CN1200135C - 利用原子层沉积制备薄膜的方法 - Google Patents

利用原子层沉积制备薄膜的方法 Download PDF

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CN1200135C
CN1200135C CNB981227570A CN98122757A CN1200135C CN 1200135 C CN1200135 C CN 1200135C CN B981227570 A CNB981227570 A CN B981227570A CN 98122757 A CN98122757 A CN 98122757A CN 1200135 C CN1200135 C CN 1200135C
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reagent
thin film
manufacturing thin
reaction chamber
chemisorption
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CN1244598A (zh
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金荣宽
李相忍
朴昌洙
李相旼
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Samsung Electronics Co Ltd
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Abstract

本发明提供了一种薄膜制备方法。该方法通过在基片上致密化学吸附第一种反应剂和第二种反应剂，从而利用化学交换形成固态薄膜。根据本发明，由于该第一种反应剂和该第二种反应剂是致密化学吸附的并且通过清洗或抽气完全去除了杂质，故有可能制备膜密度高的精确化学计量薄膜。

Description

利用原子层沉积制备薄膜的方法
技术领域
本发明涉及一种薄膜制备方法，更准确地说，涉及一种利用原子层沉积(ALD)制备薄膜的方法。
背景技术
薄膜典型地用于半导体器件的介电体薄膜、液晶显示器的透明导电膜或者电致发光薄膜显示器的保护膜。这些薄膜是通过蒸镀、化学气相沉积或者ALD法制备的。
ALD法是一种表面控制工艺，并通过膜的沉积而使用二维膜。通过ALD法可以在表面动力学领域进行沉积，所以逐次叠积性很优异。另外，通过周期性地供给反应剂同时不使其热解，可以通过化学交换分解该反应剂，从而所得的薄膜具有高的密度和精确的化学计量。进而，由于化学交换产生的副产物是一种易于除去的气体，所以能很容易清洗反应室。温度是ALD法中唯一的工艺参量，因而能很容易控制和维持该工艺。
然而，在传统ALD法中，由于基片表面没有吸附足够量的反应剂，所以薄膜内产生例如针孔等缺陷，从而劣化了薄膜的物理性能例如膜密度。另外，在传统ALD法中，由于化学配位体没有完全去除，所以不可能制得精确化学计量的薄膜。
发明内容
为了解决上述问题，本发明的一个目的是提供一种薄膜制备方法，利用该方法通过原子层沉积有可能制得膜密度高的精确化学计量薄膜。
相应地，为了达到上述目的，根据本发明的薄膜制备方法的步骤包括通过把第一种反应剂注入已装有基片的反应室而在基片上化学吸附该第一种反应剂。通过清洗反应室或抽气去除在化学吸附第一种反应剂上物理吸附的第一种反应剂。当通过把第一种反应剂注入反应室而使该第一种反应剂致密地化学吸附在基片上之后，通过清洗反应室或抽气去除在致密化学吸附第一种反应剂上物理吸附的第一种反应剂。通过把第二种反应剂注入反应室而在基片表面上化学吸附该第二种反应剂。通过清洗反应室或抽气去除在致密化学吸附第一种反应剂和第二种反应剂上物理吸附的第二种反应剂。通过把该第二种反应剂再次注入反应室而使该第二种反应剂致密吸附在基片上，从而利用化学交换形成固态薄膜。
