CN1244033A - 铜基材料表层的机械化学抛光方法 - Google Patents
铜基材料表层的机械化学抛光方法 Download PDFInfo
- Publication number
- CN1244033A CN1244033A CN99111902A CN99111902A CN1244033A CN 1244033 A CN1244033 A CN 1244033A CN 99111902 A CN99111902 A CN 99111902A CN 99111902 A CN99111902 A CN 99111902A CN 1244033 A CN1244033 A CN 1244033A
- Authority
- CN
- China
- Prior art keywords
- copper
- colloidal silica
- silica particles
- based material
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 239000010949 copper Substances 0.000 title claims abstract description 66
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 65
- 238000005498 polishing Methods 0.000 title claims abstract description 63
- 239000000463 material Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000002245 particle Substances 0.000 claims abstract description 46
- 239000000203 mixture Substances 0.000 claims abstract description 29
- 239000008119 colloidal silica Substances 0.000 claims abstract description 27
- 239000000126 substance Substances 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- 239000002002 slurry Substances 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 239000000725 suspension Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910017758 Cu-Si Inorganic materials 0.000 claims description 3
- 229910017770 Cu—Ag Inorganic materials 0.000 claims description 3
- 229910017767 Cu—Al Inorganic materials 0.000 claims description 3
- 229910017931 Cu—Si Inorganic materials 0.000 claims description 3
- 229910002796 Si–Al Inorganic materials 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000007900 aqueous suspension Substances 0.000 abstract description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 6
- 238000005299 abrasion Methods 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 150000007524 organic acids Chemical class 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical group CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- -1 Cu-Si Chemical compound 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000004111 Potassium silicate Substances 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000001996 bearing alloy Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 150000004699 copper complex Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9809873A FR2781922B1 (fr) | 1998-07-31 | 1998-07-31 | Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre |
FR9809873 | 1999-07-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1244033A true CN1244033A (zh) | 2000-02-09 |
CN1129960C CN1129960C (zh) | 2003-12-03 |
Family
ID=9529285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN99111902A Expired - Lifetime CN1129960C (zh) | 1998-07-31 | 1999-07-30 | 铜基材料表层的机械化学抛光方法 |
Country Status (13)
Country | Link |
---|---|
US (1) | US6302765B1 (zh) |
EP (1) | EP0982766B1 (zh) |
JP (1) | JP2000114213A (zh) |
KR (1) | KR100596644B1 (zh) |
CN (1) | CN1129960C (zh) |
AT (1) | ATE408897T1 (zh) |
DE (1) | DE69939569D1 (zh) |
DK (1) | DK0982766T3 (zh) |
ES (1) | ES2313763T3 (zh) |
FR (1) | FR2781922B1 (zh) |
MY (1) | MY118930A (zh) |
SG (1) | SG78371A1 (zh) |
TW (1) | TW431947B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010012159A1 (zh) * | 2008-08-01 | 2010-02-04 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
CN102803574A (zh) * | 2010-03-23 | 2012-11-28 | Jx日矿日石金属株式会社 | 电子材料用铜合金及其制备方法 |
CN105051883A (zh) * | 2013-03-15 | 2015-11-11 | 密克罗奇普技术公司 | 在集成电路中形成栅栏导体 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2781922B1 (fr) * | 1998-07-31 | 2001-11-23 | Clariant France Sa | Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre |
MY118582A (en) * | 2000-05-12 | 2004-12-31 | Kao Corp | Polishing composition |
JP2001347450A (ja) * | 2000-06-08 | 2001-12-18 | Promos Technologies Inc | 化学機械研磨装置 |
US6737728B1 (en) * | 2000-10-12 | 2004-05-18 | Intel Corporation | On-chip decoupling capacitor and method of making same |
EP1236765A1 (de) | 2001-02-28 | 2002-09-04 | hanse chemie GmbH | Siliciumdioxiddispersion |
KR100444307B1 (ko) * | 2001-12-28 | 2004-08-16 | 주식회사 하이닉스반도체 | 반도체소자의 금속배선 콘택플러그 형성방법 |
