CN1214471C - 具有至少一只发光二极管作为光源的照明单元 - Google Patents

具有至少一只发光二极管作为光源的照明单元 Download PDF

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CN1214471C
CN1214471C CNB018135528A CN01813552A CN1214471C CN 1214471 C CN1214471 C CN 1214471C CN B018135528 A CNB018135528 A CN B018135528A CN 01813552 A CN01813552 A CN 01813552A CN 1214471 C CN1214471 C CN 1214471C
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fluorescent material
metal
share
lighting unit
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CN1444775A (zh
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D·波科尔
A·埃尔伦斯
G·胡伯
F·茨瓦施卡
F·耶尔曼
M·科布施
M·奥斯特塔
W·罗斯纳
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PATRA Patent Treuhand Munich
Ams Osram International GmbH
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Abstract

基于亮度转换LED的照明单元,发射的主辐射处于光谱370~430nm的范围内(峰值波长),其中该辐射借助在红、绿、蓝光内发射的三种荧光物质转换为具有更长波长的辐射。

Description

具有至少一只发光二极管作为光源的照明单元
技术领域
本发明涉及具有至少一只LED作为光源的照明装置。尤其是涉及基于主要发射近紫外或短波蓝光的LED的、发射可见光或白光的亮度变换LED。
背景技术
发射白光的LED眼下主要通过发射约460nm蓝光的Ga(In)N-LED和发射黄光的YAG:Ce3+荧光物质产生(US5 998 925和EP 862 794)。然而,由于基于有缺陷的色彩成分(首先是红色成分)而造成其不良的显色性,该白光LED只限制用于普通照明的目的。尝试以主要发射蓝光的LED与多种荧光物质组合来改善显色性以取代之,请参阅WO00/33389和WO 00/33390。
此外,原则上是众知的,发白光的LED也用所谓的有机LED实现,或通过单色LED与相应的色彩混合来联合地实现。至多应用一个UV LED(发射最大值在300~370nm),该UV LED借助多个荧光物质,至多3个,在红,绿,蓝光谱段内发射的(RGB-混合)转变为白光(WO 98 39805,WO 98 39 807和WO 97 48 138)。众知作为蓝成分的无机荧光物质BaMgAl10O17:Eu2+或ZnS:Ag+,作为蓝绿成分如ZnS:Cu+或(Zn,Cd)S:Cu+,或ZnS:(Al,Cu)+;作为红成分如Y2O2S:Eu2+。此外,推荐一系列有机荧光物质。
荧光灯或白炽灯很少适用于具有较小尺寸的较高品质发白光的光源或譬如LCD的背景照明。而OLED更好地适用于它,但与无机荧光物质比较,有机荧光物质的UV-稳定性差。此外,造价较高。带有荧光物质YAG:Ce3+(及其衍生的石榴石),蓝光LED原则上也适合于它,然而其缺点在于色品位置设置:只以较有限的方式这样选择色品位置,使得出现良好显色性的白光,因为白光色感主要通过LED的蓝光发射和荧光物质的黄光发射的混合产生。荧光灯和UV-(O)LED的缺点在于:UV能量以不佳的能效转变为可见光:(在荧光灯254和365nm,在UV LED300-370nm)波长例如254nm的UV辐射转变为具有波长450-650nm的光。这意味着,在理论上的100%量子效率情况下,能量耗损为40到60%。
通常有机荧光物质比无机荧光物质更难制造,此外,为了能在长寿命(例如超过30000小时)的光源内使用,通常是不稳定的。
本现有技术在由LED和荧光物质组合的能效和/或荧光物质的稳定性方面具有一些显著缺点,和/或几何尺寸方面的限制。
发明内容
本发明的任务在于提供根据技术领域部分所述的具有至少一只LED作为光源的照明单元,其特征在于高效性。
根据本发明的具有至少一只LED作为光源的照明单元,其中,LED发射光谱段的370到430nm段的主辐射,其中,该辐射局部地或完全地通过三种受到LED主辐射的荧光物质转换为长波辐射,并在蓝、绿和红光谱段内发射,以致产生白光,其特征为,至少借助于发射具有波长最大值在440到485nm的蓝光的荧光物质,借助于发射具有波长最大值在505到550nm的绿光的荧光物质,和借助于发射具有波长最大值在560到670nm的红光的荧光物质实现所述的转换,其中A)所述三种荧光物质中的至少一种来自下文表1、2和3之一,或B)共同使用以下三种荧光物质:ZnS:Ag作为蓝荧光物质,ZnS:(Cu,Al)作为绿荧光物质,以及ZnS:(Cu,Mn)作为红荧光物质。
本发明与研制发射可见光或白光的LED相结合是尤为有利的。该LED可以通过在近UV或极短波的蓝光(这里总称为“短波的”)中进行发射的具有发射波长在370和430nm之间的LED与至少一种在下面所引用的荧光物质组合起来以进行制造,该荧光物质完全地或局部地吸收LED的辐射,并且其自身在以下光谱段内发射,该光谱段与LED光和/或其它色素的附加混合会给出具有良好显色性的白光,或具有所希望的色品位置的光。按照应用,具有本发明特性的仅仅一种荧光物质已够用。它也可能与一种或多种其它的本发明的荧光物质或其它类的荧光物质,例如YAG:Ce组合。与利用长波蓝光(430到480nm)的现有技术相反,这里LED的蓝光不能(或几乎不能)直接利用,而只适合于荧光物质的初级激励。
其发射大多接近于荧光物质所发射的波长的主辐射源可以显著地提高能效。在400nm发射的源的情况下,能耗减少例如已经到达12~39%。
技术上的问题在于:发展和生产在370nm和430nm的光谱段可调整的,而且同时显示合适发射性能的足够有效的荧光物质。
为了实现彩色或白光LED,本发明的荧光物质可能与具有尽可能透明的粘结剂的一种或多种其它荧光物质组合(EP862 794)。荧光物质完全或局部吸收发射UV/蓝光的LED的光,并在另一光谱段再宽带地发射,所以以所希望的色品位置产生总发射。迄今为止,几乎还没有象这里所述的荧光物质那样好地满足这些要求的荧光物质。它表现出高量子效率(典型地为70%),同时表现出根据眼睛的灵敏度被认为是明亮的光谱发射。色品位置可以在宽波段内调整。此外,它们的相当容易的、保护环境的可制造性,它们的无毒性和相当高的化学稳定性属于这些荧光物质的优点。
本发明尤其涉及具有至少一只LED作为产生特定的所希望色调(例如绛红色)或例如白光的光源(发光二极管)的照明单元,它是通过借助于多种荧光物质把主要发射短波(即在光波段370到430nm的UV到蓝色)的辐射转换为白光:或者通过发射蓝或黄光的荧光物质的次级辐射的混合,或者尤其是通过发射红、绿、蓝光的三种荧光物质构成的RGB混合。对于显色性特别高的要求,也可以组合多于3种荧光物质。为此目的,也可以用本发明使用的荧光物质与其它的为此应用已经众知的荧光物质相组合,例如SrS:Eu(WO 00/33390)或YAG:Ce(US5 998 925)。
Ga(In,Al)N-LED尤其适合于主要发射短波的LED,但是为了产生具有光波段为370到430nm的主发射的短波LED,也可以采取任何其它的途径。
以超出眼下知识水平的方式,本发明利用了其它的荧光物质及其混合物(看表1到表3),由此扩展了LED的光谱发射特性。这时可以如此选择使用的荧光物质及其混合,使得除了不褪色的白光外,也产生具有宽带发射的其它混色。通常,LED的发射的光被包含荧光物质的混合物所吸收。该混合物或直接沉积在LED上,或者分散在树脂或硅中,或沉积到LED之上的透明玻璃片上,或者沉积到多个LED之上的透明玻璃片上。
本发明的步骤在于:通过利用具有发射波长在370和430nm之间的LED(不可见或几乎不可见的深蓝)和利用列在下面列出的荧光物质来改善LED发射的光谱匹配和调整任意的色标,确切地说,具有比传统的LED更高的能效。
可激发相对长波的无机发光材料,眼下几乎不为人知。然而,令人吃惊地表明,有一些无机发光材料还适合于利用峰值发射波长370-430nm的辐射被有效地激发。典型的发射半值宽度处于20nm~50nm。荧光物质的吸收可以通过选择的结构参量和化学成分加以控制。这样的荧光物质都具有相对小的禁带宽(典型值约3ev),或者它们对于那些吸收由LED发射的约400nm UV/蓝光的离子具有强的晶体场。
与所选择的LED(370~430nm)发光波长有关地,并且与所希望的显色性和/或所希望的色品位置有关地,可以在荧光物质混合中选择荧光物质的一定组合。因此,最合适的荧光物质混合是与所希望的目标(显色性,色品位置,色温)和当前的LED发射波长有关。
满足上述条件的每种荧光物质,原则上适合于应用。有效发射,并且在370~430nm范围内可有效激发或至少局部可激发的荧光物质列举在下表内。表1描绘了具有峰值发射波长从440到485nm的合适的蓝荧光物质,表2描述了具有峰值发射波长从505到550nm的合适的绿荧光物质,表3描绘了具有峰值发射波长从560到670nm的合适的红荧光物质。因此,首次制造基于激发多种荧光物质的发射短波的二极管的、具有较高效率的LED是可能的。
表1:发射蓝光的荧光物质
M5(PO4)3(X):Eu2+,其中M至少是单独的金属Ba,Ca之一或与Sr组合(优选Sr分额最高达85%),其中X至少是卤素F或Cl之一;
M*3MgSi2O8:Eu2+,其中M*至少是单独的金属Ba,Ca,Sr之一或组合,
Ba5SiO4Br6:Eu2+
Ba1.29Al12O19.29:Eu2+
YSiO2N:Ce3+
(Sr,Ba)2Al6O11:Eu2+
MF2:Eu2+,其中M至少是金属Ba,Sr,Ca之一;优先Ba在金属M中的份额>5%,例如Ba=10%,即M=Ba0.10Sr0.45Ca0.45
Ba0.57Eu0.09O0.34Al11.11O17:Eu2+
M**MgAl10O17:Eu2+,其中M**至少是单独的金属Eu,Sr之一,或与Ba组合(优选Ba份额最高75%);
MLn2S4:Ce3+,其M是金属Ca,Sr的组合,而Ln至少是金属La,Y,Gd之一。
表2:发射绿光(和青绿光)的荧光物质
SrAl2O4:Eu2+
MBO3:(Ce3+,Tb3+);其中M至少是单独的金属Sc,Gd,Lu之一,或与Y(尤其Y份额<40%)的组合;金属Ce和Tb一起作为激活剂起作用;尤其是Ce在金属M中的份额处于5%≤Ce≤20%的范围内,Tb在该金属中的份额处于4%≤Tb≤20;优选Ce份额>Tb份额;
M2SiO5:(Ce3+,Tb3+):其中M至少是金属Y,Gd,Lu之一,金属Ce和Tb一起作为激活剂(优选Ce的份额>Tb的份额),
