参考。
与衬底102a相对的缓冲层102b上，还包含氮化镓基层104。氮化镓基层104的厚度可以约为0.5-2.0μm，并可用金属有机汽相外延(MOVPE)来形成。氮化镓基层通常具有不希望的较高的缺陷密度。例如，在氮化镓基层中可存在约为108-1010cm-2的位错密度。这些高密度缺陷可能来自缓冲层102b与氮化镓基层104之间的晶格失配，和/或其它原因。这些高密度缺陷会影响制作在氮化镓基层104中的微电子器件的性能。
继续描述图6，氮化镓基层104包含由多个柱106和/或多个沟槽107所确定的多个侧壁105。如上所述，侧壁可以是倾斜的并具有各种细长形状。又如上所述，氮化镓柱106被例如优选包括氮化硅的掩模109那样的帽层盖住。
继续描述图6，横向氮化镓层108a从氮化镓基层104的多个侧壁105横向地和垂直地延伸。生长的横向氮化镓层108b从横向氮化镓层108a延伸。横向氮化镓层108a和生长的横向氮化镓层108b，可以用金属有机汽相外延方法在大约1000-1100℃和大约45Torr(大约6×104Pa)条件下形成。大约13-39μmol/min的三乙基镓(TEG)产物母体和大约1500sccm的氨(NH3)，可结合3000sccm的H2稀释气使用，以形成横向氮化镓层108a和生长的横向氮化镓层108b。
如图6所示，横向氮化镓层108a在界面108c处接合，从而在沟槽中形成连续的横向氮化镓半导体层108a。已经发现，氮化镓基层104中的位错密度通常不从侧壁105以与从氮化镓基层104垂直方向传播相同的位错密度横向传播。因此，横向氮化镓层108a能够具有较低的位错缺陷密度。例如低于约104cm-2。从实际观点出发，可以看作无缺陷。因此，横向氮化镓层108a可以构成器件质量级的氮化镓半导体材料。于是，如图6所示，可以在横向氮化镓半导体层108a中制作微电子器件110。
仍参照图6，生长的横向氮化镓层108b在界面108d处接合，从而在掩模上形成连续的生长横向氮化镓半导体层108b。已经发现，氮化镓基层104中以及横向氮化镓层108a的位错密度通常不以与从氮化镓基层104和横向氮化镓层108a垂直传播相同的位错密度横向传播。因此，生长的横向氮化镓层108b也能具有较低的缺陷密度，例如低于约104cm-2。从而，生长横向氮化镓层108b也能形成器件质量级氮化镓半导体材料。因而如图6所示，在生长的横向氮化镓半导体层108b中，可以制作微电子器件110。
现参照图7和8，来描述氮化镓半导体结构的其它实施方案和根据本发明的制备方法。如结合图1-6已经描述的那样，利用不同间隔或尺度的柱和沟槽制备了氮化镓结构。在图7中，用小柱宽/沟宽比来生产分立的氮化镓结构。在图8中，用大柱宽/沟宽比来生产其它分立氮化镓结构。
现参照图7，如结合图1-4已述及那样，用小柱宽/沟宽比制备了图7的氮化镓半导体结构。再参照图7，允许继续生长，直到生长的横向前沿在掩模109上界面108d处接合，从而在掩模109上形成连续生长的横向氮化镓半导体层。总生长时间可约为60分钟。如图7所示，在生长横向氮化镓层108b中可制作微电子器件110。
现参照图8，如结合图1-4已述及那样，用大柱宽/沟宽比制备了图8的氮化镓半导体结构。再参照图8，允许继续生长直到生长的横向前沿在沟槽107中界面108c处接合，从而在沟槽107中形成连续的氮化镓半导体层108a。总生长时间可约为60分钟。如图8所示，在悬挂外延的氮化镓层108a中可制作微电子器件110。
