CN1457506A - 抛光剂及基片的抛光方法 - Google Patents
抛光剂及基片的抛光方法 Download PDFInfo
- Publication number
- CN1457506A CN1457506A CN02800353A CN02800353A CN1457506A CN 1457506 A CN1457506 A CN 1457506A CN 02800353 A CN02800353 A CN 02800353A CN 02800353 A CN02800353 A CN 02800353A CN 1457506 A CN1457506 A CN 1457506A
- Authority
- CN
- China
- Prior art keywords
- polishing
- polishing agent
- acid
- record
- particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/10—Solid density
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
Abstract
Description
Claims (27)
Applications Claiming Priority (29)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP44252/01 | 2001-02-20 | ||
JP2001044252 | 2001-02-20 | ||
JP44252/2001 | 2001-02-20 | ||
JP197274/01 | 2001-06-28 | ||
JP197274/2001 | 2001-06-28 | ||
JP2001197274 | 2001-06-28 | ||
JP2001350598 | 2001-11-15 | ||
JP350598/01 | 2001-11-15 | ||
JP350598/2001 | 2001-11-15 | ||
JP378838/01 | 2001-12-12 | ||
JP378838/2001 | 2001-12-12 | ||
JP2001378838 | 2001-12-12 | ||
JP400882/2001 | 2001-12-28 | ||
JP400866/01 | 2001-12-28 | ||
JP2001400872 | 2001-12-28 | ||
JP400872/2001 | 2001-12-28 | ||
JP2001400866 | 2001-12-28 | ||
JP400888/2001 | 2001-12-28 | ||
JP400872/01 | 2001-12-28 | ||
JP400891/2001 | 2001-12-28 | ||
JP400876/2001 | 2001-12-28 | ||
JP2001400891 | 2001-12-28 | ||
JP2001400882 | 2001-12-28 | ||
JP2001400876 | 2001-12-28 | ||
JP400888/01 | 2001-12-28 | ||
JP400866/2001 | 2001-12-28 | ||
JP2001400888 | 2001-12-28 | ||
JP400882/01 | 2001-12-28 | ||
JP400876/01 | 2001-12-28 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005101082599A Division CN1746255B (zh) | 2001-02-20 | 2002-02-20 | 抛光剂及基片的抛光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1457506A true CN1457506A (zh) | 2003-11-19 |
CN1290162C CN1290162C (zh) | 2006-12-13 |
Family
ID=27580547
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005101082599A Expired - Lifetime CN1746255B (zh) | 2001-02-20 | 2002-02-20 | 抛光剂及基片的抛光方法 |
CNB028003535A Expired - Lifetime CN1290162C (zh) | 2001-02-20 | 2002-02-20 | 抛光剂及基片的抛光方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005101082599A Expired - Lifetime CN1746255B (zh) | 2001-02-20 | 2002-02-20 | 抛光剂及基片的抛光方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6786945B2 (zh) |
EP (2) | EP2418258A1 (zh) |
JP (2) | JPWO2002067309A1 (zh) |
KR (1) | KR100512134B1 (zh) |
CN (2) | CN1746255B (zh) |
WO (1) | WO2002067309A1 (zh) |
Cited By (30)
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CN100464394C (zh) * | 2005-07-11 | 2009-02-25 | 富士通微电子株式会社 | 使用cmp的半导体器件的制造方法 |
CN100469531C (zh) * | 2007-09-14 | 2009-03-18 | 中国科学院上海光学精密机械研究所 | 氧化锌单晶衬底级基片的抛光方法 |
CN102240967A (zh) * | 2011-06-24 | 2011-11-16 | 中国科学院福建物质结构研究所 | 可用于光电器件衬底的氧化锌单晶抛光技术 |
CN102604541A (zh) * | 2006-03-13 | 2012-07-25 | 卡伯特微电子公司 | 用于抛光氮化硅的组合物及方法 |
CN102967632A (zh) * | 2012-11-30 | 2013-03-13 | 淄博包钢灵芝稀土高科技股份有限公司 | 用电导率指导抛光粉生产和产品质量控制的方法 |
