CN1235695A - 阴极电弧源和石墨靶 - Google Patents
阴极电弧源和石墨靶 Download PDFInfo
- Publication number
- CN1235695A CN1235695A CN97198178A CN97198178A CN1235695A CN 1235695 A CN1235695 A CN 1235695A CN 97198178 A CN97198178 A CN 97198178A CN 97198178 A CN97198178 A CN 97198178A CN 1235695 A CN1235695 A CN 1235695A
- Authority
- CN
- China
- Prior art keywords
- target
- magnetic field
- field
- source
- graphite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32614—Consumable cathodes for arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9615548.6 | 1996-07-24 | ||
GBGB9615548.6A GB9615548D0 (en) | 1996-07-24 | 1996-07-24 | Cathode arc source and graphite target |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1235695A true CN1235695A (zh) | 1999-11-17 |
CN1132219C CN1132219C (zh) | 2003-12-24 |
Family
ID=10797435
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN97198178A Expired - Lifetime CN1132219C (zh) | 1996-07-24 | 1997-07-24 | 阴极电弧源和起弧的方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6761805B1 (zh) |
EP (2) | EP0914670B1 (zh) |
JP (1) | JP2000514950A (zh) |
CN (1) | CN1132219C (zh) |
AT (1) | ATE232013T1 (zh) |
AU (1) | AU3630397A (zh) |
DE (1) | DE69718794D1 (zh) |
GB (1) | GB9615548D0 (zh) |
WO (1) | WO1998003988A2 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100451160C (zh) * | 2006-12-19 | 2009-01-14 | 哈尔滨工业大学 | 一种含有掺杂剂元素的石墨靶材的制备方法 |
CN101494151A (zh) * | 2009-03-05 | 2009-07-29 | 苏州晶能科技有限公司 | 高效率的一维线性等离子体清洗磁控阴极装置 |
CN102348828A (zh) * | 2009-04-28 | 2012-02-08 | 株式会社神户制钢所 | 电弧式蒸发源和使用它的皮膜的制造方法 |
CN107541705A (zh) * | 2016-06-24 | 2018-01-05 | 威科仪器有限公司 | 供电弧等离子体沉积用的增强式阴极电弧源 |
CN111690899A (zh) * | 2019-03-15 | 2020-09-22 | 纳峰真空镀膜(上海)有限公司 | 改进的阴极弧源设备 |
CN113365402A (zh) * | 2020-03-06 | 2021-09-07 | 上海宏澎能源科技有限公司 | 限制等离子束的装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9722650D0 (en) * | 1997-10-24 | 1997-12-24 | Univ Nanyang | Cathode ARC source with target feeding apparatus |
US6903511B2 (en) * | 2003-05-06 | 2005-06-07 | Zond, Inc. | Generation of uniformly-distributed plasma |
JP4373252B2 (ja) * | 2004-03-16 | 2009-11-25 | 浩史 滝川 | プラズマ生成装置 |
US20060177610A1 (en) * | 2005-02-09 | 2006-08-10 | Arrow International Limited | Sealing of Plastic Containers |
US7498587B2 (en) * | 2006-05-01 | 2009-03-03 | Vapor Technologies, Inc. | Bi-directional filtered arc plasma source |
CN101346030B (zh) * | 2008-08-25 | 2011-09-14 | 哈尔滨工业大学 | 可控多元阴极弧等离子体形成装置及方法 |
DE102008057020A1 (de) | 2008-11-12 | 2010-05-20 | Oerlikon Trading Ag, Trübbach | Zündvorrichtung für Arc Quellen |
US20100190036A1 (en) * | 2009-01-27 | 2010-07-29 | Kyriakos Komvopoulos | Systems and Methods for Surface Modification by Filtered Cathodic Vacuum Arc |
JP5868017B2 (ja) * | 2010-04-14 | 2016-02-24 | キヤノン株式会社 | 光学素子成形用型の製造方法および光学素子成形用型 |
JP5903818B2 (ja) * | 2011-09-26 | 2016-04-13 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
IL281747B1 (en) * | 2021-03-22 | 2023-12-01 | N T Tao Ltd | System and method for creating plasma with high efficiency |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3517092A (en) * | 1968-04-15 | 1970-06-23 | Atomic Energy Commission | Process for preparing high-density isotropic graphite structures |
EP0174977A4 (en) * | 1984-03-02 | 1987-02-12 | Univ Minnesota | METHOD AND DEVICE FOR THE CONTROLLED APPLICATION OF MATERIAL BY ARC ARC IN A VACUUM. |
US5298136A (en) * | 1987-08-18 | 1994-03-29 | Regents Of The University Of Minnesota | Steered arc coating with thick targets |
US5336520A (en) * | 1990-06-18 | 1994-08-09 | The United States Of America As Represented By The United States Department Of Energy | High density-high purity graphite prepared by hot isostatic pressing in refractory metal containers |
JPH04124265A (ja) * | 1990-09-12 | 1992-04-24 | Anelva Corp | スパッタリング装置および膜作製方法 |
JPH04236770A (ja) * | 1991-01-17 | 1992-08-25 | Kobe Steel Ltd | 真空アーク蒸着のアークスポットの制御方法及び蒸発源 |
