CN1471730A - 电子线路装置及其制造方法 - Google Patents

电子线路装置及其制造方法 Download PDF

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Publication number
CN1471730A
CN1471730A CNA028001192A CN02800119A CN1471730A CN 1471730 A CN1471730 A CN 1471730A CN A028001192 A CNA028001192 A CN A028001192A CN 02800119 A CN02800119 A CN 02800119A CN 1471730 A CN1471730 A CN 1471730A
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Prior art keywords
semiconductor element
circuit board
electrode
metal part
circuit device
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CNA028001192A
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CN100394602C (zh
Inventor
����һ
登一博
池田敏
加藤康司
中岛康文
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

半导体元件(111)的电极上形成突块(112)，另外带有突块的半导体元件电连接到有安装部分(114b)的金属部分(114)，因此可去除线路。减少线路引起的杂散电感和传导电阻。通过将安装部分连接到第二电路板可去除常规的凹连接器和凸连接器，使电源控制系统的电子线路装置制造得紧凑。

Description

电子线路装置及其制造方法
技术领域
本发明涉及一种用半导体元件如IGBT(绝缘栅双极型晶体管)、二极管等驱动马达的电源控制系统的电子线路装置，及该电子线路装置的制造方法。
背景技术
近来，随着马达驱动设备中的电子装置性能和功能的提高，马达驱动设备中的工作电流也增加了，需要使用半导体来处理高电流。图16中示出了常规使用的马达驱动设备。以下参考图说明常规使用的马达驱动设备的例子。
在图16中，附图标记分别表示：1a是IGBT；1b是二极管；3是高温焊接剂；4是金属元件；5是密封树脂；6是焊接剂；7是电路板；10是热辐射板；10a是突起的螺钉座；11是螺钉；12是放置了电子元件(无源元件)的表面；13是放置了电子元件(半导体元件)的表面；14是金属基底电路板；15是硅脂；18是金属丝；19是金属导线；22是凸连接器；23是凹连接器；24是绝缘树脂。
下面论述制造这种结构常规马达驱动设备的方法。
IGBT1a、二极管1b等半导体元件1由高温焊接剂3连接到金属元件4上。IGBT1a与二极管1b之间、半导体元件1与金属导线19之间用金属丝18电连接。金属丝18通常为铝丝或金丝。使用铝等形成的金属丝18时，金属丝18采用铝线楔形结合连接到半导体元件1的第二电极。第二电极与半导体元件1的第一电极相对，连接到金属元件4上。半导体元件1的第二电极由铝制成。在常温下用超声波能量将第二电极与金属丝彼此压接到一起时，可去除第二电极和金属丝18铝表面的氧化膜。第二电极与金属丝18就这样连接到一起。连接到半导体元件1第二电极的金属丝18伸向在铜上镀锡得到的金属导体19，通过楔形结合的方法连接到金属导体19上。
其后，为了完好地保护半导体元件1和金属丝18并提高可靠性，对半导体元件1和金属丝18涂层，并用传递成型技术或注射成型技术以密封树脂5将它们密封。弯曲并模切金属导线19，使它与金属元件4变平(even)。通过这样顺序的步骤，可得到名为“TO-220”的电子元件，它包含有半导体元件1、高温焊接剂3、金属元件4、金属丝18、金属导线19和密封树脂5。
在焊接糊剂印制到金属基电路板14上之后，可在金属基电路板上放置各种元件，如上述电子元件“TO-220”、凸连接器22等。将整个金属基电路板放入加热炉，焊接糊剂就会熔化。回到常温后焊接糊剂凝固。凝固的焊接剂6将电子元件“TO-220”、凸连接器22等各种电子元件完全电连接到金属基电路板14上。
为了提供电绝缘，在整个金属基电路板14上使用了密封树脂24。带有各种电子元件的金属基电路板14放入减压炉，去除混入密封树脂24内部的气泡，然后放入加热表面(heating surface)使密封树脂24凝固。
接着，在热辐射板10上使用硅脂15。金属基电路板14紧密接触到热辐射板10，并由螺钉固定。然后，将凸连接器22放置在金属基电路板14上和将凹连接器23放置在电路板7上之后，将凸连接器22插入凹连接器23中，这样电路板7就紧密地接触到突起的螺钉座10a，并由螺钉11固定。
在上述的方式中，完成了将包括电子元件“TO-220”的电子元件放置在金属基电路板14上，用于控制转换马达驱动电流和热辐射需求的过程；组合含有用于控制电子元件“TO-220”的电路的电路板7和无需热辐射的过程。
上述的安排，会因金属丝18和金属导线19的电阻产生损耗，因丝18和导线19的长度产生杂散电感。此外，电子元件“TO-220”装备有金属导线19，因此要求金属基电路板14的面积比电子元件“TO-220”的面积大，这就妨碍了微型化和高密度装配。
同时，用于电子产品之类的马达驱动设备也要求紧凑和高效热辐射，以适应当前电子产品结构更轻、更薄、更小巧的趋势。如果高温焊接剂3内部出现了气泡，气泡会妨碍半导体元件1产生的热传递，因而增加了半导体元件1和金属元件4之间的电阻。结果，只有气泡部分的温度升高，最糟的情况会导致半导体元件1破裂。
如上所述，金属丝18通过与铝丝楔形结合的方法连接到半导体1的第二电极。在以往的技术中，由于连接方法限制了金属丝18的厚度，同时由于基底电极的排布限制了金属丝18的长度，因此不可能减小线电阻。在上述情况中，由于当前半导体元件1的发展程度不能使通态电阻减小，并且由高频、大电流电信号产生的噪音问题也需要改善。
发明内容
本发明解决了上述问题，其本质目的是提供一种电子线路装置，它紧凑、热辐射效率高、能够减少电阻和杂散电感，并提供制造该电子线路装置的方法。
为了达到上述目的，根据本发明的第一方面提供了一种电子线路装置，包括：
需热辐射的半导体元件，在其两端面有彼此相对的电极；
第一电路板，它通过金属板电连接到半导体元件两端面中一端面上的第一电极，金属板和半导体元件放置在它上面；
第二电路板，放置于半导体元件两端面中另一端面上，与第一电路板相对，有半导体元件的控制电路；和
金属丝，直接将位于所述另一端面上电极的第二电极与第二电路板彼此电连接在一起。
上述金属丝可包括第一弯曲部分，用于吸收半导体元件热辐射造成的第一电路板和第二电路板的膨胀和收缩。
连接到第二电极的金属丝可沿半导体元件的厚度方向延伸。
电子线路装置的结构还可进一步包括带有支撑部分的热辐射部分，在其上放置第一电路板并支撑第二电路板，金属丝还可有第二弯曲部分，在支撑部分支撑第二电路板的情况下，用于吸收热辐射造成的第一电路板和第二电路板的膨胀和收缩，并将第一电路板压向热辐射部分。
根据本发明第二方面的电源控制系统的电子线路装置，包括：
需热辐射的半导体元件，在其一端面和另一端面分别有彼此相对的第一电极和第二电极；
突块，位于第二电极上；和
金属部分，其第一表面与第一电极相对并电连接到第一电极；还包括竖立在第一表面上的金属形成的安装部分，当第一表面上放置有带突块的半导体元件时，该安装部分沿着半导体元件厚度方向的高度超过突块。
在上述第二方面的电子线路装置中，给一个金属部分提供三个或更多的安装部分。
第二方面的电子线路装置还可进一步包括第二电路板，放置于另一端面的一方，与突块和安装部分的前端电连接，带有半导体元件的控制电路。
上述第二方面的电子线路装置还可进一步包括带有支撑部分的热辐射部分，通过电绝缘部分在其上放置金属部分，并散发由半导体元件向金属部分传导的热量。
根据本发明的第三方面，提供一种制造电子线路装置的方法，该电子线路装置包括：
需热辐射的半导体元件，在彼此相对的一个端面和另一个端面上分别有第一电极和第二电极；
突块，位于第二电极上；和
金属部分，其第一表面与第一电极相对并电连接到第一电极；还包括竖立在第一表面上的金属形成的安装部分，当第一表面上放置有带突块的半导体元件时，该安装部分沿着半导体元件厚度方向的高度超过突块。
所述的方法包括：
使金属部分的第一表面和第一电极彼此接触，将半导体元件放置在第一表面，加热半导体元件；
在第一表面上放熔化的焊接剂；
分别按压半导体元件和金属部分，去除第一表面和第一电极之间熔化的焊接剂内的气泡；和