MN*2S4:Ak:其中M至少是金属Zn,Mg,Ca,Sr,Ba之一;其中N至少是金属Al,Ga,In之一;Ak或与Eu2+,Mn2组合一起(优选Eu份额>Mn份额),或与Ce3+,Tb3+组合一起(优选Ce份额>Tb份额);
SrBaSiO4:Eu2+
Ba0.82Al12O18.82:Eu2+
Ba0.82Al12O18.82:Eu2+,Mn2+
Y5(SiO4)3N:Ce3+
Ca8Mg(SiO4)4Cl2:Ak2+其中Ak为单独的Eu2+或与Mn2组合一起(优选Eu份额>2×Mn份额);
Sr4Al14O25:Eu2+
(Ba,Sr)MgAl10O17:Ak,其中Ak是Eu2+或与Ce3+和Tb3+组合一起,或与Mn2+组合一起,优选在激活剂Ak内的Eu份额>50%;
Sr6BP5O20:Eu2+
Sr2P2O7:(Eu2+,Tb3+)与Eu和Tb组合一起
BaSi2O5:Eu2+
表3:发射红光(橙红到深红)的荧光物质
Ln2O2St:Ak3+,其中,Ln至少是单独的金属Gd,La,Lu之一或与Y组合(优选Y份额最高为40%;尤其是La份额最少为10%),St至少是元素S,Se,Te之一;Ak是单独的Eu或与Bi组合;
Ln2WmO6;Ak3+,其中,Ln至少是金属Y,Gd,La,Lu之一,Wm至少是元素W,Mo,Te之一,Ak是单独的Eu或与Bi组合;
(Zn,Cd)S:Ag+,其中Zn和Cd只被组合地使用,优选Zn份额<Cd份额;
Mg28Ge7.5O38F10:Mn4+
Sr2P2O7:Eu2+,Mn2+
M3MgSi2O8:Eu2+,Mn2+,其中,M至少是金属Ca,Ba,Sr之一。
(M1)2(M2)(BO3)2:Eu2+,其中M1至少是金属Ba,Sr之一,M2至少是金属Mg,Ca之一,优选在金属正离子M1中的Ba份额为80%,优选在金属M2中的Mg份额至少为70%。
必须注意,通常激活剂总是取代一部分占首位的正离子(=金属,尤其是镧),例如MS:Eu(5%)代表M1-0.05Eu0.05S。
式子“M是至少金属X,Y之一”意味着或单独的金属X或单独的金属Y,或者是两种金属的组合,即M=XaYb,其中a+b=1。
在白光LED的情况下使用类似于在本文开始的现有技术中所述的结构。作为UV二极管(主辐射源)优选用GaInN或GaN或GaInAlN。例如,它具有400nm峰值波长,20nm的半值宽度。该二极管衬底直接或间接淀积有由三种荧光物质组成的悬浮体,每种荧光物质具有在红、绿和蓝光谱段的发射最大值。从这些荧光物质中至少从表1到3选择一种,并且或与公知的荧光物质组合,或与另外的表中的荧光物质组合。该荧光物质混合体在约200℃的温度下烘烤。因此达到典型为80的显色性。
附图说明
本发明依靠多个实施例详细说明如下。其附图有:
图1示出用作白光光源(LED)的半导体结构元件;
图2示出根据本发明的具有荧光物质的照明单元;
图3到图17示出根据本发明的、具有各种荧光物质的LED的发射谱。
具体实施方式
为了在白光LED内与GaInN芯片一起投入使用,例如使用与US 5998 925所述类似的结构。用于白光的这类光源的结构在图1一目了然地示出。该光源是具有第1和第2电引线2、3的峰值发射波长为420nm和半值宽度为25nm的InGaN型半导体结构元件(芯片1),放入在不透光的主外壳8的空隙9内。引线之一3是经压焊丝14与芯片1连接。空隙具有用作芯片蓝光主辐射的反射器的壁17。该空隙9充填填料5,该填料作为主要成分包含环氧热塑合成树脂(80到90重量%)和荧光物质色素6(少于15重量%)。其它微量成分尚有甲醚和硅胶。荧光物质色素是混合物。第1转化荧光物质从表1选择。第2荧光物质从表2,第3荧光物质从表3分别选择。
在图2示出了平面灯20作为照明单元的一截面。它由其上粘合一只四方形外壳22的一个共同的支架21构成。它的上侧配有一个共同的盖板23。该四方形外壳具有一个空隙,其内安置单个半导体结构元件24。它们是具有峰值发射380nm的发射UV的发光二极管。借助于直接在单个LED的热塑合成树脂内(类似于图1所描述的)的变换层或安装在UV辐射可达到的所有平面上的层25来实现变换为白光。外壳侧壁、盖板和底部的内表面属于此。在利用从表1~3的本发明荧光物质中至少一种的条件下,变换层25由在黄、绿、蓝色光谱段发射的三种荧光物质构成。
组合所考察的荧光物质的一些具体实施例汇集在表4内。它涉及在所有三种光谱段内合适的、本发明的和众知的荧光物质的汇集。在第1列给出考察的序号。在第2列中给出荧光物质的化学式,在第3列给出荧光物质的发射最大值,在第4和第5列给出X和Y色标。在第6和第7列给出反射系数和量子效率(都用%表示)。
尤其优选ZnS荧光物质用于LED。它在LED环境内示出良好的加工性能。首先表4涉及发蓝光的荧光物质ZnS:Ag,发绿光的荧光物质ZnS:Cu,Al和发红光的荧光物质ZnS:Cu,Mn。必须强调,在通过用370到410nm光波段的主辐射LED激励的情况下,用这三种荧光物质可以制造发白光的荧光物质混合体,参阅图6的实施例6。因为这3种荧光物质化学上几乎是相同的材料,所以它们可以极好地在热塑合成树脂内或其它树脂内或在灌浆状态加工成荧光物质混合体。
表4
  化学式号     Em      x      y   R(%)   Q.E(%)
  1  Ba3MgSi2O8:Eu(5%)2  (Ba0.15Sr0.85)5(PO4)3Cl:Eu2+3  ZnS:Ag4  (Ba,Sr)MgAl10O17:Eu2+5  SrMgAl10O17:Eu2+6  EuMgAl10O177  ZnS:Cu8  Ba0.74Eu0.08Al12O18.829  Ca8Mg(SiO4)4Cl2:Eu2+10 ZnS:Cu11 BaMgAl10O17:Eu2+,Mn2+12 Ba0.72Eu0.05Mn0.05Al12O18.8213 BaMgAl10O17:Eu2+,Mn2+14 (Sr,Ba)SiO4:Eu2+15 SrAl2O4:Eu2+16 ZnS:Cu,Al17 YBO3:(Ce3+,Tb3+)(9.5%/5%)18 Ca8Mg(SiO4)4Cl2:Eu2+,Mn2+19 Sr1.95Ba0.03Eu0.02SiO420 Sr2P2O7:Eu2+,Mn2+21 ZnS:Cu,Mn22 Gd2MoO6:Eu3+(20%)23 Y2W0.98Mo0.02O6:Eu3+24 Y2WO6:Eu3+,Bi3+(7.5%,0.5%)25 Lu2WO6:Eu3+,Bi3+(7.5%,1%)26 SrS:Eu2+(2%)27 La2TeO6:Eu3+(%)28 (La,Y)2O2S:Eu3+(..)29 Sr2Si5N8:Eu2+(10%)30 (Ba,Ca,Sr)MgSi2O8:Eu,Mn     440448452454467481506507508510513514515517523534545550563570585610612612612616617626636657     0,160,150,140,150,150,170,190,220,170,20,140,210,140,230,290,310,340,380,440,320,490,660,610,640,640,630,660,670,640,39     0,070,050,070,080,190,310,430,430,60,460,210,480,650,610,580,610,590,570,530,270,450,340,380,360,360,370,340,330,360,16   424676496335225234166471395428298030216319506852655276841247     507663839263488767559597887783696146447391737052
第14号荧光物质(Sr,Ba)SiO4:Eu2+在绿光里如此宽带,以致在这里不需要单独的红光成分。
最后,在表6示出表4的荧光物质与具有发射峰值在光波段370到420nm的一个主光源(UV-LED)相结合的具体15个实施例。个别的UV二极管汇集在表5内,其中,给出了单个二极管的发射峰值和色品位置(就定义而论,从380nm起)。
为了更好地比较,在表6的列1到列4内再次插入表4的数据。在列5到10记录了单个荧光物质在各种波长情况下激励的可用性,也就是说系统地对于单个物质在具有发射峰值在370到420nm、间隔为10nm的短波二极管情况下的可用性。随后第15列示出了RGB混合的具体例子(称为Ex1到Ex15),就是说,短波LED(第2列给出选择的峰值发射)与由红、绿、蓝光谱段组成的荧光物质的组合。在各列内给出的数字表示光谱发射的相对份额。
在380nm以下的强短波UV二极管情况下,也由于通过三种荧光物质的强烈吸收,UV二极管几乎不提供次级发射的任何份额。
然而从380nm的主发射开始,除蓝荧光物质外,二极管对蓝荧光物质还提供微小的、随着波长上升而上升的额外的蓝光份额。这个份额在表5内作为附加的第4份额出现。
最后,在表6的最后2行记录了整个系统的、复盖了比色图表中较宽白色调波段的所测得的色标。该系统的光谱分布在图3(相应于EX1)到图7(相应于EX15)内描绘。
对发蓝光的第2,4和6号荧光物质;发绿光的第8,9,10,13,15,16,17,18号荧光物质以及发红光的荧光物质26,28和28,已经证明在370到420nm的主辐射的情况下,它们特别合适作为三色混合中应用的荧光物质。
第15号实施例利用了具有420nm峰值发射的、具有如此高强度的发蓝光二极管,以致它可以完全取代蓝荧光物质,并且只需要2个附加的绿和红光荧光物质。
表5
    号   Em    x     y
    UV1   370
    UV2   380   0,2   0,14
    UV3   390   0,19   0,09
    UV4   400   0,18   0,05
    UV5   410   0,18   0,03
    UV6   420   0,17   0,02
表6

Claims (18)

1.具有至少一只LED作为光源的照明单元,其中,LED发射光谱段的370到430nm段的主辐射,其中,该辐射局部地或完全地通过三种受到LED主辐射的荧光物质转换为长波辐射,并在蓝、绿和红光谱段内发射,以致产生白光,其特征为,至少借助于发射具有波长最大值在440到485nm的蓝光的荧光物质,借助于发射具有波长最大值在505到550nm的绿光的荧光物质,和借助于发射具有波长最大值在560到670nm的红光的荧光物质实现所述的转换,其中
A)所述三种荧光物质中的至少一种来自下列发射蓝光的荧光物质、发射绿光的荧光物质和发射红光的荧光物质之一:
1)发射蓝光的荧光物质:
M5(PO4)3(X):Eu2+,其中M至少是单独的金属Ba,Ca之一或与Sr组合,优选Sr分额最高达85%,其中X至少是卤素F或Cl之一;
M*3MgSi2O8:Eu2+,其中M*至少是单独的金属Ba,Ca,Sr之一或组合;
Ba5SiO4Br6:Eu2+
Ba1.29Al12O19.29:Eu2+
YSiO2N:Ce3+
(Sr,Ba)2Al6O11:Eu2+
