CN1290197C - 用于制造半导体集成电路器件的方法 - Google Patents
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- CN1290197C CN1290197C CNB018229441A CN01822944A CN1290197C CN 1290197 C CN1290197 C CN 1290197C CN B018229441 A CNB018229441 A CN B018229441A CN 01822944 A CN01822944 A CN 01822944A CN 1290197 C CN1290197 C CN 1290197C
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
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- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
Abstract
Description
Claims (3)
Applications Claiming Priority (3)
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JP69514/01 | 2001-03-12 | ||
JP2001069514 | 2001-03-12 | ||
JP69514/2001 | 2001-03-12 |
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CNB2006101357454A Division CN100447980C (zh) | 2001-03-12 | 2001-10-31 | 用于制造半导体集成电路器件的方法 |
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CN1505840A CN1505840A (zh) | 2004-06-16 |
CN1290197C true CN1290197C (zh) | 2006-12-13 |
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CNB2006101357454A Expired - Fee Related CN100447980C (zh) | 2001-03-12 | 2001-10-31 | 用于制造半导体集成电路器件的方法 |
CNB018229441A Expired - Fee Related CN1290197C (zh) | 2001-03-12 | 2001-10-31 | 用于制造半导体集成电路器件的方法 |
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KR (2) | KR100653796B1 (zh) |
CN (2) | CN100447980C (zh) |
TW (1) | TW536753B (zh) |
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Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7358171B2 (en) * | 2001-08-30 | 2008-04-15 | Micron Technology, Inc. | Method to chemically remove metal impurities from polycide gate sidewalls |
US6804136B2 (en) * | 2002-06-21 | 2004-10-12 | Micron Technology, Inc. | Write once read only memory employing charge trapping in insulators |
US7193893B2 (en) * | 2002-06-21 | 2007-03-20 | Micron Technology, Inc. | Write once read only memory employing floating gates |
US7154140B2 (en) * | 2002-06-21 | 2006-12-26 | Micron Technology, Inc. | Write once read only memory with large work function floating gates |
US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US7221017B2 (en) * | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
US7847344B2 (en) * | 2002-07-08 | 2010-12-07 | Micron Technology, Inc. | Memory utilizing oxide-nitride nanolaminates |
US6967154B2 (en) * | 2002-08-26 | 2005-11-22 | Micron Technology, Inc. | Enhanced atomic layer deposition |
US20040155268A1 (en) * | 2003-02-06 | 2004-08-12 | Infineon Technologies North America Corp. | Method and apparatus for improving the electrical resistance of conductive paths |
TWI229368B (en) * | 2003-02-13 | 2005-03-11 | Tokyo Electron Ltd | Manufacturing method for semiconductor device and semiconductor manufacturing device |
JP4143505B2 (ja) | 2003-09-03 | 2008-09-03 | 株式会社半導体理工学研究センター | Mos型半導体装置及びその製造方法 |
WO2005083795A1 (ja) * | 2004-03-01 | 2005-09-09 | Tokyo Electron Limited | 半導体装置の製造方法及びプラズマ酸化処理方法 |
US8105958B2 (en) | 2004-08-13 | 2012-01-31 | Tokyo Electron Limited | Semiconductor device manufacturing method and plasma oxidation treatment method |