降低熔化焊接剂的温度，同时维持按压状态，从而使熔化的焊接剂凝固，将半导体元件和金属部分连接在一起。
在第三方面的制造方法中，将半导体元件和金属元件连接在一起后，该方法进一步包括将突块和安装部分的前端电连接到第二电路板上，第二电路板位于另一端面的一侧上，带有半导体元件的控制电路。
其中，第二电路板附带有许多金属部分时，可调节金属部分的安装部分的高度，使所有金属部分的高度相对于第二电路板一致。
如上所述，根据本发明第一方面的电子线路装置，有金属丝直接将形成于半导体元件另一端面的第二电极和位于另一端面的一侧上的第二电路板电连接到一起。因为常规的凹连接器和凸连接器可去除，电子线路装置能够做的紧凑。
另外，金属丝有弯曲部分时，该弯曲部分可吸收半导体元件热量在第一电路板和第二电路板间产生的膨胀和收缩。
金属丝是沿着半导体元件的厚度方向延伸的，因此电子线路装置能够进一步微型化。
当金属丝沿着半导体元件的厚度方向延伸，并且进一步包括第二弯曲部分时，不仅可以微型化电子线路装置、吸收膨胀和收缩，而且第一电路板还可以压接到热辐射板上，更好地去除热量。
根据本发明第二方面的电子线路装置，半导体元件带有对于第二电极的突块，还带有包含了安装部分的金属部分，因此可去除配线。由配线产生的杂散电感和传导电阻会减小。
当有许多个金属部分时，金属部分的高度可通过调节安装部分得到统一。
半导体元件和第二电路板可通过金属部分直接彼此电连接到一起，因此常规的凹连接器和凸连接器可去除，电子线路装置的尺寸变小。当使用热辐射部分支撑第二电路板时，金属部分的热量可通过一个热辐射部分很好地散出。
根据本发明第三方面的电子线路装置制造方法，半导体元件和金属元件分别彼此压接到一起以去除焊接剂内部的气泡之后，半导体元件和金属部分间的焊接剂凝固。因此，半导体元件和金属部分间的热传导不会被气泡所阻止，能够防止半导体元件异常的温度升高。
附图说明
以下结合优选实施例并参考附图进行说明，使本发明的目的及特征更清晰：
图1是作为根据本发明第一实施例的电源控制系统电子线路装置的第二电路装置的截面图；
图2是构成图1中第一电路单元的半导体元件简图；
图3是图2中半导体元件带有突块时的简图；
图4是带有图3所示突块的半导体元件放置在金属部分上时的简图；
图5是图4进一步带有密封树脂时的简图；
图6是图5中第一电路单元放置在第二电路板上的截面图；
图7是第二电路板上放置了多个第一电路单元的截面图；
图8是据本发明第二实施例作为电源控制系统电子线路装置的第二电路装置的截面图；
图9是图8中第二电路装置改进实例的截面图；
图10是根据本发明第三实施例作为电源控制系统电子线路装置的第二电路装置的截面图；
图11是图10中第二电路装置改进实例的截面图；
图12是根据本发明第四实施例作为电源控制系统电子线路装置的第二电路装置的截面图；
图13是图12中第二电路装置改进实例的截面图；
图14是根据本发明第五实施例作为电源控制系统电子线路装置的第二电路装置的截面图；
图15是图14中第二电路装置改进实例的截面图；和
图16是常规电源控制系统电子线路装置的截面图。
具体实施方式
在本发明开始描述之前，应当注意到附图中相同的附图标记所指的是相同的部分。
下面参考附图说明，根据本发明优选实施例的电子线路装置和制造该电子线路装置的方法。第一实施例
图5所示为电源控制系统的第一电子线路装置(以下称为“第一电路单元”)100，是实施例中电子线路装置的一个例子。图1所示为电源控制系统的第二电路装置(以下称为“第二电路装置”)101，包括了与电子线路装置其它例子相对应的第一电路单元100。
图1中第二电路装置101的构成如下。111是驱动半导体元件，用于控制系统中控制马达之类的驱动设备的驱动电流，需要热辐射处理。驱动半导体元件包括IGBT(绝缘栅双极型晶体管)111-1和二极管111-2。如图3所示，驱动半导体元件111有第一电极111c和第二电极111d分别形成于彼此相对的一端面111a和另一端面111b。112是突块(突出的电极)，形成于驱动半导体元件111第二电极111d上。如图4所示，114是金属部分，辐射和散发由驱动半导体元件111产生的热量。以铜作为基础材料，用模具形成对应于以下所述的安装部分114的突起部分后，金属部分114的整个表面镀锡。金属部分114的第一表面114a与第一电极111c相对，电连接到第一电极111c。113是高温焊接剂，将驱动半导体元件111的第一电极111c与金属部分114的第一表面114a彼此连接在一起。上述安装部分114b突起于第一表面114a，平行于驱动半导体111厚度方向111e，当带有突块112的驱动半导体111放置于第一表面114a上时，其沿着厚度方向111e的高度超过了突块112。实施例中只有一对安装部分114b，但是一个第一电路单元100中可有三个或更多的安装部分。如果有三个或更多的安装部分，如下所述，放置于第二电路板116上时第一电路单元100的平整度能够得到很大的提高。
如图5所示，115是密封树脂，保护驱动半导体元件111和突块112，此时驱动半导体元件111和突块112一起放置在第一表面114a上，在厚度方向111e突块112露出大约一半的高度。以上述方式构成第一电路单元100。
如图6所示，第一电路单元100由突块112和安装部分114b的前段114c，通过焊接剂117，电连接到位于驱动半导体元件111另一端面111b的一侧上的第二电路板116上。
如图1所示，第二电路板116包含了驱动半导体元件111的控制电路，电容、电阻之类的无源电子元件122和晶体管、寄存器等有源电子元件123构成了控制电路，并放置于一个端面或两个端面上。第二电路板116中有内部线路124，将电子元件122和123与驱动半导体元件111电连接。
金属部分位于其上的热辐射部分120，将半导体元件111传到金属部分114的热量散发到空气中。
如图1所示，热辐射部分120还可包含由支撑第二电路板的支撑部分120a形成的凹进处120b。第一电路单元100放置于凹进处120b中，第二电路板116的两端由螺钉121固定在一对支撑部分120a上。通过热压的方法将热消散功效高的绝缘树脂119放置在凹进处120b的底面120c上，以从金属部分114向热辐射部分120传导热量，同时将金属部分114和热辐射部分120彼此电绝缘。另外，在绝缘树脂119和金属部分114之间填充硅脂118，以减少金属部分114和绝缘树脂119间接触部分的热电阻。金属部分114的高度如下所述是一定的，硅脂118作为将金属部分114压向绝缘树脂119的缓冲部分，可使金属部分114与绝缘树脂119彼此一直紧密接触。可用柔软的片代替硅脂118。
第二电路装置101的结构如上所述。
参考图2-6说明形成上述第一电路单元100的方法。
参见图3，用改进了的线结合装置作突起电极成形机器或用电镀的方法，在图2所示的驱动半导体元件111第二铝电极111d上形成镀金突块112。然后如图4所示，在驱动半导体元件111放在金属部分114第一表面114a预定位置的状态下，驱动半导体111和金属部分114放入高温炉中，加热到350℃，炉中维持氮氢混合气体的还原空气状态。根据实施例，在高温炉中将熔化的高温焊接剂113滴到金属部分114的第一表面114a上。结果，金属部分114的第一表面114a与驱动半导体元件111的第一电极111c由高温焊接剂113连接在一起。
高温焊接剂113放入后，对驱动半导体元件111和金属部分114分别相互按压，从第一表面114a和第一电极111c之间熔化的焊接剂内部去除气泡。金属部分114要平行于驱动半导体元件111按压，使金属部分114和驱动半导体元件111紧密接触。保持绝对的接触状态，冷却金属部分114和驱动半导体元件111，使焊接剂113凝固。凝固之后，金属部分114和驱动半导体元件111返回到空气中。
接着参见图5，密封树脂115用于机械保护驱动半导体元件111本身和驱动半导体元件111与突块112间的连接部分。密封树脂115为液体状态，高温设置，或由传递成型技术、注射成型技术形成。以此方法做成第一电路单元100。
随后，为了保护驱动半导体元件111，并可使其作为电子元件使用，如图6所示，第一电路单元100通过焊接剂117同时与第二电路板116上的电子元件122和123连接。连接时可使用通常的表面安装技术(SMT)。
在上述实施例中，金属部分114有金属的安装部分114b，金属的安装部分114b从金属部分114的第一表面114a沿驱动半导体元件111厚度方向111e突起。因此，可通过安装部分114b得到驱动半导体元件111的第一电极111c与第二电路板116之间的电连接，而且还可通过安装部分114b将带有驱动半导体元件111的金属部分114固定到第二电路板116上。因为可去掉常规所需的凹连接器23和凸连接器22，第一电路单元100和第二电路装置101在尺寸上可做的紧凑。同时，驱动半导体元件111的第二电极111d通过突块112电连接到第二电路板116，与使用金属丝18、金属导线19和电阻的常规技术相比，可减少杂散电容。
