CN1195175A - 流水线式快速存取浮栅存储器结构及其工作方法 - Google Patents
流水线式快速存取浮栅存储器结构及其工作方法 Download PDFInfo
- Publication number
- CN1195175A CN1195175A CN97125660A CN97125660A CN1195175A CN 1195175 A CN1195175 A CN 1195175A CN 97125660 A CN97125660 A CN 97125660A CN 97125660 A CN97125660 A CN 97125660A CN 1195175 A CN1195175 A CN 1195175A
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- CN
- China
- Prior art keywords
- many
- volatile memory
- memory cells
- data
- reading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1039—Read-write modes for single port memories, i.e. having either a random port or a serial port using pipelining techniques, i.e. using latches between functional memory parts, e.g. row/column decoders, I/O buffers, sense amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Memory System (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US780120 | 1996-12-26 | ||
US08/780,120 US5901086A (en) | 1996-12-26 | 1996-12-26 | Pipelined fast-access floating gate memory architecture and method of operation |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1195175A true CN1195175A (zh) | 1998-10-07 |
CN1112708C CN1112708C (zh) | 2003-06-25 |
Family
ID=25118668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN97125660A Expired - Fee Related CN1112708C (zh) | 1996-12-26 | 1997-12-25 | 流水线式快速存取浮栅存储器结构及其工作方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US5901086A (zh) |
JP (1) | JPH10188588A (zh) |
KR (1) | KR100501749B1 (zh) |
CN (1) | CN1112708C (zh) |
TW (1) | TW444202B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100424785C (zh) * | 2002-06-18 | 2008-10-08 | 爱特梅尔公司 | 存储器编程用的行译码器电路 |
CN102063930B (zh) * | 2001-12-19 | 2014-07-23 | 株式会社东芝 | 半导体集成电路 |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
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US6801979B1 (en) * | 1995-07-31 | 2004-10-05 | Lexar Media, Inc. | Method and apparatus for memory control circuit |
US6728851B1 (en) * | 1995-07-31 | 2004-04-27 | Lexar Media, Inc. | Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices |
US6978342B1 (en) | 1995-07-31 | 2005-12-20 | Lexar Media, Inc. | Moving sectors within a block of information in a flash memory mass storage architecture |
US5845313A (en) | 1995-07-31 | 1998-12-01 | Lexar | Direct logical block addressing flash memory mass storage architecture |
US8171203B2 (en) * | 1995-07-31 | 2012-05-01 | Micron Technology, Inc. | Faster write operations to nonvolatile memory using FSInfo sector manipulation |
JP3247639B2 (ja) * | 1997-08-07 | 2002-01-21 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 半導体メモリ、半導体メモリのデータ読み出し方法及び書き込み方法 |
US7268809B2 (en) * | 1998-09-23 | 2007-09-11 | San Disk Corporation | Analog buffer memory for high-speed digital image capture |
JP2000149565A (ja) * | 1998-11-02 | 2000-05-30 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6760068B2 (en) | 1998-12-31 | 2004-07-06 | Sandisk Corporation | Correction of corrupted elements in sensors using analog/multi-level non-volatile memory |
US6259645B1 (en) * | 2000-02-10 | 2001-07-10 | Advanced Micro Devices, Inc. | Matching loading between sensing reference and memory cell with reduced transistor count in a dual-bank flash memory |
US6285579B1 (en) * | 2000-02-17 | 2001-09-04 | Hewlett-Packard Company | System and method for enabling/disabling SRAM banks for memory access |
DE60017704D1 (de) * | 2000-02-29 | 2005-03-03 | St Microelectronics Srl | Spaltedekodierer für das Lesen von Seiten in einem Halbleiterspeicher |
KR100869870B1 (ko) * | 2000-07-07 | 2008-11-24 | 모사이드 테크놀로지스, 인코포레이티드 | 메모리 소자에서의 읽기 명령 수행 방법 및 dram액세스 방법 |
