CN1341966A - Light-emitting device of high-power light-emitting diode - Google Patents
Light-emitting device of high-power light-emitting diode Download PDFInfo
- Publication number
- CN1341966A CN1341966A CN01135392A CN01135392A CN1341966A CN 1341966 A CN1341966 A CN 1341966A CN 01135392 A CN01135392 A CN 01135392A CN 01135392 A CN01135392 A CN 01135392A CN 1341966 A CN1341966 A CN 1341966A
- Authority
- CN
- China
- Prior art keywords
- light
- emitting diode
- radiator
- reflector
- backlight unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
- F21V3/06—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material
- F21V3/08—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material the material comprising photoluminescent substances
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/233—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating a spot light distribution, e.g. for substitution of reflector lamps
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
- F21V3/10—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by coatings
- F21V3/12—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by coatings the coatings comprising photoluminescent substances
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
The invention discloses a luminescence set of high-power light emitting diode. It consists of at least two chips of light emitting diode, a transparent container, at least a driving circuit and an electricity connector. The chips are installed on at least one reflector that it installed on a base plate and a radiator. The transparent container is installed above the radiator. The inner wall of the transparent container may be coated with light conversion material that convert the light emitted from the chips of light emitting diode into the light with needed color. The electricity connector is connected to outer power source and its output is connected to the chip of the light emitting diode. The invented luminescence set can be used to make bulb of light emitting diode with high power, high efficiency or light source and display in plate type.
Description
Technical field
The present invention relates to a kind of high power led lighting and display unit, be used for illumination and information and show.
Background technology
The light-emitting diode of prior art all is installed in the reverberation bowl with 1 or 2 chip, and the back is sealed into an elementary cell with the light penetrating ring epoxy resins, this kind structure chip cooling difficulty, and the chip packing density is low, is difficult to make powerful LED device.Light-emitting diode is a kind of to the very sensitive device of temperature, and when input power increased, chip temperature rose and will cause luminous efficiency obviously to descend.For large-power light-emitting diodes, how to improve heat radiation, under the situation of particularly big electric current and high chip packing density, heat radiation is the problem of a key especially.
Summary of the invention
The objective of the invention is to overcome the deficiency of above-mentioned existence, and provide a kind of large-power light-emitting diodes luminescent device, it is achieved by the following technical solution, it includes the light-emitting diode chip for backlight unit that is installed on the reflector, on the chip photic zone can be arranged, and described light-emitting diode chip for backlight unit has two at least, and be installed at least one reflector, reflector is installed on the substrate, and substrate is installed on the radiator, is provided with heat-conducting glue between substrate and the radiator.
The serve as reasons metal of high heat conductance such as silver, copper, aluminium, alloy or silver-plated metal of the described reflector that light-emitting diode chip for backlight unit is installed is made, this reflector is installed on the substrate and radiator of the high heat conductance that constitutes as pottery, glass or circuit board etc., is provided with heat-conducting glue between reflector, substrate and the radiator.
It also includes the light-emitting diode chip for backlight unit that is installed on the reflector, on the chip photic zone can be arranged, described light-emitting diode chip for backlight unit has two at least, and be installed at least one reflector, reflector is installed on the radiator, be provided with heat-conducting glue between reflector and the radiator, the heat conduction glue-line is interior just like insulation columns such as little beades.
Aforesaid reflector is provided with darker reverberation bowl, and its degree of depth is greater than the radius of reverberation bowl bore, the shape of reverberation bowl can be designed to help light output as shapes such as parabolas.
Described light-emitting device of high-power light-emitting diode is characterized in that serial or parallel connection, connection in series-parallel connect, and be installed on plane or the camber reflection body described light-emitting diode chip for backlight unit as required.
Described light-emitting device of high-power light-emitting diode is characterized in that on described light-emitting diode chip for backlight unit and the reflector light-converting material being arranged.
A kind of large-power light-emitting diodes bulb, it comprises a foregoing LED illuminating device, there is cell-shell in described light-emitting diode chip for backlight unit the place ahead, this cell-shell is fixed on the radiator, radiator be designed to and favourable heat radiation similar to bulb as shapes such as blade, through hole or other geometries, an insulation crust is used to connect radiator and bottom lamp holder, in lamp holder and the shell driver is arranged, and its input links to each other with lamp holder through lead-in wire; Its output links to each other with light-emitting diode chip for backlight unit through lead-in wire.