与常规技术相比通过突块112连接可减少线电阻，因此能够减少接通状态电阻和噪声。
如上所述，通过分别相互按压驱动半导体元件111的第一电极111c和金属部分114可将它们连接到一起，并去除焊接剂113内部的气泡。防止驱动半导体元件111由于空隙产生的异常过热。
图7所示为完成了图2-5的过程后，有多个第一电路单元100连接到第二电路板116上。虽然图7中安装了两个第一电路单元100，但是无需说，可安装三个或更多的单元，或者相反只安装一个单元。在安装多个第一电路单元100的情况下，相对于第二电路板116的第一电路单元100高度H1和H2的误差范围应在一指定数值内。实施例中金属部分114有安装部分114b，每个金属部分114的安装部分114b高度可调，即可切除安装部分114b，因此可将高度H1和H2的位置精确地保持在±50μm的误差范围内。
图1所示的第二电路装置101是图7中第二电路板116和热辐射部分120的组合。第二电路装置101能够发挥与第一电路单元100同样的效果。第二实施例
参见图8说明第二电路装置101的改进实例第四电路装置103。
第四电路装置103包括上述第一电路单元100的改进实例第三电路单元102。图8中的附图标记133所指的是金属制的第一电路板。图8中第二电路板116做单表面安装。
第三电路单元102分别附带有金属弹簧丝136和第二金属部分134，代替第一电路单元100中的突块112和金属部分114。弹簧丝136是导体，将驱动半导体元件111和第二电路板116彼此电连接在一起，如图所示，有第二弯曲部分136a。图8第四电路装置103中，弹簧丝136的一端穿过第二电路板116，焊在第二电路板116上。第二金属部分134没有安装部分114b。弹簧丝136的第二弯曲部分136a没有由密封树脂115密封。
第三电路单元102结构中其他的部分与上述第一电路单元100相同。
上述结构的第三电路单元102中，第二金属部分134通过焊接剂117与第一电路板133连接在一起。第一电路板133通过硅脂118放置在热辐射部分120上。
在上述结构的第四电路装置103中，可通过弹簧丝136的第二弯曲部分136a将第一电路板133按压到热辐射部分120，而且弹簧丝136可吸收热应力，因此可靠性高。
每一个弹簧丝136都平行于厚度方向111e，如图所示，没有与厚度方向111e正交，因此第四电路装置103可做得紧凑。另外，去除了驱动半导体元件111与第二金属部分134间焊接剂113内的气泡，因此可防止空隙引起的驱动半导体元件111异常过热。
图9中所示的第四电路装置103-1是图8中第四电路装置103的变型，如图所示，弹簧丝136-1不穿过第二电路板116，焊接在第二电路板116的一个表面。第二电路板116作双面安装。改进的第四电路装置103-1中的其他部分与上述图8中第四电路装置103的结构相同。
图9中第四电路装置103-1能够获得图8中第四电路装置103同样的效果。第三实施例
参见图10描述第二电路装置101的改进实例第五电路装置104。
在第五电路装置105的结构中，去掉了图16中驱动设备的凸连接器22和凹连接器23，用新的金属导线139连接金属丝18。将驱动半导体元件111和第二金属部分134焊接在一起时，进行上述去除气泡的操作。在图8中对第二电路板116进行单表面安装。
金属导线139是铜镀锡的金属丝，连接到铝楔形结合的铝金属丝18。金属导线139中途形成第一弯曲部分139a。金属导线139的一端穿过第二电路板116焊接。第二电路板116进行双面安装。
去掉了凸连接器22和凹连接器23，金属导线139直接连接到第二电路板116，因此第五电路装置104能够做得紧凑。金属导线139的第一弯曲部分139a能吸收热应力，得到高可靠性。另外，去除了驱动半导体元件111与第二金属部分134间焊接剂113内的气泡，因此可防止空隙引起的驱动半导体元件111异常过热。
图11中所示的第五电路装置104-1是图10中第五电路装置104的变型。如图所示，金属导线139-1不穿过第二电路板116，焊接在第二电路板116的一个表面。第五电路装置104-1结构中的其他部分与上述图10中第五电路装置104相同。
类似地，第五电路装置104-1能够获得图10中第五电路装置104同样的效果。第四实施例
下面参见图12说明上述第四电路装置103的改进实例第六电路装置105。
第六电路装置105中，金属丝141代替了第四电路装置103中的弹簧丝136。金属丝141有金球140，是通过电火花熔化金丝形成的。金球140连接到驱动半导体元件111等上。通过加热和超声波振动金丝，用线结合技术连接金球140。连接后，沿厚度方向111e拔起金属丝141，按预定的长度切割，并用密封树脂115密封以防止变形。金属丝141的一端穿过第二电路板116焊接。第六电路装置结构中的其他部分与图8中所示的前述第四电路装置103相同。
根据第六电路装置105，与第四电路装置103相似，金属丝141沿厚度方向111e延伸，因此第六电路装置105能做的紧凑。另外，去除了驱动半导体元件111与第二金属部分134间焊接剂113内的气泡，因此可防止空隙引起的驱动半导体元件111异常过热。
图13中所示的第六电路装置105-1是图12中第六电路装置105的变型。由图可清楚地看到，金属丝141-1不穿过第二电路板116，焊接在第二电路板116的一个表面。第六电路装置105-1结构中的其他部分与上述第六电路装置105相同。
图13中的第六电路装置105-1能够获得图12中第六电路装置同样的效果。第五实施例
参见图14描述第四电路装置103的改进实例第七电路装置106。
第七电路装置106使用了金属丝142，如铝丝或铜丝。通过用超声波振动的楔形结合技术将金属丝142连接到驱动半导体元件111等上。连接后沿厚度方向111e拔起金属丝142，按预定的长度切割，并用密封树脂115密封以防止变形。金属丝142的一端穿过第二电路板116焊接。第七电路装置106的结构中其它的部分与图8所示的上述第四电路装置103相同。
根据与第四电路装置103相似的第七电路装置106，金属丝142沿厚度方向111e延伸，因此第七电路装置106的尺寸可做得紧凑。也由于金属丝使用了铝或铜，与使用金丝的情况相比，第七电路装置106的构造便宜。除此之外，去除气泡的过程防止了驱动半导体元件111异常过热。
图13中的第七电路装置106变形为如图14所示的第七电路装置106-1。如图所示，金属丝142-1不穿过第二电路板，焊接于第二电路板116的一个表面。改进的第七电路装置106-1中结构的其他部分与前述的第七电路装置106相同。
图14中第七电路装置106-1可获得图13中第七电路装置106同样的效果。
尽管参考附图，结合优选实施例，对本发明作了详细的说明，但是仍应注意到，本领域技术人员可做出各种变化和变型。可以理解，这些变化和变型包含在所附的权利要求限定的本发明的范围内，除非它们不在其中。

Claims (12)

1.一种电子线路装置，包括：
需热辐射的半导体元件(111)，在彼此相对的两端面(111a，111b)形成有电极(111c，111d)；
第一电路板(133)，通过金属平板(134)电连接到半导体元件两端面之一(111a)上的电极的第一电极(111c)上，金属平板和半导体元件放置在它上面；
第二电路板(116)，位于半导体元件两端面的另一端面(111b)的一侧，与第一电路板相对，带有半导体元件的控制电路；和
金属丝(136，136-1，139，139-1，141，141-1，142，142-1)，直接将位于另一端面的电极的第二电极(111d)与第二电路板彼此电连接在一起。
2.根据权利要求1所述的电子线路装置，其中金属丝有第一弯曲部分(139a)，用于吸收半导体元件热辐射引起的第一电路板和第二电路板的膨胀和收缩。
3.根据权利要求1所述的电子线路装置，其中连接到第二电极的金属丝沿半导体元件的厚度方向(111e)延伸。
4.根据权利要求3所述的电子线路装置，进一步包括带有支撑部分(120a)的热辐射部分(120)，在其上放置第一电路板并支撑第二电路板，其中金属丝有第二弯曲部分(136a)，当支撑部分支撑第二电路板时，用于吸收热辐射引起的第一电路板和第二电路板的膨胀和收缩，并将第一电路板压向热辐射部分。
5.一种电子线路装置，包括：
需热辐射的半导体元件(111)，有分别位于彼此相对的一端面(111a)和另一端面(111b)上的第一电极(111c)和第二电极(111d)；
突块(112)，位于第二电极上；和
金属部分(114)，有相对于第一电极的第一表面，电连接到第一电极，还包括金属形成的安装部分(114b)，竖立在第一表面上，当带有突块的半导体元件位于第一表面上时，其沿半导体元件厚度方向(111e)的高度超过突块。
