CN1199921A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN1199921A CN1199921A CN98108484A CN98108484A CN1199921A CN 1199921 A CN1199921 A CN 1199921A CN 98108484 A CN98108484 A CN 98108484A CN 98108484 A CN98108484 A CN 98108484A CN 1199921 A CN1199921 A CN 1199921A
- Authority
- CN
- China
- Prior art keywords
- substrate
- insulating barrier
- opening
- conductive layer
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
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- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H01L2924/01005—Boron [B]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01022—Titanium [Ti]
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- H01L2924/01029—Copper [Cu]
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- H01L2924/01033—Arsenic [As]
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- H01L2924/01049—Indium [In]
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- H01L2924/01074—Tungsten [W]
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- H01L2924/01078—Platinum [Pt]
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- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
Description
Claims (21)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP128176/97 | 1997-05-19 | ||
JP128176/1997 | 1997-05-19 | ||
JP9128176A JPH10321631A (ja) | 1997-05-19 | 1997-05-19 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1199921A true CN1199921A (zh) | 1998-11-25 |
CN1118088C CN1118088C (zh) | 2003-08-13 |
Family
ID=14978303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN98108484A Expired - Fee Related CN1118088C (zh) | 1997-05-19 | 1998-05-14 | 半导体装置及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (6) | US6097091A (zh) |
JP (1) | JPH10321631A (zh) |
KR (2) | KR100432329B1 (zh) |
CN (1) | CN1118088C (zh) |
TW (1) | TW351832B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100424862C (zh) * | 2004-10-28 | 2008-10-08 | 精工爱普生株式会社 | 半导体装置及制造方法、电路基板、电光学装置、电子机器 |
CN1747192B (zh) * | 2004-09-09 | 2010-08-11 | 丰田合成株式会社 | 发光装置 |
CN103730448A (zh) * | 2012-10-11 | 2014-04-16 | 财团法人工业技术研究院 | 封装基板及其制作方法 |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6713300B1 (en) * | 1997-02-27 | 2004-03-30 | University Of Utah Research Foundation | Nucleic acid and amino acid sequences for ATP-binding cassette transporter and methods of screening for agents that modify ATP-binding cassette transporter |
US6414585B1 (en) * | 1997-05-13 | 2002-07-02 | Chipscale, Inc. | Integrated passive components and package with posts |
JPH10321631A (ja) * | 1997-05-19 | 1998-12-04 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US6341071B1 (en) * | 1999-03-19 | 2002-01-22 | International Business Machines Corporation | Stress relieved ball grid array package |
US6528349B1 (en) * | 1999-10-26 | 2003-03-04 | Georgia Tech Research Corporation | Monolithically-fabricated compliant wafer-level package with wafer level reliability and functionality testability |
US6291260B1 (en) * | 2000-01-13 | 2001-09-18 | Siliconware Precision Industries Co., Ltd. | Crack-preventive substrate and process for fabricating solder mask |
US6303469B1 (en) * | 2000-06-07 | 2001-10-16 | Micron Technology, Inc. | Thin microelectronic substrates and methods of manufacture |
DE10120408B4 (de) * | 2001-04-25 | 2006-02-02 | Infineon Technologies Ag | Elektronisches Bauteil mit einem Halbleiterchip, elektronische Baugruppe aus gestapelten Halbleiterchips und Verfahren zu deren Herstellung |
WO2003068025A2 (en) * | 2002-02-13 | 2003-08-21 | Herman Miller, Inc. | Tilt chair having a flexible back, adjustable armrests and asjustable seat depth, and methods for the use thereof |
US6780673B2 (en) * | 2002-06-12 | 2004-08-24 | Texas Instruments Incorporated | Method of forming a semiconductor device package using a plate layer surrounding contact pads |
JP3969295B2 (ja) * | 2002-12-02 | 2007-09-05 | セイコーエプソン株式会社 | 半導体装置及びその製造方法と回路基板及び電気光学装置、並びに電子機器 |
US6888223B2 (en) * | 2003-04-01 | 2005-05-03 | International Business Machines Corporation | Use of photoresist in substrate vias during backside grind |
US7102371B1 (en) * | 2004-05-19 | 2006-09-05 | National Semiconductor Corporation | Bilevel probe |
