CN1304826C - Method for improving excitatory performance of micromechanical resonance pressure sensor with single beam - Google Patents
Method for improving excitatory performance of micromechanical resonance pressure sensor with single beam Download PDFInfo
- Publication number
- CN1304826C CN1304826C CNB2004101010064A CN200410101006A CN1304826C CN 1304826 C CN1304826 C CN 1304826C CN B2004101010064 A CNB2004101010064 A CN B2004101010064A CN 200410101006 A CN200410101006 A CN 200410101006A CN 1304826 C CN1304826 C CN 1304826C
- Authority
- CN
- China
- Prior art keywords
- resistance
- pressure sensor
- excitation
- single beam
- resonance pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention relates to a method for improving the excitatory performance of a micro-mechanical resonant pressure sensor with a single-beam structure. In the method, an excitation resistor made on the surface of a resonant beam of the sensor is made into a platinum thin-film resistor by using platinum. The use of the method of the present invention can improve excitatory reliability and stability of the resonant single beam of the resonant pressure sensor.
Description
(1) technical field
The present invention relates to a kind of method that improves the micromechanical resonance pressure sensor excitation behavior, particularly a kind of method that improves excitatory performance of micromechanical resonance pressure sensor with single beam.
(2) background technology
At present, the micromechanical resonance pressure sensor kind is a lot, with regard to energisation mode, static excitation, electric magnetization, thermal excitation etc. is arranged, and with regard to structure, butterfly structure and single-beam formula structure is arranged.The thermal excitation resonance pressure sensor of existing a kind of single-spar construction has been described among Fig. 1, it is to be manufactured with one deck silicon thin film 3 on a silicon-based substrate 4, is manufactured with the excitation resistance 2 that picks up resistance 1 and be used to encourage described sensor resonance beam on the resonance beam that silicon thin film 3 forms.At present, described excitation resistance is to adopt polysilicon resistance, boron diffusion resistance, be difficult for the described resonance beam of excitation, as: " electronics and information journal " (Vol.23 that publish August calendar year 2001, No.8) put down in writing the method that a kind of platinum film resistor is made excitation resistance in " STUDY OF THERMALLY EXCITED SILICON BEAM RESONATOR " literary composition of 785-791 page or leaf, but these methods all do not solve excitation and the stability that encourages its low-power consumption under, the problem of poor reliability well.
(3) summary of the invention
Technical matters to be solved by this invention is to provide a kind of method that improves excitatory performance of micromechanical resonance pressure sensor with single beam, resonance beam easily is energized under low-power consumption, improves the excitation stability and the reliability of single-spar construction micromechanical resonance pressure sensor.
The technical scheme that the present invention solves the problems of the technologies described above is to be manufactured with platinum film excitation resistance on the resonance beam surface of single-spar construction micromechanical resonance pressure sensor.The square resistance of described platinum film excitation resistance is the 6-20 ohms/square, all-in resistance 132-440 ohm.
Beneficial effect.Because the present invention has adopted above-mentioned technical scheme, excitation resistance above the described sensor resonance beam is made square resistance and the suitable platinum film resistor of all-in resistance, compare for excitation resistance with existing polysilicon or the boron diffusion resistance of adopting, the heat sensitivity of platinum film resistor is good, resistance temperature concerns that the linearity is higher, can be represented by the formula in 0～+ 650 ℃ scope:
Rt＝R
0·〔1+At+Bt
2〕
Its coefficient is
A＝3.96847×10-3℃-1
B＝-5.84×10-7℃-2
R
0Be illustrated in the resistance R under 0 degree
tResistance when being illustrated in temperature and being t
Adopt this platinum film resistor of the present invention to make excitation resistance and can on the surface of described sensor resonance beam, form the thermal gradient field very soon, under low power consumption, just can encourage resonance beam rapidly, thereby improved the excitation behavior of single-spar construction micromechanical resonance pressure sensor, i.e. excitation stability, reliability improve greatly.Platinum film resistor, polysilicon, boron diffusion resistance are done the performance comparison such as the following table of excitation resistance:
| Title material | Temperature coefficient | The thermal gradient field changes height | Make difficulty or ease |
| Platinum resistance | 0.00374 | Office | Easily |
| Polysilicon resistance | 1-5×10 -9 | In | Be difficult to the consistance of control polysilicon resistance |
| | 2×10 -9 | Low | Easily |
(4) description of drawings
Fig. 1 is a kind of diagrammatic cross-section of micromechanical resonance pressure sensor of single-spar construction;
Fig. 2 is the diagrammatic cross-section of the micromechanical resonance pressure sensor chip of the single-spar construction in the time of will encouraging resistance to make platinum film resistor by method of the present invention;
Fig. 3 is the floor map of examples of implementation of the platinum film resistor of the inventive method.