在致密吸附该第二种反应剂之后，通过清洗反应室或抽气去除物理吸附的第二种反应剂和化学交换过程中产生的残余产物。注入该第二种反应剂和去除物理吸附第二种反应剂、残余产物的工艺可以连续重复两次或多次。注入第一种反应剂和去除物理吸附第一种反应剂的工艺可以连续重复两次或多次。基片是(100)硅基片。该第一种反应剂和第二种反应剂由用来形成固态薄膜的原子和化学配位体组成。
该固态薄膜的组成选自由单质薄膜、单一氧化物、复合氧化物、单一氮化物、复合氮化物构成的族中的一种。单质薄膜是选自由Mo、Al、Cu、Ti、Ta、Pt、Ru、Rh、Ir、W和Ag构成的族中的一种。单一氧化物是选自由Al2O3、TiO2、Ta2O5、ZrO2、HfO2、Nb2O5、CeO2、Y2O3、SiO2、In2O3、RuO2和IrO2构成的族中的一种。复合氧化物是选自由SrTiO3、PbTiO3、SrRuO3、CaRuO3、(Ba，Sr)TiO3、Pb(Zr，Ti)O3、(Pb，La)(Zr，Ti)O3、(Sr，Ca)RuO3、掺杂有Sn的In2O3、掺杂有Fe的In2O3、掺杂有Zr的In2O3构成的族中的一种。单一氮化物是选自由SiN、NbN、ZrN、TaN、Ya3N5、AlN、GaN、WN、BN构成的族中的一种。复合氮化物是选自由WBN、WSiN、TiSiN、TaSiN、AlSiN、AlTiN构成的族中的一种。
根据本发明，由于该第一种反应剂和该第二种反应剂是紧密吸附的并且通过清洗或抽气完全去除了杂质，故有可能制得膜密度高的精确化学计量薄膜。
参见附图，通过详细描述一个优选具体实施方案，本发明的上述目的和优点将更显而易见。
附图说明
图1～8是利用根据本发明的原子层沉积法的薄膜制备工艺。
图9A和图9B是以与图8中薄膜制备方式不同的方式利用原子层沉积法制备的薄膜实例。
图10是根据本发明的薄膜制备方法所用的薄膜制备装置的示意图。
图11是根据本发明薄膜制备方法的流程图。
图12是通过本发明薄膜制备方法每一循环制备的氧化铝膜的厚度图。
图13是具有根据本发明薄膜制备方法制备的氧化铝薄膜的基片的膜厚均匀性图。
图14和图15分别是根据本发明制备方法和传统方法制备的氧化铝薄膜的波长折射率。
具体实施方式
图1～8表示利用根据本发明的原子层沉积法制备薄膜的工艺。在图1～8中，当要沉积的薄膜是一种由A和B构成的二元化合物时，第一种反应剂和第二种反应剂分别称为ARn(g)和BPn(g)。其中Rn是由n个R官能团形成的一种化学配位体，Pn是由n个P官能团形成的一种化学配位体，g表示气态。
参见图1，通过把第一种反应剂ARn(g)注入已装有基片1的反应室(未标出)而把该第一种反应剂化学吸附和物理吸附到基片1(例如一种(100)硅基片)的表面。该第一种反应剂化学吸附到基片的表面。吸附在化学吸附第一种反应剂上的第一种反应剂是物理吸附的。由于该第一种反应剂ARn(g)是一次注入的，因而有部分能进行化学吸附的空间被物理吸附的ARn(g)覆盖。相应地，基片上形成了空白空间3。
参见图2，通过清洗其内部已形成有化学吸附和物理吸附第一种反应剂的反应室或抽气可以完全去除该物理吸附第一种反应剂。这样可以使基片1表面上只剩下化学吸附第一种反应剂。该化学吸附第一种反应剂ARn(s)是一种固态，并且暴露出基片1表面的许多部分。其中s表示固态。
参见图3，通过把该第一种反应剂ARn(g)再次注入包含有其上已形成有该固态ARn(s)的基片的反应室，可把该第一种反应剂致密化学吸附和物理吸附到基片1的表面。这样可使该第一种反应剂化学吸附和物理吸附到图1中所示的空白空间3内。与图1中同样，该第一种反应剂化学吸附到基片1的表面。吸附在化学吸附第一种反应剂上的第一种反应剂是物理吸附的。
