CN1332443C - Leadframe for semiconductor device, method for manufacturing semiconductor device using the same, semiconductor device using the same, and electronic equipment - Google Patents

Leadframe for semiconductor device, method for manufacturing semiconductor device using the same, semiconductor device using the same, and electronic equipment Download PDF

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CN1332443C
CN1332443C CNB2003101029672A CN200310102967A CN1332443C CN 1332443 C CN1332443 C CN 1332443C CN B2003101029672 A CNB2003101029672 A CN B2003101029672A CN 200310102967 A CN200310102967 A CN 200310102967A CN 1332443 C CN1332443 C CN 1332443C
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wire
lead
wire holder
semiconductor device
holder
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CN1501486A (en
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高仓英也
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

A leadframe to be used in a semiconductor device comprises a plurality of parallel first leads and a plurality of parallel second leads. The pitch of the first leads is different from that of the second leads, and the first leads are joined end-to-end with the second leads. To obtain a leadframe for DIP packages, the first leads are encapsulated in a package and the second leads are allowed to project from the package. To obtain a leadframe for SOP packages, the first leads and the second leads are allowed to project from a package and the second leads are cut off later.

Description

Semiconductor device and wire holder thereof, the method for making this device and electronic equipment
Technical field
The present invention relates to be used for the semiconductor device and the electronic equipment of the wire holder (leadframe) of semiconductor device, the method for making the semiconductor device that uses this wire holder, this wire holder of use.
Background technology
(for example be used for semiconductor device, photoelectric coupled device) wire holder comprises many variations, as be used for DIP (Dual Inline Package, dual in-line package) encapsulation and SOP (Small OutlinePackage, little gabarit encapsulation) (seeing that sequence number is the openly Japan Patent of H7-94657).The wire holder that is used for the DIP encapsulation has the lead-in wire in the hole that is inserted in substrate, and the termination thickness of these lead-in wires is 0.25mm, and intervals is 2.54mm.The wire holder that is used for the SOP encapsulation has the lead-in wire that is placed on the substrate surface, and the termination thickness of these lead-in wires is 0.15 to 0.20mm, and intervals is 1.27mm.
Fig. 4 A is the plane graph of the photoelectric coupled device of the conventional wire holder that is used for DIP and encapsulates, and Fig. 4 B shows the internal structure of this photoelectric coupled device.Fig. 5 makes the flow chart of the process of this photoelectric coupled device for explanation.
In conventional photoelectric coupled device 101, with photocell 102 and light receiving element 103 is installed in respectively and circuit wafer welding (die bond) on head (header) 104a, the 105a of wire holder 104,105.Also photocell 102 and light receiving element 103 are distinguished wire bonds (wire bond) on lead-in wire 104b, the 105b of wire holder 104,105 by lead 106,107.Then, in order to discharge stress, carry out pre cap (precoat) with 108 pairs of photocells of silicones 102.Under the situation that the optical axis that makes photocell 102 and light receiving element 103 is in alignment with each other, with the fixed-site of wire holder 104,105.Then, as casting (primary molding) first, the transparent epoxy resin 111 of casting is to form the optical transmission path between photocell 102 and the light receiving element 103.In this case, carrying out first to wire holder 104,105, connecting rod blocks (primary tie bar cut).After this, as second casting (for example, the transfer molding method), casting shade epoxy resins is to form shell 112.To this packed part carry out electroplating surface again, for the secondary connecting rod of wire holder 104,105 block, go between formation (forming lead-in wire 104b, the 105b of shell 112 outsides), withstand voltage test (checking the insulation between photocell 102 and the light receiving element 103), electrical characteristics test (measuring various electrical characteristics), marking, inspection outward appearance and packing.At last, photoelectric coupled device 101 is transported as commodity.
Owing to designed to be used DIP encapsulation, so wire holder 104,105 itself has lead-in wire 104b, the 105b that stretches out downwards, so that insert the hole in the substrate.
