CN1290162C - 抛光剂及基片的抛光方法 - Google Patents
抛光剂及基片的抛光方法 Download PDFInfo
- Publication number
- CN1290162C CN1290162C CNB028003535A CN02800353A CN1290162C CN 1290162 C CN1290162 C CN 1290162C CN B028003535 A CNB028003535 A CN B028003535A CN 02800353 A CN02800353 A CN 02800353A CN 1290162 C CN1290162 C CN 1290162C
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- CN
- China
- Prior art keywords
- polishing
- polishing agent
- acid
- record
- particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/10—Solid density
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
Abstract
Description
Claims (25)
Applications Claiming Priority (29)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP44252/2001 | 2001-02-20 | ||
JP2001044252 | 2001-02-20 | ||
JP44252/01 | 2001-02-20 | ||
JP197274/01 | 2001-06-28 | ||
JP2001197274 | 2001-06-28 | ||
JP197274/2001 | 2001-06-28 | ||
JP350598/2001 | 2001-11-15 | ||
JP350598/01 | 2001-11-15 | ||
JP2001350598 | 2001-11-15 | ||
JP378838/2001 | 2001-12-12 | ||
JP2001378838 | 2001-12-12 | ||
JP378838/01 | 2001-12-12 | ||
JP400882/2001 | 2001-12-28 | ||
JP2001400866 | 2001-12-28 | ||
JP400891/2001 | 2001-12-28 | ||
JP400876/01 | 2001-12-28 | ||
JP400866/01 | 2001-12-28 | ||
JP400872/2001 | 2001-12-28 | ||
JP2001400888 | 2001-12-28 | ||
JP400888/2001 | 2001-12-28 | ||
JP2001400876 | 2001-12-28 | ||
JP400876/2001 | 2001-12-28 | ||
JP400866/2001 | 2001-12-28 | ||
JP2001400882 | 2001-12-28 | ||
JP400888/01 | 2001-12-28 | ||
JP2001400891 | 2001-12-28 | ||
JP2001400872 | 2001-12-28 | ||
JP400882/01 | 2001-12-28 | ||
JP400872/01 | 2001-12-28 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005101082599A Division CN1746255B (zh) | 2001-02-20 | 2002-02-20 | 抛光剂及基片的抛光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1457506A CN1457506A (zh) | 2003-11-19 |
CN1290162C true CN1290162C (zh) | 2006-12-13 |
Family
ID=27580547
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028003535A Expired - Lifetime CN1290162C (zh) | 2001-02-20 | 2002-02-20 | 抛光剂及基片的抛光方法 |
CN2005101082599A Expired - Lifetime CN1746255B (zh) | 2001-02-20 | 2002-02-20 | 抛光剂及基片的抛光方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005101082599A Expired - Lifetime CN1746255B (zh) | 2001-02-20 | 2002-02-20 | 抛光剂及基片的抛光方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6786945B2 (zh) |
EP (2) | EP1369906B1 (zh) |
JP (2) | JPWO2002067309A1 (zh) |
KR (1) | KR100512134B1 (zh) |
CN (2) | CN1290162C (zh) |
WO (1) | WO2002067309A1 (zh) |
Cited By (9)
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CN102666014A (zh) * | 2010-03-12 | 2012-09-12 | 日立化成工业株式会社 | 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法 |
CN104321854A (zh) * | 2012-05-22 | 2015-01-28 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体 |
CN104877633A (zh) * | 2015-05-26 | 2015-09-02 | 上海大学 | 镁元素掺杂氧化硅溶胶复合磨粒、抛光液及其制备方法 |
US9881802B2 (en) | 2010-11-22 | 2018-01-30 | Hitachi Chemical Company, Ltd | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
US9932497B2 (en) | 2012-05-22 | 2018-04-03 | Hitachi Chemical Company, Ltd. | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
US9988573B2 (en) | 2010-11-22 | 2018-06-05 | Hitachi Chemical Company, Ltd. | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
US10196542B2 (en) | 2012-02-21 | 2019-02-05 | Hitachi Chemical Company, Ltd | Abrasive, abrasive set, and method for abrading substrate |
US10557058B2 (en) | 2012-02-21 | 2020-02-11 | Hitachi Chemical Company, Ltd. | Polishing agent, polishing agent set, and substrate polishing method |
US10557059B2 (en) | 2012-05-22 | 2020-02-11 | Hitachi Chemical Company, Ltd. | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
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US20030087178A1 (en) * | 2001-04-20 | 2003-05-08 | Adrian Lungu | Photopolymerizable element for use as a flexographic printing plate and a process for preparing the plate from the element |