CA2065581C (en) * | 1991-04-22 | 2002-03-12 | Andal Corp. | Plasma enhancement apparatus and method for physical vapor deposition |
US5279723A (en) * | 1992-07-30 | 1994-01-18 | As Represented By The United States Department Of Energy | Filtered cathodic arc source |
KR100271244B1 (ko) * | 1993-09-07 | 2000-11-01 | 히가시 데쓰로 | 전자빔 여기식 플라즈마장치 |
US5468363A (en) * | 1994-04-25 | 1995-11-21 | Regents Of The University Of California | Magnetic-cusp, cathodic-arc source |
KR100230279B1 (ko) * | 1997-03-31 | 1999-11-15 | 윤종용 | 음극 아크 방전을 이용한 박막 증착장치 |
GB9722649D0 (en) * | 1997-10-24 | 1997-12-24 | Univ Nanyang | Cathode ARC source for metallic and dielectric coatings |
US6103074A (en) * | 1998-02-14 | 2000-08-15 | Phygen, Inc. | Cathode arc vapor deposition method and apparatus |
-
1996
- 1996-07-24 GB GBGB9615548.6A patent/GB9615548D0/en active Pending
-
1997
- 1997-07-24 EP EP97932940A patent/EP0914670B1/en not_active Expired - Lifetime
- 1997-07-24 AU AU36303/97A patent/AU3630397A/en not_active Abandoned
- 1997-07-24 AT AT97932940T patent/ATE232013T1/de not_active IP Right Cessation
- 1997-07-24 CN CN97198178A patent/CN1132219C/zh not_active Expired - Lifetime
- 1997-07-24 WO PCT/GB1997/001992 patent/WO1998003988A2/en active IP Right Grant
- 1997-07-24 EP EP02019845A patent/EP1267384A3/en not_active Withdrawn
- 1997-07-24 JP JP10506712A patent/JP2000514950A/ja not_active Ceased
- 1997-07-24 DE DE69718794T patent/DE69718794D1/de not_active Expired - Lifetime
-
1999
- 1999-01-25 US US09/236,113 patent/US6761805B1/en not_active Expired - Lifetime
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100451160C (zh) * | 2006-12-19 | 2009-01-14 | 哈尔滨工业大学 | 一种含有掺杂剂元素的石墨靶材的制备方法 |
CN101494151A (zh) * | 2009-03-05 | 2009-07-29 | 苏州晶能科技有限公司 | 高效率的一维线性等离子体清洗磁控阴极装置 |
CN101494151B (zh) * | 2009-03-05 | 2013-11-13 | 苏州晶能科技有限公司 | 高效率的一维线性等离子体清洗磁控阴极装置 |
CN102348828A (zh) * | 2009-04-28 | 2012-02-08 | 株式会社神户制钢所 | 电弧式蒸发源和使用它的皮膜的制造方法 |
CN107541705A (zh) * | 2016-06-24 | 2018-01-05 | 威科仪器有限公司 | 供电弧等离子体沉积用的增强式阴极电弧源 |
CN107541705B (zh) * | 2016-06-24 | 2020-12-04 | 威科仪器有限公司 | 供电弧等离子体沉积用的增强式阴极电弧源 |
US11466360B2 (en) | 2016-06-24 | 2022-10-11 | Veeco Instruments Inc. | Enhanced cathodic ARC source for ARC plasma deposition |
CN111690899A (zh) * | 2019-03-15 | 2020-09-22 | 纳峰真空镀膜(上海)有限公司 | 改进的阴极弧源设备 |
CN111690899B (zh) * | 2019-03-15 | 2023-11-17 | 纳峰真空镀膜(上海)有限公司 | 改进的阴极弧源设备 |
CN113365402A (zh) * | 2020-03-06 | 2021-09-07 | 上海宏澎能源科技有限公司 | 限制等离子束的装置 |
CN113365402B (zh) * | 2020-03-06 | 2023-04-07 | 上海宏澎能源科技有限公司 | 限制等离子束的装置 |
Also Published As
Publication number | Publication date |
---|---|
GB9615548D0 (en) | 1996-09-04 |
DE69718794D1 (de) | 2003-03-06 |
JP2000514950A (ja) | 2000-11-07 |
CN1132219C (zh) | 2003-12-24 |
AU3630397A (en) | 1998-02-10 |
EP0914670B1 (en) | 2003-01-29 |
ATE232013T1 (de) | 2003-02-15 |
EP1267384A2 (en) | 2002-12-18 |
EP0914670A2 (en) | 1999-05-12 |
US6761805B1 (en) | 2004-07-13 |
WO1998003988A2 (en) | 1998-01-29 |
EP1267384A3 (en) | 2006-07-19 |
WO1998003988A3 (en) | 1998-03-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NANYANG TECHNOLOGICAL UNIVERSITY Free format text: FORMER OWNER: TECHNOLOGY BUSINESS ACCELERATOR PTE LTD Effective date: 20080905 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: TECHNOLOGY BUSINESS ACCELERATOR PTE LTD Free format text: FORMER NAME OR ADDRESS: PHELPS VACUUM TECHNOLOGY PTE LTD |
|
CP03 | Change of name, title or address |
Address after: Xin Jiapo Patentee after: Tech business accelerator Pte. Ltd. Address before: Xin Jiapo Patentee before: Filplas Vacuum Technology Pte. Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20080905 Address after: Singapore Singapore Patentee after: NANYANG TECHNOLOGICAL University Address before: Xin Jiapo Patentee before: Tech business accelerator Pte. Ltd. |
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CX01 | Expiry of patent term |
Granted publication date: 20031224 |
|
CX01 | Expiry of patent term |