现对本发明的方法和结构进行其它讨论。沟槽107优选为矩形沟槽，优先沿氮化镓基层104上的<11  20>和/或<1  100>方向延伸。对于沿<11  20>方向的沟槽，可得到具有(1  101)倾斜小平面以及窄的(0001)顶部小平面的截顶三角形条形。沿<1  100>方向可生长具有(0001)顶部小平面、(11  20)垂直侧面、以及(1  101)倾斜小平面的矩形条形。对于达3分钟的生长时间，无论取向如何，都可得到类似的形貌。如果继续生长，则条形就变成不同形状。
横向生长量对沟槽取向的依赖关系往往十分密切。<1  100>取向的横向生长速率一般较沿<11  20>的快得多。因此，最好是将沟槽定向为沿着氮化镓基层104的<1  100>方向延伸。
依赖于取向的不同形貌的发展，显示出与氮化镓结构中结晶学平面的稳定性有关。沿<11  20>取向的沟槽可以具有宽的(1  100)斜面以及取决于生长条件或者有非常窄的(0001)顶面或者没有。这也许是因为(1  101)在氮化镓纤锌矿晶体结构中是最稳定的晶面，而该面的生长速率又慢于其它晶面。<1  100>取向沟槽的{1  101}面可能有起伏，这意味着有不止一个密勒指数存在。看来在淀积期间发生了被选取的{1  101}面的竞争生长，使这些面成为不稳定，同时引起这些面的生长率相对于沿<1  120>取向沟槽的(1  101)的生长速率提高。
从沿<1  100>取向的沟槽选择生长的氮化镓层的形貌，通常也与生长温度紧密相关。1000℃生长的层可以具有截头三角形形状。随着生长温度增加，该形貌可能逐渐变成矩形截面。这种形状变化可能是扩散系数增加所至，所以随生长温度增加，镓粒子流沿(0001)顶面到达{1  101}面。这可能引起(0001)面的生长速率降低，而{1  101}面生长速率增加。这种现象在二氧化硅上选择生长砷化镓时也已经观察到。因此，1100℃看来是最佳的温度。
氮化镓区形貌的发展，也显示出依赖TEG的流量。TEG供给量的增加，一般都在横向和垂直两个方向增加生长速率。然而，在TEG流速从大约13μmol/min变为大约39μmol/min时，横向/垂直生长速率的比值从1.7减少到0.86。这种沿<0001>相对于沿<11  20>的生长速率受TEG流速增加的影响，可能与所用反应室的类型有关，其中，垂向反应气体流与衬底垂直。镓浓度在表面相当程度的增加，足以阻止向{1  101}面的扩散，于是化学吸附和氮化镓生长更易于在(0001)面发生。
用间隔为3μm并沿<1  100>取向的7μm宽的沟槽，在大约1100℃和约26μmol/min的TEG流量下，可以得到2μm厚的连续氮化镓半导体层。也可以用间隔为2μm并沿<1  100>取向的3μm宽的沟槽，在1100℃和约26μmol/min的TEG流量下，得到2μm厚的连续氮化镓半导体层。连续氮化镓半导体层可以包含两个生长前沿接合时形成的亚表面空洞。这些空洞往往可在使用矩形槽和/或具有垂直的{11  20}侧面的掩模窗口的横向生长条件下发生。
连续氮化镓半导体层可具有微观平整及无小坑的表面。横向生长氮化镓层的表面可包含梯田状的结构，其平均台阶高度为0.32nm。这种梯田结构也许与横向生长的氮化镓有关，因为它一般不包含在仅在氮化铝缓冲层上生长的面积大得多的薄膜中。平均RMS粗糙度值与氮化镓基层104得到的值相似。
源于氮化镓基层104与缓冲层102b之间的界面的扩展位错，显示出要传播到氮化镓基层104的顶部表面。这些区域的位错密度约为109cm-2。与此相反，扩展位错看来不易于横向传播。相反，横向氮化镓层108a和生长的横向氮化镓层108b中位错很少。在横向氮化镓层108a中，该很少的位错可平行于(0001)面，经由垂直扩展位错在再生长区中90度弯曲后的延伸而形成。看来这些位错不传播到生长的氮化镓层的顶部表面。
