CN1415115A - 在原子层沉积过程中使寄生化学气相沉积最小化的装置和原理 - Google Patents

在原子层沉积过程中使寄生化学气相沉积最小化的装置和原理 Download PDF

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CN1415115A
CN1415115A CN00818182A CN00818182A CN1415115A CN 1415115 A CN1415115 A CN 1415115A CN 00818182 A CN00818182 A CN 00818182A CN 00818182 A CN00818182 A CN 00818182A CN 1415115 A CN1415115 A CN 1415115A
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deposition
cvd
reaction
gas
precursor
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CN1191614C (zh
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O·斯讷
C·高勒维斯克
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Yogi Ness Co
Eugene Technology Co Ltd
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Genus Inc
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Abstract

公开了在层积中，例如原子层沉积(ALD)和其它顺序化学沉积(CVD)过程中，避免沉积膜的污染的新方法和装置，其中ALD膜的CVD沉积污染通过使用一种有效地使污染物气体在通入ALD腔室之前在气体输送装置的壁元件上沉积的预热反应室来防止。

Description

在原子层沉积过程中使寄生化学气相 沉积最小化的装置和原理
发明领域
本发明属于化学气相沉积领域，更具体地涉及通过原子层沉积来沉积膜的新方法和装置。本发明是这些新方法的扩展，特别包括防止寄生化学气相沉积和所产生的污染的方法。
发明背景
在集成电路的制造中，必须沉积许多纯的和混合材料薄膜，现已开发出许多技术来实现这类沉积。近年来，在该领域中沉积薄膜的主导技术是化学气相沉积(CVD)，其证实具有优异的能力来提供均一平坦的镀层，并相对共形地镀覆通孔并镀覆晶片地貌中的其它高长宽比或不平坦地形。由于器件密度持续增加，几何形状变得越来越复杂，甚至优异的CVD技术共形镀覆也受到了挑战，因而需要新的和更好的技术。
CVD的变化方法，原子层沉积已被认为得到了对均一性和共形性的改进，特别是对于低温沉积。但这种技术的实际实施需要解决更高的纯度和更高的产量问题。本专利满足了这些需求。
原子层沉积
在CVD领域中，作为扩展CVD技术的能力的有前途的备选方案，出现了称为原子层沉积(ALD)的方法，并正在由半导体设备制造者快速开发以进一步改进化学气相沉积的特性。ALD是最初被称为原子层取向生长的一种方法，其权威的文献是：Atomic Layer Epitaxy(原子层取向生长)，T.Suntola和M.Simpson编辑，Blackie，Glasgo andLondon出版(1990)。这篇出版物在此引入作为参考。
一般来说，ALD是一种这样的方法，其中将常规的CVD方法分为单一单层沉积步骤，其中各单独的沉积步骤理论上在进行至以单分子或原子单层厚度时达到饱和，并自行终止。
