CN1404183A - 高频线路变换器、部件、组件和通信装置 - Google Patents
高频线路变换器、部件、组件和通信装置 Download PDFInfo
- Publication number
- CN1404183A CN1404183A CN02131958A CN02131958A CN1404183A CN 1404183 A CN1404183 A CN 1404183A CN 02131958 A CN02131958 A CN 02131958A CN 02131958 A CN02131958 A CN 02131958A CN 1404183 A CN1404183 A CN 1404183A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- line
- dielectric substrates
- electrode
- grounding electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004891 communication Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 230000005540 biological transmission Effects 0.000 claims abstract description 35
- 239000007767 bonding agent Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- UUDAMDVQRQNNHZ-UHFFFAOYSA-N (S)-AMPA Chemical compound CC=1ONC(=O)C=1CC(N)C(O)=O UUDAMDVQRQNNHZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced with unbalanced lines or devices
- H01P5/107—Hollow-waveguide/strip-line transitions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01021—Scandium [Sc]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Abstract
本发明涉及高频线路变换器、部件、组件和通信装置。为了低损耗进行电介质基片上形成的传输线路与波导管的信号变换,在厚度为1/4信号波长λ的电介质基片(1)的一个面形成接地电极(3)和端部通过导线(8)连接高频元件(7)的带状线路(2),在与波导管相对的另一面形成接地电极(4),在与带状线路(2)的开放端附近相对的位置以规定长度和宽度形成第1电极开口部(5a),又在开口部宽度中心线往外离开波导管(9)的导体壁λ/4的位置形成第2电极开口部(5b),在开口部(5b)的内周上和外周上形成使接地电极(3)与(4)之间以λ/4导通的通路孔(6),并使电介质基片(1)与波导管(9)靠近,以使开口部(5a)的中心位置与波导管(9)的位置一致。
Description
技术领域
本发明涉及微波段和毫米波段中用的传输线路的线路变换器、具有该变换器的高频部件、组件和通信装置。
背景技术
日本国专利特开平11-112209已揭示具有连接形成传输线路的基片和波导管的线路变换器的高频组件。
该线路变换器在电介质基片的一个面上形成由具有终端的微带线路构成的传输线路,该微带线路的另一端连接高频元件。所述电介质基片的另一面上形成接地电极(接地层),与所述终端相对的位置上形成开口部,在包含该开口部的表面上设置匹配用的介电体,并且将所述波导管电连接到形成所述接地电极的表面,从而将传输线路和波导管相连,使所述开口部成为波导管的中心。
又在具有所述接地电极的面上层叠具有所述匹配用介电体的第2电介质基片,在该第2电介质基片的表面设置导体部,在该导体部形成连接所述接地电极的通路孔或贯通孔,将所述波导管与所述接地电极加以连接,并且将传输线路与波导管连接。
然而,这种已有的高频线路变换器存在以下所述要解决的课题。
已有的线路变换器中,必须使传输线路的接地电极与波导管的导体部导电连接可靠,连接欠妥会产生连接损耗。而且,用钎焊料等对所述连接部进行焊接时,由于钎焊料溢出、不足等原因,造成电性能发生变化,难以实现稳定连接,同时焊接工序管理困难,从而实质上使工序数增加,成体提高。此外,连接部发生热冲击等温度变化时,会发生裂纹,使电性能有较大变化。用螺丝固定所述连接部时,往往因螺丝紧固精度的关系而使电性能受到较大影响,由于间隙和螺丝造成的接触电阻而使电性能变差。
本发明的目的在于提供能稳定构成连接部,损耗低且具有优良变换特性的传输线路与波导管之间的线路变换器、以及具有该变换器的高频部件、组件和通信装置。
发明内容