6.根据权利要求5所述的电子线路装置，其中一个金属部分有三个或更多的安装部分。
7.根据权利要求5所述的电子线路装置，进一步包括第二电路板(116)，位于另一端面的一侧上，电连接到突块和安装部分的前端(114c)，带有半导体元件的控制电路。
8.根据权利要求6所述的电子线路装置，进一步包括第二电路板(116)，位于另一端面的一侧上，电连接到突块和安装部分的前端(114c)，带有半导体元件的控制电路。
9.根据权利要求7所述的电子线路装置，进一步包括带有支撑部分(120a)的热辐射部分(120)，通过电绝缘部分(119)在其上放置金属部分，并将半导体元件传导到金属部分的热量散出。
10.根据权利要求8所述的电子线路装置，进一步包括带有支撑部分(120a)的热辐射部分(120)，通过电绝缘部分(119)在其上放置金属部分，并将半导体元件传导到金属部分的热量散出。
11.一种制造电子线路装置的方法，该电子线路装置包括：
需热辐射的半导体元件(111)，在彼此相对的一端面(111a)和另一端面(111b)分别形成第一电极(111c)和第二电极(111d)；
突块(112)，位于第二电极上；和
金属部分(114)，具有与第一电极相对的第一表面(114a)，电连接到第一电极，还包括金属制成的安装部分(114b)，竖立在第一表面上，当带有突块的半导体元件放置在第一表面上时，金属制成的安装部分(114b)沿半导体元件厚度方向(111e)的高度超过突块，
所述方法包括：
使金属部分的第一表面和第一电极彼此接触到一起，半导体元件放置在第一表面上并加热半导体元件；
在第一表面上放置熔化的焊接剂；
分别按压半导体元件和金属部分，去除第一表面和第一电极间熔化的焊接剂内部的气泡；
维持按压状态，对熔化的焊接剂降温，使熔化的焊接剂凝固并连接半导体元件和金属部分。
12.根据权利要求11所述的制造电子线路装置的方法，进一步包括：
连接半导体元件和金属部分之后，将突块和安装部分的前段(114c)电连接到第二电路板(116)，该第二电路板位于另一端面的一侧，带有半导体元件的控制电路，
其中，当第二电路板附带有多个金属部分时，调整金属部分的安装部分的高度，使所有金属部分相对于第二电路板的高度一致。
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7642640B2 (en) 2004-11-01 2010-01-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing process thereof
CN103367303A (zh) * 2013-07-04 2013-10-23 株洲南车时代电气股份有限公司 一体化门极电阻布局的大功率igbt模块
CN103456706A (zh) * 2012-06-01 2013-12-18 Nxp股份有限公司 分立半导体器件封装和制造方法
CN104979297A (zh) * 2014-04-13 2015-10-14 英飞凌科技股份有限公司 用于电子模块的基板以及制造用于电子模块的基板的方法
CN105161467A (zh) * 2015-08-14 2015-12-16 株洲南车时代电气股份有限公司 一种用于电动汽车的功率模块
CN111162015A (zh) * 2019-12-20 2020-05-15 珠海格力电器股份有限公司 一种智能功率模块及封装方法

Families Citing this family (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4479121B2 (ja) * 2001-04-25 2010-06-09 株式会社デンソー 半導体装置の製造方法
US6677669B2 (en) * 2002-01-18 2004-01-13 International Rectifier Corporation Semiconductor package including two semiconductor die disposed within a common clip
US6873043B2 (en) * 2003-03-10 2005-03-29 Delphi Technologies, Inc. Electronic assembly having electrically-isolated heat-conductive structure
DE10316355C5 (de) * 2003-04-10 2008-03-06 Semikron Elektronik Gmbh & Co. Kg Leistungshalbeitermodul mit flexibler äusserer Anschlussbelegung
DE10333841B4 (de) * 2003-07-24 2007-05-10 Infineon Technologies Ag Verfahren zur Herstellung eines Nutzens mit in Zeilen und Spalten angeordneten Halbleiterbauteilpositionen und Verfahren zur Herstellung eines Halbleiterbauteils
US7315081B2 (en) * 2003-10-24 2008-01-01 International Rectifier Corporation Semiconductor device package utilizing proud interconnect material
JP4491244B2 (ja) * 2004-01-07 2010-06-30 三菱電機株式会社 電力半導体装置
JP4589009B2 (ja) * 2004-01-09 2010-12-01 三菱電機株式会社 電力用半導体装置
DE102004025609B4 (de) * 2004-05-25 2010-12-09 Semikron Elektronik Gmbh & Co. Kg Anordnung in Schraub- Druckkontaktierung mit einem Leistungshalbleitermodul
US20070253167A1 (en) * 2004-07-26 2007-11-01 Chiang Kuo C Transparent substrate heat dissipater
US7885076B2 (en) * 2004-09-07 2011-02-08 Flextronics Ap, Llc Apparatus for and method of cooling molded electronic circuits
JP2006253183A (ja) * 2005-03-08 2006-09-21 Hitachi Ltd 半導体パワーモジュール
EP1866830B1 (en) * 2005-03-30 2008-12-24 Nxp B.V. A portable object connectable package
JP2006303006A (ja) * 2005-04-18 2006-11-02 Yaskawa Electric Corp パワーモジュール
JP4489000B2 (ja) * 2005-10-12 2010-06-23 株式会社東芝 電子タイマー及びシステムｌｓｉ
US7989981B2 (en) * 2006-02-02 2011-08-02 Flextronics Ap, Llc Power adaptor and storage unit for portable devices
US7554188B2 (en) * 2006-04-13 2009-06-30 International Rectifier Corporation Low inductance bond-wireless co-package for high power density devices, especially for IGBTs and diodes
KR101203466B1 (ko) * 2006-04-20 2012-11-21 페어차일드코리아반도체 주식회사 전력 시스템 모듈 및 그 제조 방법
US20080105963A1 (en) * 2006-07-28 2008-05-08 Tessera, Inc. Stackable electronic device assembly
