CN1429406A - 非易失性存储单元的均匀位线交连 - Google Patents
非易失性存储单元的均匀位线交连 Download PDFInfo
- Publication number
- CN1429406A CN1429406A CN01809611A CN01809611A CN1429406A CN 1429406 A CN1429406 A CN 1429406A CN 01809611 A CN01809611 A CN 01809611A CN 01809611 A CN01809611 A CN 01809611A CN 1429406 A CN1429406 A CN 1429406A
- Authority
- CN
- China
- Prior art keywords
- memory cell
- layer
- grid
- cell array
- bit line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 11
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229960003753 nitric oxide Drugs 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008672 reprogramming Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Abstract
Description
Claims (10)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20462100P | 2000-05-16 | 2000-05-16 | |
US60/204,621 | 2000-05-16 | ||
US09/721,035 US6275414B1 (en) | 2000-05-16 | 2000-11-22 | Uniform bitline strapping of a non-volatile memory cell |
US09/721,035 | 2000-11-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1429406A true CN1429406A (zh) | 2003-07-09 |
CN100447986C CN100447986C (zh) | 2008-12-31 |
Family
ID=26899634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018096115A Expired - Fee Related CN100447986C (zh) | 2000-05-16 | 2001-05-01 | 非易失性存储单元的均匀位线交连 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6275414B1 (zh) |
EP (1) | EP1282915B1 (zh) |
JP (1) | JP5016769B2 (zh) |
KR (1) | KR100771679B1 (zh) |
CN (1) | CN100447986C (zh) |
AU (1) | AU2001257485A1 (zh) |
BR (1) | BR0110812A (zh) |
TW (1) | TW512351B (zh) |
WO (1) | WO2001088985A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100446221C (zh) * | 2005-06-14 | 2008-12-24 | 旺宏电子股份有限公司 | 制造限制性电荷存储器的方法 |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6538270B1 (en) * | 2000-05-16 | 2003-03-25 | Advanced Micro Devices, Inc. | Staggered bitline strapping of a non-volatile memory cell |
US6828199B2 (en) * | 2001-12-20 | 2004-12-07 | Advanced Micro Devices, Ltd. | Monos device having buried metal silicide bit line |
US6642148B1 (en) | 2002-04-19 | 2003-11-04 | Advanced Micro Devices, Inc. | RELACS shrink method applied for single print resist mask for LDD or buried bitline implants using chemically amplified DUV type photoresist |
US6853587B2 (en) * | 2002-06-21 | 2005-02-08 | Micron Technology, Inc. | Vertical NROM having a storage density of 1 bit per 1F2 |
JP4678760B2 (ja) * | 2002-06-21 | 2011-04-27 | マイクロン テクノロジー, インク. | メモリセルのアレイ、メモリアレイ、メモリデバイス及び多重状態セルを有するメモリアレイを形成する方法 |
US7750389B2 (en) * | 2003-12-16 | 2010-07-06 | Micron Technology, Inc. | NROM memory cell, memory array, related devices and methods |
US6917544B2 (en) * | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
US6794764B1 (en) * | 2003-03-05 | 2004-09-21 | Advanced Micro Devices, Inc. | Charge-trapping memory arrays resistant to damage from contact hole information |
US6979857B2 (en) | 2003-07-01 | 2005-12-27 | Micron Technology, Inc. | Apparatus and method for split gate NROM memory |
US7095075B2 (en) * | 2003-07-01 | 2006-08-22 | Micron Technology, Inc. | Apparatus and method for split transistor memory having improved endurance |
US6873550B2 (en) * | 2003-08-07 | 2005-03-29 | Micron Technology, Inc. | Method for programming and erasing an NROM cell |
US7085170B2 (en) * | 2003-08-07 | 2006-08-01 | Micron Technology, Ind. | Method for erasing an NROM cell |
US6977412B2 (en) | 2003-09-05 | 2005-12-20 | Micron Technology, Inc. | Trench corner effect bidirectional flash memory cell |
US6830963B1 (en) * | 2003-10-09 | 2004-12-14 | Micron Technology, Inc. | Fully depleted silicon-on-insulator CMOS logic |
US7184315B2 (en) * | 2003-11-04 | 2007-02-27 | Micron Technology, Inc. | NROM flash memory with self-aligned structural charge separation |
US7202523B2 (en) * | 2003-11-17 | 2007-04-10 | Micron Technology, Inc. | NROM flash memory devices on ultrathin silicon |
US7050330B2 (en) * | 2003-12-16 | 2006-05-23 | Micron Technology, Inc. | Multi-state NROM device |
US7241654B2 (en) | 2003-12-17 | 2007-07-10 | Micron Technology, Inc. | Vertical NROM NAND flash memory array |
US7157769B2 (en) * | 2003-12-18 | 2007-01-02 | Micron Technology, Inc. | Flash memory having a high-permittivity tunnel dielectric |
US6958272B2 (en) * | 2004-01-12 | 2005-10-25 | Advanced Micro Devices, Inc. | Pocket implant for complementary bit disturb improvement and charging improvement of SONOS memory cell |
US6878991B1 (en) * | 2004-01-30 | 2005-04-12 | Micron Technology, Inc. | Vertical device 4F2 EEPROM memory |
KR100645040B1 (ko) * | 2004-02-09 | 2006-11-10 | 삼성전자주식회사 | 소오스 스트래핑을 갖는 플래시 메모리 소자의 셀 어레이 |
US6952366B2 (en) * | 2004-02-10 | 2005-10-04 | Micron Technology, Inc. | NROM flash memory cell with integrated DRAM |
US7221018B2 (en) * | 2004-02-10 | 2007-05-22 | Micron Technology, Inc. | NROM flash memory with a high-permittivity gate dielectric |