For second casting, can use injection moulding, casting and transfer molding method etc.In addition, the casting first for being used to form the optical transmission path between photocell 102 and the light receiving element 103 can replace transparent epoxy resin with transparent silicon resin.
Fig. 6 is for describing the flow chart of the process of making the conventional wire holder that is used for the DIP encapsulation.
As the wire holder material, the metallic plate (copper or iron plate etc.) of rolling is stretching and carry out punching press with diel, make each wire holder can have head, lead-in wire and other parts (punch steps).Then, the head that is used for installation elements with in the zone that is connected with sealing wire, with silver each wire holder is electroplated (plating step).Then, the head of each wire holder and lead-in wire are carried out bending and they are blocked into the length (crooked/block step) of regulation.When the bar shaped wire holder is provided, carry out this processing of blocking, still, when the scroll wire holder is provided, then omits and block processing.At last, as commodity, provide scroll or bar shaped wire holder.
According to circumstances, can carry out punch steps, plating step and bending/block step according to different orders.
Fig. 7 A is the plane graph of the photoelectric coupled device of the conventional wire holder that is used for SOP and encapsulates, and Fig. 7 B shows the internal structure of this photoelectric coupled device.Fig. 8 makes the flow chart of the process of this photoelectric coupled device for explanation.For the photoelectric coupled device shown in Fig. 7 A and Fig. 7 B,, represent with identical reference number for those effect and Fig. 4 A and the mentioned effect components identical of Fig. 4 B.
When with Fig. 4 A and Fig. 4 B in photoelectric coupled device 101 when comparing, photoelectric coupled device 121 usefulness wire holders 124,125 replace the wire holder 104,105 of photoelectric coupled devices 101, and have adopted the different shell of structure 122.
Because designed to be used SOP encapsulation, therefore, wire holder 124,125 makes their lead-in wire 124b, 125b bending, so that contact with wiring diagram on the substrate surface.
Utilize the course of processing identical to make and be used for the wire holder that SOP encapsulates with as shown in Figure 6 the course of processing that is used to make the wire holder that is used for the DIP encapsulation.
Explanation in passing, at present, the assembly technology of electronic component mainly is divided into two trend.One is to utilize make-up machinery to promote automation, and another is to utilize Asian countries, mainly is China, the cheap labour, encourage manual operations.
Preceding a kind of technology, wherein make-up machinery is installed in electronic component on the substrate automatically by adverse current or alternate manner, need be used for the electronic component of the wire holder of small-sized SOP encapsulation.On the other hand, a kind of technology in back, wherein the workman utilizes manual lead-in wire with each electronic component to insert in the hole of substrate, need be used for the electronic component of the wire holder of DIP encapsulation.
From another viewpoint, be used for for use DIP encapsulation wire holder semiconductor device (for example, photoelectric coupled device) with the semiconductor device that is used for the wire holder that SOP encapsulates (for example, photoelectric coupled device), even their electrical characteristic is identical, but also must on different production lines, make.Therefore, should independently of each other the production schedule of these semiconductor device be adjusted according to market situation.
From another viewpoint, as previously mentioned, aspect lead spacing and lead ends thickness, the wire holder that is used for the DIP encapsulation is different with the wire holder that is used for the SOP encapsulation.Therefore, make these wire holders and need independent diel and bending die.
But the ratio that needs of semiconductor device and the semiconductor device that is used for the wire holder that SOP encapsulates that on the market use is used for the wire holder of DIP encapsulation constantly changes.In this case, arrange the production schedule of each semiconductor device to become the work of a difficulty.Such situation often occurs, that is, manufacturers may be exceeded their order of production capacity and flood, and perhaps can not satisfy unexpected order.
Summary of the invention
Consider the problems referred to above relevant, proposed the present invention with routine techniques.An object of the present invention is to provide wire holder, they can be adjusted along with the encapsulation of more than one types.