参见图4，通过清洗包含有其上已形成有化学吸附第一种反应剂的基片1的反应室或抽气可以完全去除物理吸附第一种反应剂。注入第一种反应剂和去除物理吸附第一种反应剂的工艺连续进行两次以便基片1表面上只剩有致密化学吸附第一种反应剂即ARn(s)并且完全去除了例如化学配位体等杂质。其中，s表示固态。在本具体实施方案中，图1～4中所示的工艺可以重复两次以上。
参见图5，通过把第二种反应剂BPn(g)注入包含有其上已形成有致密化学吸附第一种反应剂的基片1的反应室而化学吸附和物理吸附该第二种反应剂。吸附到基片表面上的该第二种反应剂是化学吸附的。吸附在化学吸附第二种反应剂上的第二种反应剂是物理吸附的。这样，该化学吸附第一种反应剂和第二种反应剂通过化学交换形成一个单分子层，该单层在由A原子和B原子构成的原子层的尺度上并不致密。这时，在高蒸气压状态下去除了作为化学配位体的Rn和Pn。由于图5中该第二种反应剂并不是象图1的第一种反应剂那样致密化学吸附到基片表面，故第二种反应剂与第一种反应剂的化学交换不充分。从而，由于第二种反应剂与第一种反应剂的化学交换不充分，故在单分子层内产生了杂质或者没有满足化学计量组成比。
参见图6，通过清洗其内部已形成有不致密单分子层和物理吸附第二种反应剂的反应室或抽气可以去除该物理吸附第二种反应剂。这样可以在基片表面上形成化学吸附的固态单分子层。由于图6中的固态单分子层是ARnBPn(s)，仍剩余有杂质RnPn(s)，故没有满足化学计量组成比，膜密度低。其中s表示固态。
参见图7，为了改善上述化学计量组成比和膜密度，通过把该第二种反应剂BPn(g)再次注入包含其上已形成有不致密固态单分子层的基片的反应室，可把该第二种反应剂化学吸附和物理吸附到基片表面。吸附到基片表面上的该第二种反应剂是化学吸附的。吸附到化学吸附第二种反应剂上的第二种反应剂是物理吸附的。这样，该化学吸附第一种反应剂和第二种反应剂通过化学交换法形成一个致密单分子层，该单层具有由A原子和B原子构成的原子层尺度的厚度。这时，在高蒸气压状态下去除了气态的化学配位体Rn和Pn。
由于图7的第二种反应剂是化学吸附到图5中化学吸附并不致密的基片表面上，故该第二种反应剂与致密的第一种反应剂的化学交换很充分，因而降低了单分子层内的杂质并满足化学计量组成比。
参见图8，通过清洗其内部形成有致密单分子层和物理吸附第二种反应剂的反应室或抽气可以完全去除该物理吸附第二种反应剂。这样，基片表面上只剩有致密且化学吸附的固态致密单分子层即AB(s)。其中，s表示固态。在本具体实施方案中，图5～8中的工艺可以重复两次以上。
在图8中，A和B形成在基片表面上，因而形成一个化合物AB(s)。然而，当使用根据本发明的原子层沉积法时，A可以形成在基片表面上，而B形成在A上，从而形成如图9A所示的化合物AB(s)，或者A和B可以形成在基片表面上，而B和A形成在A和B上，从而完全形成化合物AB(s)。
在下文将描述利用根据本发明的薄膜制备方法的薄膜制备工艺。
图10是根据本发明薄膜制备方法所用的薄膜制备装置的示意图。图11是根据本发明薄膜制备方法的流程。
当把基片3(例如一个(100)硅基片)装入反应室30内后，利用加热器5把基片加热到约150℃～375℃，优选地300℃(步骤100)。这时加热器5的温度维持在约450℃以便使基片温度保持在300℃。
把第一起泡器12内的第一种反应剂11例如Al(CH3)3(TMA)注入反应室0.1～10秒，优选地0.5秒，同时反应室30的温度保持在150℃～375℃(步骤105)。