US7999369B2 (en) 2006-08-29 2011-08-16 Denso Corporation Power electronic package having two substrates with multiple semiconductor chips and electronic components
DE102006040838B4 (de) * 2006-08-31 2009-11-12 DENSO CORPORATION, Kariya-shi Elektronische Leistungspackung mit zwei Substraten mit mehreren Halbleiterchips und elektronischen Komponenten
DE102007002342B3 (de) * 2007-01-16 2008-10-16 Friwo Mobile Power Gmbh Vereinfachte primärseitige Ansteuerschaltung für den Schalter in einem Schaltnetzteil
JP5285224B2 (ja) * 2007-01-31 2013-09-11 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置
US20080280463A1 (en) * 2007-05-09 2008-11-13 Mercury Computer Systems, Inc. Rugged Chip Packaging
US7973387B2 (en) * 2007-06-08 2011-07-05 Continental Automotive Systems Us, Inc. Insulated gate bipolar transistor
KR101194842B1 (ko) * 2007-09-06 2012-10-25 삼성전자주식회사 반도체 패키지가 삽입된 인쇄회로기판
EP2051360B1 (de) * 2007-10-17 2016-09-21 Power Systems Technologies GmbH Steuerschaltung für ein primär gesteuertes Schaltnetzteil mit erhöhter Genauigkeit der Spannungsregelung sowie primär gesteuertes Schaltnetzteil
JP4523632B2 (ja) * 2007-12-11 2010-08-11 三菱電機株式会社 半導体装置
US8279646B1 (en) 2007-12-14 2012-10-02 Flextronics Ap, Llc Coordinated power sequencing to limit inrush currents and ensure optimum filtering
WO2009084127A1 (ja) * 2007-12-28 2009-07-09 Onamba Co., Ltd. 端子板回路
CN101925657B (zh) * 2008-01-25 2013-06-26 富士通株式会社 热容量控制材料和部件安装方法
US7808100B2 (en) * 2008-04-21 2010-10-05 Infineon Technologies Ag Power semiconductor module with pressure element and method for fabricating a power semiconductor module with a pressure element
JP4989552B2 (ja) * 2008-05-08 2012-08-01 トヨタ自動車株式会社 電子部品
DE102008023714B4 (de) * 2008-05-15 2011-01-20 Semikron Elektronik Gmbh & Co. Kg Anordnung mit einem Hauptträger und einer Leiterplatte mit Bauelementen
US8693213B2 (en) 2008-05-21 2014-04-08 Flextronics Ap, Llc Resonant power factor correction converter
US8102678B2 (en) 2008-05-21 2012-01-24 Flextronics Ap, Llc High power factor isolated buck-type power factor correction converter
DE102008027761A1 (de) * 2008-06-11 2009-11-19 Siemens Aktiengesellschaft Elektronisches Bauteil
US8531174B2 (en) * 2008-06-12 2013-09-10 Flextronics Ap, Llc AC-DC input adapter
JP5586866B2 (ja) * 2008-09-29 2014-09-10 株式会社日立産機システム 電力変換装置
US8787044B2 (en) * 2009-05-07 2014-07-22 Flextronics Ap, Llc Energy recovery snubber circuit for power converters
US8040117B2 (en) * 2009-05-15 2011-10-18 Flextronics Ap, Llc Closed loop negative feedback system with low frequency modulated gain
TWI387090B (zh) * 2009-06-05 2013-02-21 Walton Advanced Eng Inc Reverse staggered stack structure of integrated circuit module
US8891803B2 (en) 2009-06-23 2014-11-18 Flextronics Ap, Llc Notebook power supply with integrated subwoofer
US8289741B2 (en) 2010-01-14 2012-10-16 Flextronics Ap, Llc Line switcher for power converters
US8964413B2 (en) 2010-04-22 2015-02-24 Flextronics Ap, Llc Two stage resonant converter enabling soft-switching in an isolated stage
DE102010022562A1 (de) * 2010-06-02 2011-12-08 Vincotech Holdings S.à.r.l. Elektrisches Leistungsmodul und Verfahren zum Verbinden eines elektrischen Leistungsmoduls mit einer Leiterplatte und einer Wärmesenke
US20120008269A1 (en) * 2010-07-08 2012-01-12 David Gengler Protective cover for a mobile computing device, systems including protective covers, and associated methods
US11134580B2 (en) 2010-07-08 2021-09-28 Zagg Inc Protective cover for portable electronic device and associated systems and methods
US8488340B2 (en) 2010-08-27 2013-07-16 Flextronics Ap, Llc Power converter with boost-buck-buck configuration utilizing an intermediate power regulating circuit
US8520410B2 (en) 2010-11-09 2013-08-27 Flextronics Ap, Llc Virtual parametric high side MOSFET driver