CN1240816C (zh) * | 2001-12-12 | 2006-02-08 | 海力士半导体有限公司 | 除去光致抗蚀剂的洗涤液 |
US7316603B2 (en) * | 2002-01-22 | 2008-01-08 | Cabot Microelectronics Corporation | Compositions and methods for tantalum CMP |
TWI282360B (en) * | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
TW592894B (en) * | 2002-11-19 | 2004-06-21 | Iv Technologies Co Ltd | Method of fabricating a polishing pad |
WO2004053456A2 (en) * | 2002-12-09 | 2004-06-24 | Corning Incorporated | Method using multi-component colloidal abrasives for cmp processing of semiconductor and optical materials |
US7553345B2 (en) * | 2002-12-26 | 2009-06-30 | Kao Corporation | Polishing composition |
US20040123528A1 (en) * | 2002-12-30 | 2004-07-01 | Jung Jong Goo | CMP slurry for semiconductor device, and method for manufacturing semiconductor device using the same |
US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
JP2004297035A (ja) * | 2003-03-13 | 2004-10-21 | Hitachi Chem Co Ltd | 研磨剤、研磨方法及び電子部品の製造方法 |
KR100539983B1 (ko) * | 2003-05-15 | 2006-01-10 | 학교법인 한양학원 | Cmp용 세리아 연마제 및 그 제조 방법 |
JP3974127B2 (ja) * | 2003-09-12 | 2007-09-12 | 株式会社東芝 | 半導体装置の製造方法 |
US20070082456A1 (en) * | 2003-11-14 | 2007-04-12 | Nobuo Uotani | Polishing composition and polishing method |
KR100682188B1 (ko) * | 2003-11-25 | 2007-02-12 | 주식회사 하이닉스반도체 | 포토레지스트 세정액 조성물 및 이를 이용한 패턴 형성방법 |
CN1667026B (zh) | 2004-03-12 | 2011-11-30 | K.C.科技股份有限公司 | 抛光浆料及其制备方法和基板的抛光方法 |
TW200613485A (en) * | 2004-03-22 | 2006-05-01 | Kao Corp | Polishing composition |
US7497967B2 (en) * | 2004-03-24 | 2009-03-03 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Compositions and methods for polishing copper |
WO2006009160A1 (ja) * | 2004-07-23 | 2006-01-26 | Hitachi Chemical Co., Ltd. | Cmp研磨剤及び基板の研磨方法 |
US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
JP2006121001A (ja) * | 2004-10-25 | 2006-05-11 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法および研磨剤 |
JP2006140361A (ja) * | 2004-11-12 | 2006-06-01 | Showa Denko Kk | 研磨組成物 |
US20060108325A1 (en) * | 2004-11-19 | 2006-05-25 | Everson William J | Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers |
US20060135045A1 (en) * | 2004-12-17 | 2006-06-22 | Jinru Bian | Polishing compositions for reducing erosion in semiconductor wafers |
JP2008536302A (ja) * | 2005-03-25 | 2008-09-04 | デュポン エアー プロダクツ ナノマテリアルズ リミテッド ライアビリティ カンパニー | 金属イオン酸化剤を含む、化学的、機械的研磨組成物において使用するジヒドロキシエノール化合物 |
US20060216935A1 (en) * | 2005-03-28 | 2006-09-28 | Ferro Corporation | Composition for oxide CMP in CMOS device fabrication |
US7467988B2 (en) * | 2005-04-08 | 2008-12-23 | Ferro Corporation | Slurry composition and method for polishing organic polymer-based ophthalmic substrates |
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- 2002-02-20 EP EP11184474A patent/EP2418258A1/en not_active Withdrawn
- 2002-02-20 WO PCT/JP2002/001483 patent/WO2002067309A1/ja active IP Right Grant
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CN104321854A (zh) * | 2012-05-22 | 2015-01-28 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体 |
CN104877633A (zh) * | 2015-05-26 | 2015-09-02 | 上海大学 | 镁元素掺杂氧化硅溶胶复合磨粒、抛光液及其制备方法 |
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US20040065022A1 (en) | 2004-04-08 |
CN1746255B (zh) | 2010-11-10 |
JP2009010402A (ja) | 2009-01-15 |
JPWO2002067309A1 (ja) | 2004-06-24 |
KR100512134B1 (ko) | 2005-09-02 |
EP1369906A4 (en) | 2009-07-15 |
US6786945B2 (en) | 2004-09-07 |
EP2418258A1 (en) | 2012-02-15 |
CN1746255A (zh) | 2006-03-15 |
JP4941430B2 (ja) | 2012-05-30 |
WO2002067309A1 (fr) | 2002-08-29 |
EP1369906A1 (en) | 2003-12-10 |
EP1369906B1 (en) | 2012-06-27 |
CN1457506A (zh) | 2003-11-19 |
KR20020086953A (ko) | 2002-11-20 |
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