MF2:Eu2+,其中M至少是金属Ba,Sr,Ca之一;优先Ba在金属M中的份额>5%,例如Ba=10%,即M=Ba0.10Sr0.45Ca0.45
Ba0.57Eu0.09O0.34Al11.11O17:Eu2+
M**MgAl10O17:Eu2+,其中M**至少是单独的金属Eu,Sr之一,或与Ba组合,优选Ba份额最高75%;
MLn2S4:Ce3+,其M是金属Ca,Sr的组合,而Ln至少是金属La,Y,Gd之一;
2)发射绿光的荧光物质:
SrAl2O4:Eu2+
MBO3:(Ce3+,Tb3+);其中M至少是单独的金属Sc,Gd,Lu之一,或与Y的组合,尤其Y份额<40%;金属Ce和Tb一起作为激活剂起作用;尤其是Ce在金属M中的份额处于5%≤Ce≤20%的范围内,Tb在该金属中的份额处于4%≤Tb≤20;优选Ce份额>Tb份额;
M2SiO5:(Ce3+,Tb3+):其中M至少是金属Y,Gd,Lu之一,金属Ce和Tb一起作为激活剂,优选Ce的份额>Tb的份额;
MN*2S4:Ak:其中M至少是金属Zn,Mg,Ca,Sr,Ba之一;其中N至少是金属Al,Ga,In之一;Ak或与Eu2+,Mn2组合一起,优选Eu份额>Mn份额,或与Ce3+,Tb3+组合一起,优选Ce份额>Tb份额;
SrBaSiO4:Eu2+
Ba0.82Al12O18.82:Eu2+
Ba0.82Al12O18.82:Eu2+,Mn2+
Y5(SiO4)3N:Ce3+
Ca8Mg(SiO4)4Cl2:Ak2+其中Ak为单独的Eu2+或与Mn2组合一起,优选Eu份额>2×Mn份额;
Sr4Al14O25:Eu2+
(Ba,Sr)MgAl10O17:Ak,其中Ak是Eu2+或与Ce3+和Tb3+组合一起,或与Mn2+组合一起,优选在激活剂Ak内的Eu份额>50%;
Sr6BP5O20:Eu2+
Sr2P2O7:(Eu2+,Tb3+)与Eu和Tb组合一起;
BaSi2O5:Eu2+
3)发射红光的荧光物质:
Ln2O2St:Ak3+,其中,Ln至少是单独的金属Gd,La,Lu之一或与Y组合,优选Y份额最高为40%;尤其是La份额最少为10%,St至少是元素S,Se,Te之一,Ak是单独的Eu或与Bi组合;
Ln2WmO6;Ak3+,其中,Ln至少是金属Y,Gd,La,Lu之一,Wm至少是元素W,Mo,Te之一,Ak是单独的Eu或与Bi组合;
(Zn,Cd)S:Ag+,其中Zn和Cd只被组合地使用,优选Zn份额<Cd份额;
Mg28Ge7.5O38F10:Mn4+
Sr2P2O7:Eu2+,Mn2+
M3MgSi2O8:Eu2+,Mn2+,其中,M至少是金属Ca,Ba,Sr之一;
(M1)2(M2)(BO3)2:Eu2+,其中M1至少是金属Ba,Sr之一,M2至少是金属Mg,Ca之一,优选在金属正离子M1中的Ba份额为80%,优选在金属M2中的Mg份额至少为70%;
或者
B)共同使用以下三种荧光物质:ZnS:Ag作为蓝荧光物质,ZnS:(Cu,Al)作为绿荧光物质,以及ZnS:(Cu,Mn)作为红荧光物质。
2.根据权利要求1所述的照明单元,其特征为,在应用分别来自所述发射蓝光的荧光物质、发射绿光的荧光物质和发射红光的荧光物质的三种荧光物质的情况下,LED发射白光辐射。
3.根据权利要求1所述的照明单元,其特征为,应用基于GaN,GaInN,GaAlN,GaInAlN的LED作为主辐射源。
4.根据权利要求1所述的照明单元,其特征为,在应用如下蓝荧光物质的情况下产生白光:
M15(PO4)3(X):Eu2+,其中,M至少是单独的金属Ba,Ca之一或与Sr组合,其中X是至少卤素F或Cl之一;
或一种发蓝光的荧光物质M1*3MgSi2O8:Eu2+,其中,M1*至少是单独的金属Ba,Cu,Sr之一或组合;
或一种蓝光荧光物质ZnS:Ag;或M1**MgAl10O17:Eu2+,其中,M1**至少是单独的金属Eu,Sr之一或与Ba的组合。
5.根据权利要求1所述的照明单元,其特征为,在应用如下一种绿荧光物质情况下产生白光:SrAl2O4:Eu2+
或一种绿荧光物质:Ba0.82Al12O18.82:Eu2+,Mn2+
或一种绿荧光物质:Ca8Mg(SiO4)4Cl2:Eu2+,Mn2+
或一种绿荧光物质:Sr4Al14O25:Eu
或一种绿荧光物质:ZnS:Cu,Al,或
BaMgAl10O17:AT,其中AT为Eu2+与Ce3+,Tb3+组合,或与Mn2+组合。
6.根据权利要求1所述的照明单元,其特征为,在应用如下一种红荧光物质情况下产生白光:
Ln2O2SSt1:Ak13+,其中,Ln至少是单独的金属Gd,La,Lu之一或与Y组合;其中St1至少是元素Se,Te之一;其中Ak1为单独的Eu或与Bi组合;
或一种红荧光物质,ZnS:Cu,Mn或
Sr2P2O7:Ak2+,其中Ak至少为金属Eu,Mn之一。
7.根据权利要求1所述的照明单元,其特征为,为了产生白光,主发射的辐射处于波长范围370到420nm,应用了蓝荧光物质M25(PO4)3(X):Eu2+,其中M2至少为单独的金属Ba,Ca之一或与Sr组合,其中X为至少卤素F或Cl之一;或一种荧光物质
M2**MgAl10O17:Eu2+,其中M2**为至少单独的金属Eu,Sr之一或与Ba组合。
8.根据权利要求1所述的照明单元,其特征为,为了产生白光,主发射的辐射处于波长在380nm以下,应用了如下一种蓝荧光物质:M2*3MgSi2O8:Eu2+,其中M2*至少是单独的金属Ba,Ca,Sr之一或其组合。
9.根据权利要求1所述的照明单元,其特征为,为了产生白光,主发射的辐射处于波长范围在370到420nm之间,应用如下一种绿荧光物质:SrAl2O4:Eu2+
或一种绿荧光物质Ca8Mg(SiO4)4Cl2:Eu2+,Mn2+
或一种绿荧光物质Sr4Al14O25:Eu2+
或一种绿荧光物质BaMgAl10O17:AT,其中AT为Eu2+与Ce3+,Tb3+组合,或与Mn3+组合。
10.根据权利要求1所述的照明单元,其特征为,为了产生白光,主发射的辐射处于波长范围在390nm之下,应用了如下一种绿荧光物质Ba0.82Al12O18.82:(Eu2+,Mn2+)。
11.根据权利要求1所述的照明单元,其特征为,为了产生白光,主发射的辐射处于波长范围在380nm之下,应用了如下一种红荧光物质Ln2O2St2:Ak23+,其中Ln至少是单独的金属Gd,La,Lu之一或与Y组合,其中St2至少是元素S,Se,Te之一;其中Ak2是单独的Eu或与Bi组合;
或一种红荧光物质Sr2P2O7:Ak2+,其中Ak至少是金属Eu,Mn之一。
12.根据权利要求1所述的照明单元,其特征为,为了产生白光,主发射的辐射处于波长范围在370到400nm,应用了如下一种红荧光物质:(M4)3MgSi2O8:Eu2+,Mn2+,其中M4至少是金属Ba,Ca,Sr之一。
13.根据权利要求1所述的照明单元,其特征为,照明单元是亮度转换LED,其中,荧光物质与芯片直接或间接接触。
14.根据权利要求1所述的照明单元,其特征为,发光单元是LED场。
15.根据权利要求9所述的照明单元,其特征为,至少一种荧光物质安置在LED场前安置的光学装置上。
16.根据权利要求1所述的照明单元,其特征为,为了产生白光,在应用蓝荧光物质ZnS:Ag的情况下,主发射的辐射处于波长范围370到410nm。
17.根据权利要求1所述的照明单元,其特征为,为了产生白光,在应用绿荧光物质ZnS:Cu,Al情况下,其中Cu和Al一起应用,主发射的辐射处于波长范围370到410nm。
18.根据权利要求1所述的照明单元,其特征为,为了产生白光,在应用红荧光物质ZnS:Cu,Mn,其中Cu和Mn一起应用,主发射的辐射处于波长范围370到410nm。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105385445A (zh) * 2015-10-30 2016-03-09 北京航空航天大学 一种在钨酸钇基中共掺杂离子获得白色发光荧光粉的方法

Families Citing this family (190)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE29724848U1 (de) 1996-06-26 2004-09-30 Osram Opto Semiconductors Gmbh Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US6680569B2 (en) * 1999-02-18 2004-01-20 Lumileds Lighting U.S. Llc Red-deficiency compensating phosphor light emitting device
AT410266B (de) 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
JP4125878B2 (ja) * 2001-08-27 2008-07-30 東芝電子エンジニアリング株式会社 発光装置
EP1367655A4 (en) 2001-09-03 2009-05-06 Panasonic Corp SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING APPARATUS, AND METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING DEVICE
FR2830529B1 (fr) * 2001-10-10 2004-10-08 Rhodia Elect & Catalysis Nouveaux tungstates de terres rares, leur procede de preparation et leur utilisation comme agent de protection contre les rayons ultraviolets
JP4168776B2 (ja) * 2002-02-15 2008-10-22 三菱化学株式会社 発光装置及びそれを用いた照明装置
EP2204859A3 (en) * 2002-02-15 2010-10-27 Mitsubishi Chemical Corporation Light emitting device and illuminator using the same
JP3702863B2 (ja) * 2002-05-15 2005-10-05 住友電気工業株式会社 白色発光素子
US6809471B2 (en) * 2002-06-28 2004-10-26 General Electric Company Phosphors containing oxides of alkaline-earth and Group-IIIB metals and light sources incorporating the same
JP3997124B2 (ja) * 2002-08-26 2007-10-24 株式会社リコー 画像読取装置の照明装置
US7800121B2 (en) * 2002-08-30 2010-09-21 Lumination Llc Light emitting diode component