US8441810B2 (en) 2010-11-09 2013-05-14 Flextronics Ap, Llc Cascade power system architecture
KR101343140B1 (ko) * 2010-12-24 2013-12-19 삼성전기주식회사 3ｄ 파워모듈 패키지
JP5510432B2 (ja) * 2011-02-28 2014-06-04 株式会社豊田自動織機 半導体装置
US8637981B2 (en) * 2011-03-30 2014-01-28 International Rectifier Corporation Dual compartment semiconductor package with temperature sensor
US8842450B2 (en) 2011-04-12 2014-09-23 Flextronics, Ap, Llc Power converter using multiple phase-shifting quasi-resonant converters
WO2012178168A2 (en) 2011-06-23 2012-12-27 Zagg Intellectual Property Holding Co., Inc. Accessory and support for electronic devices, systems including the same and methods
EP2728616B1 (en) * 2011-06-29 2018-07-18 NGK Insulators, Ltd. Circuit board for peripheral circuit in high-capacity module and high-capacity module including peripheral circuit using circuit board
GB2505848B (en) 2011-07-12 2018-07-11 Flextronics Ap Llc Heat transfer system with integrated evaporator and condenser
FR2979177B1 (fr) * 2011-08-19 2014-05-23 Valeo Sys Controle Moteur Sas Bloc de puissance pour onduleur de vehicule electrique
TWI578453B (zh) * 2011-12-12 2017-04-11 鴻海精密工業股份有限公司 晶片封裝結構及其封裝方法
JP5665729B2 (ja) * 2011-12-27 2015-02-04 三菱電機株式会社 電力用半導体装置
JP5709739B2 (ja) * 2011-12-29 2015-04-30 三菱電機株式会社 パワー半導体装置
US20130188317A1 (en) * 2012-01-20 2013-07-25 Hsin-Yin Ho Heat sink and electronic device having the same
US9232630B1 (en) 2012-05-18 2016-01-05 Flextronics Ap, Llc Method of making an inlay PCB with embedded coin
US9276460B2 (en) 2012-05-25 2016-03-01 Flextronics Ap, Llc Power converter with noise immunity
US9203293B2 (en) 2012-06-11 2015-12-01 Power Systems Technologies Ltd. Method of suppressing electromagnetic interference emission
US9203292B2 (en) 2012-06-11 2015-12-01 Power Systems Technologies Ltd. Electromagnetic interference emission suppressor
US9366394B2 (en) 2012-06-27 2016-06-14 Flextronics Ap, Llc Automotive LED headlight cooling system
US9019726B2 (en) 2012-07-13 2015-04-28 Flextronics Ap, Llc Power converters with quasi-zero power consumption
US8743565B2 (en) 2012-07-27 2014-06-03 Flextronics Ap, Llc High power converter architecture
US9019724B2 (en) 2012-07-27 2015-04-28 Flextronics Ap, Llc High power converter architecture
US9287792B2 (en) 2012-08-13 2016-03-15 Flextronics Ap, Llc Control method to reduce switching loss on MOSFET
US9312775B2 (en) 2012-08-15 2016-04-12 Flextronics Ap, Llc Reconstruction pulse shape integrity in feedback control environment
US9136769B2 (en) 2012-10-10 2015-09-15 Flextronics Ap, Llc Load change detection for switched mode power supply with low no load power
US9092712B2 (en) 2012-11-02 2015-07-28 Flextronics Ap, Llc Embedded high frequency RFID
US9605860B2 (en) 2012-11-02 2017-03-28 Flextronics Ap, Llc Energy saving-exhaust control and auto shut off system
US9660540B2 (en) 2012-11-05 2017-05-23 Flextronics Ap, Llc Digital error signal comparator
JP5975856B2 (ja) * 2012-11-27 2016-08-23 三菱電機株式会社 電力用半導体装置
DE102012222959B4 (de) * 2012-12-12 2015-04-02 Semikron Elektronik Gmbh & Co. Kg Leistungsbauelementeinrichtung
JP5716972B2 (ja) 2013-02-05 2015-05-13 株式会社デンソー 電子部品の放熱構造およびその製造方法
DE102014102917B4 (de) 2013-03-05 2024-01-18 Flextronics Ap, Llc Bauteil mit Abzugsstrecken, Halbleiterbaugruppe mit Druckentlastungsstruktur und Verfahren zur Verhinderung von Druckaufbau in einer Halbleiterverpackung
US9494658B2 (en) 2013-03-14 2016-11-15 Flextronics Ap, Llc Approach for generation of power failure warning signal to maximize useable hold-up time with AC/DC rectifiers
US9323267B2 (en) 2013-03-14 2016-04-26 Flextronics Ap, Llc Method and implementation for eliminating random pulse during power up of digital signal controller
US9093911B2 (en) 2013-03-15 2015-07-28 Flextronics Ap, Llc Switching mode power converter using coded signal control