所述沉积是有反应活性的分子前体与基体之间化学反应的结果。与CVD相似，构成所述膜的元素呈分子前体来提供。净反应必须沉积纯的所需的膜并消除构成所述分子前体的“额外”原子(配位体)。在CVD的情况下，同时向CVD反应器中加入分子前体。将基体保持在最适于促进分子前体化学反应并伴随有效解吸附副产物的温度下。由此，进行所述反应以沉积所需的纯膜。
对于ALD应用，将分子前体单独地引入到ALD反应器中。实际做法是，一次流入一种前体，即含有金属元素-M的金属前体-MLX(M＝Al，W，Ta，Si等)，所述金属元素连接于原子或分子配位体L以构成挥发性分子。所述金属前体反应之后通常进行惰性气体吹扫以在单独地引入其它前体之前在所述腔室中消除这种前体。
这种吹扫步骤(或有时称为抽真空步骤)对不含不希望的CVD组分的ALD膜是关键的。在吹扫步骤(抽空)中，从所述腔室和气体引入管线中除去最后使用的化学品，以使得能够引入不同的化学品。
仅在将表面处理为直接与分子前体进行反应的条件下，ALD反应才会发生。因而，通常将表面制成包含含氢配位体-AH，所述AH有与金属前体的反应活性。表面-分子反应可进行至与表面上的所有配位体都进行了反应并沉积了金属与其钝化配位体的单层：基体-AH+MLX→基体-AMLY+HL，其中HL是交换反应副产物。在反应过程中，初始表面配位体-AH被消耗，表面变得被L配位体覆盖，该配位体不能再与金属前体-MLX进行反应。因而，当所有初始表面配位体均被--MLX类所置换时所述反应自饱和。
在金属前体反应完成后，在引入另一前体之前，从所述反应器中除去所有的金属前体。使用第二种类型的前体来恢复表面对金属前体的反应活性，即消除L配位体并再沉积AH配位体。
大多数ALD方法已应用于沉积化合物膜。在这种情况下，所述第二种前体由所需的(通常为非金属的)元素组成-A(即O、N、S)、和氢，使用例如H2O、NH3、或H2S。所述反应：-ML+AHZ→-M-AH+HL(为简化起见，所述化学反应未进行配平)将表面重新转化为被AH覆盖。沉积所需的添加元素-A，并将配位体L呈挥发性副产物消除掉。所述反应再次消耗反应活性部位(这次为L封端部位)并当反应性部位完全耗尽时自饱和。
将表面恢复至起点的表面反应的顺序称为ALD沉积循环。恢复至初始表面是ALD的关键。其意味着所述膜可呈相等的计量顺序来分层沉积，所述顺序的化学动力学、每次循环的沉积量、组成和厚度完全相同。自饱和表面反应使得ALD对无论来自流动工程(flowengineering)或表面形貌(即在高的长宽比结构上沉积)的不均一性的传导都不敏感。不均一的流量仅可导致在不同区域的不同的完成时间。但，如使各反应在全部区域上完成，不同的完成动力学没有不利的影响。
对方法的开发常常是这样的，对新技术的最初预期的优点最终不能达到其全部最初预期。不利的是，ALD具有严重的基本问题。与连续稳态性的CVD反应不同，ALD反应按照分子-表面相互作用机理来进行。分子-表面反应动力学取决于分子前体与表面反应性部位之间的各个反应速率以及可利用的反应性部位的数量。在反应进行终止时，表面由反应性转化为非反应性。因而在沉积过程中反应速率是逐渐下降的。在最简单的情况下，速率dN/dt与反应性部位数量成正比，dN/dt＝-kN，其中N为反应性部位的数量，k为(单个部位)反应速率。反应性部位的消耗(或已反应过的部位的增长)与时间为指数关系kN(t)＝kN0exp(-kt)。分子-表面机理的这种基本性质以伟大的科学家Langmuir来命名，在所述领域中是广为公知的。
对Langmuirian动力学限制的解释说明了ALD的严重缺陷以及与理想图形的严重偏差。因此，自终止反应从来没有理想地自终止(它们需要无限的时间，因为速率呈指数下降)。这意味着在实际条件下，表面在沉积循环后根本不能反应至完全。如表面不完全进行反应，则在膜上留有不需要的元素。例如，如MLX反应不能完全消耗表面-AH部位，则所述膜会有H混入。类似的，如AHY反应不进行至完成，则不需要的L的混入是不可避免的。显然，膜的质量取决于杂质量的量。产量-质量之间的折衷是特别值得关心的，因为其需要指数关系的产量损失来达到杂质数量的下降。
