CN1330412A - 使用碳纳米管的竖直纳米尺寸晶体管及其制造方法 - Google Patents

使用碳纳米管的竖直纳米尺寸晶体管及其制造方法 Download PDF

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CN1330412A
CN1330412A CN01122021A CN01122021A CN1330412A CN 1330412 A CN1330412 A CN 1330412A CN 01122021 A CN01122021 A CN 01122021A CN 01122021 A CN01122021 A CN 01122021A CN 1330412 A CN1330412 A CN 1330412A
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崔原凤
李兆远
李永熙
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Samsung Electronics Co Ltd
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Abstract

提供使用碳纳米管能够实现高密度集成,即万亿比特规模集成的竖直纳米尺寸晶体管,及其制造方法。在使用碳纳米管的竖直纳米尺寸晶体管中,具有几个纳米直径的孔形成在诸如间隔几个纳米的矾土的绝缘层中,以通过CVD,电泳或机械压缩,在纳米尺寸的孔中竖直排列碳纳米管,以用作沟道。而且,使用普通半导体制造方法,在碳纳米管附近形成栅,然后源和漏形成在每个碳纳米管的上下部分,从而制做出具有电子开关特征的竖直纳米尺寸晶体管。

Description

使用碳纳米管的竖直纳米尺寸晶体管及其制造方法
本发明涉及一种使用碳纳米管能够实现高密度集成，即万亿比特规模集成的竖直纳米尺寸晶体管及其制造方法。
使用常规硅衬底生产的开关器件基本上被构造成使得杂质扩散区，隔离区和沟道区水平连接。由多个开关器件组成的集成电路也被构造成使得水平排列每一个开关器件，以高密度集成。在杂质扩散区和隔离区形成在硅衬底上的情况中，在加工精度和集成中存在着限制。
金属氧化物半导体场效应晶体管(MOSFET)是一种最典型使用的精细开关器件。实际上，最小图形尺寸为0.25μm的256兆DRAM的面积大约为0.72μm2，最小图形尺寸为0.18μm的1千兆DRAM的面积大约为0.32μm2，最小图形尺寸为0.13μm的4千兆DRAM的面积大约为0.18μm2，并且最小图形尺寸为0.1μm的16千兆DRAM的面积大约为0.1μm2。
为克服小型化常规开关器件中存在的问题，已提议使用碳纳米管的开关器件。然而，提议的器件仍具有与其它常规开关器件相似的水平结构，并且难以控制各个碳纳米管。
因此，难以实现使用碳纳米管的器件的高密度集成。
为解决上述问题，本发明提供一种尺寸范围为几十纳米到一个微米的竖直晶体管，其使用万亿比特(tera-bit)规模的碳纳米管作为沟道，每一个碳纳米管具有几纳米的直径，并通过竖直生长和选择沉积生长在具有纳米尺寸孔的非传导衬底上。每一个碳纳米管的下上部分分别连接到源和漏上，栅插入到它们之间，用于执行开关转换。而且，本发明提供一种竖直纳米尺寸晶体管的制造方法。
具体地，提供一种使用碳纳米管的竖直纳米尺寸晶体管，纳米管包括具有纳米尺寸直径孔的绝缘层，提供在孔中竖直排列的碳纳米管，在碳纳米管附近的绝缘层上形成的栅，沉积在栅上以填充孔的非传导薄膜，在非传导薄膜和碳纳米管上形成的漏，在绝缘层和碳纳米管下形成的源。
在本发明中，绝缘层优选由Al2O3和Si中选出的一种材料形成，并且源和沟道优选由金属薄膜形成。
根据本发明的另一方面，提供使用碳纳米管的竖直纳米尺寸晶体管的制造方法，包括(a)在半导体衬底上形成源的步骤，(b)使用非传导材料形成绝缘层和在与间隔几个纳米的源对应的部分上形成具有纳米尺寸直径孔的步骤，(c)在孔中的源上竖直生长碳纳米管的步骤，(d)在碳纳米管附近形成栅的步骤，(e)在栅上沉积非传导薄膜以填充孔的步骤，以及(f)在非传导薄膜和碳纳米管上形成漏的步骤。
在步骤(b)，绝缘材料是从Al2O3和Si中优选出的一种材料，并且通过从化学气相沉积，电泳和机械压缩方法中选出的一种方法，优选执行步骤(c)。
而且，本发明提供一种使用碳纳米管的竖直纳米尺寸晶体管，纳米管包括具有纳米尺寸直径孔的绝缘层，提供在孔中竖直排列的碳纳米管，在绝缘层和碳纳米管上形成的漏，沉积在漏上的非传导薄膜，在非传导薄膜上形成的栅，在绝缘层和碳纳米管下形成的源。
在本发明的实施方案中，绝缘层优选由Al2O3和Si中选出的一种材料形成，并且源和沟道优选由金属薄膜形成。
或者，本发明提供一种使用碳纳米管的竖直纳米尺寸晶体管的制造方法，包括(a)在半导体衬底上形成源的步骤，(b)使用非传导材料形成绝缘层和在与间隔几个纳米的源对应的部分上形成具有纳米尺寸直径孔的步骤，(c)在孔中的源上竖直生长碳纳米管的步骤，(d)在非传导薄膜和碳纳米管上形成漏的步骤，(e)在漏上沉积非传导薄膜的步骤，以及(f)在非传导薄膜上形成栅的步骤。
根据本发明的该实施方案，在步骤(b)中非传导材料是从Al2O3和Si中优选出的一种材料，并且通过从化学气相沉积，电泳和机械压缩方法中选出的一种方法，优选执行步骤(c)。
参考附图，通过详细描述本发明优选实施方案，本发明上述目标和优点将变得更加明白，其中：
图1是根据本发明第一实施方案，使用碳纳米管的竖直纳米尺寸晶体管的竖直横截面视图；
图2是图1示出的竖直纳米尺寸晶体管的平面图；
图3A至3F是竖直横截面视图，示出了根据本发明使用碳纳米管的竖直纳米尺寸晶体管的制造方法中的加工步骤；
图4A和4B是根据本发明第二实施方案，使用碳纳米管的竖直纳米尺寸晶体管的竖直横截面视图和透视图；
图5A和5B是根据本发明，在竖直的纳米尺寸晶体管生产过程中，竖直生长的碳纳米管的透射电子显微镜(TEM)照片，其中图5A示出了直径大约为50nm的碳纳米管，并且图5B示出了直径大约为20nm的碳纳米管；
图6A是使用竖直生长的碳纳米管，利用电子束光刻法形成的电极图形的TEM照片，并且图6B是图6A的放大图；
图7是根据本发明，使用碳纳米管的竖直纳米尺寸晶体管的I-V特征曲线；
图8A和8B是根据本发明第二实施方案，在竖直的纳米尺寸晶体管的栅上施加偏压时的I-V特征曲线；以及
图9A和9B是直径大约为20nm的碳纳米管样品的I-V特征曲线，该碳纳米管在大约400℃至大约800℃退火。
根据附图，将详细描述根据本发明使用碳纳米管的竖直纳米尺寸晶体管及其制造方法。
首先解释根据本发明第一实施方案使用碳纳米管的竖直纳米尺寸晶体管。如图1所示，竖直排列的碳纳米管的单元构造如下。
首先，通过竖直生长和选择沉积，碳纳米管100布置在具有纳米尺寸孔10′的非传导衬底10上。栅20形成在碳纳米管100附近的非传导10上，绝缘薄膜30沉积在其上以填充孔10′。这里，诸如矾土的绝缘薄膜被用作非传导衬底10，并且孔的尺寸和相邻孔的距离可被调节到几个纳米的尺寸。以如此方式，可以得到高密度集成，即万亿比特规模集成。
换句话说，具有纳米尺寸直径的竖直生长的碳纳米管100被用作沟道，并且被构造得其下上部分分别连接到源40和漏50上，栅20插入到其间，使得可以执行开关。由于晶体管的尺寸可以做到几十纳米到大约一微米或更小的范围，因此可以得到高密度集成。参考图2，该图是图1示出的竖直的纳米尺寸晶体管的平面图，碳纳米管的直径范围为1至200nm，优选1-50nm，并且非传导薄膜30的宽度范围为50至500nm，优选50-100nm。
使用如此构造碳纳米管的竖直纳米尺寸晶体管，其特征在于电子由源40提供，以根据施加到栅20的电压精密地控制电流，然后电子被发射到漏50。由于单元是纳米尺寸的，可以控制电流具有小的负荷，即，纳米尺寸的晶体管具有低功率特征的优点。
图3A至3F是竖直横截面视图，示出了根据本发明使用碳纳米管的竖直纳米尺寸晶体管的制造方法中的加工步骤。参考该图，现在讨论使用碳纳米管的竖直纳米尺寸晶体管的制造方法的加工步骤。
如图3A所示，源40形成在半导体衬底200上。
然后，如图3B所示，使用诸如Al2O3或Si的非传导体形成绝缘层10，并且孔10′形成在源40上的绝缘层10的一部分中。
如图3C所示，通过CVD，电泳或机械压缩碳纳米管100被竖直生长在孔10′中的源40上。换句话说，形成孔10′，然后碳纳米管100只选择生长在孔10′中。
接下来，如图3D所示，栅20形成在碳纳米管100附近。
如图3E所示，非传导薄膜30沉积在栅20上以填充孔10′。
最后，如图3F所示，漏50形成在非传导薄膜30和碳纳米管100上，从而完成竖直的纳米尺寸晶体管。
根据图4A和4B，现在讨论根据本发明第二实施方案使用碳纳米管的竖直纳米尺寸的晶体管，除了栅20形成在漏50上之外，该晶体管与根据第一实施方案的竖直纳米尺寸的晶体管相同。
首先，通过竖直生长和选择沉积，碳纳米管100生长在具有纳米尺寸孔(未示出)的非传导衬底10上并被排列。源40和漏50连接到碳纳米管100的下上部分。非传导薄膜30形成在漏50上，栅20形成在非传导薄膜30上。这里，非传导薄膜30优选由SiO2形成。
使用具有纳米尺寸直径的如此竖直生长的碳纳米管100作为沟道，其下上部分分别连接到源40和漏50上，栅20设置在漏50上，于是可以执行开关。
图4B是图4A示出的使用碳纳米管的竖直纳米尺寸晶体管的透视图，其中源线和漏线在碳纳米管生长的位置交叉，以形成单元。而且，栅线在其不接触漏线的状态中打开或关闭电流。
根据本发明第一和第二实施方案使用碳纳米管竖直纳米尺寸晶体管的制造方法与碳纳米管100的生长步骤相似，但在栅20和漏50之间的位置关系上不同。也就是说，根据第二实施方案，在绝缘层10中形成碳纳米管后，漏50形成在绝缘层10和碳纳米管100上，这是由于栅20形成在漏50上，与第一实施方案不同。