如前述，选择生长的氮化镓层的形成机理是横向外延。该机理的两个主要阶段是横向(或悬挂外延)生长和横向生长。在悬挂外延生长期间，氮化镓同时地朝垂直与横向方向生长。有选择地淀积在侧壁上的氮化镓远快于在掩模109上的生长，显然是由于镓原子在氮化镓侧壁表面上的粘附系数s(s＝1)比在掩模上(s＜＜1)和衬底上(s＜1)高得多所至。Ga或N原子应不易键合到掩模和衬底的表面，并在一段时间内达到足以引起GaN成核的数量。它们将沿着掩模和衬底的表面或者蒸发或者扩散至掩模或衬底的末端，并到达侧壁上。在横向生长期间，氮化镓也同时垂直与横向生长。只要悬挂外延长过掩模，Ga或N原子仍不易键合到掩模表面，不足以在一定时间内引起使氮化镓成核的数量。它们仍将沿掩模或者蒸发或者扩散至其末端，并到达悬挂外延的氮化镓垂直表面。
镓和氮在氮化镓上的表面扩散，可以在选择生长氮化镓中发挥作用。材料的主要源似应来自气相。这可由以下事实得到证明：TEG流量的增加引起(0001)顶面生长速率发展得快于(1  101)侧面，因此控制横向生长。
总之，悬挂外延和横向外延生长可以通过MOVPE在被掩蔽的氮化镓基层的侧壁上获得。生长可与侧壁的取向、生长温度、以及TEG流量紧密相关。可在下述条件下穿过2μm宽的柱之间的沿<1  100>方向延伸的3μm宽的沟槽得到悬挂外延生长和横向生长区的接合，从而形成位错密度极低、表面平滑无小坑的区域：温度约为1100℃，TEG流量约为26μmol/min。用MOVPE自侧壁悬挂外延和横向生长的氮化镓，可用以在薄膜整个表面之上获得微电子器件用的低缺陷密度区。
在各图和说明书中，本发明的典型优选实施方案业已公布，虽然使用了特别术语，但仅仅用于一般描述的意义上，而不是为了限制，本发明的范围在下列的权利要求中被提出。

Claims (28)

1.一种制造氮化镓半导体层的方法，它包含以下步骤：
提供碳化硅衬底、碳化硅衬底上的氮化镓层、以及对着碳化硅衬底的氮化镓层上的帽层，氮化镓层包括多个柱和其间的多个沟槽，沟槽确定帽层中的多个窗口；以及
使柱的侧壁横向生长进入沟槽，从而形成氮化镓半导体层；
其特征在于：多个沟槽包括碳化硅衬底中的沟槽底部。
2.根据权利要求1的方法，其中的横向生长步骤包括：使柱的侧壁横向生长进入沟槽，直到横向生长的侧壁在沟槽中接合，从而形成氮化镓半导体层。
3.根据权利要求1的方法，其中的横向生长步骤包括：使沟槽中横向生长的柱的侧壁横向生长到柱顶上的帽层上，从而形成氮化镓半导体层。
4.根据权利要求3的方法，其中的横向生长步骤包括：使沟槽中横向生长的柱的侧壁横向生长到柱顶上的帽层上，直至横向生长的侧壁在帽层上接合，从而形成氮化镓半导体层。
5.根据权利要求1的方法，其中还包括在所述横向生长步骤之后的在氮化镓半导体层中制作微电子器件的步骤。
6.根据权利要求1的方法，其中的横向生长步骤包括：利用金属有机汽相外延，使柱的侧壁横向生长进入沟槽。
7.根据权利要求1的方法，其中的氮化镓基层包括一个缺陷密度，且其中的横向生长步骤包括：使柱的侧壁横向生长进入沟槽，从而形成缺陷密度比氮化镓基层的缺陷密度低的氮化镓半导体层。
8.根据权利要求1的方法，其中横向生长步骤包括以下步骤：
使柱的侧壁横向和垂直生长进入沟槽，并穿过帽层中的窗口，从而在沟槽中形成垂直延伸穿过帽层中窗口的横向氮化镓层；以及
使穿过帽层中的窗口延伸的横向氮化镓层横向生长到帽层上，从而形成生长的横向氮化镓层。
9.根据权利要求8的方法，其中横向和垂直生长侧壁以及横向生长横向氮化镓层的步骤被执行，而不在帽层上垂直生长氮化镓。