On the inwall of described cell-shell light-converting material can be arranged, but and matcoveredn.
Described cell-shell is the printing opacity cell-shell, is designed to as difformities such as sphere, mushroom-shapeds.
Described cell-shell can be an open blisters and the reflector can be arranged, and substrate is provided with at least one through hole, but makes air via through holes and radiator circulation.
Also insulation column can be arranged in the described heat-conducting glue, as little bead, at this moment reflector can directly be installed on the radiator.
A kind of large-power light-emitting diodes display unit, it comprises a foregoing LED illuminating device, before the described light-emitting diode chip for backlight unit cell-shell can be arranged, and this cell-shell is fixed on the radiator, and radiator is installed on the substrate of display system.
Light-emitting device of high-power light-emitting diode of the present invention is compared with the light-emitting diode of prior art, has big, the efficient advantages of higher of power, can be used for making large-power light-emitting diodes lamp and display.
Description of drawings
Fig. 1 is the light-emitting diode structure schematic diagram of prior art.
Fig. 2 is the part section structural representation of an embodiment of light-emitting device of high-power light-emitting diode of the present invention.
Fig. 3 is the partial structurtes schematic diagram of another embodiment of light-emitting device of high-power light-emitting diode of the present invention.
Fig. 4 is the equivalent circuit diagram of Fig. 3.
Fig. 5 is the A-A cross-sectional view of Fig. 3.
Fig. 6 is the partial structurtes schematic diagram of another embodiment of light-emitting device of high-power light-emitting diode of the present invention.
Fig. 7 is the cross-sectional view of an embodiment of large-power light-emitting diodes bulb of the present invention.
Fig. 8 is the cross-sectional view of another embodiment of large-power light-emitting diodes bulb of the present invention.
The specific embodiment
The present invention will be described in detail below in conjunction with accompanying drawing: Figure 1 shows that a light emitting diode The example of chip 1. Chip is installed in the reverberation bowl 2, and chip is through connecting line 4 and anode tap 3 link to each other, and pass through the lead-out wire 6 outer companies of light-emitting diode chip for backlight unit, also have the light penetrating ring epoxy resins on the chip Layer 5.
In this kind structure, chip and reverberation bowl are all surrounded by epoxy sealing, heat radiation difficulty, chip temperature Degree raises easily and causes luminous efficiency to descend, and operating current is generally limited to below the 20mA, and the chip peace Dress density is low, is difficult to make powerful LED illuminating device.
Fig. 2 is the part section knot of an embodiment of light-emitting device of high-power light-emitting diode of the present invention Structure signal Figure 101. Figure 2 shows that the example of the light-emitting device of high-power light-emitting diode of a string mutual series connection Son. Light-emitting diode chip for backlight unit 1 is arranged among the figure, and it is fixed on the reflector 7, for example in the metallic reflection bowl, Described reverberation bowl is fixed on the substrate 8. Substrate 8 and a radiator 9 close contacts have heat-conducting glue therebetween 10, between reverberation bowl and the radiator 9 gap is arranged, heat-conducting glue 10 is wherein also arranged, be used for insulating and leading Heat. Radiator 9 can be a flat board or the plate of the shape that is conducive to dispel the heat of a plurality of grooves is arranged. Have on the chip Light fluid sealant 11, for example epoxy resin. Described insulated substrate 7 is for example by pottery, glass or circuit board Make etc. the material that thermal conductivity is high. Described radiator is by the high material of thermal conductivity for example aluminium, silver, copper or close Gold etc. are made. For preventing that insulated substrate 8 is because of the coefficient of expansion and radiator 9 different fractures, heat-conducting glue 10 Can be soft glue. The arrangement of chip 1 is series, parallel or connection in series-parallel on demand. Insulated substrate 8 and diffusing Hot device 9 can be the plane or curved surface. For avoiding printing opacity fluid sealant 11 to rupture because of thermal expansion, institute State printing opacity fluid sealant 11 and can be divided into some fritters.
The described structure of Fig. 2, thermal resistance is very little between chip 1 and the radiator 9, the heat that chip is produced Amount dissipates very soon; The packing density of chip can be very high simultaneously; Thereby can be made into high-power, high efficiency The optical diode light-emitting device.