US7072217B2 (en) * | 2004-02-24 | 2006-07-04 | Micron Technology, Inc. | Multi-state memory cell with asymmetric charge trapping |
US7075146B2 (en) | 2004-02-24 | 2006-07-11 | Micron Technology, Inc. | 4F2 EEPROM NROM memory arrays with vertical devices |
US7102191B2 (en) * | 2004-03-24 | 2006-09-05 | Micron Technologies, Inc. | Memory device with high dielectric constant gate dielectrics and metal floating gates |
US7274068B2 (en) | 2004-05-06 | 2007-09-25 | Micron Technology, Inc. | Ballistic direct injection NROM cell on strained silicon structures |
KR100604875B1 (ko) | 2004-06-29 | 2006-07-31 | 삼성전자주식회사 | 스트랩 영역을 갖는 비휘발성 반도체 메모리 소자 및 그제조방법 |
US7638850B2 (en) | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
JP2007027760A (ja) | 2005-07-18 | 2007-02-01 | Saifun Semiconductors Ltd | 高密度不揮発性メモリアレイ及び製造方法 |
US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
US7652923B2 (en) * | 2007-02-02 | 2010-01-26 | Macronix International Co., Ltd. | Semiconductor device and memory and method of operating thereof |
US8415721B2 (en) * | 2011-05-23 | 2013-04-09 | Flashsilicon Incorporation | Field side sub-bitline nor flash array and method of fabricating the same |
KR20160001152A (ko) | 2014-06-26 | 2016-01-06 | 삼성전자주식회사 | 비휘발성 메모리 소자 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4698900A (en) * | 1986-03-27 | 1987-10-13 | Texas Instruments Incorporated | Method of making a non-volatile memory having dielectric filled trenches |
US5168334A (en) * | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
US5319593A (en) * | 1992-12-21 | 1994-06-07 | National Semiconductor Corp. | Memory array with field oxide islands eliminated and method |
JP3584494B2 (ja) * | 1994-07-25 | 2004-11-04 | ソニー株式会社 | 半導体不揮発性記憶装置 |
US5635415A (en) * | 1994-11-30 | 1997-06-03 | United Microelectronics Corporation | Method of manufacturing buried bit line flash EEPROM memory cell |
ATE213562T1 (de) * | 1995-08-11 | 2002-03-15 | Imec Inter Uni Micro Electr | Verfahren zum programmieren einer flash-eeprom- speicherzelle unter optimierung des niedrigen leistungsverbrauchs und verfahren zum löschen dieser zelle |
JP3075211B2 (ja) * | 1996-07-30 | 2000-08-14 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JP3225916B2 (ja) | 1998-03-16 | 2001-11-05 | 日本電気株式会社 | 不揮発性半導体記憶装置とその製造方法 |
US6215148B1 (en) * | 1998-05-20 | 2001-04-10 | Saifun Semiconductors Ltd. | NROM cell with improved programming, erasing and cycling |
US6107133A (en) * | 1998-05-28 | 2000-08-22 | International Business Machines Corporation | Method for making a five square vertical DRAM cell |
-
2000
- 2000-11-22 US US09/721,035 patent/US6275414B1/en not_active Expired - Fee Related
-
2001
- 2001-05-01 JP JP2001584486A patent/JP5016769B2/ja not_active Expired - Fee Related
- 2001-05-01 WO PCT/US2001/014122 patent/WO2001088985A2/en active Application Filing
- 2001-05-01 KR KR1020027015487A patent/KR100771679B1/ko not_active IP Right Cessation
- 2001-05-01 BR BR0110812-3A patent/BR0110812A/pt not_active IP Right Cessation
- 2001-05-01 AU AU2001257485A patent/AU2001257485A1/en not_active Abandoned
- 2001-05-01 EP EP01931005.1A patent/EP1282915B1/en not_active Expired - Lifetime
- 2001-05-01 CN CNB018096115A patent/CN100447986C/zh not_active Expired - Fee Related
- 2001-05-14 TW TW090111429A patent/TW512351B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100446221C (zh) * | 2005-06-14 | 2008-12-24 | 旺宏电子股份有限公司 | 制造限制性电荷存储器的方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1282915B1 (en) | 2014-11-05 |
KR20020097284A (ko) | 2002-12-31 |
WO2001088985A3 (en) | 2002-05-23 |
CN100447986C (zh) | 2008-12-31 |
EP1282915A2 (en) | 2003-02-12 |
TW512351B (en) | 2002-12-01 |
JP5016769B2 (ja) | 2012-09-05 |
AU2001257485A1 (en) | 2001-11-26 |
KR100771679B1 (ko) | 2007-11-01 |
JP2003533884A (ja) | 2003-11-11 |
US6275414B1 (en) | 2001-08-14 |
BR0110812A (pt) | 2003-02-11 |
WO2001088985A2 (en) | 2001-11-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SPANSION CO., LTD. Free format text: FORMER OWNER: SPANSION CO.,LTD. Effective date: 20070427 Owner name: SPANSION CO.,LTD. Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. Effective date: 20070427 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070427 Address after: California, USA Applicant after: SPANSION LLC Address before: California, USA Applicant before: Spanson Co. Effective date of registration: 20070427 Address after: California, USA Applicant after: Spanson Co. Address before: California, USA Applicant before: ADVANCED MICRO DEVICES, Inc. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160411 Address after: California, USA Patentee after: CYPRESS SEMICONDUCTOR Corp. Address before: California, USA Patentee before: SPANSION LLC |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081231 Termination date: 20160501 |