CN1192788A - 利用等离子体处理大面积衬底基片的系统 - Google Patents

利用等离子体处理大面积衬底基片的系统 Download PDF

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CN1192788A
CN1192788A CN96196235A CN96196235A CN1192788A CN 1192788 A CN1192788 A CN 1192788A CN 96196235 A CN96196235 A CN 96196235A CN 96196235 A CN96196235 A CN 96196235A CN 1192788 A CN1192788 A CN 1192788A
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陈聪
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    • H—ELECTRICITY
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
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    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

一个用于处理大面积衬底基片的等离子体系统(10)。在一个实施例中,该系统包括多个射频等离子体源(40),它们被可拆卸地连接在处理腔(14)的射频可透过的窗(26)上。源的数量和分布是可以变化的,以提供处理衬底基片所需要的尺寸大小和均匀性的等离子体场。许多等离子体探针(74),例如朗谬尔探针、法拉弟凹坑和光学传感器被放置在腔内,并与等离子体源以电连接的方式,调节各个源所产生的射频场,以保持所需要的场的均匀性程度。

Description

利用等离子体处理大面积衬底基片的系统
本发明涉及利用等离子体处理衬底基片的装置，尤其涉及用于等离子体处理大面积衬底基片的射频(rf)装置。
本发明的背景
利用等离子体处理大面积衬底基片，例如处理在平板显示器或300毫米硅片生产中相应使用的玻璃衬底基片或半导体衬底基片，会发生一系列在处理小面积衬底基片时不会发生的问题。其中一个就是其面积大到足以处理大面积衬底基片的等离子体如何产生的问题。另一个是遍布在如此大面积上的等离子体的密度和化学均匀性如何保持的问题。
电感耦合等离子体源(ICP)和变压器耦合等离子体源(TCP)的应用，既受到由于使用电感线圈天线结构而难以保持等离子体均匀性的影响，也受到生产和保持这类系统所需费用的影响，因为这需要大而厚的英窗以把天线辐射线耦合入处理腔中。使用这样厚的石英窗，由于在窗口中的热逸散而导致射频(rf)功率的增大(而效率则降低)。
电子回旋共振(ECR)和螺旋波(Helicon)型等离子体源的应用，由于在使用单个天线或波导管的情况下，对大面积的谐振磁场难以度量而受到限制。而且，大多数电子回旋共振源要利用较贵的微波能量，且难以电调谐。热阴极等离子体源的使用，由于阴极材料的升华逸散而导致等离子体环境污染，而使用冷阴极，则由于冷阴极暴露在所产生的等离子体中而导致污染。
本发明藉助于先前的大面积等离子体处理系统而避免了这些问题。
本发明简述
本发明涉及一种可用于产生任意尺寸的均匀等离子体的易于度量和可保持的系统。在一个实施例中，多个射频等离子体源可拆卸地连接到绝缘窗上，例如真空处理腔的玻璃或石英窗上，而在另一个实施例中，多个源中的每一个源都有其自身的窗并被连接到腔上。在腔中的等离子体测量探针提供了等离子体均匀性的信息，而这些信息又被利用于控制施加到每个射频等离子体源上的射频能量，以便保持所预期的等离子均匀性。在一个实施例中，这种等离子体测量探针是朗谬尔探针。在另一个实施例中，这种探针是法拉第凹坑。在还有一个实施例中，这种探针是光学探针。