本发明在作为电介质基片的传输线路形成面的相反面的波导管对置面上的波导管的开口部的相对的位置以及其周围形成接地电极,并且将往外离开波导管开口部导体壁约1/4信号波长的位置作为中心,以规定的宽度形成电极开口部,在电极开口部的内周上和外周上成列形成使波导管对置面的接地电极与传输线路形成面上形成的接地电极或电介质基片的规定层上的接地电极之间以大约1/4信号波长的长度导通的通路孔。
又,本发明在具有所述传输线路的电介质基片与所述波导管的连接中,采用绝缘性粘接剂。
又,本发明用所述线路变换器构成高频部件。
又,本发明用所述高频部件构成高频组件。
又,本发明用所述高频组件构成通信装置。
附图说明
图1是第1实施形态的带线路变换器的高频部件电介质基片的俯视图、仰视图和侧剖面图。
图2是第1实施形态的带线路变换器的高频部件的侧剖面图。
图3是第2实施形态的带线路变换器的高频部件电介质基片的俯视图、仰视图和侧剖面图。
图4是第2实施形态的带线路变换器的高频部件的侧剖面图。
图5是第3实施形态的带线路变换器的高频部件的侧剖面图。
图6是第4实施形态的带线路变换器的高频部件的侧剖面图。
图7是第5实施形态的带线路变换器的高频部件的电介质基片的俯视图、仰视图和侧剖面图。
图8是第6实施形态的带线路变换器的高频部件的电介质基片的俯视图、仰视图和侧剖面图。
图9是第7实施形态的带线路变换器的高频部件的电介质基片的俯视图、仰视图和侧剖面图。
图10是第8实施形态的高频组件的框图。
图11是第9实施形态的通信装置的框图。
符号说明
1、1a、1b 电介质基片
2 带状线路
3、4、4a、4b 接地电极
5a、5b、5c 开口部
6 通路孔
7 高频无件
8 导线
9 波导管
10 框体
11 高频部件
12 绝缘性粘接剂
13 连接螺钉
14 螺帽
15 导体
16 间隙
λ 传输信号波长
具体实施形态
下面参照图1、图2说明带第1实施形态的线路变换器的高频部件的结构。
图1(A)是带线路变换器的高频部件的电介质基片的俯视图,(B)和(D)是该基片的侧剖面图,(C)则为其仰视图。又,图2是电介质基片上连接波导管的状态下的侧剖面图。
图1的(A)~(D)中,1是电介质基片,在电介质基片1的图1(A)所示的面上形成接地电极3和带状线路2,该线路2的一端为开路端,另一端通过导线8连接高频元件7。带状线路2的周围设置开口部,使带状线路2与接地电极3分开。又在图1(C)所示的面上形成接地电极4,并且在与带状线路2开路端相对的位置以规定的长度和宽度形成第1电极开口部5a,往外离开第1电极开口部5a规定距离按规定的宽度形成第2电极开口部5b。在第2电极开口部5b的四周,除与带状线路2相对的位置外,排列形成使接地电极3与接地电极4导通的多个通路孔6。
如图2所示,将电介质基片1与波导管9靠近配置,使电介质基片1的第1电极开口部5a的中心位置与波导管9的中心位置一致。这时,预先形成第2电极开口部5b,使第2电极开口部5b的宽度中心线为往外离开波导管9导体壁约1/4信号波长λ的位置,电介质基片1的厚度也形成信号波长λ的约1/4。又在具有带状线路2的面上,用盖体10覆盖带状线路2、接地电极3、高频元件7、导线8,从而构成为高频部件11。高频元件7还通过带状线路2以外的传输线路连接于外部电路。
这种状态下,图2中的点a与点b之间、点b与点c之间的距离分别为λ/4,点a与点c之间的距离为λ/2。点a和点b开路,点c则短路,因而波导管9与电介质基片1的接地电极4之间形成的空间和多个通路孔5所包围的电介质基片1的内部空间构成阻波电路。由于该阻波电路,点a等效于接地电位,无耦合电阻。
所述带状线路2与接地电极4和电介质基片1一起作为微带线起作用。第1电极开口部5a作为配置在波导管9与带状线路2之间的狭缝(缝隙)起作用,仅在规定的传输模下,带状线路的传输模与波导管的传输模耦合。即,微带线的磁场分量穿过第1电极开口部5a,与波导管的TE10模耦合,进行线路变换。
这样,微带线与波导管9之间以低损耗变换信号。
下面参照图3、图4说明第2实施形态的带线路变换器的高频部件的结构。
图3(A)是带线路变换器的高频部件的电介质基片俯视图,(B)和(D)是该基片的侧剖面图,(c)则为其抑视图。图4是电介质基片上连接波导管的状态下的侧剖面图。
图3(A)~(D)中,1a是第1电介质基片,第1电介质基片1a的图3(A)所示的面上,分别形成一端为开路端并且另一端通过导线8与高频元件7连接的带状线路2和与高频元件7对应的接地电极3。另一方面,在与第1电介质基片1a的形成带状线路2的面相对的面上形成接地电极4a,并且在与带状线路2的开路端相对的位置形成第1电极开口部5a。又在具有接地电极4a的面上层叠厚度为约1/4传输信号波长λ的第2电介质基片1b,并在其表面(图3(C)所示的面)上分别形成接地电极4b、与第1电极开口部5a相对的位置上的第2电极开口部5c、往外离开第2电极开口部5c规定距离的第3电极开口部5b。还在第2电极开口部5c和第3开口部5b的周围排列形成使接地电极4a与接地电极4b导通的多个通路孔6。
又如图4所示,使第2电介质基片1b与波导管9靠近,以使第2电介质基片1b中第2电极开口部5c的中心位置与波导管9的中心位置一致。这时,预先形成第3电极开口部5b,使第3电极开口部5b的宽度中心线为往外离开波导管9的导体壁1/4信号波长λ的位置,第2电介质基片1b的厚度也形成约1/4信号波长λ。又,在第1电介质基片1a的具有带状线路2的面上,用盖体10覆盖状带线路2、接地电极3、高频元件7、导线8,从而构成为高频部件11。高频元件7通过带状线路2以外的传输线路连接于外部电路。