其中，使用发泡法注入该第一种反应剂11。通过从气源19把100sccm的Ar载气注入到温度保持在20～22℃的第一起泡器12内使第一种反应剂11从液态转变为气态，然后利用选择性地开启阀9通过第一气体管13和喷头15注入该第一种反应剂11。通过第二气体管18和喷头15从气源19注入400sccm的氮气以便改善该第一种反应剂11的流速并在该第一种反应剂11的注入过程中稀释该第一种反应剂11。结果，在注入该第一种反应剂11的过程中有500sccm的气体供给到反应室30。这时，反应室的压力保持在1～2乇。这样可使该第一种反应剂11在原子尺度上化学吸附到基片3的表面。在化学吸附第一种反应剂上形成了物理吸附的第一种反应剂。
通过选择性地开启与反应室1相连的阀9同时反应室温度保持在150℃～375℃、压力保持在1～2乇，并通过第一气体管13或者第二气体管18从气源19把400sccm的氮气注入反应室0.1～10秒，优选地1.0秒，可以去除该物理吸附第一种反应剂(步骤110)。在本具体实施方案中，该物理吸附第一种反应剂是通过清洗去除的。然而，也可以不利用清洗而是通过反应室抽真空去除该物理吸附第一种反应剂。
象步骤105中那样把第一种反应剂11再次注入到已去除该物理吸附第一种反应剂的反应室30内(步骤115)。这时，步骤115中注入该第一种反应剂的时间等于或者小于步骤105中注入该第一种反应剂的时间。象步骤110中那样从反应室30内去除该物理吸附第一种反应剂(步骤120)。这时，步骤120中去除该物理吸附第一种反应剂的时间等于或者小于步骤110中去除该物理吸附第一种反应剂的时间。当反复进行该第一种反应剂的注入和该第一清洗工艺时，可以在基片上形成致密的化学吸附第一种反应剂。在本具体实施方案中，注入该第一种反应剂的工艺和去除该物理吸附第一种反应剂的工艺各进行两次。然而，这些工艺可以进行多次。
利用选择性地开启阀10同时温度保持在150℃～375℃、压力保持在1～2乇，通过气体管16和喷头15把第二起泡器14内的第二种反应剂17例如去离子水注入到包含其上已形成有致密化学吸附第一种反应剂的基片的反应室内1毫秒～10秒，优选地0.5秒，(步骤125)。
其中，该第二种反应剂17与第一种反应剂一样是利用发泡法注入的。即，通过从气源19把100sccm的Ar载气注入到温度保持在20～22℃的第二起泡器14内使第二种反应剂17从液态转变为气态，然后通过第三气体管16和喷头15注入该第二种反应剂17。通过第二气体管18和喷头15注入400sccm的氮气以便改善该第二种反应剂17的流速并在该第二种反应剂17的注入过程中稀释该第二种反应剂17。结果，在注入该第二种反应剂17的过程中有500sccm的气体总量供给到反应室30。这时，反应室30的压力保持在1～2乇。这样可使该第二种反应剂17化学吸附到其上已形成有致密化学吸附第一种反应剂的基片3的表面。在化学吸附第一种反应剂和第二种反应剂上形成物理吸附的第二种反应剂。该致密化学吸附第一种反应剂和不致密的化学吸附第二种反应剂通过化学交换法形成一层在原子层尺度上不致密的氧化铝膜。
通过选择性地开启与内部形成有在原子层尺度上并不致密的氧化铝膜的反应室1相连的阀10，在反应室温度保持150℃～375℃、压力保持1～2乇的同时通过第二气体管18或者第三气体管16从气源19把400sccm的氮气注入反应室0.1～10秒，优选地1.0秒，可以去除该物理吸附第二种反应剂(步骤130)。在本具体实施方案中，该物理吸附第二种反应剂是通过清洗去除的。然而，也可以不利用清洗而是通过反应室抽真空去除该物理吸附第二种反应剂。
