CN1168794C - 用于氧化物cmp的组合物 - Google Patents
用于氧化物cmp的组合物 Download PDFInfo
- Publication number
- CN1168794C CN1168794C CNB971819726A CN97181972A CN1168794C CN 1168794 C CN1168794 C CN 1168794C CN B971819726 A CNB971819726 A CN B971819726A CN 97181972 A CN97181972 A CN 97181972A CN 1168794 C CN1168794 C CN 1168794C
- Authority
- CN
- China
- Prior art keywords
- mechanical polishing
- chemical
- weight
- oxide
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
Abstract
Description
浆料No. | pH | %固含物 | PETEOS R(埃/分) | 氮化物RR(埃/分) | 选择性 |
1 | 8 | 4.0 | 925 | 1050 | 0.89 |
2 | 8 | 5.0 | 4337 | 1137 | 3.81 |
3 | 8 | 7.5 | 4800 | 1130 | 4.25 |
4 | 8 | 10.0 | 5145 | 1153 | 4.46 |
5 | 10 | 4.0 | 4342 | 1101 | 3.95 |
6 | 10 | 10.0 | 4344 | 1015 | 4.28 |
浆料No. | pH | %固含物 | 添加剂 | PETEOS RR(埃/分) | 氮化物RR(埃/分) | 选择性 |
7 | 4.2 | 20 | 406 | 14.5 | 28 | |
8 | 5.8 | 20 | 281 | 208 | 1.35 | |
9 | 6.1 | 20 | 241 | 281 | 0.86 | |
10 | 6.2 | 20 | 163 | 354 | 0.46 |
浆料No. | pH | %总固含物 | 浆料中的粉化氧化铈% | PETEOS RR(埃/分) | 氮化物RR(埃/分) | 选择性 |
11 | 4 | 8 | 20 | 1595 | 108.4 | 14.71 |
12 | 4 | 8 | 40 | 2168 | 183.4 | 11.82 |
13 | 4 | 8 | 60 | 3356 | 826.5 | 4.06 |
14 | 4 | 8 | 80 | 4785 | 209.1 | 22.88 |
浆料 | 二氧化硅重量% | 硝酸铵铈重量% | 乙酸重量% | 氮化物RR(埃/分) | PETEOS RR(埃/分) | 选择性 |
20 | 4 | 0.1 | 0.1 | 58 | 280 | 4.83 |
21 | 4 | 0.1 | 1 | 52 | 253 | 4.87 |
22 | 4 | 0.65 | 0.5 | 59 | 619 | 10.49 |
23 | 4 | 1 | 0.1 | 44 | 1535 | 34.89 |
24 | 4 | 1 | 1 | 312 | 1524 | 4.88 |
25 | 4 | 1 | 0 | 104.62 | 1337.9 | 12.79 |
26 | 4 | 2 | 0.05 | 57.51 | 1103 | 19.18 |
27 | 4 | 3 | 0.1 | 89.99 | 835.8 | 9.29 |
28 | 4 | 1 | 0.5 | 71.5 | 803.1 | 11.23 |
29 | 4 | 2 | 0.1 | 24.1 | 346.6 | 14.38 |
30 | 4 | 2 | 0.5 | 71.1 | 768.0 | 10.8 |
浆料 | 二氧化硅重量% | pH | 乙酸重量% | 氮化物RR(埃/分) | PETEOS RR(埃/分) | 选择性 |
31 | 4 | 4.0 | 0.6 | 114 | 1713.7 | 15.03 |
32 | 4 | 4.3 | 0.6 | 141 | 1988.9 | 14.11 |
33 | 4 | 4.7 | 0.6 | 199 | 2810.5 | 14.12 |
34 | 4 | 5.0 | 0.6 | 219 | 2355 | 10.75 |
螯合剂 | 螯合剂(重量%) | 氧化物除去速率 | 氮化物除去速率 | CMP后清洁(LPD) |
EDTA-k | 0 | 3870 | 19 | >20,000 |
EDTA-k | 0.1 | 2731 | 11 | 977 |
EDTA-k | 0.2 | 1806 | 12 | 169 |
EDTA-k | 0.3 | 1381 | 11 | 45 |
柠檬酸 | 0 | 4241 | 20 | 3772 |
柠檬酸 | 0.10% | 2095 | 34 | 516 |
柠檬酸 | 0.20% | 1625 | 68 | 28 |
无氧化剂 | 有氧化剂 | |||||
批次 | 氧化物速率(埃/分) | 氮化物速率(埃/分) | 选择性 | 氧化物速率(埃/分) | 氮化物速率(埃/分) | 选择性 |
1 | 2822 | 472 | 5.98 | 3255 | 28.9 | 112.6 |
2 | 3394 | 373 | 9.10 | 3513 | 22.8 | 154.1 |
3 | 3640 | 319 | 11.42 | 3428 | 25.8 | 132.9 |
4 | 2929 | 473 | 6.19 | 3711 | 36.1 | 102.8 |
5 | 1734 | 856 | 2.02 | 3880 | 46.5 | 83.4 |
Claims (74)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/774,488 | 1996-12-30 | ||
US08/774,488 US5759917A (en) | 1996-12-30 | 1996-12-30 | Composition for oxide CMP |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1248994A CN1248994A (zh) | 2000-03-29 |
CN1168794C true CN1168794C (zh) | 2004-09-29 |
Family
ID=25101406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB971819726A Expired - Lifetime CN1168794C (zh) | 1996-12-30 | 1997-12-19 | 用于氧化物cmp的组合物 |
Country Status (11)
Country | Link |
---|---|
US (3) | US5759917A (zh) |
EP (1) | EP0963419B1 (zh) |
JP (2) | JP2001507739A (zh) |
KR (1) | KR20000069823A (zh) |
CN (1) | CN1168794C (zh) |
AT (1) | ATE264378T1 (zh) |
AU (1) | AU5532898A (zh) |
DE (1) | DE69728691T2 (zh) |
IL (1) | IL130720A0 (zh) |
TW (1) | TW505690B (zh) |
WO (1) | WO1998029515A1 (zh) |
Families Citing this family (207)
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WO1998029515A1 (en) | 1998-07-09 |
CN1248994A (zh) | 2000-03-29 |
US20040089634A1 (en) | 2004-05-13 |
JP2008199043A (ja) | 2008-08-28 |
JP2001507739A (ja) | 2001-06-12 |
DE69728691T2 (de) | 2004-08-19 |
EP0963419A1 (en) | 1999-12-15 |
ATE264378T1 (de) | 2004-04-15 |
AU5532898A (en) | 1998-07-31 |
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EP0963419B1 (en) | 2004-04-14 |
US5759917A (en) | 1998-06-02 |
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IL130720A0 (en) | 2000-06-01 |
US6984588B2 (en) | 2006-01-10 |
DE69728691D1 (de) | 2004-05-19 |
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