在这种状态下,图4(A)中的点a与点b之间、点b与点c之间的距离分别为λ/4,点a与点c之间的距离为λ/2。点a和点b开路,点c则短路,因而波导管9与电介质基片1的接地电极4之间形成的空间和多个通路孔6所包围的电介质基片1的内部空间构成阻波电路。由于该阻波电路,点a等效于接地电位,无耦合电阻。
所述带状线路2与接地电极4a及电介质基片1a一起作为微带线起作用。第1电极开口部5a作为配置在波导管9与带状线路2之间的狭缝(缝隙)起作用,仅在规定的传输模下,带状线路的传输模与波导管的传输模耦合。也就是说,微带线的磁场分量穿过第1电极开口部5a,与波导管的TE10模耦合,进行低杂散线路变换。
又,第2电介质基片1b中在第2开口部5c周围形成的多个通路孔6所包围的介电体区域,具有使作为所述狭缝(缝隙)的第1电极开口部5a的阻抗与波导管9的阻抗匹配的功能,并且第2电介质基片1b的厚度为1/4信号波长λ,从而作为匹配层起作用。由于具有该匹配层,可进行更低损耗的线路变换。
这样,在同一电介质基片1b上具备匹配层和阻波电路的功能,可简化部件结构,并且作为高频线路变换器整体上可以小型化,可以降低制造成本。
又,形成传输线路的电介质基片的厚度,通常比传输信号波长λ的长度小,但将匹配层与传输线路形成层分开,按厚度为λ/4设置,不需要把形成传输线路的电介质基片的厚度做成1/4传输信号波长λ。因此,可任意设定形成传输线路的电介质基片的厚度,增加设计自由度。
下面参照图5说明第3实施例的带线路变换器的高频部件的结构。
图5是在电介质基片上连接波导管的状态下的侧剖面图。
图5所示的带线路变换器的高频部件是在第2实施形态所示的高频部件中,在电介质基片1b与波导管9的连接部采用绝缘性粘接剂12,其他结构与第2实施形态所示的相同。采用绝缘性粘接剂12,使电介质基片1b与波志管9的连接的机械强度加大,能得到稳定的连接。与已有技术中采用的钎焊料(例如AuSn)等导电性连接剂相比,绝缘性粘接剂价格低廉,能减少安装成本,可廉价构成带线路变换器的高频部件。
下面参照图6说明第4实施形态的带线路变换器的高频部件的结构。
图6是在电介质基片上连接波导管的状态下的侧剖面图。
图6所示带线路变换器的高频部件是在第2实施形态所示的高频部件中,采用连接螺杆13和螺帽14连接电介质基片1b与波导管9的连接部,其他结构与第2实施形态所述的结构相同。采用连接螺杆13和螺帽14,使电介质基片1b与波导管9的连接的机械强度加大,能得到稳定的连接。又,电介质基片1b与波导管9的间隔作为阻波电路的一部分起作用,但所述间隔的些许偏差不影响阻波导电路的功能,因而便于将电介质基片1b与波导管9加以连接,能构成具有稳定的变换性且可靠性高的带线路变换器的高频部件。
下面参照图7说明第5实施形态的带线路变换器的高频部件的结构。
图7是电介质基片连接波导管的状态下的侧剖面图。
图7所示带线路变换器的高频部件是第2实施形态所示的高频部件中,在电介质基片1b上形成的第2电极开口部5c的中央以规定的长度和宽度形成导体15,其他结构与第2实施形态所示的相同的部件。取这样的结构,使其作为多级谐振电路起使用,从而第1电介质基片1a、带状线路2和接地电极4a组成的微带线与波导管9的匹配可在较宽的频带中实现,便能方便地构成可在较宽频带匹配的带线路变换器的高频部件。
下面参照图8说明第6实施形态的带线路变换器的高频组件的结构。
图8(A)是带线路变换器的高频部件的电介质基片俯视图,(B)和(D)是该基片的侧剖面图,(C)则为其仰视图。图2是电介质基片连接波导管的状态下的侧剖面图。
图8(A)~(D)中,1是电介质基片,电介质基片1的图8(A)所示的面上形成接地电极3和具有短路端的缝隙16。缝隙16的另一端部上通过线路变换器连接外部电路和元件。又在图8(c)所示的面上形成接地电极4,与离开缝隙16短路端规定长度的位置相对,并按规定的长度和宽度形成第1电极开口部5a,在其中央以规定的长度和宽度形成导体15。此外,往外离开第1电极开口部5a规定的距离,以规定的宽度形成第2电极开口部5b。在第2电极开口部5b的周围,除与缝隙16相对的位置外,排列形成使接地电极3与接地电极4导通的多个通路孔6。
这种状态下,与前面所示各实施形态的情况相同,使波导管靠近图8(c)所示的面。
所述缝隙16与接地电极4以及电介质基片1一起作用缝隙线(接地缝隙线)起作用。导体15分别与波导管9及缝隙线耦合,仅在规定的传输模下,使缝隙线传输模与波导管传输模耦合,亦即缝隙线的磁场分量和波导管中TE10模的磁力线分量都耦合到导体15,进行线路变换。
这时,如第1实施形态所示,第2开口部5b和通路孔6包围的介电体区域构成的阻波电路的功能起作用,抑制连接电阻,信号从波导管低损耗变换到缝隙线。
下面参照图9说明第7实施形态的带线路变换器的高频部件的结构。
图9(A)是带线路变换器的高频部件的电介质基片俯视图,(B)和(D)是该基片的侧剖面图,(C)则为其仰视图。
