CN1305108C - 具有成形衬底的发光二极管的结合以及用于结合具有成形衬底的发光二极管的夹头 - Google Patents
具有成形衬底的发光二极管的结合以及用于结合具有成形衬底的发光二极管的夹头 Download PDFInfo
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- CN1305108C CN1305108C CNB028186443A CN02818644A CN1305108C CN 1305108 C CN1305108 C CN 1305108C CN B028186443 A CNB028186443 A CN B028186443A CN 02818644 A CN02818644 A CN 02818644A CN 1305108 C CN1305108 C CN 1305108C
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- emitting diode
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- light
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- 239000000758 substrate Substances 0.000 title claims abstract description 177
- 238000007493 shaping process Methods 0.000 claims description 94
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 35
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 26
- 229910002601 GaN Inorganic materials 0.000 claims description 19
- 230000008878 coupling Effects 0.000 claims description 16
- 238000010168 coupling process Methods 0.000 claims description 16
- 238000005859 coupling reaction Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims 1
- 230000001788 irregular Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000010008 shearing Methods 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000007731 hot pressing Methods 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 230000003014 reinforcing effect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000009417 prefabrication Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000010358 mechanical oscillation Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (45)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US30723401P | 2001-07-23 | 2001-07-23 | |
US60/307,234 | 2001-07-23 | ||
US10/185,350 | 2002-06-27 | ||
US10/185,350 US6747298B2 (en) | 2001-07-23 | 2002-06-27 | Collets for bonding of light emitting diodes having shaped substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1557014A CN1557014A (zh) | 2004-12-22 |
CN1305108C true CN1305108C (zh) | 2007-03-14 |
Family
ID=26881076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028186443A Expired - Lifetime CN1305108C (zh) | 2001-07-23 | 2002-07-22 | 具有成形衬底的发光二极管的结合以及用于结合具有成形衬底的发光二极管的夹头 |
Country Status (10)
Country | Link |
---|---|
US (2) | US6747298B2 (zh) |
EP (1) | EP1410426B1 (zh) |
JP (1) | JP4594618B2 (zh) |
KR (1) | KR20040029382A (zh) |
CN (1) | CN1305108C (zh) |
AT (1) | ATE548752T1 (zh) |
CA (1) | CA2454735A1 (zh) |
MY (1) | MY138237A (zh) |
TW (1) | TW557588B (zh) |
WO (1) | WO2003010798A2 (zh) |
Families Citing this family (49)
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US6747298B2 (en) | 2001-07-23 | 2004-06-08 | Cree, Inc. | Collets for bonding of light emitting diodes having shaped substrates |
AU2003263779A1 (en) | 2002-07-22 | 2004-02-09 | Cree, Inc. | Light emitting diode including barrier layers and manufacturing methods therefor |
JP2004128057A (ja) * | 2002-09-30 | 2004-04-22 | Fuji Photo Film Co Ltd | 発光装置およびその製造方法 |
US7009199B2 (en) * | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
CN1729582A (zh) | 2002-12-20 | 2006-02-01 | 克里公司 | 包含半导体平台结构和导电结的电子器件和所述器件的制作方法 |
US20040188696A1 (en) * | 2003-03-28 | 2004-09-30 | Gelcore, Llc | LED power package |
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US7462861B2 (en) * | 2004-04-28 | 2008-12-09 | Cree, Inc. | LED bonding structures and methods of fabricating LED bonding structures |
CN101032034A (zh) * | 2004-06-30 | 2007-09-05 | 克里公司 | 用于封装发光器件的芯片级方法和芯片级封装的发光器件 |
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DE102006015788A1 (de) * | 2006-01-27 | 2007-09-13 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
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US11792898B2 (en) | 2012-07-01 | 2023-10-17 | Ideal Industries Lighting Llc | Enhanced fixtures for area lighting |
US11160148B2 (en) | 2017-06-13 | 2021-10-26 | Ideal Industries Lighting Llc | Adaptive area lamp |
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- 2002-07-22 EP EP02763308A patent/EP1410426B1/en not_active Expired - Lifetime
- 2002-07-22 KR KR10-2004-7001064A patent/KR20040029382A/ko not_active Application Discontinuation
- 2002-07-22 CN CNB028186443A patent/CN1305108C/zh not_active Expired - Lifetime
- 2002-07-22 AT AT02763308T patent/ATE548752T1/de active
- 2002-07-22 JP JP2003516088A patent/JP4594618B2/ja not_active Expired - Lifetime
- 2002-07-22 TW TW091116248A patent/TW557588B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
---|---|
US20030042507A1 (en) | 2003-03-06 |
US6747298B2 (en) | 2004-06-08 |
ATE548752T1 (de) | 2012-03-15 |
EP1410426A2 (en) | 2004-04-21 |
MY138237A (en) | 2009-05-29 |
CA2454735A1 (en) | 2003-02-06 |
EP1410426B1 (en) | 2012-03-07 |
CN1557014A (zh) | 2004-12-22 |
JP2005510042A (ja) | 2005-04-14 |
KR20040029382A (ko) | 2004-04-06 |
WO2003010798A3 (en) | 2003-10-16 |
US7341175B2 (en) | 2008-03-11 |
TW557588B (en) | 2003-10-11 |
WO2003010798A2 (en) | 2003-02-06 |
US20040200882A1 (en) | 2004-10-14 |
JP4594618B2 (ja) | 2010-12-08 |
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