在另一个实施例中，一个包括一个石英窗的等离子体源，带有一个用于传输气体的整根管子。几个使用不同气体的这种等离子体源，可被组合成一条线列，以用于在一个联机处理系统中顺序地处理衬底基片。
附图简介
所附的权利要求指出了本发明的特征。通过参考下列描述连同附图，可以更好地理解本发明的上述及更多的优点。
图1是本发明等离子体处理系统一个实施例的框图；
图2是使用小面积等离子体源以提供大面积等离子体有效区域的源配置的顶视图；
图3是一个带有内装的法拉第凹坑的基片托座的实施例平面视图；
图3a是一个带有预埋的法拉第凹坑的硅测试片实施例的平面视图；
图4是成形为一个体积源的一个本发明实施例的立体视图；
图5是带有整体气体输送管的一个本发明等离子体源实施例的立体视图；
图6是使用图5中的多个等离子体源的一个连续等离子体处理装置实施的横截面视图；
图7是利用两个等离子体源的系统的示意图；
图8描绘了用于在两个源系统中产生电子回旋共振等离子体的磁体表面布局的一个实施例；
图8a描绘了用于产生电子回旋共振的磁体表面布局的另一个实施例。
较佳实施例阐述
参看图1，图中所示为本发明系统的一个实施例10，它包括一个真空腔14，真空腔14具有一个与真空泵(图中未示)连接的真空通道18。在所示的该实施例中，系统10包括被0形环30真空密封的一系列绝缘窗26，这些绝缘窗26藉助可拆卸的夹紧装置而被附接到真空腔14的上表面22上。在一个具有位于接地外屏蔽罩44内的螺旋形或扁平型天线46的实施例中，射频等离子体源40被可拆卸地连接到一些绝缘窗26上。在另一些实施例中，可使用电容或电感以耦合天线。各个天线的冷却是藉助于使冷却液流经天线而实现的。一般只在较高功率下才需要冷却。不与等离子体源40连接的窗26可用作对腔14的观察孔。各个等离子源40的可拆卸性使相关连的绝缘窗26易被清洁，或可使系统10内的真空不被破坏而更换等离子体源40。虽然在该实施例中使用了玻璃窗，但其它绝缘材料例如石英或聚乙烯等也可被用作窗口材料。
各个天线46，通过匹配网络50和耦合电容器54，而与射频发生器66连接。各个天线46还包括一个调谐电容58，它与相应的天线46并联。从控制器62中发出的信号D、D’和D”控制着各个调谐电容器58。通过逐一地调节调谐电容器58，从各个射频天线46输出的功率得以调节到使产生的等离子体保持均匀。其它调谐装置(如零反射功率调谐装置)也可被用于调节天线的功率。在一个实施例中，射频发生器66由从控制器62发出的信号E所控制。在一个实施例中，控制器62通过对匹配网络50发出信号F而控制天线46的功率。
响应对传递给天线46的功率进行测量的传感器70(如美国马萨诸塞州贝弗利的康代尔公司[Comdel，Inc.Beverly，MA]生产的有效功率监测器)所提供的信号A、对等离子体密度作直接测量的快扫描朗谬尔探针74所提供的信号B、和响应附装到衬底片托座82的多个法拉弟凹坑78所提供的信号C，控制器62从而调节调谐电容器58和射频发生器66。通过移动朗谬尔探针74(双向箭头I)使之进入或退出等离子体进行扫描。藉助这些传感器，控制器62可先对射频发生器66和调谐电容器58进行定位，然后再实际使用该系统10对衬底片作等离子体处理。一旦完成定位，探针即被去除而把要被处置的衬底基片放入。在本系统的另一实施例中，在等离子体处理期间，探针被保留在原位，以对系统进行实时控制。在这样使用朗谬尔探针的实施例中，必须当心不让探针逸散出的颗粒沾污等离子体，也不要遮蔽住正在处理的衬底基片。在本系统的还有一个实施例中，系统的性能是由制造确定的，该系统不包括等离子体探针。
参见图2，等离子体源40的配置可以是这样的，即多个实际上较小的等离子体源40所产生的均匀等离子体所遍及的面积大于单个源遍及的面积的总和。在图示配置的实施例中，4个配置在边长6英寸的正方形顶角的直径为4英寸的等离子体源40所产生的等离子体，大体上等于一个直径12英寸的单个源所产生的等离子体。因此，通过提供一个带有许多窗26的真空腔14，可以形成等离子体源40的各种各样配置，从而产生出具有预期形状和均匀性的等离子体。以上描绘过的那些天线，当如图所示那样被恰当屏蔽后，不会导致各个源之间的射频互相干拢。