图9中带线路变换器的高频部件在第1实施形态的高频部件的第1电极开口部5a的中央按规定的长度和宽度形成导体15,并且用通路孔6使对置面上形成的条状线路2与导体15导通。这样,即使让连接面上形成的导体15与带状线路2导通,传输信号也匹配,无连接电阻,能够从波导管到带状线路2无损耗地变换信号。
此外,上述各实施形态所示的线路变换器的高频部件中,作为基片的材料,采用铝烧制基片、玻璃陶瓷基片和树脂基片等;作为传输线路的形态,除上述各实施形态分别示出的线路形态外,采用共平面线也同样能在波导管与电介质基片上形成的线路之间以低损耗变换信号。
下面参照图10说明第8实施形态的高频组件的结构。
图10是第8实施形态的高频组件的结构框图。
图10中ANT为收发信天线,Cir.为循环器,BPFa和BPFb分别为带通滤波器,AMPa和AMPb分别为放大电路,MIXa和MIXb分别为混频器,OSC为振荡器,SYN为合成器,IF为中频信号。
MIXa对调制信号和SYN输出的信号进行混频,BPFa仅使MIXa来的混频输出信号中的发送频带通过,AMPa将该带通信号功率放大后,通过Cir.由ANT发送。AMPb将从Cir.提取的接收信号放大。BPFb仅使AMPb输出的接收信号中的接收频带通过。MIXb对SYN输出的频率信号和接收信号进行混频,输出中频信号IF。
图10所示的放大电路AMPa、AMPb部分可以采用上述图1~图9所示结构的高频部件,通过使用该高频部件,构成低损耗且通信性能优良的高频组件。
下面参照图11说明第9实施形态的通信装置的结构。
图11是第9实施形态的通信装置的结构框图。
此通信装置由图10所示的高频组件和信号处理电路构成。图11所示的信号处理电路由编译码电路、同步控制电路、调制器、解调器和CPU等组成,此信号处理电路还设置输入输出收发信号的电路,从而构成通信装置。
通过这样使用高频组件,构成低损耗且通信性能优良的通信装置。
采用本发明,在电介质基片中传输线路形成面的相反面、即波导管对置面上的波导管的开口孔部的相对的位置及其周围形成接地电极,并且将往外离开波导管开口部导体壁约1/4信号波长的位置作为中心,以规定的宽度形成电极开口部,同时使电介质基片与波导管靠近,使开口部的中心位置与波导管的中心位置一致,从而能方便地构成非接触且具有稳定的传输特性的低损耗线路变换器。
采用本发明,由于利用绝缘粘接剂连接具有所述传输线路的电介质基片和波导管,与使用钎焊料的情况相比,能廉价构成。
采用本发明,由于具有所述线路变换器,从而能构成低损耗且具有优良变换特性的高频部件。
采用本发明,由于利用所述高频部件,从而能构成减小变换损耗且具有优良电特性的高频部件。
采用本发明,由于利用所述高频组件,从而能构成减小变换损耗且具有优良通信特性的通信装置。
Claims (5)
1.一种高频线路变换器,将形成传输线路的基片与波导管加以连接,其特征在于,
在所述基片的所述传输线路形成面的相反面、即波导管对置面上的所述波导管的开口部的相对的位置及其周围形成接地电极,并且将往外离开所述波导管开口部导体壁约1/4信号波长的位置作为中心,以规定的宽度形成电极开口部,在所述电极开口部的内周上和外周上成列形成使所述波导管对置面的接地电极与所述传输线路形成面上形成的接地电极或所述基片的规定层上形成的接地电极之间以大致为所述信号波长的1/4的长度导通的通路孔。
2.如权利要求1所述的高频线路变换器,其特征在于,所述电介质基片与所述波导管的连接采用绝缘性粘接剂。
3.一种高频部件,其特征在于,具有权利要求1或2所述的线路变换器。
4.一种高频组件,其特征在于,具有权利要求3所述的高频部件。
5.一种通信装置,其特征在于,具有权利要求4所述的高频组件。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001267501A JP2003078310A (ja) | 2001-09-04 | 2001-09-04 | 高周波用線路変換器、部品、モジュールおよび通信装置 |
JP2001267501 | 2001-09-04 | ||
JP2001-267501 | 2001-09-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1404183A true CN1404183A (zh) | 2003-03-19 |
CN1212690C CN1212690C (zh) | 2005-07-27 |
Family
ID=19093625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021319588A Expired - Fee Related CN1212690C (zh) | 2001-09-04 | 2002-09-04 | 高频线路变换器、部件、组件和通信装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7095292B2 (zh) |
JP (1) | JP2003078310A (zh) |
CN (1) | CN1212690C (zh) |