Another object of the present invention provides a kind of method, the semiconductor device that uses this wire holder and corresponding electronic device of making the semiconductor device that uses wire holder of the present invention.
In order to address the above problem, the wire holder that the present invention is conceived to use in semiconductor device, this wire holder comprise a plurality of first parallel lead-in wires and a plurality of second parallel lead-in wires.The spacing of first lead-in wire is different with the spacing of second lead-in wire, and first lead-in wire is end to end with second lead-in wire.
According to the present invention of such design, the spacing of first lead-in wire is different with the spacing of second lead-in wire, and first lead-in wire is end to end with second lead-in wire.On wire holder and in,, and only allowing second lead-in wire to stretch out semiconductor element mounting, then obtain being equipped with the semiconductor device of second lead-in wire from shell if first lead-in wire is packaged in the shell with the step of semiconductor component package in shell.Block if allow first lead-in wire and second lead-in wire all to stretch out and go between second subsequently, then obtain being equipped with the semiconductor device of first lead-in wire from shell.That is, although used the common lead base member,, any in two kinds of lead spacing can be set.The common leads base member has reduced material cost and material model, and has simplified component controls.In addition, production line can be used to have the semiconductor device of two kinds of models of different lead spacing.Shared production line can be easy to change the production schedule of two types semiconductor device, realizes the stable supply of semiconductor device and reduces cost of investment, and cheap semiconductor device is provided.
In the present invention, the thickness of a kind of lead-in wire in first lead-in wire or second lead-in wire is reduced.
For the method that is used for producing the semiconductor devices, be included on the wire holder of the present invention according to method of the present invention and semiconductor element be installed and the step of semiconductor component package in shell.In the method, the size of the shell that is used to pack is to be provided with like this, that is, a kind of lead-in wire at least the first lead-in wire or second lead-in wire stretches out from shell.
Manufacture method of the present invention can also realize the operation and effect identical operations and the effect that realize with wire holder of the present invention.
In addition, in the present invention, can utilize the mould that is used for cast envelope that first lead-in wire or the second at least a lead-in wire that goes between are pushed, their thickness is reduced.
Make at least a lead-in wire of first lead-in wire or second lead-in wire become thinner and make under the situation that their thickness reduces at the mould that utilization is used for cast envelope, do not need to comprise the specific step of the thickness that is used to reduce them, avoid cost to increase thus.
In addition, the present invention not only comprises wire holder and is used to make the method for the semiconductor device that uses this wire holder, and comprises semiconductor device and the electronic equipment that uses this wire holder.
Semiconductor device comprises photoelectrical coupler, integrated circuit (IC) and large scale integrated circuit (LSI) etc.
Electronic equipment comprises DVD, CD, MD and other reproducing device and television set, video tape recorder (VTR), power-supply device and inverter control device etc.
Description of drawings
Figure 1A relates to and is used to make the step of utilization according to the photoelectric coupled device of wire holder embodiment of the present invention, shows the wire holder that semiconductor element has been installed thereon.
Figure 1B relate to finished casting first and state after connecting rod blocks first under, make the step of utilization according to the photoelectric coupled device of wire holder embodiment of the present invention.
Fig. 1 C relates under the state after having finished transfer molding, makes the step of utilizing according to the photoelectric coupled device of wire holder embodiment of the present invention.
Fig. 1 D relates under the state of having finished after the secondary connecting rod blocks, and makes the step of utilizing according to the photoelectric coupled device of wire holder embodiment of the present invention.
Fig. 2 is the perspective view that shows the wire holder of present embodiment.
Fig. 3 A relates to and is used to make the step of utilization according to the different photoelectric coupled device of the wire holder of present embodiment, shows the wire holder that semiconductor element has been installed thereon.
Fig. 3 B relate to finished casting first and state after connecting rod blocks first under, make the step of utilization according to the different photoelectric coupled device of the wire holder of present embodiment.