Device still can work the arrangement of chip when guaranteeing indivedual damage is arranged in the light-emitting diode chip for backlight unit Can will connect after several chip parallel connections earlier, as shown in Figure 3. 1a, 1b, 1c... and 1A among the figure, 1B, 1C... be chip, shown in the figure connecting line 4a, 4b are arranged in addition, conduction reflection substrate 12. Described chip can Be installed on the reflector of plane or curved surface.
Fig. 4 is the equivalent circuit diagram of Fig. 3, wherein 1a, 1b, 1c...... parallel connection, 1A, 1B, 1C...... Parallel connection, the chip of some groups of parallel connections is connected mutually.
Fig. 5 is the A-A cross-sectional view 102 of Fig. 3, wherein chip array 1a, 1b, 1c..., Conduction reflection substrate 12, heat sink 9 has thin insulating heat-conducting layer 13 between the two, such as mica, artificial Mica etc.; Other has heat conduction glue-line 10, on the chip printing opacity fluid sealant 11 can be arranged. Chip and reflection substrate 12 On light-converting material 15 can be arranged, the light that is sent by chip can be transformed into the light of required look.
Above Fig. 1 and two enforcements that Figure 5 shows that the structure of LED illuminating device of the present invention The schematic diagram of example. They can be used for making plane or curved surface light source, also can be used for making the illumination of bulb-type Lamp or display unit.
Also insulation column can be arranged in the heat conduction glue-line 10 among Fig. 5, such as little bead, shown among Fig. 6 24. At this moment reflector can directly be installed on the radiator, and without thermal insulation layer 13.
For obtaining the emergent light 25 that efficient is higher, focus on, the reverberation bowl 12a on the reflector can be darker, example Such as the radius of the degree of depth greater than the reverberation bowl bore, as shown in Figure 6; The shape of reverberation bowl 12a can be designed to Be beneficial to the shape of light output, such as parabola etc. Identical among other digital meaning and Fig. 5 among Fig. 6.
Fig. 7 is the structural profile signal of an embodiment of high power LED bulb of the present invention Figure. Wherein lumination of light emitting diode can be used the knot of Fig. 2 (101), Fig. 5 (102) or Fig. 6 (103) Structure is the example with structure shown in Figure 5 shown in Fig. 6. Digital 1a, 1b...... among the figure, 9,10,11, 12, identical with Fig. 5 with the meaning of 13 representatives; Wherein radiator 9 be designed to similar to bulb also The shape of favourable heat radiation is such as blade, through hole or other geometries. Have on chip array 1a, the 1b...... One printing opacity cell-shell 14 is made by glass or plastics, is fixed on the radiator 9, on its inwall light can be arranged Transition material 15 can be transformed into the light that is sent by chip the light of required look. Can on the light-converting material 15 Matcoveredn 16 is with the protection light-converting material. Lamp holder 17 is arranged among the figure, and insulation crust 18 is by plastics or pottery Porcelain is made, and is used for connecting radiator and lamp holder. Drive circuit 19, its input is through going between 20 and lamp holder 17 link to each other; Its output 21 links to each other with light-emitting diode chip for backlight unit through going between, when external power when lamp holder is connected, The output of driver can be lighted light-emitting diode chip for backlight unit, makes bulb luminous.
Also can be without light-converting material on cell-shell 14 inwalls, cell-shell is transparent or milky.
The shape of whole lamp shown in Figure 7 can be designed to other geometry, such as sphere, mushroom-shaped etc. Cell-shell 14 also can be opening, on its inwall reflecting layer 22 can be arranged, as shown in Figure 8. Institute among Fig. 7 Be shown the example with structure shown in Figure 6. Identical among other digital meanings and Fig. 5 among Fig. 7. At this moment loose On the hot device 9 He on the reflection substrate 12 at least one through hole 23 can be arranged, air is circulated through radiator, with Increase radiating effect.
Fig. 6 and device shown in Figure 7 also can be used for making display unit, at this moment lamp holder 17 and shell 18 Can, directly radiator 9 being installed on the display system substrate, radiator 9 also can be to show system System substrate itself.
Each embodiment that the scope of protection of present invention is not limited to introduce herein, the know-how that relates to Be that the general personnel of this specialty are familiar with, therefore as long as understand content of the present invention, can do various forms Conversion and replacement.