(5) embodiment
The specific embodiment of the present invention is not limited only to following description.Below the present invention is further specified.
The inventive method is to make an excitation resistance 2 on resonance beam 6 surfaces of single-spar construction micromechanical resonance pressure sensor, should encourage resistance 2 usefulness platinum to make platinum film resistor.Platinum film resistor described in this example 2 is a horseshoe-shape, thickness 120-300 dust, preferred thickness are the 150-250 dust, and preferably thickness is 180 dusts, resistor stripe is wide to be 20 microns, length overall is 440 microns, and square resistance is the 6-20 ohms/square, and preferable square resistance is the 10-16 ohms/square, preferably square resistance is 14 ohms/square, total resistance is 132-440 ohm, and preferable all-in resistance is 220-352 ohm, and preferably all-in resistance is 208 ohm.The alloy platinum material purity of described making platinum film resistor is greater than 99.99%.The method that the method for making of described platinum film resistor 2 is well known to those skilled in the art neither theme of the present invention, now is summarized as follows, and is for reference.
It is silica-based at first to be made into described resonance pressure sensor bottom with method in common.Choose P type (100) crystal orientation, resistivity 7-13 Ω .cm,--oxidation (1 micron)--LPCVD deposit silicon nitride (thickness 1300-1450 dust)--the photoetching back side-dry etching silicon nitride--the silica-based completion of processing in bottom of resonance type pressure sensor that wet etching silicon dioxide-remove photoresist-wet etching silicon-degree of depth is that 300-320 micron-RCA cleaning-wet method is gone silicon nitride-positive photoetching (exposure of double-sided exposure machine)--the silicon degree of depth in wet etching silicon dioxide-dry etching front be 2-3 micron-remove photoresist--that the silicon chip that thickness is 500 microns-RCA cleans.
Then, make top layer single-spar construction and platinum film resistor. choose N-type (100) crystal orientation of preparation beam; Resistivity 7-13 Ω .cm; 500--/—————-- ( 5500-6500 ) — ( )--——— ( 15-25Ω ) ——— ( 80-120Ω,1.8-2.2 )----—— ( )--/ ( 120-300/200 )--/— ( )-- ( 1-1.2 )--—— ( )---- ( )--PECVD ( 5500-6500 )--—— ( )--—。
Used individual event technology in the above-mentioned technology is as cleaning, oxidation, deposited silicon nitride, burn into sputter, high annealing, attenuate, polishing ... or the like be this area current techique, no longer describe in detail.Sputter is a platinum more than 99.99% with alloy platinum material purity, the product of U.S. TOSOH company, titanium tungsten---W10%Ti90%, the product of U.S. TOSOH company.
Among Fig. 1, Fig. 2, Fig. 3, pick up resistance 1, encourage resistance 2 to be produced on the resonance beam 6 that forms on the silicon thin film 3 silicon thin film 3 and silicon-based substrate (bottom is silica-based) 4 bondings, pick up resistance 1 and be boron diffusion resistance, excitation resistance 2 is platinum film resistor, and 5 is aluminum lead, and 7 is silicon dioxide layer.
Claims (3)
1, a kind of method that improves excitatory performance of micromechanical resonance pressure sensor with single beam, on the resonance beam surface of this sensor, be manufactured with platinum film excitation resistance, it is characterized in that: the square resistance of described platinum film excitation resistance is the 6-20 ohms/square, all-in resistance 132-440 ohm.