在常规的原子层沉积中，必须接受低的产量来达到高纯度的膜，或接受较低纯度的膜来实现较高的产量。显然需要一种装置和方法，其不仅克服了Langmuirian限制，而且同时提供了比现有技术的方法更高纯度的膜。在本发明的实施方案中提供了这类装置和方法，以下对其详细叙述。
除上述理想情况外，ALD化学品如在上述实例中的MLX和AHZ通常是极有反应活性的，即使其在腔室中以痕量同时存在，也会导致大量的不需要的CVD副反应。由于CVD是极不需要的伴生过程，对于高产量ALD装置的加工来说，快速和有效吹扫是最难实现和富有挑战的方面。
化学品输送管线必须短且不含截留体积以利于有效吹扫化学品。然而，对实现有效吹扫的一些限制来自难以避免的管线表面渗气(outgassing)。因而，以生产中有限的短吹扫时间不可能排除一些痕量的化学品的混合。因此需要一种快速方法来在引入所需的新化学品前体之前除去痕量的先前使用的化学品前体。
我们的发明满足了该明显和当前的需求，作为一种装置和方法，提供了一种ALD预反应器，其消除了痕量的化学品的混合，使得在基体上的ALD膜中没有CVD成分。
发明简述
在本发明的优选实施方案中，提供了在原子层沉积过程中将寄生化学气相沉积减至最小的方法，其包括如下步骤：(a)在气体源和将要镀覆的基体之间设置预反应室；和(b)在所述预反应室中将一表面加热至足以使污染物元素通过CVD反应沉积在所述加热表面上的温度。
在另一实施方案中，提供了用于原子层沉积系统的预反应室，其包括自气体源向气体分布装置以交替、渐增方式输送气体的通道；和在所述预反应室中的加热表面，用于在气体进入气体分布装置之前使污染物元素沉积。
在以下详细叙述的本发明的实施方案中，首次提供了一种方法和装置用于在原子层沉积过程中有效除去污染物气体，结果使循环次数显著增加。
附图简要说明
图1是用于实施本发明实施方案的自由基辅助顺序CVD方法(radical-assisted sequential CVD process)的反应器和相关装置的概括图。
图2是图示原子层沉积法的必要步骤的步骤图。
图3是图示按照本发明实施方案的自由基辅助顺序CVD方法中步骤的步骤图。
图4图示的是对于具有良好设计的气流源和脉冲子系统的系统的典型的与时间相关的化学品前体分压曲线。
图5表示的是与时间相关的化学品前体分压曲线，其中通过实施本发明的实施方案而达到了有明晰界限的“流出(flow off)”条件。
图6是实现本发明改进实施方案的自由基辅助顺序CVD的反应器和相关装置的概括图，所述改进实施方案消除了不需要的CVD副反应。
图7图示了图6中反应器的第二种实施方案。
图8图示了图6中反应器的第三种实施方案。
图9图示了图6中反应器的第四种实施方案。
优选实施方案的说明
本发明人设计了一种ALD增强型变体，其改变了ALD的常规表面处理步骤，克服了常规ALD的问题，在不损害质量的条件下得到了高的产量。本发明人将所述新的独特的方法称为自由基辅助顺序CVD(RAS-CVD)。
图1是用于实施本发明一种实施方案的RAS-CVD的系统11的概括图。在这种系统实例中，沉积室13具有用于支撑和加热所要镀覆的基体19的可加热炉床，和气体分布装置，如喷头(Showerhead)15，用于将气态物质输送到要进行镀覆的基体表面上。基体通过阀21和未示出的基体操作装置引入和从腔室13中移出。气体由气体源和脉冲装置23提供，其包括计量和阀控装置用于顺序提供气体物质。可提供任选的处理装置25用于由装置23提供的气体产生气体自由基。
术语“自由基”是本领域中公知且可理解的，为避免混淆在这里再次对其进行限制。自由基是指不稳定的物质。例如，氧在双原子形态是稳定的，且在自然中主要以这种形态存在。但双原子氧可分裂为单原子形态，或与另一个原子化合形成臭氧，一种具有三个原子的分子。单原子氧和臭氧均是氧的自由基形态，且比双原子氧更具有反应活性。在本发明实施方案的许多情况下，所生产和使用的自由基是各种气体的单原子形态，所述气体如氧、氢、和氮，但本发明并不严格限定于单原子气体。