US9184668B2 (en) 2013-03-15 2015-11-10 Flextronics Ap, Llc Power management integrated circuit partitioning with dedicated primary side control winding
US9490651B2 (en) 2013-03-15 2016-11-08 Flextronics Ap, Llc Sweep frequency mode for magnetic resonant power transmission
US8654553B1 (en) 2013-03-15 2014-02-18 Flextronics Ap, Llc Adaptive digital control of power factor correction front end
JP6012533B2 (ja) * 2013-04-05 2016-10-25 三菱電機株式会社 電力用半導体装置
JP5999041B2 (ja) * 2013-07-23 2016-09-28 株式会社デンソー 電子装置
US9521754B1 (en) 2013-08-19 2016-12-13 Multek Technologies Limited Embedded components in a substrate
US9053405B1 (en) 2013-08-27 2015-06-09 Flextronics Ap, Llc Printed RFID circuit
US9801277B1 (en) 2013-08-27 2017-10-24 Flextronics Ap, Llc Bellows interconnect
KR102143890B1 (ko) * 2013-10-15 2020-08-12 온세미컨덕터코리아 주식회사 파워 모듈 패키지 및 이의 제조 방법
US9565748B2 (en) 2013-10-28 2017-02-07 Flextronics Ap, Llc Nano-copper solder for filling thermal vias
CN105706236B (zh) 2014-01-27 2019-03-01 三菱电机株式会社 电极端子、电力用半导体装置以及电力用半导体装置的制造方法
US9621053B1 (en) 2014-08-05 2017-04-11 Flextronics Ap, Llc Peak power control technique for primary side controller operation in continuous conduction mode
US9661738B1 (en) 2014-09-03 2017-05-23 Flextronics Ap, Llc Embedded coins for HDI or SEQ laminations
DE102015200868A1 (de) * 2015-01-20 2016-07-21 Zf Friedrichshafen Ag Steuerelektronik
US10123603B1 (en) 2015-03-27 2018-11-13 Multek Technologies Limited Diffuse fiber optic lighting for luggage
US10321560B2 (en) 2015-11-12 2019-06-11 Multek Technologies Limited Dummy core plus plating resist restrict resin process and structure
US10064292B2 (en) 2016-03-21 2018-08-28 Multek Technologies Limited Recessed cavity in printed circuit board protected by LPI
US10712398B1 (en) 2016-06-21 2020-07-14 Multek Technologies Limited Measuring complex PCB-based interconnects in a production environment
JPWO2018180580A1 (ja) * 2017-03-30 2019-04-04 三菱電機株式会社 半導体装置および電力変換装置
US10784213B2 (en) * 2018-01-26 2020-09-22 Hong Kong Applied Science and Technology Research Institute Company Limited Power device package
US10991670B2 (en) 2018-09-28 2021-04-27 Semiconductor Components Industries, Llc Semiconductor device assemblies including spacer with embedded semiconductor die
DE102019107855A1 (de) * 2019-03-27 2020-10-01 Infineon Technologies Ag Halbleitergehäuse und verfahren zur herstellung eines halbleitergehäuses
CN210246355U (zh) * 2019-08-01 2020-04-03 深圳雾芯科技有限公司 一种电力供应装置
JP6960984B2 (ja) * 2019-12-26 2021-11-05 三菱電機株式会社 電子装置及びその絶縁部材
US11562938B2 (en) * 2020-12-29 2023-01-24 Semiconductor Components Industries, Llc Spacer with pattern layout for dual side cooling power module
DE102022201016A1 (de) 2022-02-01 2023-08-03 Zf Friedrichshafen Ag Leistungsmodul für einen Stromrichter mit optimierten Signalpins

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4034468A (en) * 1976-09-03 1977-07-12 Ibm Corporation Method for making conduction-cooled circuit package
DE3303103A1 (de) 1983-01-31 1984-08-02 Siemens AG, 1000 Berlin und 8000 München Leistungs-halbleitermodul und verfahren zu seiner ansteuerung
JPH01217951A (ja) * 1988-02-26 1989-08-31 Hitachi Ltd 半導体装置
JPH02240953A (ja) 1989-03-14 1990-09-25 Sharp Corp 半導体装置
JPH0444256A (ja) * 1990-06-07 1992-02-14 Hitachi Ltd 半導体装置
CA2072377A1 (en) * 1991-07-12 1993-01-13 Masanori Nishiguchi Semiconductor chip module and method of manufacturing the same
JPH05129516A (ja) * 1991-11-01 1993-05-25 Hitachi Ltd 半導体装置
JP2656416B2 (ja) * 1991-12-16 1997-09-24 三菱電機株式会社 半導体装置および半導体装置の製造方法、並びに半導体装置に用いられる複合基板および複合基板の製造方法
JP2936855B2 (ja) * 1991-12-26 1999-08-23 富士電機株式会社 電力用半導体装置
JP2854757B2 (ja) * 1992-06-17 1999-02-03 三菱電機株式会社 半導体パワーモジュール
JP2791216B2 (ja) 1992-07-17 1998-08-27 ヴィエルティー コーポレーション 電気部品用パッケージ、電力損発生部品の取付方法、及び導体端子ピンと回路基板との接続方法