JP3994989B2 (ja) | 2004-06-14 | 2007-10-24 | セイコーエプソン株式会社 | 半導体装置、回路基板、電気光学装置および電子機器 |
JP4619223B2 (ja) * | 2004-12-16 | 2011-01-26 | 新光電気工業株式会社 | 半導体パッケージ及びその製造方法 |
US7316572B2 (en) * | 2005-02-03 | 2008-01-08 | International Business Machines Corporation | Compliant electrical contacts |
JP4224717B2 (ja) * | 2005-07-11 | 2009-02-18 | セイコーエプソン株式会社 | 半導体装置 |
JP4328970B2 (ja) | 2005-08-02 | 2009-09-09 | セイコーエプソン株式会社 | 半導体装置 |
JP4273347B2 (ja) * | 2005-08-03 | 2009-06-03 | セイコーエプソン株式会社 | 半導体装置 |
JP2007081039A (ja) * | 2005-09-13 | 2007-03-29 | Seiko Epson Corp | 半導体装置 |
US7773217B2 (en) * | 2006-02-17 | 2010-08-10 | Axsun Technologies, Inc. | Probe for tunable laser Raman spectroscopy system |
JP4631742B2 (ja) * | 2006-02-27 | 2011-02-16 | エプソンイメージングデバイス株式会社 | 電気光学装置、実装構造体、電気光学装置の製造方法及び電子機器 |
JP5098204B2 (ja) * | 2006-04-07 | 2012-12-12 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、並びに、電子機器 |
TWI311367B (en) * | 2006-07-17 | 2009-06-21 | Chipmos Technologies Inc | Chip structure |
US7813730B2 (en) * | 2006-10-17 | 2010-10-12 | Mavenir Systems, Inc. | Providing mobile core services independent of a mobile device |
JP4655052B2 (ja) * | 2007-02-16 | 2011-03-23 | セイコーエプソン株式会社 | 半導体装置、回路基板、電気光学装置および電子機器 |
JP4273356B2 (ja) * | 2007-02-21 | 2009-06-03 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
TWI356481B (en) * | 2007-05-18 | 2012-01-11 | Taiwan Tft Lcd Ass | Bump structure |
US8169285B2 (en) * | 2007-05-25 | 2012-05-01 | Infineon Technologies Austria Ag | Semiconductor device with integrated coils |
JP4645635B2 (ja) * | 2007-11-02 | 2011-03-09 | セイコーエプソン株式会社 | 電子部品 |
TWI429339B (zh) * | 2008-12-31 | 2014-03-01 | Taiwan Tft Lcd Ass | 電路板用之基材、電路板以及電路板的製造方法 |
US20100236822A1 (en) * | 2009-03-23 | 2010-09-23 | Ibiden Co., Ltd. | Wiring board and method for manufacturing the same |
US8338828B2 (en) | 2010-08-05 | 2012-12-25 | Freescale Semiconductor, Inc. | Semiconductor package and method of testing same |
US8198739B2 (en) | 2010-08-13 | 2012-06-12 | Endicott Interconnect Technologies, Inc. | Semi-conductor chip with compressible contact structure and electronic package utilizing same |
US8435824B2 (en) * | 2011-07-07 | 2013-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside illumination sensor having a bonding pad structure and method of making the same |
US9252180B2 (en) * | 2013-02-08 | 2016-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding pad on a back side illuminated image sensor |
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JPS5943545A (ja) * | 1982-09-06 | 1984-03-10 | Hitachi Ltd | 半導体集積回路装置 |
KR900004968B1 (ko) * | 1984-02-10 | 1990-07-12 | 후지쓰 가부시끼가이샤 | 반도체장치 제조방법 |
JPS6352445A (ja) | 1986-08-22 | 1988-03-05 | Hitachi Ltd | 半導体装置 |
US4740700A (en) * | 1986-09-02 | 1988-04-26 | Hughes Aircraft Company | Thermally insulative and electrically conductive interconnect and process for making same |
JP2762792B2 (ja) * | 1991-08-30 | 1998-06-04 | 日本電気株式会社 | 光半導体装置 |
US5291066A (en) * | 1991-11-14 | 1994-03-01 | General Electric Company | Moisture-proof electrical circuit high density interconnect module and method for making same |
JP2833326B2 (ja) | 1992-03-03 | 1998-12-09 | 松下電器産業株式会社 | 電子部品実装接続体およびその製造方法 |
JPH05326385A (ja) * | 1992-05-25 | 1993-12-10 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP3025120B2 (ja) * | 1992-12-21 | 2000-03-27 | キヤノン株式会社 | 記録再生装置 |
JPH07161728A (ja) * | 1993-12-10 | 1995-06-23 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5396702A (en) * | 1993-12-15 | 1995-03-14 | At&T Corp. | Method for forming solder bumps on a substrate using an electrodeposition technique |
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US5431328A (en) | 1994-05-06 | 1995-07-11 | Industrial Technology Research Institute | Composite bump flip chip bonding |
JP2531382B2 (ja) * | 1994-05-26 | 1996-09-04 | 日本電気株式会社 | ボ―ルグリッドアレイ半導体装置およびその製造方法 |
JP2647001B2 (ja) * | 1994-05-31 | 1997-08-27 | 日本電気株式会社 | テープキャリアならびに半導体デバイスの実装構造およびその製造方法 |
US5567653A (en) * | 1994-09-14 | 1996-10-22 | International Business Machines Corporation | Process for aligning etch masks on an integrated circuit surface using electromagnetic energy |