图2是常规原子层沉积过程的步骤图，其作为本发明的对比和背景知识来提供。在常规ALD中，如图2中所示，在步骤31中将第一分子前体脉冲输送到反应器室中，并与表面进行反应产生(理论上)单层的所需材料。在这些方法中前体时常为含金属气体，且沉积的材料是金属；例如TaCl5中的钽。
在通用方法的步骤33中将惰性气体脉冲输送到反应器室中以从所述室中吹扫出过量的第一前体。
在常规系统的步骤35中将第二种前体(通常为非金属性的)脉冲输送到反应器中。这种第二前体的主要目的是将基体表面调整为对第一种前体有反应活性。在许多情况下，第二种前体还由气体分子提供了与在表面上的金属进行化合的材料，与新沉积的金属形成化合物如氧化物或氮化物。
在步骤37，反应器室再次进行吹扫以除去过量的第二种前体，然后重复步骤31。该循环重复进行直到得到所需的膜。
图3是图示本发明实施方案的自由基辅助CVD方法中步骤的步骤图。在图3所示的独特方法中，第一步骤，步骤41和43是与常规方法中相同的。在步骤41脉冲输送第一种前体与基体表面进行反应形成单层沉积物，在步骤43中对所述室进行吹扫。下一步骤是独特的。在步骤45中，将一种或多种自由基物质脉冲输送到基体表面以对表面任选地提供第二种物质并将所述表面调整为对在随后步骤中的第一种前体有反应活性。然后重复步骤41。没有必要进行第二次吹扫，且所述循环重复进行直到得到所需的膜。
步骤45可是涉及单一自由基物质的单一的步骤。例如，第一种前体可沉积金属，如来自WF6的W，在步骤45中的自由基物质可为原子氢。原子氢快速并有效地将残余的F中和为HF，使表面以原子氢为端基，提供了对下一WF6脉冲的反应性表面。
在许多情况下，步骤45是复合步骤，其包含涉及不同自由基物质的子步骤。一个较好的实例是按如下次序，原子氢，接着是原子氧，接着又是原子氢。第一个氢步骤中和了Cl或其它残余的配位体，原子氧提供了新沉积金属的氧化物，第二原子氢使表面以(OH)为端基，为下一金属前体步骤做准备。
在步骤45中有宽种类范围的材料和组合，以下对其中多种进行详细叙述，同时对工艺化学进行完整的说明。
在RAS-CVD中，在金属前体反应之后，引入高反应活性的自由基物质以快速与金属前体反应产物进行反应，使表面为下一金属前体反应做好准备。自由基物质，如以上所引入的，是反应性原子或分子片段，它们在化学性质上是不稳定的，因而极具反应活性。另外，自由基实际上以100％的效率化学吸附到表面上。可以若干种途径来产生自由基，已发现等离子体制备法是有效和适宜的制备途径。
RAS-CVD方法仅使用单一的分子前体，在许多情况下是金属前体。表面的准备以及非金属元素的沉积通过原子-表面反应来实现。在金属前体反应之后，以-ML为端基的表面与氢原子进行反应将表面转化为-MH并消除了HL副产物。与分子-表面反应不同，原子-表面反应不取决于反应性部位的数量密度。大多数原子(除惰性气体外)很有效地以不可逆的过程粘附到表面上，因为原子脱附通常是不利的。原子在非反应性部位上是极有流动性的，在反应性部位上是很有反应活性的。相应的，原子-表面反应具有线性的与暴露相关的(linear exposuredependence)关系，并具有高速率。
-MH表面可与A原子进行反应产生-M-A-表面。在这种情况下，一些H配位体可呈AHY被消除。例如，-MH表面可与氧原子进行反应来沉积氧化物。-MH表面还可再与MLX反应来进行M金属膜的原子层受控沉积。为沉积氮化合物膜，A为原子氮。在A原子反应之后，表面以A-和AH封端。在这时，添加的原子与氢反应将所述表面转化为对金属前体有反应活性的所需的AH配位体。MH表面还可与A和H原子的混合物进行反应，以减少了一个步骤的过程来将所述表面转化为以-AH封端的表面。所有上述反应均是自由基一表面反应，所述反应是快速和有效的并与暴露成线性关系。另外，最终的氢反应在没有引入任何杂质的情况下导致完全恢复至初始的表面。