象步骤125中那样把该第二种反应剂17再次注入到已去除该物理吸附第二种反应剂的反应室30内(步骤135)。这时，步骤135中注入该第二种反应剂的时间等于或者小于步骤125中注入该第二种反应剂的时间。象步骤130中那样从反应室30内去除该物理吸附第二种反应剂(步骤140)。当反复进行注入该第二种反应剂和去除该物理吸附第二种反应剂的工艺时，可以在基片上形成致密的化学吸附第二种反应剂。结果，该致密化学吸附第一种反应剂和该致密化学吸附第二种反应剂通过化学交换形成了在原子层尺度上致密的氧化铝膜。在本具体实施方案中，注入该第二种反应剂的工艺和去除该物理吸附第二种反应剂的工艺各进行两次。然而，这些工艺可以进行多次。
然后通过周期性地重复进行步骤105到步骤140来检查所制备的膜厚是否为约10～1000(步骤145)。当薄膜厚度适宜时，通过把反应室温度和压力返回到正常状态并且不重复上述循环而结束该薄膜制备工艺(步骤150)。
在图11中，该第一种反应剂和第二种反应剂利用Al(CH3)3(TMA)和去离子水来制得氧化铝膜Al2O3。如果该第一种反应剂和第二种反应剂是TiCl4和NH3则可制得TiN膜。如果该第一种反应剂和第二种反应剂是MoCl2和H2，则可制得Mo膜。
进而，根据本发明的薄膜制备方法，可以替代该氧化铝膜、TiN膜、Mo膜而制备组成为单质薄膜、单一氧化物、复合氧化物、单一氮化物、复合氮化物的一种固态薄膜。固态单质薄膜可以是Al、Cu、Ti、Ta、Pt、Ru、Rh、Ir、W和Ag。单一氧化物膜可以是TiO2、Ta2O5、ZrO2、HfO2、Nb2O5、CeO2、Y2O3、SiO2、In2O3、RuO2和IrO2。复合氧化物膜可以是SrTiO3、PbTiO3、SrRuO3、CaRuO3、(Ba，Sr)TiO3、Pb(Zr，Ti)O3、(Pb，La)(Zr，Ti)O3、(Sr，Ca)RuO3、掺杂有Sn的In2O3、掺杂有Fe的In2O3、掺杂有Zr的In2O3。另外，单一氮化物可以是SiN、NbN、ZrN、TaN、Ya3N5、AlN、GaN、WN、BN；复合氮化物可以是WBN、WSiN、TiSiN、TaSiN、AlSiN、AlTiN。
如上所述，在根据本发明的薄膜制备方法中，在均匀保持温度和压力的同时重复注入第一种反应剂和重复去除该物理吸附第一种反应剂，然后重复注入第二种反应剂和重复去除该物理吸附第二种反应剂。这样，由于第一种反应剂与致密沉积的第二种反应剂通过化学交换发生反应，同时第一种反应剂是致密地沉积在基片上，因此有可能制得膜密度高的精确化学计量薄膜。
图12是通过本发明薄膜制备方法每次循环制备的氧化铝膜的厚度图。
X轴表示循环次数。其中，一次循环包括的步骤有注入第一种反应剂、去除物理吸附的第一种反应剂、注入第一种反应剂、去除物理吸附的第一种反应剂、注入第二种反应剂、去除物理吸附的第二种反应剂、注入第二种反应剂、去除物理吸附的第二种反应剂。Y轴表示氧化铝膜厚度。如图12所示，根据本发明的薄膜制备方法，每次循环生长的铝厚度为1.1。这与理论值类似。
图13是具有通过本发明薄膜制备方法制备的氧化铝薄膜的基片的膜厚均匀性。
X轴表示在8英寸基片上测量膜厚的位置。测量位置有晶片中心、圆心在晶片中心并且半径为3.5英寸的圆周上间隔90°的四个点、圆心在晶片中心且半径为1.75英寸的圆周上间隔90°的四个点。Y轴表示氧化铝膜的厚度。如图13所示，该8英寸基片上的膜厚均匀性优异。
图14和图15分别是根据本发明制备方法和传统方法制备的氧化铝薄膜的波长折射率。X轴表示400nm～800nm的波长。Y轴表示折射率。
根据本发明方法制备的氧化铝薄膜的折射率在400nm～800nm范围内为1.67～1.73。特别地，如图14和图15所示，根据本发明方法制备的氧化铝薄膜的折射率在波长为500nm处为1.698，大于根据传统方法制备的氧化铝薄膜的折射率值1.649。相应地，可表明膜密度很高。另外，根据本发明方法制备的氧化铝薄膜的折射率类似于根据传统方法制备的氧化铝薄膜经850℃退火30分钟后的折射率测量值。因而，根据本发明方法制备的氧化铝薄膜不需要退火。