形成漏50后，非传导层30形成在其上面。最后，栅20形成在非传导层30上，从而完成竖直的纳米尺寸晶体管。
图5A和5B是根据本发明，在竖直的纳米尺寸晶体管生产过程中，竖直生长的碳纳米管的TEM照片，其中图5A示出了直径大约为50nm的碳纳米管，并且图5B示出了直径大约为20nm的碳纳米管。
图6A是使用竖直生长的碳纳米管，利用电子束光刻法形成的电极图案的TEM照片，并且图6B是图6A的放大图。参考这些图，应当理解在电极图案中竖直生长的碳纳米管和金属电极连接。
图7是根据本发明，使用碳纳米管的竖直纳米尺寸晶体管的I-V特征曲线，从其中应当理解在低温电导测量中存在能量带隙，并且碳纳米管显示为晶体管的特征。
图8A和8B是根据本发明第二实施方案，在竖直纳米尺寸晶体管的栅上施加偏压时的I-V特征曲线，其中图8A示出了施加正偏压的情况，图8B示出了施加负偏压的情况。参考图8A和8B，应当理解电流只在一个方向流动。
图9A和9B是直径大约为20nm的碳纳米管样品的I-V特征曲线，该碳纳米管在大约400℃至大约800℃退火。具体地，图9A示出了在碳纳米管下面存在氧化层的情况，图9B示出了碳纳米管下面不存在氧化层的情况。应当理解碳纳米管可充当晶体管。
如上所述，在根据本发明使用碳纳米管的竖直纳米尺寸晶体管中，具有几纳米直径的孔被形成在诸如间隔几个纳米的矾土的绝缘层中，以通过CVD，电泳和机械压缩在纳米尺寸的孔中竖直排列碳纳米管，以用作沟道。而且，使用普通半导体制造方法，栅形成在碳纳米管附近，然后源和漏被形成在每个碳纳米管的下上部分，从而制作出具有电子开关特征的竖直纳米尺寸晶体管。
因此，利用碳纳米管的本质特征形成万亿比特规模的竖直类型晶体管，以克服常规半导体技术的限制。而且，根据本发明使用碳纳米管的竖直纳米尺寸晶体管具有低功率消耗。

Claims (12)

1.一种使用碳纳米管的竖直纳米尺寸晶体管包含：
具有纳米尺寸直径孔的绝缘层；
竖直排列在孔中的碳纳米管；
在碳纳米管附近形成在绝缘层上的栅；
沉积在栅上以填充孔的非传导薄膜；
在非传导薄膜和碳纳米管上形成的漏；以及
在绝缘层和碳纳米管下形成的源。
2.如权利要求1使用碳纳米管的竖直纳米尺寸晶体管，其中绝缘层是由Al2O3和Si中选出的一种材料形成。
3.如权利要求1使用碳纳米管的竖直纳米尺寸晶体管，其中源和漏由金属薄膜形成。
4.一种使用碳纳米管的竖直纳米尺寸晶体管的制造方法，包含以下步骤：
(a)在半导体衬底上形成源；
(b)使用非传导材料形成绝缘层和在与间隔几纳米的源对应的部分上形成具有纳米尺寸直径的孔；
(c)在孔中的源上竖直生长碳纳米管；
(d)在碳纳米管附近形成栅；
(e)在栅上沉积非传导薄膜以填充孔；以及
(f)在非传导薄膜和碳纳米管上形成漏。
5.如权利要求4的方法，其中在步骤(b)中，非传导材料是选自Al2O3和Si的一种材料。
6.如权利要求4的方法，其中通过从化学汽相沉积，电泳和机械压缩方法中选出的一种方法，执行步骤(c)。
7.一种使用碳纳米管的竖直纳米尺寸晶体管包含：
具有纳米尺寸直径孔的绝缘层；
竖直排列在孔中的碳纳米管；
在绝缘层和碳纳米管上形成的漏；
沉积在漏上的非传导薄膜；
在非传导薄膜上形成的栅；以及
在绝缘层和碳纳米管下形成的源。
8.如权利要求7使用碳纳米管的竖直纳米尺寸晶体管，其中绝缘层是由Al2O3和Si中选出的一种材料形成。
9.如权利要求7使用碳纳米管的竖直纳米尺寸晶体管，其中源和漏由金属薄膜形成。
10.一种使用碳纳米管的竖直纳米尺寸晶体管的制造方法，包含以下步骤：
(a)在半导体衬底上形成源；
(b)使用非传导材料形成绝缘层和在与间隔几纳米的源对应的部分上形成具有纳米尺寸直径的孔；
(c)在孔中的源上竖直生长碳纳米管；
(d)在非传导薄膜和碳纳米管上形成漏；
(e)在漏上沉积非传导薄膜；以及
(f)在非传导薄膜上形成栅。
11.如权利要求10的方法，其中在步骤(b)中，非传导材料是选自Al2O3和Si的一种材料。
12.如权利要求10的方法，其中通过从化学汽相沉积，电泳和机械压缩方法中选出的一种方法，执行步骤(c)。
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1317768C (zh) * 2002-11-15 2007-05-23 三星电子株式会社 利用垂直纳米管的非易失性存储装置
CN100364128C (zh) * 2002-12-23 2008-01-23 国际商业机器公司 压电器件及其制备方法
CN100428471C (zh) * 2005-01-31 2008-10-22 国际商业机器公司 混合半导体结构及其制造方法
CN100459098C (zh) * 2003-02-24 2009-02-04 因芬尼昂技术股份公司 铅直结构中具特制纳米管的集成电子组件及其制造方法
CN100466290C (zh) * 2002-10-29 2009-03-04 哈恩-迈特纳研究所柏林有限公司 场效应晶体管制造方法
CN101484997B (zh) * 2005-05-09 2011-05-18 南泰若股份有限公司 使用具有可重新编程电阻的纳米管制品的存储器阵列
CN1711645B (zh) * 2002-11-20 2011-06-22 索尼株式会社 电子器件及其制造方法
CN101959789B (zh) * 2008-02-04 2014-04-02 乐金显示有限公司 纳米器件、包括该纳米器件的晶体管、用于制造该纳米器件的方法,以及用于制造该晶体管的方法
CN108269802A (zh) * 2017-01-04 2018-07-10 上海新昇半导体科技有限公司 一种碳纳米管束场效应晶体管阵列及其制造方法

Families Citing this family (201)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10036897C1 (de) * 2000-07-28 2002-01-03 Infineon Technologies Ag Feldeffekttransistor, Schaltungsanordnung und Verfahren zum Herstellen eines Feldeffekttransistors
US7084507B2 (en) * 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
JP2003017508A (ja) * 2001-07-05 2003-01-17 Nec Corp 電界効果トランジスタ
KR100450825B1 (ko) * 2002-02-09 2004-10-01 삼성전자주식회사 탄소나노튜브를 이용하는 메모리 소자 및 그 제조방법
US6515325B1 (en) 2002-03-06 2003-02-04 Micron Technology, Inc. Nanotube semiconductor devices and methods for making the same
US7398259B2 (en) 2002-03-12 2008-07-08 Knowmtech, Llc Training of a physical neural network
US9269043B2 (en) 2002-03-12 2016-02-23 Knowm Tech, Llc Memristive neural processor utilizing anti-hebbian and hebbian technology
US8156057B2 (en) * 2003-03-27 2012-04-10 Knowm Tech, Llc Adaptive neural network utilizing nanotechnology-based components
US7412428B2 (en) 2002-03-12 2008-08-12 Knowmtech, Llc. Application of hebbian and anti-hebbian learning to nanotechnology-based physical neural networks
US20040039717A1 (en) * 2002-08-22 2004-02-26 Alex Nugent High-density synapse chip using nanoparticles
US6889216B2 (en) * 2002-03-12 2005-05-03 Knowm Tech, Llc Physical neural network design incorporating nanotechnology
US7392230B2 (en) * 2002-03-12 2008-06-24 Knowmtech, Llc Physical neural network liquid state machine utilizing nanotechnology
US7049625B2 (en) * 2002-03-18 2006-05-23 Max-Planck-Gesellschaft Zur Fonderung Der Wissenschaften E.V. Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell
US6891227B2 (en) * 2002-03-20 2005-05-10 International Business Machines Corporation Self-aligned nanotube field effect transistor and method of fabricating same
