CN1203532C - 一种镀敷绝缘物质的方法 - Google Patents

一种镀敷绝缘物质的方法 Download PDF

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CN1203532C
CN1203532C CNB01116607XA CN01116607A CN1203532C CN 1203532 C CN1203532 C CN 1203532C CN B01116607X A CNB01116607X A CN B01116607XA CN 01116607 A CN01116607 A CN 01116607A CN 1203532 C CN1203532 C CN 1203532C
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克莱尔·L·威金斯
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Abstract

本发明涉及一种在一半导体衬底上镀敷绝缘物质用以形成一电容器组件的方法。该方法包括从一金属靶上将一金属氧化物层反应溅镀到所述衬底上的步骤，其中支撑件被施加偏压，用以随着金属氧化物的形成穿经所镀敷的绝缘物质而感应出一直流电压。该电压可以在200至300伏的范围内。

Description

一种镀敷绝缘物质的方法
技术领域
本发明涉及一种在一半导体衬底上镀敷绝缘物质、用以形成一电容器组件的方法。
背景技术
为了减小半导体设备中所需的电容器的尺寸，目前该工业正朝着利用具有高介电常数(K)材料的方向发展。一种特别受欢迎的材料是五氧化钽(Ta2O5)，由于其介电常数约为25，所以该物质是一个非常有前景的候选者。该物质可以利用多种化学和物理方式进行镀敷，但是在半导体工业中最为常用的是有源可视蒸敷法(active visualvapour deposition)。该工艺是众所周知的，并且例如在美国专利5111355中进行了描述。从这份专利中可以看出钽是这类物质中的一种，即其氧化物可以形成于金属靶的表面上，并且可以从该靶上开始进行溅镀，这与那些其氧化物或者氮化物成形于射程中或者衬底表面上的其他反应工艺正好相反。可能是因为这个因素，所以会穿经镀敷层发生相对较高的泄漏电流问题。正如在美国专利5872696中所能够看到的那样，这种情况一部分是由针孔现象造成的，而一部分是由于存在有由所述层中未氧化钽原子连接起来所形成泄漏通道而造成的。在那篇专利中，泄漏电流的减小是通过对五氧化钽进行进一步氧化处理来实现的。这样就能够充分减少针孔和/或导电通路以形成较大面积的电容器。但是，面积较小的电容器会导致相对较高的泄漏电流(当将5伏电压施加于100埃厚的五氧化钽层上时大于10-6安的数量级)。
发明内容
本发明的要点在于提供一种在一支撑件上将绝缘物质镀敷到一半导体衬底上的方法，用以形成一电容器组件，该方法包括从一金属靶上将金属氧化物层反应溅镀到所述衬底上的步骤，其特征在于所述支撑件被偏压，用以随着金属氧化层的形成，穿过所镀敷的绝缘物质而感应出一直流电压。
所述感应电压可以在200至300伏的范围内，并且为了达到这个目的可以借助于一RF或者脉冲直流电源来对所述支撑件施加偏压。也可以利用一RF或者脉冲直流电源对所述靶施加偏压，最好是利用脉冲电源。
该方法还包括有在镀敷之后或者镀敷过程中对所镀敷的氧化物进行等离子氧化的步骤。
所述绝缘层可以镀敷在第一电极上，而离散的第二电极可以镀敷在该绝缘层的上表面上，用以形成多个电容器。各个第二电极的面积可以小于0.01平方厘米，而利用第二电极所形成的电容器的面积为0.008平方厘米。
在一优选实施例中，所述金属氧化物为五氧化钽，但是应该相信的是通过该方法将可以显示出对从靶上所反应溅镀出的任何金属氧化物进行改进的方法。
虽然在前面已经对本发明进行了说明，但是应该理解的是其包括任何由前面或者下文中所描述的技术特征所形成的创造性组合。
附图说明
本发明可以以多种方式进行实施，并且现在将通过参照附图的例子来对一特定实施例进行描述，其中所述附图是穿经一排根据本发明所形成的电容器的示意性剖面图。
具体实施方式
反应溅镀工艺是非常公知的技术，并且例如在1978年由AcademicPress，Inc.出版的、由John L.Vossen和Werner Kern共同编辑的“ThinFilm Processes”杂志第48至53页及第107至109页中进行了描述。在此通过参考而将其中所公开的内容结合入本发明。同样，也将已经提及的美国专利5872696中所公开的内容通过参考而结合入本发明，在该美国专利中详细描述了五氧化钽的反应气体阴极溅镀工艺。