如上所述，根据本发明的薄膜制备方法，由于利用了原子层沉积法，故有可能制备具有优异逐次叠积性和厚度均匀性的薄膜。另外，根据本发明的薄膜制备方法，通过在注入反应剂之后利用清洗和抽气重复进行完全去除杂质的工艺并同时均匀保持反应室的温度和压力，有可能把反应剂致密地化学吸附到基片上。这样有可能制备膜密度高的精确化学计量薄膜。
本发明并不仅限于上述具体实施方案，很显然本领域的普通技术人员可以在本发明的范围和精神内做许多改动。

Claims (14)

1.一种薄膜制备方法，其步骤包括：
(a)通过把第一种反应剂注入已装有基片的反应室而在基片上化学吸附该第一种反应剂；
(b)通过清洗反应室或抽气去除在化学吸附的第一种反应剂上物理吸附的第一种反应剂；
(c)通过把第一种反应剂注入反应室而使该第一种反应剂致密地化学吸附在基片上；
(d)通过清洗反应室或抽气去除在致密化学吸附的第一种反应剂上物理吸附的第一种反应剂；
(e)通过把第二种反应剂注入反应室而在基片表面上化学吸附该第二种反应剂；
(f)通过清洗反应室或抽气去除在致密化学吸附的第一种反应剂和第二种反应剂上物理吸附的第二种反应剂；
(g)通过把该第二种反应剂再次注入反应室而使该第二种反应剂致密地吸附在基片上，从而利用化学交换形成固态薄膜；
其中所述第一种反应剂和第二种反应剂由用来形成固态薄膜的原子和化学配位体组成。
2.根据权利要求1的薄膜制备方法，其步骤进一步包括：
(h)通过清洗反应室或抽气去除物理吸附的第二种反应剂和步骤(g)的化学交换过程中产生的残余产物。
3.根据权利要求2的薄膜制备方法，其中，步骤(e)、(f)、(g)和(h)中注入第二种反应剂和去除物理吸附的该第二种反应剂、残余产物的工艺可以连续重复两次或多次。
4.根据权利要求1的薄膜制备方法，其中，步骤(a)、(b)、(c)和(d)中注入第一种反应剂和去除物理吸附的该第一种反应剂的工艺可以连续重复两次或多次。
5.根据权利要求1的薄膜制备方法，其中步骤(c)中注入第一种反应剂的时间等于或小于步骤(a)中注入第一种反应剂的时间。
6.根据权利要求1的薄膜制备方法，其中步骤(g)中注入第二种反应剂的时间等于或小于步骤(e)中注入第二种反应剂的时间。
7.根据权利要求1的薄膜制备方法，其中基片是硅基片。
8.根据权利要求1的薄膜制备方法，其中所述固态薄膜由选自单质薄膜、单一氧化物、复合氧化物、单一氮化物和复合氮化物中的一种组成。
9.根据权利要求8的薄膜制备方法，其中所述单质薄膜是选自Mo、Al、Cu、Ti、Ta、Pt、Ru、Rh、Ir、W和Ag中的一种。
10.根据权利要求8的薄膜制备方法，其中所述单一氧化物是选自Al2O3、TiO2、Ta2O5、ZrO2、HfO2、Nb2O5、CeO2、Y2O3、SiO2、In2O3、RuO2和IrO2中的一种。
11.根据权利要求10的薄膜制备方法，其中组成为Al2O3的薄膜的折射率在400～800nm的波长范围内为1.67～1.73。
12.根据权利要求8的薄膜制备方法，其中所述复合氧化物是选自SrTiO3、PbTiO3、SrRuO3、CaRuO3、(Ba，Sr)TiO3、Pb(Zr，Ti)O3、(Pb，La)(Zr，Ti)O3、(Sr，Ca)RuO3、掺杂有Sn的In2O3、掺杂有Fe的In2O3和掺杂有Zr的In2O3中的一种。
13.根据权利要求8的薄膜制备方法，其中所述单一氮化物是选自SiN、NbN、ZrN、TaN、Ya3N5、AlN、GaN、WN和BN中的一种。
14.根据权利要求8的薄膜制备方法，其中所述复合氮化物是选自WBN、WSiN、TiSiN、TaSiN、AlSiN和AlTiN中的一种。
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