US6872645B2 (en) * 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
KR100451084B1 (ko) * 2002-04-11 2004-10-02 학교법인 선문학원 탄소나노튜브 가스센서의 제조방법
US7752151B2 (en) * 2002-06-05 2010-07-06 Knowmtech, Llc Multilayer training in a physical neural network formed utilizing nanotechnology
JP2004040844A (ja) * 2002-06-28 2004-02-05 Shinano Kenshi Co Ltd 整流子およびこれを用いた回転電機
US6979947B2 (en) 2002-07-09 2005-12-27 Si Diamond Technology, Inc. Nanotriode utilizing carbon nanotubes and fibers
US7827131B2 (en) * 2002-08-22 2010-11-02 Knowm Tech, Llc High density synapse chip using nanoparticles
US7012266B2 (en) 2002-08-23 2006-03-14 Samsung Electronics Co., Ltd. MEMS-based two-dimensional e-beam nano lithography device and method for making the same
AU2003304297A1 (en) 2002-08-23 2005-01-21 Sungho Jin Article comprising gated field emission structures with centralized nanowires and method for making the same
JP4547852B2 (ja) * 2002-09-04 2010-09-22 富士ゼロックス株式会社 電気部品の製造方法
TW560042B (en) * 2002-09-18 2003-11-01 Vanguard Int Semiconduct Corp ESD protection device
AU2003283973B2 (en) 2002-09-30 2008-10-30 Oned Material Llc Large-area nanoenabled macroelectronic substrates and uses therefor
US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US7619562B2 (en) * 2002-09-30 2009-11-17 Nanosys, Inc. Phased array systems
CN1745468B (zh) * 2002-09-30 2010-09-01 纳米系统公司 大面积纳米启动宏电子衬底及其用途
WO2004032190A2 (en) * 2002-09-30 2004-04-15 Nanosys, Inc. Integrated displays using nanowire transistors
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US7067867B2 (en) * 2002-09-30 2006-06-27 Nanosys, Inc. Large-area nonenabled macroelectronic substrates and uses therefor
US7507987B2 (en) * 2002-10-11 2009-03-24 Massachusetts Institute Of Technology Method of making packets of nanostructures
EP1560792B1 (en) * 2002-10-29 2014-07-30 President and Fellows of Harvard College Carbon nanotube device fabrication
US7253434B2 (en) * 2002-10-29 2007-08-07 President And Fellows Of Harvard College Suspended carbon nanotube field effect transistor
DE10250830B4 (de) * 2002-10-31 2015-02-26 Qimonda Ag Verfahren zum Herstellung eines Schaltkreis-Arrays
DE10250868B8 (de) * 2002-10-31 2008-06-26 Qimonda Ag Vertikal integrierter Feldeffekttransistor, Feldeffekttransistor-Anordnung und Verfahren zum Herstellen eines vertikal integrierten Feldeffekttransistors
DE10250834A1 (de) * 2002-10-31 2004-05-19 Infineon Technologies Ag Speicherzelle, Speicherzellen-Anordnung, Strukturier-Anordnung und Verfahren zum Herstellen einer Speicherzelle
DE10250829B4 (de) * 2002-10-31 2006-11-02 Infineon Technologies Ag Nichtflüchtige Speicherzelle, Speicherzellen-Anordnung und Verfahren zum Herstellen einer nichtflüchtigen Speicherzelle
KR100489800B1 (ko) * 2002-11-26 2005-05-16 한국전자통신연구원 캐패시터 및 그 제조방법
TWI220162B (en) * 2002-11-29 2004-08-11 Ind Tech Res Inst Integrated compound nano probe card and method of making same
US6870361B2 (en) * 2002-12-21 2005-03-22 Agilent Technologies, Inc. System with nano-scale conductor and nano-opening
KR100493166B1 (ko) 2002-12-30 2005-06-02 삼성전자주식회사 수직나노튜브를 이용한 메모리
US6933222B2 (en) * 2003-01-02 2005-08-23 Intel Corporation Microcircuit fabrication and interconnection
KR20040066270A (ko) * 2003-01-17 2004-07-27 삼성에스디아이 주식회사 카본계 물질로 이루어진 도전층이 형성된 애노드 기판을갖는 평판 디스플레이 장치
JP4000328B2 (ja) * 2003-02-06 2007-10-31 富士通株式会社 磁気記録媒体及びその製造方法
KR100988080B1 (ko) * 2003-02-27 2010-10-18 삼성전자주식회사 파묻힌 게이트 구조를 갖는 탄소나노튜브 트랜지스터 및그 제조 방법
WO2004086461A2 (en) * 2003-03-21 2004-10-07 North Carolina State University Methods for nanoscale structures from optical lithography and subsequent lateral growth
US20060276043A1 (en) * 2003-03-21 2006-12-07 Johnson Mark A L Method and systems for single- or multi-period edge definition lithography
TWI220163B (en) * 2003-04-24 2004-08-11 Ind Tech Res Inst Manufacturing method of high-conductivity nanometer thin-film probe card
WO2004105140A1 (ja) 2003-05-22 2004-12-02 Fujitsu Limited 電界効果トランジスタ及びその製造方法
US7199498B2 (en) 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
US7095645B2 (en) 2003-06-02 2006-08-22 Ambient Systems, Inc. Nanoelectromechanical memory cells and data storage devices
US7148579B2 (en) * 2003-06-02 2006-12-12 Ambient Systems, Inc. Energy conversion systems utilizing parallel array of automatic switches and generators