KR100586020B1 (ko) | 2004-11-19 | 2006-06-01 | 삼성전자주식회사 | 반도체 장치의 게이트 형성 방법 |
KR100638966B1 (ko) * | 2004-12-30 | 2006-10-26 | 동부일렉트로닉스 주식회사 | 플래시 메모리 소자의 게이트 형성 방법 |
CN101053083B (zh) * | 2005-02-01 | 2011-01-12 | 东京毅力科创株式会社 | 半导体装置的制造方法和等离子体氧化处理方法 |
US8211235B2 (en) * | 2005-03-04 | 2012-07-03 | Picosun Oy | Apparatuses and methods for deposition of material on surfaces |
KR100635201B1 (ko) * | 2005-03-10 | 2006-10-16 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 제조방법 |
KR100604943B1 (ko) * | 2005-06-20 | 2006-07-31 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
KR100673242B1 (ko) * | 2005-06-24 | 2007-01-22 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 유전체막 제조방법 |
US7442319B2 (en) * | 2005-06-28 | 2008-10-28 | Micron Technology, Inc. | Poly etch without separate oxide decap |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
KR100840786B1 (ko) * | 2006-07-28 | 2008-06-23 | 삼성전자주식회사 | 저저항 게이트 전극을 구비하는 반도체 장치 및 이의제조방법 |
KR100824406B1 (ko) * | 2006-11-01 | 2008-04-22 | 삼성전자주식회사 | 반도체 장치의 제조방법 |
JP2008140913A (ja) * | 2006-11-30 | 2008-06-19 | Toshiba Corp | 半導体装置 |
US8283718B2 (en) * | 2006-12-16 | 2012-10-09 | Spansion Llc | Integrated circuit system with metal and semi-conducting gate |
US8114736B2 (en) * | 2006-12-21 | 2012-02-14 | Globalfoundries Inc. | Integrated circuit system with memory system |
JP2008244455A (ja) * | 2007-02-28 | 2008-10-09 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP2008244456A (ja) * | 2007-02-28 | 2008-10-09 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
WO2008114363A1 (ja) * | 2007-03-16 | 2008-09-25 | Fujitsu Microelectronics Limited | 半導体装置の製造装置、および半導体装置の製造方法 |
JP5078693B2 (ja) | 2008-03-26 | 2012-11-21 | カヤバ工業株式会社 | ハイブリッド建設機械の制御装置 |
KR100936627B1 (ko) * | 2008-12-24 | 2010-01-13 | 주식회사 동부하이텍 | 플래시 메모리 소자 및 이의 제조 방법 |
TWI549198B (zh) | 2008-12-26 | 2016-09-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
JP2010165786A (ja) * | 2009-01-14 | 2010-07-29 | Toshiba Corp | 半導体装置及びその製造方法 |
US9127340B2 (en) * | 2009-02-13 | 2015-09-08 | Asm International N.V. | Selective oxidation process |
US8889565B2 (en) * | 2009-02-13 | 2014-11-18 | Asm International N.V. | Selective removal of oxygen from metal-containing materials |
JP2012174790A (ja) * | 2011-02-18 | 2012-09-10 | Elpida Memory Inc | 半導体装置及びその製造方法 |
KR20130060432A (ko) | 2011-11-30 | 2013-06-10 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
TWI447858B (zh) * | 2012-02-03 | 2014-08-01 | Inotera Memories Inc | 隨機存取記憶體的製造方法 |
US9269786B2 (en) * | 2013-09-26 | 2016-02-23 | Globalfoundries Inc. | Silicon nitride layer deposited at low temperature to prevent gate dielectric regrowth high-K metal gate field effect transistors |
US10460984B2 (en) | 2015-04-15 | 2019-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
US10665679B2 (en) * | 2016-02-08 | 2020-05-26 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device and method for manufacturing same |