US7224000B2 (en) 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
FR2846663B1 (fr) * 2002-11-05 2006-08-11 Rhodia Elect & Catalysis Materiau transformant la lumiere, notamment pour parois de serres, comprenant comme additif un silicate de baryum et de magnesium
DE10259946A1 (de) * 2002-12-20 2004-07-15 Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. Leuchtstoffe zur Konversion der ultravioletten oder blauen Emission eines lichtemittierenden Elementes in sichtbare weiße Strahlung mit sehr hoher Farbwiedergabe
DE10260692B4 (de) * 2002-12-23 2009-05-20 Continental Automotive Gmbh Flüssigkristallanzeige
KR100499079B1 (ko) 2003-02-10 2005-07-01 엘지전자 주식회사 녹색 산화물 형광체
JP2004296830A (ja) * 2003-03-27 2004-10-21 Solidlite Corp 白色ledの製造方法
US20040227199A1 (en) * 2003-05-15 2004-11-18 Toshiba Kikai Kabushiki Kaisha Minute flow passage and micro-chemical chip including the same
DE10326755A1 (de) * 2003-06-13 2006-01-26 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Entladungslampe mit Zweibanden-Leuchtstoff
JP5456233B2 (ja) * 2003-06-24 2014-03-26 ジーイー ライティング ソリューションズ エルエルシー Ledチップによる白色光発生のためのフルスペクトル蛍光体混合物
US7075225B2 (en) 2003-06-27 2006-07-11 Tajul Arosh Baroky White light emitting device
US7462983B2 (en) * 2003-06-27 2008-12-09 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. White light emitting device
US7484860B2 (en) * 2003-07-02 2009-02-03 S.C. Johnson & Son, Inc. Combination white light and colored LED light device with active ingredient emission
US7520635B2 (en) * 2003-07-02 2009-04-21 S.C. Johnson & Son, Inc. Structures for color changing light devices
US6987353B2 (en) * 2003-08-02 2006-01-17 Phosphortech Corporation Light emitting device having sulfoselenide fluorescent phosphor
US7026755B2 (en) * 2003-08-07 2006-04-11 General Electric Company Deep red phosphor for general illumination applications
US7675075B2 (en) 2003-08-28 2010-03-09 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
JP4378242B2 (ja) * 2003-09-25 2009-12-02 株式会社小糸製作所 車両用灯具
US7488432B2 (en) 2003-10-28 2009-02-10 Nichia Corporation Fluorescent material and light-emitting device
JP4568894B2 (ja) 2003-11-28 2010-10-27 Dowaエレクトロニクス株式会社 複合導体および超電導機器システム
US7608200B2 (en) * 2004-01-16 2009-10-27 Mitsubishi Chemical Corporation Phosphor and including the same, light emitting apparatus, illuminating apparatus and image display
JP4617889B2 (ja) * 2004-01-16 2011-01-26 三菱化学株式会社 蛍光体、及びそれを用いた発光装置、照明装置、ならびに画像表示装置
JP4617890B2 (ja) * 2004-01-16 2011-01-26 三菱化学株式会社 蛍光体、及びそれを用いた発光装置、照明装置、ならびに画像表示装置
KR100807209B1 (ko) * 2004-02-18 2008-03-03 쇼와 덴코 가부시키가이샤 형광체, 그 제조방법 및 그 형광체를 사용한 발광장치
JP4511849B2 (ja) 2004-02-27 2010-07-28 Dowaエレクトロニクス株式会社 蛍光体およびその製造方法、光源、並びにled
JP2005286312A (ja) * 2004-03-02 2005-10-13 Fujikura Ltd 発光デバイス及び照明装置
US7573072B2 (en) * 2004-03-10 2009-08-11 Lumination Llc Phosphor and blends thereof for use in LEDs
FR2869159B1 (fr) * 2004-04-16 2006-06-16 Rhodia Chimie Sa Diode electroluminescente emettant une lumiere blanche
KR100777501B1 (ko) * 2004-04-27 2007-11-28 마쯔시다덴기산교 가부시키가이샤 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을이용한 발광 장치
KR100655894B1 (ko) 2004-05-06 2006-12-08 서울옵토디바이스주식회사 색온도 및 연색성이 우수한 파장변환 발광장치
KR100658700B1 (ko) * 2004-05-13 2006-12-15 서울옵토디바이스주식회사 Rgb 발광소자와 형광체를 조합한 발광장치
JP4524468B2 (ja) 2004-05-14 2010-08-18 Dowaエレクトロニクス株式会社 蛍光体とその製造方法および当該蛍光体を用いた光源並びにled
CN100411200C (zh) * 2004-05-18 2008-08-13 光宝科技股份有限公司 白光发光装置
JP4491585B2 (ja) 2004-05-28 2010-06-30 Dowaエレクトロニクス株式会社 金属ペーストの製造方法
KR100665299B1 (ko) 2004-06-10 2007-01-04 서울반도체 주식회사 발광물질
KR100665298B1 (ko) 2004-06-10 2007-01-04 서울반도체 주식회사 발광장치
US8308980B2 (en) 2004-06-10 2012-11-13 Seoul Semiconductor Co., Ltd. Light emitting device
JP4414821B2 (ja) * 2004-06-25 2010-02-10 Dowaエレクトロニクス株式会社 蛍光体並びに光源およびled
KR101209488B1 (ko) * 2004-07-06 2012-12-07 라이트스케이프 머티어리얼스, 인코포레이티드 효율적인, 녹색 발광 인광체 및 적색 발광 인광체와의 조합
JP4511885B2 (ja) 2004-07-09 2010-07-28 Dowaエレクトロニクス株式会社 蛍光体及びled並びに光源
JP4546176B2 (ja) * 2004-07-16 2010-09-15 京セラ株式会社 発光装置
US7476337B2 (en) 2004-07-28 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source
US7138756B2 (en) 2004-08-02 2006-11-21 Dowa Mining Co., Ltd. Phosphor for electron beam excitation and color display device using the same
JP4933739B2 (ja) 2004-08-02 2012-05-16 Dowaホールディングス株式会社 電子線励起用の蛍光体および蛍光体膜、並びにそれらを用いたカラー表示装置
US7575697B2 (en) * 2004-08-04 2009-08-18 Intematix Corporation Silicate-based green phosphors
US20060049414A1 (en) * 2004-08-19 2006-03-09 Chandran Ramachandran G Novel oxynitride phosphors
JP4524470B2 (ja) 2004-08-20 2010-08-18 Dowaエレクトロニクス株式会社 蛍光体およびその製造方法、並びに当該蛍光体を用いた光源
JP4543250B2 (ja) 2004-08-27 2010-09-15 Dowaエレクトロニクス株式会社 蛍光体混合物および発光装置
US7476338B2 (en) 2004-08-27 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source
JP4674348B2 (ja) * 2004-09-22 2011-04-20 独立行政法人物質・材料研究機構 蛍光体とその製造方法および発光器具
