CN1324332C - Color light filter - Google Patents
Color light filter Download PDFInfo
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- CN1324332C CN1324332C CNB2004100489832A CN200410048983A CN1324332C CN 1324332 C CN1324332 C CN 1324332C CN B2004100489832 A CNB2004100489832 A CN B2004100489832A CN 200410048983 A CN200410048983 A CN 200410048983A CN 1324332 C CN1324332 C CN 1324332C
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Abstract
The present invention relates to a color light filter. Firstly, an indium oxide stannum layer grows on a glass substrate, and then a silicon nitride layer, an amorphous silicon layer, an N type silicon layer and a metallic layer orderly grow. The thickness and technological conditions of the layers are regulated in order to respectively fabricate different black matrix structures, red reflecting layer structures, green reflecting layer structures and blue reflecting layer structures.
Description
Technical field
The structure of the relevant a kind of LCD of the present invention, and particularly relevant a kind of colored filter.
Background technology
Liquid crystal (liquid crystal; LC) be material between crystal and liquid.When the stimulation that is subjected to outsides such as electric field, the arrangement meeting thereby the variation of liquid crystal molecule, and then control whether passing through of light.Utilize this characteristic of liquid crystal, can make it constitute the demonstration element.
On traditional colorful film transistor liquid crystal display (TFT-LCD) (Color TFT-LCD), be to adopt thin film transistor base plate and colored optical filtering substrates are separately made at present, finish through the mode of subsequent handlings such as the hot pressing group is upright again.Colored optical filtering substrates comprises the colored filter of three kinds of colors of RGB, and black matrix" (blackmatrix).Black matrix" is used to block the part of the close electrode of wiring and viewing area on thin film transistor (TFT), the tin indium oxide (ITO), and wherein the part near electrode can be because non-uniform electric or transverse electric field cause the situation of light leak.In addition, the major function of black matrix" is to increase color contrast and avoid light injury thin film transistor (TFT), so this black matrix" must have the characteristic of antiradar reflectivity and high optical density (OD) (Optical density).
Fig. 1 is the rough schematic of existing LCD display panel structure.Please refer to Fig. 1, thin film transistor (TFT) 106 is positioned on the thin film transistor base plate 102, and thin film transistor (TFT) 106 is responsible for changing the orientation of voltage with control liquid crystal molecule 108.Be black matrix" 118 under thin film transistor (TFT) 106, black matrix" 118 is made up of metal 112 and oxide 114, the most often the most at present utilizes crome metal and chromium oxide to form black matrix" 118.Be colored filter 120a between black matrix" 118, the light of light source 110 is filtered becomes red (R), green (G) or blue (B) light.In addition, above-mentioned black matrix" 118 all is positioned on the substrate 104 with colored filter 120a.
The general existing black matrix" that utilizes the metal/oxide structure has the not enough and reflective serious problem of light to external world of shading rate.Thin film transistor (TFT) is very responsive for light, influences the operation of thin film transistor (TFT) easily because low-light produces photocurrent, and stronger light then may damage thin film transistor (TFT).The shading rate deficiency not only can't provide the good light of thin film transistor (TFT) to cover, and makes the background color of display pannel only present mazarine, can't utilize the background color of black to increase the comparative of color visually.The reflective serious problem of light more makes the visual effect of display pannel descend to external world, causes the inconvenience in the use.
Summary of the invention
Therefore the purpose of this invention is to provide a kind of colored filter, can't provide the problem of good shading rate and antiradar reflectivity in order to improve existing black matrix".
Another object of the present invention is that a kind of good reflection type color optical filter is being provided.
According to colored filter of the present invention, be used for a LCD, this colored filter comprises at least: a substrate; One indium tin oxide layer is positioned on this substrate; One silicon nitride layer is positioned on this indium tin oxide layer, and the employed radio-frequency power of this silicon nitride layer of growing up is first a specific performance number; One amorphous silicon layer is positioned on this silicon nitride layer; One N type silicon layer is positioned on this amorphous silicon layer; And one metal level be positioned on this N type silicon layer, wherein said each layer has a specific one-tenth-value thickness 1/10 separately, when light from this this colored filter of substrate incident, this light leaves this colored filter by being followed original route by this metal layer reflection behind this substrate, this indium tin oxide layer, this silicon nitride layer, this amorphous silicon layer and this N type silicon layer in regular turn, this light is absorbed and produces by this indium tin oxide layer, this silicon nitride layer, this amorphous silicon layer and this N type silicon layer interferes, and is the light of particular color when making this light leave this colored filter.