DE (1) | DE10239796B4 (zh) |
GB (1) | GB2382727B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101772859B (zh) * | 2007-08-02 | 2013-01-09 | 三菱电机株式会社 | 波导管的连接结构 |
CN105680135A (zh) * | 2014-10-16 | 2016-06-15 | 现代摩比斯株式会社 | 导波管对电介质导波管的迁移构造 |
CN109075420A (zh) * | 2016-04-26 | 2018-12-21 | 华为技术有限公司 | 印刷电路板和波导之间的射频互连 |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3981346B2 (ja) * | 2003-06-26 | 2007-09-26 | 京セラ株式会社 | 誘電体導波管線路と導波管との接続構造並びにその構造を用いたアンテナ装置及びフィルター装置 |
FR2869725A1 (fr) * | 2004-04-29 | 2005-11-04 | Thomson Licensing Sa | Element de transition sans contact entre un guide d'ondes et une ligne mocroruban |
JP4188373B2 (ja) * | 2004-06-28 | 2008-11-26 | 三菱電機株式会社 | 多層誘電体基板および半導体パッケージ |
US7528797B2 (en) * | 2005-08-29 | 2009-05-05 | Kyocera Wireless Corp. | Electrical connector with frequency-tuned groundplane |
JP4687714B2 (ja) * | 2005-08-25 | 2011-05-25 | 株式会社村田製作所 | 線路変換器、高周波モジュールおよび通信装置 |
JP4799238B2 (ja) * | 2006-03-28 | 2011-10-26 | 京セラ株式会社 | 開口面アンテナ |
DE102007021615A1 (de) * | 2006-05-12 | 2007-11-15 | Denso Corp., Kariya | Dielektrisches Substrat für einen Wellenhohlleiter und einen Übertragungsleitungsübergang, die dieses verwenden |
US7899432B2 (en) * | 2006-06-19 | 2011-03-01 | California Institute Of Technology | Submillimeter wave heterodyne receiver |
JP4833026B2 (ja) * | 2006-10-31 | 2011-12-07 | 三菱電機株式会社 | 導波管の接続構造 |
EP1923950A1 (en) * | 2006-11-17 | 2008-05-21 | Siemens S.p.A. | SMT enabled microwave package with waveguide interface |
JP4365852B2 (ja) * | 2006-11-30 | 2009-11-18 | 株式会社日立製作所 | 導波管構造 |
JP4648292B2 (ja) * | 2006-11-30 | 2011-03-09 | 日立オートモティブシステムズ株式会社 | ミリ波帯送受信機及びそれを用いた車載レーダ |
WO2009041696A1 (ja) * | 2007-09-27 | 2009-04-02 | Kyocera Corporation | 高周波モジュールおよび配線基板 |
WO2009116403A1 (ja) * | 2008-03-17 | 2009-09-24 | 三菱電機株式会社 | 多層誘電体基板および半導体パッケージ |
US9449618B2 (en) * | 2008-04-21 | 2016-09-20 | Seagate Technology Llc | Microwave assisted magnetic recording system |
US8022784B2 (en) * | 2008-07-07 | 2011-09-20 | Korea Advanced Institute Of Science And Technology (Kaist) | Planar transmission line-to-waveguide transition apparatus having an embedded bent stub |
JP2010056920A (ja) * | 2008-08-28 | 2010-03-11 | Mitsubishi Electric Corp | 導波管マイクロストリップ線路変換器 |