KR101015498B1 (ko) * 2003-06-14 2011-02-21 삼성전자주식회사 수직 카본나노튜브 전계효과트랜지스터 및 그 제조방법
US6909151B2 (en) 2003-06-27 2005-06-21 Intel Corporation Nonplanar device with stress incorporation layer and method of fabrication
DE10331528A1 (de) * 2003-07-11 2005-02-03 Infineon Technologies Ag DRAM-Halbleiterspeicherzelle sowie Verfahren zu deren Herstellung
US7426501B2 (en) 2003-07-18 2008-09-16 Knowntech, Llc Nanotechnology neural network methods and systems
DE10335813B4 (de) * 2003-08-05 2009-02-12 Infineon Technologies Ag IC-Chip mit Nanowires
DE10339529A1 (de) * 2003-08-21 2005-03-24 Hahn-Meitner-Institut Berlin Gmbh Vertikaler Nano-Transistor, Verfahren zu seiner Herstellung und Speicheranordnung
DE10339531A1 (de) * 2003-08-21 2005-03-31 Hahn-Meitner-Institut Berlin Gmbh Vertikaler Nano-Transistor, Verfahren zu seiner Herstellung und Speicheranordnung
FR2860780B1 (fr) * 2003-10-13 2006-05-19 Centre Nat Rech Scient Procede de synthese de structures filamentaires nanometriques et composants pour l'electronique comprenant de telles structures
JP4762522B2 (ja) * 2003-10-28 2011-08-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5250615B2 (ja) * 2003-10-28 2013-07-31 株式会社半導体エネルギー研究所 半導体装置
US7038299B2 (en) 2003-12-11 2006-05-02 International Business Machines Corporation Selective synthesis of semiconducting carbon nanotubes
US7374793B2 (en) * 2003-12-11 2008-05-20 International Business Machines Corporation Methods and structures for promoting stable synthesis of carbon nanotubes
WO2005069372A1 (en) * 2003-12-18 2005-07-28 International Business Machines Corporation Carbon nanotube conductor for trench capacitors
WO2005064664A1 (en) * 2003-12-23 2005-07-14 Koninklijke Philips Electronics N.V. Semiconductor device comprising a heterojunction
US8013359B2 (en) * 2003-12-31 2011-09-06 John W. Pettit Optically controlled electrical switching device based on wide bandgap semiconductors
US20050145838A1 (en) * 2004-01-07 2005-07-07 International Business Machines Corporation Vertical Carbon Nanotube Field Effect Transistor
JP3997991B2 (ja) * 2004-01-14 2007-10-24 セイコーエプソン株式会社 電子装置
DE102004003374A1 (de) * 2004-01-22 2005-08-25 Infineon Technologies Ag Halbleiter-Leistungsschalter sowie dafür geeignetes Herstellungsverfahren
US7211844B2 (en) 2004-01-29 2007-05-01 International Business Machines Corporation Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
US20050167655A1 (en) * 2004-01-29 2005-08-04 International Business Machines Corporation Vertical nanotube semiconductor device structures and methods of forming the same
US7553371B2 (en) * 2004-02-02 2009-06-30 Nanosys, Inc. Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production
US8025960B2 (en) * 2004-02-02 2011-09-27 Nanosys, Inc. Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production
US20110039690A1 (en) 2004-02-02 2011-02-17 Nanosys, Inc. Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production
US7829883B2 (en) 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays
KR101050468B1 (ko) * 2004-02-14 2011-07-19 삼성에스디아이 주식회사 바이오 칩 및 이를 이용한 바이오 분자 검출 시스템
US7456482B2 (en) * 2004-03-22 2008-11-25 Cabot Microelectronics Corporation Carbon nanotube-based electronic switch
US7115971B2 (en) 2004-03-23 2006-10-03 Nanosys, Inc. Nanowire varactor diode and methods of making same
AU2005251089A1 (en) * 2004-04-30 2005-12-15 Nanosys, Inc. Systems and methods for nanowire growth and harvesting
US20050279274A1 (en) * 2004-04-30 2005-12-22 Chunming Niu Systems and methods for nanowire growth and manufacturing
US7785922B2 (en) 2004-04-30 2010-08-31 Nanosys, Inc. Methods for oriented growth of nanowires on patterned substrates
US20060086994A1 (en) * 2004-05-14 2006-04-27 Susanne Viefers Nanoelectromechanical components
EP1774575A2 (en) * 2004-05-17 2007-04-18 Cambrios Technology Corp. Biofabrication of transistors including field effect transistors
US7268063B1 (en) * 2004-06-01 2007-09-11 University Of Central Florida Process for fabricating semiconductor component
GB0413310D0 (en) * 2004-06-15 2004-07-14 Koninkl Philips Electronics Nv Nanowire semiconductor device
US7109546B2 (en) 2004-06-29 2006-09-19 International Business Machines Corporation Horizontal memory gain cells