Claims (11)
1, a kind of light-emitting device of high-power light-emitting diode, it includes the light-emitting diode chip for backlight unit that is installed on the reflector, on the chip photic zone can be arranged, it is characterized in that described light-emitting diode chip for backlight unit (1) has two at least, and be installed at least one reflector (2), reflector is installed on the substrate (8,13), and substrate is installed on the radiator (9), is provided with heat-conducting glue (10) between substrate and the radiator.
2, light-emitting device of high-power light-emitting diode as claimed in claim 1, the serve as reasons metal of high heat conductance such as silver, copper, aluminium, alloy or silver-plated metal of the reflector that it is characterized in that being equipped with light-emitting diode chip for backlight unit is made, this reflector is installed on the substrate (8,13) and radiator (9) of the high heat conductance that constitutes as pottery, glass, circuit board, mica, artificial mica etc., is provided with heat-conducting glue (10) between reflector, substrate and the radiator.
3, a kind of light-emitting device of high-power light-emitting diode, it includes the light-emitting diode chip for backlight unit that is installed on the reflector, on the chip photic zone can be arranged, it is characterized in that described light-emitting diode chip for backlight unit has two at least, and be installed at least one reflector, reflector is installed on the radiator (9), is provided with heat-conducting glue (10) between reflector and the radiator, the interior insulation column (24) just like little bead of heat-conducting glue (10) layer.
4, as claim 1 and 3 described light-emitting device of high-power light-emitting diode, it is characterized in that making on the described reflector a darker reverberation bowl (12a), its degree of depth is greater than the radius of reverberation bowl bore, the shape of reverberation bowl can be designed to help light output as shapes such as parabolas.
5,, it is characterized in that described light-emitting diode chip for backlight unit series, parallel or connection in series-parallel connection on demand, and be installed on plane or the camber reflection body as claim 1 and 3 described light-emitting device of high-power light-emitting diode.
6,, it is characterized in that on described light-emitting diode chip for backlight unit (1,1a, 1b......) and the reflector (7,12,12a) light-converting material (15) being arranged as claim 1 and 3 described light-emitting device of high-power light-emitting diode.
7, a kind of large-power light-emitting diodes bulb, it comprises a foregoing LED illuminating device (101,102,103), it is characterized in that there is cell-shell (14) in light-emitting diode chip for backlight unit the place ahead, this cell-shell (14) is fixed on the radiator (9), radiator (9) be designed to and favourable heat radiation similar to bulb as shapes such as blade, through hole or other geometries; An insulation crust (18) is used to connect radiator (9) and bottom lamp holder (17), in lamp holder (17) and the shell (18) driver (19) is arranged, and its input links to each other with lamp holder through lead-in wire (20); Its output links to each other with light-emitting diode chip for backlight unit through lead-in wire (22).
8, large-power light-emitting diodes bulb as claimed in claim 7 or display unit is characterized in that on the inwall of described cell-shell (14) light-converting material (15) being arranged, but and matcoveredn (16).
9,, it is characterized in that described cell-shell (14) is the printing opacity cell-shell, and be designed to as difformities such as sphere, mushroom-shapeds as claim 7 or 8 described large-power light-emitting diodes bulb or display units.
10, large-power light-emitting diodes bulb as claimed in claim 7, it is characterized in that described cell-shell (14) can be an open blisters and reflector (21) can be arranged, substrate (12,13) radiators (9) are provided with at least one through hole (23), but air via through holes (23) and radiator (9) circulation.
