CN1507066A - 利用保护涂层制造和封装图象传感器小片的方法 - Google Patents
利用保护涂层制造和封装图象传感器小片的方法 Download PDFInfo
- Publication number
- CN1507066A CN1507066A CNA2003101043631A CN200310104363A CN1507066A CN 1507066 A CN1507066 A CN 1507066A CN A2003101043631 A CNA2003101043631 A CN A2003101043631A CN 200310104363 A CN200310104363 A CN 200310104363A CN 1507066 A CN1507066 A CN 1507066A
- Authority
- CN
- China
- Prior art keywords
- image sensor
- small pieces
- protective layer
- sensor small
- lenticule
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 28
- 238000012856 packing Methods 0.000 title abstract description 3
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 239000011241 protective layer Substances 0.000 claims abstract description 45
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 16
- 239000010410 layer Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000007704 wet chemistry method Methods 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Abstract
公开一种提高图象传感器小片的产量和封装的方法。该方法包括首先在半导体晶片上形成多个带有微透镜的图象传感器。接着,在图象传感器小片的上面形成保护层。接着切割该晶片以便分开图象传感器小片。然后把图象传感器小片安装到集成电路插件上。最后,从图象传感器小片去掉该保护层。
Description
技术领域
本发明涉及在半导体晶片上制造图象传感器小片,更具体地说,涉及一种提高产量的图象传感器结构。
背景技术
图象传感器是可以用来产生静态或视频图象的电子集成电路。固态图象传感器可以是电荷耦合器件(CCD)型或者是互补金属氧化物半导体(CMOS)型。在这二种类型的图象传感器中,在基片上形成光采集象素并且排列成二维阵列。现代图象传感器典型地含有数百万个象素以提供高分辨率图象。图象传感器的一个重要部分是在这些象素的顶上形成的滤色器和微透镜结构。如它的名字意味地那样,滤色器会同信号处理一起操作,从而提供彩色图象。微透镜用于把入射光聚焦到象素上,从而改进每个象素的占空因数。
通常,集成电路(IC)图象传感器的制造过程和绝大多数IC的制造过程相同。相对大的半导体晶片(例如直径300毫米)经过沉积、蚀刻、掩蔽、清洗以及其它工序,以便在晶片上形成各种器件。此外,在单个晶片上成数百个(即使不是数千个)分立的IC小片是常见的。当完全形成IC小片时,沿着晶片中形成的分割线切开(称为切割)晶片,以便使每个IC小片彼此分开。在分开每个IC小片后,接着利用小片焊接工艺把IC小片安装到一个插件上。
不变地切割小片的工序会导致产生一定数量的颗粒物,它们不会合乎要求地沿积在IC小片的微透镜表面上。尽管典型地执行清洗步骤(利用喷射)以便去掉颗粒物,但这仍不足以去掉所有的颗粒物。这造成产量的降低。
另外,由于微透镜表面通常是暴露的,故采用一种特殊的处理手段以防止损害图象传感器。这种特殊处理手段典型地涉及只处理为侧面的IC小片并且不处理微透镜表面。这进而使IC小片和IC插件之间的小片焊接工艺更加复杂。
附图说明
图1是现有技术图象传感器的一部分的剖面图。
图2是现有技术图象传感器的顶视图,其中示出象素排列在二维阵列中并且带有在其上形成的微透镜。
图3是现有技术半导体基片的剖视图,以示出在基片上形成的图象传感器。
图4是依据本发明的一种实施例的半导体基片的剖视图。
图5是半导体晶片的剖视图,其示出依据本发明的一种实施例在该晶片上形成的多个图象传感器小片。
图6示意说明把图象传感器小片焊接到IC插件上。
图7是流程图,其示出本发明的一种实施例的方法。
具体实施方式
本发明涉及一种提高半导体晶片的产量的图象传感器结构和方法。在下面的说明中,提供一些具体细节以便彻底地理解本发明的各实施例。但是,业内人士会理解,可以在不利用这些具体细节的一个或多个或者在利用其它方法、组件等的情况下实践本发明。在其它实例中,不详细地示出或说明公知的结构或操作,以避免使本发明的各种实施例的各个方面模糊不清。
短语“一种实施例”或“一实施例”在本说明书中的引用意味着连同该实施例一起说明的某具体特性、结构或特征包含在本发明的至少一种实施例中。从而,本说明书中各处出现的短语“在一种实施例中”或“在一实施例中”不必全都参照同一个实施例。另外,这些具体的特性、结构或特征可以在一种或多种实施例中以任何适当的方式组合。
图1示出现有技术的其上形成微透镜的图象传感器101的简化剖视图。如从图1看出的,该图象传感器包括多个带有在基片中形成的光检测元件103的象素。光检测元件103可以是数种类型中的一种,例如光电二极管、光电门或者其它固态光敏元件。
每个象素的顶上形成一个微透镜105。微透镜105把入射光聚焦到光检测元件103上。通常通过把一层微透镜材料旋涂到一个平面化的层上形成微透镜。接着蚀刻该微透镜材料以形成其中心在每个象素上方的圆柱形或其它形状的区段。接着加热并回流该微透镜材料以形成凸起的半球形微透镜。
此外,在用参考数字107表示的光检测元件103和微透镜之间的区域里,存在着各种典型地应包括滤色器109以及各种金属导线的中间层。可以理解,图1的结构只是图象传感器结构的一种例子,并且本发明可适应若干变型。例如,如在我们的共同待决的申请中公开那样,微透镜可以是凹下的。备选地,可以在微透镜105的顶上形成滤色器109。