According to a preferred embodiment of the present invention, the indium tin oxide layer of black matrix", silicon nitride layer, amorphous silicon layer, N type silicon layer and metal layer thickness are respectively about 420 , 500 , 500 , 500 , 780 .The CVD radio-frequency power of growth silicon nitride layer is 1.6 kilowatts, and metal level is to utilize the chromium metal.
The indium tin oxide layer of reflective blue color filter, silicon nitride layer, amorphous silicon layer, N type silicon layer and metal layer thickness are respectively about 420 , 500 , 500 , 500 , 780 .The CVD radio-frequency power of growth silicon nitride layer is 2.1 kilowatts, and metal level is to utilize the chromium metal.
The indium tin oxide layer of reflective green color filter, silicon nitride layer, amorphous silicon layer, N type silicon layer and metal layer thickness are respectively about 168 , 300 , 500 , 500 , 780 .The CVD radio-frequency power of growth silicon nitride layer is 1.6 kilowatts, and metal level is to utilize the chromium metal.
The indium tin oxide layer of reflective Red lightscreening plate, silicon nitride layer, amorphous silicon layer, N type silicon layer and metal layer thickness are respectively about 420 , 400 , 400 , 400 , 780 .The CVD radio-frequency power of growth silicon nitride layer is 2.1 kilowatts, and the metal series of strata are utilized the chromium metal.
Indium tin oxide layer, silicon nitride layer, amorphous silicon layer, N type silicon layer and the metal layer thickness of another kind of reflective Red lightscreening plate are respectively about 168 , 400 , 400 , 400 , 780 .The CVD radio-frequency power of growth silicon nitride layer is 1.6 kilowatts, and metal level is to utilize the chromium metal.
According to reflections of high brightness formula colored filter of the present invention.Be first growth one deck silicon nitride layer on glass substrate, grow up in regular turn again amorphous silicon layer, N type silicon layer and metal level.
According to another preferred embodiment of the present invention, the silicon nitride layer of reflections of high brightness formula Red lightscreening plate, amorphous silicon layer, N type silicon layer and metal layer thickness are respectively about 500 , 400 , 400 , 780 .The CVD radio-frequency power of growth silicon nitride layer is 1.6 kilowatts, and metal level is to utilize the chromium metal.
The silicon nitride layer of reflections of high brightness formula green color filter, amorphous silicon layer, N type silicon layer and metal layer thickness are respectively about 500 , 500 , 500 , 780 .The CVD radio-frequency power of growth silicon nitride layer is 1.6 kilowatts, and metal level is to utilize the chromium metal.
Black matrix structure of the present invention has good shading rate and antiradar reflectivity, long wavelength region (650nm～790nm) also can keep the reflectivity below 5%, improve significantly existing black matrix structure reflectivity not good with the high problem of long wavelength region reflectivity.
Silicon nitride layer in the colorful filter structure of the present invention, amorphous silicon layer and N type silicon layer all are to utilize CVD to grow up, and the black matrix structure of existing metal/oxide layers then is to utilize PVD to grow up.Light is if will form interference in film, the uniformity coefficient of film and the control of thickness are considerable, therefore changes the surface at pattern (Pattern) and goes up film forming, and for the uniformity coefficient and THICKNESS CONTROL of film, CVD is good than PVD.So the present invention has membrane quality and light interference effect preferably than prior art.
For further specifying above-mentioned purpose of the present invention, design feature and effect, the present invention is described in detail below with reference to accompanying drawing.
Description of drawings
Fig. 1 is the rough schematic of existing LCD display panel structure.
Fig. 2 is a kind of section of structure that illustrates according to a preferred embodiment of the present invention.