JP5531960B2 (ja) * | 2008-08-29 | 2014-06-25 | 日本電気株式会社 | 導波管接続構造および導波管接続方法 |
JP4995174B2 (ja) * | 2008-10-28 | 2012-08-08 | シャープ株式会社 | 無線通信装置 |
JP4794616B2 (ja) * | 2008-11-28 | 2011-10-19 | 日本ピラー工業株式会社 | 導波管・ストリップ線路変換器 |
CN101494312B (zh) * | 2009-02-24 | 2013-11-27 | 惠州硕贝德无线科技股份有限公司 | 基于缝隙耦合的波导—微带线变换及功率分配器 |
CN102414911A (zh) * | 2009-04-28 | 2012-04-11 | 三菱电机株式会社 | 波导变换部的连接构造、其制造方法、以及使用该连接构造的天线装置 |
EP2427908A1 (en) * | 2009-05-08 | 2012-03-14 | Telefonaktiebolaget L M Ericsson (publ) | A transition from a chip to a waveguide port |
US8305280B2 (en) * | 2009-11-04 | 2012-11-06 | Raytheon Company | Low loss broadband planar transmission line to waveguide transition |
FR2952457B1 (fr) * | 2009-11-10 | 2011-12-16 | St Microelectronics Sa | Dispositif electronique comprenant un composant semi-conducteur integrant une antenne |
WO2011118544A1 (ja) * | 2010-03-24 | 2011-09-29 | 日本電気株式会社 | 無線モジュール及びその製造方法 |
JP4988002B2 (ja) | 2010-03-25 | 2012-08-01 | シャープ株式会社 | 無線通信装置 |
US8169060B2 (en) | 2010-03-29 | 2012-05-01 | Infineon Technologies Ag | Integrated circuit package assembly including wave guide |
US9059329B2 (en) * | 2011-08-22 | 2015-06-16 | Monolithic Power Systems, Inc. | Power device with integrated Schottky diode and method for making the same |
US8552813B2 (en) | 2011-11-23 | 2013-10-08 | Raytheon Company | High frequency, high bandwidth, low loss microstrip to waveguide transition |
US9450282B2 (en) | 2012-04-25 | 2016-09-20 | Nec Corporation | Connection structure between a waveguide and a substrate, where the substrate has an opening larger than a waveguide opening |
JP5955799B2 (ja) * | 2013-03-19 | 2016-07-20 | 株式会社東芝 | 高周波回路及び高周波回路―導波管変換器 |
US9257735B2 (en) * | 2013-03-22 | 2016-02-09 | Peraso Technologies Inc. | Reconfigurable waveguide interface assembly for transmit and receive orientations |
JP6417329B2 (ja) * | 2013-10-01 | 2018-11-07 | ソニーセミコンダクタソリューションズ株式会社 | コネクタ装置及び通信システム |
JP6164103B2 (ja) * | 2014-01-27 | 2017-07-19 | 富士通株式会社 | 半導体モジュール |
JP6372113B2 (ja) * | 2014-03-17 | 2018-08-15 | 富士通株式会社 | 高周波モジュール及びその製造方法 |
JP6314705B2 (ja) * | 2014-07-04 | 2018-04-25 | 富士通株式会社 | 高周波モジュール及びその製造方法 |