TWI256149B (en) * 2004-09-27 2006-06-01 Advanced Optoelectronic Tech Light apparatus having adjustable color light and manufacturing method thereof
DE102004060358A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Lumineszenzdiodenchips und Lumineszenzdiodenchip
JP4543253B2 (ja) 2004-10-28 2010-09-15 Dowaエレクトロニクス株式会社 蛍光体混合物および発光装置
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US7648649B2 (en) * 2005-02-02 2010-01-19 Lumination Llc Red line emitting phosphors for use in led applications
JP4892193B2 (ja) 2005-03-01 2012-03-07 Dowaホールディングス株式会社 蛍光体混合物および発光装置
US7439668B2 (en) * 2005-03-01 2008-10-21 Lumination Llc Oxynitride phosphors for use in lighting applications having improved color quality
US7524437B2 (en) 2005-03-04 2009-04-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
US7276183B2 (en) * 2005-03-25 2007-10-02 Sarnoff Corporation Metal silicate-silica-based polymorphous phosphors and lighting devices
US7445730B2 (en) 2005-03-31 2008-11-04 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
US7443094B2 (en) 2005-03-31 2008-10-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
JP4905627B2 (ja) * 2005-04-25 2012-03-28 株式会社東芝 緑色蛍光体、白色ledおよびそれを用いたバックライト並びに液晶表示装置
DE102005019376A1 (de) 2005-04-26 2006-11-02 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Lumineszenzkonversions-LED
KR100780186B1 (ko) * 2005-04-27 2007-11-27 삼성전기주식회사 발광다이오드를 이용한 lcd 백라이트 유니트
JP5057692B2 (ja) * 2005-04-27 2012-10-24 サムソン エルイーディー カンパニーリミテッド. 発光ダイオードを利用したバックライトユニット
JP4975269B2 (ja) 2005-04-28 2012-07-11 Dowaホールディングス株式会社 蛍光体およびその製造方法、並びに当該蛍光体を用いた発光装置
DE102005031336B4 (de) 2005-05-13 2008-01-31 Osram Opto Semiconductors Gmbh Projektionseinrichtung
JP2007049114A (ja) * 2005-05-30 2007-02-22 Sharp Corp 発光装置とその製造方法
JP4794235B2 (ja) * 2005-08-02 2011-10-19 シャープ株式会社 発光装置
DE102005040558A1 (de) 2005-08-26 2007-03-01 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Lumineszenzdiodenchips und Lumineszenzdiodenchip
US7501753B2 (en) * 2005-08-31 2009-03-10 Lumination Llc Phosphor and blends thereof for use in LEDs
US20070052342A1 (en) * 2005-09-01 2007-03-08 Sharp Kabushiki Kaisha Light-emitting device
JP4965840B2 (ja) * 2005-09-29 2012-07-04 株式会社東芝 白色発光型ledランプの製造方法およびそれを用いたバックライトの製造方法並びに液晶表示装置の製造方法
US7935975B2 (en) 2005-09-29 2011-05-03 Kabushiki Kaisha Toshiba White LED lamp and backlight using the same, and liquid crystal display device using the backlight
DE102005059524A1 (de) 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Gehäuse für ein elektromagnetische Strahlung emittierendes optoelektronisches Bauelement, Bauelement und Verfahren zum Herstellen eines Gehäuses oder eines Bauelements
DE102006004397A1 (de) 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102005052356A1 (de) 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Beleuchtungseinheit mit Lumineszenzdiodenchip und Lichtleiter, Verfahren zum Herstellen einer Beleuchtungseinheit und LCD-Display
US20070125984A1 (en) * 2005-12-01 2007-06-07 Sarnoff Corporation Phosphors protected against moisture and LED lighting devices
US8906262B2 (en) * 2005-12-02 2014-12-09 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
KR101055772B1 (ko) 2005-12-15 2011-08-11 서울반도체 주식회사 발광장치
KR20080106402A (ko) 2006-01-05 2008-12-05 일루미텍스, 인크. Led로부터 광을 유도하기 위한 개별 광학 디바이스
JP2007231250A (ja) 2006-02-02 2007-09-13 Nichia Chem Ind Ltd 蛍光体及びそれを用いた発光装置
US20100164365A1 (en) * 2006-02-10 2010-07-01 Mitsubishi Chemical Corporation Phosphor, method for producing same, phosphor-containing composition, light-emitting device, image display, and illuminating device
JP5032043B2 (ja) 2006-03-27 2012-09-26 豊田合成株式会社 フェラスメタルアルカリ土類金属ケイ酸塩混合結晶蛍光体およびこれを用いた発光装置
KR100875443B1 (ko) 2006-03-31 2008-12-23 서울반도체 주식회사 발광 장치
DE102006015117A1 (de) 2006-03-31 2007-10-04 Osram Opto Semiconductors Gmbh Optoelektronischer Scheinwerfer, Verfahren zum Herstellen eines optoelektronischen Scheinwerfers und Lumineszenzdiodenchip
US20070267960A1 (en) * 2006-05-18 2007-11-22 Osram Sylvania Inc. Phosphor Blend and Lamp Containing Same
US8282986B2 (en) * 2006-05-18 2012-10-09 Osram Sylvania, Inc. Method of applying phosphor coatings
US7952110B2 (en) * 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
DE102006029203B9 (de) 2006-06-26 2023-06-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Lichtemittierende Vorrichtung
JP2008028042A (ja) * 2006-07-19 2008-02-07 Toshiba Corp 発光装置
KR101303179B1 (ko) * 2006-07-21 2013-09-09 삼성전자주식회사 백색 발광소자용 형광체 및 이를 포함한 백색 발광 소자
KR101258227B1 (ko) 2006-08-29 2013-04-25 서울반도체 주식회사 발광 소자
US7842960B2 (en) * 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
DE102007020782A1 (de) * 2006-09-27 2008-04-03 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
WO2008042351A2 (en) 2006-10-02 2008-04-10 Illumitex, Inc. Led system and method
US7713442B2 (en) 2006-10-03 2010-05-11 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