图2示出图象传感器201的顶视图。图象传感器201包括多个典型地排列在二维阵列中的象素203。在图2中示出的例子里,该图象传感器显示三乘三的象素阵列,但是可理解,实际的图象传感器201会具有多得多的可能排列在数千行和/或数千列中的象素。另外,尽管图2示出象素位于有序的列和行中。但象素也可以排列在任何类型的有序结构中。例如,交错的行可以按棋盘格式使它们的象素横向上彼此轻微偏移。
象素203典型地包括一个光敏元件,例如作为二种例子的光电二极管和光电门。但是可理解,可以使用其它类型的已知的或者以后开发出的光敏元件。另外,象素203还可包括放大和/或读出电路。为了简明,未在图2中示出这些电路。在一种实施例中,象素203可以是技术上周知的活动象素。在每个象素203的顶上形成一个微透镜205。
此外,每个象素203和一个滤色器207相关联。滤色器207可以或者放在微透镜205和光敏元件之间,或者替代地在微透镜205的顶上形成。滤色器207典型地是只让窄带的光,例如红、兰或绿,通过的加色或染色材料。在其它实施例中,滤色器可以是青色、黄色或品红色。但是,这些只是滤色器207的示例颜色,并且本发明意欲包括具有任何颜色的滤色器207。
此外,尽管采用加色或染色的彩色材料是滤色器的最流行形式,也可以采用其它反射型滤色器,例如多层的叠层反射材料。滤色器207的形成在技术上是周知的,并且本文不加以说明以避免对本发明的说明造成不必要的模糊不清。例如,美国6,297,071号专利、美国6,362,513号专利以及美国6,271,900号专利示出滤色器技术的现有状态。图2的顶视图中未示出包含在图象传感器201中的红外滤光器。
图3是沿图2的A-A线取的剖视图。如图所示,半导体基片301具有多个在其中形成的光敏元件303(和图2的象素203关联)。图3示出光敏元件303为光电二极管,尽管也可以采用其它替代物或等同物。形成光电二极管以及其它关联电路的细节在现有技术中是周知的,并且本文中不予重复以避免使本发明模糊不清。不过,可在美国5,904,493号专利和美国6,320,617号专利中看到现有技术的例子。
依据一种实施例,在基片中形成各象素203之后,在基片301的上面形成透光(至少对可见光谱中的一部分透光)的基底材料(basematerial)305。可以利用表面层沉积工艺形成基材料305,并且该基底材料可以是各种形式的二氧化硅,例如热氧化物、化学汽相沉积(CVD)氧化物或者旋涂的玻璃。也可以把基底材料305看成是中间层介质。
下一步,在基材料305的上面形成滤色器311。滤色器311是利用常规工艺成的。在图3中示出的实施例中,滤色器311是红、绿和兰配色的,但是也可以是青、黄和品红色。最后,在滤色器311的上面形成微透镜313。类似地,可以利用常规工艺形成微透镜,并且可以是凸形的(如图3中所示)或者为其它形状。
接着,转到图4,在微透镜313的上方沉积牺牲保护层401。在一种实施例中,保护层401位于微透镜313的上面,但是在其它实施例中该保护层401应该简单地在是刚要切割晶片之前沉积的最顶层。在某些图象传感器中,微透镜313不是最顶层,而是可能包括其它层,例如滤色层或钝化层。
在一种实施例中,保护层401是在整个晶片上表面层沉积的或者其它方式形成的苯基树酯(phenyl resin),覆盖多个图象传感器小片。保护层401的厚度不是关键性的;但是,保护层401应足够厚以便充分保护下面的微透镜313并且耐受得住随后的处理。在一种实施例中,保护层401为1-3微米厚。
依据本发明的一种实施例,把保护层401旋涂到最顶层上。在一种实施例中,保护层401为聚甲基丙烯酸缩水甘油酯(PGMA)或聚甲基丙烯酸甲酯(PMMA)。当然,可用其它类型的材料替代,但是最好是可被旋涂上并且随后可固化成固体的材料。
在一种实施例中,光致抗蚀型树脂材料是有益的,因为它们可以通过暴光和显影直接构成图案。非光致抗蚀型材料尽管仍是可行的但会要求附加的蚀刻工艺。具体地,如图5中看出那样,保护层401构形成只使该保护层401覆盖因图象传感器小片501的某些部分上。在感光型材料的情况下,可以通过使保护层401对来自例如步进机(stepper)的暴光辐射暴光来实现保护层401的构形。接着,可以使保护层401显影以形成图5中示出的图案。在非感光型材料的情况下,保护层401的构形可能需要采用各种掩蔽及蚀刻技术。
图5是带有在其上形成的多个图象传感器小片的硅晶片的一部分的剖视图。如图所示,分割线503把各个图象传感器小片501彼此分隔开。通常在图象传感器小片501的周边上形成接触垫片505(也称为接触耳(bump))。
注意,该实施例中保护层501通常只覆盖象素阵列区,尽管它也可能覆盖图象传感器小片501其它需要保护的部分。在一种实施例中,保护层401不延伸到接触垫片505上,以便允许和IC插件电连接,例如通过焊接线结构。
在其它实施例中,保护层401完整地延伸到接触垫片505的上面。在这种情况下,在施加焊接线之前去掉保护层401。可以在图5中看到这种作为图象传感器小片501C的实施例。
如进一步在图5中看出那样,在切割图象传感器小片501后,各种颗粒物可能沉积在保护层401上。由于保护层401,这些颗粒物不落在图象传感器的微透镜上。
转到图6,在把图象传感器小片切割成各个小片后,接着把图象传感器小片501安装到IC插件601上。IC插件601也称为引线框架。IC插件601具有多个引脚(在一种典型实施例中为24、28或48个引脚)。通过焊接线605各引脚603电气上和图象传感器小片501的接触垫片505连接。存在着各种各样的把图象传感器小片501封装到插件上的方法和技术,本发明可应用它们中的任何一种。通常,把小片501安装到插件上的过程是一个需要操作小片501以及其它工序的灵敏过程。这可能进一步造成颗粒物的生成。保护膜401再次使微透镜免遭颗粒物损害及干扰。
在把图象传感器小片501安装到插件上后,通过任何手段去掉保护层401。例如,在苯基树脂情况下,可以利用湿式化学工艺去掉保护层401。替代地,可以采用各种类型的蚀刻。在一种实施例中,去除保护层应适合于对构成保护层401的材料的去除,从而很少或者不损害IC插件601、焊接线605以及其它组件。已知各种实现该去除的技术,包括但不限于湿式化学工艺。