KR102270458B1 (ko) * | 2017-06-05 | 2021-06-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 워드라인 저항을 낮추는 방법들 |
US10700072B2 (en) * | 2018-10-18 | 2020-06-30 | Applied Materials, Inc. | Cap layer for bit line resistance reduction |
TW202107528A (zh) * | 2019-04-30 | 2021-02-16 | 美商得昇科技股份有限公司 | 氫氣輔助的大氣自由基氧化 |
Family Cites Families (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5559729A (en) * | 1978-10-27 | 1980-05-06 | Fujitsu Ltd | Forming method of semiconductor surface insulating film |
JPS56107552A (en) | 1980-01-30 | 1981-08-26 | Hitachi Ltd | Manufacture of semiconductor device |
JPS59132136A (ja) * | 1983-01-19 | 1984-07-30 | Hitachi Ltd | 半導体装置の製造方法 |
JPS5910271A (ja) | 1983-06-20 | 1984-01-19 | Hitachi Ltd | 半導体装置 |
JPS6072229A (ja) | 1983-09-28 | 1985-04-24 | Hitachi Ltd | 半導体装置の電極・配線構造体 |
JPS6089943A (ja) | 1983-10-24 | 1985-05-20 | Hitachi Ltd | 半導体装置の製造方法 |
JPS60107840A (ja) | 1983-11-16 | 1985-06-13 | Hitachi Ltd | 半導体素子の製造法 |
JPS60123060A (ja) | 1983-12-07 | 1985-07-01 | Hitachi Ltd | 半導体装置 |
JPS61127124A (ja) | 1984-11-26 | 1986-06-14 | Hitachi Ltd | 半導体装置 |
JPS61127123A (ja) | 1984-11-26 | 1986-06-14 | Hitachi Ltd | ダイレクトコンタクトの形成方法 |
JPH0671076B2 (ja) | 1984-12-24 | 1994-09-07 | 株式会社日立製作所 | 半導体装置 |
JPS61152076A (ja) | 1984-12-26 | 1986-07-10 | Hitachi Ltd | 半導体装置用電極配線 |
JPS61267365A (ja) | 1985-05-22 | 1986-11-26 | Hitachi Ltd | 半導体装置 |
FR2605647B1 (fr) * | 1986-10-27 | 1993-01-29 | Nissim Yves | Procede de depot en phase vapeur par flash thermique d'une couche isolante sur un substrat en materiau iii-v, application a la fabrication d'une structure mis |
JPH0194657A (ja) | 1987-10-07 | 1989-04-13 | Hitachi Ltd | 半導体装置用電極・配線 |
JP2628341B2 (ja) * | 1988-05-19 | 1997-07-09 | フィガロ技研株式会社 | ガス検出方法及びその装置 |
JP2950555B2 (ja) | 1989-10-02 | 1999-09-20 | 株式会社東芝 | 半導体装置の製造方法 |
JPH03147328A (ja) * | 1989-11-01 | 1991-06-24 | Toshiba Corp | 半導体装置の製造方法 |
US5202096A (en) * | 1990-01-19 | 1993-04-13 | The Boc Group, Inc. | Apparatus for low temperature purification of gases |
JPH05141871A (ja) | 1991-11-22 | 1993-06-08 | Tadahiro Omi | 熱処理装置 |
JP3129338B2 (ja) | 1991-11-29 | 2001-01-29 | 忠弘 大見 | 酸化膜形成装置 |
JP3535876B2 (ja) | 1991-11-22 | 2004-06-07 | 財団法人国際科学振興財団 | 半導体装置及びその製造方法 |
JPH05144804A (ja) | 1991-11-22 | 1993-06-11 | Tadahiro Omi | 半導体装置の製造方法 |
JP3331636B2 (ja) | 1992-10-05 | 2002-10-07 | 忠弘 大見 | 水分発生方法 |
JPH06163871A (ja) | 1992-11-24 | 1994-06-10 | Sony Corp | 固体撮像装置 |
JP3310386B2 (ja) | 1993-05-25 | 2002-08-05 | 忠弘 大見 | 絶縁酸化膜の形成方法及び半導体装置 |
JPH0786271A (ja) * | 1993-09-17 | 1995-03-31 | Fujitsu Ltd | シリコン酸化膜の作製方法 |
JP3277043B2 (ja) | 1993-09-22 | 2002-04-22 | 株式会社東芝 | 半導体装置の製造方法 |
JPH0794731A (ja) | 1993-09-24 | 1995-04-07 | Toshiba Corp | 半導体装置及びその製造方法 |
US5387540A (en) * | 1993-09-30 | 1995-02-07 | Motorola Inc. | Method of forming trench isolation structure in an integrated circuit |
FR2711275B1 (fr) * | 1993-10-15 | 1996-10-31 | Intel Corp | Procédé automatiquement aligné de contact en fabrication de semi-conducteurs et dispositifs produits. |
KR0179677B1 (ko) * | 1993-12-28 | 1999-04-15 | 사토 후미오 | 반도체장치 및 그 제조방법 |