在多级-偶极子表面磁场参与下，多级射频等离子体源能激发出电子回旋共振。这样的表面磁场会是，例如，在极面处约为1千高斯(KG)，而在极表面周围10厘米(cm)处则下降到只有几个高斯(Gauss)。在这样的系统中，可以形成电子回旋共振，其电子回旋共振频率(单位为赫兹Hz)可由公式υ＝2.8×106(B)求出，此处，B是磁场强度，其单位为高斯(Gauss)。因此，假定电子回旋共振基频为13.56兆赫兹(MHz)(也就是由射频发生器提供的频率)，所需用于产生共振耦合的磁场强度(由磁体施加)为4.8高斯(G)。通过成比例地增加磁场，可以获得更高的共振基频谐函数。因此，对于要被耦合的次谐波，磁场必须增加到9.6高斯(G)。这样的电子回旋共振在较低的压力下(压力＜1毫乇，m Torr)最显著。使用小的射频发生器使得这样的磁体可被放在适当的位置，从而使电子回旋共振成为可能。
法拉弟凹坑78被用于测量等离子体剂量和磁场的均匀性，在一个实施例中，法拉弟凹坑78被设置在接近衬底片托座82表面的一边(图3)。衬底片90的直边86以这样的方式被放置在片托座82上，即要使片托座82的法拉弟凹坑暴露在等离子体中。以此种途径，衬底片90所遭受到的等离子体剂量就能被直接测量出来。另一种方法是，如图3a所示，一个专用片90’被制备成带有许多法拉弟凹坑78，这些凹坑78被嵌入专用片90’中。专用片90’被用来促使射频发生器66和调谐电容器58达到预期的等离子体密度和均匀性。一旦运转参数已被确定，该专用片90’就被移去，而要被处理的衬底片90则被放置在片托座82上。
参考图4，虽然在图中系统10已被描述为，位于真空腔14上表面的等离子体源40依平面排列，但等离子体源40也可分布在真空腔14’的其它表面上以产生出均匀容积的等离子体。这种系统在分批作业时尤为有效。
参考图5，在另一个实施例中，石英窗100不与真空腔14连接，而是封住等离子体源40’的屏蔽罩44的一端。在这个实施例中，与石英窗100内的开孔108连接的管104提供了一个气体进给途径以形成特殊气体等离子体。在此情况下，等离子体源40’不与在真空腔14的壁中的窗26连接，而是与真空腔14本身连接。这种等离子体源40’能产生出被许多处理加工所需要的特殊气体等离子体。几个这样的等离子体源40’可被排列成行地设置以便以不同的等离子体依次处理衬底片90，这正如在图6中所示的排列成行的实施例那样。在该实施例中，藉助传送装置112使片90移动通过连续处理线114中的连续处理带，在此实施例中即为通过处理带I和II。每个处理带通过挡板116与相邻的处理带隔开。在一个实施例中，处理带I中的气体是用于硅-化学气相沉积(Si-CVD)的硅烷(SiH4)，而在处理带II的气体是用于掺杂的磷烷(PH3)。在另一个实施例中，一组带有负载-制动器的工具把每个处理腔与另外的处理腔隔离，并装备有自动装置，该自动装置包括了用于等离子体化学沉积(CVD)和等离子体蚀刻的本发明射频等离子体源40。
图7显示了使用两个等离子体源的本发明系统的一个实施例。在此实施例中，每个源是一个直径3-4英寸的扁平电感天线46。每个天线46是由1/4英寸的铜管绕制5-6圈而构成的。每个天线46都通过相应的160微微法(pf)电容器连接到匹配网络50上。匹配网络50包括一个0.03微亨(μH)的电感器125和两个可变电容器130和135。可变电容器130可在10-250微微法(pf)范围内调节，第二个电容器135在5-120微微法(pf)范围内可调节。通过调节可变电容器130和135，使匹配网络50调谐。该匹配网络50本身又与以13.56兆赫(MHz)运行的射频源66连接。一系列磁体140和145围绕着真空腔的圆周按每隔7厘米交替极性放置，从而形成磁性段。