另外,注意在保护层401不延伸到接触垫片505的情况下,在连接上焊接线605之后进行保护层401的去除。而在保护层401延伸到接触垫片505上方的情况下,在连接焊接线605之前进行保护层401的去除。
图7示出一个流程图,其显示本发明的方法。首先,在框701,形成图象传感器小片501(包括形成滤色器和微透镜)。接着,在框703,在晶片上沉积保护层401(例如树脂)并且构形成覆盖图象传感器小片501。如上面指出那样,该保护层可延伸或不延伸到接触垫片505的上方。
在框705,切割该晶片以分开各个图象传感器小片501。一旦完成此步后,接着在框707把图象传感器小片501安装在IC组件601上。如果保护层401不延伸到接触垫圈505的上面,此刻还在接触垫片505和插件引脚之间连接焊接线结构。
在框709,去掉保护层401,例如通过湿式剥模。还使用常规技术清洗图象传感器小片501。在保护层401延伸到接触垫片505的上方的情况下,此刻还在接触垫片505和插件引脚之间连接焊接线结构。
以这种方式,可以看出保护层401是用来使图象传感器小片501在切割和安装工艺期间免受颗粒物等的损害的临时层。作为推论,由于采用该保护层,不必那样小心地处理图象传感器小片501,从而使封装过程更加牢靠。并且误差裕量更大。
从上述说明中应理解,出于说明的目的本文描述的各特定实施例,但是在不背离本发明的精神和范围下可做出各种修改。从而,本发明只受附后权利要求书的限制。
Claims (7)
1.一种方法,包括:
在半导体晶片上形成多个具有微透镜的图象传感器小片;
在所述图象传感器小片上形成保护层;
切割所述晶片以使所述多个图象传感器小片分开;
把所述图象传感器小片安装到集成电路插件上;以及
从所述图象传感器小片去掉所述保护层。
2.如权利要求1的方法,其中所述保护层是苯基树脂。
3.如权利要求1的方法,还包括在所述微透镜的下面形成滤色层。
4.如权利要求1的方法,其中所述图象传感器小片具有接触垫片,并且其中所述保护层不延伸到所述接触垫片的上方。
5.如权利要求1的方法,其中所述图象传感器小片具有接触垫片,并且其中所述保护层延伸到所述接触垫片的上方。
6.如权利要求1的方法,还包括在去掉所述保护层之后电气地连接所述图象传感器小片和所述集成电路插件。
7.如权利要求1的方法,还包括在去掉所述保护层之前电气地连接所述图象传感器小片和所述集成电路插件。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/280,974 | 2002-10-25 | ||
US10/280,974 US6808960B2 (en) | 2002-10-25 | 2002-10-25 | Method for making and packaging image sensor die using protective coating |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1507066A true CN1507066A (zh) | 2004-06-23 |
CN100376032C CN100376032C (zh) | 2008-03-19 |
Family
ID=32069397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101043631A Expired - Lifetime CN100376032C (zh) | 2002-10-25 | 2003-10-24 | 利用保护涂层制造和封装图象传感器小片的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6808960B2 (zh) |
EP (1) | EP1414077A3 (zh) |
CN (1) | CN100376032C (zh) |
TW (1) | TWI265601B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7719072B2 (en) | 2004-12-30 | 2010-05-18 | Dongbu Electronics Co., Ltd. | Image sensor and method for fabricating the same |
CN110117445A (zh) * | 2018-02-05 | 2019-08-13 | 三星电子株式会社 | 保护膜组合物及使用保护膜组合物制造半导体封装的方法 |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6818962B2 (en) * | 2002-10-25 | 2004-11-16 | Omnivision International Holding Ltd | Image sensor having integrated thin film infrared filter |
US7001795B2 (en) * | 2003-02-27 | 2006-02-21 | Micron Technology, Inc. | Total internal reflection (TIR) CMOS imager |
US6934065B2 (en) | 2003-09-18 | 2005-08-23 | Micron Technology, Inc. | Microelectronic devices and methods for packaging microelectronic devices |
KR100529672B1 (ko) * | 2003-10-02 | 2005-11-17 | 동부아남반도체 주식회사 | 이미지 센서의 백 그라인딩 방법 |
US7583862B2 (en) * | 2003-11-26 | 2009-09-01 | Aptina Imaging Corporation | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US7091058B2 (en) * | 2003-12-11 | 2006-08-15 | Omnivision Technologies, Inc. | Sacrificial protective layer for image sensors and method of using |