US5534731A (en) * | 1994-10-28 | 1996-07-09 | Advanced Micro Devices, Incorporated | Layered low dielectric constant technology |
JP3217624B2 (ja) * | 1994-11-12 | 2001-10-09 | 東芝マイクロエレクトロニクス株式会社 | 半導体装置 |
US5534465A (en) * | 1995-01-10 | 1996-07-09 | At&T Corp. | Method for making multichip circuits using active semiconductor substrates |
US5864178A (en) * | 1995-01-12 | 1999-01-26 | Kabushiki Kaisha Toshiba | Semiconductor device with improved encapsulating resin |
US5659203A (en) * | 1995-06-07 | 1997-08-19 | International Business Machines Corporation | Reworkable polymer chip encapsulant |
JP3310499B2 (ja) * | 1995-08-01 | 2002-08-05 | 富士通株式会社 | 半導体装置 |
US6024274A (en) * | 1996-04-03 | 2000-02-15 | Industrial Technology Research Institute | Method for tape automated bonding to composite bumps |
US5859472A (en) * | 1996-09-12 | 1999-01-12 | Tessera, Inc. | Curved lead configurations |
US5790377A (en) * | 1996-09-12 | 1998-08-04 | Packard Hughes Interconnect Company | Integral copper column with solder bump flip chip |
TW571373B (en) * | 1996-12-04 | 2004-01-11 | Seiko Epson Corp | Semiconductor device, circuit substrate, and electronic machine |
TW324847B (en) * | 1996-12-13 | 1998-01-11 | Ind Tech Res Inst | The structure of composite bump |
TW477907B (en) * | 1997-03-07 | 2002-03-01 | Toshiba Corp | Array substrate, liquid crystal display device and their manufacturing method |
US6051489A (en) * | 1997-05-13 | 2000-04-18 | Chipscale, Inc. | Electronic component package with posts on the active side of the substrate |
JPH10321631A (ja) * | 1997-05-19 | 1998-12-04 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US5909056A (en) * | 1997-06-03 | 1999-06-01 | Lsi Logic Corporation | High performance heat spreader for flip chip packages |
US6123624A (en) * | 1998-04-27 | 2000-09-26 | Santini; Louis A. | Bowling pin and method of playing a bowling game |
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1997
- 1997-05-19 JP JP9128176A patent/JPH10321631A/ja active Pending
- 1997-10-29 US US08/959,667 patent/US6097091A/en not_active Expired - Fee Related
- 1997-10-30 TW TW086116156A patent/TW351832B/zh not_active IP Right Cessation
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1998
- 1998-03-04 KR KR10-1998-0007096A patent/KR100432329B1/ko not_active IP Right Cessation
- 1998-05-14 CN CN98108484A patent/CN1118088C/zh not_active Expired - Fee Related
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2000
- 2000-05-30 US US09/580,624 patent/US6281111B1/en not_active Expired - Fee Related
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2001
- 2001-08-03 US US09/920,713 patent/US6713319B2/en not_active Expired - Fee Related
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2003
- 2003-03-17 US US10/388,407 patent/US7129579B2/en not_active Expired - Fee Related
- 2003-09-29 KR KR1020030067488A patent/KR100418000B1/ko not_active IP Right Cessation
- 2003-10-22 US US10/689,936 patent/US6979592B2/en not_active Expired - Fee Related
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2004
- 2004-10-05 US US10/957,620 patent/US20050059200A1/en not_active Abandoned
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1747192B (zh) * | 2004-09-09 | 2010-08-11 | 丰田合成株式会社 | 发光装置 |
US7875897B2 (en) | 2004-09-09 | 2011-01-25 | Toyoda Gosei Co., Ltd. | Light emitting device |
CN100424862C (zh) * | 2004-10-28 | 2008-10-08 | 精工爱普生株式会社 | 半导体装置及制造方法、电路基板、电光学装置、电子机器 |
CN103730448A (zh) * | 2012-10-11 | 2014-04-16 | 财团法人工业技术研究院 | 封装基板及其制作方法 |
CN103730448B (zh) * | 2012-10-11 | 2017-01-18 | 财团法人工业技术研究院 | 封装基板及其制作方法 |
Also Published As
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US6097091A (en) | 2000-08-01 |
CN1118088C (zh) | 2003-08-13 |
US7129579B2 (en) | 2006-10-31 |
US20030168735A1 (en) | 2003-09-11 |
KR100432329B1 (ko) | 2004-09-16 |
US6979592B2 (en) | 2005-12-27 |
US6281111B1 (en) | 2001-08-28 |
US20040084767A1 (en) | 2004-05-06 |
US20010045664A1 (en) | 2001-11-29 |
TW351832B (en) | 1999-02-01 |
US20050059200A1 (en) | 2005-03-17 |
JPH10321631A (ja) | 1998-12-04 |
KR100418000B1 (ko) | 2004-02-14 |
US6713319B2 (en) | 2004-03-30 |
KR19980086518A (ko) | 1998-12-05 |
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