随着真空腔在1毫乇(m Torr)压力下运行。加给天线46的功率是每个天线25瓦(W)，总共约50瓦(W)。随着腔中的压力降至0.1毫乇(m Torr)，每个天线的功率增至200瓦(W)或者总计400瓦(W)。由此而产生的总功率50瓦(W)的等离子体具有大体为1011/厘米3的均匀密度。使用四个这样的源可以进一步改进均匀性和密度。
参考图8，用于产生电子回旋共振(ECR)的磁体安排的这一实施例利用了许多与天线46邻近的磁体150。在该实施例中，许多磁体150被反置在天线之间。图8a描绘了另一个实施例，其中每个源都有其自己的磁体组。其他的磁体构形也是可以的。
通过已描述的较佳实施例，本领域的技术人员将认识到还可以对本发明作各种各样的改变而仍在本发明权利要求的领域和精神之内。因此，本发明仅限于权利要求指明的领域之内。
权利要求书
按照条约第19条的修改
1、一种利用等离子体处理衬底基片的系统，所说的系统包括：
一个在其中产生等离子体的真空腔，在所说的腔的表面上有许多大体平面的射频可透过的窗；
一个射频发生器；
至少两个射频源，每一个都在所说的真空腔的外部，每个所说射频源与射频发生器电连接，并被并置于所说的许多射频可透过的窗中相应的一个窗上，并可在该真空腔中产生所说的等离子体；
所说的射频源可在贴近所说的衬底基片处产生局部的、大体均匀的等离子体。
2、按照权利要求1所述的一种系统，其特征在于，它还包括至少一个调谐电路，所说的至少一个调谐电路的每一个与所说的至少两个射频发生源中的一个源电连接。
3、按照权利要求2所述的一种系统，其特征在于，它还包括：
至少一个传感器用于测量所说的等离子体的至少一个特性；以及
一个控制器，它从所说的至少一个传感器接受所说的等离子体的至少一个特性信号，并随之而控制所说的多个调谐电路。
4、按照权利要求1所述的一种系统，其特征在于，所说的多个射频可透过的窗中的每个窗都是由石英构成的。
5、按照权利要求1所述的一种系统，其特征在于，所说的多个射频可透过的窗中的每个窗都是由玻璃构成的。
6、按照权利要求3所述的一种系统，其特征在于，所说的至少一个传感器是朗谬尔探针。
7、按照权利要求3所述的一种系统，其特征在于，所说的至少一个传感器是一组法拉弟凹坑。
8、按照权利要求7所述的一种系统，其特征在于，所说的系统还包括一个衬底基片托座，所说的法拉弟凹坑与所说的托座相连。
9、按照权利要求7所述的一种系统，其特征在于，所说的系统还包括一个测试片，在所说的测试片的表面上具有许多法拉弟凹坑。
10、按照权利要求3所述的一种系统，其特征在于，所说的至少一个传感器是一个光学传感器。
11、按照权利要求2所述的一种系统，其特征在于，所说的至少一个调谐电路包括一个与所说的相应的射频源并联的调谐电容器。
12、一种等离子体源，它包括：
一个屏蔽件，其第一端敞开而在第二端具有一个屏蔽小孔；
一个射频天线，它被放置在该屏蔽件内；以及
一个绝缘窗，它被放置成使所说屏蔽件的所说第一端封闭，所说的绝缘窗限定了一个绝缘窗小孔，并具有一个绝缘的气体入口管，所说的气体入口管从所说的绝缘窗小孔延伸而穿过所说的屏蔽件小孔，从而使气体可流通过所说的屏蔽件并通过所说的绝缘窗小孔。
13、一条连续的等离子体处理系统线，它包括：
一个壳体，所说的壳体包括多个位于该壳体内的挡板；
多个射频等离子体源，它们沿着所说的壳体被放置在所说的挡板之间；
每个所说的等离子体源包括：
一个屏蔽件，它在第一端敞开而在第二端具有一个屏蔽件小孔；
一个射频天线，它被放置在该屏蔽件内；以及
一个绝缘窗，它被放置成使所说屏蔽件的所说第一端封闭，所说的绝缘窗限定了一个绝缘窗小孔，并具有一个绝缘的气体入口管，所说的气体入口管从所说的绝缘窗小孔延伸而穿过所说的屏蔽件小孔，从而使气体可流通过所说的屏蔽件和通过所说的绝缘窗小孔而进入所说的壳体，以及
一个被放置在所说的壳体内的传送带装置，所说的传送带装置在所说的壳体内并在由所说的挡板之间的每个所说的射频等离子体源所产生的等离子体的下方传输衬底基片。
14、按照权利要求1所述的一种系统，其特征在于，所说的射频源是独立可调的，以保持所说的局部的等离子体的均匀性。