RAS-CVD的另一与产量有关的优点是在金属前体步骤后只需要单一的吹扫步骤，而不是常规方法中所需要的两个吹扫步骤。多数研究者认为吹扫步骤是在ALD过程中最显著的限制产量的步骤。另一优点是RAS-CVD可使系统具有更长的正常运行时间并减少了维修量。这是因为原子物质可在沉积单元的铝壁上有效地骤冷。因而实际上消除了在所述室和泵送管线上的下游沉积。RAS-CVD排除了H2O和NH3的使用，而在现有技术中这两者(分别)用来沉积氧化物和氮化物。这些前体公知增加了维修量和真空系统的停机时间。
按照上述用于金属氧化物膜的典型RAS-CVD循环包括如下步骤：
1.金属前体与以-OH(羟基)封端的表面进行反应以连接-O-MLY并通过HL脱附来消除氢。所述表面变得被L配位体所覆盖，即在TaCl5的情况下，所述表面变得被Cl原子所覆盖。
2.用惰性气体吹扫以清除过量的金属前体。
3.原子氢步骤-通过HL脱附来消除配位体L并使所述表面以氢封端。
4.原子氧步骤-与单层金属进行反应以形成氧化物。为进行下一金属前体步骤，原子氢再次离开被羟基所饱和的表面。
这时，通过将步骤4+5进行多次可改进氧化物膜的质量(即绝缘性能、介电强度、电荷捕集性(charge trapping))。例如，由三甲基铝Al(CH3)3、氢和氧作用可实现Al2O3 RAS-CVD。Al(CH3)3与-OH封端的表面的反应使得在甲烷(CH4)脱附的同时会沉积-OAl(CH3)x。-OAl(CH3)x(x＝1，2)表面用H处理以消除数量为x的甲烷分子并使所述表面以-OAlH封端。在连续(或同时)与O原子和H原子的反应之后，这种表面变为以OAl-OH封端，这是复原态。在这时，可通过施行另一Al(CH3)3反应来进行RAS-CVD方法。另外，-OAl-OH表面还可经受另一循环的O和H原子作用。在高于100℃的温度下，这一方法会使OH基团与Al-O-Al桥部位交换，且产生的-OAl-OH表面比最初的表面在热力学上是更有利的，因为所述方法消除了张力更大的(Al-O-)n环结构以及消除(titrating away)缺陷和断裂的键。由于原子反应是相当快的，这些质量改进预期不会成为产量的主要影响因素。事实上，最终的质量可通过将O、H循环施行数次来实现。在进行给定次数的O、H原子反应后，所述顺序继续进行下一Al(CH3)3反应。
6.重复自1的步骤。
对于金属氮化物来说，用氮来取代氧。为进行纯金属沉积，可消除氧/氮步骤以利于单原子氢步骤，例如对于钨膜。在第一原子氢步骤之后为氢所饱和的表面是与WF6有反应活性的，可生成纯金属。
RAS-CVD的一般性质对不同氧化物、不同氮化物、氧化物与氮化物、不同金属和金属与化合物膜的多层组合膜是有利的。
在适用于阻挡层的另一独特的方法中，可将WN方法与纯W方法结合来以各种历程产生交替的W和WN层，从而抑制多晶化并减少阻挡层的电阻率。例如电迁移的其它性能可通过在用于这类应用的铜的界面上提供氮含量逐级变小的WN层的性能来控制。
在本发明的实施方案中，可实施很宽种类的化学过程，从而提供很宽种类的最终的膜。例如，在纯金属领域，以下提供了部分但为非限制性的系列：
1.由六氟化钨沉积钨。
2.由五氯化钽沉积钽。
3.由三氯化铝或三甲基铝沉积铝。
4.由四氯化钛或四碘化钛沉积钛。
5.由六氟化钼沉积钼。
6.由二氯化锌沉积锌。
7.由四氯化铪沉积铪。
8.由五氯化铌沉积铌。
9.由Cu3Cl3沉积铜。
在氧化物领域，提供了部分但为非限制性的系列：
1.由五氯化钽沉积五氧化二钽。
2.由三甲基铝或三氯化铝沉积氧化铝。
3.由四氯化钛或四碘化钛沉积氧化钛。
4.由五氯化铌沉积五氧化二铌。
5.由四氯化锆沉积氧化锆。
6.由四氯化铪沉积氧化铪。
7.由二氯化锌沉积氧化锌。
8.由六氟化钼或五氯化钼沉积氧化钼。
9.由二氯化锰沉积氧化锰。
10.由四氯化锡沉积氧化锡。
11.由三氯化铟或三甲基铟沉积氧化铟。
12.由六氟化钨沉积氧化钨。
13.由四氯化硅沉积二氧化硅。
在氮化物领域，以下提供了部分但为非限制性的系列：
1.由六氟化钨沉积氮化钨。
2.由五氯化钽沉积氮化钽。