DE10208166B4 (de) * | 2002-02-26 | 2006-12-14 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung von Metallleitungen mit verbesserter Gleichförmigkeit auf einem Substrat |
KR100672940B1 (ko) * | 2004-08-03 | 2007-01-24 | 삼성전자주식회사 | 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법 |
KR100641348B1 (ko) | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
US20080148652A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Compositions for chemical mechanical planarization of copper |
JP5403922B2 (ja) | 2008-02-26 | 2014-01-29 | 富士フイルム株式会社 | 研磨液および研磨方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE677806C (de) * | 1937-06-16 | 1939-07-03 | Ernst Hoch | Selbstverkaeufer |
US3972712A (en) * | 1974-05-29 | 1976-08-03 | Brush Wellman, Inc. | Copper base alloys |
FR2558827B1 (fr) | 1984-01-27 | 1986-06-27 | Azote & Prod Chim | Procede de fabrication de nitromethane et installation |
US5226930A (en) * | 1988-06-03 | 1993-07-13 | Monsanto Japan, Ltd. | Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same |
US5352277A (en) * | 1988-12-12 | 1994-10-04 | E. I. Du Pont De Nemours & Company | Final polishing composition |
US5262354A (en) * | 1992-02-26 | 1993-11-16 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
FR2689876B1 (fr) * | 1992-04-08 | 1994-09-02 | Hoechst France | Dispersions silico-acryliques, leur procédé d'obtention, leur application en stéréophotolithographie et procédé de préparation d'objets en résine. |
US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
BE1007281A3 (nl) * | 1993-07-12 | 1995-05-09 | Philips Electronics Nv | Werkwijze voor het polijsten van een oppervlak van koper of een in hoofdzaak koper bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze, röntgenstralingcollimerend element en röntgenstralingreflecterend element, beide voorzien van een volgens de werkwijze gepolijst oppervlak en polijstmiddel geschikt voor toepassing in de werkwijze. |
JP3098661B2 (ja) * | 1993-07-28 | 2000-10-16 | キヤノン株式会社 | 研磨剤組成物及びそれを用いる研磨方法 |
US5575885A (en) * | 1993-12-14 | 1996-11-19 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing semiconductor device |
US5525191A (en) * | 1994-07-25 | 1996-06-11 | Motorola, Inc. | Process for polishing a semiconductor substrate |
US5695384A (en) * | 1994-12-07 | 1997-12-09 | Texas Instruments Incorporated | Chemical-mechanical polishing salt slurry |
US5614444A (en) * | 1995-06-06 | 1997-03-25 | Sematech, Inc. | Method of using additives with silica-based slurries to enhance selectivity in metal CMP |
US6046110A (en) * | 1995-06-08 | 2000-04-04 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing a semiconductor device |
KR970042941A (ko) * | 1995-12-29 | 1997-07-26 | 베일리 웨인 피 | 기계적 화학적 폴리싱 공정을 위한 폴리싱 합성물 |
US5769689A (en) * | 1996-02-28 | 1998-06-23 | Rodel, Inc. | Compositions and methods for polishing silica, silicates, and silicon nitride |
KR19980019046A (ko) * | 1996-08-29 | 1998-06-05 | 고사이 아키오 | 연마용 조성물 및 이의 용도(Abrasive composition and use of the same) |
US6039891A (en) * | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
FR2754937B1 (fr) * | 1996-10-23 | 1999-01-15 | Hoechst France | Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium |
SG54606A1 (en) * | 1996-12-05 | 1998-11-16 | Fujimi Inc | Polishing composition |
US6309560B1 (en) * | 1996-12-09 | 2001-10-30 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US5993685A (en) * | 1997-04-02 | 1999-11-30 | Advanced Technology Materials | Planarization composition for removing metal films |
FR2761629B1 (fr) | 1997-04-07 | 1999-06-18 | Hoechst France | Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope |
US5891205A (en) * | 1997-08-14 | 1999-04-06 | Ekc Technology, Inc. | Chemical mechanical polishing composition |
US5897375A (en) * | 1997-10-20 | 1999-04-27 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture |
FR2772777B1 (fr) | 1997-12-23 | 2000-03-10 | Clariant Chimie Sa | Compositions silico-acryliques, procede de preparation et application pour l'obtention de revetements durcissables thermiquement ou par rayonnement |
FR2781922B1 (fr) * | 1998-07-31 | 2001-11-23 | Clariant France Sa | Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre |
-
1998