US7042009B2 (en) 2004-06-30 2006-05-09 Intel Corporation High mobility tri-gate devices and methods of fabrication
WO2006078281A2 (en) * 2004-07-07 2006-07-27 Nanosys, Inc. Systems and methods for harvesting and integrating nanowires
US7194912B2 (en) * 2004-07-13 2007-03-27 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Carbon nanotube-based sensor and method for continually sensing changes in a structure
WO2007024204A2 (en) 2004-07-19 2007-03-01 Ambient Systems, Inc. Nanometer-scale electrostatic and electromagnetic motors and generators
KR100666187B1 (ko) * 2004-08-04 2007-01-09 학교법인 한양학원 나노선을 이용한 수직형 반도체 소자 및 이의 제조 방법
US7348284B2 (en) 2004-08-10 2008-03-25 Intel Corporation Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow
US20080020499A1 (en) * 2004-09-10 2008-01-24 Dong-Wook Kim Nanotube assembly including protective layer and method for making the same
US7462890B1 (en) 2004-09-16 2008-12-09 Atomate Corporation Nanotube transistor integrated circuit layout
US7943418B2 (en) * 2004-09-16 2011-05-17 Etamota Corporation Removing undesirable nanotubes during nanotube device fabrication
US7776307B2 (en) * 2004-09-16 2010-08-17 Etamota Corporation Concentric gate nanotube transistor devices
US7345296B2 (en) * 2004-09-16 2008-03-18 Atomate Corporation Nanotube transistor and rectifying devices
US20060060863A1 (en) * 2004-09-22 2006-03-23 Jennifer Lu System and method for controlling nanostructure growth
US7422946B2 (en) 2004-09-29 2008-09-09 Intel Corporation Independently accessed double-gate and tri-gate transistors in same process flow
US7233071B2 (en) 2004-10-04 2007-06-19 International Business Machines Corporation Low-k dielectric layer based upon carbon nanostructures
JP2008515654A (ja) * 2004-10-12 2008-05-15 ナノシス・インク． 導電性ポリマー及び半導体ナノワイヤに基づいてプラスチック電子部品を製造するための完全に集積化された有機層プロセス
US7473943B2 (en) * 2004-10-15 2009-01-06 Nanosys, Inc. Gate configuration for nanowire electronic devices
US20060086977A1 (en) 2004-10-25 2006-04-27 Uday Shah Nonplanar device with thinned lower body portion and method of fabrication
US7550755B2 (en) * 2004-10-27 2009-06-23 Philips Lumiled Lighting Co., Llc Semiconductor device with tunable energy band gap
US20080012461A1 (en) * 2004-11-09 2008-01-17 Nano-Proprietary, Inc. Carbon nanotube cold cathode
US7569503B2 (en) 2004-11-24 2009-08-04 Nanosys, Inc. Contact doping and annealing systems and processes for nanowire thin films
US20060113524A1 (en) * 2004-12-01 2006-06-01 Colin Bill Polymer-based transistor devices, methods, and systems
US7560366B1 (en) 2004-12-02 2009-07-14 Nanosys, Inc. Nanowire horizontal growth and substrate removal
US7202173B2 (en) * 2004-12-20 2007-04-10 Palo Alto Research Corporation Incorporated Systems and methods for electrical contacts to arrays of vertically aligned nanorods
US7409375B2 (en) * 2005-05-23 2008-08-05 Knowmtech, Llc Plasticity-induced self organizing nanotechnology for the extraction of independent components from a data stream
US7502769B2 (en) * 2005-01-31 2009-03-10 Knowmtech, Llc Fractal memory and computational methods and systems based on nanotechnology
US20100065820A1 (en) * 2005-02-14 2010-03-18 Atomate Corporation Nanotube Device Having Nanotubes with Multiple Characteristics
US7518196B2 (en) 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
KR100688542B1 (ko) 2005-03-28 2007-03-02 삼성전자주식회사 수직형 나노튜브 반도체소자 및 그 제조방법
TWI420628B (zh) * 2005-03-28 2013-12-21 奈米碳管結合墊結構及其方法
CN102183630A (zh) * 2005-04-06 2011-09-14 哈佛大学校长及研究员协会 用碳纳米管控制的分子鉴定
US7989349B2 (en) * 2005-04-15 2011-08-02 Micron Technology, Inc. Methods of manufacturing nanotubes having controlled characteristics
US7230286B2 (en) * 2005-05-23 2007-06-12 International Business Machines Corporation Vertical FET with nanowire channels and a silicided bottom contact
CA2609042A1 (en) * 2005-06-02 2006-12-07 Nanosys, Inc. Light emitting nanowires for macroelectronics
US7278324B2 (en) * 2005-06-15 2007-10-09 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Carbon nanotube-based sensor and method for detection of crack growth in a structure
US7420396B2 (en) * 2005-06-17 2008-09-02 Knowmtech, Llc Universal logic gate utilizing nanotechnology
US7599895B2 (en) 2005-07-07 2009-10-06 Knowm Tech, Llc Methodology for the configuration and repair of unreliable switching elements