US7253397B2 (en) * | 2004-02-23 | 2007-08-07 | Micron Technology, Inc. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US20050211665A1 (en) * | 2004-03-26 | 2005-09-29 | Sharp Laboratories Of America, Inc. | Methods of forming a microlens array |
US7061106B2 (en) * | 2004-04-28 | 2006-06-13 | Advanced Chip Engineering Technology Inc. | Structure of image sensor module and a method for manufacturing of wafer level package |
US8092734B2 (en) * | 2004-05-13 | 2012-01-10 | Aptina Imaging Corporation | Covers for microelectronic imagers and methods for wafer-level packaging of microelectronics imagers |
US7253957B2 (en) * | 2004-05-13 | 2007-08-07 | Micron Technology, Inc. | Integrated optics units and methods of manufacturing integrated optics units for use with microelectronic imagers |
US20050275750A1 (en) * | 2004-06-09 | 2005-12-15 | Salman Akram | Wafer-level packaged microelectronic imagers and processes for wafer-level packaging |
US7498647B2 (en) * | 2004-06-10 | 2009-03-03 | Micron Technology, Inc. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US20050274871A1 (en) | 2004-06-10 | 2005-12-15 | Jin Li | Method and apparatus for collecting photons in a solid state imaging sensor |
US7199439B2 (en) * | 2004-06-14 | 2007-04-03 | Micron Technology, Inc. | Microelectronic imagers and methods of packaging microelectronic imagers |
US7262405B2 (en) * | 2004-06-14 | 2007-08-28 | Micron Technology, Inc. | Prefabricated housings for microelectronic imagers |
US7232754B2 (en) * | 2004-06-29 | 2007-06-19 | Micron Technology, Inc. | Microelectronic devices and methods for forming interconnects in microelectronic devices |
US7294897B2 (en) * | 2004-06-29 | 2007-11-13 | Micron Technology, Inc. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US7416913B2 (en) * | 2004-07-16 | 2008-08-26 | Micron Technology, Inc. | Methods of manufacturing microelectronic imaging units with discrete standoffs |
US7189954B2 (en) * | 2004-07-19 | 2007-03-13 | Micron Technology, Inc. | Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers |
US7402453B2 (en) * | 2004-07-28 | 2008-07-22 | Micron Technology, Inc. | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US20060023107A1 (en) * | 2004-08-02 | 2006-02-02 | Bolken Todd O | Microelectronic imagers with optics supports having threadless interfaces and methods for manufacturing such microelectronic imagers |
US7364934B2 (en) * | 2004-08-10 | 2008-04-29 | Micron Technology, Inc. | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US7223626B2 (en) * | 2004-08-19 | 2007-05-29 | Micron Technology, Inc. | Spacers for packaged microelectronic imagers and methods of making and using spacers for wafer-level packaging of imagers |