US10325850B1 (en) * | 2016-10-20 | 2019-06-18 | Macom Technology Solutions Holdings, Inc. | Ground pattern for solderability and radio-frequency properties in millimeter-wave packages |
AT521225A1 (de) * | 2018-05-09 | 2019-11-15 | Siemens Ag Oesterreich | Elektronisches Gerät mit einem Gehäuse und einer Antennenanordnung |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4562416A (en) * | 1984-05-31 | 1985-12-31 | Sanders Associates, Inc. | Transition from stripline to waveguide |
US4761116A (en) * | 1987-05-11 | 1988-08-02 | General Electric Company | Turbine blade with tip vent |
JPH02151225A (ja) * | 1988-11-29 | 1990-06-11 | Showa Electric Wire & Cable Co Ltd | マンホール用架台 |
JPH02174515A (ja) * | 1988-12-23 | 1990-07-05 | Toshiba Corp | ディジタル電流差動継電装置 |
US4983933A (en) | 1989-10-05 | 1991-01-08 | Sedco Systems Inc. | Waveguide-to-stripline directional coupler |
JP2822097B2 (ja) | 1990-06-06 | 1998-11-05 | アイコム株式会社 | 磁気ループ型同軸・導波管変換器 |
US5202648A (en) * | 1991-12-09 | 1993-04-13 | The Boeing Company | Hermetic waveguide-to-microstrip transition module |
JPH06140816A (ja) | 1992-10-08 | 1994-05-20 | Mitsubishi Electric Corp | 導波管/マイクロストリップ線路変換器 |
JPH08162810A (ja) * | 1994-12-08 | 1996-06-21 | Nec Corp | ストリップライン導波管変換回路 |
JP2605654B2 (ja) * | 1995-03-31 | 1997-04-30 | 日本電気株式会社 | 複合マイクロ波回路モジュール及びその製造方法 |
FR2762140B1 (fr) * | 1997-04-10 | 2000-01-14 | Mesatronic | Procede de fabrication d'une carte a pointes de contact multiple pour le test des puces semiconductrices |
US6239669B1 (en) * | 1997-04-25 | 2001-05-29 | Kyocera Corporation | High frequency package |
JP3580680B2 (ja) * | 1997-09-30 | 2004-10-27 | 京セラ株式会社 | 高周波用パッケージおよびその接続構造 |
JPH1123615A (ja) * | 1997-05-09 | 1999-01-29 | Hitachi Ltd | 接続装置および検査システム |
JPH1174708A (ja) | 1997-09-01 | 1999-03-16 | Mitsubishi Electric Corp | マイクロストリップ線路/同軸変換器 |
US5982250A (en) * | 1997-11-26 | 1999-11-09 | Twr Inc. | Millimeter-wave LTCC package |
US6040739A (en) * | 1998-09-02 | 2000-03-21 | Trw Inc. | Waveguide to microstrip backshort with external spring compression |
EP1014471A1 (en) * | 1998-12-24 | 2000-06-28 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Waveguide-transmission line transition |
-
2001
- 2001-09-04 JP JP2001267501A patent/JP2003078310A/ja active Pending