- 1998-07-31 FR FR9809873A patent/FR2781922B1/fr not_active Expired - Lifetime
-
1999
- 1999-07-05 SG SG1999003206A patent/SG78371A1/en unknown
- 1999-07-10 MY MYPI99002917A patent/MY118930A/en unknown
- 1999-07-22 EP EP99114392A patent/EP0982766B1/en not_active Expired - Lifetime
- 1999-07-22 DK DK99114392T patent/DK0982766T3/da active
- 1999-07-22 ES ES99114392T patent/ES2313763T3/es not_active Expired - Lifetime
- 1999-07-22 DE DE69939569T patent/DE69939569D1/de not_active Expired - Lifetime
- 1999-07-22 AT AT99114392T patent/ATE408897T1/de active
- 1999-07-27 JP JP21159799A patent/JP2000114213A/ja active Pending
- 1999-07-28 TW TW088112766A patent/TW431947B/zh not_active IP Right Cessation
- 1999-07-30 CN CN99111902A patent/CN1129960C/zh not_active Expired - Lifetime
- 1999-07-30 KR KR1019990031197A patent/KR100596644B1/ko not_active IP Right Cessation
- 1999-08-02 US US09/365,176 patent/US6302765B1/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010012159A1 (zh) * | 2008-08-01 | 2010-02-04 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
CN102803574A (zh) * | 2010-03-23 | 2012-11-28 | Jx日矿日石金属株式会社 | 电子材料用铜合金及其制备方法 |
CN102803574B (zh) * | 2010-03-23 | 2015-09-02 | Jx日矿日石金属株式会社 | 电子材料用铜合金及其制备方法 |
CN105051883A (zh) * | 2013-03-15 | 2015-11-11 | 密克罗奇普技术公司 | 在集成电路中形成栅栏导体 |
Also Published As
Publication number | Publication date |
---|---|
EP0982766A1 (en) | 2000-03-01 |
ATE408897T1 (de) | 2008-10-15 |
MY118930A (en) | 2005-02-28 |
JP2000114213A (ja) | 2000-04-21 |
SG78371A1 (en) | 2001-02-20 |
EP0982766B1 (en) | 2008-09-17 |
CN1129960C (zh) | 2003-12-03 |
KR100596644B1 (ko) | 2006-07-06 |
KR20000012088A (ko) | 2000-02-25 |
ES2313763T3 (es) | 2009-03-01 |
DE69939569D1 (de) | 2008-10-30 |
DK0982766T3 (da) | 2008-11-17 |
FR2781922B1 (fr) | 2001-11-23 |
TW431947B (en) | 2001-05-01 |
US6302765B1 (en) | 2001-10-16 |
FR2781922A1 (fr) | 2000-02-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1129960C (zh) | 铜基材料表层的机械化学抛光方法 | |
CN1167109C (zh) | 铝或铝合金导电材料层的机械化学抛光方法 | |
CN1072699C (zh) | 抛光剂 | |
CN1753962A (zh) | 可调控的去除阻隔物的抛光浆料 | |
US6861010B2 (en) | Copper-based metal polishing composition, method for manufacturing a semiconductor device, polishing composition, aluminum-based metal polishing composition, and tungsten-based metal polishing composition | |
KR101064643B1 (ko) | 연마용 조성물 및 연마방법, 그리고 그 제조방법 | |
CN1292460C (zh) | 用于化学机械抛光的浆料、抛光方法及半导体器件的制造方法 | |
CN1343751A (zh) | 抛光剂组合物 | |
CN1238812A (zh) | 用于化学机械抛光的多氧化剂浆料 | |
JP2006324639A (ja) | 研磨スラリーおよびウエハ再生方法 | |
CN1766027A (zh) | 用于制造改进的氧化铈研磨颗粒及包括这种颗粒的组合物的方法 | |
CN1837319A (zh) | 抛光用组合物及其抛光方法 | |
CN1660951A (zh) | 抛光组合物和抛光方法 | |
CN1428388A (zh) | 金属和金属/电介质结构的化学机械抛光用组合物 | |
US20100207057A1 (en) | Polishing composition | |
CN1590487A (zh) | 降低半导体晶片磨蚀的化学机械磨平组合物 | |
CN1670117A (zh) | 抛光组合物及抛光方法 | |
KR20080111149A (ko) | 구리 함유 기판에 대한 cmp 방법 | |
WO2007048316A1 (fr) | Pate d'abrasion chimique-mecanique pour couche barriere au tantale | |
CN104449396A (zh) | 低缺陷化学机械抛光组合物 | |
US9676966B2 (en) | Chemical mechanical polishing composition and process | |
JP3849091B2 (ja) | 化学機械研磨用水系分散体 | |
CN1357585A (zh) | 用于金属和电介质结构化学机械抛光的抛光膏 | |
US6652612B2 (en) | Silica particles for polishing and a polishing agent | |
US20020146965A1 (en) | Method and composition for polishing by CMP |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: AZ ELECTRON MATERIAL USA CO., LTD. Free format text: FORMER OWNER: CLARIANT (FRANCE) S. A. Effective date: 20050311 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20050311 Address after: American New Jersey Patentee after: AZ Electronic Materials USA Address before: Cape France Patentee before: Clariant (France) S. A. |
|
ASS | Succession or assignment of patent right |
Owner name: MERCK PATENT GMBH Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS USA CO. Effective date: 20150409 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150409 Address after: Darmstadt Patentee after: Merck Patent GmbH Address before: American New Jersey Patentee before: AZ Electronic Materials USA |
|
CX01 | Expiry of patent term |
Granted publication date: 20031203 |
|
CX01 | Expiry of patent term |