正如在附图中所能够看到的那样，本申请将一第一电极10(一般由氮化钛制成)镀敷到一衬底11的表面上，并且通过在其上反应溅镀五氧化钽12来形成一绝缘层。随后通过穿经一孔眼掩模镀敷氮化钛圆点13来形成第二电极。随后，通过相应的圆点13、位于其下方的第一电极10部分，及由绝缘物质12所形成的中间部分形成一独立的电容器。
在本申请中用于进行反应镀敷工艺所装备的靶电极由脉冲直流电源供送能量。
随后利用下述工艺条件在相同(“数目相同”)的晶片上进行两次试验，其中在第一次试验中其上座放有所述衬底的支撑件没有被施加偏压，而在第二次试验中所述支撑件如下面所示那样被施加偏压：
试验结构：
负电极                        TiN
绝缘物质                      Ta2O5其厚度通常为100埃至1000埃，具有代表性的是500埃，在不同的应用领域也可能会需要1微米的厚度，下面报告的结果是在100埃的基础上进行的。总体来说，层厚越小越好。
正电极                        为了对所述绝缘物质进行测试，利用一孔眼掩模来镀敷一氮化钛层，以形成面积为0.008平方厘米的电容式圆点。
试验工艺：
通过反应镀敷来形成600埃厚的五氧化钽层
靶的电源                       2千瓦的直流电源，以1000千赫的频率进行脉冲，并且脉冲宽度为4000纳秒
氩气气流                       50sccm
氧气气流                       40sccm
工作台的温度                   300
工作台的偏压电源               600瓦，由13.65兆赫的射频(RF)，可以感应出270V的直流偏压
工艺时间                       150秒
晶体尺寸                       150毫米的硅晶体
对如前所述那样所镀敷的五氧化钽进行等离子氧化：
氧气气流                        200sccm
感应线圈的电压                  500瓦特，在400瓦特的功率下平稳启动，并随后增加1分钟的工艺时间
功率密度是一个十分重要的区别技术特征，对于不同尺寸的晶体和腔室来说，其他的功率级也许将是合适的并且可以根据经验加以确定。
在施加5伏电压的条件下对电容式圆点13进行探测，并且对泄漏电流进行测定。在没有对支撑件施加偏压条件下所形成的那一批电容器的泄漏电流大于10-6安培，而在施加偏压条件下所形成的那一批电容器的泄漏电流小于10-8安培。在所有情况下五氧化钽的厚度均为100埃。
应该指出的是在所有情况下均需要执行美国专利5872696中所述的氧化步骤，但是在施加偏压条件下的泄漏电流量明显改善。这就有力地表明在本发明申请中提供了一种完全不同的工艺，并且应该明白的是这将会使得镀敷层的密度得以改善。应该明白的是泄漏电流量值改善的程度就意味着本申请已经找到了一种明显改善该类型电容器性能的方法。

Claims (6)

1.一种在一支撑件上将绝缘物质镀敷到一半导体衬底表面的第一电极上用以形成一电容器组件的方法，该方法包括从一金属靶上将一金属氧化物层反应镀敷到所述衬底表面的第一电极上的步骤，其特征在于，向所述支撑件或金属靶施加偏压，用以随着金属氧化物层的形成，穿过所镀敷的金属氧化物层而感应出一直流电压，所感应出的电压在200至300伏之间，并且所述金属氧化物为五氧化钽。
2.如权利要求1所述的方法，其特征在于，借助于一RF或脉冲直流电源向所述支撑件施加偏压。
3.如权利要求1所述的方法，其特征在于，利用一RF或者脉冲直流电源向所述金属靶施加偏压。
4.如权利要求1所述的方法，还包括有在镀敷步骤之后或者镀敷过程中对所述氧化物进行等离子氧化的步骤。
5.如权利要求1所述的方法，其特征在于，由镀敷在第一电极上的绝缘物质与离散地镀敷在该绝缘物质上表面上的第二电极形成多个电容器。
6.如权利要求5所述的方法，其特征在于，各个第二电极的面积小于0.01平方厘米。
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US20010041460A1 (en) 2001-11-15
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