JP2956363B2 (ja) * 1992-07-24 1999-10-04 富士電機株式会社 パワー半導体装置
JPH06310564A (ja) 1993-04-20 1994-11-04 Hitachi Ltd 半導体装置
US5396403A (en) * 1993-07-06 1995-03-07 Hewlett-Packard Company Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate
US5578869A (en) * 1994-03-29 1996-11-26 Olin Corporation Components for housing an integrated circuit device
JP3022178B2 (ja) 1994-06-21 2000-03-15 日産自動車株式会社 パワーデバイスチップの実装構造
KR100245971B1 (ko) * 1995-11-30 2000-03-02 포만 제프리 엘 중합접착제를 금속에 접착시키기 위한 접착력 촉진층을 이용하는 히트싱크어셈블리 및 그 제조방법
JP3168901B2 (ja) * 1996-02-22 2001-05-21 株式会社日立製作所 パワー半導体モジュール
JP3206717B2 (ja) * 1996-04-02 2001-09-10 富士電機株式会社 電力用半導体モジュール
JPH113995A (ja) 1997-06-12 1999-01-06 Toshiba Corp 半導体装置
US6008536A (en) * 1997-06-23 1999-12-28 Lsi Logic Corporation Grid array device package including advanced heat transfer mechanisms
JP3220900B2 (ja) 1997-06-24 2001-10-22 三菱電機株式会社 パワー半導体モジュール
US6060772A (en) * 1997-06-30 2000-05-09 Kabushiki Kaisha Toshiba Power semiconductor module with a plurality of semiconductor chips
US5909057A (en) * 1997-09-23 1999-06-01 Lsi Logic Corporation Integrated heat spreader/stiffener with apertures for semiconductor package
US6133634A (en) * 1998-08-05 2000-10-17 Fairchild Semiconductor Corporation High performance flip chip package
US6586845B1 (en) * 1998-10-28 2003-07-01 Shinko Electric Industries Co., Ltd. Semiconductor device module and a part thereof
JP2000174186A (ja) * 1998-12-08 2000-06-23 Hitachi Ltd 半導体装置およびその実装方法
US6246583B1 (en) * 1999-03-04 2001-06-12 International Business Machines Corporation Method and apparatus for removing heat from a semiconductor device
JP2000261120A (ja) 1999-03-05 2000-09-22 Origin Electric Co Ltd 半導体装置の実装構造及びそれを用いた電子機器
FR2790905A1 (fr) 1999-03-09 2000-09-15 Sagem Composant electrique de puissance a montage par brasage sur un support et procede de montage correspondant
KR20010009735A (ko) * 1999-07-13 2001-02-05 김영환 실리콘 방열판 및 그 제작방법
US6472741B1 (en) * 2001-07-14 2002-10-29 Siliconware Precision Industries Co., Ltd. Thermally-enhanced stacked-die ball grid array semiconductor package and method of fabricating the same
US6573592B2 (en) * 2001-08-21 2003-06-03 Micron Technology, Inc. Semiconductor die packages with standard ball grid array footprint and method for assembling the same
KR100443399B1 (ko) * 2001-10-25 2004-08-09 삼성전자주식회사 보이드가 형성된 열 매개 물질을 갖는 반도체 패키지
KR20030045950A (ko) * 2001-12-03 2003-06-12 삼성전자주식회사 방열판을 구비한 멀티 칩 패키지
TWI255532B (en) * 2002-02-05 2006-05-21 Siliconware Precision Industries Co Ltd Flip-chip ball grid array semiconductor package with heat-dissipating device and method for fabricating the same
TWI284395B (en) * 2002-12-30 2007-07-21 Advanced Semiconductor Eng Thermal enhance MCM package

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7642640B2 (en) 2004-11-01 2010-01-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing process thereof
CN103456706A (zh) * 2012-06-01 2013-12-18 Nxp股份有限公司 分立半导体器件封装和制造方法
US9263335B2 (en) 2012-06-01 2016-02-16 Nxp B.V. Discrete semiconductor device package and manufacturing method
CN103456706B (zh) * 2012-06-01 2016-12-28 耐智亚有限公司 分立半导体器件封装和制造方法
CN103367303A (zh) * 2013-07-04 2013-10-23 株洲南车时代电气股份有限公司 一体化门极电阻布局的大功率igbt模块
CN104979297A (zh) * 2014-04-13 2015-10-14 英飞凌科技股份有限公司 用于电子模块的基板以及制造用于电子模块的基板的方法
US10109544B2 (en) 2014-04-13 2018-10-23 Infineon Technologies Ag Baseplate for an electronic module
CN104979297B (zh) * 2014-04-13 2019-03-26 英飞凌科技股份有限公司 用于电子模块的基板以及制造用于电子模块的基板的方法
CN105161467A (zh) * 2015-08-14 2015-12-16 株洲南车时代电气股份有限公司 一种用于电动汽车的功率模块
CN105161467B (zh) * 2015-08-14 2019-06-28 株洲南车时代电气股份有限公司 一种用于电动汽车的功率模块
CN111162015A (zh) * 2019-12-20 2020-05-15 珠海格力电器股份有限公司 一种智能功率模块及封装方法

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