3.由三氯化铝或三甲基铝沉积氮化铝。
4.由四氯化钛沉积钛。
5.由四氯化硅或二氯硅烷沉积氮化硅。
6.由三甲基镓沉积氮化镓。
硬件要求
RAS-CVD的另一优点是，其在多数情况下与ALD方法的硬件兼容。显著的区别在于产生的原子物质和/或其它自由基，以及气体加入到操作室中的时间选择和次序。可按若干种途径来产生原子物质，例如(1)现场等离子体发生，(2)喷头内等离子体发生，和(3)通过高密度远程(remote)等离子体源或通过如UV解离或亚稳态分子的解离来在外部发生。再参照图1，这些方法和装置总体通过装置25来来图示。
在所述选择方案中，现场发生是最简单的设计，但存在若干问题，如开机-关机次数会对产量产生限制。喷头内发生方式所表现出的优点是，使原子物质的发生与ALD空间相分离。在本说明书中，优选方法是通过高密度源来远程发生，这是因为这是最通用的方法。自由基在远程源中产生并输送到ALD体(volume)，通过喷头分布在所述方法的晶片上。
本领域技术人员显而易见，作为上述实施方案的变体，在本发明的范围内存在多种可实施的选择方案。一些已进行过叙述。例如，所需物质的自由基如氢、氧、氮可在若干种途径来发生并输送到所述方法的步骤中。另外，ALD腔室、气体分布、阀控、计时等均可在许多具体细节上进行变化。再有，可产生许多金属、氧化物、氮化物和类似物，且所述方法的步骤可进行改变并可交错进行以产生分级(graded)和交替的膜。
在原子层沉积过程中使寄生化学气相沉积最小化的装置和原理
在本发明其它实施方案中，提供了在ALD过程中防止CVD沉积产生的污染的装置和方法。图4是对使用化学品前体物质快速脉冲和吹扫步骤的运行良好的系统的概括了的化学品前体分压与时间关系曲线46。各活性化学品前体的分压47定性地图示于所述图的Y轴，而X轴表示时间。为简便起见图示了前体“A”49和前体“B”50的分压。具有两种以上前体的系统的行为表现相类似，只是对各化学品有独特的分压峰。
在图4中要特别指出的是，在各脉冲起始时各前体分压快速升高，在各脉冲结束时有独特的“尾线”。这种“尾线”表示一种不希望的情况，其中所述前体没有完全从沉积系统中除去。这种尾线是各种实际现象的结果，如，例如，气体分子与导管和腔室表面具有一定的亲合力，在气流关断后这些表面捕集的分子在系统中持续析出，在真空领域该现象称为渗气。如将下一种前体引入到图6的沉积室59中，在前一种前体仍存在的情况下，会发生不希望的CVD副反应，并污染在图6的基体61上的所需的膜。除污染所述膜外，不希望的CVD反应会在气相中成核，导致在基体61上或沉积室59中产生不希望的颗粒聚集。
图5是对运行良好的系统的理想的化学品前体物质分压与时间关系曲线51，其中所述系统使用化学品前体物质的快速脉冲、吹扫步骤、和在本专利应用中所包括的新颖的预反应器。各活性化学品前体的分压52定性地图示于所述图的Y轴，而X轴表示时间。为简便起见图示了前体“A”54和前体“B”55的分压。具有两种以上前体的系统的行为表现相类似，只是对各化学品有独特的分压峰。
在图5中要特别指出的是，在各脉冲起始时各前体分压快速升高，在各程序化的流动脉冲结束时快速下降。图4所示独特的化学品“尾线”被消除，这主要是由于本发明所述新颖的预反应器的结果。用来除去引起这种“尾线”效应的痕量化学品前体的方法和装置在以下进行详细叙述。
图6是用于实施本发明另一种实施方案的RAS-CVD的系统56的简图。虽然作为实例使用了RAS-CVD，但本发明人要清楚指出的是，本发明的装置和方法不局限于RAS-CVD，而是可普遍地应用于所有种类的ALD和许多其它顺序CVD方法中。
在这种系统实例中，沉积室59具有用于支撑和加热所要镀覆的基体61的可加热炉床，和气体分布装置，例如喷头60，用于将气体类输送到所要镀覆的基体表面。基体经阀64和未图示的基体操作装置来引入并从室59中移出(编号65)。由气体源和脉冲装置57来提供气体，所述装置包括计量和阀控装置以按顺序提供气体物质。提供任选的处理装置58来由装置57所提供的气体产生气体自由基。这一系统添加预反应器66来提供对不需要的CVD副反应的改进的控制。
