CN1437241A - 可变电阻器件、可变电阻储存器的制造方法及储存器 - Google Patents
可变电阻器件、可变电阻储存器的制造方法及储存器 Download PDFInfo
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- CN1437241A CN1437241A CN03104234A CN03104234A CN1437241A CN 1437241 A CN1437241 A CN 1437241A CN 03104234 A CN03104234 A CN 03104234A CN 03104234 A CN03104234 A CN 03104234A CN 1437241 A CN1437241 A CN 1437241A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of the switching material, e.g. post-treatment, doping
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S502/00—Catalyst, solid sorbent, or support therefor: product or process of making
- Y10S502/525—Perovskite
Abstract
Description
Claims (29)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/072,225 | 2002-02-07 | ||
US10/072,225 US6759249B2 (en) | 2002-02-07 | 2002-02-07 | Device and method for reversible resistance change induced by electric pulses in non-crystalline perovskite unipolar programmable memory |
Publications (2)
Publication Number | Publication Date |
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CN1437241A true CN1437241A (zh) | 2003-08-20 |
CN100364075C CN100364075C (zh) | 2008-01-23 |
Family
ID=27610555
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031042341A Expired - Fee Related CN100364075C (zh) | 2002-02-07 | 2003-02-08 | 可变电阻器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US6759249B2 (zh) |
EP (1) | EP1335417A3 (zh) |
KR (1) | KR100473662B1 (zh) |
CN (1) | CN100364075C (zh) |
TW (1) | TW575927B (zh) |
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CN101213638B (zh) * | 2005-06-30 | 2011-07-06 | L·皮尔·德罗什蒙 | 电子元件及制造方法 |
CN103066205A (zh) * | 2012-12-21 | 2013-04-24 | 北京大学 | 一种阻变存储器制备方法 |
CN103500797A (zh) * | 2013-10-17 | 2014-01-08 | 北京科技大学 | 阻变存储器单元及其制造方法 |
CN101055917B (zh) * | 2006-01-09 | 2014-04-09 | 三星电子株式会社 | 阻抗存储元件、其操作方法以及使用其的数据处理系统 |
CN108987568A (zh) * | 2018-07-27 | 2018-12-11 | 河北大学 | 基于钒酸铋颗粒薄膜的神经仿生器件、其制备方法及应用 |
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2003
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- 2003-02-07 KR KR10-2003-0007846A patent/KR100473662B1/ko active IP Right Grant
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101213638B (zh) * | 2005-06-30 | 2011-07-06 | L·皮尔·德罗什蒙 | 电子元件及制造方法 |
CN101055917B (zh) * | 2006-01-09 | 2014-04-09 | 三星电子株式会社 | 阻抗存储元件、其操作方法以及使用其的数据处理系统 |
CN103066205A (zh) * | 2012-12-21 | 2013-04-24 | 北京大学 | 一种阻变存储器制备方法 |
CN103500797A (zh) * | 2013-10-17 | 2014-01-08 | 北京科技大学 | 阻变存储器单元及其制造方法 |
CN103500797B (zh) * | 2013-10-17 | 2016-09-07 | 北京科技大学 | 阻变存储器单元及其制造方法 |
CN108987568A (zh) * | 2018-07-27 | 2018-12-11 | 河北大学 | 基于钒酸铋颗粒薄膜的神经仿生器件、其制备方法及应用 |
CN108987568B (zh) * | 2018-07-27 | 2021-12-14 | 河北大学 | 基于钒酸铋颗粒薄膜的神经仿生器件、其制备方法及应用 |
Also Published As
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KR100473662B1 (ko) | 2005-03-10 |
US6759249B2 (en) | 2004-07-06 |
US6664117B2 (en) | 2003-12-16 |
TW200303054A (en) | 2003-08-16 |
US20030156445A1 (en) | 2003-08-21 |
US20030148546A1 (en) | 2003-08-07 |
CN100364075C (zh) | 2008-01-23 |
KR20030067586A (ko) | 2003-08-14 |
TW575927B (en) | 2004-02-11 |
EP1335417A2 (en) | 2003-08-13 |
US20030148545A1 (en) | 2003-08-07 |
EP1335417A3 (en) | 2006-01-04 |
US6673691B2 (en) | 2004-01-06 |
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