US7838943B2 (en) * 2005-07-25 2010-11-23 International Business Machines Corporation Shared gate for conventional planar device and horizontal CNT
US7352607B2 (en) * 2005-07-26 2008-04-01 International Business Machines Corporation Non-volatile switching and memory devices using vertical nanotubes
US7402875B2 (en) 2005-08-17 2008-07-22 Intel Corporation Lateral undercut of metal gate in SOI device
EP1755137A1 (en) * 2005-08-18 2007-02-21 University of Teheran A method of forming a carbon nanotube emitter, carbon nanotube emitter with applications in nano-printing and use thereof
US7491962B2 (en) * 2005-08-30 2009-02-17 Micron Technology, Inc. Resistance variable memory device with nanoparticle electrode and method of fabrication
KR100682952B1 (ko) * 2005-08-31 2007-02-15 삼성전자주식회사 나노탄성 메모리 소자 및 그 제조 방법
EP1938381A2 (en) * 2005-09-23 2008-07-02 Nanosys, Inc. Methods for nanostructure doping
DE102005046427B4 (de) * 2005-09-28 2010-09-23 Infineon Technologies Ag Leistungstransistor mit parallelgeschalteten Nanodrähten
JP5037804B2 (ja) * 2005-09-30 2012-10-03 富士通株式会社 垂直配向カーボンナノチューブを用いた電子デバイス
FR2891664B1 (fr) * 2005-09-30 2007-12-21 Commissariat Energie Atomique Transistor mos vertical et procede de fabrication
FR2895572B1 (fr) * 2005-12-23 2008-02-15 Commissariat Energie Atomique Materiau a base de nanotubes de carbone et de silicium utilisable dans des electrodes negatives pour accumulateur au lithium
EP1804286A1 (en) * 2005-12-27 2007-07-04 Interuniversitair Microelektronica Centrum Elongate nanostructure semiconductor device
KR101287350B1 (ko) * 2005-12-29 2013-07-23 나노시스, 인크. 패터닝된 기판 상의 나노와이어의 배향된 성장을 위한 방법
US7741197B1 (en) 2005-12-29 2010-06-22 Nanosys, Inc. Systems and methods for harvesting and reducing contamination in nanowires
US8394664B2 (en) * 2006-02-02 2013-03-12 William Marsh Rice University Electrical device fabrication from nanotube formations
US20070183189A1 (en) * 2006-02-08 2007-08-09 Thomas Nirschl Memory having nanotube transistor access device
US8785058B2 (en) * 2006-04-07 2014-07-22 New Jersey Institute Of Technology Integrated biofuel cell with aligned nanotube electrodes and method of use thereof
US8679630B2 (en) * 2006-05-17 2014-03-25 Purdue Research Foundation Vertical carbon nanotube device in nanoporous templates
US20080002755A1 (en) * 2006-06-29 2008-01-03 Raravikar Nachiket R Integrated microelectronic package temperature sensor
US8101984B2 (en) * 2006-07-07 2012-01-24 The Regents Of The University Of California Spin injector
US20080135892A1 (en) * 2006-07-25 2008-06-12 Paul Finnie Carbon nanotube field effect transistor and method of making thereof
KR100749751B1 (ko) 2006-08-02 2007-08-17 삼성전자주식회사 트랜지스터 및 그 제조 방법
KR100806129B1 (ko) 2006-08-02 2008-02-22 삼성전자주식회사 탄소 나노 튜브의 형성 방법
US7667260B2 (en) 2006-08-09 2010-02-23 Micron Technology, Inc. Nanoscale floating gate and methods of formation
US8643087B2 (en) * 2006-09-20 2014-02-04 Micron Technology, Inc. Reduced leakage memory cells
KR20090087467A (ko) * 2006-11-07 2009-08-17 나노시스, 인크. 나노와이어 성장 시스템 및 방법
US7786024B2 (en) * 2006-11-29 2010-08-31 Nanosys, Inc. Selective processing of semiconductor nanowires by polarized visible radiation
KR100820174B1 (ko) * 2006-12-05 2008-04-08 한국전자통신연구원 수직구조의 탄소나노튜브를 이용한 전자소자 및 그제조방법
WO2008069485A1 (en) * 2006-12-05 2008-06-12 Electronics And Telecommunications Research Institute The electronic devices using carbon nanotubes having vertical structure and the manufacturing method thereof
US8168495B1 (en) 2006-12-29 2012-05-01 Etamota Corporation Carbon nanotube high frequency transistor technology
US9806273B2 (en) * 2007-01-03 2017-10-31 The United States Of America As Represented By The Secretary Of The Army Field effect transistor array using single wall carbon nano-tubes
DE102007001130B4 (de) * 2007-01-04 2014-07-03 Qimonda Ag Verfahren zum Herstellen einer Durchkontaktierung in einer Schicht und Anordnung mit einer Schicht mit Durchkontaktierung
US7930257B2 (en) 2007-01-05 2011-04-19 Knowm Tech, Llc Hierarchical temporal memory utilizing nanotechnology
US9487877B2 (en) * 2007-02-01 2016-11-08 Purdue Research Foundation Contact metallization of carbon nanotubes