US7167944B1 (en) | 2000-07-21 | 2007-01-23 | Lexar Media, Inc. | Block management for mass storage |
TW539946B (en) * | 2001-08-07 | 2003-07-01 | Solid State System Company Ltd | Window-based flash memory storage system, and the management method and the access method thereof |
US20030056071A1 (en) * | 2001-09-18 | 2003-03-20 | Triece Joseph W. | Adaptable boot loader |
GB0123421D0 (en) * | 2001-09-28 | 2001-11-21 | Memquest Ltd | Power management system |
GB0123416D0 (en) | 2001-09-28 | 2001-11-21 | Memquest Ltd | Non-volatile memory control |
GB0123410D0 (en) | 2001-09-28 | 2001-11-21 | Memquest Ltd | Memory system for data storage and retrieval |
GB0123415D0 (en) | 2001-09-28 | 2001-11-21 | Memquest Ltd | Method of writing data to non-volatile memory |
GB0123417D0 (en) * | 2001-09-28 | 2001-11-21 | Memquest Ltd | Improved data processing |
US7231643B1 (en) | 2002-02-22 | 2007-06-12 | Lexar Media, Inc. | Image rescue system including direct communication between an application program and a device driver |
US7333357B2 (en) * | 2003-12-11 | 2008-02-19 | Texas Instruments Incorproated | Static random access memory device having reduced leakage current during active mode and a method of operating thereof |
US7725628B1 (en) | 2004-04-20 | 2010-05-25 | Lexar Media, Inc. | Direct secondary device interface by a host |
US7370166B1 (en) | 2004-04-30 | 2008-05-06 | Lexar Media, Inc. | Secure portable storage device |
US7490283B2 (en) | 2004-05-13 | 2009-02-10 | Sandisk Corporation | Pipelined data relocation and improved chip architectures |
US7594063B1 (en) * | 2004-08-27 | 2009-09-22 | Lexar Media, Inc. | Storage capacity status |
US7464306B1 (en) * | 2004-08-27 | 2008-12-09 | Lexar Media, Inc. | Status of overall health of nonvolatile memory |
US7120051B2 (en) * | 2004-12-14 | 2006-10-10 | Sandisk Corporation | Pipelined programming of non-volatile memories using early data |
US7849381B2 (en) | 2004-12-21 | 2010-12-07 | Sandisk Corporation | Method for copying data in reprogrammable non-volatile memory |
KR100719378B1 (ko) * | 2006-02-16 | 2007-05-17 | 삼성전자주식회사 | 빠른 랜덤 액세스 기능을 갖는 플래시 메모리 장치 및그것을 포함한 컴퓨팅 시스템 |
US7369450B2 (en) * | 2006-05-26 | 2008-05-06 | Freescale Semiconductor, Inc. | Nonvolatile memory having latching sense amplifier and method of operation |
US7561472B2 (en) | 2006-09-11 | 2009-07-14 | Micron Technology, Inc. | NAND architecture memory with voltage sensing |
US7477551B2 (en) * | 2006-11-08 | 2009-01-13 | Texas Instruments Incorporated | Systems and methods for reading data from a memory array |
US7518933B2 (en) * | 2007-02-07 | 2009-04-14 | Freescale Semiconductor, Inc. | Circuit for use in a multiple block memory |
US20100208538A1 (en) * | 2009-02-17 | 2010-08-19 | Freescale Semiconductor, Inc. | Sensing circuit for semiconductor memory |
US8374051B2 (en) | 2011-03-03 | 2013-02-12 | Sandisk 3D Llc | Three dimensional memory system with column pipeline |
US9053766B2 (en) | 2011-03-03 | 2015-06-09 | Sandisk 3D, Llc | Three dimensional memory system with intelligent select circuit |
US8553476B2 (en) | 2011-03-03 | 2013-10-08 | Sandisk 3D Llc | Three dimensional memory system with page of data across word lines |
US10020038B1 (en) | 2017-04-14 | 2018-07-10 | Micron Technology, Inc. | Apparatuses and methods for controlling wordlines and sense amplifiers |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2615011B2 (ja) * | 1986-06-13 | 1997-05-28 | 株式会社日立製作所 | 半導体記憶回路 |
JP2618422B2 (ja) * | 1988-02-08 | 1997-06-11 | 富士通株式会社 | 半導体記憶装置 |