Fig. 3 is the reflectance spectrum figure that illustrates according to a preferred embodiment of the present invention.
Fig. 4 is a kind of section of structure that illustrates according to another preferred embodiment of the present invention.
Fig. 5 is the rough schematic of reflective liquid-crystal display panel construction.
Fig. 6 illustrates a kind of section of structure of a preferred embodiment again according to the present invention.
Embodiment
Can't provide the problem of good shading rate and antiradar reflectivity in order to improve existing black matrix", the present invention proposes a kind of colored filter.
The present invention is a first growth indium oxide layer tin layer on glass substrate, grow up in regular turn silicon nitride layer, amorphous silicon layer, N type silicon layer and metal level again.Extraneous light can enter colored filter of the present invention from glass substrate, utilize amorphous silicon layer and N type silicon layer to absorb light earlier, then metal level can block and extraneous ray of reflecting, and the light of incident and reflection can form destruction interference at indium tin oxide layer and silicon nitride layer.In addition, because the light of incident can be by metal layer reflection, so amorphous silicon layer and N type silicon layer can absorb light again.
Please refer to Fig. 2, it illustrates a kind of section of structure according to a preferred embodiment of the present invention.On glass substrate 202, utilize earlier physical vapor deposition (PVD) growth indium tin oxide layer 204.Then utilize chemical vapor deposition (CVD) grow up in regular turn silicon nitride layer 206, amorphous silicon layer 208 and N type silicon layer 210.At last, utilize PVD growth metal level 212 again, can obtain colored filter.
According to the preferred embodiment of a black matrix" of the present invention, above-mentioned indium tin oxide layer 204, silicon nitride layer 206, amorphous silicon layer 208, N type silicon layer 210 are respectively about 420 , 500 , 500 , 500 , 780 with the thickness of metal level 212.The CVD radio-frequency power of growth silicon nitride layer 206 is 1.6 kilowatts, and metal level 212 is to utilize the chromium metal, and utilizes phosphorus doping to form N type silicon layer 210.So, can form a black matrix structure with good shading filter and antiradar reflectivity.
Fig. 3 is the reflectance spectrum figure of preferred embodiment of the present invention, and spectrometric wavelength coverage is 390nm to 780nm.Spectral line 310 is the existing reflectivity spectral line that utilizes the black matrix" of chromium/chromium oxide, and spectral line 320 is the reflectivity spectral line of black matrix structure of the present invention.As shown in Figure 3, the reflectivity of black matrix structure of the present invention is approximately 2% between 390nm to 650nm, and all the reflectivity of the black matrix" of more existing chromium/chromium oxide 4% is low.And between 650nm to 790nm, be ruddiness and infrared light district, the reflectivity of the black matrix" of existing chromium/chromium oxide rises to 25% with the wavelength increase, and the reflectivity of black matrix structure of the present invention still can maintain below 5%, can keep antiradar reflectivity in the long wavelength zone, reduce reflective generation effectively.
The present invention is except that the structure of black matrix", radio-frequency power in the time of also can utilizing the above indium tin oxide layer 204 of modulation, silicon nitride layer 206, amorphous silicon layer 208, N type silicon layer 210 for example to utilize the change silicon nitride layer to grow up with thickness, the process conditions of metal level 212 each layers is produced the colored filter of different color and varying strength respectively to change the structure of silicon nitride layer.The application of the present invention aspect the reflection type color optical filter below is described, and enumerates the embodiment of several different colors and varying strength.
Below list the parameter condition of the embodiment of redness, green and blue reflection optical filter with table one.The parameter condition of Red lightscreening plate has two in the table one, illustrates that the present invention can obtain colored filter with a kind of color with the different parameter condition of utilization.The thickness of above-mentioned indium tin oxide layer 204, silicon nitride layer 206, amorphous silicon layer 208, N type silicon layer 210, metal level 212 and the CVD radio-frequency power of growth silicon nitride layer 206 are listed in the table one respectively.Wherein metal level 212 is to utilize the chromium metal, and utilizes phosphorus doping to form N type silicon layer 210.