11, a kind of large-power light-emitting diodes display unit, it comprises a foregoing LED illuminating device (101,102,103), it is characterized in that there is cell-shell (14) in light-emitting diode chip for backlight unit the place ahead, this cell-shell (14) is fixed on the radiator (9), and radiator (9) is installed on the substrate of display system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011353929A CN1286175C (en) | 2001-09-29 | 2001-09-29 | Light-emitting device of high-power light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011353929A CN1286175C (en) | 2001-09-29 | 2001-09-29 | Light-emitting device of high-power light-emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1341966A true CN1341966A (en) | 2002-03-27 |
| CN1286175C CN1286175C (en) | 2006-11-22 |
Family
ID=4673138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011353929A Expired - Fee Related CN1286175C (en) | 2001-09-29 | 2001-09-29 | Light-emitting device of high-power light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1286175C (en) |
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005029594A1 (en) * | 2003-09-22 | 2005-03-31 | Fujian Joinluck Electronic Enterprise Co., Ltd. | A structure of light emitting diode |
| WO2005067064A1 (en) * | 2003-11-25 | 2005-07-21 | Shichao Ge | Light emitting diode and light emitting diode lamp |
| WO2006108339A1 (en) * | 2005-04-15 | 2006-10-19 | Nanjing Handson Co., Ltd | Led white light source based on metal wiring board |
| CN1300633C (en) * | 2004-02-17 | 2007-02-14 | 友达光电股份有限公司 | Backlight module and heat sink structure |
| CN100379034C (en) * | 2003-03-10 | 2008-04-02 | 高陆股份有限公司 | LED module with high-efficient radiation |
| CN100409440C (en) * | 2005-08-08 | 2008-08-06 | 佰鸿工业股份有限公司 | Matrix type LED and manufacturing method thereof |
| CN100435336C (en) * | 2004-10-18 | 2008-11-19 | 夏普株式会社 | Semiconductor light emitting device, backlight device for liquid crystal display |
| US7547124B2 (en) | 2006-11-17 | 2009-06-16 | Foxconn Technology Co., Ltd. | LED lamp cooling apparatus with pulsating heat pipe |
| WO2009082865A1 (en) * | 2007-12-30 | 2009-07-09 | Foshan Nationstar Optoelectronics Limited Liability Company | Led plane light source for universial illumination |
| CN100539219C (en) * | 2005-04-28 | 2009-09-09 | 皇家飞利浦电子股份有限公司 | Comprise the light source that is arranged on the LED in the recess |
| CN1605790B (en) * | 2003-10-01 | 2011-01-05 | 恩纳特隆公司 | LED light apparatus and method therefor |
| CN101949502A (en) * | 2010-10-07 | 2011-01-19 | 苏州盟泰励宝光电有限公司 | LED reflective lamp |
| CN101963315A (en) * | 2010-10-14 | 2011-02-02 | 友达光电股份有限公司 | Light source module and liquid crystal display |
| CN102032475A (en) * | 2009-08-23 | 2011-04-27 | 彭云滔 | Combined type high-power LED lamp |
| US7948001B2 (en) | 2005-09-20 | 2011-05-24 | Panasonic Electric Works, Co., Ltd. | LED lighting fixture |
| CN102299235A (en) * | 2011-06-13 | 2011-12-28 | 协鑫光电科技（张家港）有限公司 | LED (light-emitting diode) with high luminous efficiency |
| US8444299B2 (en) | 2007-09-25 | 2013-05-21 | Enertron, Inc. | Dimmable LED bulb with heatsink having perforated ridges |
| CN102437266B (en) * | 2010-09-29 | 2016-05-11 | 王树生 | LED encapsulating structure |
| US9470372B2 (en) | 2008-11-26 | 2016-10-18 | Deloren E. Anderson | High intensity replaceable light emitting diode module and array |
| US11284491B2 (en) | 2011-12-02 | 2022-03-22 | Lynk Labs, Inc. | Color temperature controlled and low THD LED lighting devices and systems and methods of driving the same |
| US11297705B2 (en) | 2007-10-06 | 2022-04-05 | Lynk Labs, Inc. | Multi-voltage and multi-brightness LED lighting devices and methods of using same |
| US11317495B2 (en) | 2007-10-06 | 2022-04-26 | Lynk Labs, Inc. | LED circuits and assemblies |
| US11528792B2 (en) | 2004-02-25 | 2022-12-13 | Lynk Labs, Inc. | High frequency multi-voltage and multi-brightness LED lighting devices |