US7858918B2 (en) * 2007-02-05 2010-12-28 Ludwig Lester F Molecular transistor circuits compatible with carbon nanotube sensors and transducers
US7838809B2 (en) 2007-02-17 2010-11-23 Ludwig Lester F Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials
WO2008124084A2 (en) 2007-04-03 2008-10-16 Pinkerton Joseph F Nanoelectromechanical systems and methods for making the same
WO2009023304A2 (en) * 2007-05-02 2009-02-19 Atomate Corporation High density nanotube devices
US7736979B2 (en) * 2007-06-20 2010-06-15 New Jersey Institute Of Technology Method of forming nanotube vertical field effect transistor
US8546027B2 (en) * 2007-06-20 2013-10-01 New Jersey Institute Of Technology System and method for directed self-assembly technique for the creation of carbon nanotube sensors and bio-fuel cells on single plane
US7964143B2 (en) 2007-06-20 2011-06-21 New Jersey Institute Of Technology Nanotube device and method of fabrication
FR2920252A1 (fr) * 2007-08-24 2009-02-27 Commissariat Energie Atomique Procede de realisation d'un transistor comportant une connexion electrique a base de nanotubes ou de nanofils.
US8470408B2 (en) * 2007-10-02 2013-06-25 President And Fellows Of Harvard College Carbon nanotube synthesis for nanopore devices
KR20100110853A (ko) * 2007-12-31 2010-10-13 아토메이트 코포레이션 에지-접촉된 수직형 탄소 나노튜브 트랜지스터
KR101410930B1 (ko) * 2008-01-17 2014-06-23 삼성전자주식회사 탄소나노튜브 상의 금속 산화막 형성방법 및 이를 이용한탄소나노튜브 트랜지스터 제조방법
US20090194424A1 (en) * 2008-02-01 2009-08-06 Franklin Aaron D Contact metallization of carbon nanotubes
DE102008015118A1 (de) * 2008-03-10 2009-09-24 Ohnesorge, Frank, Dr. Raumtemperatur-Quantendraht-(array)-Feldeffekt-(Leistungs-) Transistor "QFET", insbesondere magnetisch "MQFET", aber auch elektrisch oder optisch gesteuert
US8912654B2 (en) * 2008-04-11 2014-12-16 Qimonda Ag Semiconductor chip with integrated via
US8362566B2 (en) 2008-06-23 2013-01-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
DE102009031481A1 (de) 2008-07-03 2010-02-11 Ohnesorge, Frank, Dr. Konzept für optische (Fernfeld-/Fresnel-Regime aber auch Nahfeld-) Mikroskopie/Spektroskopie unterhalb/jenseits des Beugungslimits - Anwendungen für optisches (aber auch elektronisches) schnelles Auslesen von ultrakleinen Speicherzellen in Form von lumineszierenden Quantentrögen - sowie in der Biologie/Kristallographie
KR101018294B1 (ko) * 2008-09-19 2011-03-04 한국과학기술원 수직형 트랜지스터 소자
US9494615B2 (en) * 2008-11-24 2016-11-15 Massachusetts Institute Of Technology Method of making and assembling capsulated nanostructures
KR101539669B1 (ko) * 2008-12-16 2015-07-27 삼성전자주식회사 코어-쉘 타입 구조물 형성방법 및 이를 이용한 트랜지스터 제조방법
US8715981B2 (en) * 2009-01-27 2014-05-06 Purdue Research Foundation Electrochemical biosensor
US8872154B2 (en) * 2009-04-06 2014-10-28 Purdue Research Foundation Field effect transistor fabrication from carbon nanotubes
KR101935416B1 (ko) 2009-05-19 2019-01-07 원드 매터리얼 엘엘씨 배터리 응용을 위한 나노구조화된 재료
DE102009041642A1 (de) 2009-09-17 2011-03-31 Ohnesorge, Frank, Dr. Quantendrahtarray-Feldeffekt-(Leistungs-)-Transistor QFET (insbesondere magnetisch - MQFET, aber auch elektrisch oder optisch angesteuert) bei Raumtemperatur, basierend auf Polyacetylen-artige Moleküle
DE102010007676A1 (de) 2010-02-10 2011-08-11 Ohnesorge, Frank, Dr., 91054 Konzept für lateral aufgelöste Fourier Transformations Infrarot Spektroskopie unterhalb/jenseits des Beugungslimits - Anwendungen für optisches (aber auch elektronisches) schnelles Auslesen von ultrakleinen Speicherzellen in Form von lumineszierenden Quantentrögen - sowie in der Biologie/Kristallographie
CN102214577B (zh) * 2010-04-09 2012-12-26 中国科学院微电子研究所 一种制作纳米开关的方法
US8659037B2 (en) 2010-06-08 2014-02-25 Sundiode Inc. Nanostructure optoelectronic device with independently controllable junctions
US8431817B2 (en) 2010-06-08 2013-04-30 Sundiode Inc. Multi-junction solar cell having sidewall bi-layer electrical interconnect
US8476637B2 (en) 2010-06-08 2013-07-02 Sundiode Inc. Nanostructure optoelectronic device having sidewall electrical contact
FR2962595B1 (fr) * 2010-07-06 2015-08-07 Commissariat Energie Atomique Dispositif microélectronique a niveaux métalliques d'interconnexion connectes par des vias programmables
KR101008026B1 (ko) * 2010-07-12 2011-01-14 삼성전자주식회사 파묻힌 게이트 구조를 갖는 탄소나노튜브 트랜지스터