Table one: the parameter condition of the reflection type color optical filter of various different colours.
| The color of colored filter | Red | Red | Green | Blue |
| The thickness of indium tin oxide layer 204 () | 168 | 420 | 168 | 420 |
| The thickness of silicon nitride layer 206 () | 400 | 400 | 300 | 500 |
| The thickness of amorphous silicon layer 208 () | 400 | 400 | 500 | 500 |
| The thickness () of N | 400 | 400 | 500 | 500 |
| The thickness of metal level 212 () | 780 | 780 | 780 | 780 |
| The CVD radio-frequency power of growth silicon nitride layer 206 (kilowatt) | 1.6 | 2.1 | 1.6 | 2.1 |
According to another preferred embodiment of the present invention, adjust the structure of above-mentioned reflection type color optical filter, wherein the indium tin oxide layer 204 of not growing up can obtain the reflection type color optical filter of high brightness.As shown in Figure 4, except that lacking indium tin oxide layer 204, all the other structures are identical with Fig. 2, and wherein metal level 212 is to utilize the chromium metal, and utilize phosphorus doping to form N type silicon layer 210.Table two is listed parameter condition red and green reflections of high brightness formula colored filter, comprises the thickness of silicon nitride layer 206, amorphous silicon layer 208, N type silicon layer 210, metal level 212 and the CVD radio-frequency power of growth silicon nitride layer 206.
Table two: the parameter condition of red with green reflections of high brightness formula colored filter.
| The color of colored filter | Red | Green |
| The thickness of silicon nitride layer 206 () | 500 | 500 |
| The thickness of amorphous silicon layer 208 () | 400 | 500 |
| The thickness () of N | 400 | 500 |
| The thickness of metal level 212 () | 780 | 780 |
| The CVD radio-frequency power of growth silicon nitride layer 206 (kilowatt) | 1.6 | 1.6 |
The present invention can adjust according to different liquid crystal panel structures, also can utilize reverse order above each layer of growing up, and is first growth layer of metal layer on substrate, the N type of growing up in regular turn again silicon layer, amorphous silicon layer, silicon nitride layer and indium tin oxide layer.Extraneous light can enter the reflection type color optical filter from indium tin oxide layer, utilize amorphous silicon layer and N type silicon layer to absorb particular color light in addition earlier, the extraneous ray of reflecting of metal level meeting then, light in the light of incident and reflection beyond the particular color can form destruction interference at indium tin oxide layer and silicon nitride layer, and amorphous silicon layer and N type silicon layer then are responsible for absorbing again particular color light in addition.So, colored filter of the present invention just can filter unwanted light, only reflects the light of particular color.Below enumerate another preferred embodiment of the present invention, illustrate colored filter that this kind reverse order grows up with and use.
Fig. 5 is the rough schematic of reflective liquid-crystal display panel construction.Please refer to Fig. 5, thin film transistor (TFT) 106 is positioned on the thin film transistor base plate 102, and thin film transistor (TFT) 106 is responsible for changing the orientation of voltage with control liquid crystal molecule 108.Be black matrix" 118 under thin film transistor (TFT) 106, black matrix" 118 is positioned on the substrate 104.Chromatic colour optical filter 120b on thin film transistor base plate 102, the light of light source 110 can arrive colored filter 120b by substrate 104, by colored filter 120b the light reflective filter is become red (R), green (G) or blue (B) light, and then outwards send by substrate 104.
Please refer to Fig. 6, it illustrates the section of structure that the present invention is applied to a preferred embodiment of reflective liquid-crystal display.On substrate 402, utilize earlier physical vapor deposition (PVD) growth metal level 212.Then utilize chemical vapor deposition (CVD) growth N type silicon layer 210, amorphous silicon layer 208 and silicon nitride layer 206.At last, utilize PVD growth indium tin oxide layer 204 again, can obtain the reflection type color optical filter.The thickness of above each layer of modulation and the parameter condition of technology can obtain the reflection type color optical filter of different colours, yet can be most individually with a kind of parameter condition of colored filter of color, are not limited only to single particular combinations.In addition, also can utilize removal indium tin oxide layer 204 wherein to make reflections of high brightness formula colored filter.