US5426610A (en) * | 1990-03-01 | 1995-06-20 | Texas Instruments Incorporated | Storage circuitry using sense amplifier with temporary pause for voltage supply isolation |
US5299320A (en) * | 1990-09-03 | 1994-03-29 | Matsushita Electric Industrial Co., Ltd. | Program control type vector processor for executing a vector pipeline operation for a series of vector data which is in accordance with a vector pipeline |
JP3280704B2 (ja) * | 1992-05-29 | 2002-05-13 | 株式会社東芝 | 半導体記憶装置 |
US5402389A (en) * | 1994-03-08 | 1995-03-28 | Motorola, Inc. | Synchronous memory having parallel output data paths |
US5592435A (en) * | 1994-06-03 | 1997-01-07 | Intel Corporation | Pipelined read architecture for memory |
US5500819A (en) * | 1994-09-30 | 1996-03-19 | Cirrus Logic, Inc. | Circuits, systems and methods for improving page accesses and block transfers in a memory system |
JPH08106413A (ja) * | 1994-10-06 | 1996-04-23 | Fujitsu Ltd | データ処理装置,データ転送方法及びメモリ装置 |
JPH08263985A (ja) * | 1995-03-24 | 1996-10-11 | Nec Corp | 半導体記憶装置 |
US5604701A (en) * | 1995-07-27 | 1997-02-18 | Microchip Technology Incorporated | Initializing a read pipeline of a non-volatile sequential memory device |
US5657292A (en) * | 1996-01-19 | 1997-08-12 | Sgs-Thomson Microelectronics, Inc. | Write pass through circuit |
US5838631A (en) * | 1996-04-19 | 1998-11-17 | Integrated Device Technology, Inc. | Fully synchronous pipelined ram |
US5784705A (en) * | 1996-07-15 | 1998-07-21 | Mosys, Incorporated | Method and structure for performing pipeline burst accesses in a semiconductor memory |
US5732017A (en) * | 1997-03-31 | 1998-03-24 | Atmel Corporation | Combined program and data nonvolatile memory with concurrent program-read/data write capability |
-
1996
- 1996-12-26 US US08/780,120 patent/US5901086A/en not_active Expired - Fee Related
-
1997
- 1997-10-23 TW TW086115705A patent/TW444202B/zh not_active IP Right Cessation
- 1997-12-24 JP JP36706897A patent/JPH10188588A/ja active Pending
- 1997-12-25 CN CN97125660A patent/CN1112708C/zh not_active Expired - Fee Related
- 1997-12-26 KR KR1019970073862A patent/KR100501749B1/ko not_active IP Right Cessation
-
1999
- 1999-02-01 US US09/241,150 patent/US6011719A/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102063930B (zh) * | 2001-12-19 | 2014-07-23 | 株式会社东芝 | 半导体集成电路 |
CN100424785C (zh) * | 2002-06-18 | 2008-10-08 | 爱特梅尔公司 | 存储器编程用的行译码器电路 |
Also Published As
Publication number | Publication date |
---|---|
CN1112708C (zh) | 2003-06-25 |
US6011719A (en) | 2000-01-04 |
KR19980064649A (ko) | 1998-10-07 |
US5901086A (en) | 1999-05-04 |
JPH10188588A (ja) | 1998-07-21 |
TW444202B (en) | 2001-07-01 |
KR100501749B1 (ko) | 2005-10-28 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: FREEDOM SEMICONDUCTORS CO. Free format text: FORMER OWNER: MOTOROLA, INC. Effective date: 20040813 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20040813 Address after: Texas in the United States Patentee after: FreeScale Semiconductor Address before: Illinois Instrunment Patentee before: Motorola, Inc. |
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C56 | Change in the name or address of the patentee |
Owner name: FISICAL SEMICONDUCTOR INC. Free format text: FORMER NAME: FREEDOM SEMICONDUCTOR CORP. |
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CP01 | Change in the name or title of a patent holder |
Address after: Texas in the United States Patentee after: FREESCALE SEMICONDUCTOR, Inc. Address before: Texas in the United States Patentee before: FreeScale Semiconductor |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20030625 Termination date: 20151225 |
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