Claims (13)

1、一种利用等离子体处理衬底基片的系统，所说的系统包括：
一个真空腔，在所说的腔的表面上有多个射频可透过的窗；
一个射频发生器；
至少两个等离子体源，每个所说的等离子体源都与所说的射频发生器电连接，并被并置于所说的许多射频可透过的窗中相应的一个上。
2、按照权利要求1所述的一种系统，其特征在于，它还包括至少一个调谐电路，所说的至少一个调谐电路的每一个与所说的至少两个等离子体源中之一个源电连接。
3、按照权利要求2所述的一种系统，其特征在于，它还包括：
至少一个传感器，用于测量所说的等离子体的至少一个特性；以及
一个控制器，它从所说的至少一个传感器接受所说的等离子体的至少一个特性信号并随之而控制所说的多个调谐电路。
4、按照权利要求1所述的一种系统，其特征在于，所说的多个射频可透过的窗中的每一个窗均由石英构成的。
5、按照权利要求1所述的一种系统，其特征在于，所说的许多射频可透过的窗中的每一个窗均是由玻璃构成的。
6、按照权利要求1所述的一种系统，其特征在于，所说的至少一个传感器是朗谬尔探针。
7、按照权利要求1所述的一种系统，其特征在于，所说的至少一个传感器是一组法拉弟凹坑。
8、按照权利要求7所述的一种系统，其特征在于，所说的系统还包括一个衬底片托座，所说的法拉弟凹坑位于所说的托座上。
9、按照权利要求7所述的一种系统，其特征在于，所说的系统还包括一个测试片，在所说的测试片的表面上具有许多法拉弟凹坑。
10、按照权利要求1所述的一种系统，其特征在于，所说的至少一个传感器是一个光学传感器。
11、按照权利要求2所述的一种系统，其特征在于，所说的调谐电路中的每一个都包括一个与所说的相应的等离子体源并联电连接的调谐电容器。
12、一种等离子体源，它包括：
一个屏蔽件，其第一端敞开而在第二端有一个小孔；
一个射频天线，它被放置在该屏蔽件内；以及
一个绝缘窗，它被放置成使所说的屏蔽件的所说的第一端封闭，所说的绝缘窗限定了一个小孔并具有一个绝缘的气体入口管，所说的气体入口管从在所说的绝缘窗中的所说的小孔延伸而穿过所说的屏蔽件小孔，从而使气体可流通过所说的屏蔽件和通过所说的绝缘窗小孔。
13、一条连续的等离子体处理系统线，它包括：
一个壳体，所说的壳体包括多个位于该壳体内的挡板；
多个射频等离子体源，它们沿着所说的壳体被放置在所说的挡板之间；
每个所说的等离子体源包括：
一个屏蔽件，它在第一端敞开而在第二端有一个小孔；
一个射频天线，它被放置在该屏蔽件内；以及
一个绝缘窗，它被放置成使所说的屏蔽件的所说的第一端封闭，所说的绝缘窗限定了一个小孔，并具有一个绝缘的气体入口管，所说的气体入口管从在所说的绝缘窗中的所说的小孔延伸而穿过所说的屏蔽件小孔，以使气体可流通过所说的屏蔽和流通过所说的绝缘窗小孔而进入所说的壳体；以及
一个被放置在所说的壳体内的传送带装置，所说的传送带装置在所说的壳体内并在由所说的挡板之间的每个所说的射频等离子体源所产生的等离子体的下方传输衬底基片。
CN96196235A 1995-07-19 1996-07-02 利用等离子体处理大面积衬底基片的系统 Pending CN1192788A (zh)

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CN101728206B (zh) * 2004-11-24 2011-11-23 欧瑞康太阳能股份公司(特吕巴赫) 用于非常大面积基片的真空处理室
CN102598240A (zh) * 2009-10-28 2012-07-18 应用材料公司 垂直整合的处理腔室
CN102074445A (zh) * 2009-11-23 2011-05-25 周星工程股份有限公司 用于处理基板的装置
CN102792427A (zh) * 2010-03-31 2012-11-21 东京毅力科创株式会社 等离子体处理装置用电介质窗、等离子体处理装置和等离子体处理装置用电介质窗的安装方法

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EP0842307B1 (en) 2002-11-27
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US6338313B1 (en) 2002-01-15
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US6632324B2 (en) 2003-10-14
EP0842307A4 (en) 1999-12-01
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WO1997004478A2 (en) 1997-02-06
DE69625068D1 (de) 2003-01-09

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