JPH07321102A (ja) | 1994-05-26 | 1995-12-08 | Sony Corp | 半導体装置の製造方法 |
JP3405603B2 (ja) * | 1994-08-19 | 2003-05-12 | 株式会社東芝 | 半導体記憶装置 |
JP3027303B2 (ja) | 1994-09-13 | 2000-04-04 | 大陽東洋酸素株式会社 | 原料ガスとしてテトラエトキシシランを使用する化学蒸着装置から排出される排ガスの無害化処理方法及びその装置 |
JP3315287B2 (ja) | 1995-03-22 | 2002-08-19 | 株式会社東芝 | 半導体装置及びその製造方法 |
JPH0975651A (ja) | 1995-09-08 | 1997-03-25 | Sony Corp | 排ガス処理装置 |
JPH09172011A (ja) | 1995-12-19 | 1997-06-30 | Hitachi Ltd | 酸化膜形成方法 |
EP1911722A2 (en) | 1996-01-29 | 2008-04-16 | FUJIKIN Inc. | Method for generating moisture, reactor for generating moisture, method for controlling temperature of reactor for generating moisture, and method for forming platinum-coated catalyst layer |
JPH09298170A (ja) | 1996-04-30 | 1997-11-18 | Hitachi Ltd | 半導体装置用電極配線およびその製造方法 |
JPH10223900A (ja) | 1996-12-03 | 1998-08-21 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
TWI227531B (en) | 1997-03-05 | 2005-02-01 | Hitachi Ltd | Manufacturing method of semiconductor integrated circuit device |
JPH10335652A (ja) | 1997-05-30 | 1998-12-18 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH10340909A (ja) | 1997-06-06 | 1998-12-22 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH1126395A (ja) | 1997-07-01 | 1999-01-29 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4283904B2 (ja) | 1997-07-11 | 2009-06-24 | 株式会社東芝 | 半導体装置の製造方法 |
JP2972687B2 (ja) | 1998-01-16 | 1999-11-08 | 松下電子工業株式会社 | 半導体装置の製造方法 |
JPH11330274A (ja) * | 1998-05-12 | 1999-11-30 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH11330468A (ja) | 1998-05-20 | 1999-11-30 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体集積回路装置 |
JP2000036593A (ja) | 1998-07-17 | 2000-02-02 | Fujitsu Ltd | 半導体装置 |
JP3264324B2 (ja) | 1998-08-26 | 2002-03-11 | 日本電気株式会社 | 半導体装置の製造方法および半導体装置 |
JP4279380B2 (ja) | 1998-10-12 | 2009-06-17 | 邦宏 道端 | 推進装置 |
US6664196B1 (en) * | 1999-03-15 | 2003-12-16 | Matsushita Electric Industrial Co., Ltd. | Method of cleaning electronic device and method of fabricating the same |
JP3415549B2 (ja) * | 1999-03-15 | 2003-06-09 | 松下電器産業株式会社 | 電子デバイスの洗浄方法及びその製造方法 |
JP3482171B2 (ja) * | 1999-03-25 | 2003-12-22 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
JP2000349285A (ja) * | 1999-06-04 | 2000-12-15 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体集積回路装置 |
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WO2002073696A1 (fr) | 2002-09-19 |
US7049187B2 (en) | 2006-05-23 |
KR20050004924A (ko) | 2005-01-12 |
JPWO2002073696A1 (ja) | 2004-07-08 |
US7144766B2 (en) | 2006-12-05 |
JP4109118B2 (ja) | 2008-07-02 |
KR20030080239A (ko) | 2003-10-11 |
CN1505840A (zh) | 2004-06-16 |
CN100447980C (zh) | 2008-12-31 |
US7300833B2 (en) | 2007-11-27 |
US20040063276A1 (en) | 2004-04-01 |
JP2008211212A (ja) | 2008-09-11 |
TW536753B (en) | 2003-06-11 |
US20070048917A1 (en) | 2007-03-01 |
KR100653796B1 (ko) | 2006-12-05 |
JP4607197B2 (ja) | 2011-01-05 |
CN1941324A (zh) | 2007-04-04 |
US20060009046A1 (en) | 2006-01-12 |
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