US7397066B2 (en) * | 2004-08-19 | 2008-07-08 | Micron Technology, Inc. | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers |
US7115961B2 (en) * | 2004-08-24 | 2006-10-03 | Micron Technology, Inc. | Packaged microelectronic imaging devices and methods of packaging microelectronic imaging devices |
US7429494B2 (en) * | 2004-08-24 | 2008-09-30 | Micron Technology, Inc. | Microelectronic imagers with optical devices having integral reference features and methods for manufacturing such microelectronic imagers |
US7276393B2 (en) * | 2004-08-26 | 2007-10-02 | Micron Technology, Inc. | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US7511262B2 (en) * | 2004-08-30 | 2009-03-31 | Micron Technology, Inc. | Optical device and assembly for use with imaging dies, and wafer-label imager assembly |
US20070148807A1 (en) * | 2005-08-22 | 2007-06-28 | Salman Akram | Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers |
US7646075B2 (en) * | 2004-08-31 | 2010-01-12 | Micron Technology, Inc. | Microelectronic imagers having front side contacts |
US7300857B2 (en) * | 2004-09-02 | 2007-11-27 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
KR100577430B1 (ko) | 2004-09-03 | 2006-05-08 | 삼성전자주식회사 | 디스플레이 장치 |
US7186587B2 (en) * | 2004-09-20 | 2007-03-06 | Advanced Semiconductor Engineering | Singulation method used in image sensor packaging process and support for use therein |
TWI251931B (en) * | 2004-12-29 | 2006-03-21 | Advanced Chip Eng Tech Inc | Imagine sensor with a protection layer |
US7271482B2 (en) * | 2004-12-30 | 2007-09-18 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
US7214919B2 (en) * | 2005-02-08 | 2007-05-08 | Micron Technology, Inc. | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US20060177999A1 (en) * | 2005-02-10 | 2006-08-10 | Micron Technology, Inc. | Microelectronic workpieces and methods for forming interconnects in microelectronic workpieces |
US7303931B2 (en) * | 2005-02-10 | 2007-12-04 | Micron Technology, Inc. | Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces |
US7190039B2 (en) * | 2005-02-18 | 2007-03-13 | Micron Technology, Inc. | Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers |
US7795134B2 (en) | 2005-06-28 | 2010-09-14 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
US20060290001A1 (en) * | 2005-06-28 | 2006-12-28 | Micron Technology, Inc. | Interconnect vias and associated methods of formation |
US7288757B2 (en) * | 2005-09-01 | 2007-10-30 | Micron Technology, Inc. | Microelectronic imaging devices and associated methods for attaching transmissive elements |
US7262134B2 (en) * | 2005-09-01 | 2007-08-28 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
KR100769126B1 (ko) * | 2005-12-29 | 2007-10-22 | 동부일렉트로닉스 주식회사 | Cmos 이미지 센서의 제조방법 |