| US11566759B2 (en) | 2017-08-31 | 2023-01-31 | Lynk Labs, Inc. | LED lighting system and installation methods |
| US11638336B2 (en) | 2004-02-25 | 2023-04-25 | Lynk Labs, Inc. | AC light emitting diode and AC LED drive methods and apparatus |
| US11678420B2 (en) | 2004-02-25 | 2023-06-13 | Lynk Labs, Inc. | LED lighting system |
| US11953167B2 (en) | 2019-04-08 | 2024-04-09 | Lynk Labs, Inc. | Devices and systems having AC LED circuits and methods of driving the same |
-
2001
- 2001-09-29 CN CNB011353929A patent/CN1286175C/en not_active Expired - Fee Related
Cited By (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100379034C (en) * | 2003-03-10 | 2008-04-02 | 高陆股份有限公司 | LED module with high-efficient radiation |
| WO2005029594A1 (en) * | 2003-09-22 | 2005-03-31 | Fujian Joinluck Electronic Enterprise Co., Ltd. | A structure of light emitting diode |
| CN1605790B (en) * | 2003-10-01 | 2011-01-05 | 恩纳特隆公司 | LED light apparatus and method therefor |
| WO2005067064A1 (en) * | 2003-11-25 | 2005-07-21 | Shichao Ge | Light emitting diode and light emitting diode lamp |
| CN1300633C (en) * | 2004-02-17 | 2007-02-14 | 友达光电股份有限公司 | Backlight module and heat sink structure |
| US11528792B2 (en) | 2004-02-25 | 2022-12-13 | Lynk Labs, Inc. | High frequency multi-voltage and multi-brightness LED lighting devices |
| US11638336B2 (en) | 2004-02-25 | 2023-04-25 | Lynk Labs, Inc. | AC light emitting diode and AC LED drive methods and apparatus |
| US11678420B2 (en) | 2004-02-25 | 2023-06-13 | Lynk Labs, Inc. | LED lighting system |
| CN100435336C (en) * | 2004-10-18 | 2008-11-19 | 夏普株式会社 | Semiconductor light emitting device, backlight device for liquid crystal display |
| US7977689B2 (en) | 2004-10-18 | 2011-07-12 | Sharp Kabushiki Kaisha | Backlight device for liquid crystal display including a plurality of light emitting diodes within their own concaves aligned in a straight line within a larger concave |
| US7579628B2 (en) | 2004-10-18 | 2009-08-25 | Sharp Kabushiki Kaisha | Backlight device for liquid crystal display including a plurality of light emitting diodes within their own concaves aligned in a straight line within a larger concave |
| WO2006108339A1 (en) * | 2005-04-15 | 2006-10-19 | Nanjing Handson Co., Ltd | Led white light source based on metal wiring board |
| CN100539219C (en) * | 2005-04-28 | 2009-09-09 | 皇家飞利浦电子股份有限公司 | Comprise the light source that is arranged on the LED in the recess |
| CN100409440C (en) * | 2005-08-08 | 2008-08-06 | 佰鸿工业股份有限公司 | Matrix type LED and manufacturing method thereof |
| US7948001B2 (en) | 2005-09-20 | 2011-05-24 | Panasonic Electric Works, Co., Ltd. | LED lighting fixture |
| CN100572908C (en) * | 2006-11-17 | 2009-12-23 | 富准精密工业(深圳)有限公司 | Led lamp |
| US7547124B2 (en) | 2006-11-17 | 2009-06-16 | Foxconn Technology Co., Ltd. | LED lamp cooling apparatus with pulsating heat pipe |
| US8444299B2 (en) | 2007-09-25 | 2013-05-21 | Enertron, Inc. | Dimmable LED bulb with heatsink having perforated ridges |
| US11729884B2 (en) | 2007-10-06 | 2023-08-15 | Lynk Labs, Inc. | LED circuits and assemblies |
| US11297705B2 (en) | 2007-10-06 | 2022-04-05 | Lynk Labs, Inc. | Multi-voltage and multi-brightness LED lighting devices and methods of using same |
| US11317495B2 (en) | 2007-10-06 | 2022-04-26 | Lynk Labs, Inc. | LED circuits and assemblies |
| WO2009082865A1 (en) * | 2007-12-30 | 2009-07-09 | Foshan Nationstar Optoelectronics Limited Liability Company | Led plane light source for universial illumination |
| US10925139B2 (en) | 2008-11-26 | 2021-02-16 | Yjb Led, Inc. | High intensity replaceable light emitting diode module and array |
| US11178744B2 (en) | 2008-11-26 | 2021-11-16 | Yjb Led, Inc. | High intensity replaceable light emitting diode module and array |
| US9470372B2 (en) | 2008-11-26 | 2016-10-18 | Deloren E. Anderson | High intensity replaceable light emitting diode module and array |
| US11924943B2 (en) | 2008-11-26 | 2024-03-05 | Yjb Led, Inc. | High intensity replaceable light emitting diode module and array |