10.根据权利要求8的方法，其中横向生长横向氮化镓层的步骤包括以下步骤：使穿过帽层中的窗口延伸的横向氮化镓层横向生长到帽层上，直至生长的横向氮化镓层在帽层上接合，从而形成连续的生长横向氮化镓层。
11.根据权利要求8的方法，其中横向生长横向氮化镓层的步骤随之以在生长的横向氮化镓层中制作微电子器件的步骤。
12.根据权利要求8的方法，其中提供的步骤包括以下步骤：
用其中包括窗口阵列的掩模，掩蔽碳化硅衬底上的氮化镓基层；以及
穿过窗口阵列，腐蚀氮化镓基层，以便确定氮化镓层中的多个柱及其间的多个沟槽。每一个柱包括侧壁和其上带有掩模的顶部，以提供帽层。
13.根据权利要求12的方法，其中的掩蔽步骤包括：用其中包括窗口阵列的掩模，掩蔽碳化硅衬底上的缓冲层上的氮化镓基层。
14.根据权利要求12的方法，其中的腐蚀步骤包括：穿过窗口阵列，腐蚀氮化镓基层和碳化硅衬底，以便确定氮化镓基层中的多个柱及其间的多个沟槽，每一个柱包括侧壁和其上带有掩模的顶部，沟槽包括碳化硅衬底中的沟槽底部。
15.根据权利要求13的方法，其中的腐蚀步骤包括：穿过窗口阵列，腐蚀氮化镓基层、缓冲层、和碳化硅衬底，以便确定氮化镓基层中的多个柱及其间的多个沟槽。每一个柱包括侧壁和其上带有掩模的顶部，沟槽包括碳化硅衬底中的沟槽底部。
16.根据权利要求8的方法，其中的氮化镓基层包括缺陷密度，且其中的横向和垂直生长步骤包括：使柱的侧壁横向和垂直生长进入沟槽并穿过帽层中的窗口，从而形成缺陷密度低于氮化镓基层的缺陷密度的横向氮化镓半导体层。
17.一种氮化镓半导体结构，它包括：
碳化硅衬底；
碳化硅衬底上的多个氮化镓柱，每柱包括侧壁和顶部，并确定其间的多个沟槽；
柱顶部上的帽层；以及
从柱的侧壁横向延伸进入沟槽的横向氮化镓层，
其特征在于：多个延伸进入碳化硅衬底的沟槽。
18.根据权利要求17的结构，其中的横向氮化镓层是在相邻侧壁之间延伸跨越其间的沟槽的连续横向氮化镓层。
19.根据权利要求17的结构，其中的横向氮化镓层也在沟槽中垂直延伸到超过帽层。
20.根据权利要求19的结构，还包括：
从横向氮化镓层横向延伸到帽层上的生长的横向氮化镓层。
21.根据权利要求20的结构，其中生长的横向氮化镓层是在相邻侧壁之间延伸跨越其间帽层的连续生长横向氮化镓层。
22.根据权利要求17的结构，还包括横向氮化镓层中的多个微电子器件。
23.根据权利要求19的结构，还包括在沟槽中垂直延伸超过帽层的横向氮化镓层中的多个微电子器件。
24.根据权利要求20的结构，还包括生长横向氮化镓层中的多个微电子器件。
25.根据权利要求17的结构，还包括碳化硅衬底与多个柱之间的缓冲层。
26.根据权利要求25的结构，其中的沟槽穿过缓冲层延伸并进入碳化硅衬底。
27.根据权利要求17的结构，其中的柱是具有缺陷密度的，且其中的横向氮化镓层的缺陷密度低于此缺陷密度。
28.根据权利要求20的结构，其中的柱是具有缺陷密度的，且其中生长的横向氮化镓层的缺陷密度低于此缺陷密度。
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CA2347425A1 (en) 2000-06-08
ATE420458T1 (de) 2009-01-15
US20020179911A1 (en) 2002-12-05
EP1138063B1 (en) 2009-01-07
US6462355B1 (en) 2002-10-08
ES2169015T1 (es) 2002-07-01
EP1138063A1 (en) 2001-10-04

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