US7968923B2 (en) * | 2008-03-12 | 2011-06-28 | Omnivision Technologies, Inc. | Image sensor array with conformal color filters |
US7915717B2 (en) * | 2008-08-18 | 2011-03-29 | Eastman Kodak Company | Plastic image sensor packaging for image sensors |
KR101013552B1 (ko) * | 2008-09-10 | 2011-02-14 | 주식회사 하이닉스반도체 | 이미지 센서 모듈 및 이의 제조 방법 |
US8610815B2 (en) * | 2009-01-12 | 2013-12-17 | Aptina Imaging Corporation | Imaging device having microlens array adhered to wafer-level lens |
US20100194465A1 (en) * | 2009-02-02 | 2010-08-05 | Ali Salih | Temperature compensated current source and method therefor |
US10186458B2 (en) * | 2012-07-05 | 2019-01-22 | Infineon Technologies Ag | Component and method of manufacturing a component using an ultrathin carrier |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100357178B1 (ko) * | 1999-05-14 | 2002-10-18 | 주식회사 하이닉스반도체 | 고체 촬상 소자 및 그의 제조 방법 |
US5605783A (en) * | 1995-01-06 | 1997-02-25 | Eastman Kodak Company | Pattern transfer techniques for fabrication of lenslet arrays for solid state imagers |
JP3438369B2 (ja) * | 1995-01-17 | 2003-08-18 | ソニー株式会社 | 部材の製造方法 |
US6225191B1 (en) * | 1996-04-12 | 2001-05-01 | Lucent Technologies Inc. | Process for the manufacture of optical integrated circuits |
TW370727B (en) | 1998-06-04 | 1999-09-21 | United Microelectronics Corp | Method for removing color filter films of CMOS sensor |
US6297071B1 (en) | 1998-07-22 | 2001-10-02 | Eastman Kodak Company | Method of making planar image sensor color filter arrays |
JP4953494B2 (ja) * | 1998-12-09 | 2012-06-13 | 株式会社日本触媒 | 透明性耐熱樹脂成形材料、その製造方法とその用途 |
US6362513B2 (en) | 1999-07-08 | 2002-03-26 | Intel Corporation | Conformal color filter layer above microlens structures in an image sensor die |
US6171885B1 (en) | 1999-10-12 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | High efficiency color filter process for semiconductor array imaging devices |
EP1284014A4 (en) * | 2000-04-20 | 2006-09-13 | Digirad Corp | TECHNIQUE FOR SUPPRESSING THE DRIVING CURRENT IN SEMICONDUCTOR DEVICES |
US20020158296A1 (en) * | 2001-04-27 | 2002-10-31 | Samsung Electro-Mechanics Co., Ltd | Solid imaging device and method of fabricating the same |
US6482669B1 (en) * | 2001-05-30 | 2002-11-19 | Taiwan Semiconductor Manufacturing Company | Colors only process to reduce package yield loss |
US6638837B1 (en) * | 2002-09-20 | 2003-10-28 | Taiwan Semiconductor Manufacturing Company | Method for protecting the front side of semiconductor wafers |
-
2002
- 2002-10-25 US US10/280,974 patent/US6808960B2/en not_active Expired - Lifetime
-
2003
- 2003-10-09 TW TW092128201A patent/TWI265601B/zh not_active IP Right Cessation
- 2003-10-23 EP EP03256718A patent/EP1414077A3/en not_active Withdrawn