US8288759B2 (en) 2010-08-04 2012-10-16 Zhihong Chen Vertical stacking of carbon nanotube arrays for current enhancement and control
TWI476948B (zh) * 2011-01-27 2015-03-11 Hon Hai Prec Ind Co Ltd 外延結構及其製備方法
US8633055B2 (en) 2011-12-13 2014-01-21 International Business Machines Corporation Graphene field effect transistor
US9024367B2 (en) * 2012-02-24 2015-05-05 The Regents Of The University Of California Field-effect P-N junction
CN104718170A (zh) 2012-09-04 2015-06-17 Ocv智识资本有限责任公司 碳强化的增强纤维在含水或非水介质内的分散
US9406888B2 (en) 2013-08-07 2016-08-02 GlobalFoundries, Inc. Carbon nanotube device
EP2947045B1 (en) 2014-05-19 2019-08-28 IMEC vzw Low defect-density vertical nanowire semiconductor structures and method for making such structures
US9515179B2 (en) 2015-04-20 2016-12-06 Semiconductor Components Industries, Llc Electronic devices including a III-V transistor having a homostructure and a process of forming the same
US9472773B1 (en) 2015-12-09 2016-10-18 International Business Machines Corporation Stacked carbon nanotube multiple threshold device
US10340459B2 (en) * 2016-03-22 2019-07-02 International Business Machines Corporation Terahertz detection and spectroscopy with films of homogeneous carbon nanotubes
RU175418U1 (ru) * 2016-12-12 2017-12-04 Российская Федерация, от имени которой выступает федеральное государственное казенное учреждение "Войсковая часть 68240" (ФГКУ "В/ч" 68240) Полевой транзистор на углеродной пленке с вертикальным каналом проводимости
KR102324232B1 (ko) 2020-06-03 2021-11-08 연세대학교 산학협력단 게이트-올-어라운드 구조의 수직형 트랜지스터 및 그 제조 방법
RU204091U1 (ru) * 2020-12-25 2021-05-06 Общество с ограниченной ответственностью "Сенсор Микрон" Полевой транзистор с вертикальным каналом для СВЧ - техники

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6038060A (en) * 1997-01-16 2000-03-14 Crowley; Robert Joseph Optical antenna array for harmonic generation, mixing and signal amplification
US6034389A (en) * 1997-01-22 2000-03-07 International Business Machines Corporation Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array
WO1998048456A1 (en) * 1997-04-24 1998-10-29 Massachusetts Institute Of Technology Nanowire arrays
US6069380A (en) * 1997-07-25 2000-05-30 Regents Of The University Of Minnesota Single-electron floating-gate MOS memory
KR100277881B1 (ko) * 1998-06-16 2001-02-01 김영환 트랜지스터
US6472705B1 (en) * 1998-11-18 2002-10-29 International Business Machines Corporation Molecular memory & logic
US6459095B1 (en) * 1999-03-29 2002-10-01 Hewlett-Packard Company Chemically synthesized and assembled electronics devices
US6062931A (en) * 1999-09-01 2000-05-16 Industrial Technology Research Institute Carbon nanotube emitter with triode structure
US6340822B1 (en) * 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US6297063B1 (en) * 1999-10-25 2001-10-02 Agere Systems Guardian Corp. In-situ nano-interconnected circuit devices and method for making the same
US6444256B1 (en) * 1999-11-17 2002-09-03 The Regents Of The University Of California Formation of nanometer-size wires using infiltration into latent nuclear tracks
US7335603B2 (en) * 2000-02-07 2008-02-26 Vladimir Mancevski System and method for fabricating logic devices comprising carbon nanotube transistors
CN101798057A (zh) * 2000-08-22 2010-08-11 哈佛学院董事会 生长半导体纳米线的方法
US6525453B2 (en) * 2001-05-02 2003-02-25 Huang Chung Cheng Field emitting display
JP2003018544A (ja) * 2001-06-29 2003-01-17 Nec Corp ディジタル放送用記録装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100466290C (zh) * 2002-10-29 2009-03-04 哈恩-迈特纳研究所柏林有限公司 场效应晶体管制造方法
CN1317768C (zh) * 2002-11-15 2007-05-23 三星电子株式会社 利用垂直纳米管的非易失性存储装置
CN1711645B (zh) * 2002-11-20 2011-06-22 索尼株式会社 电子器件及其制造方法
CN100364128C (zh) * 2002-12-23 2008-01-23 国际商业机器公司 压电器件及其制备方法
CN100459098C (zh) * 2003-02-24 2009-02-04 因芬尼昂技术股份公司 铅直结构中具特制纳米管的集成电子组件及其制造方法
CN100428471C (zh) * 2005-01-31 2008-10-22 国际商业机器公司 混合半导体结构及其制造方法
CN101484997B (zh) * 2005-05-09 2011-05-18 南泰若股份有限公司 使用具有可重新编程电阻的纳米管制品的存储器阵列
CN101959789B (zh) * 2008-02-04 2014-04-02 乐金显示有限公司 纳米器件、包括该纳米器件的晶体管、用于制造该纳米器件的方法,以及用于制造该晶体管的方法
CN108269802A (zh) * 2017-01-04 2018-07-10 上海新昇半导体科技有限公司 一种碳纳米管束场效应晶体管阵列及其制造方法
CN108269802B (zh) * 2017-01-04 2020-11-06 上海新昇半导体科技有限公司 一种碳纳米管束场效应晶体管阵列及其制造方法

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