所述预反应器可呈各种形态，在图6、7、8和9中图示了一些可行的变体形式，以下对其进行详细叙述。所有图均使用气体源和脉冲装置57、用于产生自由基的任选的处理装置58、气体分布装置60、沉积室59、用于加热基体61的加热炉床62、废弃化学品排出系统63、基体进入和移出65的阀64。这些物品在这一系统实例中是相同的。另外，图示的是全部预反应器的一些而非全部的实施方式。例如，在一种实施方案中，气体分布装置如喷头可起两种作用，也可作为预反应器室。
在图6中，预反应器室66图示为实体上独立的室，在所述加工气体通道中其位于产生气体自由基的任选的处理装置和气体分布喷头之间。预反应过程可在具有足够活化能的任何表面上发生，所述活化能由加热、RF等离子体、UV或其它途径来提供。
图7是用于实施本发明另一实施方案中RAS-CVD的系统67的简图。在图7中，图示了两种预反应器68的实施方案。第一种是将预反应器68加入到气体分布喷头60中。在这种情况下，使不希望的CVD副反应在气体分布喷头68内的独立、加热表面上发生。这种加热表面可种类很宽的方式来提供，且预反应器室的形态可呈种类很宽的形态，举例来说，例如为，长的、盘绕加热管。不需要的化学品“尾线”的快速除尽消除了在基体上发生副反应的可能性，减少了各种化学反应物进入所述系统之间的时间。在一种优选实施方案中，预反应的必需热量输入由喷头装置与基体61的接近来提供，使得热量由加热炉传递到所述基体上。
图8是提供了实施RAS-CVD的系统69的本发明另一种实施方案的简图。在图8中，图示了两种预反应器70的实施方案。第一种是将预反应器70加入到气体分布喷头60中，其在原理上与图7相似。在这种情况下，使不希望的CVD副反应在气体分布喷头68自身的加热表面上发生，在这一实施方案中，通过加热炉床62和基体61这些部件与喷头60接近来对喷头进行加热。同样，不需要的化学品“尾线”的快速除尽消除了在基体上发生副反应的可能性，减少了各种化学反应物进入所述系统之间的时间。
图9是在本发明的再另一实施方案中用于实施RAS-CVD的系统71的简图。在图9中，图示了两种预反应器72的实施方案。第一种是将预反应器72加入到气体分布喷头60中，其在原理上与图7相似。但在这种新的实施方案中，通过使用喷头内产生的RF等离子体对不需要的CVD副反应进行活化来使不希望的CVD副反应在气体分布喷头68预反应器72组合体内发生。这种方法使得不需要的化学品“尾线”的快速除尽，消除了在基体上发生副反应的可能性，减少了各种化学反应物进入所述系统之间的时间。
除这些变化形式外，对技术人员显而易见，通过在这里叙述的过程中以可沉积两种、三种或更多种金属的合金的方式来引入交替的加工步骤，可沉积出两种、三种或更多种组分的化合物，并可制备出如分级膜和纳米层合体的这类材料。这些变化形式是以交替循环方式、通常为现场方式使用本发明具体实施方案的简单变换。在本发明的实质和范围内存在许多其它变化形式，所以本发明仅由后附的权利要求书来限定。另外，特别是参照本发明的预反应室方面，对技术人员显而易见，与所述实施方案的各种偏离仍属于本发明的实质和范围，再有，还可对实施方案和变化形式进行组合。例如，在本发明范围内等离子体活化可简易地用于预反应室中，其中所述室自身可呈种类很宽的任何形态。

Claims (2)

1.在原子层沉积过程中将寄生化学气相沉积减至最小的方法，其包括如下步骤：
(a)在气体源和所要镀覆的基体之间设置预反应室；和
(b)在所述预反应室中将一表面加热至足以使污染物元素通过CVD反应沉积在所述加热表面上的温度。
2.用于原子层沉积系统的预反应室，其包括：
自气体源向气体分布装置以交替、渐增方式输送气体的通道；和
在所述预反应室中的加热表面，用于在气体进入气体分布装置之前使污染物元素沉积。
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