JP5367218B2 (ja) 2006-11-24 2013-12-11 シャープ株式会社 蛍光体の製造方法および発光装置の製造方法
WO2008065567A1 (en) * 2006-11-27 2008-06-05 Philips Intellectual Property & Standards Gmbh Illumination system comprising hetero- polyoxometalate
JP2007123927A (ja) * 2006-12-18 2007-05-17 Mitsubishi Cable Ind Ltd 発光装置およびそれを用いた照明装置
JP4228012B2 (ja) 2006-12-20 2009-02-25 Necライティング株式会社 赤色発光窒化物蛍光体およびそれを用いた白色発光素子
DE102007018837A1 (de) 2007-03-26 2008-10-02 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Lumineszenzdiodenchips und Lumineszenzdiodenchip
DE102007015474A1 (de) 2007-03-30 2008-10-02 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102007016228A1 (de) 2007-04-04 2008-10-09 Litec Lll Gmbh Verfahren zur Herstellung von Leuchtstoffen basierend auf Orthosilikaten für pcLEDs
DE102007016229A1 (de) 2007-04-04 2008-10-09 Litec Lll Gmbh Verfahren zur Herstellung von Leuchtstoffen basierend auf Orthosilikaten für pcLEDs
EP2135001A1 (de) * 2007-04-16 2009-12-23 Goodrich Lighting Systems GmbH Farbverstellbare led-leuchte, insbesondere zur fahrzeuginnenbeleuchtung
GB0707420D0 (en) * 2007-04-18 2007-05-23 Bank Of England Copy-protected documents
JP5360857B2 (ja) * 2007-05-17 2013-12-04 Necライティング株式会社 緑色発光蛍光体、その製造方法及びそれを用いた発光素子
RU2467051C2 (ru) 2007-08-22 2012-11-20 Сеул Семикондактор Ко., Лтд. Люминофоры на основе нестехиометрических тетрагональных силикатов меди и щелочноземельного металла и способ их получения
KR101055769B1 (ko) 2007-08-28 2011-08-11 서울반도체 주식회사 비화학양론적 정방정계 알칼리 토류 실리케이트 형광체를채택한 발광 장치
DE102007042642A1 (de) 2007-09-07 2009-03-12 Osram Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
US8137586B2 (en) * 2007-09-14 2012-03-20 Osram Sylvania Inc. Phosphor blend for a compact fluorescent lamp and lamp containing same
DE102007044597A1 (de) 2007-09-19 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102007050876A1 (de) 2007-09-26 2009-04-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102007054800A1 (de) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Lumineszenzkonversionsvorrichtung und Verfahren zum Herstellen von Lumineszenzdiodenchips mit einer derartigen Vorrichtung
US8018139B2 (en) 2007-11-05 2011-09-13 Enertron, Inc. Light source and method of controlling light spectrum of an LED light engine
DE102008029191A1 (de) * 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung zur Hinterleuchtung eines Displays sowie ein Display mit einer solchen Beleuchtungseinrichtung
EP2240968A1 (en) 2008-02-08 2010-10-20 Illumitex, Inc. System and method for emitter layer shaping
US20100327306A1 (en) * 2008-02-11 2010-12-30 Koninklijke Philips Electronics N.V. Led based light source for improved color saturation
US8651723B2 (en) * 2008-02-21 2014-02-18 Koninklijke Philips N.V. LED light source with a luminescent layer
JP2009245981A (ja) * 2008-03-28 2009-10-22 Toyota Central R&D Labs Inc Led発光装置
TW201008374A (en) 2008-06-26 2010-02-16 Du Pont Organic light-emitting diode luminaires
JP2010090231A (ja) * 2008-10-07 2010-04-22 Canon Inc 画像表示装置
DE102009010468A1 (de) 2008-11-13 2010-05-20 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Funktionsmaterial mit darauf angeordneten Lichtkonversionsstoff-Partikeln, Verfahren zu dessen Herstellung und optoelektronisches Bauelement, enthaltend ein derartiges Funktionsmaterial
US20100133987A1 (en) * 2008-12-02 2010-06-03 Industrial Technology Research Institute Phosphor and white light illumiantion device utilizing the same
US8358059B2 (en) 2008-12-02 2013-01-22 Industrial Technology Research Institute Phosphor, white light illumination device and solar cell utilizing the same
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
JP2009071337A (ja) * 2008-12-29 2009-04-02 Mitsubishi Chemicals Corp 発光装置およびそれを用いた照明装置
CN101769506B (zh) * 2009-01-05 2011-08-24 王伟立 一种制作纯白光二极管光源的方法
DE102009030205A1 (de) 2009-06-24 2010-12-30 Litec-Lp Gmbh Leuchtstoffe mit Eu(II)-dotierten silikatischen Luminophore
KR101055762B1 (ko) 2009-09-01 2011-08-11 서울반도체 주식회사 옥시오소실리케이트 발광체를 갖는 발광 물질을 채택한 발광 장치
JP2011029497A (ja) * 2009-07-28 2011-02-10 Mitsubishi Chemicals Corp 白色発光装置およびそれを用いた照明装置
US8592829B2 (en) * 2009-08-17 2013-11-26 Osram Sylvania Inc. Phosphor blend for an LED light source and LED light source incorporating same
EP2467448B1 (en) 2009-08-17 2016-03-23 Osram Sylvania Inc. Phosphor blend for an led light source and led light source incorporating same
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
TW201121117A (en) 2009-08-24 2011-06-16 Du Pont Organic light-emitting diode luminaires
EP2471122A4 (en) 2009-08-24 2013-11-06 Du Pont ORGANIC LIGHT EMITTING DIODE LUMINAIRES
DE102010024758A1 (de) 2009-09-30 2011-03-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Optikkörpers, Optikkörper und optoelektronisches Bauteil mit dem Optikkörper
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