-
2002
- 2002-08-29 DE DE10239796A patent/DE10239796B4/de not_active Expired - Fee Related
- 2002-09-03 US US10/234,796 patent/US7095292B2/en not_active Expired - Fee Related
- 2002-09-04 GB GB0220588A patent/GB2382727B/en not_active Expired - Fee Related
- 2002-09-04 CN CNB021319588A patent/CN1212690C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101772859B (zh) * | 2007-08-02 | 2013-01-09 | 三菱电机株式会社 | 波导管的连接结构 |
CN105680135A (zh) * | 2014-10-16 | 2016-06-15 | 现代摩比斯株式会社 | 导波管对电介质导波管的迁移构造 |
CN109075420A (zh) * | 2016-04-26 | 2018-12-21 | 华为技术有限公司 | 印刷电路板和波导之间的射频互连 |
Also Published As
Publication number | Publication date |
---|---|
DE10239796B4 (de) | 2009-12-10 |
US20030042993A1 (en) | 2003-03-06 |
US7095292B2 (en) | 2006-08-22 |
DE10239796A1 (de) | 2003-04-03 |
GB2382727B (en) | 2003-11-12 |
GB2382727A (en) | 2003-06-04 |
JP2003078310A (ja) | 2003-03-14 |
GB0220588D0 (en) | 2002-10-16 |
CN1212690C (zh) | 2005-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1212690C (zh) | 高频线路变换器、部件、组件和通信装置 | |
US7199680B2 (en) | RF module using mode converting structure having short-circuiting waveguides and connecting windows | |
CN101383343B (zh) | 无线通信装置 | |
CN1153312C (zh) | 介质滤波器、介质双工器和通信设备 | |
CN1269913A (zh) | 多模式介质谐振装置、介质滤波器、复合介质滤波器、合成器、分配器和通信装置 | |
CN1169256C (zh) | 滤波器装置、双工器和通信装置 | |
CN1054705C (zh) | 集成电路 | |
CN1203570C (zh) | 电介质谐振器、滤波器、双工器和通信器件 | |
CN1140007C (zh) | 介质滤波器、天线共用器和通信装置 | |
CN1185751C (zh) | 介质滤波器、双工器和包含它们的通信设备 | |
CN1181596C (zh) | 电介质谐振器、电介质滤波器、电介质双工器及通信装置 | |
US7095300B2 (en) | Band eliminate filter and communication apparatus | |
CN1949588A (zh) | 电介质装置 | |
CN1131814A (zh) | 集成电路 | |
WO2004021505A1 (ja) | 線路変換器、高周波モジュールおよび通信装置 | |
CN1177388C (zh) | 介质滤波器、介质双工器和通信设备 | |
CN1160825C (zh) | 介电滤波器、介电双工器以及包含它们的通信设备 | |
CN1180511C (zh) | 电介质滤波器、电介质双工器以及通信装置 | |
CN1159940C (zh) | 复合介质滤波器器件及含有该器件的通信装置 | |
CN102738552A (zh) | 电介质谐振器件 | |
CN1147961C (zh) | 介质滤波器、介质双工器和使用它的通信设备 | |
CN1198357C (zh) | 介质双工器和通信设备 | |
CN1226806C (zh) | 电介质谐振器、电介质滤波器、电介质双工器及通信装置 | |
CN1272871C (zh) | 介电滤波器导电盖、介电滤波器、介电双工器及通信装置 | |
CN1135647C (zh) | 介质滤波器和使用它的通信装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050727 Termination date: 20130904 |