CN103201354A (zh) * | 2010-10-08 | 2013-07-10 | Rec沃佛普特有限公司 | 用于制备光伏晶片和磨料浆料的方法 |
TWI461517B (zh) * | 2008-02-26 | 2014-11-21 | Fujifilm Corp | 研磨液組合及研磨方法 |
CN102585765B (zh) * | 2004-07-23 | 2015-01-21 | 日立化成株式会社 | Cmp研磨剂以及衬底的研磨方法 |
CN104321404A (zh) * | 2012-05-22 | 2015-01-28 | 日立化成株式会社 | 磨粒、悬浮液、研磨液及这些的制造方法 |
CN104321403A (zh) * | 2012-05-22 | 2015-01-28 | 日立化成株式会社 | 磨粒、悬浮液、研磨液及这些的制造方法 |
CN104334675A (zh) * | 2012-05-22 | 2015-02-04 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体 |
CN104335331A (zh) * | 2012-05-22 | 2015-02-04 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体 |
US9039796B2 (en) | 2010-11-22 | 2015-05-26 | Hitachi Chemical Company, Ltd. | Method for producing abrasive grains, method for producing slurry, and method for producing polishing liquid |
US9120200B2 (en) | 2010-12-28 | 2015-09-01 | Saint-Gobain Ceramics & Plastics, Inc. | Polishing slurry including zirconia particles and a method of using the polishing slurry |
CN105229110A (zh) * | 2013-05-21 | 2016-01-06 | 嘉柏微电子材料股份公司 | 具有高的移除速率和低的缺陷率的对于氧化物和氮化物有选择性的化学机械抛光组合物 |
CN106366940A (zh) * | 2016-08-31 | 2017-02-01 | 常熟市光学仪器有限责任公司 | 用于加工光学玻璃的抛光液 |
CN106392792A (zh) * | 2016-09-20 | 2017-02-15 | 福建福晶科技股份有限公司 | 一种用于高速抛光光学圆柱棒的装置 |
TWI580770B (zh) * | 2015-03-05 | 2017-05-01 | 卡博特微電子公司 | 包含陽離子聚合物添加劑之拋光組合物 |
CN106956212A (zh) * | 2017-03-17 | 2017-07-18 | 衢州学院 | 一种采用化学抛光液和陶瓷抛光盘的氮化铝基片抛光方法 |
CN107474799A (zh) * | 2010-03-12 | 2017-12-15 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法 |
US9881802B2 (en) | 2010-11-22 | 2018-01-30 | Hitachi Chemical Company, Ltd | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
US9988573B2 (en) | 2010-11-22 | 2018-06-05 | Hitachi Chemical Company, Ltd. | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
CN108690505A (zh) * | 2017-03-29 | 2018-10-23 | 三星电子株式会社 | 用于化学机械抛光的浆料组合物 |
US10196542B2 (en) | 2012-02-21 | 2019-02-05 | Hitachi Chemical Company, Ltd | Abrasive, abrasive set, and method for abrading substrate |
CN110153873A (zh) * | 2018-02-14 | 2019-08-23 | 台湾积体电路制造股份有限公司 | 研磨设备、检测装置以及半导体基板的研磨方法 |
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US10549399B2 (en) | 2012-05-22 | 2020-02-04 | Hitachi Chemcial Company, Ltd. | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
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JPWO2002067309A1 (ja) | 2004-06-24 |
EP1369906A1 (en) | 2003-12-10 |
EP1369906B1 (en) | 2012-06-27 |
JP4941430B2 (ja) | 2012-05-30 |
US6786945B2 (en) | 2004-09-07 |
KR20020086953A (ko) | 2002-11-20 |
CN1746255A (zh) | 2006-03-15 |
KR100512134B1 (ko) | 2005-09-02 |
JP2009010402A (ja) | 2009-01-15 |
EP1369906A4 (en) | 2009-07-15 |
CN1746255B (zh) | 2010-11-10 |
CN1290162C (zh) | 2006-12-13 |
WO2002067309A1 (fr) | 2002-08-29 |
US20040065022A1 (en) | 2004-04-08 |
EP2418258A1 (en) | 2012-02-15 |
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