US8674343B2 (en) * 2009-10-29 2014-03-18 E I Du Pont De Nemours And Company Organic light-emitting diodes having white light emission
US8716700B2 (en) 2009-10-29 2014-05-06 E I Du Pont De Nemours And Company Organic light-emitting diodes having white light emission
TWI406928B (zh) 2010-03-18 2013-09-01 Ind Tech Res Inst 藍光螢光材料、白光發光裝置、及太陽能電池
WO2011117791A1 (en) 2010-03-24 2011-09-29 Koninklijke Philips Electronics N.V. Led-based lighting device comprising a plurality of luminescent materials
CN102212368B (zh) * 2010-04-02 2014-05-07 财团法人工业技术研究院 蓝光荧光材料和使用该材料的白光发光装置及太阳能电池
DE102010031237A1 (de) 2010-07-12 2012-01-12 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
CN102376860A (zh) 2010-08-05 2012-03-14 夏普株式会社 发光装置及其制造方法
DE102010050832A1 (de) 2010-11-09 2012-05-10 Osram Opto Semiconductors Gmbh Lumineszenzkonversionselement, Verfahren zu dessen Herstellung und optoelektronisches Bauteil mit Lumineszenzkonversionselement
US20150188002A1 (en) * 2010-11-11 2015-07-02 Auterra, Inc. Light emitting devices having rare earth and transition metal activated phosphors and applications thereof
DE102010054280A1 (de) 2010-12-13 2012-06-14 Osram Opto Semiconductors Gmbh Verfahren zum Erzeugen einer Lumineszenzkonversionsstoffschicht, Zusammensetzung hierfür und Bauelement umfassend eine solche Lumineszenzkonversionsstoffschicht
TW201226530A (en) * 2010-12-20 2012-07-01 Univ Nat Chiao Tung Yellow phosphor having oxyapatite structure, preparation method and white light-emitting diode thereof
WO2012124302A1 (ja) 2011-03-16 2012-09-20 株式会社 東芝 発光装置用蛍光体とその製造方法、及びそれを用いた発光装置
WO2013035610A1 (ja) * 2011-09-05 2013-03-14 シャープ株式会社 照明装置及びそれを用いた表示装置、テレビ受信装置
WO2013144927A1 (en) * 2012-03-30 2013-10-03 Koninklijke Philips N.V. Optical cavity including a light emitting device and wavelength converting material
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
JP2015530740A (ja) * 2012-08-10 2015-10-15 コーニンクレッカ フィリップス エヌ ヴェ 燐光体変換発光ダイオード、ランプ、及び照明体
ITUD20120164A1 (it) 2012-09-26 2014-03-27 Martini Spa Sorgente luminosa a luce piacevole
DE102012109104B4 (de) * 2012-09-26 2021-09-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Beleuchtungseinrichtung, Hinterleuchtung für ein Display oder einen Fernseher und Display oder Fernseher
DE102012111123A1 (de) 2012-09-26 2014-03-27 Osram Opto Semiconductors Gmbh Licht emittierendes Halbleiterbauelement
TWI483902B (zh) * 2013-04-03 2015-05-11 國立臺灣大學 製作參雜金屬離子之硫化鋅奈米粒子的方法以及應用其進行光致發暖白光的方法
ITUD20130104A1 (it) * 2013-08-08 2015-02-09 Martini Spa Sorgente luminosa a luce piacevole
JP6428089B2 (ja) * 2014-09-24 2018-11-28 日亜化学工業株式会社 発光装置
KR102423748B1 (ko) * 2015-07-08 2022-07-22 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광장치
CN105062479B (zh) * 2015-08-15 2018-07-06 中国地质大学(北京) 一种黄橙光型钙硅石结构的氮氧化物荧光材料及其制备方法
WO2017121833A1 (en) 2016-01-14 2017-07-20 Basf Se Perylene bisimides with rigid 2,2'-biphenoxy bridges
CN109803969B (zh) 2016-10-06 2022-08-05 巴斯夫欧洲公司 2-苯基苯氧基取代的苝双酰亚胺化合物及其用途
SG11201908185RA (en) 2017-03-08 2019-10-30 Merck Patent Gmbh Luminophore mixtures for use in dynamic lighting systems
KR102373817B1 (ko) * 2017-05-02 2022-03-14 삼성전자주식회사 백색 발광장치 및 조명 장치
DE102017130136A1 (de) 2017-12-15 2019-06-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP7297756B2 (ja) 2017-12-19 2023-06-26 ビーエーエスエフ ソシエタス・ヨーロピア シアノアリール置換ベンゾ(チオ)キサンテン化合物
KR20200132946A (ko) 2018-03-20 2020-11-25 바스프 에스이 황색 광 방출 장치
CN110546772A (zh) * 2018-03-27 2019-12-06 首尔半导体株式会社 发光装置
KR102567653B1 (ko) * 2018-06-11 2023-08-17 삼성디스플레이 주식회사 백라이트 유닛 및 이를 포함하는 표시 장치
EP3844821A1 (en) * 2018-08-31 2021-07-07 Lumileds LLC Phosphor converted led with high color quality
CN113531411B (zh) * 2020-04-21 2023-10-10 厦门立达信数字教育科技有限公司 一种光源结构和灯具
KR102379178B1 (ko) * 2021-10-02 2022-03-25 주식회사 에스에스라이트 블루 라이트 차단 및 가시광 살균 기능을 포함한 고연색 백색 발광 소자

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3418247A (en) * 1965-03-24 1968-12-24 Rca Corp Rare earth activated lanthanum and lutetium oxy-chalcogenide phosphors
US3505240A (en) * 1966-12-30 1970-04-07 Sylvania Electric Prod Phosphors and their preparation
US3544481A (en) 1967-12-01 1970-12-01 Sylvania Electric Prod Europium-activated alkaline earth orthosilicate phosphor
GB8623822D0 (en) * 1986-10-03 1986-11-05 Philips Nv Colour cathode ray tube
JP2601341B2 (ja) * 1989-03-01 1997-04-16 日亜化学工業株式会社 高演色性の蛍光ランプ
DE69424981T2 (de) * 1993-10-20 2001-01-11 Agfa Gevaert Nv Hochauflösendes radiographisches Aufzeichnungselement
US5604763A (en) * 1994-04-20 1997-02-18 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor laser diode and method for producing same
DE69508719T2 (de) * 1994-12-19 1999-08-19 Toshiba Kk Verfahren zur Herstellung eines Anzeigeschirmes
US5640792A (en) * 1995-06-07 1997-06-24 National Service Industries, Inc. Lighting fixtures
KR100189807B1 (ko) * 1995-09-26 1999-06-01 손욱 발광효율이 향상된 적색 발광 형광체의 제조방법