- 2003-10-24 CN CNB2003101043631A patent/CN100376032C/zh not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7719072B2 (en) | 2004-12-30 | 2010-05-18 | Dongbu Electronics Co., Ltd. | Image sensor and method for fabricating the same |
CN110117445A (zh) * | 2018-02-05 | 2019-08-13 | 三星电子株式会社 | 保护膜组合物及使用保护膜组合物制造半导体封装的方法 |
US11309345B2 (en) | 2018-02-05 | 2022-04-19 | Samsung Electronics Co., Ltd. | Protective film composition and method of manufacturing semiconductor package by using the same |
Also Published As
Publication number | Publication date |
---|---|
US6808960B2 (en) | 2004-10-26 |
TW200514201A (en) | 2005-04-16 |
US20040082094A1 (en) | 2004-04-29 |
CN100376032C (zh) | 2008-03-19 |
TWI265601B (en) | 2006-11-01 |
EP1414077A2 (en) | 2004-04-28 |
EP1414077A3 (en) | 2005-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100376032C (zh) | 利用保护涂层制造和封装图象传感器小片的方法 | |
US6577342B1 (en) | Image sensor with microlens material structure | |
KR100869219B1 (ko) | 이미지 센서 및 그 제조방법 | |
KR100664790B1 (ko) | 이미지 센서의 제조 방법 | |
US6861280B2 (en) | Image sensor having micro-lenses with integrated color filter and method of making | |
CN1501507A (zh) | 具有在外围区域的大微透镜的图像传感器 | |
JP2005277409A (ja) | イメージセンサ及びその製造方法 | |
CN1819221A (zh) | Cmos图像传感器及其制造方法 | |
CN109037251B (zh) | 固态成像装置及其制造方法 | |
KR20060136104A (ko) | 이미지 센서의 제조 방법 | |
KR100870820B1 (ko) | 이미지 센서 및 그의 제조방법 | |
US20090146237A1 (en) | Image sensor and method for manufacturing thereof | |
US7129108B2 (en) | CMOS image sensor and manufacturing method thereof | |
US20110212567A1 (en) | Method of fabricating image sensor and reworking method thereof | |
KR100672714B1 (ko) | 씨모스 이미지 센서의 제조 방법 | |
US7879640B2 (en) | CMOS image sensor and method for fabricating the same | |
US7180049B2 (en) | Image sensor with optical guard rings and method for forming the same | |
US7091058B2 (en) | Sacrificial protective layer for image sensors and method of using | |
CN100405606C (zh) | 具有减小应力的滤色层的图像传感器及其制造方法 | |
US20040082096A1 (en) | Method for forming an image sensor having concave-shaped micro-lenses | |
KR100843967B1 (ko) | 이미지 센서의 제조방법 | |
KR100749365B1 (ko) | 이미지 센서 및 그 제조방법 | |
US6699729B1 (en) | Method of forming planar color filters in an image sensor | |
KR100718779B1 (ko) | 이미지 센서 및 그 제조방법 | |
CN1503370A (zh) | 具有凹状微透镜的图象传感器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: OMNIVISION SEMICONDUCTOR (SHANGHAI) CO., LTD. Free format text: FORMER NAME: HUAUSEI SEMICONDUCTOR (SHANGHAI) CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: 000000 Shanghai, China Patentee after: OMNIVISION SEMICONDUCTOR (SHANGHAI) CO.,LTD. Address before: 000000 Shanghai, China Patentee before: OmniVision International Holding Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20080319 |