By the invention described above preferred embodiment as can be known, use the present invention and have following advantage.
1. black matrix structure of the present invention, have good shading rate and antiradar reflectivity, long wavelength region (650nm～790nm) also can keep the reflectivity below 5%, improve significantly existing black matrix structure reflectivity not good with the high problem of long wavelength region reflectivity.
2. the silicon nitride layer in the colorful filter structure of the present invention, amorphous silicon layer and N type silicon layer all are to utilize CVD to grow up, and the black matrix structure of existing metal/oxide layers then is to utilize PVD to grow up.Light is if will form interference in film, the uniformity coefficient of film and the control of thickness are considerable, thus on patterned surface film forming, for the uniformity coefficient and THICKNESS CONTROL of film, CVD is good than PVD.So the more existing technology of the present invention has membrane quality and light interference effect preferably.
3. material used in the present invention, for example silicon nitride layer, amorphous silicon layer and N type silicon layer all are existing and quite handy materials in LCD technology.And can once just in the CVD board, grow up and finish, not need extra technology or time.In addition, utilize the thickness and the process conditions of modulation indium tin oxide layer, silicon nitride layer, amorphous silicon layer, N type silicon layer and each layer of metal level, can obtain the optical filter of black matrix" or three kinds of colors of red, green, blue, be a simple colorful filter structure with low cost again.
Though the present invention describes with reference to current specific embodiment, but those of ordinary skill in the art will be appreciated that, above embodiment is used for illustrating the present invention, under the situation that does not break away from spirit of the present invention, also can make the variation or the replacement of various equivalences, therefore, as long as in connotation scope of the present invention in the scope to the variation of the foregoing description, claims that modification all will drop on the application.
Claims (10)
1. a colored filter is used for a LCD, and this colored filter comprises at least:
One substrate;
One indium tin oxide layer is positioned on this substrate;
One silicon nitride layer is positioned on this indium tin oxide layer, and the employed radio-frequency power of this silicon nitride layer of growing up is first a specific performance number;
One amorphous silicon layer is positioned on this silicon nitride layer;
One N type silicon layer is positioned on this amorphous silicon layer; And
One metal level is positioned on this N type silicon layer, wherein
Described each layer has a specific one-tenth-value thickness 1/10 separately,
When light from this this colored filter of substrate incident, this light leaves this colored filter by being followed original route by this metal layer reflection behind this substrate, this indium tin oxide layer, this silicon nitride layer, this amorphous silicon layer and this N type silicon layer in regular turn, this light is absorbed and produces by this indium tin oxide layer, this silicon nitride layer, this amorphous silicon layer and this N type silicon layer interferes, and is the light of particular color when making this light leave this colored filter.
2. colored filter as claimed in claim 1 is characterized in that the material of this substrate comprises glass at least.
3. colored filter as claimed in claim 1 is characterized in that the material of this metal level comprises chromium at least.
4. a colored filter is used for a LCD, and this colored filter comprises at least:
One substrate;
One silicon nitride layer is positioned on this substrate, and the employed radio-frequency power of this silicon nitride layer of growing up is first a specific performance number;
One amorphous silicon layer be positioned at this silicon nitride layer on;
One N type silicon layer be positioned at this amorphous silicon layer on; And
One metal level is positioned on this N type silicon layer, wherein
Described each layer has a specific one-tenth-value thickness 1/10 separately,
When light from this this colored filter of substrate incident, this light leaves this colored filter by being followed original route by this metal layer reflection behind this substrate, this silicon nitride layer, this amorphous silicon layer and this N type silicon layer in regular turn, this light is absorbed and produces by this silicon nitride layer, this amorphous silicon layer and this N type silicon layer interferes, and is the light of particular color when making this light leave this colored filter.
5. colored filter as claimed in claim 4 is characterized in that the material of this substrate comprises glass at least.
6. colored filter as claimed in claim 4 is characterized in that the material of this metal level comprises chromium at least.