EP0856202A2 (en) 1996-06-11 1998-08-05 Koninklijke Philips Electronics N.V. Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
JPH1041546A (ja) * 1996-07-22 1998-02-13 Nippon Sanso Kk 発光素子
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
US5851063A (en) * 1996-10-28 1998-12-22 General Electric Company Light-emitting diode white light source
KR19980046311A (ko) * 1996-12-12 1998-09-15 손욱 형광막 프로젝터
US6051925A (en) 1997-03-03 2000-04-18 U.S. Philips Corporation Diode-addressed color display with molecular phosphor
WO1998039805A1 (de) * 1997-03-03 1998-09-11 Koninklijke Philips Electronics N.V. Weisse lumineszenzdiode
WO1998039807A1 (de) 1997-03-04 1998-09-11 Koninklijke Philips Electronics N.V. Diodenadressiertes farbdisplay mit lanthanoidphosphoren
JPH11199867A (ja) * 1997-03-13 1999-07-27 Matsushita Electric Ind Co Ltd 蛍光体とこれを用いた蛍光体含有物ならびにこれらの製造方法
JP3475702B2 (ja) * 1997-03-14 2003-12-08 日亜化学工業株式会社 アルカリ土類ハロ燐酸塩蛍光体及びそれを用いた高負荷蛍光ランプ
ES2230623T3 (es) * 1997-03-26 2005-05-01 Zhiguo Xiao Material luminiscente de silicato con postluminiscencia de larga duracion y procedimiento de fabricacion del mismo.
US5813753A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
JPH11145519A (ja) * 1997-09-02 1999-05-28 Toshiba Corp 半導体発光素子、半導体発光装置および画像表示装置
JPH11140437A (ja) * 1997-11-06 1999-05-25 Matsushita Electric Ind Co Ltd 二価ユーロピウム付活蛍光体の製造方法
DE19803936A1 (de) 1998-01-30 1999-08-05 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Ausdehnungskompensiertes optoelektronisches Halbleiter-Bauelement, insbesondere UV-emittierende Leuchtdiode und Verfahren zu seiner Herstellung
US6252254B1 (en) 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US6294800B1 (en) * 1998-02-06 2001-09-25 General Electric Company Phosphors for white light generation from UV emitting diodes
US6255670B1 (en) * 1998-02-06 2001-07-03 General Electric Company Phosphors for light generation from light emitting semiconductors
US6099754A (en) * 1998-03-31 2000-08-08 Sarnoff Corporation Long persistence red phosphors
JP3471220B2 (ja) * 1998-05-27 2003-12-02 株式会社東芝 半導体発光装置
JP2000081683A (ja) * 1998-06-23 2000-03-21 Konica Corp 無機蛍光体を含有するハロゲン化銀写真感光材料及びカラ―フィルタ―
TW503424B (en) * 1998-06-25 2002-09-21 Matsushita Electric Ind Co Ltd A PDP manufacturing method and an aging process performed on a PDP
JP4171107B2 (ja) * 1998-07-09 2008-10-22 スタンレー電気株式会社 面状光源
AU5198299A (en) * 1998-08-18 2000-03-14 Nichia Corporation Red light-emitting afterglow photoluminescence phosphor and afterglow lamp usingthe phosphor
JP3949290B2 (ja) * 1998-08-31 2007-07-25 株式会社東芝 表示装置
KR100702273B1 (ko) * 1998-09-28 2007-03-30 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 조명 시스템
US6299338B1 (en) * 1998-11-30 2001-10-09 General Electric Company Decorative lighting apparatus with light source and luminescent material
US6429583B1 (en) * 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
JP2000178552A (ja) * 1998-12-14 2000-06-27 Toray Ind Inc ディスプレイ用蛍光体粉末および蛍光体ペースト
JP2000195672A (ja) * 1998-12-25 2000-07-14 Sony Corp 画像表示装置
US6576156B1 (en) * 1999-08-25 2003-06-10 The United States Of America As Represented By The Secretary Of The Navy Phosphors with nanoscale grain sizes and methods for preparing the same
JP2001111109A (ja) * 1999-10-07 2001-04-20 Sharp Corp 窒化ガリウム系化合物半導体発光素子
DE60004945T2 (de) * 1999-11-05 2004-07-15 Kabushiki Kaisha Toshiba, Kawasaki Methode und Geräte für Farb-Radiographie, und Farb-Lichtemissionsfolie dafür
JP4197814B2 (ja) * 1999-11-12 2008-12-17 シャープ株式会社 Led駆動方法およびled装置と表示装置
TW465123B (en) * 2000-02-02 2001-11-21 Ind Tech Res Inst High power white light LED
US6621211B1 (en) * 2000-05-15 2003-09-16 General Electric Company White light emitting phosphor blends for LED devices
JP4077170B2 (ja) * 2000-09-21 2008-04-16 シャープ株式会社 半導体発光装置
JP2004127988A (ja) * 2002-09-30 2004-04-22 Toyoda Gosei Co Ltd 白色発光装置
US6982045B2 (en) * 2003-05-17 2006-01-03 Phosphortech Corporation Light emitting device having silicate fluorescent phosphor
JP4415578B2 (ja) * 2003-06-30 2010-02-17 パナソニック株式会社 プラズマディスプレイ装置
KR100777501B1 (ko) * 2004-04-27 2007-11-28 마쯔시다덴기산교 가부시키가이샤 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을이용한 발광 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105385445A (zh) * 2015-10-30 2016-03-09 北京航空航天大学 一种在钨酸钇基中共掺杂离子获得白色发光荧光粉的方法

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EP1970970A3 (de) 2008-10-01
CN1444775A (zh) 2003-09-24
JP2012235140A (ja) 2012-11-29
EP1305833A1 (de) 2003-05-02
TW531904B (en) 2003-05-11
JP2004505470A (ja) 2004-02-19
US20060055315A1 (en) 2006-03-16
EP1970970A2 (de) 2008-09-17
US7821196B2 (en) 2010-10-26
KR20030017644A (ko) 2003-03-03
JP5419315B2 (ja) 2014-02-19
US7064480B2 (en) 2006-06-20
US7239082B2 (en) 2007-07-03
KR100920533B1 (ko) 2009-10-08
WO2002011214A1 (de) 2002-02-07
US20070170842A1 (en) 2007-07-26
US20040056256A1 (en) 2004-03-25

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