Fig. 3 C relates under the state after having finished the transfer molding method, makes the step of utilizing according to the different photoelectric coupled device of the wire holder of present embodiment.
Fig. 3 D relates under the state of having finished after the secondary connecting rod blocks, and makes the step of utilizing according to the different photoelectric coupled device of the wire holder of present embodiment.
Fig. 4 A is the plane graph of the photoelectric coupled device of the conventional wire holder that is used for DIP and encapsulates.
Fig. 4 B shows the internal structure of the photoelectric coupled device of the conventional wire holder that is used for the DIP encapsulation.
Fig. 5 is a flow chart of describing the process of the photoelectric coupled device of making the conventional wire holder that is used for the DIP encapsulation.
Fig. 6 is for describing the flow chart of the process of making the conventional wire holder that is used for the DIP encapsulation.
Fig. 7 A is the plane graph of the photoelectric coupled device of the conventional wire holder that is used for SOP and encapsulates.
Fig. 7 B shows the internal structure of the photoelectric coupled device of the conventional wire holder that is used for the SOP encapsulation.
Fig. 8 is a flow chart of describing the process of the photoelectric coupled device of making the conventional wire holder that is used for the SOP encapsulation.
Embodiment
Following with reference to accompanying drawing, embodiments of the present invention is described in detail.
Figure 1A relates to Fig. 1 D and is used to make the step of utilization according to the photoelectric coupled device of wire holder embodiment of the present invention.Figure 1A shows the wire holder that semiconductor element has been installed.Figure 1B shows and has finished casting first and the state after connecting rod blocks first.Fig. 1 C shows the state after having finished transfer molding.Fig. 1 D shows at the state of having finished after the secondary connecting rod blocks.As shown in the figure, photoelectric coupled device 10D comprises light emitting side wire holder 11 and light-receiving side wire holder 21.
With reference to Figure 1A, light emitting side wire holder 11 has parallel first lead-in wire 12, parallel second lead-in wire 13, connect the connecting rod 14,15 of first lead-in wire 12 and be arranged in the head 16 of one end of first lead-in wire 12.With second lead-in wire 13 first lead-in wire 12 is coupled together seriatim.
According to the regulation of DIP encapsulation, the thickness of light emitting side wire holder 11 is 0.25mm.According to the regulation of SOP encapsulation, the spacing of first lead-in wire 12 is set to 1.27mm.According to the regulation of DIP encapsulation, the spacing of second lead-in wire 13 is set to 2.54mm.
Shown in Figure 1A, light-receiving side wire holder 21 has the first parallel lead-in wire 22, the second parallel lead-in wire 23, the head 26 that connects the connecting rod 24,25 of first lead-in wire 22 and be arranged in one end of first lead-in wire 22.With second lead-in wire 23 first lead-in wire 22 is coupled together seriatim.
Similar to light emitting side wire holder 11, according to the regulation of DIP encapsulation, the thickness of light-receiving side wire holder 21 is 0.25mm.According to the regulation of SOP encapsulation, the spacing of first lead-in wire 22 is set to 1.27mm.According to the regulation of DIP encapsulation, the spacing of second lead-in wire 23 is set to 2.54mm.
As shown in Figure 2, make first lead-in wire, 12 bendings of light emitting side wire holder 11 in advance.Shown in Figure 1A, in this light emitting side wire holder 11, photocell 17 is installed in and circuit wafer is welded in place on one the head 16 in first lead-in wire 12.By lead 18, also with photocell 17 wire bonds to another first the lead-in wire 12 on.In order to discharge stress, can utilize silicones that the photocell 17 of such welding is carried out pre cap.
Equally, as shown in Figure 2, make first lead-in wire, 22 bendings of light-receiving side wire holder 21 in advance.Shown in Figure 1A, in this light-receiving side wire holder 21, light receiving element 27 is installed in and chips welding to one the head 26 that is arranged in first lead-in wire 22.By lead 28, also with light receiving element 27 wire bonds to another first the lead-in wire 22 on.
Like this, photocell 17 is installed on the light emitting side wire holder 11, and light receiving element 27 is installed on the light-receiving side wire holder 21.Under the situation that the optical axis that makes photocell 17 with light receiving element 27 is in alignment with each other, with the fixed-site of light emitting side wire holder 11 and light-receiving side wire holder 21.In this case, as casting first, casting transparent epoxy resin 31 is so that the light transmission path between formation photocell 17 and the light receiving element 27.
After this, according to the mode shown in Figure 1B, the connecting rod 14 of light emitting side wire holder 11 and the connecting rod 24 of light-receiving side wire holder 21 are blocked.In addition, with transfer molding method casting shade epoxy resins, form the shell 32 shown in Fig. 1 C.
Usually, when carrying out these steps, by connecting rod 14,15 a plurality of first lead-in wires 12 of light emitting side wire holder 11 and a plurality of second lead-in wire 13 are connected, and a plurality of first lead-in wires 22 of light-receiving side wire holder 21 and a plurality of second lead-in wire 23 are connected by connecting rod 24,25.Therefore, in a course of processing, make a plurality of photoelectric coupled device 10D.
At last,, the connecting rod 15 of light emitting side wire holder 11 and the connecting rod 25 of light-receiving side wire holder 21 are blocked, photoelectric coupled device 10D is separated one by one according to the mode shown in Fig. 1 D.
Then, as before the commodity transportations, to each photoelectric coupled device 10D go between formations (forming second lead-in wire 13 of light emitting side wire holder 11 and second lead-in wire 23 of light-receiving side wire holder 21), voltage-withstand test (insulation between inspection photocell 17 and the light receiving element 27), electrical characteristics test (measuring various electrical characteristics), mark, visual examination and packing.For lead-in wire forms, form second lead-in wire 13,23 according to such situation, promptly they can be inserted the hole in the substrate.
Know expression as the photoelectric coupled device 10D among Fig. 1 D, second lead-in wire 13 of light emitting side wire holder 11 and second lead-in wire 23 of light-receiving side wire holder 21 be used to set up outside the connection.
As previously mentioned, according to the regulation of DIP encapsulation, the thickness of light emitting side wire holder 11 and light-receiving side wire holder 21 is 0.25mm.According to the regulation of DIP encapsulation, the spacing of second lead-in wire 13,23 is set to 2.54mm.
That is, the outside of this photoelectric coupled device 10D being connected lead-in wire makes to such an extent that meet the regulation of DIP encapsulation.Therefore, photoelectric coupled device 10D can be classified as the photoelectric coupled device of the wire holder that is used for the DIP encapsulation.
Fig. 3 A relates to the step of the different photoelectric coupled device that is used to make the wire holder that utilizes present embodiment to Fig. 3 D.Fig. 3 A shows the wire holder that semiconductor element has been installed.Fig. 3 B shows and has finished casting first and the state after connecting rod blocks first.Fig. 3 C shows the transfer molding state afterwards of having finished.Fig. 3 D shows the secondary connecting rod state after blocking of having finished.In Fig. 3 D, represent those effects that provide and those identical elements of effect of being mentioned in Fig. 1 D at Figure 1A at Fig. 3 A with identical reference number.
Photoelectric coupled device 10D in the image pattern 1 is the same, and photoelectric coupled device 10S comprises light emitting side wire holder 11, light-receiving side wire holder 21, photocell 17 and light receiving element 27 etc.In other words, the shared most of part of photoelectric coupled device 10D and photoelectric coupled device 10S.
However, just be used for by the transparent epoxy resin of casting first so that form the mould first of the light transmission path between photocell 17 and the light receiving element 27 and be used for the shade epoxy resins is carried out transfer molding so that form with regard to second mould of shell photoelectric coupled device 10S and photoelectric coupled device 10D needs mould separately.
With reference to the photoelectric coupled device 10S among Fig. 3 A, photocell 17 is installed on the light emitting side wire holder 11, and light receiving element 27 is installed on the light-receiving side wire holder 21.Under the situation that the optical axis that makes photocell 17 with light receiving element 27 is in alignment with each other, with the fixed-site of light emitting side wire holder 11 and light-receiving side wire holder 21.In this case, as casting first, casting transparent epoxy resin 41 is so that the light path between formation photocell 17 and the light receiving element 27.
During casting first, utilizing first, mould pushes first lead-in wire 12 of light emitting side wire holder 11 and first lead-in wire 22 of light-receiving side wire holder 21.As a result, with being that the thickness of first lead-in wire 12,22 of 0.25mm is reduced to about 0.15 to 0.20mm originally, so that meet the regulation of SOP encapsulation according to DIP encapsulation specific thickness.
After this, according to the mode shown in Fig. 3 B, the connecting rod 14 of light emitting side wire holder 11 and the connecting rod 24 of light-receiving side wire holder 21 are blocked.In addition, with transfer molding method casting shade epoxy resins, form the shell 42 shown in Fig. 3 C.
Usually, when carrying out these steps, by connecting rod 14,15 a plurality of first lead-in wires 12 of light emitting side wire holder 11 and a plurality of second lead-in wire 13 are connected, and a plurality of first lead-in wires 22 of light-receiving side wire holder 21 and a plurality of second lead-in wire 23 are connected by connecting rod 24,25.Therefore, in a course of processing, make a plurality of photoelectric coupled device 10S.
At last,, the connecting rod 15 of light emitting side wire holder 11 and the connecting rod 25 of light-receiving side wire holder 21 are blocked, photoelectric coupled device 10S is separated successively according to the mode shown in Fig. 3 D.Simultaneously, second lead-in wire 13 of light emitting side wire holder 11 and second lead-in wire 23 of light-receiving side wire holder 21 are blocked.
Then, as before the commodity transportations, to each photoelectric coupled device 10S go between formations (forming first lead-in wire 12 of light emitting side wire holder 11 and first lead-in wire 22 of light-receiving side wire holder 21), voltage-withstand test (insulation between inspection photocell 17 and the light receiving element 27), electrical characteristics test (measuring various electrical characteristics), mark, visual examination and packing.For lead-in wire forms, form first lead-in wire 12,22 according to such situation, promptly they can be installed on the substrate surface.
Know expression as the photoelectric coupled device 10S among Fig. 3 D, first lead-in wire 12 of light emitting side wire holder 11 and first lead-in wire 22 of light-receiving side wire holder 21 be used to set up outside the connection.
As previously mentioned, according to the regulation of SOP encapsulation, the spacing of first lead-in wire 12 of light emitting side wire holder 11 and first lead-in wire 22 of light-receiving side wire holder 21 is set to 1.27mm.During carrying out first casting step,, make the thickness of first lead-in wire 12,22 be reduced to about 0.15 to 0.20mm according to the regulation of SOP encapsulation.
That is, the outside of this photoelectric coupled device 10S being connected lead-in wire makes to such an extent that meet the regulation of SOP encapsulation.Therefore, photoelectric coupled device 10S can be classified as the photoelectric coupled device of the wire holder that is used for the SOP encapsulation.
Under the situation of the wire holder that uses present embodiment, can be by allowing second lead-in wire 13,23 from shell, stretch out the wire holder that obtains being used for the DIP encapsulation, perhaps by second lead-in wire 13,23 being blocked and allowing first lead-in wire 12,22 from shell, stretch out the wire holder that obtains being used for the SOP encapsulation.Therefore, for conventionally by different wire holder parts wire holder of making that is used for the DIP encapsulation and the encapsulation that is used for the SOP wire holder, can make by a kind of common leads seat part.Can also reduce material cost and material model and simplify part control.
In addition, by Figure 1A-1D and Fig. 3 A-3D are compared also disclosed DIP encapsulation and SOP encapsulate can a shared production line advantage.Therefore, two types photoelectric coupled device for being distinguished by lead spacing can change the production schedule at an easy rate.In addition, can realize stable supply and minimizing cost of investment, and cheap photoelectric coupled device can be provided photoelectric coupled device.
Should be appreciated that, the invention is not restricted to the foregoing description, but can make amendment in every way.For example, in order to reduce the thickness of first in the foregoing description lead-in wire 12,22, during carrying out first casting step, go between to first with mould first and to push.On the contrary, can utilize other known method, make first lead-in wire 12,22 become thinner in advance.In addition, in the process of making photoelectric coupled device 10D and photoelectric coupled device 10S, can shared mould first and secondary mould.
Not only can be applied to photoelectric coupled device according to wire holder of the present invention, and can be applied to other semiconductor device, as integrated circuit and large scale integrated circuit etc.The present invention comprises that also those have comprised the electronic equipment of the semiconductor device that uses this wire holder.As electronic equipment, that can mention has DVD, CD, MD and other reproducing device and television set, video tape recorder, power-supply device and an inverter control device etc.
Under the situation that does not break away from its spirit or fundamental characteristics, can implement the present invention with other particular form.Therefore, in all its bearings, the foregoing description should be interpreted as illustratively and nonrestrictive, scope of the present invention be described by claims rather than by above description.Therefore, belonging to the implication of equivalent of claim and the institute in the scope changes and is included in the claim.
The application is the patent application of 2002-333717 based on the sequence number of submitting in Japan, is reference with its content quotation here.Equally, here all the elements of the document of being quoted are all included in the mode of list of references.

Claims (8)

1. wire holder that is used for semiconductor device, it is characterized in that, wherein, in configured in parallel a plurality of first the lead-in wire in, configured in parallel a plurality of second the lead-in wire, the spacing of described each first lead-in wire is less than the spacing of described each second lead-in wire, and an end of an end of described each first lead-in wire and described each second lead-in wire joins end to end
The spacing of described each first lead-in wire is corresponding to the terminal pitch of little gabarit encapsulation SOP, and the spacing of described each second lead-in wire is corresponding to the terminal pitch of dual in-line package DIP.
2. wire holder as claimed in claim 1 is characterized in that,
Wherein, the thickness of a kind of lead-in wire in described each first lead-in wire and described each second lead-in wire is reduced.
3. a method of making the semiconductor device that uses wire holder is characterized in that,
This method comprises the step of semiconductor element mounting on wire holder as claimed in claim 1, and this semiconductor element is encapsulated in step in the shell,
Wherein, the size of the described shell that is used to encapsulate is to be provided with like this, that is, a kind of lead-in wire in described each first lead-in wire and described each second lead-in wire is stretched out from described shell.
4. the method that is used to make the semiconductor device that uses wire holder as claimed in claim 3,
Wherein, the mould that is used for cast envelope pushes and their thickness is reduced described each first lead-in wire and described respectively a kind of lead-in wire of second lead-in wire at least.
5. as claim 3 or the 4 described methods that are used to make the semiconductor device that uses wire holder, it is characterized in that,
Wherein, the size of the shell that is used to encapsulate is to be provided with like this, that is, the part in described each second lead-in wire and described each first lead-in wire is stretched out from described shell.
6. the method that is used to make the semiconductor device that uses wire holder as claimed in claim 5 is characterized in that,
Also comprise the step that described second lead-in wire is blocked from described first lead-in wire.
7. a semiconductor device uses wire holder as claimed in claim 1.
8. an electronic equipment uses semiconductor device as claimed in claim 7.
CNB2003101029672A 2002-11-18 2003-10-31 Leadframe for semiconductor device, method for manufacturing semiconductor device using the same, semiconductor device using the same, and electronic equipment Expired - Fee Related CN1332443C (en)

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