7. a colored filter is used for a LCD, and this colored filter comprises at least:
One substrate;
One metal level is positioned on this substrate;
One N type silicon layer is positioned on this metal level;
One amorphous silicon layer is on this N type silicon layer;
One silicon nitride layer is positioned on this amorphous silicon layer, and the employed radio-frequency power of this silicon nitride layer of growing up is first a specific performance number; And
One indium tin oxide layer is positioned on this silicon nitride layer, wherein
Described each layer has a specific one-tenth-value thickness 1/10 separately,
When light from this this colored filter of indium tin oxide layer incident, this light leaves this colored filter by being followed original route by this metal layer reflection behind this indium tin oxide layer, this silicon nitride layer, this amorphous silicon layer and this N type silicon layer in regular turn, this light is absorbed and produces by this indium tin oxide layer, this silicon nitride layer, this amorphous silicon layer and this N type silicon layer interferes, and is the light of particular color when making this light leave this colored filter.
8. colored filter as claimed in claim 7 is characterized in that the material of this metal level comprises chromium at least.
9. a colored filter is used for a LCD, and this colored filter comprises at least:
One substrate;
One metal level is positioned on this substrate;
One N type silicon layer is positioned on this metal level;
One amorphous silicon layer is on this N type silicon layer; And
One silicon nitride layer is positioned on this amorphous silicon layer, and the employed radio-frequency power of this silicon nitride layer of growing up is first a specific performance number, wherein
Described each layer has a specific one-tenth-value thickness 1/10 separately,
When light from this this colored filter of silicon nitride layer incident, this light leaves this colored filter by being followed original route by this metal layer reflection behind this silicon nitride layer, this amorphous silicon layer and this N type silicon layer in regular turn, this light can be absorbed and produce by this silicon nitride layer, this amorphous silicon layer and this N type silicon layer interferes, and is the light of particular color when making this light leave this colored filter.
10. colored filter as claimed in claim 9 is characterized in that the material of this metal level comprises chromium at least.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100489832A CN1324332C (en) | 2004-06-14 | 2004-06-14 | Color light filter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100489832A CN1324332C (en) | 2004-06-14 | 2004-06-14 | Color light filter |
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| CN1324332C true CN1324332C (en) | 2007-07-04 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI457615B (en) * | 2011-04-25 | 2014-10-21 | E Ink Holdings Inc | Color filter, optical grating structure and display module |
| TWI507742B (en) * | 2013-11-26 | 2015-11-11 | E Ink Holdings Inc | Color filter substrate and display device |
| JP7307978B2 (en) * | 2018-11-15 | 2023-07-13 | 寧波融光納米科技有限公司 | Filter, manufacturing method thereof, display device and color powder |
| CN110501772A (en) * | 2019-08-02 | 2019-11-26 | 济南大学 | Surpass the ultrahigh resolution colored filter and its preparation method and application on surface based on amorphous silicon hydride |
| CN116381987B (en) * | 2023-05-31 | 2023-08-25 | 惠科股份有限公司 | Backlight module and display device |
Citations (4)
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|---|---|---|---|---|
| JPH04229805A (en) * | 1990-05-10 | 1992-08-19 | Boc Group Inc:The | Durable low-emissivity thin-film interference filter |
| EP0560534A1 (en) * | 1992-03-04 | 1993-09-15 | The Boc Group, Inc. | Interference filters |
| US6447891B1 (en) * | 1999-05-03 | 2002-09-10 | Guardian Industries Corp. | Low-E coating system including protective DLC |
| US6461731B1 (en) * | 1999-05-03 | 2002-10-08 | Guardian Industries Corp. | Solar management coating system including protective DLC |
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2004
- 2004-06-14 CN CNB2004100489832A patent/CN1324332C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04229805A (en) * | 1990-05-10 | 1992-08-19 | Boc Group Inc:The | Durable low-emissivity thin-film interference filter |
| EP0560534A1 (en) * | 1992-03-04 | 1993-09-15 | The Boc Group, Inc. | Interference filters |
| US6447891B1 (en) * | 1999-05-03 | 2002-09-10 | Guardian Industries Corp. | Low-E coating system including protective DLC |
| US6461731B1 (en) * | 1999-05-03 | 2002-10-08 | Guardian Industries Corp. | Solar management coating system including protective DLC |
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