| CN102032475A (en) * | 2009-08-23 | 2011-04-27 | 彭云滔 | Combined type high-power LED lamp |
| CN102437266B (en) * | 2010-09-29 | 2016-05-11 | 王树生 | LED encapsulating structure |
| CN101949502A (en) * | 2010-10-07 | 2011-01-19 | 苏州盟泰励宝光电有限公司 | LED reflective lamp |
| CN101963315A (en) * | 2010-10-14 | 2011-02-02 | 友达光电股份有限公司 | Light source module and liquid crystal display |
| CN102299235A (en) * | 2011-06-13 | 2011-12-28 | 协鑫光电科技（张家港）有限公司 | LED (light-emitting diode) with high luminous efficiency |
| US11284491B2 (en) | 2011-12-02 | 2022-03-22 | Lynk Labs, Inc. | Color temperature controlled and low THD LED lighting devices and systems and methods of driving the same |
| US11566759B2 (en) | 2017-08-31 | 2023-01-31 | Lynk Labs, Inc. | LED lighting system and installation methods |
| US11953167B2 (en) | 2019-04-08 | 2024-04-09 | Lynk Labs, Inc. | Devices and systems having AC LED circuits and methods of driving the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1286175C (en) | 2006-11-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1341966A (en) | Light-emitting device of high-power light-emitting diode | |
| KR100991829B1 (en) | A LED and LED lamp | |
| US8227962B1 (en) | LED light bulb having an LED light engine with illuminated curved surfaces | |
| CN101454910B (en) | Semiconductor light source for illuminating a physical space including a 3-dimensional lead frame | |
| CN201359210Y (en) | Lens integrated LED light source module | |
| CN1869504A (en) | LED cluster bulb | |
| CN1807971A (en) | High-power LED high-brightness lighting lamp | |
| CN1359137A (en) | Super heat-conductive pipe lamp | |
| CN2821749Y (en) | Luminous display panel | |
| CN2872073Y (en) | High-brightness and large-power LED light | |
| WO2020088966A1 (en) | Led filament arrangement with heat sink structure | |
| CN201344394Y (en) | A high-power white light LED module | |
| CN201180947Y (en) | LED combination structure | |
| CN202561471U (en) | A lighting device and a lighting apparatus | |
| CN101082414B (en) | Luminous diode lighting apparatus with high power and high heat sinking efficiency | |
| CN2517112Y (en) | High power light-emitting diode | |
| KR101032127B1 (en) | Led working lamp with heat sink of polygonal structure | |
| CN2540685Y (en) | High-efficient high power light-emitting diode | |
| CN101387391A (en) | LED lamp | |
| CN202501245U (en) | Lighting device and lighting appliance | |
| CN201237097Y (en) | LED luminous panel | |
| CN102437266A (en) | LED (Light-Emitting Diode) packaging structure | |
| CN1893122A (en) | Led Lighting light-source based on metal aluminium-base material | |
| CN2544416Y (en) | Large power LCD | |
| CN201851969U (en) | Light emitting diode (LED) flat panel surface light source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| ASS | Succession or assignment of patent right |
Owner name: HANGZHOU FUYANG NOVELTY ELECTRONICS CO., LTD. Free format text: FORMER OWNER: GE SHICHAO Effective date: 20040106 |
|
| C10 | Entry into substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20040106 Address after: Hangzhou City, Zhejiang province 311404 Fuyang New Economic Development Zone Applicant after: Hangzhou Fuyang Novel Electronics Co., Ltd. Address before: Two road 310012 Zhejiang city in Hangzhou Province, the Qiuzhi Lane room 2-203 Applicant before: Ge Shichao |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: ZHEJIANG MANELUX LIGHTING CO., LTD. Free format text: FORMER NAME: HANGZHOU FUYANG XINYING ELECTRONICS CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: Hangzhou City, Zhejiang province Fuyang New Economic Development Zone Patentee after: Zhejiang Manelux Lighting Co., Ltd. Address before: Hangzhou City, Zhejiang province Fuyang New Economic Development Zone Patentee before: Hangzhou Fuyang Novel Electronics Co., Ltd. |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061122 Termination date: 20110929 |