2, the method for raising excitatory performance of micromechanical resonance pressure sensor with single beam according to claim 1 is characterized in that: the square resistance of described platinum film excitation resistance is the 10-16 ohms/square, and all-in resistance is 220-352 ohm.
3, the method for raising excitatory performance of micromechanical resonance pressure sensor with single beam according to claim 1 and 2 is characterized in that: the alloy platinum material purity of described making platinum film excitation resistance is greater than 99.99%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004101010064A CN1304826C (en) | 2004-12-01 | 2004-12-01 | Method for improving excitatory performance of micromechanical resonance pressure sensor with single beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004101010064A CN1304826C (en) | 2004-12-01 | 2004-12-01 | Method for improving excitatory performance of micromechanical resonance pressure sensor with single beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1645076A CN1645076A (en) | 2005-07-27 |
| CN1304826C true CN1304826C (en) | 2007-03-14 |
Family
ID=34869607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004101010064A Expired - Fee Related CN1304826C (en) | 2004-12-01 | 2004-12-01 | Method for improving excitatory performance of micromechanical resonance pressure sensor with single beam |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1304826C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109485011B (en) * | 2018-11-23 | 2020-11-10 | 北京遥测技术研究所 | MEMS resonant pressure sensor based on Si-Si-Si-glass wafer bonding technology and manufacturing process |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04162779A (en) * | 1990-10-26 | 1992-06-08 | Nippondenso Co Ltd | Semiconductor pressure sensor |
| US5605598A (en) * | 1990-10-17 | 1997-02-25 | The Charles Stark Draper Laboratory Inc. | Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency |
-
2004
- 2004-12-01 CN CNB2004101010064A patent/CN1304826C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5605598A (en) * | 1990-10-17 | 1997-02-25 | The Charles Stark Draper Laboratory Inc. | Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency |
| JPH04162779A (en) * | 1990-10-26 | 1992-06-08 | Nippondenso Co Ltd | Semiconductor pressure sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1645076A (en) | 2005-07-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103675048B (en) | A kind of metal-oxide gas transducer based on MEMS and preparation technology | |
| JP5699434B2 (en) | Glass for information recording medium substrate, glass substrate for information recording medium and magnetic disk | |
| CN100524768C (en) | Memory array having a layer with electrical conductivity anisotropy | |
| EP0892393A1 (en) | Laminated thin film disk for longitudinal recording | |
| JPS61188901A (en) | Membrane type resistance for flow rate sensor | |
| CN101059528A (en) | Cross structure two-D wind speed wind direction sensor and its preparation method | |
| CN110931629A (en) | Structure for growth of aluminum nitride with high scandium-doped concentration | |
| CN104205217A (en) | Magnetic recording medium for heat-assisted magnetic recording | |
| CN1304826C (en) | Method for improving excitatory performance of micromechanical resonance pressure sensor with single beam | |
| CN101580223A (en) | Manufacturing method of a piezoelectric micro-cantilever beam probe | |
| CN105829876A (en) | Electrode and method for making an electrode | |
| CN1040580C (en) | Gas sensor and method fabricating same | |
| CN107244645B (en) | Silicon substrate ScAlN film GHz resonator and preparation method thereof | |
| Schuler et al. | Influence of structure zone model parameters on the electrical properties of ZnO: Al sol–gel coatings | |
| CN107192744A (en) | The manufacture method of gas sensing resistance and the gas sensor manufactured using this method | |
| JP2007286617A5 (en) | ||
| CN102368042A (en) | Microflow sensor | |
| CN1722236A (en) | Perpendicular magnetic recording medium and method of manufacturing the same | |
| Hille et al. | A heated membrane for a capacitive gas sensor | |
| CN107887103A (en) | A kind of magneto-resistance film material and preparation method thereof | |
| KR101118223B1 (en) | Bio-sensor for measuring magnetoresistive and method for manufacturing the same | |
| JP4224061B2 (en) | Multilayer structure film and manufacturing method thereof | |
| CN108640078A (en) | A kind of pressure sensor and forming method thereof | |
| Dorey et al. | Screen printed PZT composite thick films | |
| CN101527349B (en) | Amorphous indium and tin oxide film and application thereof in manufacturing resistive memory element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |